WO2011021774A3 - 반도체 광소자 및 그 제조방법 - Google Patents

반도체 광소자 및 그 제조방법 Download PDF

Info

Publication number
WO2011021774A3
WO2011021774A3 PCT/KR2010/004543 KR2010004543W WO2011021774A3 WO 2011021774 A3 WO2011021774 A3 WO 2011021774A3 KR 2010004543 W KR2010004543 W KR 2010004543W WO 2011021774 A3 WO2011021774 A3 WO 2011021774A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
semiconductor device
optical semiconductor
manufacturing same
layer
Prior art date
Application number
PCT/KR2010/004543
Other languages
English (en)
French (fr)
Other versions
WO2011021774A2 (ko
Inventor
윤강식
Original Assignee
Youn Kang-Sik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Youn Kang-Sik filed Critical Youn Kang-Sik
Publication of WO2011021774A2 publication Critical patent/WO2011021774A2/ko
Publication of WO2011021774A3 publication Critical patent/WO2011021774A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 베이스 기판에 형성된 제1 반도체층; 상기 제1 반도체층과 대향하는 제2 반도체층; 및 상기 제1 반도체층과 제2 반도체층 사이에 형성된 활성층;을 포함하고, 상기 활성층 및 제2 반도체층의 측면 둘레 방향으로 돌출부와 요입부가 반복되는 요철 구조가 형성된 것을 특징으로 하는 반도체 광소자를 개시한다.
PCT/KR2010/004543 2009-08-20 2010-07-13 반도체 광소자 및 그 제조방법 WO2011021774A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090077269A KR20110019643A (ko) 2009-08-20 2009-08-20 반도체 광소자 및 그 제조방법
KR10-2009-0077269 2009-08-20

Publications (2)

Publication Number Publication Date
WO2011021774A2 WO2011021774A2 (ko) 2011-02-24
WO2011021774A3 true WO2011021774A3 (ko) 2011-04-14

Family

ID=43607420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004543 WO2011021774A2 (ko) 2009-08-20 2010-07-13 반도체 광소자 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR20110019643A (ko)
WO (1) WO2011021774A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111656542B (zh) * 2018-07-05 2023-06-13 世迈克琉明有限公司 半导体发光元件及其制造方法
TWI837842B (zh) * 2022-09-23 2024-04-01 友達光電股份有限公司 發光元件及其製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299494A (ja) * 1999-04-15 2000-10-24 Rohm Co Ltd 半導体発光素子の製法
JP2004006662A (ja) * 2002-03-28 2004-01-08 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子
KR20050049730A (ko) * 2003-11-24 2005-05-27 엘지이노텍 주식회사 반도체 발광소자
JP2006173534A (ja) * 2004-12-20 2006-06-29 Toyoda Gosei Co Ltd 発光装置
JP2006287026A (ja) * 2005-04-01 2006-10-19 Toyoda Gosei Co Ltd 発光素子およびこれを用いた発光装置
JP2007234707A (ja) * 2006-02-28 2007-09-13 Rohm Co Ltd 半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299494A (ja) * 1999-04-15 2000-10-24 Rohm Co Ltd 半導体発光素子の製法
JP2004006662A (ja) * 2002-03-28 2004-01-08 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子
KR20050049730A (ko) * 2003-11-24 2005-05-27 엘지이노텍 주식회사 반도체 발광소자
JP2006173534A (ja) * 2004-12-20 2006-06-29 Toyoda Gosei Co Ltd 発光装置
JP2006287026A (ja) * 2005-04-01 2006-10-19 Toyoda Gosei Co Ltd 発光素子およびこれを用いた発光装置
JP2007234707A (ja) * 2006-02-28 2007-09-13 Rohm Co Ltd 半導体発光素子

Also Published As

Publication number Publication date
KR20110019643A (ko) 2011-02-28
WO2011021774A2 (ko) 2011-02-24

Similar Documents

Publication Publication Date Title
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
WO2011090570A3 (en) Semiconductor package with embedded die and its methods of fabrication
WO2012138903A3 (en) Dual active layers for semiconductor devices and methods of manufacturing the same
WO2011075228A3 (en) Isolation for nanowire devices
WO2012087474A3 (en) A multi-chip package having a substrate with a plurality of vertically embedded die and a process of forming the same
EP3514836A3 (en) Gate contact structure over active gate and method to fabricate same
JP2011009723A5 (ko)
WO2011031431A3 (en) Semiconductor devices with field plates
WO2010095811A3 (ko) 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법
TW201130173A (en) Semiconductor light emitting device and method for manufacturing same
WO2013009007A3 (en) Optical member, display device having the same and method of fabricating the same
WO2009045082A3 (en) Light emitting device and method for fabricating the same
WO2009104899A3 (en) Method of etching asymmetric wafer, solar cell including the asymmetrically etched wafer, and method of manufacturing the same
EP2355175A3 (en) Light emitting device, method of manufacturing the same, light emitting device package and lighting system
EP2503603A3 (en) Light emitting device and method for manufacturing the same
WO2009031858A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2008156294A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2011129548A3 (en) Substrate assembly for crystal growth and fabricating method for light emitting device using the same
WO2009005017A1 (ja) 半導体パッケージおよびその製造方法
WO2012001478A3 (zh) 具有精密涂布之波长转换层之晶圆式发光装置
GB2529589A (en) Non-planar semiconductor device having self-aligned fin with top blocking layer
WO2009057620A1 (ja) 圧力センサ及びその製造方法
WO2012105800A3 (ko) 나노전력발전소자 및 이의 제조방법
WO2012087003A3 (en) Touch panel and method for manufacturing electrode member

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10810082

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10810082

Country of ref document: EP

Kind code of ref document: A2