WO2010087213A1 - Correction position detecting apparatus, correction position detecting method and bonding apparatus - Google Patents
Correction position detecting apparatus, correction position detecting method and bonding apparatus Download PDFInfo
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- WO2010087213A1 WO2010087213A1 PCT/JP2010/050006 JP2010050006W WO2010087213A1 WO 2010087213 A1 WO2010087213 A1 WO 2010087213A1 JP 2010050006 W JP2010050006 W JP 2010050006W WO 2010087213 A1 WO2010087213 A1 WO 2010087213A1
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Definitions
- the present invention relates to a correction position detection apparatus, a correction position detection method, and a bonding apparatus that detect a correction position of a stacked semiconductor device in which a plurality of semiconductor dies are shifted and stacked in multiple stages.
- patterns for position detection are printed at the four corners of a semiconductor die, and bonding positions are corrected using this pattern (see, for example, Patent Document 1).
- the correction position detection apparatus for performing this correction the position coordinates of the pattern printed on the semiconductor die are registered by a prior teaching process. Then, when the semiconductor die is conveyed to the bonding table, the semiconductor die pattern is imaged with a high-magnification camera based on the registered position coordinates, and the correction position for the registered position information is determined based on the imaged pattern. Detected.
- the conventional correction position detection apparatus since the conventional correction position detection apparatus only performs correction position detection using a high-magnification camera, there is a problem that an adjacent pattern is erroneously recognized and a correction position is erroneously detected. In particular, this misdetection becomes more prominent when the deviation width of semiconductor dies stacked for higher density is shortened.
- an object of the present invention is to provide a correction position detection apparatus, a correction position detection method, and a bonding apparatus that can reduce erroneous detection of a correction position in a stacked semiconductor device.
- a correction position detection apparatus is a correction position detection apparatus that detects a correction position of a pattern in a stacked semiconductor device in which semiconductor dies on which a predetermined pattern is formed are stacked in a plurality of stages.
- a rough pattern is detected in which a pattern candidate that is a pattern candidate is detected based on an image captured by a low-magnification imaging unit that can capture an image, and a correction position is roughly detected based on the positional relationship between the pattern candidates and the positional relationship between registered positions.
- a main detection unit that detects a correction position from an image captured by a high-magnification imaging unit having a higher magnification than that of the low-magnification imaging unit based on the correction position roughly detected by the coarse detection unit.
- the coarse detection unit detects the pattern candidate based on the image captured by the low-magnification imaging unit, and the positional relationship between the pattern candidates and the positional relationship between the registered positions. Since the correction positions are roughly detected based on the correction positions, the correction positions can be appropriately ordered. Since the correction position is detected from the image captured by the high-magnification imaging unit based on the correction position roughly detected by the coarse detection unit, erroneous detection of the correction position can be reduced.
- the coarse detection means roughly detects the correction position based on the arrangement order of the pattern candidates and the arrangement order of the registered positions.
- the correction position is roughly detected based on the pattern candidate arrangement order and the registration position arrangement order, so that erroneous detection of the correction position can be appropriately reduced.
- the coarse detection means roughly detects the correction position along the deviation direction of the stacked semiconductor device.
- this correction position detection apparatus since a plurality of semiconductor dies are shifted and stacked in multiple stages, the positional relationship between adjacent patterns is detected by roughly detecting the correction position along the misalignment direction of the stacked semiconductor device. Can be easily identified, and the arrangement order of the correction positions can be identified with higher accuracy.
- the coarse detection means detects a pattern candidate from the image picked up by the low-magnification image pickup means by a matching process with a predetermined pattern model.
- the rough detection can be quickly performed by detecting the pattern candidate by the matching process with the pattern model.
- a correction position detection method is a correction position detection method for detecting a correction position of a pattern in a stacked semiconductor device in which semiconductor dies on which a predetermined pattern is formed are stacked in a plurality of stages.
- a rough pattern that detects a pattern candidate that is a pattern candidate based on an image captured by a low-magnification imaging apparatus that can capture images, and that roughly detects a correction position based on the positional relationship between the pattern candidates and the positional relationship between registered positions.
- the coarse detection step detects pattern candidates from the image captured by the low-magnification imaging means, and based on the positional relationship between the pattern candidates and the positional relationship between the registered positions. Since the correction positions are roughly detected, the correction positions can be appropriately ordered. Since the correction position is detected from the image captured by the high-magnification imaging unit based on the correction position roughly detected by the rough detection step, erroneous detection of the correction position can be reduced.
- a bonding apparatus is a bonding apparatus that performs bonding to a stacked semiconductor device in which semiconductor dies having a predetermined pattern formed are stacked in a plurality of stages, and includes a correction position detection device that detects a correction position of a pattern.
- the correction position detection device detects a pattern candidate that is a pattern candidate based on an image captured by a low-magnification imaging unit capable of capturing a plurality of patterns, and detects the positional relationship between the pattern candidates and the registered positions.
- Rough detection means for roughly detecting the correction position based on the positional relationship, and correction from an image captured by the high magnification imaging means having a higher magnification than the low magnification imaging means, based on the correction position roughly detected by the rough detection means
- Main detection means for detecting the position.
- the coarse detection unit detects the pattern candidate from the image captured by the low-magnification imaging unit, and the positional relationship between the pattern candidates and the position between the registered positions. Since the correction positions are roughly detected based on the relationship, the correction positions can be appropriately ordered. Since the correction position is detected from the image captured by the high-magnification imaging unit based on the correction position roughly detected by the coarse detection unit, erroneous detection of the correction position can be reduced.
- FIG. 4 is a top view showing a stacked state of the stacked semiconductor device, where (a) shows a stacked state aligned as designed, and (b) shows a stacked state shifted from the design. Yes.
- It is a flowchart which shows the correction point detection process of a wire bonding apparatus. It is a flowchart which shows a rough detection process. It is the figure which showed the relationship between the visual field of a low magnification camera, and a laminated semiconductor device.
- the transport direction of the stacked semiconductor device is the X direction
- the width direction of the stacked semiconductor device is the Y direction
- the height direction is the Z direction.
- FIG. 1 is a perspective view showing a wire bonding apparatus according to an embodiment.
- the wire bonding apparatus 1 has a bonding head 3 mounted on an XY table 2 that can move in the XY directions.
- the bonding head 3 has a Z-direction drive mechanism that can move in the Z direction. 4 is attached.
- An ultrasonic horn 5 and a clamper 6 are attached to the Z-direction drive mechanism 4, and a capillary 7 is attached to the tip of the ultrasonic horn 5.
- a wire supplied from a spool 8 is inserted into the capillary 7.
- a camera 9 is fixed to the bonding head 3.
- a ball screw mechanism (not shown) is attached to the XY table 2 and the Z direction drive mechanism 4, and the motor drives the ball screw to rotate in this ball screw mechanism, whereby the XY table 2 moves in the XY direction.
- the Z direction drive mechanism 4 can be moved in the Z direction.
- the XY table 2 and the Z-direction drive mechanism 4 are not limited to movement by motor driving using a ball screw, and may be moved by driving using a linear motor, for example.
- guide rails 10a and 10b for guiding the stacked semiconductor device D to be bonded are attached in front of the bonding head 3 in the Y direction, and are guided and conveyed between the guide rails 10a and 10b.
- a bonding stage 11 that vacuum-sucks the stacked semiconductor device D at a predetermined position is attached.
- FIG. 2 is a perspective view of the imaging apparatus.
- the camera 9 includes an introduction unit 20 that introduces light from the stacked semiconductor device D, which is a subject, and an optical component such as a lens or a mirror inside.
- a lens barrel 21 is provided, and a high-magnification camera 22 and a low-magnification camera 23 each having an image sensor that is attached to the lens barrel 21 and receives light passing through the lens barrel 21 are provided.
- FIG. 3 is a diagram showing the configuration of the optical system of the imaging apparatus.
- the camera 9 has two optical systems, a high-magnification optical path R1 and a low-magnification optical path R2.
- the high-magnification optical path R1 is an optical path from the stacked semiconductor device D, which is a subject, to the imaging surface 26 of the high-magnification camera 22 via the introduction unit 20 and the half mirror 24 and the high-magnification lens 25.
- the low-magnification optical path R2 is reflected from the stacked semiconductor device D, which is the subject, by the half mirror 24 via the introduction unit 20 and branched off from the high-magnification optical path R1, and then reflected by the mirror 27 to pass the low-magnification lens 28. Then, the light path reaches the imaging surface 29 of the low-magnification camera 23.
- Each imaging surface 26, 29 is composed of a CCD, a CMOS element or the like, and can convert a detection value into an electric signal for each pixel and output it.
- the high-power lens 25 and the low-power lens 28 may each be a single lens or a lens group in which a plurality of lenses are combined.
- FIG. 4 is a perspective view of the stacked semiconductor device.
- the stacked semiconductor device D that is transported to the bonding stage 11 and wire-bonded is configured by stacking the same semiconductor dies d1 to d3 in three stages.
- a large number of bonding pads B for wire bonding are printed on the periphery of each of the semiconductor dies d1 to d3.
- a positioning cross pattern P is printed on the corners of the semiconductor dies d1 to d3.
- the semiconductor dies d1 to d3 are stacked with a predetermined gap in the X or Y direction so that the bonding pad B and the pattern P are exposed.
- FIG. 5 is a top view showing a stacked state of the stacked semiconductor device.
- FIG. 5A shows a stacked state aligned as designed, and
- FIG. 5B shows a deviation from the design.
- the stacked state is shown.
- in the stacked semiconductor device D three semiconductor dies d1 to d3 are stacked while being shifted in the X direction (rightward in FIG. 5), and each of the semiconductor dies d1 to d3 is in the same position.
- a pattern P and a bonding pad B are printed.
- the pattern P printed on each of the semiconductor dies d1 to d3 is defined as a pattern P1 printed on the rear side in the Y direction (upper side in FIG.
- the pattern P printed on the front side of d3 in the Y direction is defined as a pattern P2, and is identified by a symbol 1 or 2 corresponding to the printing position of the pattern P.
- the pattern P printed on the lowermost semiconductor die d1 is defined as a pattern P1 (1) and a pattern P2 (1)
- the pattern P printed on the semiconductor die d2 in the intermediate layer is defined as a pattern P1 (2) and a pattern P2 ( 2)
- pattern P1 (3) and pattern P2 (3) are printed on the uppermost semiconductor die d3, and corresponding to the printed semiconductor dies d1 to d3, (1) to (3) It was identified with a sign.
- the patterns P are printed at the same position on each of the semiconductor dies d1 to d3, the patterns P1 (1) to P1 (3) printed on the rear side in the Y direction and the front side in the Y direction.
- the patterns P2 (1) to P2 (3) printed on are respectively arranged in a line. Therefore, the patterns P1 (1) to P1 (3) and the patterns P2 (1) to P2 (3) are referred to as alignments, the patterns P1 (1) to P1 (3) are the first alignment points, and the pattern P2 ( 1) to P2 (3) are the second alignment points.
- the semiconductor dies d1 to d3 are stacked in an aligned state. Designing. The design coordinate positions of the patterns P1 (1), P2 (1) to P1 (3), and P2 (3) formed on the semiconductor dies d1 to d3 are registered as registration points. However, in practice, due to errors in the manufacturing process, the semiconductor dies d1 to d3 may be stacked in a state shifted from the design as shown in FIG. 5B. In such a case, the pattern P and the bonding pad B formed on each of the semiconductor dies d1 to d3 are shifted to positions different from the registration points.
- the wire bonding apparatus 1 is provided with a control unit 30 that comprehensively controls the wire bonding apparatus 1 and detects a correction point (correction position) of the bonding position.
- the controller 30 is electrically connected to a motor (not shown) that drives the XY table 2 and the Z-direction drive mechanism 4, a camera 9, and the like.
- the control part 30 detects the correction point used as the position of the pattern printed on the conveyed laminated semiconductor device D based on the image imaged with the camera 9, and the coordinate position of the registered pattern It is. For this reason, the control unit 30 transmits the imaging control information to the camera 9 and acquires the image captured by the camera 9 and the motor driving the XY table 2 and the Z-direction drive mechanism 4.
- An output unit 36 that displays various control information of the unit 30 and a CPU 31 that performs various controls based on information input from the camera I / F 32, the motor I / F 33, the input unit 35, and the like are provided.
- the memory 34 stores a coarse detection program for coarse detection and a main detection program for detecting correction points in the control unit 30.
- the coarse detection program detects pattern candidates that are candidates for the pattern P from the image captured by the low-magnification camera 23, and based on the positional relationship between the pattern candidates and the positional relationship between the registration points, the conveyance to the registration points is performed.
- This is a program for roughly detecting the detection points of the pattern P of the stacked semiconductor device D. Specifically, a pattern candidate corresponding to a desired registration point is identified as a detection point based on the arrangement order of detected pattern candidates and the arrangement order of registration points, and the position coordinates of the identified detection point are registered points. Roughly detected as a correction point.
- This detection program is a program for detecting a correction point with high accuracy from an image captured by the high-magnification camera 22 on the basis of the roughly detected detection point.
- control unit 30 the CPU 31 reads out the coarse detection program and the main detection program from the memory 34 and develops and executes these programs on a RAM (not shown) to perform rough detection and main detection. For this reason, the control unit 30 functions as a rough detection unit and a main detection unit.
- FIG. 6 is a flowchart showing correction point detection processing of the wire bonding apparatus.
- FIG. 7 is a flowchart showing the rough detection process. Note that the processing described below is performed under the control of the control unit 30.
- the correction point detection process of the wire bonding apparatus 1 will be described with reference to FIG.
- the correction point detection process is sequentially performed for each registered point of the pattern P registered in the memory 34.
- step S1 coarse detection by the low-magnification camera 23 is performed according to the coarse detection program. That is, in the correction point detection process, the coarse detection is performed according to the coarse detection program prior to the correction point detection performed according to the detection program.
- step S ⁇ b> 1 first, the camera 9 is moved so that the introduction unit 20 of the camera 9 is positioned directly above the detection target registration point registered in the memory 34 (upward in the Z-axis direction). Then, the stacked semiconductor device D is imaged by the low-magnification camera 23, detection points that are correction points are roughly detected based on the captured image, and the position coordinates of the roughly detected detection points are stored. Detailed processing of the coarse detection will be described later.
- step S2 the camera 9 is moved to the detection point that has been roughly detected. That is, in step S2, the camera 9 is moved so that the introduction unit 20 of the camera 9 is positioned immediately above the detection point where the rough detection is performed (above the Z direction).
- step S3 the main detection by the high magnification camera 22 is performed. That is, in step S ⁇ b> 3, first, the stacked semiconductor device D is imaged by the high magnification camera 22. Then, the correction point of the pattern P is detected with high accuracy based on the captured image captured at a high magnification by the high magnification camera 22.
- step S4 it is determined whether it is the last detection point. That is, in step S4, it is determined whether or not correction points have been detected by performing rough detection and main detection for all registered points. If it is determined that there is still a detection point that has not yet been detected as a correction point instead of the last detection point, the process returns to step S1, and steps S1 to S3 are repeated again. On the other hand, if it is determined that the detection point is the last detection point, it is determined that correction points have been detected for all detection points, and the correction point detection process ends.
- the wire bonding apparatus 1 calculates the position coordinates of the bonding pad B based on the position coordinates of the correction points detected by the pattern P in step S3. Wire bonding is performed.
- the low-magnification camera 23 detects a pattern candidate for the pattern P. That is, in step S11, first, the camera 9 is moved so that the introduction unit 20 of the camera 9 is located directly above the registration point to be detected registered in the memory 34 (upward in the Z-axis direction). The stacked semiconductor device D is imaged by the camera 23. And the pattern candidate corresponding to the pattern P is detected from a captured image by the matching process using the pattern model of the pattern P shape. In this matching process, a predetermined pattern model is registered in advance, a portion having a different density is cut out from an image captured by the low-magnification camera 23, and the degree of matching between the cut-out portion and the registered pattern model is a set value. The above portion is extracted as a pattern candidate.
- step S12 a point having the same coordinate as the detected coordinate in the pattern candidate is excluded from the pattern candidate. That is, in step S12, the point of the position coordinate that approximates the position coordinate of the detected point that has already been detected in the correction point detecting process up to the previous time is excluded from the pattern candidates.
- step S13 the number of pattern candidates is determined. If it is determined that the pattern candidate is 0 point (the pattern candidate is not detected), the process proceeds to step S14, where it is determined that the alignment detection has failed, and the rough detection process is terminated without roughly detecting the correction point. To do. On the other hand, if it is determined in step S13 that there is only one pattern candidate, the process proceeds to step S19, where it is determined that the alignment detection is successful, and this pattern candidate is used as a detection point, and the rough detection process is terminated.
- step S15 it is determined whether or not the detection point (detection point of the detection target) corresponding to the registration point of the detection target is the last detection point of the first alignment point or the second alignment point. If it is determined that the detection point is the last detection point, the process proceeds to step S16, and the positional relationship between the detection point that is the detection target and the detection point that is the previous detection target is compared. On the other hand, if it is determined that it is not the last detection point, the process proceeds to step S17, and the positional relationship between the detection point to be detected and the next detection point is compared.
- step S18 one point corresponding to the detection point to be detected is specified based on the positional relationship with the comparison target detection point. That is, in the comparison in step S16 or step S17, the correction point is roughly detected based on the positional relationship between the registration point and the pattern candidate. Specifically, the arrangement order of the pattern candidates is compared with the arrangement order of the registration points, and one pattern candidate that matches the arrangement order is specified.
- step S18 when one pattern candidate is specified in step S18, it is determined that the alignment detection has succeeded, the correction point is roughly detected using this pattern candidate as a detection point, and the rough detection process is terminated.
- FIGS. 8 to 10 are views showing the relationship between the field of view of the low-magnification camera and the stacked semiconductor device.
- FIGS. 8 and 10 show the case where the stacked semiconductor devices are stacked while being shifted in the X direction.
- FIG. 9 shows a case where stacked semiconductor devices are stacked while being shifted in the direction opposite to the Y direction.
- S ⁇ b> 1 indicates the field of view of the low-magnification camera 23.
- pattern candidates are obtained from the image captured by the low-magnification camera 23.
- P1 and p2 are detected as 8 and 9
- P1 (1) 'and P1 (2)' indicate registered points registered in the memory 34.
- the stacked semiconductor die D of FIG. 8 will be described as an example.
- the registration point to be detected is P1 (1) '. Since P1 (1) 'is not the last alignment first point, rough detection is performed based on the positional relationship with the next registered point P1 (2)'.
- P1 (1) ′ is located rearward in the X direction with respect to P1 (2) ′ (frontward in the Y direction in FIG. 9), and p1 is located rearward in the X direction with respect to p2.
- the pattern candidate corresponding to the registration point P1 (1) ′ is p1. For this reason, the pattern candidate p1 is roughly detected as a detection point of the registration point P1 (1) ', and the position coordinates of this detection point are stored.
- the registration point to be detected is P1 (2) '.
- the pattern candidate is only p2.
- the pattern candidate p2 is roughly detected as a detection point of the registration point P1 (2) ', and the position coordinates of this detection point are stored.
- P1 (1) ′ to P1 (2) ′ indicate registration points registered in the memory 34.
- the registration point to be detected is P1 (1) '. Since P1 (1) 'is not the last alignment first point, rough detection is performed based on the positional relationship with the next registered point P1 (2)'. Since P1 (1) ′ is located rearward in the X direction from P1 (2) ′, and p1 is located rearward in the X direction from p2, it corresponds to the registration point P1 (1) ′.
- the pattern candidate to be set is p1. For this reason, the pattern candidate p1 is roughly detected as a detection point of the registration point P1 (1) ', and the position coordinates of this detection point are stored.
- the registration point to be detected is P1 (2) '. Since P1 (2) ′ is not the last alignment first point, rough detection is performed based on the positional relationship with the next registered point P1 (3) ′. Since P1 (2) ′ is located rearward in the X direction relative to P1 (3) ′, and p2 is located rearward in the X direction relative to p3, it corresponds to the registration point P1 (2) ′.
- the pattern candidate to be is p2. For this reason, the pattern candidate p2 is roughly detected as a detection point of the registration point P1 (2) ', and the position coordinates of this detection point are stored.
- the registration point to be detected is P1 (3) '. Since P1 (3) 'is the last alignment first point, rough detection is performed based on the positional relationship with the previous registration point P1 (2)'. Since P1 (3) ′ is positioned forward in the X direction relative to P1 (2) ′, and p3 is positioned forward in the X direction relative to p2, it corresponds to the registration point P1 (3) ′.
- the pattern candidate to be is p3. For this reason, the pattern candidate p3 is roughly detected as a detection point of the registration point P1 (3) ', and the position coordinates of this detection point are stored.
- FIGS. FIG. 11 to FIG. 17 are diagrams showing examples of coarse detection, and are diagrams showing the relationship between the field of view of the low magnification camera and the stacked semiconductor device.
- the pattern candidates are two points p11 and p12. Since the pattern P1 (1) is not the last alignment first point, the pattern P1 (1) is compared with the next pattern P1 (2). Since p11 is the front side of p12, p11 is specified as a detection point corresponding to the pattern P1 (1).
- the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2).
- the pattern candidate is only p12. For this reason, p12 is specified as a detection point corresponding to the pattern P1 (2).
- the pattern candidates are two points p13 and p14. Since the pattern P1 (1) is not the last alignment first point, the pattern P1 (1) is compared with the next pattern P1 (2). Since p13 is the front side of p14, p13 is temporarily specified as a detection point corresponding to the pattern P1 (1). However, in this case, since the detection point p13 has already been detected, the detection point corresponding to the second-stage pattern P1 (2) is p14.
- the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2).
- the pattern candidates are two points p13 and p14. Since the pattern P1 (2) is not the last alignment first point, it is compared with the next pattern P1 (3). Since p13 is the front side of p14, p13 is specified as a detection point corresponding to the pattern P1 (2).
- the pattern candidates are three points p15 to p17. Since the pattern P1 (1) is not the last alignment first point, the pattern P1 (1) is compared with the next pattern P1 (2). Since p15 is the front side of p16, p15 is specified as a detection point corresponding to the pattern P1 (1).
- the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2).
- the pattern candidates are p16 and p17. Since the pattern P1 (2) is not the last alignment first point, it is compared with the next pattern P1 (3). Since p16 is the front side of p17, p16 is specified as a detection point corresponding to the pattern P1 (2).
- the pattern candidate is only p18. For this reason, p18 is specified as a detection point corresponding to the pattern P1 (1).
- the first-stage pattern P1 (1) is the first-stage pattern P1 (1).
- the pattern candidate is only p19.
- p19 is specified as a detection point corresponding to the pattern P1 (1).
- the detection point p19 is already detected, the pattern candidate is not detected in the coarse detection corresponding to the second-stage pattern P1 (2) or the third-stage pattern P1 (3). For this reason, the coarse detection ends with an error.
- the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2).
- the pattern candidate since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidate is only p19. For this reason, p19 is specified as a detection point corresponding to the pattern P1 (2).
- the first-stage pattern P1 (1) is the first-stage pattern P1 (1).
- the pattern candidate is only p20. Therefore, for the time being, p20 is specified as a detection point corresponding to the pattern P1 (1).
- the detection point p20 since the detection point p20 has already been detected, pattern candidates are not detected in the coarse detection corresponding to the second-stage pattern P1 (2) and the third-stage pattern P1 (3). For this reason, the coarse detection ends with an error.
- the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2).
- the pattern candidate is only p20. Therefore, for the time being, p20 is specified as a detection point corresponding to the pattern P1 (2).
- the detection point p20 since the detection point p20 has already been detected, no pattern candidate is detected in the rough detection corresponding to the pattern P1 (3) in the third stage. For this reason, the coarse detection ends with an error.
- the detection point is not specified because there is no pattern candidate.
- the detection point is not specified because there is no pattern candidate.
- the detection point is not specified because there is no pattern candidate.
- the high-magnification camera 22 is moved above the detection point specified by the coarse detection. Then, as shown in FIG. 18, the detection point p21 corresponding to the pattern P1 (1) to be detected enters the center of the field of view S2 of the high-magnification camera 22, and the detection magnified by the high-magnification camera 22 at a high magnification. Since the point p21 is imaged, the correction point of the pattern P1 (1) is detected with high accuracy based on this captured image.
- the pattern candidate of the pattern P is detected from the image captured by the low-magnification camera 23, and correction is performed based on the positional relationship between the pattern candidate and the registration point (or detection point). Since the detection points to be points are roughly detected, the detection points can be appropriately ordered. And since a correction point is detected from the image imaged with the high magnification camera 22 based on the detection point by which rough detection was carried out, the erroneous detection of a correction point can be reduced.
- the adjacent pattern is detected by roughly detecting the detection points along the misalignment direction of the stacked semiconductor device D. It is easy to specify the positional relationship between the detection points and the order of detection points can be specified with higher accuracy.
- the rough detection can be quickly performed by detecting the pattern candidate of the pattern P by the matching process with the pattern model.
- the present invention has been described above, but the present invention is not limited to the above embodiment.
- the stacked semiconductor device D has been described on the assumption that the semiconductor dies d1 to d3 are stacked while being shifted in the X direction.
- the bonding pads B and patterns P printed on the semiconductor dies d1 to d3 are described.
- the layers may be stacked while being shifted in an arbitrary direction such as only in the X direction, only in the Y direction, and in the X direction and the Y direction.
- the same semiconductor dies d1 to d3 are described as being stacked in three stages. However, different semiconductor dies may be stacked or stacked in any number of stages.
- the pattern candidate detection in the rough detection is described as being performed by the matching process with the pattern model.
- any method may be used.
- the correction position detection apparatus and the correction position detection method according to the present invention have been described as being applied to a wire bonding apparatus, but may be applied to a die bonding apparatus that bonds a semiconductor die to a substrate or the like. .
- the present invention can be used for a bonding apparatus for bonding a stacked semiconductor device in which semiconductor dies are stacked in a plurality of stages.
- SYMBOLS 1 Wire bonding apparatus, 2 ... XY table, 3 ... Bonding head, 4 ... Z direction drive mechanism, 5 ... Ultrasonic horn, 6 ... Clamper, 7 ... Capillary, 8 ... Spool, 9 ... Camera, 10a, 10b ... Guide Rail, 11 ... Bonding stage, 20 ... Introduction part, 21 ... Lens barrel, 22 ... High magnification camera, 23 ... Low magnification camera, 24 ... Half mirror, 25 ... High magnification lens, 26 ... Imaging surface, 27 ... Mirror, 28 DESCRIPTION OF SYMBOLS ... Low magnification lens, 29 ... Imaging surface, 30 ... Control part, 31 ... CPU, 32 ...
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Abstract
False detection of a correction position in a multilayer semiconductor device is reduced.
Prior to performing main detection, a control section (30) detects pattern candidates which correspond to a pattern (P) from an image picked up by means of a low magnification camera (23), and based on the positional relationship between the pattern candidate and registered coordinates, a detection point to be a correction point is roughly detected. Namely, the order of the pattern candidates and that of the registered coordinates are compared with each other, and the pattern candidate applicable to the order is specified as the detection point. Then, based on the detection point detected by the rough detection, the correction point is detected from an image picked up by a high magnification camera (22). Thus, since the correction points can be suitably ordered, false detection of the correction point can be reduced.
Description
本発明は、複数の半導体ダイがずれて多段に積層された積層型半導体装置の補正位置を検出する補正位置検出装置、補正位置検出方法及びボンディング装置に関する。
The present invention relates to a correction position detection apparatus, a correction position detection method, and a bonding apparatus that detect a correction position of a stacked semiconductor device in which a plurality of semiconductor dies are shifted and stacked in multiple stages.
一般に、半導体ダイの四隅には、位置検出用のパターンが印刷されており、このパターンを利用して、ボンディング位置の補正を行っている(例えば、特許文献1参照)。この補正を行うための補正位置検出装置では、事前のティーチング処理により、半導体ダイに印刷されるパターンの位置座標が登録されている。そして、半導体ダイがボンディングテーブルに搬送されると、登録された位置座標に基づいて高倍率カメラで半導体ダイのパターンを撮像し、この撮像したパターンに基づいて、登録された位置情報に対する補正位置を検出している。
Generally, patterns for position detection are printed at the four corners of a semiconductor die, and bonding positions are corrected using this pattern (see, for example, Patent Document 1). In the correction position detection apparatus for performing this correction, the position coordinates of the pattern printed on the semiconductor die are registered by a prior teaching process. Then, when the semiconductor die is conveyed to the bonding table, the semiconductor die pattern is imaged with a high-magnification camera based on the registered position coordinates, and the correction position for the registered position information is determined based on the imaged pattern. Detected.
ところで、近年、高密度化のために、複数の半導体ダイをずらして多段に積層した積層型半導体装置が考えられてきた。しかしながら、積層型半導体装置は、各半導体ダイの上に別の半導体ダイをボンディングして積層するので、ボンディング時に積層される各半導体ダイが僅かにずれてしまうことがある。
By the way, in recent years, in order to increase the density, a stacked semiconductor device in which a plurality of semiconductor dies are shifted and stacked in multiple stages has been considered. However, since the laminated semiconductor device is laminated by bonding another semiconductor die on each semiconductor die, the semiconductor dies laminated at the time of bonding may slightly shift.
しかしながら、従来の補正位置検出装置では、高倍率カメラを用いた補正位置検出しか行っていないため、隣接するパターンを誤って認識してしまい、補正位置を誤検出するという問題があった。特に、高密度化のために積層される半導体ダイのズレ幅が短くなると、この誤検出は更に顕著となる。
However, since the conventional correction position detection apparatus only performs correction position detection using a high-magnification camera, there is a problem that an adjacent pattern is erroneously recognized and a correction position is erroneously detected. In particular, this misdetection becomes more prominent when the deviation width of semiconductor dies stacked for higher density is shortened.
そこで、本発明は、積層型半導体装置における補正位置の誤検出を低減させることができる補正位置検出装置、補正位置検出方法及びボンディング装置を提供することを目的とする。
Therefore, an object of the present invention is to provide a correction position detection apparatus, a correction position detection method, and a bonding apparatus that can reduce erroneous detection of a correction position in a stacked semiconductor device.
本発明に係る補正位置検出装置は、所定のパターンが形成された半導体ダイが複数段に積層された積層型半導体装置におけるパターンの補正位置を検出する補正位置検出装置であって、複数のパターンを撮像可能な低倍率撮像手段により撮像された画像に基づいてパターンの候補であるパターン候補を検出し、このパターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出する粗検出手段と、粗検出手段により粗検出された補正位置に基づいて、低倍率撮像手段よりも高倍率な高倍率撮像手段により撮像された画像から補正位置を検出する本検出手段と、を含む。
A correction position detection apparatus according to the present invention is a correction position detection apparatus that detects a correction position of a pattern in a stacked semiconductor device in which semiconductor dies on which a predetermined pattern is formed are stacked in a plurality of stages. A rough pattern is detected in which a pattern candidate that is a pattern candidate is detected based on an image captured by a low-magnification imaging unit that can capture an image, and a correction position is roughly detected based on the positional relationship between the pattern candidates and the positional relationship between registered positions. And a main detection unit that detects a correction position from an image captured by a high-magnification imaging unit having a higher magnification than that of the low-magnification imaging unit based on the correction position roughly detected by the coarse detection unit.
本発明に係る補正位置検出装置によれば、粗検出手段により、低倍率撮像手段により撮像された画像に基づいてパターン候補を検出するとともに、パターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出するため、各補正位置を適切に順序付けることができる。そして、粗検出手段により粗検出された補正位置に基づいて、高倍率撮像手段により撮像された画像から補正位置を本検出するため、補正位置の誤検出を低減することができる。
According to the correction position detection apparatus of the present invention, the coarse detection unit detects the pattern candidate based on the image captured by the low-magnification imaging unit, and the positional relationship between the pattern candidates and the positional relationship between the registered positions. Since the correction positions are roughly detected based on the correction positions, the correction positions can be appropriately ordered. Since the correction position is detected from the image captured by the high-magnification imaging unit based on the correction position roughly detected by the coarse detection unit, erroneous detection of the correction position can be reduced.
この場合、粗検出手段は、パターン候補の並び順と登録位置の並び順とに基づいて補正位置を粗検出することが好ましい。この補正位置検出装置によれば、パターン候補の並び順と登録位置の並び順とに基づいて補正位置を粗検出するため、補正位置の誤検出を適切に低減することができる。
In this case, it is preferable that the coarse detection means roughly detects the correction position based on the arrangement order of the pattern candidates and the arrangement order of the registered positions. According to this correction position detection apparatus, the correction position is roughly detected based on the pattern candidate arrangement order and the registration position arrangement order, so that erroneous detection of the correction position can be appropriately reduced.
また、粗検出手段は、積層型半導体装置のズレ方向に沿って補正位置を粗検出することが好ましい。この補正位置検出装置によれば、複数の半導体ダイがずれて多段に積層されているため、積層型半導体装置のズレ方向に沿って補正位置を粗検出することで、隣接するパターンとの位置関係が特定しやすくなり、より高精度に補正位置の並び順を特定することができる。
Further, it is preferable that the coarse detection means roughly detects the correction position along the deviation direction of the stacked semiconductor device. According to this correction position detection apparatus, since a plurality of semiconductor dies are shifted and stacked in multiple stages, the positional relationship between adjacent patterns is detected by roughly detecting the correction position along the misalignment direction of the stacked semiconductor device. Can be easily identified, and the arrangement order of the correction positions can be identified with higher accuracy.
そして、粗検出手段は、所定のパターンモデルとのマッチング処理により、低倍率撮像手段により撮像された画像からパターン候補を検出することが好ましい。この補正位置検出装置によれば、粗検出では補正位置を高精度に検出する必要が無いため、パターンモデルとのマッチング処理によりパターン候補を検出することで、迅速に粗検出を行うことができる。
And it is preferable that the coarse detection means detects a pattern candidate from the image picked up by the low-magnification image pickup means by a matching process with a predetermined pattern model. According to this correction position detection apparatus, since it is not necessary to detect the correction position with high accuracy in the rough detection, the rough detection can be quickly performed by detecting the pattern candidate by the matching process with the pattern model.
本発明に係る補正位置検出方法は、所定のパターンが形成された半導体ダイが複数段に積層された積層型半導体装置におけるパターンの補正位置を検出する補正位置検出方法であって、複数のパターンを撮像可能な低倍率撮像装置により撮像された画像に基づいてパターンの候補であるパターン候補を検出し、このパターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出する粗検出ステップと、粗検出ステップにより粗検出された補正位置に基づいて、低倍率撮像装置よりも高倍率な高倍率撮像装置により撮像された画像から補正位置を検出する本検出ステップと、を含む。
A correction position detection method according to the present invention is a correction position detection method for detecting a correction position of a pattern in a stacked semiconductor device in which semiconductor dies on which a predetermined pattern is formed are stacked in a plurality of stages. A rough pattern that detects a pattern candidate that is a pattern candidate based on an image captured by a low-magnification imaging apparatus that can capture images, and that roughly detects a correction position based on the positional relationship between the pattern candidates and the positional relationship between registered positions. A detection step, and a main detection step of detecting a correction position from an image captured by a high-magnification imaging device having a higher magnification than that of the low-magnification imaging device based on the correction position roughly detected by the coarse detection step.
本発明に係る補正位置検出方法によれば、粗検出ステップにより、低倍率撮像手段により撮像された画像からパターン候補を検出するとともに、パターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出するため、各補正位置を適切に順序付けることができる。そして、粗検出ステップより粗検出された補正位置に基づいて、高倍率撮像手段により撮像された画像から補正位置を本検出するため、補正位置の誤検出を低減することができる。
According to the correction position detection method of the present invention, the coarse detection step detects pattern candidates from the image captured by the low-magnification imaging means, and based on the positional relationship between the pattern candidates and the positional relationship between the registered positions. Since the correction positions are roughly detected, the correction positions can be appropriately ordered. Since the correction position is detected from the image captured by the high-magnification imaging unit based on the correction position roughly detected by the rough detection step, erroneous detection of the correction position can be reduced.
本発明に係るボンディング装置は、所定のパターンが形成された半導体ダイが複数段に積層された積層型半導体装置にボンディングを行うボンディング装置であって、パターンの補正位置を検出する補正位置検出装置を含み、補正位置検出装置は、複数のパターンを撮像可能な低倍率撮像手段により撮像された画像に基づいてパターンの候補であるパターン候補を検出し、このパターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出する粗検出手段と、粗検出手段により粗検出された補正位置に基づいて、低倍率撮像手段よりも高倍率な高倍率撮像手段により撮像された画像から補正位置を検出する本検出手段と、を含む。
A bonding apparatus according to the present invention is a bonding apparatus that performs bonding to a stacked semiconductor device in which semiconductor dies having a predetermined pattern formed are stacked in a plurality of stages, and includes a correction position detection device that detects a correction position of a pattern. The correction position detection device detects a pattern candidate that is a pattern candidate based on an image captured by a low-magnification imaging unit capable of capturing a plurality of patterns, and detects the positional relationship between the pattern candidates and the registered positions. Rough detection means for roughly detecting the correction position based on the positional relationship, and correction from an image captured by the high magnification imaging means having a higher magnification than the low magnification imaging means, based on the correction position roughly detected by the rough detection means Main detection means for detecting the position.
本発明に係るボンディング装置によれば、補正位置検出装置において、粗検出手段により、低倍率撮像手段により撮像された画像からパターン候補を検出するとともに、パターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出するため、各補正位置を適切に順序付けることができる。そして、粗検出手段により粗検出された補正位置に基づいて、高倍率撮像手段により撮像された画像から補正位置を本検出するため、補正位置の誤検出を低減することができる。
According to the bonding apparatus according to the present invention, in the correction position detection apparatus, the coarse detection unit detects the pattern candidate from the image captured by the low-magnification imaging unit, and the positional relationship between the pattern candidates and the position between the registered positions. Since the correction positions are roughly detected based on the relationship, the correction positions can be appropriately ordered. Since the correction position is detected from the image captured by the high-magnification imaging unit based on the correction position roughly detected by the coarse detection unit, erroneous detection of the correction position can be reduced.
本発明によれば、積層型半導体装置における補正位置の誤検出を低減することができる。
According to the present invention, erroneous detection of the correction position in the stacked semiconductor device can be reduced.
以下、図面を参照して、本発明に係る補正位置検出装置、補正位置検出方法及びボンディング装置の好適な実施形態について詳細に説明する。以下の説明では、積層型半導体装置の搬送方向をX方向、積層型半導体装置の幅方向をY方向、高さ方向をZ方向とする。なお、全図中、同一又は相当部分には同一符号を付すこととする。
Hereinafter, preferred embodiments of a correction position detection apparatus, a correction position detection method, and a bonding apparatus according to the present invention will be described in detail with reference to the drawings. In the following description, the transport direction of the stacked semiconductor device is the X direction, the width direction of the stacked semiconductor device is the Y direction, and the height direction is the Z direction. In all drawings, the same or corresponding parts are denoted by the same reference numerals.
図1は、実施形態に係るワイヤボンディング装置を示す斜視図である。図1に示すように、ワイヤボンディング装置1は、XY方向に移動可能なXYテーブル2の上にボンディングヘッド3が取り付けられており、ボンディングヘッド3には、Z方向に移動可能なZ方向駆動機構4が取り付けられている。Z方向駆動機構4には、超音波ホーン5とクランパ6とが取り付けられており、超音波ホーン5の先端部には、キャピラリ7が取り付けられている。キャピラリ7には、スプール8から供給されるワイヤが挿通されている。そして、ボンディングヘッド3には、カメラ9が固定されている。なお、XYテーブル2及びZ方向駆動機構4には、図示しないボールねじ機構が取り付けられており、このボールねじ機構においてモータがボールねじを回転駆動することにより、XYテーブル2のXY方向への移動及びZ方向駆動機構4のZ方向への移動が可能となっている。なお、XYテーブル2及びZ方向駆動機構4は、ボールねじを用いたモータ駆動による移動に限定されるものではなく、例えば、リニアモータを用いた駆動により移動してもよい。
FIG. 1 is a perspective view showing a wire bonding apparatus according to an embodiment. As shown in FIG. 1, the wire bonding apparatus 1 has a bonding head 3 mounted on an XY table 2 that can move in the XY directions. The bonding head 3 has a Z-direction drive mechanism that can move in the Z direction. 4 is attached. An ultrasonic horn 5 and a clamper 6 are attached to the Z-direction drive mechanism 4, and a capillary 7 is attached to the tip of the ultrasonic horn 5. A wire supplied from a spool 8 is inserted into the capillary 7. A camera 9 is fixed to the bonding head 3. Note that a ball screw mechanism (not shown) is attached to the XY table 2 and the Z direction drive mechanism 4, and the motor drives the ball screw to rotate in this ball screw mechanism, whereby the XY table 2 moves in the XY direction. And the Z direction drive mechanism 4 can be moved in the Z direction. The XY table 2 and the Z-direction drive mechanism 4 are not limited to movement by motor driving using a ball screw, and may be moved by driving using a linear motor, for example.
また、ボンディングヘッド3のY方向前方には、ボンディング対象である積層型半導体装置Dをガイドするガイドレール10a,10bが取り付けられており、ガイドレール10a,10bの間にガイドされて搬送されてきた積層型半導体装置Dを所定位置で真空吸着するボンディングステージ11が取り付けられている。
Further, guide rails 10a and 10b for guiding the stacked semiconductor device D to be bonded are attached in front of the bonding head 3 in the Y direction, and are guided and conveyed between the guide rails 10a and 10b. A bonding stage 11 that vacuum-sucks the stacked semiconductor device D at a predetermined position is attached.
図2は、撮像装置の斜視図である。図2に示すように、カメラ9は、被写体である積層型半導体装置Dからの光を導入する導入部20と、内部にレンズやミラーなどの光学部品を備えて導入部20に入った光を導く鏡筒21と、鏡筒21に取り付けられて鏡筒21を通ってきた光を受ける撮像素子を備える高倍率カメラ22及び低倍率カメラ23とを備えている。
FIG. 2 is a perspective view of the imaging apparatus. As shown in FIG. 2, the camera 9 includes an introduction unit 20 that introduces light from the stacked semiconductor device D, which is a subject, and an optical component such as a lens or a mirror inside. A lens barrel 21 is provided, and a high-magnification camera 22 and a low-magnification camera 23 each having an image sensor that is attached to the lens barrel 21 and receives light passing through the lens barrel 21 are provided.
図3は、撮像装置の光学系の構成を示す図である。図3に示すように、カメラ9は、高倍率光路R1と低倍率光路R2の2つの光学系を有している。高倍率光路R1は、被写体である積層型半導体装置Dから導入部20を経由して、ハーフミラー24と高倍率レンズ25を経て高倍率カメラ22の撮像面26に至る光路となる。低倍率光路R2は、被写体である積層型半導体装置Dから導入部20を経由してハーフミラー24で反射されて高倍率光路R1と分岐した後に、ミラー27で反射されて、低倍率レンズ28を経て低倍率カメラ23の撮像面29に至る光路となる。
FIG. 3 is a diagram showing the configuration of the optical system of the imaging apparatus. As shown in FIG. 3, the camera 9 has two optical systems, a high-magnification optical path R1 and a low-magnification optical path R2. The high-magnification optical path R1 is an optical path from the stacked semiconductor device D, which is a subject, to the imaging surface 26 of the high-magnification camera 22 via the introduction unit 20 and the half mirror 24 and the high-magnification lens 25. The low-magnification optical path R2 is reflected from the stacked semiconductor device D, which is the subject, by the half mirror 24 via the introduction unit 20 and branched off from the high-magnification optical path R1, and then reflected by the mirror 27 to pass the low-magnification lens 28. Then, the light path reaches the imaging surface 29 of the low-magnification camera 23.
各撮像面26,29はCCDやCMOS素子などで構成されており、画素毎に検出値を電気信号に変換して出力することができるものである。また、高倍率レンズ25、低倍率レンズ28は、それぞれ単一のレンズであってもよく、複数のレンズを組み合わせたレンズ群であってもよい。
Each imaging surface 26, 29 is composed of a CCD, a CMOS element or the like, and can convert a detection value into an electric signal for each pixel and output it. Further, the high-power lens 25 and the low-power lens 28 may each be a single lens or a lens group in which a plurality of lenses are combined.
図4は、積層型半導体装置の斜視図である。図4に示すように、ボンディングステージ11に搬送されてワイヤボンディングされる積層型半導体装置Dは、同一の半導体ダイd1~d3が3段に積層されて構成されている。各半導体ダイd1~d3の周辺部には、ワイヤボンディングするためのボンディングパッドBが多数印刷されている。また、各半導体ダイd1~d3の角部には、位置決め用の十字状のパターンPが印刷されている。そして、各半導体ダイd1~d3は、ボンディングパッドB及びパターンPが露出するように、X方向又はY方向に所定間隔だけずれて積層されている。
FIG. 4 is a perspective view of the stacked semiconductor device. As shown in FIG. 4, the stacked semiconductor device D that is transported to the bonding stage 11 and wire-bonded is configured by stacking the same semiconductor dies d1 to d3 in three stages. A large number of bonding pads B for wire bonding are printed on the periphery of each of the semiconductor dies d1 to d3. In addition, a positioning cross pattern P is printed on the corners of the semiconductor dies d1 to d3. The semiconductor dies d1 to d3 are stacked with a predetermined gap in the X or Y direction so that the bonding pad B and the pattern P are exposed.
図5は、積層型半導体装置の積層状態を示した上面図であり、図5(a)は、設計どおり整列して積層された状態を示し、図5(b)は、設計に対してずれて積層された状態を示している。図5に示すように、積層型半導体装置Dは3つの半導体ダイd1~d3がX方向(図5において右方向)にずれて積層されており、各半導体ダイd1~d3には、同じ位置にパターンP及びボンディングパッドBが印刷されている。そして、各半導体ダイd1~d3に印刷されるパターンPは、各半導体ダイd1~d3のY方向後方側(図5において上方側)に印刷されるパターンPをパターンP1とし、各半導体ダイd1~d3のY方向前方側(図5において下方側)に印刷されるパターンPをパターンP2として、パターンPの印刷位置に対応して1又は2の符号で識別した。また、最下層の半導体ダイd1に印刷されるパターンPをパターンP1(1)及びパターンP2(1)とし、中間層の半導体ダイd2に印刷されるパターンPをパターンP1(2)及びパターンP2(2)とし、最上層の半導体ダイd3に印刷されるパターンPをパターンP1(3)及びパターンP2(3)として、印刷される半導体ダイd1~d3に対応して(1)~(3)の符号で識別した。そして、上述したように、各半導体ダイd1~d3は同じ位置にパターンPが印刷されているため、Y方向後方側に印刷されたパターンP1(1)~P1(3)と、Y方向前方側に印刷されたパターンP2(1)~P2(3)とは、それぞれ一列状に配置される。このため、パターンP1(1)~P1(3)及びパターンP2(1)~P2(3)をそれぞれアライメントと称し、パターンP1(1)~P1(3)をアライメント1点目とし、パターンP2(1)~P2(3)をアライメント2点目とする。
FIG. 5 is a top view showing a stacked state of the stacked semiconductor device. FIG. 5A shows a stacked state aligned as designed, and FIG. 5B shows a deviation from the design. The stacked state is shown. As shown in FIG. 5, in the stacked semiconductor device D, three semiconductor dies d1 to d3 are stacked while being shifted in the X direction (rightward in FIG. 5), and each of the semiconductor dies d1 to d3 is in the same position. A pattern P and a bonding pad B are printed. The pattern P printed on each of the semiconductor dies d1 to d3 is defined as a pattern P1 printed on the rear side in the Y direction (upper side in FIG. 5) of each of the semiconductor dies d1 to d3. The pattern P printed on the front side of d3 in the Y direction (the lower side in FIG. 5) is defined as a pattern P2, and is identified by a symbol 1 or 2 corresponding to the printing position of the pattern P. Further, the pattern P printed on the lowermost semiconductor die d1 is defined as a pattern P1 (1) and a pattern P2 (1), and the pattern P printed on the semiconductor die d2 in the intermediate layer is defined as a pattern P1 (2) and a pattern P2 ( 2), and pattern P1 (3) and pattern P2 (3) are printed on the uppermost semiconductor die d3, and corresponding to the printed semiconductor dies d1 to d3, (1) to (3) It was identified with a sign. As described above, since the patterns P are printed at the same position on each of the semiconductor dies d1 to d3, the patterns P1 (1) to P1 (3) printed on the rear side in the Y direction and the front side in the Y direction. The patterns P2 (1) to P2 (3) printed on are respectively arranged in a line. Therefore, the patterns P1 (1) to P1 (3) and the patterns P2 (1) to P2 (3) are referred to as alignments, the patterns P1 (1) to P1 (3) are the first alignment points, and the pattern P2 ( 1) to P2 (3) are the second alignment points.
ところで、3つの半導体ダイd1~d3が3段に積層される積層型半導体装置Dの場合、図5(a)に示すように、各半導体ダイd1~d3が整列された状態に積層するように設計している。そして、各半導体ダイd1~d3に形成されたパターンP1(1),P2(1)~P1(3),P2(3)の設計上の座標位置を登録点として登録している。しかしながら、実際には、製造過程の誤差などにより、図5(b)に示すように、設計に対して半導体ダイd1~d3がずれた状態で積層される場合がある。このような場合、各半導体ダイd1~d3に形成されたパターンP及びボンディングパッドBが、登録点とは異なる位置にずれてしまう。
In the case of a stacked semiconductor device D in which three semiconductor dies d1 to d3 are stacked in three stages, as shown in FIG. 5A, the semiconductor dies d1 to d3 are stacked in an aligned state. Designing. The design coordinate positions of the patterns P1 (1), P2 (1) to P1 (3), and P2 (3) formed on the semiconductor dies d1 to d3 are registered as registration points. However, in practice, due to errors in the manufacturing process, the semiconductor dies d1 to d3 may be stacked in a state shifted from the design as shown in FIG. 5B. In such a case, the pattern P and the bonding pad B formed on each of the semiconductor dies d1 to d3 are shifted to positions different from the registration points.
そこで、図1に示すように、ワイヤボンディング装置1には、ワイヤボンディング装置1を統括的に制御するとともに、ボンディング位置の補正点(補正位置)を検出する制御部30が設けられている。制御部30には、XYテーブル2及びZ方向駆動機構4を駆動する図示しないモータやカメラ9などと電気的に接続されている。そして、制御部30は、カメラ9で撮像された画像と登録されたパターンの座標位置とに基づいて、搬送された積層型半導体装置Dに印刷されたパターンの位置となる補正点を検出するものである。このため、制御部30には、カメラ9に撮像制御情報を送信するとともにカメラ9で撮像された画像を取得するカメラI/F32と、XYテーブル2及びZ方向駆動機構4を駆動するモータに対して駆動制御情報を送信するモータI/F33と、メモリ34と、キーボードなどの入力装置であって作業者からの各種制御情報の入力を受け付ける入力部35と、モニタなどの表示装置であって制御部30の各種制御情報を表示する出力部36と、カメラI/F32、モータI/F33、入力部35などから入力された情報に基づいて各種制御を行うCPU31と、が設けられている。
Therefore, as shown in FIG. 1, the wire bonding apparatus 1 is provided with a control unit 30 that comprehensively controls the wire bonding apparatus 1 and detects a correction point (correction position) of the bonding position. The controller 30 is electrically connected to a motor (not shown) that drives the XY table 2 and the Z-direction drive mechanism 4, a camera 9, and the like. And the control part 30 detects the correction point used as the position of the pattern printed on the conveyed laminated semiconductor device D based on the image imaged with the camera 9, and the coordinate position of the registered pattern It is. For this reason, the control unit 30 transmits the imaging control information to the camera 9 and acquires the image captured by the camera 9 and the motor driving the XY table 2 and the Z-direction drive mechanism 4. A motor I / F 33 for transmitting drive control information, a memory 34, an input device 35 such as a keyboard for receiving input of various control information from an operator, and a display device such as a monitor for control. An output unit 36 that displays various control information of the unit 30 and a CPU 31 that performs various controls based on information input from the camera I / F 32, the motor I / F 33, the input unit 35, and the like are provided.
メモリ34には、ボンディングステージ11に搬送される積層型半導体装置DのパターンP及びボンディングパッドBの登録点が登録されている。なお、この登録点の位置座標は、入力部35からの入力により適宜変更することが可能である。また、メモリ34には、制御部30において、粗検出するための粗検出プログラムと、補正点を検出するための本検出プログラムとが格納されている。
In the memory 34, registration points of the pattern P and the bonding pad B of the stacked semiconductor device D conveyed to the bonding stage 11 are registered. Note that the position coordinates of the registration point can be changed as appropriate by input from the input unit 35. The memory 34 also stores a coarse detection program for coarse detection and a main detection program for detecting correction points in the control unit 30.
粗検出プログラムは、低倍率カメラ23で撮像された画像からパターンPの候補となるパターン候補を検出し、このパターン候補同士の位置関係と登録点同士の位置関係とに基づいて、登録点に対する搬送された積層型半導体装置DのパターンPの検出点を粗検出するためのプログラムである。具体的には、検出されたパターン候補の並び順と登録点の並び順とに基づいて所望の登録点に対応するパターン候補を検出点として特定し、この特定した検出点の位置座標を登録点の補正点として粗検出する。
The coarse detection program detects pattern candidates that are candidates for the pattern P from the image captured by the low-magnification camera 23, and based on the positional relationship between the pattern candidates and the positional relationship between the registration points, the conveyance to the registration points is performed. This is a program for roughly detecting the detection points of the pattern P of the stacked semiconductor device D. Specifically, a pattern candidate corresponding to a desired registration point is identified as a detection point based on the arrangement order of detected pattern candidates and the arrangement order of registration points, and the position coordinates of the identified detection point are registered points. Roughly detected as a correction point.
本検出プログラムは、粗検出された検出点に基づいて、高倍率カメラ22で撮像された画像から補正点を高精度に検出するためのプログラムである。
This detection program is a program for detecting a correction point with high accuracy from an image captured by the high-magnification camera 22 on the basis of the roughly detected detection point.
そして、制御部30では、CPU31が、メモリ34から粗検出プログラム及び本検出プログラムを読み出し、これらのプログラムを図示しないRAMなどに展開して実行させることにより、粗検出及び本検出を行う。このため、制御部30は、粗検出手段及び本検出手段として機能する。
In the control unit 30, the CPU 31 reads out the coarse detection program and the main detection program from the memory 34 and develops and executes these programs on a RAM (not shown) to perform rough detection and main detection. For this reason, the control unit 30 functions as a rough detection unit and a main detection unit.
次に、図6及び図7を参照して、ワイヤボンディング装置1の補正点検出処理動作について説明する。図6は、ワイヤボンディング装置の補正点検出処理を示すフローチャートである。図7は、粗検出処理を示すフローチャートである。なお、以下に説明する処理は、制御部30の制御により行われる。
Next, the correction point detection processing operation of the wire bonding apparatus 1 will be described with reference to FIGS. FIG. 6 is a flowchart showing correction point detection processing of the wire bonding apparatus. FIG. 7 is a flowchart showing the rough detection process. Note that the processing described below is performed under the control of the control unit 30.
図6を参照して、ワイヤボンディング装置1の補正点検出処理について説明する。なお、補正点検出処理は、メモリ34に登録されているパターンPの登録点ごとに順次行われる。
The correction point detection process of the wire bonding apparatus 1 will be described with reference to FIG. The correction point detection process is sequentially performed for each registered point of the pattern P registered in the memory 34.
まず、ステップS1において、粗検出プログラムに従って低倍率カメラ23による粗検出を行う。すなわち、補正点検出処理では、本検出プログラムに従って行われる補正点の検出に先立ち、粗検出プログラムに従って粗検出を行う。そして、ステップS1では、まず、カメラ9の導入部20がメモリ34に登録されている検出対象の登録点の真上(Z軸方向上方)に位置するように、カメラ9を移動させる。そして、低倍率カメラ23により積層型半導体装置Dを撮像するとともに、この撮像画像に基づいて補正点となる検出点を粗検出し、この粗検出した検出点の位置座標を記憶しておく。なお、粗検出の詳細な処理は後述する。
First, in step S1, coarse detection by the low-magnification camera 23 is performed according to the coarse detection program. That is, in the correction point detection process, the coarse detection is performed according to the coarse detection program prior to the correction point detection performed according to the detection program. In step S <b> 1, first, the camera 9 is moved so that the introduction unit 20 of the camera 9 is positioned directly above the detection target registration point registered in the memory 34 (upward in the Z-axis direction). Then, the stacked semiconductor device D is imaged by the low-magnification camera 23, detection points that are correction points are roughly detected based on the captured image, and the position coordinates of the roughly detected detection points are stored. Detailed processing of the coarse detection will be described later.
次に、ステップS2において、粗検出された検出点へカメラ9を移動させる。すなわち、ステップS2では、カメラ9の導入部20が粗検出された検出点の真上(Z方向上方)に位置するようにカメラ9を移動する。
Next, in step S2, the camera 9 is moved to the detection point that has been roughly detected. That is, in step S2, the camera 9 is moved so that the introduction unit 20 of the camera 9 is positioned immediately above the detection point where the rough detection is performed (above the Z direction).
そして、ステップS3において、高倍率カメラ22による本検出を行う。すなわち、ステップS3では、まず、高倍率カメラ22により積層型半導体装置Dを撮像する。そして、高倍率カメラ22により高倍率で撮像された撮像画像に基づいて、パターンPの補正点を高精度に検出する。
And in step S3, the main detection by the high magnification camera 22 is performed. That is, in step S <b> 3, first, the stacked semiconductor device D is imaged by the high magnification camera 22. Then, the correction point of the pattern P is detected with high accuracy based on the captured image captured at a high magnification by the high magnification camera 22.
次に、ステップS4において、最後の検出点であるかを判定する。すなわち、ステップS4では、全ての登録点について、粗検出及び本検出を行って補正点を検出したか否かを判定する。そして、最後の検出点ではなく、未だ補正点を検出していない検出点が残っていると判定した場合は、ステップS1に戻り、再度ステップS1~ステップS3を繰り返す。一方、最後の検出点であると判定した場合は、全ての検出点について補正点を検出したものと判断し、補正点検出処理を終了する。
Next, in step S4, it is determined whether it is the last detection point. That is, in step S4, it is determined whether or not correction points have been detected by performing rough detection and main detection for all registered points. If it is determined that there is still a detection point that has not yet been detected as a correction point instead of the last detection point, the process returns to step S1, and steps S1 to S3 are repeated again. On the other hand, if it is determined that the detection point is the last detection point, it is determined that correction points have been detected for all detection points, and the correction point detection process ends.
このようにして全ての補正点が高精度に検出されると、ワイヤボンディング装置1は、パターンPがステップS3で検出された補正点の位置座標に基づいてボンディングパッドBの位置座標を算出し、ワイヤボンディングを行う。
When all the correction points are detected with high accuracy in this way, the wire bonding apparatus 1 calculates the position coordinates of the bonding pad B based on the position coordinates of the correction points detected by the pattern P in step S3. Wire bonding is performed.
次に、図7を参照して、低倍率カメラ23による粗検出処理について説明する。
Next, with reference to FIG. 7, the rough detection process by the low magnification camera 23 will be described.
まず、ステップS11において、低倍率カメラ23でパターンPのパターン候補を検出する。すなわち、ステップS11では、まず、カメラ9の導入部20がメモリ34に登録されている検出対象の登録点の真上(Z軸方向上方)に位置するようにカメラ9を移動させて、低倍率カメラ23により積層型半導体装置Dを撮像する。そして、パターンPの形状のパターンモデルを用いたマッチング処理により、撮像画像からパターンPに対応するパターン候補を検出する。このマッチング処理は、事前に、所定のパターンモデルを登録しておき、低倍率カメラ23で撮像した画像から濃度の異なる部分を切り出し、この切り出した部分と登録したパターンモデルとの適合度が設定値以上となる部分をパターン候補として抽出する。
First, in step S11, the low-magnification camera 23 detects a pattern candidate for the pattern P. That is, in step S11, first, the camera 9 is moved so that the introduction unit 20 of the camera 9 is located directly above the registration point to be detected registered in the memory 34 (upward in the Z-axis direction). The stacked semiconductor device D is imaged by the camera 23. And the pattern candidate corresponding to the pattern P is detected from a captured image by the matching process using the pattern model of the pattern P shape. In this matching process, a predetermined pattern model is registered in advance, a portion having a different density is cut out from an image captured by the low-magnification camera 23, and the degree of matching between the cut-out portion and the registered pattern model is a set value. The above portion is extracted as a pattern candidate.
次に、ステップS12において、パターン候補の中で検出済みの座標と同じ座標の点は、パターン候補から除外する。すなわち、ステップS12では、前回までの補正点検出処理において既に検出された検出点の位置座標と近似する位置座標の点は、パターン候補から除外される。
Next, in step S12, a point having the same coordinate as the detected coordinate in the pattern candidate is excluded from the pattern candidate. That is, in step S12, the point of the position coordinate that approximates the position coordinate of the detected point that has already been detected in the correction point detecting process up to the previous time is excluded from the pattern candidates.
次に、ステップS13において、パターン候補の数を判定する。そして、パターン候補が0点である(パターン候補が検出されない)と判定した場合は、ステップS14に進み、アライメント検出が失敗したと判断して、補正点を粗検出することなく粗検出処理を終了する。一方、ステップS13において、パターン候補が1点のみであると判定した場合は、ステップS19に進み、アライメント検出が成功したと判断してこのパターン候補を検出点として、粗検出処理を終了する。
Next, in step S13, the number of pattern candidates is determined. If it is determined that the pattern candidate is 0 point (the pattern candidate is not detected), the process proceeds to step S14, where it is determined that the alignment detection has failed, and the rough detection process is terminated without roughly detecting the correction point. To do. On the other hand, if it is determined in step S13 that there is only one pattern candidate, the process proceeds to step S19, where it is determined that the alignment detection is successful, and this pattern candidate is used as a detection point, and the rough detection process is terminated.
そして、ステップS13において、パターン候補が複数点あると判定した場合は、ステップS15に進む。ステップS15では、検出対象の登録点に対応する検出点(検出対象の検出点)が、アライメント1点目又はアライメント2点目の最後の検出点であるか否かを判定する。そして、最後の検出点であると判定した場合は、ステップS16に進み、検出対象となる検出点と前の検出対象となった検出点との位置関係を比較する。一方、最後の検出点でないと判定した場合は、ステップS17に進み、検出対象となる検出点と次の検出対象となる検出点との位置関係を比較する。
If it is determined in step S13 that there are a plurality of pattern candidates, the process proceeds to step S15. In step S15, it is determined whether or not the detection point (detection point of the detection target) corresponding to the registration point of the detection target is the last detection point of the first alignment point or the second alignment point. If it is determined that the detection point is the last detection point, the process proceeds to step S16, and the positional relationship between the detection point that is the detection target and the detection point that is the previous detection target is compared. On the other hand, if it is determined that it is not the last detection point, the process proceeds to step S17, and the positional relationship between the detection point to be detected and the next detection point is compared.
次に、ステップS18において、比較対象検出点との位置関係を元に、検出対象の検出点に対応する1点を特定する。すなわち、ステップS16又はステップS17における比較では、登録点とパターン候補との位置関係に基づいて補正点を粗検出する。具体的には、パターン候補の並び順と登録点の並び順とを比較し、この並び順に適合するパターン候補を1点特定する。
Next, in step S18, one point corresponding to the detection point to be detected is specified based on the positional relationship with the comparison target detection point. That is, in the comparison in step S16 or step S17, the correction point is roughly detected based on the positional relationship between the registration point and the pattern candidate. Specifically, the arrangement order of the pattern candidates is compared with the arrangement order of the registration points, and one pattern candidate that matches the arrangement order is specified.
そして、ステップS18において一つのパターン候補が特定されると、アライメント検出が成功したと判断してこのパターン候補を検出点として補正点を粗検出し、粗検出処理を終了する。
Then, when one pattern candidate is specified in step S18, it is determined that the alignment detection has succeeded, the correction point is roughly detected using this pattern candidate as a detection point, and the rough detection process is terminated.
ここで、図8~図10を参照して、粗検出の手法について説明する。図8~図10は、低倍率カメラの視野と積層型半導体装置との関係を示した図であり、図8及び図10は、積層型半導体装置がX方向にずれて積層されている場合を示しており、図9は、積層型半導体装置がY方向の反対方向にずれて積層されている場合を示している。なお、S1は、低倍率カメラ23の視野を示している。
Here, the rough detection method will be described with reference to FIGS. FIGS. 8 to 10 are views showing the relationship between the field of view of the low-magnification camera and the stacked semiconductor device. FIGS. 8 and 10 show the case where the stacked semiconductor devices are stacked while being shifted in the X direction. FIG. 9 shows a case where stacked semiconductor devices are stacked while being shifted in the direction opposite to the Y direction. S <b> 1 indicates the field of view of the low-magnification camera 23.
図8及び図9に示すように、低倍率カメラ23の視野S1に、パターンP1(1)及びパターンP1(2)が入っている場合では、低倍率カメラ23により撮像された画像から、パターン候補としてp1,p2が検出される。なお、図8及び図9において、P1(1)’及びP1(2)’は、メモリ34に登録された登録点を示している。以下の説明では、図8の積層型半導体ダイDを例として説明する。
As shown in FIGS. 8 and 9, in the case where the pattern P1 (1) and the pattern P1 (2) are included in the field of view S1 of the low-magnification camera 23, pattern candidates are obtained from the image captured by the low-magnification camera 23. P1 and p2 are detected as 8 and 9, P1 (1) 'and P1 (2)' indicate registered points registered in the memory 34. In the following description, the stacked semiconductor die D of FIG. 8 will be described as an example.
まず、検出対象の登録点がP1(1)’である場合を考える。P1(1)’はアライメント1点目として最後ではないため、次の登録点であるP1(2)’との位置関係に基づいて粗検出を行う。そして、P1(1)’はP1(2)’よりもX方向において後方(図9では、Y方向において前方)に位置しており、p1はp2よりもX方向において後方に位置しているため、登録点P1(1)’に対応するパターン候補はp1となる。このため、パターン候補p1を登録点P1(1)’の検出点として粗検出し、この検出点の位置座標を記憶しておく。
First, consider a case where the registration point to be detected is P1 (1) '. Since P1 (1) 'is not the last alignment first point, rough detection is performed based on the positional relationship with the next registered point P1 (2)'. P1 (1) ′ is located rearward in the X direction with respect to P1 (2) ′ (frontward in the Y direction in FIG. 9), and p1 is located rearward in the X direction with respect to p2. The pattern candidate corresponding to the registration point P1 (1) ′ is p1. For this reason, the pattern candidate p1 is roughly detected as a detection point of the registration point P1 (1) ', and the position coordinates of this detection point are stored.
次に、検出対象の登録点がP1(2)’である場合を考える。この場合、検出点p1が既に検出されているため、パターン候補は、p2のみとなる。このため、パターン候補p2を登録点P1(2)’の検出点として粗検出し、この検出点の位置座標を記憶しておく。
Next, consider a case where the registration point to be detected is P1 (2) '. In this case, since the detection point p1 has already been detected, the pattern candidate is only p2. For this reason, the pattern candidate p2 is roughly detected as a detection point of the registration point P1 (2) ', and the position coordinates of this detection point are stored.
次に、図10に示すように、低倍率カメラ23の視野S1に、パターンP1(1)~P1(3)が入っている場合では、低倍率カメラ23により撮像された画像から、パターン候補としてp1~p3が検出される。なお、図10において、P1(1)’~P1(2)’は、メモリ34に登録された登録点を示している。
Next, as shown in FIG. 10, in the case where the patterns P1 (1) to P1 (3) are included in the field of view S1 of the low-magnification camera 23, from the image captured by the low-magnification camera 23, as pattern candidates p1 to p3 are detected. In FIG. 10, P1 (1) ′ to P1 (2) ′ indicate registration points registered in the memory 34.
まず、検出対象の登録点がP1(1)’である場合を考える。P1(1)’はアライメント1点目として最後ではないため、次の登録点であるP1(2)’との位置関係に基づいて粗検出を行う。そして、P1(1)’はP1(2)’よりもX方向において後方に位置しており、p1はp2よりもX方向において後方に位置しているため、登録点P1(1)’に対応するパターン候補はp1となる。このため、パターン候補p1を登録点P1(1)’の検出点として粗検出し、この検出点の位置座標を記憶しておく。
First, consider a case where the registration point to be detected is P1 (1) '. Since P1 (1) 'is not the last alignment first point, rough detection is performed based on the positional relationship with the next registered point P1 (2)'. Since P1 (1) ′ is located rearward in the X direction from P1 (2) ′, and p1 is located rearward in the X direction from p2, it corresponds to the registration point P1 (1) ′. The pattern candidate to be set is p1. For this reason, the pattern candidate p1 is roughly detected as a detection point of the registration point P1 (1) ', and the position coordinates of this detection point are stored.
次に、検出対象の登録点がP1(2)’である場合を考える。P1(2)’はアライメント1点目として最後ではないため、次の登録点であるP1(3)’との位置関係に基づいて粗検出を行う。そして、P1(2)’はP1(3)’よりもX方向において後方に位置しており、p2はp3よりもX方向において後方に位置しているため、登録点P1(2)’に対応するパターン候補はp2となる。このため、パターン候補p2を登録点P1(2)’の検出点として粗検出し、この検出点の位置座標を記憶しておく。
Next, consider a case where the registration point to be detected is P1 (2) '. Since P1 (2) ′ is not the last alignment first point, rough detection is performed based on the positional relationship with the next registered point P1 (3) ′. Since P1 (2) ′ is located rearward in the X direction relative to P1 (3) ′, and p2 is located rearward in the X direction relative to p3, it corresponds to the registration point P1 (2) ′. The pattern candidate to be is p2. For this reason, the pattern candidate p2 is roughly detected as a detection point of the registration point P1 (2) ', and the position coordinates of this detection point are stored.
次に、検出対象の登録点がP1(3)’である場合を考える。P1(3)’はアライメント1点目として最後であるため、前の登録点であるP1(2)’との位置関係に基づいて粗検出を行う。そして、P1(3)’はP1(2)’よりもX方向において前方に位置しており、p3はp2よりもX方向において前方に位置しているため、登録点P1(3)’に対応するパターン候補はp3となる。このため、パターン候補p3を登録点P1(3)’の検出点として粗検出し、この検出点の位置座標を記憶しておく。
Next, consider a case where the registration point to be detected is P1 (3) '. Since P1 (3) 'is the last alignment first point, rough detection is performed based on the positional relationship with the previous registration point P1 (2)'. Since P1 (3) ′ is positioned forward in the X direction relative to P1 (2) ′, and p3 is positioned forward in the X direction relative to p2, it corresponds to the registration point P1 (3) ′. The pattern candidate to be is p3. For this reason, the pattern candidate p3 is roughly detected as a detection point of the registration point P1 (3) ', and the position coordinates of this detection point are stored.
次に、図11~図17を参照して、具体的な粗検出について説明する。図11~図17は、粗検出の検出例を示す図であり、低倍率カメラの視野と積層型半導体装置との関係を示した図である。
Next, specific rough detection will be described with reference to FIGS. FIG. 11 to FIG. 17 are diagrams showing examples of coarse detection, and are diagrams showing the relationship between the field of view of the low magnification camera and the stacked semiconductor device.
図11に示すように、低倍率カメラ23による撮像画像からパターン候補としてp11及びp12が検出された場合について説明する。
As shown in FIG. 11, a case where p11 and p12 are detected as pattern candidates from an image captured by the low magnification camera 23 will be described.
まず、最初の検出であって、今回の検出対象(登録点)が1段目のパターンP1(1)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp11及びp12の2点となる。そして、パターンP1(1)はアライメント1点目として最後ではないため、次のパターンP1(2)との比較を行う。そして、p11はp12の前側であるため、p11をパターンP1(1)に対応する検出点として特定する。
First, consider the case of the first detection and the current detection target (registered point) is the first-stage pattern P1 (1). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidates are two points p11 and p12. Since the pattern P1 (1) is not the last alignment first point, the pattern P1 (1) is compared with the next pattern P1 (2). Since p11 is the front side of p12, p11 is specified as a detection point corresponding to the pattern P1 (1).
次に、パターンP1(1)に対応する検出点が既に検出されており、今回の検出対象(登録点)が2段目のパターンP1(2)である場合を考える。この場合、検出点p11が既に検出されているため、パターン候補はp12のみとなる。このため、p12をパターンP1(2)に対応する検出点として特定する。
Next, consider a case where the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2). In this case, since the detection point p11 has already been detected, the pattern candidate is only p12. For this reason, p12 is specified as a detection point corresponding to the pattern P1 (2).
次に、パターンP1(1)及びP1(2)に対応する検出点が既に検出されており、今回の検出対象(登録点)が3段目のパターンP1(3)である場合を考える。この場合、既に検出された検出点p11及びp12を除外すると、パターン候補がなくなるため、検出点が特定されない。
Next, consider a case where detection points corresponding to the patterns P1 (1) and P1 (2) have already been detected and the current detection target (registered point) is the third-stage pattern P1 (3). In this case, if the already detected detection points p11 and p12 are excluded, there are no pattern candidates, and thus no detection point is specified.
次に、図12に示すように、低倍率カメラ23による撮像画像からパターン候補としてp13及びp14が検出された場合について説明する。
Next, as shown in FIG. 12, a case where p13 and p14 are detected as pattern candidates from an image captured by the low magnification camera 23 will be described.
まず、最初の検出であって、今回の検出対象(登録点)が1段目のパターンP1(1)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp13及びp14の2点となる。そして、パターンP1(1)はアライメント1点目として最後ではないため、次のパターンP1(2)との比較を行う。そして、p13はp14の前側であるため、一応、p13をパターンP1(1)に対応する検出点として特定しておく。しかしながら、この場合、検出点p13は既に検出されているため、2段目のパターンP1(2)に対応する検出点はp14となる。そして、検出点p13及びp14は既に検出されているため、3段目のパターンP1(3)の粗検出では、パターン候補が検出されない。このため、粗検出がエラーとなって終了する。このように、検出対象のパターンと検出点とが誤って対応付けられた場合は粗検出がエラーとなるため、誤った位置にボンディングされるのを防止することができる。
First, consider the case of the first detection and the current detection target (registered point) is the first-stage pattern P1 (1). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidates are two points p13 and p14. Since the pattern P1 (1) is not the last alignment first point, the pattern P1 (1) is compared with the next pattern P1 (2). Since p13 is the front side of p14, p13 is temporarily specified as a detection point corresponding to the pattern P1 (1). However, in this case, since the detection point p13 has already been detected, the detection point corresponding to the second-stage pattern P1 (2) is p14. Since the detection points p13 and p14 have already been detected, no pattern candidate is detected in the rough detection of the pattern P1 (3) at the third stage. For this reason, the coarse detection ends with an error. As described above, when the pattern to be detected and the detection point are erroneously associated with each other, rough detection results in an error, so that bonding at an incorrect position can be prevented.
次に、パターンP1(1)に対応する検出点が既に検出されており、今回の検出対象(登録点)が2段目のパターンP1(2)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp13及びp14の2点となる。そして、パターンP1(2)はアライメント1点目として最後ではないため、次のパターンP1(3)との比較を行う。そして、p13はp14の前側であるため、p13をパターンP1(2)に対応する検出点として特定する。
Next, consider a case where the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidates are two points p13 and p14. Since the pattern P1 (2) is not the last alignment first point, it is compared with the next pattern P1 (3). Since p13 is the front side of p14, p13 is specified as a detection point corresponding to the pattern P1 (2).
次に、パターンP1(1)及びP1(2)に対応する検出点が既に検出されており、今回の検出対象(登録点)が3段目のパターンP1(3)である場合を考える。この場合、検出点p13が既に検出されているため、パターン候補はp14のみとなる。このため、p14をパターンP1(3)に対応する検出点として特定する。
Next, consider a case where detection points corresponding to the patterns P1 (1) and P1 (2) have already been detected and the current detection target (registered point) is the third-stage pattern P1 (3). In this case, since the detection point p13 has already been detected, the pattern candidate is only p14. For this reason, p14 is specified as a detection point corresponding to the pattern P1 (3).
次に、図13に示すように、低倍率カメラ23による撮像画像からパターン候補としてp15~p17が検出された場合について説明する。
Next, the case where p15 to p17 are detected as pattern candidates from the image captured by the low-magnification camera 23 as shown in FIG.
まず、最初の検出であって、今回の検出対象(登録点)が1段目のパターンP1(1)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp15~p17の3点となる。そして、パターンP1(1)はアライメント1点目として最後ではないため、次のパターンP1(2)との比較を行う。そして、p15はp16の前側であるため、p15をパターンP1(1)に対応する検出点として特定する。
First, consider the case of the first detection and the current detection target (registered point) is the first-stage pattern P1 (1). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidates are three points p15 to p17. Since the pattern P1 (1) is not the last alignment first point, the pattern P1 (1) is compared with the next pattern P1 (2). Since p15 is the front side of p16, p15 is specified as a detection point corresponding to the pattern P1 (1).
次に、パターンP1(1)に対応する検出点が既に検出されており、今回の検出対象(登録点)が2段目のパターンP1(2)である場合を考える。この場合、検出点p15が既に検出されているため、パターン候補はp16及びp17となる。そして、パターンP1(2)はアライメント1点目として最後ではないため、次のパターンP1(3)との比較を行う。そして、p16はp17の前側であるため、p16をパターンP1(2)に対応する検出点として特定する。
Next, consider a case where the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2). In this case, since the detection point p15 has already been detected, the pattern candidates are p16 and p17. Since the pattern P1 (2) is not the last alignment first point, it is compared with the next pattern P1 (3). Since p16 is the front side of p17, p16 is specified as a detection point corresponding to the pattern P1 (2).
次に、パターンP1(1)及びP1(2)に対応する検出点が既に検出されており、今回の検出対象(登録点)が3段目のパターンP1(3)である場合を考える。この場合、検出点p15及びp16が既に検出されているため、パターン候補はp17のみとなる。このため、p17をパターンP1(3)に対応する検出点として特定する。
Next, consider a case where detection points corresponding to the patterns P1 (1) and P1 (2) have already been detected and the current detection target (registered point) is the third-stage pattern P1 (3). In this case, since the detection points p15 and p16 have already been detected, the pattern candidate is only p17. For this reason, p17 is specified as a detection point corresponding to the pattern P1 (3).
次に、図14に示すように、低倍率カメラ23による撮像画像からパターン候補としてp18のみが検出された場合について説明する。
Next, as shown in FIG. 14, a case where only p18 is detected as a pattern candidate from an image captured by the low-magnification camera 23 will be described.
まず、最初の検出であって、今回の検出対象(登録点)が1段目のパターンP1(1)である場合を考える。この場合、検出済みの座標と同じ座標のパターン候補が無いため、パターン候補はp18のみとなる。このため、p18をパターンP1(1)に対応する検出点として特定する。
First, consider the case of the first detection and the current detection target (registered point) is the first-stage pattern P1 (1). In this case, since there is no pattern candidate having the same coordinates as the detected coordinates, the pattern candidate is only p18. For this reason, p18 is specified as a detection point corresponding to the pattern P1 (1).
次に、パターンP1(1)に対応する検出点が既に検出されており、今回の検出対象(登録点)が2段目のパターンP1(2)である場合を考える。この場合、既に検出された検出点p18を除外すると、パターン候補がなくなるため、検出点が特定されない。
Next, consider a case where the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2). In this case, if the already detected detection point p18 is excluded, there is no pattern candidate, and therefore no detection point is specified.
次に、パターンP1(1)及びP1(2)に対応する検出点が既に検出されており、今回の検出対象(登録点)が3段目のパターンP1(3)である場合を考える。この場合、既に検出された検出点p18を除外すると、パターン候補がなくなるため、検出点が特定されない。
Next, consider a case where detection points corresponding to the patterns P1 (1) and P1 (2) have already been detected and the current detection target (registered point) is the third-stage pattern P1 (3). In this case, if the already detected detection point p18 is excluded, there is no pattern candidate, and therefore no detection point is specified.
次に、図15に示すように、低倍率カメラ23による撮像画像からパターン候補としてp19のみが検出された場合について説明する。
Next, as shown in FIG. 15, a case where only p19 is detected as a pattern candidate from an image captured by the low-magnification camera 23 will be described.
まず、最初の検出であって、今回の検出対象(登録点)が1段目のパターンP1(1)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp19のみとなる。このため、一応、p19をパターンP1(1)に対応する検出点として特定しておく。しかしながら、この場合、検出点p19は既に検出されているため、2段目のパターンP1(2)、又は、3段目のパターンP1(3)に対応する粗検出では、パターン候補が検出されない。このため、粗検出がエラーとなって終了する。
First, consider the case of the first detection and the current detection target (registered point) is the first-stage pattern P1 (1). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidate is only p19. For this reason, p19 is specified as a detection point corresponding to the pattern P1 (1). However, in this case, since the detection point p19 is already detected, the pattern candidate is not detected in the coarse detection corresponding to the second-stage pattern P1 (2) or the third-stage pattern P1 (3). For this reason, the coarse detection ends with an error.
次に、パターンP1(1)に対応する検出点が既に検出されており、今回の検出対象(登録点)が2段目のパターンP1(2)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp19のみとなる。このため、p19をパターンP1(2)に対応する検出点として特定する。
Next, consider a case where the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidate is only p19. For this reason, p19 is specified as a detection point corresponding to the pattern P1 (2).
次に、パターンP1(1)及びP1(2)に対応する検出点が既に検出されており、今回の検出対象(登録点)が3段目のパターンP1(3)である場合を考える。この場合、既に検出された検出点p19を除外すると、パターン候補がなくなるため、検出点が特定されない。
Next, consider a case where detection points corresponding to the patterns P1 (1) and P1 (2) have already been detected and the current detection target (registered point) is the third-stage pattern P1 (3). In this case, if the already detected detection point p19 is excluded, there is no pattern candidate, and therefore no detection point is specified.
次に、図16に示すように、低倍率カメラ23による撮像画像からパターン候補としてp20のみが検出された場合について説明する。
Next, as shown in FIG. 16, a case where only p20 is detected as a pattern candidate from an image captured by the low magnification camera 23 will be described.
まず、最初の検出であって、今回の検出対象(登録点)が1段目のパターンP1(1)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp20のみとなる。このため、一応、p20をパターンP1(1)に対応する検出点として特定しておく。しかしながら、この場合、検出点p20は既に検出されているため、2段目のパターンP1(2)、及び、3段目のパターンP1(3)に対応する粗検出では、パターン候補が検出されない。このため、粗検出がエラーとなって終了する。
First, consider the case of the first detection and the current detection target (registered point) is the first-stage pattern P1 (1). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidate is only p20. Therefore, for the time being, p20 is specified as a detection point corresponding to the pattern P1 (1). However, in this case, since the detection point p20 has already been detected, pattern candidates are not detected in the coarse detection corresponding to the second-stage pattern P1 (2) and the third-stage pattern P1 (3). For this reason, the coarse detection ends with an error.
次に、パターンP1(1)に対応する検出点が既に検出されており、今回の検出対象(登録点)が2段目のパターンP1(2)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp20のみとなる。このため、一応、p20をパターンP1(2)に対応する検出点として特定しておく。しかしながら、この場合、検出点p20は既に検出されているため、3段目のパターンP1(3)に対応する粗検出では、パターン候補が検出されない。このため、粗検出がエラーとなって終了する。
Next, consider a case where the detection point corresponding to the pattern P1 (1) has already been detected and the current detection target (registered point) is the second-stage pattern P1 (2). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidate is only p20. Therefore, for the time being, p20 is specified as a detection point corresponding to the pattern P1 (2). However, in this case, since the detection point p20 has already been detected, no pattern candidate is detected in the rough detection corresponding to the pattern P1 (3) in the third stage. For this reason, the coarse detection ends with an error.
次に、パターンP1(1)及びP1(2)に対応する検出点が既に検出されており、今回の検出対象(登録点)が3段目のパターンP1(3)である場合を考える。この場合、検出済みの検出点の位置座標と同じ位置座標のパターン候補が無いため、パターン候補はp20のみとなる。このため、p20をパターンP1(3)に対応する検出点として特定する。
Next, consider a case where detection points corresponding to the patterns P1 (1) and P1 (2) have already been detected and the current detection target (registered point) is the third-stage pattern P1 (3). In this case, since there is no pattern candidate having the same position coordinate as the position coordinate of the detected detection point, the pattern candidate is only p20. For this reason, p20 is specified as a detection point corresponding to the pattern P1 (3).
次に、図17に示すように、低倍率カメラ23による撮像画像からパターン候補が検出されない場合について説明する。
Next, a case where a pattern candidate is not detected from an image captured by the low-magnification camera 23 as shown in FIG. 17 will be described.
今回の検出対象(登録点)が1段目のパターンP1(1)である場合は、パターン候補が無いため、検出点が特定されない。
If the current detection target (registered point) is the first-stage pattern P1 (1), the detection point is not specified because there is no pattern candidate.
今回の検出対象(登録点)が2段目のパターンP1(2)である場合は、パターン候補が無いため、検出点が特定されない。
If the current detection target (registered point) is the second-stage pattern P1 (2), the detection point is not specified because there is no pattern candidate.
今回の検出対象(登録点)が3段目のパターンP1(3)である場合は、パターン候補が無いため、検出点が特定されない。
If the current detection target (registered point) is the third-stage pattern P1 (3), the detection point is not specified because there is no pattern candidate.
このようにして粗検出が行われると、高倍率カメラ22を粗検出で特定された検出点の上方に移動させる。すると、図18に示すように、高倍率カメラ22の視野S2の中央部に、検出対象のパターンP1(1)に対応する検出点p21が入り、高倍率カメラ22により高倍率で拡大された検出点p21が撮像されるため、この撮像画像に基づいて、パターンP1(1)の補正点が高精度に検出される。
When the coarse detection is performed in this way, the high-magnification camera 22 is moved above the detection point specified by the coarse detection. Then, as shown in FIG. 18, the detection point p21 corresponding to the pattern P1 (1) to be detected enters the center of the field of view S2 of the high-magnification camera 22, and the detection magnified by the high-magnification camera 22 at a high magnification. Since the point p21 is imaged, the correction point of the pattern P1 (1) is detected with high accuracy based on this captured image.
このように、本実施形態によれば、低倍率カメラ23により撮像された画像からパターンPのパターン候補を検出するとともに、このパターン候補と登録点(又は検出点)との位置関係に基づいて補正点となる検出点を粗検出するため、検出点を適切に順序付けることができる。そして、粗検出された検出点に基づいて、高倍率カメラ22により撮像された画像から補正点を検出するため、補正点の誤検出を低減することができる。
As described above, according to the present embodiment, the pattern candidate of the pattern P is detected from the image captured by the low-magnification camera 23, and correction is performed based on the positional relationship between the pattern candidate and the registration point (or detection point). Since the detection points to be points are roughly detected, the detection points can be appropriately ordered. And since a correction point is detected from the image imaged with the high magnification camera 22 based on the detection point by which rough detection was carried out, the erroneous detection of a correction point can be reduced.
この場合、パターン候補の並び順と登録座標の並び順とに基づいて検出点を粗検出するため、補正点の誤検出を適切に低減することができる。
In this case, since detection points are roughly detected based on the arrangement order of pattern candidates and the arrangement order of registered coordinates, erroneous detection of correction points can be appropriately reduced.
また、積層型半導体装置Dは、複数の半導体ダイd1~d3がずれて多段に積層されているため、積層型半導体装置Dのズレ方向に沿って検出点を粗検出することで、隣接するパターンとの位置関係が特定しやすくなり、より高精度に検出点の並び順を特定することができる。
In the stacked semiconductor device D, since the plurality of semiconductor dies d1 to d3 are shifted and stacked in multiple stages, the adjacent pattern is detected by roughly detecting the detection points along the misalignment direction of the stacked semiconductor device D. It is easy to specify the positional relationship between the detection points and the order of detection points can be specified with higher accuracy.
そして、粗検出では検出点を高精度に検出する必要が無いため、パターンモデルとのマッチング処理によりパターンPのパターン候補を検出することで、迅速に粗検出を行うことができる。
Further, since it is not necessary to detect the detection point with high accuracy in the rough detection, the rough detection can be quickly performed by detecting the pattern candidate of the pattern P by the matching process with the pattern model.
以上、本発明の好適な実施形態について説明したが、本発明は上記実施形態に限定されるものではない。例えば、上記実施形態では、積層型半導体装置Dは、半導体ダイd1~d3がX方向にずれて積層されるものとして説明したが、半導体ダイd1~d3に印刷されるボンディングパッドB及びパターンPの配置に応じて、X方向のみ、Y方向のみ、X方向及びY方向など、任意の方向にずれて積層されるものであってもよい。
The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. For example, in the above-described embodiment, the stacked semiconductor device D has been described on the assumption that the semiconductor dies d1 to d3 are stacked while being shifted in the X direction. However, the bonding pads B and patterns P printed on the semiconductor dies d1 to d3 are described. Depending on the arrangement, the layers may be stacked while being shifted in an arbitrary direction such as only in the X direction, only in the Y direction, and in the X direction and the Y direction.
また、上記実施形態では、同一の半導体ダイd1~d3が3段に積層されるものとして説明したが、異なる半導体ダイが積層されてもよく、また、如何なる段数に積層されてもよい。
In the above embodiment, the same semiconductor dies d1 to d3 are described as being stacked in three stages. However, different semiconductor dies may be stacked or stacked in any number of stages.
また、上記実施形態では、粗検出におけるパターン候補の検出は、パターンモデルとのマッチング処理により行うものとして説明したが、如何なる手法により検出してもよい。
In the above embodiment, the pattern candidate detection in the rough detection is described as being performed by the matching process with the pattern model. However, any method may be used.
また、上記実施形態では、本発明に係る補正位置検出装置及び補正位置検出方法をワイヤボンディング装置に適用するものとして説明したが、半導体ダイを基板などにボンディングするダイボンディング装置に適用してもよい。
In the above embodiment, the correction position detection apparatus and the correction position detection method according to the present invention have been described as being applied to a wire bonding apparatus, but may be applied to a die bonding apparatus that bonds a semiconductor die to a substrate or the like. .
本発明は以上説明した実施形態に限定されるものではなく、請求の範囲により規定されている本発明の技術的範囲ないし本質から逸脱することのない全ての変更及び修正を包含するものである。
The present invention is not limited to the embodiments described above, but includes all changes and modifications that do not depart from the technical scope or essence of the present invention defined by the claims.
本発明は、半導体ダイが複数段に積層された積層型半導体装置にボンディングを行うボンディング装置などに利用可能である。
The present invention can be used for a bonding apparatus for bonding a stacked semiconductor device in which semiconductor dies are stacked in a plurality of stages.
1…ワイヤボンディング装置、2…XYテーブル、3…ボンディングヘッド、4…Z方向駆動機構、5…超音波ホーン、6…クランパ、7…キャピラリ、8…スプール、9…カメラ、10a,10b…ガイドレール、11…ボンディングステージ、20…導入部、21…鏡筒、22…高倍率カメラ、23…低倍率カメラ、24…ハーフミラー、25…高倍率レンズ、26…撮像面、27…ミラー、28…低倍率レンズ、29…撮像面、30…制御部、31…CPU、32…カメラI/F、33…モータI/F、34…メモリ、35…入力部、36…出力部、D…積層型半導体装置、d(d1~d3)…半導体ダイ、B…ボンディングパッド、P…パターン、p…検出点(粗検出された補正位置)、R1…高倍率光路、R2…低倍率光路。
DESCRIPTION OF SYMBOLS 1 ... Wire bonding apparatus, 2 ... XY table, 3 ... Bonding head, 4 ... Z direction drive mechanism, 5 ... Ultrasonic horn, 6 ... Clamper, 7 ... Capillary, 8 ... Spool, 9 ... Camera, 10a, 10b ... Guide Rail, 11 ... Bonding stage, 20 ... Introduction part, 21 ... Lens barrel, 22 ... High magnification camera, 23 ... Low magnification camera, 24 ... Half mirror, 25 ... High magnification lens, 26 ... Imaging surface, 27 ... Mirror, 28 DESCRIPTION OF SYMBOLS ... Low magnification lens, 29 ... Imaging surface, 30 ... Control part, 31 ... CPU, 32 ... Camera I / F, 33 ... Motor I / F, 34 ... Memory, 35 ... Input part, 36 ... Output part, D ... Lamination | stacking Type semiconductor device, d (d1 to d3) ... semiconductor die, B ... bonding pad, P ... pattern, p ... detection point (roughly detected correction position), R1 ... high magnification optical path, R2 ... low magnification optical path.
Claims (6)
- 所定のパターンが形成された半導体ダイが複数段に積層された積層型半導体装置におけるパターンの補正位置を検出する補正位置検出装置であって、
複数のパターンを撮像可能な低倍率撮像手段により撮像された画像に基づいてパターンの候補であるパターン候補を検出し、このパターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出する粗検出手段と、
粗検出手段により粗検出された補正位置に基づいて、低倍率撮像手段よりも高倍率な高倍率撮像手段により撮像された画像から補正位置を検出する本検出手段と、
を含む補正位置検出装置。 A correction position detection device for detecting a correction position of a pattern in a stacked semiconductor device in which semiconductor dies on which a predetermined pattern is formed are stacked in a plurality of stages,
A pattern candidate that is a pattern candidate is detected based on an image captured by a low-magnification imaging unit capable of capturing a plurality of patterns, and a correction position is determined based on the positional relationship between the pattern candidates and the positional relationship between registered positions. Coarse detection means for rough detection;
A main detection unit that detects a correction position from an image captured by a high-magnification imaging unit having a higher magnification than the low-magnification imaging unit based on the correction position roughly detected by the coarse detection unit;
A correction position detection apparatus including: - 粗検出手段は、パターン候補の並び順と登録位置の並び順とに基づいて補正位置を粗検出する、請求項1に記載の補正位置検出装置。 2. The correction position detection device according to claim 1, wherein the coarse detection means roughly detects the correction position based on the arrangement order of the pattern candidates and the arrangement order of the registered positions.
- 粗検出手段は、積層型半導体装置のズレ方向に沿って補正位置を粗検出する、請求項1に記載の補正位置検出装置。 2. The correction position detection device according to claim 1, wherein the rough detection means roughly detects the correction position along a deviation direction of the stacked semiconductor device.
- 粗検出手段は、所定のパターンモデルとのマッチング処理により、低倍率撮像手段により撮像された画像からパターン候補を検出する、請求項1に記載の補正位置検出装置。 2. The corrected position detection apparatus according to claim 1, wherein the coarse detection means detects a pattern candidate from an image captured by the low-magnification imaging means by a matching process with a predetermined pattern model.
- 所定のパターンが形成された半導体ダイが複数段に積層された積層型半導体装置におけるパターンの補正位置を検出する補正位置検出方法であって、
複数のパターンを撮像可能な低倍率撮像装置により撮像された画像に基づいてパターンの候補であるパターン候補を検出し、このパターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出する粗検出ステップと、
粗検出ステップにより粗検出された補正位置に基づいて、低倍率撮像装置よりも高倍率な高倍率撮像装置により撮像された画像から補正位置を検出する本検出ステップと、
を含む補正位置検出方法。 A correction position detection method for detecting a correction position of a pattern in a stacked semiconductor device in which semiconductor dies on which a predetermined pattern is formed are stacked in a plurality of stages,
A pattern candidate that is a pattern candidate is detected based on an image captured by a low-magnification imaging device capable of capturing a plurality of patterns, and a correction position is determined based on the positional relationship between the pattern candidates and the positional relationship between registered positions. A coarse detection step for coarse detection;
A main detection step for detecting a correction position from an image captured by a high-magnification imaging device having a higher magnification than the low-magnification imaging device based on the correction position roughly detected by the coarse detection step;
A correction position detection method including: - 所定のパターンが形成された半導体ダイが複数段に積層された積層型半導体装置にボンディングを行うボンディング装置であって、
パターンの補正位置を検出する補正位置検出装置を含み、
補正位置検出装置は、
複数のパターンを撮像可能な低倍率撮像手段により撮像された画像に基づいてパターンの候補であるパターン候補を検出し、このパターン候補同士の位置関係と登録位置同士の位置関係に基づいて補正位置を粗検出する粗検出手段と、
粗検出手段により粗検出された補正位置に基づいて、低倍率撮像手段よりも高倍率な高倍率撮像手段により撮像された画像から補正位置を検出する本検出手段と、
を含むボンディング装置。
A bonding apparatus for bonding to a stacked semiconductor device in which semiconductor dies having a predetermined pattern are stacked in a plurality of stages,
Including a correction position detection device for detecting a correction position of the pattern;
The correction position detection device
A pattern candidate that is a pattern candidate is detected based on an image captured by a low-magnification imaging unit capable of capturing a plurality of patterns, and a correction position is determined based on the positional relationship between the pattern candidates and the positional relationship between registered positions. Coarse detection means for rough detection;
A main detection unit that detects a correction position from an image captured by a high-magnification imaging unit having a higher magnification than the low-magnification imaging unit based on the correction position roughly detected by the coarse detection unit;
Including bonding equipment.
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