WO2011027772A1 - 半導体表面用処理剤組成物及びそれを用いた半導体表面の処理方法 - Google Patents
半導体表面用処理剤組成物及びそれを用いた半導体表面の処理方法 Download PDFInfo
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- WO2011027772A1 WO2011027772A1 PCT/JP2010/064904 JP2010064904W WO2011027772A1 WO 2011027772 A1 WO2011027772 A1 WO 2011027772A1 JP 2010064904 W JP2010064904 W JP 2010064904W WO 2011027772 A1 WO2011027772 A1 WO 2011027772A1
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- WIPO (PCT)
- Prior art keywords
- acid
- ammonium
- hydroxylamine
- group
- semiconductor surface
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 186
- 239000004065 semiconductor Substances 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 63
- -1 fluorine ions Chemical class 0.000 claims abstract description 323
- 150000001723 carbon free-radicals Chemical class 0.000 claims abstract description 120
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 73
- 150000001875 compounds Chemical class 0.000 claims abstract description 73
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000003960 organic solvent Substances 0.000 claims abstract description 38
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 28
- 239000011737 fluorine Substances 0.000 claims abstract description 28
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 18
- 150000002443 hydroxylamines Chemical class 0.000 claims abstract description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 8
- 125000006165 cyclic alkyl group Chemical group 0.000 claims abstract description 7
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 74
- 239000002253 acid Substances 0.000 claims description 58
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 50
- 229910052700 potassium Inorganic materials 0.000 claims description 50
- 239000011591 potassium Substances 0.000 claims description 50
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 46
- 229910052708 sodium Inorganic materials 0.000 claims description 40
- 239000011734 sodium Substances 0.000 claims description 40
- 150000003839 salts Chemical group 0.000 claims description 38
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 36
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 29
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 24
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- 239000012756 surface treatment agent Substances 0.000 claims description 17
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 16
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 12
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 11
- 235000015165 citric acid Nutrition 0.000 claims description 8
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 7
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 7
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 7
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 7
- 239000001630 malic acid Substances 0.000 claims description 7
- 235000011090 malic acid Nutrition 0.000 claims description 7
- 235000006408 oxalic acid Nutrition 0.000 claims description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical group S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011975 tartaric acid Substances 0.000 claims description 6
- 235000002906 tartaric acid Nutrition 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- WYTQVQPFRZZAIE-UHFFFAOYSA-N 2-[2,2-dihydroxyethyl(hydroxy)amino]ethane-1,1-diol Chemical compound OC(O)CN(O)CC(O)O WYTQVQPFRZZAIE-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 5
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 5
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- VRVKOZSIJXBAJG-TYYBGVCCSA-M monosodium fumarate Chemical compound [Na+].OC(=O)\C=C\C([O-])=O VRVKOZSIJXBAJG-TYYBGVCCSA-M 0.000 claims description 3
- KZQSXALQTHVPDQ-UHFFFAOYSA-M sodium;butanedioate;hydron Chemical compound [Na+].OC(=O)CCC([O-])=O KZQSXALQTHVPDQ-UHFFFAOYSA-M 0.000 claims description 3
- 150000003462 sulfoxides Chemical class 0.000 claims description 3
- GHQFLMULNSGOAR-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;sodium Chemical compound [Na].OC(=O)C(O)C(O)C(O)=O GHQFLMULNSGOAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000001715 Ammonium malate Substances 0.000 claims description 2
- KGECWXXIGSTYSQ-UHFFFAOYSA-N ammonium malate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)CC([O-])=O KGECWXXIGSTYSQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000019292 ammonium malate Nutrition 0.000 claims description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 2
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 claims description 2
- GOMCKELMLXHYHH-UHFFFAOYSA-L dipotassium;phthalate Chemical compound [K+].[K+].[O-]C(=O)C1=CC=CC=C1C([O-])=O GOMCKELMLXHYHH-UHFFFAOYSA-L 0.000 claims description 2
- WPUMTJGUQUYPIV-JIZZDEOASA-L disodium (S)-malate Chemical compound [Na+].[Na+].[O-]C(=O)[C@@H](O)CC([O-])=O WPUMTJGUQUYPIV-JIZZDEOASA-L 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 239000001415 potassium malate Substances 0.000 claims description 2
- SVICABYXKQIXBM-UHFFFAOYSA-L potassium malate Chemical compound [K+].[K+].[O-]C(=O)C(O)CC([O-])=O SVICABYXKQIXBM-UHFFFAOYSA-L 0.000 claims description 2
- 235000011033 potassium malate Nutrition 0.000 claims description 2
- 235000019265 sodium DL-malate Nutrition 0.000 claims description 2
- 239000001394 sodium malate Substances 0.000 claims description 2
- 229960003975 potassium Drugs 0.000 claims 11
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims 4
- 239000001508 potassium citrate Substances 0.000 claims 3
- 229960002635 potassium citrate Drugs 0.000 claims 3
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims 3
- 235000011082 potassium citrates Nutrition 0.000 claims 3
- IPGOVDXOBDFUBM-UHFFFAOYSA-N oxalic acid;sodium Chemical compound [Na].OC(=O)C(O)=O IPGOVDXOBDFUBM-UHFFFAOYSA-N 0.000 claims 2
- 239000001509 sodium citrate Substances 0.000 claims 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims 2
- BPHVHMBNGQRCNN-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;potassium Chemical compound [K].OC(=O)C(O)C(O)C(O)=O BPHVHMBNGQRCNN-UHFFFAOYSA-N 0.000 claims 1
- NLVWBYNKMPGKRG-ODZAUARKSA-N azane;(z)-but-2-enedioic acid Chemical compound N.OC(=O)\C=C/C(O)=O NLVWBYNKMPGKRG-ODZAUARKSA-N 0.000 claims 1
- CHCFOMQHQIQBLZ-UHFFFAOYSA-N azane;phthalic acid Chemical compound N.N.OC(=O)C1=CC=CC=C1C(O)=O CHCFOMQHQIQBLZ-UHFFFAOYSA-N 0.000 claims 1
- HQWKKEIVHQXCPI-UHFFFAOYSA-L disodium;phthalate Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C([O-])=O HQWKKEIVHQXCPI-UHFFFAOYSA-L 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 272
- 238000010438 heat treatment Methods 0.000 description 30
- 238000007654 immersion Methods 0.000 description 27
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 21
- 238000011156 evaluation Methods 0.000 description 21
- 239000003638 chemical reducing agent Substances 0.000 description 19
- 230000002411 adverse Effects 0.000 description 17
- 238000007598 dipping method Methods 0.000 description 16
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 16
- 150000003863 ammonium salts Chemical class 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
- 229910052783 alkali metal Inorganic materials 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000003756 stirring Methods 0.000 description 13
- 150000005215 alkyl ethers Chemical class 0.000 description 12
- 159000000000 sodium salts Chemical class 0.000 description 12
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 11
- 238000004381 surface treatment Methods 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000003945 anionic surfactant Substances 0.000 description 10
- 235000010323 ascorbic acid Nutrition 0.000 description 10
- 239000011668 ascorbic acid Substances 0.000 description 10
- 238000004380 ashing Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- SFLRURCEBYIKSS-UHFFFAOYSA-N n-butyl-2-[[1-(butylamino)-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound CCCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCCC SFLRURCEBYIKSS-UHFFFAOYSA-N 0.000 description 10
- 150000004996 alkyl benzenes Chemical class 0.000 description 9
- 230000001678 irradiating effect Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229960005070 ascorbic acid Drugs 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000003254 radicals Chemical class 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 150000003973 alkyl amines Chemical group 0.000 description 7
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 6
- 108010077895 Sarcosine Proteins 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 6
- 239000012965 benzophenone Substances 0.000 description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 6
- 235000010350 erythorbic acid Nutrition 0.000 description 6
- 229940026239 isoascorbic acid Drugs 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 150000007522 mineralic acids Chemical class 0.000 description 6
- 230000001603 reducing effect Effects 0.000 description 6
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 5
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N Lactic Acid Natural products CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 5
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N N-methylaminoacetic acid Natural products C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 5
- 235000010233 benzoic acid Nutrition 0.000 description 5
- 229960004365 benzoic acid Drugs 0.000 description 5
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- SYWIXHZXHQDFOO-UHFFFAOYSA-N methyl n-phenyliminocarbamate Chemical compound COC(=O)N=NC1=CC=CC=C1 SYWIXHZXHQDFOO-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 229940043230 sarcosine Drugs 0.000 description 5
- PPASLZSBLFJQEF-RKJRWTFHSA-M sodium ascorbate Substances [Na+].OC[C@@H](O)[C@H]1OC(=O)C(O)=C1[O-] PPASLZSBLFJQEF-RKJRWTFHSA-M 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 150000000996 L-ascorbic acids Chemical class 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 229960003237 betaine Drugs 0.000 description 4
- LWMFAFLIWMPZSX-UHFFFAOYSA-N bis[2-(4,5-dihydro-1h-imidazol-2-yl)propan-2-yl]diazene Chemical compound N=1CCNC=1C(C)(C)N=NC(C)(C)C1=NCCN1 LWMFAFLIWMPZSX-UHFFFAOYSA-N 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 4
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 3
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 3
- PFHOSZAOXCYAGJ-UHFFFAOYSA-N 2-[(2-cyano-4-methoxy-4-methylpentan-2-yl)diazenyl]-4-methoxy-2,4-dimethylpentanenitrile Chemical compound COC(C)(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)(C)OC PFHOSZAOXCYAGJ-UHFFFAOYSA-N 0.000 description 3
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 3
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 3
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- SFVFIFLLYFPGHH-UHFFFAOYSA-M stearalkonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 SFVFIFLLYFPGHH-UHFFFAOYSA-M 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
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- PIFYSWIJWKZPAT-UHFFFAOYSA-N tricyclohexylazanium;fluoride Chemical compound [F-].C1CCCCC1[NH+](C1CCCCC1)C1CCCCC1 PIFYSWIJWKZPAT-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-O triethanolammonium Chemical compound OCC[NH+](CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-O 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- GRSOSRPRKCYTMG-UHFFFAOYSA-N tripropylazanium;fluoride Chemical compound [F-].CCC[NH+](CCC)CCC GRSOSRPRKCYTMG-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Definitions
- the present invention relates to a semiconductor surface treating agent composition and a semiconductor surface treating method using the same.
- the present invention relates to a semiconductor surface treating agent composition that also enables a semiconductor surface treatment method and a semiconductor surface treating method using the composition.
- semiconductor elements such as IC and LSI suppress light scattering during exposure on conductive metal films, insulating layers, and low dielectric layers formed on a substrate such as a silicon wafer by vapor deposition.
- a substrate such as a silicon wafer by vapor deposition.
- an antireflection film layer and a resist layer for this, and then selectively exposing and developing this to form a resist pattern, using this resist pattern as a mask, a conductive metal film, an insulating layer, a low dielectric layer.
- a fine circuit is formed, and the resist layer and the antireflection film layer are peeled off by ashing of the resist layer, etc. by ashing, etc., and then remain in the ashing process, etc.
- the resist layer residue and the antireflection film layer residue are produced by treating with a cleaning (peeling) solution or the like.
- An object of the present invention is to provide a semiconductor surface treating agent composition capable of peeling off a resist hardened layer generated during an etching process, and a semiconductor surface treating method using the composition.
- the present invention relates to [I] a compound that generates fluorine ions in water, [II] a carbon radical generator, [III] water, [IV] an organic solvent, and [V] hydroxylamine and the general formula [1].
- R 1 is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms or a linear or branched substituted alkyl group having 1 to 3 carbon atoms and having a hydroxyl group having 1 to 3 carbon atoms.
- R 2 represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, or a linear or branched group having 1 to 4 carbon atoms having 1 to 3 hydroxyl groups.
- the at least one compound selected from the group consisting of hydroxylamine derivatives represented by the formula (1) is a semiconductor surface treating agent composition characterized by comprising:
- the present invention also provides [I] a compound that generates fluorine ions in water, [II] a carbon radical generator, [III] water, [IV] an organic solvent, [V] hydroxylamine, and the above general formula [1].
- the semiconductor surface treating method is characterized by using a semiconductor surface treating agent composition containing at least one compound selected from the group consisting of hydroxylamine derivatives represented by formula (1).
- the treatment composition for a semiconductor surface of the present invention has an adverse effect on an antireflection film layer in a manufacturing process of a semiconductor element or the like on an insulating film such as a copper wiring on the surface of a semiconductor substrate or a low-k film below the antireflection film layer.
- the semiconductor surface treatment method of the present invention is an effective method for peeling off the antireflection film layer and the resist layer in a simple and short time, and [II] if a carbon radical generator is used as a radical generation source.
- the antireflection film layer can be easily peeled without adversely affecting the insulating film such as the copper wiring on the surface of the semiconductor substrate or the low-k film under the antireflection film layer. It becomes possible.
- the present inventors have at least [I] a compound that generates fluorine ions (fluoride ions) in water, [II] a carbon radical generator, and [III] water. , [IV] an organic solvent, and [V] hydroxylamine and at least one compound selected from the group consisting of hydroxylamine derivatives represented by the above general formula [1] (hereinafter abbreviated as hydroxylamine or / and derivatives thereof)
- hydroxylamine or / and derivatives thereof hydroxylamine derivatives represented by the above general formula [1]
- linear, branched or cyclic alkyl group having 1 to 6 carbon atoms represented by R 1 and R 2 in the general formula [1] include, for example, a methyl group, an ethyl group, an n-propyl group, Isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, cyclobutyl group, n-pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group, neopentyl group, 2-methylbutyl group, 1,2-dimethylpropyl group, 1-ethylpropyl group, cyclopentyl group, n-hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, neohexyl group, 2-methylpentyl group, 1,2-dimethylbutyl Group,
- linear or branched substituted alkyl group having 1 to 3 carbon atoms and having 1 to 3 hydroxyl groups represented by R 1 and R 2 in the general formula [1] include, for example, 1-hydroxyethyl Group, 2-hydroxyethyl group, 1,2-dihydroxyethyl group, 2,2-dihydroxyethyl group, 1-hydroxy-n-propyl group, 2-hydroxy-n-propyl group, 3-hydroxy-n-propyl group 1,2-dihydroxy-n-propyl group, 1,3-dihydroxy-n-propyl group, 2,2-dihydroxy-n-propyl group, 2,3-dihydroxy-n-propyl group, 3,3-dihydroxy -n-propyl group, 1,2,3-trihydroxy-n-propyl group, 2,2,3-trihydroxy-n-propyl group, 2,3,3-trihydroxy-n-propyl group, 1- Hydroxyisopropyl group, 2-hydroxy Sopropyl group, 1,1-dihydroxyiso
- Specific examples of compounds that generate fluorine ions (fluoride ions) in water in the semiconductor surface treating agent composition of the present invention include hydrogen fluorides such as ammonium fluoride and hydroxylamine fluoride salts.
- Salts with inorganic non-metallic bases for example, salts with hydrogen fluoride and organic bases such as primary to tertiary alkylamines, primary to tertiary alkanolamines, alicyclic amines, heterocyclic amines, Examples include quaternary ammonium fluoride salts, hydrogen fluoride, and the like.
- the primary to tertiary alkylamine for example, carbon such as methylamine, ethylamine, propylamine, butylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, etc.
- Examples of compounds that generate fluorine ions (fluoride ions) in water, which are salts of hydrogen fluoride and these alkyl amines, include monomethyl ammonium fluoride and monoethyl ammonium.
- Fluoride monopropylammonium fluoride, monobutylammonium fluoride, dimethylammonium fluoride, diethylammonium fluoride, dipropylammonium fluoride, dibutylammonium fluoride Id, trimethylammonium fluoride, triethylammonium fluoride, tripropylammonium fluoride, tributylammonium fluoride, and the like.
- Examples of primary to tertiary alkanolamines include monoethanolamine, diethanolamine, and triethanolamine.
- Fluorine ions (fluoride ions) in water which are salts of hydrogen fluoride and these alkanolamines
- compounds that generate include monoethanolammonium fluoride, diethanolammonium fluoride, and triethanolammonium fluoride.
- examples of the alicyclic amine include cyclohexylamine, dicyclohexylamine, tricyclohexylamine, etc., and fluorine ions (fluoride ions) in water, which is a salt of hydrogen fluoride and these alicyclic amines.
- Examples of the generated compound include monocyclohexylammonium fluoride, dicyclohexylammonium fluoride, and tricyclohexylammonium fluoride.
- Examples of the heterocyclic amine include pyrrolidine, piperidine, morpholine, pyrrole, pyridine and the like, and fluorine ions (fluoride ions) in water, which are salts of hydrogen fluoride and these heterocyclic amines.
- Examples of the generated compound include pyrrolidinium fluoride, piperidinium fluoride, morpholinium fluoride, pyrrolinium fluoride, and pyridinium fluoride.
- examples of the quaternary ammonium fluoride salt include tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride.
- produces a fluorine ion (fluoride ion) in these water may be used individually by 1 type, and may be used in combination of multiple types suitably.
- the antireflection film layer is effectively peeled off by using a combination of [I] a compound that generates fluorine ions (fluoride ions) in water and [II] a carbon radical generator described below. It becomes possible to do.
- Examples of the [II] carbon radical generator in the semiconductor surface treating agent composition of the present invention include compounds that suitably generate carbon radicals upon heating or light irradiation.
- 2,2′-azobis (4-methoxy-2,4-dimethylvaleronitrile), 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis (2-methylpropionitrile), 2,2'- Azonitrile-based carbon radical generators such as azobis (2-methylbutyronitrile), 1,1′-azobis (cyclohexane-1-carbonitrile), 1-[(1-cyano-1-methylethyl) azo] formamide,
- Benzoin alkyl ether-based carbon radical generators for example, benzyl ketal-based carbon radical generators such as 2,2-dimethoxy-1,2-diphenylethane-1-one, such as benzophenone, 4,4′-bis (diethylamino) benzophenone, Acrylic benzophenone, methyl benzoylbenzoate, 2-benzoylnaphthalene, 4-benzoylbiphenyl, 4-benzoyldiphenyl ether, 1,4-dibenzoylbenzene, [4- (methylphenylthio) pheny Benzophenone-based carbon radical generators such as phenyl] methane, for example, aminobenzoate-based carbon radical generators such as p-dimethylaminobenzoic acid ethyl ester, p-dimethylaminobenzoic acid isoamylethyl ester, such as 2-hydroxy-2 -Methyl-1-phenylpropan
- 2,2'-azobis (4-methoxy-2,4-dimethylvaleronitrile), 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis (2-methylpropionitrile)
- 2,2′-azobis (2-methylbutyronitrile)
- 1,1′-azobis 1,1′-azobis (cyclohexane-1-carbonitrile)
- Azonitrile-based carbon radical generators such as 2,2′-azobis ⁇ 2-methyl-N- [1,1-bis (hydroxymethyl) -2-hydroxyethyl] propionamide ⁇ , 2,2′-azobis ⁇ 2 -Methyl-N- [2- (1-hydroxybutyl)] propionamide ⁇ , 2,2′-azobis [2-methyl-N- (2-hydroxyethyl) propionamide], 2,2′-azobis [N -(2-propenyl) -2-methylpropionamide], 2,2′-azobis (N-(2-propenyl) -2-methylpro
- Azoamide-based carbon radical generators such as 2,2′-azobis (2-methylpropionamidine) dihydrochloride, 2,2′-azobis [N- (2-carboxyethyl) -2-methylpropionamid
- a carbon radical is suitably generated by heating a chain azoamidine-based carbon radical generator such as tetrahydrate, for example, an azoester-based carbon radical generator such as dimethyl-2,2′-azobis (2-methylpropionate).
- benzyl ketal carbon radical generators such as 2,2-dimethoxy-1,2-diphenylethane-1-one, such as 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1- ⁇ 4- [4- (2-hydroxy-2-methylpropionyl) [Benzyl] phenyl ⁇ -2-methylpropan-1-one, 1,2-hydroxyalkylphenone-based carbon radical generators such as 1-hydroxycyclohexyl phenyl ketone, such as 2-methyl Ru-1- (4-methylthiophenyl) -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2- (dimethylamino) -2 Light irradiation with a wavelength of 200 to 750 nm, such as 1,2-aminoalky
- carbon radical generators there are compounds that can generate carbon radicals suitably by heating, which can generate carbon radicals even by light irradiation.
- Carbon-based radical generators, chain azoamidine-based carbon radical generators, cyclic azoamidine-based carbon radical generators, azoester-based carbon radical generators, and the like correspond to those capable of generating carbon radicals even with light.
- Carbon radicals can also be generated by light irradiation at 750 nm.
- a compound that suitably generates a carbon radical by heating can generate a carbon radical only by normal heating, but the above-mentioned azonitrile-based carbon radical generator, azoamide-based carbon radical generator, chain azoamidine-based compound
- azonitrile-based carbon radical generator azoamide-based carbon radical generator
- chain azoamidine-based compound For compounds that generate carbon radicals even when irradiated with light, such as carbon radical generators, cyclic azoamidine-based carbon radical generators, azoester-based carbon radical generators, etc.
- Carbon radicals may be generated by a method using a combination of light irradiation and light irradiation.
- a compound that suitably generates a carbon radical by light irradiation means one that can easily generate a carbon radical by light irradiation, and does not mean one that does not generate a carbon radical by heating. That is, the above-mentioned compound that suitably generates a carbon radical when irradiated with light is capable of generating a carbon radical even when heated.
- a compound that suitably generates a carbon radical by light irradiation can generate a carbon radical only by light irradiation.
- the carbon radical can also be generated by heating alone or by combining heating and light irradiation. Can occur.
- the carbon radical generators of these preferred specific examples are useful from the viewpoints of industrial availability, economical efficiency, and efficient removal of the antireflection film layer in a short time.
- composition comprising a combination of [I] a compound that generates fluorine ions (fluoride ions) in water and [II] a carbon radical generator as described above for the treatment of a semiconductor surface, an antireflection film layer, etc. It becomes possible to peel the semiconductor surface layer. That is, the present inventors were provided for manufacturing a semiconductor such as an antireflection film layer by a simple method such as immersion without using ashing or the like by using a composition containing these components. It was the first time that the surface layer could be peeled off.
- the inventors have found a composition that can peel off the resist cured layer formed on the surface at the same time as the antireflection film layer.
- [I] carbon radical generators combined with compounds that generate fluoride ions (fluoride ions) in water are better anti-reflective coatings than compounds that generate oxygen radicals such as hydrogen peroxide and ozone. It is an excellent compound that can peel off a treatment layer such as a layer and can peel off the above-described layer without adversely affecting a metal wiring such as a low-k film or a copper wiring under the treatment layer.
- Water in the semiconductor surface treating agent composition of the present invention is not particularly limited as long as it does not adversely affect the low-k film or the metal wiring.
- normal water such as distilled water or deionized water is used.
- purified water, ultrapure water, etc. among which ultrapure water is preferred. Since ultrapure water contains almost no impurities, it can be suitably used for a substrate provided with metal wiring such as copper wiring.
- the organic solvent in the semiconductor surface treating agent composition of the present invention is not particularly limited as long as it does not adversely affect the peeling of the antireflection film layer, and is usually an organic solvent used in this field. Any organic solvent may be used, but preferably an organic solvent capable of peeling the resist layer simultaneously with the peeling of the antireflection film layer. Specific examples of preferable organic solvents include alcohol-based, ester-based, amide-based, or sulfoxide-based organic solvents, each of which has a dipole moment of 1.5 to 7.5 debye, And organic solvents having a specific gravity in the range of 0.7 to 1.2.
- ethylene Alcohol solvents such as glycol, for example, ethyl acetate, propyl acetate, isobutyl acetate, ethyl lactate, diethyl oxalate, diethyl tartrate, ⁇ -butyrolactone
- Isopropanol, ethylene Glycol, ⁇ -butyrolactone, and N-methylpyrrolidone are more preferable, and isopropanol, ⁇ -butyrolactone, and N-methylpyrrolidone are more preferable.
- these organic solvents may be used alone or in combination of a plurality of types as appropriate, as the organic solvent in the semiconductor surface treating agent composition of the present invention, A combination of isopropanol and ⁇ -butyrolactone or a combination of isopropanol and N-methylpyrrolidone is particularly preferred.
- the dipole moment and specific gravity of an organic solvent refer to the dipole moment and specific gravity of an organic solvent obtained by mixing them. Instead, it means that the dipole moment of each combined organic solvent is 1.5 to 7.5 debye, and the specific gravity of each organic solvent itself is in the range of 0.7 to 1.2.
- the above [IV] organic solvent is included in the semiconductor surface treating agent composition of the present invention, so that not only the antireflection film layer but also the resist layer and the resist layer are more difficult to remove than the resist layer. It is also possible to peel off the resist hardened layer that occurs at this time.
- hydroxylamine such as mono- or dimethylhydroxylamine, mono- or diethylhydroxylamine, mono- or di-n-propylhydroxylamine, mono- or diisopropylhydroxylamine
- hydroxylamine such as mono- or dimethylhydroxylamine, mono- or diethylhydroxylamine, mono- or di-n-propylhydroxylamine, mono- or diisopropylhydroxylamine
- hydroxylamine derivatives represented by the above general formula [1] commercially available ones are used, or, for example, an epoxide such as glycidol is dropped into an aqueous solution of hydroxylamine or monoalkyl-substituted hydroxylamine, and then reacted at an appropriate temperature. It is sufficient to use what is appropriately synthesized by a known method such as making it.
- the at least one compound selected from the group consisting of the above [V] hydroxylamine and the hydroxylamine derivative represented by the general formula [1] is contained in the semiconductor surface treating agent composition of the present invention, thereby reducing its action.
- the resist cured layer can be peeled off in a shorter time. That is, the present inventors have selected hydroxylamine or / and derivatives thereof as a reducing agent in the semiconductor surface treating agent composition of the present invention, among these various reducing agents, and by using these, hydroxylamine or / It was found for the first time that the antireflection film layer and the resist layer can be peeled off in a shorter time than a composition containing a reducing agent other than its derivatives.
- the semiconductor surface treating agent composition of the present invention preferably contains [VI] acid in addition to the components described above.
- [VI] acid in addition to the components described above.
- the above [VI] acid has an action of making pH acidic, and further has an action of assisting a compound generating fluorine ions (fluoride ions) in water to generate hydrogen fluoride in water.
- fluorine ions fluoride ions
- Specific examples include inorganic acids such as hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid, such as formic acid, acetic acid, trifluoroacetic acid, propionic acid, butyric acid, valeric acid, caproic acid, enanthic acid, and caprylic acid.
- Aliphatic monocarboxylic acids such as pelargonic acid, capric acid, lauric acid
- aliphatic dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, fumaric acid, such as lactic acid
- Aliphatic hydroxycarboxylic acids such as malic acid, tartaric acid and citric acid
- aliphatic tricarboxylic acids such as aconitic acid
- aliphatic oxocarbons such as pyruvic acid.
- Aromatic monocarboxylic acids such as benzoic acid such as benzoic acid, aromatic dicarboxylic acids such as phthalic acid, isophthalic acid and terephthalic acid, aromatic hydroxycarboxylic acids such as salicylic acid and gallic acid, and aromatics such as melittic acid Examples thereof include organic acids such as hexacarboxylic acid.
- the [VI] acid may be in the form of a salt as long as it shows acidity. Specific examples of the acid salt include inorganic salts such as sodium dihydrogen phosphate and potassium dihydrogen phosphate.
- Inorganic acid salts such as alkali metal salts of acids such as ammonium salts of inorganic acids such as ammonium dihydrogen phosphate, such as oxalic acid-1 sodium, oxalic acid-1 potassium, malonic acid-1 sodium, malonic acid-1 potassium, Succinic acid-1 sodium, succinic acid-1 potassium, glutaric acid-1 sodium, glutaric acid-1 potassium, adipic acid-1 sodium, adipic acid-1 potassium, pimelic acid-1 sodium, pimelic acid-1 potassium, maleic acid Alkali metal salts of aliphatic dicarboxylic acids such as sodium-1 sodium, maleic acid-1 potassium, fumaric acid-1 sodium, fumaric acid-1 potassium, such as oxalic acid-1 Of aliphatic dicarboxylic acids such as ammonium, malonic acid-1 ammonium, succinic acid-1 ammonium, glutaric acid-1 ammonium, adipic acid-1 ammonium, pimelic acid-1 ammonium, maleic acid-1 ammonium
- Ammonium salts such as malic acid-1 sodium, malic acid-1 potassium, tartaric acid-1 sodium, tartaric acid-1 potassium, citric acid-1 sodium, citric acid-2 sodium, citric acid-1 potassium, citric acid-2 potassium, etc.
- Alkali metal salts of aliphatic hydroxycarboxylic acids such as ammonium salts of aliphatic hydroxycarboxylic acids such as malic acid-1 ammonium, tartaric acid-1 ammonium, citric acid-1 ammonium, citric acid-2 ammonium and the like, for example, aconitic acid-1 Sodium, aconitic acid-2sodium, aco Alkali metal salts of aliphatic tricarboxylic acids such as tutonic acid-1 potassium and aconitic acid-2 potassium, for example, ammonium salts of aliphatic tricarboxylic acids such as aconitic acid-1 ammonium and aconitic acid-2 ammonium, such as phthalic acid-1 Alkali metal salt
- these acids may be used alone or in combination of a plurality of kinds as appropriate.
- a carboxylic acid having one or more hydroxyl groups in the structure is classified as a hydroxycarboxylic acid regardless of the number of carboxyl groups.
- hydrogen fluoride itself is an acid, it corresponds to the above [I] a compound that generates fluorine ions (fluoride ions) in water, and generates hydrogen fluoride in water, but it assists the generation. Therefore, hydrogen fluoride is classified into the above-mentioned [I] compounds that generate fluorine ions (fluoride ions) in water.
- [VI] acids from the viewpoint of solubility in water, inorganic acids, aliphatic dicarboxylic acids or salts thereof, aliphatic hydroxycarboxylic acids or salts thereof, aliphatic tricarboxylic acids or salts thereof, aromatic dicarboxylic acids or Its salt, aromatic hydroxycarboxylic acid, and aromatic hexacarboxylic acid are preferred.
- aliphatic dicarboxylic acid or a salt thereof, aliphatic hydroxycarboxylic acid from the viewpoint of easy handling, industrial availability, economy, etc.
- a semiconductor substrate having a metal wiring that is adversely affected by inorganic acids or alkali metals such as a multilayer copper wiring structure, for example, hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, etc.
- inorganic acids, inorganic acid salts, and alkali metal salts of organic acids since the presence of inorganic acids or salts thereof, or alkali metal salts of organic acids as described above may cause deterioration of electrical characteristics on the semiconductor substrate. May not be desirable.
- the semiconductor surface treating agent composition of the present invention may contain [VII] surfactant in addition to the above-described constituent components.
- [I] assists solubilization of compounds that generate fluoride ions (fluoride ions) in water, and effects such as compounds that generate fluoride ions (fluoride ions) in water It can be further increased.
- examples of the [VII] surfactant include a cationic surfactant, an anionic surfactant, a nonionic surfactant, and an amphoteric surfactant that are usually used in this field.
- Specific examples of the cationic surfactant include primary to tertiary alkylamine salts such as monostearyl ammonium chloride, distearyl ammonium chloride, tristearyl ammonium chloride, such as monostearyl trimethyl ammonium chloride, distearyl dimethyl.
- Quaternary alkylammonium salts such as ammonium chloride, stearyldimethylbenzylammonium chloride, monostearylbis (polyethoxy) methylammonium chloride, such as N-cetylpyridinium chloride, alkylpyridinium salts such as N-stearylpyridinium chloride, such as cetylethylmorpholine Nitroethosulphate, 4- (4,6-Dimethoxy-1,3,5-triazin-2-yl) -4-methylmorpholinium Examples thereof include N, N-dialkylmorpholinium salts such as muchloride, and fatty acid amide salts such as polyethylene polyamine.
- anionic surfactant examples include sodium alkylcarboxylate, potassium alkylcarboxylate, ammonium alkylcarboxylate, sodium alkylbenzenecarboxylate, potassium alkylbenzenecarboxylate, and ammonium alkylbenzenecarboxylate.
- Anionic surfactants having a carboxyl group for example, alkylsulfonic acid sodium salt, alkylsulfonic acid potassium salt, alkylsulfonic acid ammonium salt, alkylbenzenesulfonic acid sodium salt, alkylbenzenesulfonic acid potassium salt, alkylbenzenesulfonic acid ammonium salt, alkylnaphthalene Sulfonic acid sodium salt, alkyl naphthalene sulf
- nonionic surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene stearyl ether, polyoxyethylene alkenyl ethers such as polyoxyethylene oleyl ether, such as polyoxyethylene nonyl, and the like.
- Polyoxyalkylene alkyl phenyl ethers such as phenyl ether, polyoxyalkylene glycols such as polyoxypropylene polyoxyethylene glycol, polyoxyethylene monoalkylates such as polyoxyethylene monostearate, such as bispolyoxyethylene Bispolyoxyethylene alkylamines such as stearylamine, eg bispolyoxyethylenealkylamides such as bispolyoxyethylenestearylamide, examples In N, such as alkyl amine oxides such as N- dimethyl alkylamine oxides.
- amphoteric surfactants include carboxybetaines such as alkyl-N, N-dimethylaminoacetic acid betaine and alkyl-N, N-dihydroxyethylaminoacetic acid betaine such as alkyl-N, N.
- carboxybetaines such as alkyl-N, N-dimethylaminoacetic acid betaine and alkyl-N, N-dihydroxyethylaminoacetic acid betaine such as alkyl-N, N.
- -Sulfobetaines such as dimethylsulfoethyleneammonium betaine, for example, imidazolinium betaines such as 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolinium betaine.
- these surfactants may be used alone or in combination of a plurality of types as appropriate.
- [VII] from the viewpoints of solubilizing ability, industrial availability, economical efficiency, etc. of compounds that generate fluorine ions (fluoride ions) in water, for example, Alkyl carboxylic acid sodium salt, alkyl carboxylic acid potassium salt, alkyl carboxylic acid ammonium salt, alkyl benzene carboxylic acid sodium salt, alkyl benzene carboxylic acid potassium salt, alkyl benzene carboxylic acid ammonium salt, polyoxyalkylene alkyl ether carboxylic acid sodium salt, polyoxyalkylene alkyl Ether carboxylic acid potassium salt, polyoxyalkylene alkyl ether carboxylic acid ammonium salt, N-acyl sarcosine acid sodium salt, N-acyl sarcosine acid potassium salt, N-acyl sarcosine acid ammonium salt, N-acyl group
- Polyoxyethylene monoalkylates such as bispolyoxyethylene alkylamines such as bispolyoxyethylene stearylamine, such as bispolyoxyethylene
- Nonionic surfactants such as bispolyoxyethylene alkylamides such as stearylamide, and alkylamine oxides such as N, N-dimethylalkylamine oxide are preferred.
- the semiconductor surface treating agent composition of the present invention may further contain the following reducing agent.
- the following reducing agent In addition to hydroxylamine and / or its derivatives, it can be expected that the resist cured layer will be peeled off in a shorter time by using another reducing agent in combination.
- examples of the reducing agent include reducing agents usually used in this field.
- reducing agents usually used in this field Specifically, for example, hydrazine or derivatives thereof, for example, sulfites such as sodium sulfite and ammonium sulfite, such as sodium thiosulfite, thiosulfite, and the like.
- Thiosulfites such as ammonium sulfate, aldehydes such as formaldehyde and acetaldehyde, carboxylic acids having reducibility such as formic acid, oxalic acid, succinic acid, lactic acid, malic acid, citric acid and pyruvic acid, such as ascorbic acid or ascorbic acid ester
- Ascorbic acid derivatives such as isoascorbic acid or isoascorbic acid ester, such as pentoses having reducing properties such as arabinose, xylose, ribose, etc., such as hexoses having reducing properties such as glucose, mannose, fructose, galactose, etc. Sugar and the like.
- these reducing agents may be used alone or in combination of a plurality of types as appropriate.
- carboxylic acids having reducing properties such as formic acid, oxalic acid, succinic acid, lactic acid, malic acid, citric acid, and pyruvic acid also exhibit the action as an acid described above, It is also possible to use these reducing carboxylic acids alone as the above-mentioned acid as two components of the reducing agent.
- hydrazine derivative examples include compounds such as hydrazine sulfate and hydrazine monohydrochloride
- specific examples of the ascorbic acid ester include, for example, ascorbyl stearate, ascorbyl palmitate, and dipalmitic acid.
- Examples include compounds such as ascorbyl, tetrahexyldecanoic acid ascorbyl, ascorbic acid glucoside, and specific examples of the isoascorbic acid ester include, for example, isoascorbyl stearate, isoascorbyl palmitate, isoascorbyl dipalmitate, tetrahexyldecanoic acid Examples include compounds such as isoascorbyl and isoascorbic acid glucoside.
- ascorbic acid esters and isoascorbic acid esters for example, sodium ascorbate, sodium ascorbate sulfate, sodium ascorbate phosphate, magnesium ascorbate phosphate, sodium isoascorbate, sodium isoascorbate sulfate, phosphorous isoascorbate
- Ascorbic acid esters containing alkali metals and alkaline earth metals such as sodium phosphate and magnesium isoascorbate phosphate may cause deterioration of electrical characteristics on the semiconductor substrate.
- the use of ascorbic acid esters containing the above alkali metals or the like is not preferable.
- ascorbic acid derivatives such as ascorbic acid or ascorbic acid ester, isoascorbic acid or isoascorbic acid ester are suitable from the viewpoints of moderate reduction performance, industrial availability, economy, etc.
- ascorbic acid or ascorbic acid ester is more preferable, and among them, ascorbyl palmitate is more preferable.
- the weight of each component in the composition when the object to be treated peels not only the antireflection film layer, but also the resist layer and the resist cured layer simultaneously with the antireflection film layer.
- % Concentration that is, [I] a compound that generates fluorine ion (fluoride ion) in water, [II] carbon radical generator, [III] water, [IV] organic solvent, [V] hydroxylamine, and the above general formula
- the weight% concentration of at least one compound selected from the group consisting of hydroxylamine derivatives represented by [1], [VI] acid, and [VII] surfactant will be described below.
- the concentration by weight of the compound that generates fluorine ions (fluoride ions) in water generates the fluorine ions (fluoride ions) relative to the total weight of the composition.
- the weight of the compound is usually 0.01 to 5% by weight, preferably 0.01 to 1% by weight.
- the concentration by weight of the [II] carbon radical generator in the semiconductor surface treating agent composition of the present invention is usually 0.05 to 10% by weight, preferably as the weight of the carbon radical generator with respect to the total weight of the composition. 0.1 to 2% by weight.
- the weight% concentration of [III] water in the semiconductor surface treating agent composition of the present invention is usually 0.02 to 10% by weight, preferably 0.03 to 7% by weight as the weight of the water relative to the total weight of the composition. %.
- the concentration by weight of [IV] organic solvent in the semiconductor surface treating agent composition of the present invention is usually 80 to 99% by weight, preferably 85 to 99% by weight as the weight of the organic solvent relative to the total weight of the composition. is there.
- the weight percent concentration of [V] hydroxylamine or / and its derivative in the semiconductor surface treating agent composition of the present invention is usually 0.001 to as the weight of the hydroxylamine or / and its derivative relative to the total weight of the composition. 5% by weight, preferably 0.001 to 1% by weight.
- the concentration by weight of [VI] acid in the semiconductor surface treating agent composition of the present invention is usually 0.1 to 5% by weight, preferably 0.1 to 1% by weight, based on the total weight of the composition. %.
- the concentration by weight of the [VII] surfactant in the semiconductor surface treating agent composition of the present invention is usually 0.05 to 5% by weight, preferably 0.8%, as the weight of the surfactant relative to the total weight of the composition. 1 to 3% by weight.
- the semiconductor surface treating agent composition of the present invention contains [III] water and [IV] an organic solvent, it is used as it is for the treatment of the semiconductor surface, but in order to maintain a certain degree of peeling performance.
- the pH range is usually preferably 11 or less.
- the pH of the composition is preferably acidic to neutral, and the range is 7 or less, more preferably 1 to 4. .
- pH adjustment suitably so that it may become in said range by adjusting suitably the kind, density
- the semiconductor surface treating agent composition of the present invention may be appropriately added with components that do not interfere with the effects of the present invention, such as a metal corrosion inhibitor, as necessary. it can.
- the metal corrosion inhibitor examples include benzotriazoles such as benzotriazole derivatives such as carboxybenzotriazole and aminobenzotriazole, thioureas such as thiourea, and thiol compounds such as mercaptothiazole, mercaptoethanol, and thioglycerol.
- benzotriazoles such as benzotriazole derivatives such as carboxybenzotriazole and aminobenzotriazole
- thioureas such as thiourea
- thiol compounds such as mercaptothiazole, mercaptoethanol, and thioglycerol.
- carboxylic acid derivatives such as quinolinecarboxylic acid.
- these metal corrosion inhibitors may be used alone or in combination of a plurality of types as appropriate.
- the method for preparing the semiconductor surface treating agent composition of the present invention is not particularly limited as long as it is usually carried out in this field, and specifically, for example, in a liquid charged with a predetermined amount of [III] water, I] A compound that generates fluorine ions (fluoride ions) in water and [II] a carbon radical generator are added and stirred at room temperature. Then, while stirring is continued, [IV] an organic solvent and [V] Hydroxylamine or / and derivatives thereof are added, and if necessary, [VI] acid is added to adjust to a desired pH, and if necessary, [VII] a surfactant is added to treat the semiconductor surface of the present invention.
- An agent composition may be used.
- the semiconductor surface treating agent composition of the present invention contains a carbon radical generator, it cuts light of a wavelength in a specific region required for the carbon radical generator such as a yellow lamp to generate carbon radicals. It is desirable to prepare under low illumination, such as under dark, dark, or room temperature.
- the substrate that is the target of the semiconductor surface treatment method of the present invention is usually a substrate manufactured in a manufacturing process of a semiconductor element, a liquid crystal display element, etc., for example, a metal wiring such as a copper wiring or an insulation such as a low-k film.
- a substrate or the like having at least an antireflection film layer applied to the top of the wafer on which a film or the like is laid, and among them, a substrate having at least an antireflection film layer applied to the top of the wafer on which a low-k film is laid is preferable.
- a substrate in which at least both an antireflection film layer and a resist layer are coated on a wafer on which a low-k film is laid is more preferable, and among them, the surface of the resist layer is a resist cured layer.
- a substrate is particularly preferred.
- a substrate (a semiconductor substrate having a multilayer copper wiring structure) in which copper wiring is further laid on the substrate as described above may be desirable.
- the antireflection film layer that is a target of the semiconductor surface treatment method of the present invention includes a top antireflection film (TARC) layer, a bottom antireflection film (BARC) layer, and the like.
- TARC top antireflection film
- BARC bottom antireflection film
- the semiconductor surface treating agent composition of the present invention is cured by etching the surface of the resist layer during the etching process in the manufacturing process of a semiconductor element or the like. It is also possible to remove the resist layer that has become more difficult to peel, that is, the cured resist layer, and it is also effective to remove the resist layer and the resist cured layer applied on the antireflection film layer. Therefore, the antireflection coating layer is preferably a bottom antireflection coating (BARC) layer.
- the semiconductor surface treating agent composition of the present invention if having an appropriate composition, an antireflection film [Top Anti-Reflection Coating (TARC)] applied on the resist layer. Needless to say, even the layer can be peeled off together with the resist layer.
- TARC Topic Anti-Reflection Coating
- the antireflection film layer is a coating for the purpose of reducing the reflection of the substrate surface usually used in this field and increasing the transmittance, and excimers for g-line, i-line, KrF, ArF, etc.
- Any of laser, electron beam, and X-rays may be used, but preferably an anti-reflective film layer for excimer lasers such as KrF and ArF, electron beam, and X-ray, more preferably a melamine-based material It is an antireflection film layer for excimer laser such as KrF and ArF.
- the resist layer which is the object of the semiconductor surface treatment method of the present invention is a so-called photoresist film formed from a resist material containing an organic polymer compound, and is for g-line, i-line, KrF, ArF.
- a resist layer for excimer laser such as KrF or ArF may be used.
- the low-k film includes, for example, a fluorine-containing silicon oxide film applied under a treatment layer such as an antireflection film layer or a resist layer, and has a relative dielectric constant of 4 or less, preferably 3 or less.
- Insulating film including porous low-k film and ultra low-k film).
- a substrate to be subjected to the semiconductor surface treatment method of the present invention for example, a substrate in which a resist layer is coated on the antireflection film layer is etched to form a substrate (antireflection film) on which a cured resist layer is formed.
- a substrate in which a resist layer is coated on the antireflection film layer is etched to form a substrate (antireflection film) on which a cured resist layer is formed.
- the semiconductor surface treating agent composition of the present invention [I] a compound that generates fluorine ions (fluoride ions) in water, [II] a carbon radical generator, [III] water, [IV] an organic solvent,
- a solution of a composition prepared by preparing [V] hydroxylamine or / and a derivative thereof, if necessary, [VI] acid, [VII] surfactant and the like within the above-described predetermined concentration range is prepared.
- a method of immersing the semiconductor substrate as described above while irradiating the solution with light of a predetermined wavelength (active energy rays), and immersing the semiconductor substrate as described above while heating the solution to a predetermined temperature for example, a method of immersing the semiconductor substrate as described above while irradiating the solution with light of a predetermined wavelength (active energy rays), and immersing the semiconductor substrate as described above while heating the solution to a predetermined temperature.
- the method by combining the light irradiation and the heating, and appropriately adopting a method of immersing the semiconductor substrate as described above, not only the antireflection film layer but also the peeling of the resist layer and the resist cured layer, that is, A treatment of the semiconductor surface is achieved.
- the preferred wavelength of light (active energy ray) when irradiating with predetermined light (active energy ray) is usually a wavelength of 200 to 750 nm, preferably a wavelength of 200 to 450 nm.
- the carbon radical generator in the semiconductor surface treating agent composition of the present invention can be efficiently used. Carbon radicals are generated, and the antireflection film layer can be effectively peeled off in a shorter time.
- a preferable temperature at the time of heating is usually 30 to 70 ° C., preferably 30 to 50 ° C.
- Semiconductor surface treating agent composition of the present invention irradiated with light (active energy rays) having a wavelength as described above [composition only for light irradiation], semiconductor surface treating agent of the present invention heated to a predetermined temperature as described above
- the preferable immersion time is 1 to 30 minutes, more preferably 1 to 5 minutes.
- the method using only light irradiation is easier to control the generation of the radical of the carbon radical generator than the method using only heating or the method using heating together.
- This is a preferred method that produces advantages such as being less susceptible to adverse effects and advantageous in terms of cost performance.
- it is desirable to employ a method in which the semiconductor surface treating agent composition of the present invention is irradiated with light (active energy rays) having a preferable wavelength as described above but not heated.
- light active energy rays
- the semiconductor substrate is simply left in the semiconductor surface treating agent composition of the present invention, for example, the semiconductor surface treating agent composition of the present invention.
- a method of dipping while stirring the composition for example, a method of dipping while shaking the composition, such as a method of dipping while treating the semiconductor surface treating agent composition of the present invention with an inert gas such as nitrogen gas, for example, a semiconductor substrate
- an inert gas such as nitrogen gas
- dipping methods such as a method of dipping while oscillating the semiconductor substrate, such as a method of dipping while moving using a moving means such as a conveyor, and any dipping method may be adopted.
- the semiconductor surface treatment method as described above is merely an example, and other methods may be employed.
- a method of immersing the semiconductor substrate in the semiconductor surface treatment agent composition of the present invention that has been irradiated with light in advance before immersion without performing light irradiation during the immersion is adopted. May be.
- a method of dipping a semiconductor substrate in the semiconductor surface treating agent composition of the present invention set in advance to a predetermined temperature before dipping without applying heat during dipping It may be adopted.
- the treatment composition for a semiconductor surface of the present invention which is appropriately heated or / and irradiated with light, may be applied to a semiconductor substrate, even if not a dipping method, You may make it employ
- a device required for light irradiation heating, dipping, stirring, bubbling, coating, spraying, etc., a device usually used in this field is sufficient.
- a substrate in which a resist layer is coated on an antireflection film layer and a cured resist layer is formed on the surface has been described as an example.
- the substrate coated only with the above, or the substrate on which the resist cured layer is formed only the resist cured layer and the resist layer are peeled off, and the treatment layer becomes only the antireflection film layer, or the resist cured layer. If the above-described method is appropriately employed even for a substrate coated with an antireflection film layer and a resist layer that does not exist, the antireflection film layer or both of the antireflection film layer and the resist layer are peeled off. That is, the semiconductor surface can be treated.
- the semiconductor surface treating agent composition of the present invention can be a composition that does not contain a compound that generates oxygen radicals such as an oxygen radical generator that is a component that adversely affects metal wiring such as copper wiring, for example.
- a compound that generates oxygen radicals such as an oxygen radical generator that is a component that adversely affects metal wiring such as copper wiring
- it is effective for processing a semiconductor substrate having a multilayer copper wiring structure, and the above-described processing method can be applied to a semiconductor substrate having a multilayer copper wiring structure.
- the semiconductor surface treatment method of the present invention requires a conventional ashing step and a cleaning (peeling) step of the residue of the ashed resist layer and the antireflection film layer after the ashing step.
- it is an excellent treatment method capable of simultaneously removing not only the antireflection film layer but also the resist layer and the resist cured layer only by immersion by heating or light irradiation.
- an ArF antireflection film layer made of a melamine-based material was applied to a 300 mm side silicon wafer, and an ArF resist layer was applied on top of the antireflection film layer. I used something.
- This substrate sample is subjected to dry etching by ion sputtering to form a resist cured layer on the surface of the resist layer to obtain a substrate with a resist cured layer, and then the substrate is cut into pieces of 20 mm ⁇ 20 mm.
- This substrate sample is subjected to dry etching by ion sputtering to form a resist cured layer on the surface of the resist layer to obtain a substrate with a resist cured layer, and then the substrate is cut into pieces of 20 mm ⁇ 20 mm. was used as a substrate sample for evaluation.
- Example 1 Preparation of Semiconductor Surface Treatment Agent Composition (1) of the Present Invention
- a solution of 4.74 g water and 1.29 g sodium alkylsulfosuccinate (Neocol P; manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) Tube yellow fluorescent lamp, FLR40SY-IC / M; manufactured by Mitsubishi Electric OSRAM Co., Ltd.) 0.06 g of ammonium fluoride and 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1 0.5 g (Irgacure 369; manufactured by Ciba Specialty Chemicals) was added and stirred at room temperature.
- sodium alkylsulfosuccinate Naeocol P; manufactured by Daiichi Kogyo Seiyaku Co., Ltd.
- Tube yellow fluorescent lamp, FLR40SY-IC / M manufactured by Mitsubishi Electric OSRAM Co., Ltd.
- a composition (1) of the present invention having a pH of 2 was prepared.
- Examples 2 to 18 Preparation of Semiconductor Surface Treatment Agent Compositions (2) to (18) of the Present Invention
- the components shown in Tables 1 and 2 were used.
- Compositions (2) to (18) of the present invention were prepared in the same manner as in Example 1, except that the indicated amount was charged. These compositions are shown in Table 1 and Table 2 together with the composition of Example 1.
- the numerical value shown in Table 1 and Table 2 is the weight% concentration of each component when the total weight of the composition is 100%.
- Example 19 Evaluation of Semiconductor Surface Treatment Agent Composition (1) of the Present Invention 50 mL of the composition (1) of the present invention prepared in Example 1 was subjected to ultraviolet irradiation apparatus (UV irradiation apparatus, MUV-35U MUV) at room temperature. The substrate sample for evaluation was immersed for 3 minutes under gentle stirring while irradiating light with a central wavelength of 320 nm using a PF001 filter (manufactured by Moritex Co., Ltd.). Thereafter, the substrate was rinsed with pure water for 30 seconds, and the substrate surface was dried with compressed air.
- UV irradiation apparatus MUV-35U MUV
- compositions (2) to (18) of the present invention were the same as in Example 19.
- the method was immersed for a predetermined time, and the peeling performance of the resist layer, the resist cured layer and the antireflection film layer was visually observed and observed with a field emission scanning electron microscope (S-4800; manufactured by Hitachi High-Technologies Corporation). These results are shown in Table 3 together with the results of Example 19.
- various carbon radical generating compounds can be used as the carbon radical generating agent, and an azonitrile-based carbon radical generating agent, Carbon radical generators such as azoamide-based carbon radical generators, chain azoamidine-based carbon radical generators, cyclic azoamidine-based carbon radical generators, and azoester-based carbon radical generators suitably generate carbon radicals by heating. It was found that not only the antireflection film layer (BARC layer) but also the resist layer and the cured resist layer can be peeled well even when such a carbon radical generator is used to generate carbon radicals by light irradiation.
- BARC layer antireflection film layer
- resist layer and the cured resist layer can be peeled well even when such a carbon radical generator is used to generate carbon radicals by light irradiation.
- Example 26 using composition (8) of the present invention
- Example 19-25 and 27-36 acid was added to form hydrogen fluoride. It was found that the antireflection film layer (BARC layer) and the like can be peeled off in a short time by assisting the process and making the pH acidic at 4 or less.
- BARC layer antireflection film layer
- Example 37 Evaluation of Semiconductor Surface Treatment Agent Composition (15) of the Present Invention 50 mL of the composition (15) of the present invention prepared in Example 15 was preheated to 40 ° C. and heated for 10 minutes. The substrate sample for evaluation was immersed in this heated solution for 3 minutes under gentle stirring. In addition, heating was not performed during immersion. Thereafter, the substrate was rinsed with pure water for 30 seconds, and the substrate surface was dried with compressed air. When the substrate sample after drying was observed visually and with an electron emission scanning electron microscope (S-4800; manufactured by Hitachi High-Technologies Corporation), all of the resist layer, the resist cured layer, and the antireflection film layer were peeled off satisfactorily.
- S-4800 electron emission scanning electron microscope
- Example 37 when VA-601 which is a compound (thermal radical generator) that suitably generates carbon radicals by heating is used as the carbon radical generator, the carbon radicals are heated by heating instead of light irradiation. It was found that not only the antireflection film layer (BARC layer) but also the resist layer and the resist hardened layer can be peeled off satisfactorily by generating the above. Further, it was found that even when the solution (the semiconductor surface treating agent composition of the present invention) was heated in advance without performing any heating during the immersion, the same examination was performed and the film could be peeled off satisfactorily.
- the solution the semiconductor surface treating agent composition of the present invention
- Example 38 Evaluation of Copper Wiring Using Semiconductor Surface Treatment Agent Composition (6) of the Present Invention A 20 mm ⁇ 20 mm copper plate from which an oxide film was removed was immersed in a 0.1N sulfuric acid aqueous solution for 5 minutes. It was immersed in 50 mL of the solution of the composition (6) of the present invention prepared in 6 for 10 minutes at room temperature. Next, after removing the copper plate from the immersion liquid, the copper contained in the immersion liquid was quantified by flameless atomic absorption, and the etching rate was confirmed from the quantitative value. The value was 4.0 ⁇ 10 ⁇ 6 nm / Since it was min, it was confirmed that almost no copper was eluted in the immersion liquid. From this result, it was found that even when the semiconductor surface treating agent composition of the present invention was used for a semiconductor substrate provided with copper wiring, the copper wiring surface was not adversely affected.
- Example 38 when a radical generator that generates oxygen radicals such as hydrogen peroxide (oxygen radical generator) is used, an oxide film is formed on the copper surface.
- a radical generator that generates oxygen radicals such as hydrogen peroxide (oxygen radical generator)
- oxygen radical generator oxygen radical generator
- the composition of the present invention does not have such an adverse effect on the copper surface. From this result, for example, even when the semiconductor substrate has a multilayer copper wiring structure, the composition of the present invention does not adversely affect the surface of the copper layer. It was found that the layer and the cured resist layer can also be peeled well.
- Comparative Reference Composition (1) To 99.94 g of water, 0.06 g of ammonium fluoride was added and stirred at room temperature to prepare a comparative reference composition (1) having a pH of 6.
- Reference Example 6 Evaluation of Antireflective Film Layer Stripping Composition (2)
- Reference Example 6 the same composition as Reference Example 5 was used except that the antireflective film layer stripping composition (2) prepared in Reference Example 2 was used. Immersion was performed by the method, and peeling of the antireflection film layer was visually observed. As a result, in the case of using the antireflection film layer peeling composition (2), it was confirmed that the antireflection film layer was completely peeled after 3 minutes of immersion.
- Reference Example 7 Evaluation of Antireflection Film Layer Peeling Composition (3) 50 mL of the antireflection film layer peeling composition (3) prepared in Reference Example 3 was heated to 40 ° C. and heated for 10 minutes. A silicon substrate coated with only the antireflection film layer was immersed in this heated solution under gentle stirring, and peeling of the antireflection film layer during the immersion was visually observed. As a result, it was confirmed that the antireflection film layer was completely peeled after 3 minutes of immersion.
- Comparative Reference Composition (1) 50 mL of Comparative Reference Composition (1) prepared in Reference Example 4 was added to an ultraviolet irradiation apparatus (UV irradiation apparatus, MUV-35U MUV-PF001 filter at room temperature); Using a Moritex Co., Ltd.), irradiating light with a central wavelength of 320 nm, immersing a silicon substrate coated only with the antireflection film layer under gentle stirring, and visually detaching the antireflection film layer during immersion Observed at. However, the antireflection film layer could not be peeled at all even though the immersion was continued for 30 minutes.
- UV irradiation apparatus MUV-35U MUV-PF001 filter at room temperature
- the carbon radical generator is a composition using either a compound that suitably generates carbon radicals upon heating (thermal radical generator) or a compound that suitably generates carbon radicals upon irradiation with light (photo radical generator). Even if it exists, it turned out that an anti-reflective film layer can peel favorably. Further, from the results of Reference Examples 9 to 11, even with the antireflection film layer peeling composition containing the carbon radical generator, the antireflection film layer cannot be peeled off without heating or light irradiation. From this, it was found that carbon radicals generated from a carbon radical generator are necessary for peeling off the antireflection film layer.
- Examples 39 to 40 Preparation of Semiconductor Surface Treatment Agent Compositions (19) to (20) of the Present Invention
- ⁇ -butyrolactone which is an organic solvent in the composition of the present invention
- acetone or The semiconductor surface treating agent compositions (19) to (20) of the present invention were prepared in the same manner as in Example 1 except that the amounts shown in Table 5 were charged using dimethylformamide (DMF). These compositions are shown in Table 5.
- the numerical value shown in Table 5 is the weight% concentration of each component when the total weight of the composition is 100%.
- Examples 41 to 42 Evaluation of Semiconductor Surface Treatment Agent Compositions (19) to (20) of the Present Invention Prepared with the semiconductor surface treatment composition (19) of the present invention prepared in Example 39 and Example 40
- Each 50 mL of the semiconductor surface treating agent composition (20) of the present invention is used at room temperature at an ultraviolet irradiation device (with UV irradiation device, with MUV-35U MUV-PF001 filter; manufactured by Moritex Co., Ltd.) with a central wavelength of 320 nm.
- the substrate sample for evaluation was immersed for 30 minutes under gentle stirring while irradiating light.
- the resist layer and the cured resist layer could not be peeled off, and the antireflection film layer (BARC layer) under the resist layer could hardly be peeled off.
- the silicon substrate coated with only the antireflection film layer is immersed in the semiconductor surface treating agent compositions (19) to (20) of the present invention under the same conditions, the antireflection film layer is completely formed. It was confirmed that they were peeled off.
- the antireflection film layer can be peeled off if a compound that generates fluorine ions (fluoride ions) in water and a carbon radical generator are used in combination.
- the semiconductor surface treating agent compositions (19) to (20) of the present invention can sufficiently exhibit the effect when used for peeling only the antireflection film layer. It is difficult to exert its effect in peeling off the layer.
- Comparative Examples 1 to 3 Preparation of Comparative Compositions (1) to (3) Comparative Example 1 does not use hydroxylamine or / and a derivative thereof as a reducing agent, and Comparative Examples 2 to 3 use hydroxylamine or / and Comparative compositions (1) to (3) were prepared in the same manner as in Example 1 except that palmitic acid ascorbate was used as the reducing agent instead of the derivative and the amounts shown in Table 6 were charged. These compositions are shown in Table 6 together with the composition of Example 1. In addition, the numerical value shown in Table 6 is the weight% concentration of each component when the total weight of the composition is 100%.
- the comparative compositions (1) to (2) were immersed for a predetermined time in the same manner as in Example 19. Then, the peeling performance of the resist layer, the resist cured layer, and the antireflection film layer was observed visually and with a field emission scanning electron microscope (S-4800; manufactured by Hitachi High-Technologies Corporation). These results are shown in Table 7 together with the results of Example 19 using the composition (1) of the present invention.
- the comparative composition (3) prepared in Comparative Example 3 was excluded from the composition to be evaluated because palmitic acid ascorbate precipitated as a solid from the prepared solution.
- the antireflective film can be efficiently and efficiently further shortened by using hydroxylamine or / and its derivative as the reducing agent in the semiconductor surface treating agent composition of the present invention. It was found that the layer (BARC layer), the resist layer, and the resist cured layer can be peeled off. That is, in the evaluation using the comparative composition (1) that does not use a reducing agent (Comparative Examples 4 and 5), since the resist cured layer was hardly peeled off in 3 minutes of immersion, the resist layer or It was found that peeling of the antireflection film layers did not proceed, and these layers were finally peeled off at about 60% to 90% after 60 minutes of immersion.
- Example 2 Although the thing with the same composition ratio as Example 1 was prepared using the ascorbyl palmityl as a reducing agent instead of hydroxylamine or / and its derivative (comparative example 3), ascorbyl palmityl precipitated as a solid. As a result, the composition ratio cannot be changed widely, and even if evaluation is performed using a composition with a similar composition ratio (Comparative Example 2), these layers are 90% unless immersed for 5 minutes. It was found that it was not possible to peel off at% or more. On the other hand, in Example 19, since these layers could be peeled well after immersion for only 3 minutes, it was possible to peel these layers efficiently in a very short time by using hydroxylamine or / and as a reducing agent. It was found that this was due to the selection of the derivative.
- the semiconductor substrate surface having the antireflection film layer and the resist layer is treated with the semiconductor surface treating agent composition of the present invention, it can be expected that these layers can be efficiently peeled off in a short time. Even if the semiconductor substrate is a semiconductor substrate on which copper wiring such as a multilayer copper wiring structure is laid, for example, it can be expected that the above layers can be efficiently peeled without adversely affecting the copper wiring.
- the semiconductor surface treating agent composition of the present invention enables the peeling of the above layer in a shorter time if it is acidic, the lower layer of the treating layer affects the alkali such as a low-k film. Even in the case of an insulating film that is easily affected, it can be expected that the layer can be peeled efficiently without affecting the insulating film.
- the semiconductor surface treating agent composition of the present invention can peel off both the antireflection film layer in the manufacturing process of a semiconductor element and the like, as well as both layers of the resist layer applied thereon, in a short time and efficiently.
- the cured resist layer can be peeled off during the etching process.
- the semiconductor surface treating agent composition of the present invention is applied to the semiconductor substrate having these configurations. It can be used suitably.
- the semiconductor surface treatment method of the present invention has been conventionally performed because it is a method capable of easily and quickly removing not only the antireflection film layer but also the resist layer and the resist cured layer at the same time. Further, these processing layers can be peeled off without performing a complicated process such as an ashing process.
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Abstract
Description
(式中、R1は炭素数1~6の直鎖状、分枝状若しくは環状のアルキル基又は1~3のヒドロキシル基を有する炭素数1~4の直鎖状若しくは分枝状の置換アルキル基を表し、R2は水素原子、炭素数1~6の直鎖状、分枝状若しくは環状のアルキル基又は1~3のヒドロキシル基を有する炭素数1~4の直鎖状若しくは分枝状の置換アルキル基を表す。)で示されるヒドロキシルアミン誘導体からなる群より選ばれる少なくとも1種の化合物を含有することを特徴とする半導体表面用処理剤組成物の発明である。
水4.74g及びアルキルスルホコハク酸ナトリウム(ネオコールP;第一工業製薬株式会社製)1.29gの溶液に、イエローランプ(直管イエロー蛍光ランプ,FLR40SY-IC/M;三菱電機オスラム株式会社製)の照射下、フッ化アンモニウム0.06g及び2-ベンジル-2-ジメチルアミノ-1-(4-モルホリノフェニル)-ブタノン-1(イルガキュア369;チバ・スペシャルティ・ケミカルズ社製)0.5gを加え、室温で攪拌した。フッ化アンモニウム及びイルガキュア369の溶解を確認した後、攪拌を続けながら、その溶液にγ-ブチロラクトン93gを加え、更に、ジエチルヒドロキシルアミン0.01gを加えた後、クエン酸0.4gを加えて、pH2の本発明の組成物(1)を調製した。
実施例2~18では、表1及び表2に示す各成分を用いて、表1及び表2に示す量を仕込んだ以外は、実施例1と同様にして、本発明の組成物(2)~(18)を調製した。これらの組成を実施例1の組成と併せて表1及び表2に示す。なお、表1及び表2に示す数値は、組成物の総重量を100%とした場合における各成分の重量%濃度である。
実施例1で調製した本発明の組成物(1)50mLに、室温中、紫外線照射装置(UV照射装置,MUV-35U MUV-PF001フィルター付き;株式会社モリテックス製)を用い、中心波長320nmの光を照射しながら、ゆるやかな攪拌下、上記評価用基板サンプルを3分間浸漬した。その後、純水で30秒間リンスし、基板表面を圧縮空気で乾燥した。乾燥後の基板サンプルを目視及び電解放出型走査電子顕微鏡(S-4800;株式会社日立ハイテクノロジーズ製)で観察したところ、レジスト層及びレジスト硬化層については残渣もなく良好に剥離できており、反射防止膜層については、その90%以上が剥離できていることを確認した。その結果、評価用基板サンプルを、光照射しながら本発明の組成物中に攪拌下3分間浸漬すれば、反射防止膜層(BARC層)のみならず、レジスト層やレジスト硬化層をも同時に剥離できることが判った。
実施例20~36では、本発明の組成物(2)~(18)について実施例19と同様の方法により、所定の時間浸漬を行って、レジスト層、レジスト硬化層及び反射防止膜層の剥離性能を目視及び電解放出型走査電子顕微鏡(S-4800;株式会社日立ハイテクノロジーズ製)で観察した。これらの結果を実施例19の結果と併せて表3に示す。
実施例15で調製した本発明の組成物(15)50mLを予め40℃に加温し、10分間加熱した。この加熱した溶液に、上記評価用基板サンプルを、ゆるやかな攪拌下、3分間浸漬した。なお、浸漬の間は加熱を行わなかった。その後、純水で30秒間リンスし、基板表面を圧縮空気で乾燥した。乾燥後の基板サンプルを目視及び電解放出型走査電子顕微鏡(S-4800;株式会社日立ハイテクノロジーズ製)で観察したところ、レジスト層、レジスト硬化層及び反射防止膜層のすべてが良好に剥離できていることが確認できた。その結果、評価用基板サンプルを、予め加熱した本発明の組成物中に攪拌下3分間浸漬すれば、反射防止膜層(BARC層)のみならず、レジスト層やレジスト硬化層をも同時に剥離できることが判った。
0.1Nの硫酸水溶液に5分間浸漬して、酸化被膜を除去した20mm×20mmの銅板を、実施例6で調製した本発明の組成物(6)の溶液50mLに、室温で10分間浸漬した。次いで、銅板を浸漬液から取り出した後、浸漬液中に含まれる銅をフレームレス原子吸光法により定量し、定量値からエッチングレートを確認したところ、その値は4.0×10-6nm/minであったことから、浸漬液中に殆ど銅は溶出していないことが確認された。この結果から、本発明の半導体表面用処理剤組成物を、銅配線が施された半導体基板に用いても、銅配線表面には悪影響を及ぼさないことが判った。
水99.44gに、イエローランプ(直管イエロー蛍光ランプ,FLR40SY-IC/M;三菱電機オスラム株式会社製)の照射下、フッ化アンモニウム0.06g及び2-ベンジル-2-ジメチルアミノ-1-(4-モルホリノフェニル)-ブタノン-1(イルガキュア369;チバ・スペシャルティ・ケミカルズ社製)0.5gを加え、室温で攪拌して、pH6の反射防止膜層剥離用組成物(1)を調製した。
参考例2~3では、表4に示す各成分を用いて、表4に示す量を仕込んだ以外は、参考例1と同様にして、反射防止膜層剥離用組成物(2)~(3)を調製した。これらの組成を参考例1の組成と併せて表4に示す。なお、表4に示す数値は、組成物の総重量を100%とした場合における各成分の重量%濃度である。
水99.94gに、フッ化アンモニウム0.06gを加え、室温で攪拌して、pH6の比較参考用組成物(1)を調製した。
参考例1で調製した反射防止膜層剥離用組成物(1)50mLに、室温中、紫外線照射装置(UV照射装置,MUV-35U MUV-PF001フィルター付き;株式会社モリテックス製)を用い、中心波長320nmの光を照射しながら、ゆるやかな攪拌下、反射防止膜層のみが塗布されたシリコン基板を浸漬し、浸漬中での反射防止膜層の剥離を目視で観察した。その結果、浸漬3分後には、反射防止膜層の剥離が確認でき、浸漬15分後では、反射防止膜層が完全に剥離されていることが確認された。
参考例6では、参考例2で調製した反射防止膜層剥離用組成物(2)を用いた以外は、参考例5と同様の方法により浸漬を行って、反射防止膜層の剥離を目視観察した。その結果、反射防止膜層剥離用組成物(2)を用いた場合は、浸漬3分後には、反射防止膜層が完全に剥離されていることが確認された。
参考例3で調製した反射防止膜層剥離用組成物(3)50mLを40℃に加温し、10分間加熱した。この加熱した溶液に、反射防止膜層のみが塗布されたシリコン基板を、ゆるやかな攪拌下浸漬を行い、浸漬中での反射防止膜層の剥離を目視で観察した。その結果、浸漬3分後には、反射防止膜層が完全に剥離されていることが確認された。
参考例4で調製した比較参考用組成物(1)50mLに、室温中、紫外線照射装置(UV照射装置,MUV-35U MUV-PF001フィルター付き;株式会社モリテックス製)を用い、中心波長320nmの光を照射しながら、ゆるやかな攪拌下、反射防止膜層のみが塗布されたシリコン基板を浸漬し、浸漬中での反射防止膜層の剥離を目視で観察した。しかしながら、30分間も浸漬し続けたのにもかかわらず、反射防止膜層がまったく剥離できなかった。
参考例1及び2で調製した反射防止膜層剥離用組成物(1)~(2)の各々50mLに、室温中、紫外線を照射せずに、ゆるやかな攪拌下、反射防止膜層のみが塗布されたシリコン基板を浸漬し、浸漬中での反射防止膜層の剥離を目視で観察した。しかしながら、30分間も浸漬し続けたのにもかかわらず、反射防止膜層がまったく剥離できなかった。
参考例3で調製した反射防止膜層剥離用組成物(3)50mLに、加熱をせずに室温中で、ゆるやかな攪拌下、反射防止膜層のみが塗布されたシリコン基板を浸漬し、浸漬中での反射防止膜層の剥離を目視で観察した。しかしながら、30分間も浸漬し続けたのにもかかわらず、反射防止膜層がまったく剥離できなかった。
実施例39~40では、本発明の組成物における有機溶剤であるγ-ブチロラクトンの代わりに、アセトン又はジメチルホルムアミド(DMF)を用いて、表5に示す量を仕込んだ以外は、実施例1と同様にして、本発明の半導体表面用処理剤組成物(19)~(20)を調製した。これらの組成を表5に示す。なお、表5に示す数値は、組成物の総重量を100%とした場合における各成分の重量%濃度である。
実施例39で調製した本発明の半導体表面用処理剤組成物(19)及び実施例40で調製した本発明の半導体表面用処理剤組成物(20)の各々50mLに、室温中、紫外線照射装置(UV照射装置,MUV-35U MUV-PF001フィルター付き;株式会社モリテックス製)を用い、中心波長320nmの光を照射しながら、ゆるやかな攪拌下、上記評価用基板サンプルを30分間浸漬した。しかしながら、30分間も浸漬し続けたのにもかかわらず、レジスト層及びレジスト硬化層が剥離できず、その下部にある反射防止膜層(BARC層)もほとんど剥離できなかった。なお、反射防止膜層のみが塗布されたシリコン基板を、同条件下、上記本発明の半導体表面用処理剤組成物(19)~(20)に浸漬した場合には、反射防止膜層が完全に剥離されていることが確認された。
比較例1では、還元剤であるヒドロキシルアミン又は/及びその誘導体を用いず、比較例2~3では、ヒドロキシルアミン又は/及びその誘導体の代わりにアスコルビン酸パルミチルを還元剤として用いて、表6に示す量を仕込んだ以外は、実施例1と同様にして、比較用組成物(1)~(3)を調製した。これらの組成を実施例1の組成と併せて表6に示す。なお、表6に示す数値は、組成物の総重量を100%とした場合における各成分の重量%濃度である。
比較例4~6では、比較用組成物(1)~(2)について実施例19と同様の方法により、所定の時間浸漬を行って、レジスト層、レジスト硬化層及び反射防止膜層の剥離性能を目視及び電解放出型走査電子顕微鏡(S-4800;株式会社日立ハイテクノロジーズ製)で観察した。これらの結果を本発明の組成物(1)を用いた実施例19の結果と併せて表7に示す。なお、比較例3で調製した比較用組成物(3)は、調製後の溶液からアスコルビン酸パルミチルが固体として析出してしまったため、評価対象の組成物から除外した。
Claims (24)
- 〔I〕水中でフッ素イオンを発生する化合物、〔II〕炭素ラジカル発生剤、〔III〕水、〔IV〕有機溶剤、並びに〔V〕ヒドロキシルアミン及び一般式[1]
(式中、R1は炭素数1~6の直鎖状、分枝状若しくは環状のアルキル基又は1~3のヒドロキシル基を有する炭素数1~4の直鎖状若しくは分枝状の置換アルキル基を表し、R2は水素原子、炭素数1~6の直鎖状、分枝状若しくは環状のアルキル基又は1~3のヒドロキシル基を有する炭素数1~4の直鎖状若しくは分枝状の置換アルキル基を表す。)で示されるヒドロキシルアミン誘導体からなる群より選ばれる少なくとも1種の化合物を含有することを特徴とする半導体表面用処理剤組成物。 - 更に〔VI〕酸を含有することを特徴とする請求項1に記載の組成物。
- 更に〔VII〕界面活性剤を含有することを特徴とする請求項1に記載の組成物。
- 前記半導体表面用処理剤が、反射防止膜層剥離用である請求項1に記載の組成物。
- 前記半導体表面用処理剤が、BARC層剥離用である請求項1に記載の組成物。
- 前記半導体表面用処理剤が、反射防止膜層及びレジスト層剥離用である請求項1に記載の組成物。
- 前記半導体表面用処理剤が、BARC層及びレジスト層剥離用である請求項1に記載の組成物。
- 前記〔I〕水中でフッ素イオンを発生する化合物が、フッ化水素と無機非金属の塩基との塩である請求項1に記載の組成物。
- 前記フッ化水素と無機非金属の塩基との塩が、フッ化アンモニウムである請求項8に記載の組成物。
- 前記〔II〕炭素ラジカル発生剤が、波長200~750nmの光照射によって炭素ラジカルを発生する化合物である請求項1に記載の組成物。
- 前記〔IV〕有機溶剤が、アルコール系、エステル系、アミド系及びスルホキシド系の有機溶剤からなる群より選ばれる少なくとも1種のものであって、選ばれた各々の有機溶剤自体の双極子モーメントが1.5~7.5debyeであり、かつ選ばれた各々の有機溶剤自体の比重が0.7~1.2の範囲のものである請求項1に記載の組成物。
- 前記〔IV〕有機溶剤が、イソプロパノール、γ-ブチロラクトン及びN-メチルピロリドンからなる群より選ばれる少なくとも1種のものである請求項1に記載の組成物。
- 前記〔V〕ヒドロキシルアミン及び一般式[1]で示されるヒドロキシルアミン誘導体からなる群より選ばれる少なくとも1種の化合物が、モノ又はジエチルヒドロキシルアミン、モノ又はビス(2,2-ジヒドロキシエチル)ヒドロキシルアミン及びモノ又はビス(2,3-ジヒドロキシ-n-プロピル)-1-ヒドロキシルアミンからなる群より選ばれる少なくとも1種のものである請求項1に記載の組成物。
- 前記〔V〕ヒドロキシルアミン及び一般式[1]で示されるヒドロキシルアミン誘導体からなる群より選ばれる少なくとも1種の化合物が、ジエチルヒドロキシルアミン、ビス(2,2-ジヒドロキシエチル)ヒドロキシルアミン及びビス(2,3-ジヒドロキシ-n-プロピル)-1-ヒドロキシルアミンからなる群より選ばれる少なくとも1種のものである請求項1に記載の組成物。
- 前記〔VI〕酸が、脂肪族ジカルボン酸又はその塩、脂肪族ヒドロキシカルボン酸又はその塩、芳香族ジカルボン酸又はその塩及び芳香族ヒドロキシカルボン酸からなる群より選ばれる少なくとも1種のものである請求項2に記載の組成物。
- 前記脂肪族ジカルボン酸又はその塩、脂肪族ヒドロキシカルボン酸又はその塩、芳香族ジカルボン酸又はその塩及び芳香族ヒドロキシカルボン酸からなる群より選ばれる少なくとも1種のものが、シュウ酸、シュウ酸-1ナトリウム、シュウ酸-1カリウム、シュウ酸-1アンモニウム、マロン酸、マロン酸-1ナトリウム、マロン酸-1カリウム、マロン酸-1アンモニウム、コハク酸、コハク酸-1ナトリウム、コハク酸-1カリウム、コハク酸-1アンモニウム、グルタル酸、グルタル酸-1ナトリウム、グルタル酸-1カリウム、グルタル酸-1アンモニウム、アジピン酸、アジピン酸-1ナトリウム、アジピン酸-1カリウム、アジピン酸-1アンモニウム、ピメリン酸、ピメリン酸-1ナトリウム、ピメリン酸-1カリウム、ピメリン酸-1アンモニウム、マレイン酸、マレイン酸-1ナトリウム、マレイン酸-1カリウム、マレイン酸-1アンモニウム、フマル酸、フマル酸-1ナトリウム、フマル酸-1カリウム、フマル酸-1アンモニウム、リンゴ酸、リンゴ酸-1ナトリウム、リンゴ酸-1カリウム、リンゴ酸-1アンモニウム、酒石酸、酒石酸-1ナトリウム、酒石酸-1カリウム、酒石酸-1アンモニウム、クエン酸、クエン酸-1ナトリウム、クエン酸-2ナトリウム、クエン酸-1カリウム、クエン酸-2カリウム、クエン酸-1アンモニウム、クエン酸-2アンモニウム、フタル酸、フタル酸-1ナトリウム、フタル酸-1カリウム及びフタル酸-1アンモニウムからなる群より選ばれる少なくとも1種のものである請求項15に記載の組成物。
- 前記脂肪族ジカルボン酸又はその塩、脂肪族ヒドロキシカルボン酸又はその塩、芳香族ジカルボン酸又はその塩及び芳香族ヒドロキシカルボン酸からなる群より選ばれる少なくとも1種のものが、シュウ酸、シュウ酸-1ナトリウム、シュウ酸-1カリウム、シュウ酸-1アンモニウム、リンゴ酸、リンゴ酸-1ナトリウム、リンゴ酸-1カリウム、リンゴ酸-1アンモニウム、酒石酸、酒石酸-1ナトリウム、酒石酸-1カリウム、酒石酸-1アンモニウム、クエン酸、クエン酸-1ナトリウム、クエン酸-2ナトリウム、クエン酸-1カリウム、クエン酸-2カリウム、クエン酸-1アンモニウム及びクエン酸-2アンモニウムからなる群より選ばれる少なくとも1種のものである請求項15に記載の組成物。
- 前記半導体表面用処理剤が反射防止膜層剥離用であって、当該反射防止膜層の下層がLow-k膜であり、前記半導体表面用処理剤のpHが7以下である請求項1に記載の組成物。
- 前記半導体表面用処理剤が反射防止膜層及びレジスト層剥離用であって、当該反射防止膜層の下層がLow-k膜であり、前記半導体表面用処理剤のpHが7以下である請求項1に記載の組成物。
- 前記半導体表面用処理剤が反射防止膜層剥離用であって、当該反射防止膜層の下層がLow-k膜であり、前記半導体表面用処理剤のpHが1~4の範囲である請求項2に記載の組成物。
- 前記半導体表面用処理剤が反射防止膜層及びレジスト層剥離用であって、当該反射防止膜層の下層がLow-k膜であり、前記半導体表面用処理剤のpHが1~4の範囲である請求項2に記載の組成物。
- 前記〔I〕水中でフッ素イオンを発生する化合物の重量%が0.01~5重量%、前記〔II〕炭素ラジカル発生剤の重量%が0.05~10重量%、前記〔III〕水の重量%が0.02~10重量%、前記〔IV〕有機溶剤の重量%が80~99重量%、前記〔V〕ヒドロキシルアミン及び一般式[1]で示されるヒドロキシルアミン誘導体からなる群より選ばれる少なくとも1種の化合物の重量%が0.001~5重量%、前記〔VI〕酸の重量%が0.1~5重量%、並びに前記〔VII〕界面活性剤の重量%が0.05~5重量%である請求項3に記載の組成物。
- 多層銅配線構造の半導体基板に使用するものである請求項1に記載の組成物。
- 請求項1に記載の組成物を用いることを特徴とする半導体表面の処理方法。
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SG2012014940A SG178611A1 (en) | 2009-09-02 | 2010-09-01 | Processing agent composition for semiconductor surface and method for processing semiconductor surface using same |
US13/393,981 US9034810B2 (en) | 2009-09-02 | 2010-09-01 | Processing agent composition for semiconductor surface and method for processing semiconductor surface using same |
JP2011529911A JP5652399B2 (ja) | 2009-09-02 | 2010-09-01 | 半導体表面用処理剤組成物及びそれを用いた半導体表面の処理方法 |
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JP7365427B2 (ja) | 2019-11-22 | 2023-10-19 | 富士フイルム株式会社 | 洗浄液、洗浄方法 |
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JPWO2021153122A1 (ja) * | 2020-01-28 | 2021-08-05 | ||
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TWI818297B (zh) * | 2020-08-31 | 2023-10-11 | 日商斯庫林集團股份有限公司 | 基板處理方法及基板處理裝置 |
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WO2024095926A1 (ja) * | 2022-10-31 | 2024-05-10 | 東京応化工業株式会社 | 洗浄液、及び基板の洗浄方法 |
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IL218408A0 (en) | 2012-04-30 |
EP2475000B1 (en) | 2015-07-01 |
US9034810B2 (en) | 2015-05-19 |
TW201128328A (en) | 2011-08-16 |
JPWO2011027772A1 (ja) | 2013-02-04 |
CN102484057B (zh) | 2015-10-14 |
SG178611A1 (en) | 2012-03-29 |
US20120157368A1 (en) | 2012-06-21 |
CN102484057A (zh) | 2012-05-30 |
EP2475000A4 (en) | 2013-03-27 |
JP5652399B2 (ja) | 2015-01-14 |
KR20120073228A (ko) | 2012-07-04 |
EP2475000A1 (en) | 2012-07-11 |
SG10201405260YA (en) | 2014-10-30 |
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