WO2011022189A3 - Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites - Google Patents

Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites Download PDF

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Publication number
WO2011022189A3
WO2011022189A3 PCT/US2010/043847 US2010043847W WO2011022189A3 WO 2011022189 A3 WO2011022189 A3 WO 2011022189A3 US 2010043847 W US2010043847 W US 2010043847W WO 2011022189 A3 WO2011022189 A3 WO 2011022189A3
Authority
WO
WIPO (PCT)
Prior art keywords
bismuth telluride
nanoparticles
antimony
silver
composites
Prior art date
Application number
PCT/US2010/043847
Other languages
French (fr)
Other versions
WO2011022189A2 (en
Inventor
Arup Purkayastha
Purushottam Joshi
Original Assignee
Laird Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laird Technologies, Inc. filed Critical Laird Technologies, Inc.
Priority to KR1020127006834A priority Critical patent/KR101409505B1/en
Publication of WO2011022189A2 publication Critical patent/WO2011022189A2/en
Publication of WO2011022189A3 publication Critical patent/WO2011022189A3/en
Priority to US13/398,274 priority patent/US8748726B2/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/40—Particle morphology extending in three dimensions prism-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Abstract

According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.
PCT/US2010/043847 2009-08-17 2010-07-30 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites WO2011022189A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020127006834A KR101409505B1 (en) 2009-08-17 2010-07-30 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites
US13/398,274 US8748726B2 (en) 2009-08-17 2012-02-16 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN1888/MUM/2009 2009-08-17
IN1888MU2009 2009-08-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/398,274 Continuation US8748726B2 (en) 2009-08-17 2012-02-16 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites

Publications (2)

Publication Number Publication Date
WO2011022189A2 WO2011022189A2 (en) 2011-02-24
WO2011022189A3 true WO2011022189A3 (en) 2011-06-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/043847 WO2011022189A2 (en) 2009-08-17 2010-07-30 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites

Country Status (3)

Country Link
KR (1) KR101409505B1 (en)
TW (1) TW201118041A (en)
WO (1) WO2011022189A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8748726B2 (en) 2009-08-17 2014-06-10 Laird Technologies, Inc. Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites
US8691612B2 (en) 2010-12-10 2014-04-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of creating micro-scale silver telluride grains covered with bismuth nanoparticles
KR101286108B1 (en) 2011-04-11 2013-07-15 한국화학연구원 Manufacturing method of Te and bismuth telluride nano wire by solvothermal synthesis
KR101902925B1 (en) * 2011-08-03 2018-10-01 삼성전자주식회사 Thermoelectric material, thermoelectric element, and thermoelectric module
CN102569630B (en) * 2012-03-05 2016-01-06 中国科学院上海硅酸盐研究所 A kind of laminated inorganic compound/organic matter intercalation compound thermoelectric material and preparation method thereof
TWI491556B (en) * 2012-12-21 2015-07-11 Ind Tech Res Inst Thermoelectric material and method for manufacturing the same
KR102097063B1 (en) 2013-05-28 2020-04-06 삼성전자주식회사 Thermoelectric material, thermoelectric device and apparatus comprising same, and preparation method thereof
DE102013108791B3 (en) 2013-08-14 2014-12-11 O-Flexx Technologies Gmbh Method for depositing thermoelectric material
KR101631858B1 (en) * 2014-06-24 2016-06-20 한국전기연구원 Thermoelectric telluride materials formed complex-crystalline structure by interstitial doping
TWI589039B (en) * 2016-01-22 2017-06-21 中國鋼鐵股份有限公司 N-type bismuth telluride based thermoelectric composite and method for manufacturing the same
TWI641167B (en) * 2016-12-21 2018-11-11 中國鋼鐵股份有限公司 Thermoelectric module
KR102372437B1 (en) * 2017-11-01 2022-03-08 한국전기연구원 A2b3 based thermoelectric materials having nano structured hexagonal plate-type and manufacturing method the same
TWI683910B (en) 2018-10-18 2020-02-01 國立中山大學 Thermoelectric alloy, method for producing the same and thermoelectric alloy composite
CN109659425B (en) * 2018-12-29 2020-07-10 昆明理工大学 Bismuth-based thermoelectric material with doping effect improved by using barrier layer and preparation method thereof
CN111435698A (en) * 2019-01-14 2020-07-21 中国科学院宁波材料技术与工程研究所 Bismuth telluride-based thermoelectric material and preparation method thereof
CN112531097B (en) * 2020-11-13 2023-10-10 深圳热电新能源科技有限公司 n-type bismuth telluride-based thermoelectric material and preparation method thereof
CN114618534B (en) * 2022-04-18 2024-02-20 合肥工业大学 Visible light responsive sulfur-doped bismuth telluride nanowire photocatalytic material and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098393B2 (en) * 2001-05-18 2006-08-29 California Institute Of Technology Thermoelectric device with multiple, nanometer scale, elements
JP2007281070A (en) * 2006-04-04 2007-10-25 Denso Corp Thermoelectric transducer, and its manufacturing method
JP2008147625A (en) * 2006-10-13 2008-06-26 Toyota Motor Engineering & Manufacturing North America Inc Homogeneous thermoelectric nanocomposite material using core-shell nanoparticles
KR20080104455A (en) * 2007-05-28 2008-12-03 연세대학교 산학협력단 Method for manufacturing nanowire by using stress-induced growth

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4000023B2 (en) 2002-08-07 2007-10-31 北川工業株式会社 Thermoelectric material molded body and method for producing thermoelectric material molded body

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098393B2 (en) * 2001-05-18 2006-08-29 California Institute Of Technology Thermoelectric device with multiple, nanometer scale, elements
JP2007281070A (en) * 2006-04-04 2007-10-25 Denso Corp Thermoelectric transducer, and its manufacturing method
JP2008147625A (en) * 2006-10-13 2008-06-26 Toyota Motor Engineering & Manufacturing North America Inc Homogeneous thermoelectric nanocomposite material using core-shell nanoparticles
KR20080104455A (en) * 2007-05-28 2008-12-03 연세대학교 산학협력단 Method for manufacturing nanowire by using stress-induced growth

Also Published As

Publication number Publication date
TW201118041A (en) 2011-06-01
KR20120064680A (en) 2012-06-19
KR101409505B1 (en) 2014-06-25
WO2011022189A2 (en) 2011-02-24

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