WO2010052541A3 - Oxidation and cleaning process for silicon wafers - Google Patents

Oxidation and cleaning process for silicon wafers Download PDF

Info

Publication number
WO2010052541A3
WO2010052541A3 PCT/IB2009/007310 IB2009007310W WO2010052541A3 WO 2010052541 A3 WO2010052541 A3 WO 2010052541A3 IB 2009007310 W IB2009007310 W IB 2009007310W WO 2010052541 A3 WO2010052541 A3 WO 2010052541A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafers
oxidation
cleaning process
oxide layer
silicon
Prior art date
Application number
PCT/IB2009/007310
Other languages
French (fr)
Other versions
WO2010052541A2 (en
Inventor
Ainhoa Esturo-Breton
Steffen Keller
Original Assignee
Centrotherm Photovoltaics Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics Technology Gmbh filed Critical Centrotherm Photovoltaics Technology Gmbh
Publication of WO2010052541A2 publication Critical patent/WO2010052541A2/en
Publication of WO2010052541A3 publication Critical patent/WO2010052541A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Oxidation and cleaning process for silicon wafers, in which the silicon wafers are provided with a silicon oxide layer on at least part of their surface (12; 24), before they are etched in an alkaline etching solution (14;, 26) and they are etched in a solution (16) which contains an acid which oxidises metallic impurities, whereby at least a portion of the silicon oxide layer is exposed unprotected to the etching solution and the acid, and in which the silicon wafers are rinsed in deionised water after the etching processes (18), whereby the at least one unprotected portion of the silicon oxide layer is at least partly left on the silicon wafers and the silicon wafers are dried (20) after rinsing (18; 32).
PCT/IB2009/007310 2008-11-07 2009-11-04 Oxidation and cleaning process for silicon wafers WO2010052541A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200810056455 DE102008056455B3 (en) 2008-11-07 2008-11-07 Oxidation and cleaning process for silicon wafers
DE102008056455.9 2008-11-07

Publications (2)

Publication Number Publication Date
WO2010052541A2 WO2010052541A2 (en) 2010-05-14
WO2010052541A3 true WO2010052541A3 (en) 2010-10-07

Family

ID=41559614

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2009/007310 WO2010052541A2 (en) 2008-11-07 2009-11-04 Oxidation and cleaning process for silicon wafers

Country Status (3)

Country Link
DE (1) DE102008056455B3 (en)
TW (1) TW201027617A (en)
WO (1) WO2010052541A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2955707B1 (en) * 2010-01-27 2012-03-23 Commissariat Energie Atomique METHOD FOR PRODUCING A PHOTOVOLTAIC CELL WITH SURFACE PREPARATION OF A CRYSTALLINE SILICON SUBSTRATE
CN102694078A (en) * 2012-06-16 2012-09-26 成都聚合科技有限公司 Process for cleaning high-concentration-ratio photovoltaic photoelectric conversion receiver module
CN103341458A (en) * 2013-06-15 2013-10-09 成都聚合科技有限公司 High-power concentrating photovoltaic conversion receiver circuit board cleaning technology
CN104384125A (en) * 2014-10-08 2015-03-04 昆山诃德新能源科技有限公司 High-concentration-ratio solar photovoltaic receiver module cleaning process
CN104384126A (en) * 2014-10-10 2015-03-04 昆山诃德新能源科技有限公司 High-concentration-ratio photovoltaic conversion receiver circuit board cleaning process
KR101846443B1 (en) 2017-02-23 2018-04-06 엘지전자 주식회사 Methods for making a oxidation layer for solar cell
CN110600363A (en) * 2019-09-18 2019-12-20 武汉新芯集成电路制造有限公司 Method for removing silicon oxide and method for manufacturing semiconductor device
EP4238663A1 (en) 2022-03-03 2023-09-06 Arva Greentech AG Method for removing organic polluntants from surfaces through in situ generated persulfates and persulfonates
CN117457549B (en) * 2023-12-25 2024-04-12 富芯微电子有限公司 Surface corrosion equipment for thyristor tube core production

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0472441A1 (en) * 1990-08-24 1992-02-26 Seiko Epson Corporation Two-step cleaning method for semiconductor devices
US5904574A (en) * 1995-08-10 1999-05-18 Seiko Epson Corporation Process of making semiconductor device and improved semiconductor device
WO2001013418A1 (en) * 1999-08-16 2001-02-22 Memc Electronic Materials, Inc. A single-operation method of cleaning semiconductors after final polishing
JP2004172271A (en) * 2002-11-19 2004-06-17 Mitsubishi Electric Corp Solar cell and method for manufacturing same
EP2048702A2 (en) * 2007-10-10 2009-04-15 Siltron Inc. Method for cleaning silicon wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514949C3 (en) * 1966-03-26 1975-06-19 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Method for producing a semiconductor component or a semiconductor circuit
WO2000072366A1 (en) * 1999-05-21 2000-11-30 Plasmasil, L.L.C. Method for improving thickness uniformity of semiconductor wafers
DE19962136A1 (en) * 1999-12-22 2001-06-28 Merck Patent Gmbh Etching mixture used in production of structured surfaces on multi-crystalline, tri-crystalline and monocrystalline silicon surfaces of solar cells contains hydrofluoric acid and mineral acids selected from nitric acid
US8268735B2 (en) * 2006-02-01 2012-09-18 Tohoku University Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
DE102007004060B4 (en) * 2007-01-22 2013-03-21 Gp Solar Gmbh Use of an etching solution comprising water, nitric acid and sulfuric acid and etching process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0472441A1 (en) * 1990-08-24 1992-02-26 Seiko Epson Corporation Two-step cleaning method for semiconductor devices
US5904574A (en) * 1995-08-10 1999-05-18 Seiko Epson Corporation Process of making semiconductor device and improved semiconductor device
WO2001013418A1 (en) * 1999-08-16 2001-02-22 Memc Electronic Materials, Inc. A single-operation method of cleaning semiconductors after final polishing
JP2004172271A (en) * 2002-11-19 2004-06-17 Mitsubishi Electric Corp Solar cell and method for manufacturing same
EP2048702A2 (en) * 2007-10-10 2009-04-15 Siltron Inc. Method for cleaning silicon wafer

Also Published As

Publication number Publication date
WO2010052541A2 (en) 2010-05-14
TW201027617A (en) 2010-07-16
DE102008056455B3 (en) 2010-04-29

Similar Documents

Publication Publication Date Title
WO2010052541A3 (en) Oxidation and cleaning process for silicon wafers
WO2010068753A3 (en) Immersive oxidation and etching process for cleaning silicon electrodes
JP2011029619A5 (en) Substrate processing method
JP2010135770A5 (en) Semiconductor device manufacturing method and semiconductor device
WO2008002669A3 (en) Post etch wafer surface cleaning with liquid meniscus
TW200618101A (en) Etching solution and method for removing low-k dielectric layer
JP2010135762A5 (en) Method for manufacturing semiconductor device
MY145605A (en) Electrochemical etching
WO2012012138A3 (en) Method for finishing silicon on insulator substrates
WO2009013307A3 (en) Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell
WO2012057467A3 (en) Copper-containing etchant composition for a metal layer, and etching method using same
JP2009111367A5 (en)
WO2005123282A3 (en) Methods for wet cleaning quartz surfaces of components for plasma processing chambers
GB201223188D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
EP2048702A3 (en) Method for cleaning silicon wafer
JP2010206056A5 (en)
WO2012162185A3 (en) Method for etching gate stack
TW200620446A (en) Removing liquid and removing method of copper deteriorated layer containing copper oxide
ATE528139T1 (en) METHOD FOR PRODUCING A SUBSTRATE FOR A LIQUID DISCHARGE HEAD
WO2007143476A3 (en) Apparatus and method for single substrate processing
JP2011066392A5 (en) Method of manufacturing SOI substrate
JP2008536296A5 (en)
WO2010028825A3 (en) Method for the treatment of substrates, substrate and treatment device for carrying out said method
WO2011040966A3 (en) Improved post-texturing cleaning method for photovoltaic silicon substrates
WO2011031089A3 (en) Cleaning solution composition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09768230

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 09768230

Country of ref document: EP

Kind code of ref document: A2