WO2010130439A3 - Verfahren und vorrichtung zur herstellung eines photovoltaischen dünnschichtmoduls - Google Patents

Verfahren und vorrichtung zur herstellung eines photovoltaischen dünnschichtmoduls Download PDF

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Publication number
WO2010130439A3
WO2010130439A3 PCT/EP2010/002933 EP2010002933W WO2010130439A3 WO 2010130439 A3 WO2010130439 A3 WO 2010130439A3 EP 2010002933 W EP2010002933 W EP 2010002933W WO 2010130439 A3 WO2010130439 A3 WO 2010130439A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode layer
functional layers
forming
laser
film module
Prior art date
Application number
PCT/EP2010/002933
Other languages
English (en)
French (fr)
Other versions
WO2010130439A2 (de
Inventor
Hermann Wagner
Original Assignee
Schott Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Solar Ag filed Critical Schott Solar Ag
Priority to EP10722601A priority Critical patent/EP2430658A2/de
Priority to JP2012510165A priority patent/JP2012527102A/ja
Priority to US13/320,435 priority patent/US20120164782A1/en
Priority to CN2010800213794A priority patent/CN102422420A/zh
Publication of WO2010130439A2 publication Critical patent/WO2010130439A2/de
Publication of WO2010130439A3 publication Critical patent/WO2010130439A3/de

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)

Abstract

Bei einem photovoltaischen Dünnschichtmodul (1) mit einem Substrat (2), auf dem als Funktionsschichten eine transparente Frontelektrodenschicht (3), eine Halbleiterschicht (4) und eine Rückelektrodenschicht (5) abgeschieden sind, die zur Bildung serienverschalteter Zellen (C1, C2, C3) mit Zelltrennlinien (6, 7, 8) versehen sind, wird in dem Randbereich (10) ein Abtrag der Funktionsschichten (3 bis 5) mit einem Laser (23) durchgeführt und in dem Randbereich der Funktionsschichten (3 bis 5) eine Isolationstrennlinie (13) in die Funktionsschichten (3 bis 5) zur Isolation zwischen der Frontelektrodenschicht (3) und der Rückelektrodenschicht (5) mit einem Laser (24) zur Bildung einer Trennlinie (17) in der Frontelektrodenschicht (3) und mit einem Laser (25) zur Bildung einer Trennlinie (18, 19) in der Halbleiterschicht (4) und der Rückelektrodenschicht (5) gebildet. Der Abtrag der Funktionsschichten (3 bis 5) im Randbereich (10) des Moduls (1) und die Bildung der Isolationstrennschicht (13) wird gemeinsam in einem Schritt durchgeführt.
PCT/EP2010/002933 2009-05-14 2010-05-12 Verfahren und vorrichtung zur herstellung eines photovoltaischen dünnschichtmoduls WO2010130439A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP10722601A EP2430658A2 (de) 2009-05-14 2010-05-12 Verfahren und vorrichtung zur herstellung eines photovoltaischen dünnschichtmoduls
JP2012510165A JP2012527102A (ja) 2009-05-14 2010-05-12 太陽電池薄膜モジュールを製造するための方法及び装置
US13/320,435 US20120164782A1 (en) 2009-05-14 2010-05-12 Method and device for producing a photovoltaic thin-film module
CN2010800213794A CN102422420A (zh) 2009-05-14 2010-05-12 用于生产光伏薄膜模块的方法和装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009021273.6 2009-05-14
DE102009021273A DE102009021273A1 (de) 2009-05-14 2009-05-14 Verfahren und Vorrichtung zur Herstellung eines photovoltaischen Dünnschichtmoduls

Publications (2)

Publication Number Publication Date
WO2010130439A2 WO2010130439A2 (de) 2010-11-18
WO2010130439A3 true WO2010130439A3 (de) 2011-08-11

Family

ID=42979128

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/002933 WO2010130439A2 (de) 2009-05-14 2010-05-12 Verfahren und vorrichtung zur herstellung eines photovoltaischen dünnschichtmoduls

Country Status (6)

Country Link
US (1) US20120164782A1 (de)
EP (1) EP2430658A2 (de)
JP (1) JP2012527102A (de)
CN (1) CN102422420A (de)
DE (1) DE102009021273A1 (de)
WO (1) WO2010130439A2 (de)

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US20120015471A1 (en) * 2010-07-14 2012-01-19 Applied Materials, Inc. Multiple-path laser edge delete process for thin-film solar modules
CN102237442B (zh) * 2010-12-22 2013-06-05 保定天威集团有限公司 应用激光扫边机制作薄膜太阳能电池id的方法
CN102237441B (zh) * 2010-12-22 2013-04-17 保定天威集团有限公司 应用振镜激光设备实现太阳能薄膜电池组件的透光方法
DE102011075328A1 (de) * 2011-05-05 2012-11-08 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Vorrichtung und Verfahren zum Randentschichten und Kerben beschichteter Substrate
DE102011103481B4 (de) * 2011-06-03 2017-08-17 Leibniz-Institut für Oberflächenmodifizierung e.V. Selektives Abtragen dünner Schichten mittels gepulster Laserstrahlung zur Dünnschichtstrukturierung
US9024175B2 (en) * 2011-06-28 2015-05-05 Saint-Gobain Glass France Method for quickly stabilizing the nominal output of a thin-film solar module
CN102437205A (zh) * 2011-12-08 2012-05-02 常州天合光能有限公司 具有透明前电极的太阳能电池及其组件
MY171609A (en) * 2012-05-03 2019-10-21 Nexcis Laser etching a stack of thin layers for a connection of a photovoltaic cell
CN103413857B (zh) * 2013-05-17 2015-10-28 南昌大学 晶硅异质结太阳电池的前电极及电池片串接同步制作方法
CN104269449B (zh) * 2014-10-20 2017-02-01 上海空间电源研究所 一种硅基薄膜太阳电池及其子电池的隔离线刻蚀方法
DE102015121141B4 (de) * 2015-12-04 2020-06-04 Solibro Hi-Tech Gmbh Dünnschichtsolarmodul
JP2017117870A (ja) * 2015-12-22 2017-06-29 ソーラーフロンティア株式会社 太陽電池モジュール及びその製造方法

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JPS6189636A (ja) * 1984-10-08 1986-05-07 Semiconductor Energy Lab Co Ltd 光加工方法
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EP1005096A2 (de) * 1998-11-12 2000-05-31 Kaneka Corporation Solarzellenmodul
EP1020934A2 (de) * 1999-01-13 2000-07-19 Kaneka Corporation Laserbearbeitung von einer Dünnschicht
US20010037823A1 (en) * 1999-12-21 2001-11-08 Erik Middelman Process for manufacturing a thin film solar cell sheet with solar cells connected in series
US20080121627A1 (en) * 2004-06-18 2008-05-29 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots

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DATABASE WPI Week 198625, Derwent World Patents Index; AN 1986-158177 *

Also Published As

Publication number Publication date
WO2010130439A2 (de) 2010-11-18
US20120164782A1 (en) 2012-06-28
JP2012527102A (ja) 2012-11-01
EP2430658A2 (de) 2012-03-21
DE102009021273A1 (de) 2010-11-18
CN102422420A (zh) 2012-04-18

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