WO2010142684A3 - Solar cell having a contact structure with low recombination losses, and method for the production of such solar cells - Google Patents

Solar cell having a contact structure with low recombination losses, and method for the production of such solar cells Download PDF

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Publication number
WO2010142684A3
WO2010142684A3 PCT/EP2010/058016 EP2010058016W WO2010142684A3 WO 2010142684 A3 WO2010142684 A3 WO 2010142684A3 EP 2010058016 W EP2010058016 W EP 2010058016W WO 2010142684 A3 WO2010142684 A3 WO 2010142684A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
solar cell
contact structure
substrate
semiconductor material
Prior art date
Application number
PCT/EP2010/058016
Other languages
German (de)
French (fr)
Other versions
WO2010142684A4 (en
WO2010142684A2 (en
Inventor
Nils-Peter Harder
Jan Schmidt
Rolf Brendel
Original Assignee
Institut für Solarenergieforschung
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Publication date
Application filed by Institut für Solarenergieforschung filed Critical Institut für Solarenergieforschung
Publication of WO2010142684A2 publication Critical patent/WO2010142684A2/en
Publication of WO2010142684A3 publication Critical patent/WO2010142684A3/en
Publication of WO2010142684A4 publication Critical patent/WO2010142684A4/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

A concept for a highly efficient solar cell, especially on the basis of high-quality crystalline silicon, as well as a method for producing such a solar cell are disclosed. In the solar cell (1), a contact structure (3) is formed using a layered stack arrangement that comprises a first layer (19) made of an electrically insulating material, a second layer (21) made of a semiconductor material, and a third layer (22) made of an electrically conductive material. The first (dielectric) layer is disposed between the substrate (17) and the second (semiconducting) layer (21) and is designed in such a way that a significant degree of charge carrier tunneling can occur between the substrate (17) and the second layer (21) through the first layer (19). The semiconductor material of the solar cell substrate and the semiconductor material of the second layer have different electrical properties as a result of different band structures such that the electron/hole selectivity of the tunneling process within the contact structure can be influenced, thus allowing the recombination losses caused by the contact structure to be significantly reduced.
PCT/EP2010/058016 2009-06-10 2010-06-08 Solar cell having a contact structure with low recombination losses, and method for the production of such solar cells WO2010142684A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009024598.7 2009-06-10
DE102009024598A DE102009024598A1 (en) 2009-06-10 2009-06-10 Solar cell with contact structure with low recombination losses as well as production process for such solar cells

Publications (3)

Publication Number Publication Date
WO2010142684A2 WO2010142684A2 (en) 2010-12-16
WO2010142684A3 true WO2010142684A3 (en) 2011-04-28
WO2010142684A4 WO2010142684A4 (en) 2011-07-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/058016 WO2010142684A2 (en) 2009-06-10 2010-06-08 Solar cell having a contact structure with low recombination losses, and method for the production of such solar cells

Country Status (2)

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DE (1) DE102009024598A1 (en)
WO (1) WO2010142684A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102223562B1 (en) * 2011-12-21 2021-03-04 선파워 코포레이션 Hybrid polysilicon heterojunction back contact cell
KR20140135881A (en) * 2013-05-16 2014-11-27 엘지전자 주식회사 Solar cell and method for manufacturing the same
DE112017006152T5 (en) * 2016-12-06 2019-08-22 The Australian National University solar cell production

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2034973A (en) * 1978-10-23 1980-06-11 Hezel R Solar cell with multi-layer insulation
US4315097A (en) * 1980-10-27 1982-02-09 Mcdonnell Douglas Corporation Back contacted MIS photovoltaic cell
EP0164090A2 (en) * 1984-06-05 1985-12-11 Telefunken Systemtechnik Gmbh Solar cell
EP1835548A1 (en) * 2004-12-27 2007-09-19 Naoetsu Electronics Co., Ltd. Back junction solar cell and process for producing the same
US20070256728A1 (en) * 2006-05-04 2007-11-08 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10142481A1 (en) * 2001-08-31 2003-03-27 Rudolf Hezel Solar cell and method for producing such
US7199395B2 (en) * 2003-09-24 2007-04-03 Sanyo Electric Co., Ltd. Photovoltaic cell and method of fabricating the same
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
DE102008045522A1 (en) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hetero-solar cell and process for the preparation of hetero-solar cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2034973A (en) * 1978-10-23 1980-06-11 Hezel R Solar cell with multi-layer insulation
US4315097A (en) * 1980-10-27 1982-02-09 Mcdonnell Douglas Corporation Back contacted MIS photovoltaic cell
EP0164090A2 (en) * 1984-06-05 1985-12-11 Telefunken Systemtechnik Gmbh Solar cell
EP1835548A1 (en) * 2004-12-27 2007-09-19 Naoetsu Electronics Co., Ltd. Back junction solar cell and process for producing the same
US20070256728A1 (en) * 2006-05-04 2007-11-08 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DESRUES T ET AL: "NEW PROCESS INTEGRATION FOR INTERDIGITATED BACK CONTACT (IBC) a-Si:H/c-Si HETEROJUNCTION SOLAR CELLS", 23RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE, 1-5 SEPTEMBER 2008, VALENCIA, SPAIN,, 5 September 2008 (2008-09-05), pages 1673 - 1676, XP002625075 *
HOEX B ET AL: "CRYSTALLINE SILICON SURFACE PASSIVATION BY THE NEGATIVE-CHARGE-DIELECTRIC AL2O3", 33RD IEEE SPECIALISTS CONFERENCE, SAN DIEGO, USA, 2008, 16 May 2008 (2008-05-16), XP002625074, ISBN: 978-1-4244-1640-0, DOI: 10.1109/PVSC.2008.4922635 *

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Publication number Publication date
WO2010142684A4 (en) 2011-07-21
DE102009024598A1 (en) 2011-01-05
WO2010142684A2 (en) 2010-12-16

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