WO2010004937A1 - タッチパネルの製造方法及び成膜装置 - Google Patents
タッチパネルの製造方法及び成膜装置 Download PDFInfo
- Publication number
- WO2010004937A1 WO2010004937A1 PCT/JP2009/062206 JP2009062206W WO2010004937A1 WO 2010004937 A1 WO2010004937 A1 WO 2010004937A1 JP 2009062206 W JP2009062206 W JP 2009062206W WO 2010004937 A1 WO2010004937 A1 WO 2010004937A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- gas
- transparent substrate
- transparent conductive
- touch panel
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/045—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Definitions
- the present invention relates to a method for manufacturing a touch panel and a film forming apparatus. More specifically, the present invention is preferably provided on a display surface of a flat panel display (FPD) such as a liquid crystal display (LCD),
- FPD flat panel display
- LCD liquid crystal display
- the present invention relates to a touch panel manufacturing method and a film formation apparatus that can be easily input with a finger or the like, can be reduced in size, can reduce the area of a peripheral region excluding a display region, and can reduce manufacturing costs.
- This application claims priority based on Japanese Patent Application No. 2008-179372 for which it applied on July 9, 2008, and uses the content here.
- a resistive film type touch panel is known as a kind of this touch panel.
- a pair of transparent substrates having a transparent conductive film formed on the main surface are arranged facing each other with a predetermined interval so that these transparent conductive films face each other.
- a plurality of insulating spacers are arranged in a matrix between these transparent conductive films.
- This touch panel electrically connects a pair of transparent conductive films at the desired position when a desired position on the viewing-side transparent substrate is pressed toward the display surface, and information on the desired position. Is output to the outside as an electrical signal.
- ITO Indium Tin Oxide
- indium oxide which is a raw material for ITO
- ZnO zinc oxide
- This ZnO-based material is slightly reduced from the stoichiometric composition by slightly reducing ZnO, and oxygen vacancies are formed in the ZnO crystal to release free electrons, or B, Al, It is an n-type semiconductor that exhibits electrical conductivity, for example, when Ga or the like enters the position of Zn ions in the ZnO crystal lattice and emits free electrons.
- This ZnO-based material is suitable for sputtering capable of uniform film formation on a large substrate.
- ZnO can be formed by changing the target of In 2 O 3 material such as ITO to the target of ZnO material. Further, since the ZnO-based material does not contain a lower oxide (InO) having a high insulating property unlike the In 2 O 3- based material, an abnormality in sputtering is less likely to occur.
- an antireflection film may be provided on the transparent substrate in order to improve the antireflection performance.
- This antireflection film has a laminated structure in which a plurality of transparent films having different refractive indexes are laminated.
- a conventional antireflection film for example, a structure in which SiO having a refractive index of 1.45 to 1.46 and TiO having a refractive index of 2.3 to 2.55 are stacked is used.
- the laminated film is formed by so-called reactive sputtering, in which sputtering is performed while introducing a large amount of oxidizing gas. A film was formed.
- the present invention has been made to solve the above-described problem, and in a touch panel using an optical film such as a zinc oxide-based transparent conductive film or an antireflection film, the specific resistance of the zinc oxide-based transparent conductive film is
- An object of the present invention is to provide a method for manufacturing a touch panel and a film forming apparatus capable of reducing transparency and maintaining transparency to visible light. It is another object of the present invention to provide a touch panel manufacturing method and a film forming apparatus capable of forming a transparent conductive film or an optical film with one apparatus even when an optical film such as an antireflection film is provided. . It is another object of the present invention to provide a touch panel manufacturing method and a film forming apparatus capable of forming a film at a film forming speed higher than that of a conventional transparent conductive film or optical film.
- a multilayer optical film or a multilayer optical film and a transparent conductive film can be formed.
- the inventors have made a zinc oxide-based transparent conductive film by sputtering using a target made of a zinc oxide-based material. Is formed in a reactive gas atmosphere containing two or three kinds selected from the group consisting of hydrogen gas, oxygen gas, and water vapor, and the partial pressure of hydrogen gas (P H2 ) the partial pressure of the oxygen gas (P O2) ratio of R (P H2 / P O2) is be performed sputtering under conditions satisfying the following formula (1), to obtain a better touch than the conventional and As a result, the present invention has been completed.
- the inventors of the present invention can reduce the specific resistance of the zinc oxide-based transparent conductive film and maintain transparency to visible light by performing the sputtering method under the above conditions.
- an optical film such as a zinc oxide antireflection film is formed in the same manner as described above, there is no risk of metallic luster and transparency to visible light can be maintained.
- the manufacturing method of the touch panel according to the first aspect of the present invention is a manufacturing method of a touch panel including a transparent substrate having a main surface on which a transparent conductive film is formed, and hydrogen is formed on the main surface of the transparent substrate.
- the transparent conductive film is formed by performing sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three selected from the group of gas, oxygen gas, and water vapor. To do.
- a pair of transparent substrates on which a transparent conductive film is formed are arranged to face each other at a predetermined interval so that the transparent conductive films face each other. It includes a resistive film type that detects the position where the contact is made.
- the touch panel according to the present invention may be a capacitance type in which a low-voltage electric field is formed on the entire surface of the touch panel, the electric field is discharged when a user or the like touches the pressed portion, and the position is detected.
- a target made of a zinc oxide-based material is used on a main surface of a transparent substrate in a reactive gas atmosphere containing two or three kinds selected from the group of hydrogen gas, oxygen gas, and water vapor.
- a transparent conductive film is formed by performing sputtering.
- the atmosphere for forming the zinc oxide-based transparent conductive film on the transparent substrate by sputtering is an atmosphere containing two or three selected from the group of hydrogen gas, oxygen gas, and water vapor, ie, reduction.
- An atmosphere in which the ratio of the oxidizing gas and the oxidizing gas is harmonized can be achieved.
- the obtained transparent conductive film does not produce metallic luster and can maintain transparency to visible light.
- the manufacturing method of the touch panel in the 2nd mode of the present invention includes the 1st transparent substrate and the 2nd transparent substrate which have the main surface in which the transparent conductive film was formed, the transparent conductive film of the 1st transparent substrate, and the 2nd A method for manufacturing a touch panel in which the first transparent substrate and the second transparent substrate are arranged to face each other so that the transparent conductive films of the transparent substrate face each other and are spaced apart at a predetermined interval, A reactive gas containing two or three selected from the group consisting of hydrogen gas, oxygen gas, and water vapor on the main surface of one or both of the first transparent substrate and the second transparent substrate.
- the transparent conductive film is formed by performing sputtering using a target made of a zinc oxide-based material in an atmosphere.
- a transparent conductive film is formed by performing a sputtering method using a target made of a zinc oxide-based material in a reactive gas atmosphere containing.
- the atmosphere for forming the zinc oxide-based transparent conductive film on the transparent substrate by sputtering is an atmosphere containing two or three selected from the group of hydrogen gas, oxygen gas, and water vapor, ie, reduction.
- An atmosphere in which the ratio of the oxidizing gas and the oxidizing gas is harmonized can be achieved.
- the obtained transparent conductive film does not produce metallic luster and can maintain transparency to visible light.
- the manufacturing method of the touch panel in the 3rd mode of the present invention includes the 1st transparent substrate and the 2nd transparent substrate which have the main surface in which the transparent conductive film was formed, the transparent conductive film of the 1st transparent substrate, and the 2nd A method for manufacturing a touch panel in which the first transparent substrate and the second transparent substrate are arranged to face each other so that the transparent conductive films of the transparent substrate face each other and are spaced apart at a predetermined interval, Oxidized on a main surface of one of the first transparent substrate and the second transparent substrate in a reactive gas atmosphere containing two or three selected from the group consisting of hydrogen gas, oxygen gas, and water vapor An optical film is formed by performing sputtering using a target made of a zinc-based material, and then the transparent conductive film is formed on the optical film.
- the atmosphere when forming the zinc oxide optical film on the transparent substrate by sputtering is an atmosphere containing two or three selected from the group of hydrogen gas, oxygen gas, and water vapor, that is, reducing property.
- An atmosphere in which the ratio of gas to oxidizing gas is harmonized can be achieved.
- the sputtering method is performed in this atmosphere, the number of oxygen vacancies in the zinc oxide crystal is controlled in the obtained optical film, and light absorption due to the oxygen vacancies is reduced. Metallic luster does not occur and transparency to visible light can be maintained.
- the manufacturing method of the touch panel in the 4th mode of the present invention includes the 1st transparent substrate and the 2nd transparent substrate which have the main surface in which the transparent conductive film was formed, the transparent conductive film of the 1st transparent substrate, and the 2nd A method for manufacturing a touch panel in which the first transparent substrate and the second transparent substrate are arranged to face each other so that the transparent conductive films of the transparent substrate face each other and are spaced apart at a predetermined interval, On the main surface of either the first transparent substrate or the second transparent substrate, in a reactive gas atmosphere containing two or three selected from the group of hydrogen gas, oxygen gas, and water vapor An optical film is formed by performing sputtering using a target made of one zinc oxide-based material, and then two or more kinds selected from the group of hydrogen gas, oxygen gas, and water vapor are formed on the optical film. Reactivity including 3 species By performing sputtering method using a target composed of the second zinc oxide-based material in vinegar atmosphere, forming the transparent conductive film.
- the atmosphere when forming the zinc oxide optical film on the transparent substrate by sputtering is an atmosphere containing two or three selected from the group of hydrogen gas, oxygen gas, and water vapor, that is, reducing property.
- An atmosphere in which the ratio of gas to oxidizing gas is harmonized can be achieved.
- the sputtering method is performed in this atmosphere, the number of oxygen vacancies in the zinc oxide crystal is controlled in the obtained optical film, and light absorption due to the oxygen vacancies is reduced. Metallic luster does not occur and transparency to visible light can be maintained.
- a sputtering method using a target made of a second zinc oxide-based material in a reactive gas atmosphere containing two or three selected from the group consisting of hydrogen gas, oxygen gas, and water vapor on the optical film As a result, a transparent conductive film is formed.
- the atmosphere for forming the zinc oxide-based transparent conductive film on the optical film by sputtering is an atmosphere containing two or three selected from the group consisting of hydrogen gas, oxygen gas, and water vapor, that is, reduction.
- An atmosphere in which the ratio of the oxidizing gas and the oxidizing gas is harmonized can be achieved.
- the obtained transparent conductive film does not produce metallic luster and can maintain transparency to visible light.
- the sputtering voltage used when performing the sputtering method is preferably 340 V or less.
- the sputtering voltage used when performing the sputtering method is preferably a voltage in which a high frequency voltage is superimposed on a DC voltage.
- the maximum value of the horizontal magnetic field strength on the surface of the target is preferably 600 gauss or more.
- the zinc oxide-based material is preferably aluminum-added zinc oxide or gallium-added zinc oxide.
- a film forming apparatus for manufacturing a touch panel includes a vacuum vessel, a target holding unit that holds a target in the vacuum vessel, and a power source that applies a sputtering voltage to the target, and the vacuum
- the container has two or more of a hydrogen gas introduction part, an oxygen gas introduction part, and a water vapor introduction part.
- the vacuum container includes two or more of a hydrogen gas introduction unit, an oxygen gas introduction unit, and a water vapor introduction unit. Accordingly, a zinc oxide-based transparent conductive film or an optical film is formed on a substrate by sputtering using a target made of a zinc oxide-based material using two or more of a hydrogen gas introducing portion, an oxygen gas introducing portion, and a water vapor introducing portion.
- the atmosphere in forming the film can be a reactive gas atmosphere in which the ratio of reducing gas to oxidizing gas is harmonized. Therefore, the number of oxygen vacancies in the zinc oxide crystal is controlled, which reduces the specific resistance, does not cause metallic luster, and can maintain transparency with respect to visible light.
- One or both of a film and a zinc oxide-based optical film capable of maintaining transparency to visible light without producing metallic luster and using a target made of a zinc oxide-based material are used as one device. It becomes possible to form a film.
- this film forming apparatus not only can these transparent conductive films or optical films be formed, but a single type of target made of a zinc oxide-based material is used, and a multilayer optical film or a multilayer The optical film and the transparent conductive film can be formed. Furthermore, it becomes possible to use a DC power source or an AC power source, and it is possible to form a film at a speed higher than the conventional film forming speed.
- the power source uses a DC power source and a high-frequency power source in combination.
- this film forming apparatus it is possible to reduce the sputtering voltage by using a DC power source and a high frequency power source together, and it is possible to form a zinc oxide-based transparent conductive film or optical film in which the crystal lattice is arranged. It becomes possible.
- this film forming apparatus it is possible to obtain a transparent conductive film that has low specific resistance, does not cause metallic luster, and can maintain transparency to visible light.
- an optical film capable of maintaining transparency to visible light without causing metallic luster can be obtained.
- the manufacturing method preferably includes a magnetic field generation unit that is provided in the target holding unit and generates a horizontal magnetic field having a maximum intensity of 600 gauss or more on the surface of the target.
- a magnetic field generation unit that generates a horizontal magnetic field having a maximum intensity of 600 gauss or more on the surface of the target.
- the vertical magnetic field on the target surface is zero (horizontal).
- High density plasma is generated at a position where the magnetic field is maximum. As a result, it becomes possible to form a zinc oxide-based transparent conductive film or optical film with a well-organized crystal lattice.
- the touch panel manufacturing method of the first aspect of the present invention in a reactive gas atmosphere containing two or three types selected from the group of hydrogen gas, oxygen gas, and water vapor on the main surface of the transparent substrate. Since a transparent conductive film is formed by sputtering using a target made of a zinc oxide-based material, the specific resistance of the zinc oxide-based transparent conductive film can be reduced, and transparency to visible light is also achieved. Can be maintained. Therefore, a zinc oxide-based transparent conductive film having low specific resistance and excellent transparency to visible light can be easily formed.
- a group of hydrogen gas, oxygen gas, and water vapor on one or both main surfaces of the pair of the first transparent substrate and the second transparent substrate Since a transparent conductive film is formed by performing sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three selected from the above, a zinc oxide-based transparent conductive The specific resistance of the film can be reduced, and transparency to visible light can be maintained. Therefore, a zinc oxide-based transparent conductive film having low specific resistance and excellent transparency to visible light can be easily formed.
- the method for manufacturing a touch panel on one main surface of the pair of the first transparent substrate and the second transparent substrate, selected from the group of hydrogen gas, oxygen gas, and water vapor. Since an optical film is formed by performing sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three types, the metallic luster in the zinc oxide-based optical film Can be prevented, and transparency to visible light can be maintained. Therefore, it is possible to easily form a zinc oxide optical film excellent in transparency to visible light.
- the main surface of either one of the pair of the first transparent substrate and the second transparent substrate is selected from the group of hydrogen gas, oxygen gas, and water vapor.
- An optical film is formed by performing a sputtering method using a target made of the first zinc oxide-based material in a reactive gas atmosphere containing two or three kinds of the zinc oxide-based optical film.
- the metallic luster in can be prevented, and transparency to visible light can be maintained. Therefore, it is possible to easily form a zinc oxide optical film excellent in transparency to visible light.
- a sputtering method using a target made of a second zinc oxide-based material in a reactive gas atmosphere containing two or three selected from the group consisting of hydrogen gas, oxygen gas, and water vapor on the optical film Since the transparent conductive film is formed by performing the above, the specific resistance of the zinc oxide-based transparent conductive film can be reduced, and transparency to visible light can be maintained. Therefore, a zinc oxide-based transparent conductive film having low specific resistance and excellent transparency to visible light can be easily formed.
- the vacuum vessel includes two or more of the hydrogen gas introduction part, the oxygen gas introduction part, and the water vapor introduction part, these are controlled.
- the atmosphere when forming the zinc oxide-based transparent conductive film or optical film in the vacuum container can be a reactive gas atmosphere in which the ratio of the reducing gas to the oxidizing gas is harmonized. Therefore, a zinc oxide-based transparent conductive film having a low specific resistance and excellent transparency to visible light or a zinc oxide-based transparency excellent in transparency to visible light can be obtained by simply improving a part of the conventional film forming apparatus.
- the optical film can be easily formed by one apparatus using a target made of a zinc oxide-based material.
- these transparent conductive films or optical films use a single target made of a zinc oxide-based material, and form a multilayer optical film or a multilayer optical film and a transparent conductive film only by changing the introduced gas. be able to. Further, a DC power source or an AC power source can be used, and film formation can be performed at a speed higher than the conventional film formation rate.
- Substrate temperature is a diagram showing the effects resulting H to 2 O gas (water vapor) in thermal film formation when set to 250 ° C..
- Substrate temperature is a diagram showing the effects due to the case of introducing H 2 gas and O 2 gas at the same time in the heating film formation when it is set to 250 ° C..
- Substrate temperature is a diagram showing the effects due to the case of introducing H 2 gas and O 2 gas at the same time in the heating film formation when it is set to 250 ° C.. It shows the effect caused by the H 2 gas in the unheated film deposition. It is sectional drawing which shows the principal part of the film-forming chamber in the inter-back-type magnetron sputtering apparatus of the 2nd Embodiment of this invention.
- FIG. 1 is a cross-sectional view showing a main part of a resistive film type touch panel according to a first embodiment of the present invention.
- This touch panel 1 is provided on an image display surface 2a of a liquid crystal display (LCD) 2 via a spacer 3, and includes a drive circuit 4 that is a lower electrode, a detection circuit 5 that is an upper electrode, and a drive circuit 4.
- a plurality of insulating spacers 6 are arranged between the detection circuit 5 and the detection circuit 5.
- an antireflection film (optical film) 12 and a transparent conductive film 13 are sequentially formed on the surface (main surface) 11 a of a transparent substrate 11 made of a plastic such as a polyimide film or a glass plate such as non-alkali glass.
- the detection circuit 5 has a hard coat film 15 formed on the surface 14a of a plastic film (transparent substrate) 14 made of polyethylene terephthalate (PET) or the like, and a transparent conductive film 16 formed on the back surface (main surface) 14b. It is configured.
- the drive circuit 4 and the detection circuit 5 are arranged at a predetermined interval so that the transparent conductive films 13 and 16 face each other. These transparent conductive films 13 and 16 are bonded and fixed via an adhesive 17, and the insulating spacer 6 for maintaining the distance between the transparent conductive films 13 and 16 between the transparent conductive films 13 and 16. Are arranged in a matrix.
- the antireflection film 12 includes a plurality of transparent films having different refractive indexes so that the refractive index decreases sequentially from the surface 11 a of the transparent substrate 11 toward the position where the transparent conductive film 13 is disposed.
- the film has a laminated structure in which a transparent film 12a having a high refractive index and a transparent film 12b having a low refractive index are stacked.
- the laminated structure of the antireflection film 12 for example, aluminum-added zinc oxide (AZO) added with aluminum oxide (Al 2 O 3 ), gallium-added zinc oxide (GZO) added with gallium oxide (Ga 2 O 3 ), A laminated structure in which films made mainly of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), etc. are laminated is preferably used.
- AZO aluminum-added zinc oxide
- GZO gallium-added zinc oxide
- Ga 2 O 3 gallium-added zinc oxide
- SiO 2 silicon oxide
- TiO 2 titanium oxide
- the transparent film 12a having a high refractive index with a refractive index of, for example, 1.91 is argon (Ar) with aluminum-added zinc oxide (AZO) as a target. It can be obtained by forming a film in a gas atmosphere or an argon (Ar + O 2 ) gas atmosphere containing oxygen.
- the transparent film 12b having a low refractive index of, for example, 1.64 is used in the hydrogen (H 2 ) gas atmosphere or the water vapor (H 2 O) atmosphere with the above-described aluminum-added zinc oxide (AZO) as a target. Obtained by film formation.
- two types of refractive index films can be formed using the same type of target only by changing the type of reaction gas. Therefore, it is possible to easily form a film having a stacked structure using one apparatus (the same apparatus). Further, when a ZnO-based target such as AZO or GZO is used, sputtering can be performed using only a DC power source or an AC power source, and thus the structure of the film forming apparatus can be easily simplified.
- RF sputtering has a relatively slow film formation rate, but the film formation apparatus of the first embodiment can use a DC power source or an AC power source, and thus can increase the film formation rate. Furthermore, the discharge pressure can be lowered by superimposing the RF output on the output of the DC power supply or AC power supply.
- a reactive sputtering method using a conventional Si target has a deposition rate of 20 to 30 ⁇ / min (per 1 W / cm 2 : the same applies below), and Ti reactive sputtering. Compared with the deposition rate of about angstrom / min in the method, when the AZO film is sputtered using ZnO—Al 2 O 3 as a target, a deposition rate of 50 to 80 angstrom / min is obtained.
- the AZO film is sputtered by using ZnO—Al 2 O 3 as a target and introducing a gas containing oxygen or hydrogen atoms
- the amount of reactive gas introduced is Si Or less than in the case of reactive sputtering using a Ti target.
- a desired position (address) on the hard coat film 15 of the plastic film 14 is pressed toward the transparent substrate 11 with a touch pen or a finger or the like, thereby transparent at the desired position (address).
- the conductive film 13 and the transparent conductive film 16 are electrically connected (conducted) to be in an “on” state, and information on the “on” state at the desired position (address) is operated within the surface of the touch panel 1. It is output as an electrical signal indicating the address.
- FIG. 3 is a schematic configuration diagram showing a sputtering apparatus (film forming apparatus) used in the touch panel manufacturing method of the first embodiment
- FIG. 4 is a cross-sectional view showing the main part of the film forming chamber in the sputtering apparatus of FIG. is there.
- the sputtering apparatus 21 is an inter-back type sputtering apparatus.
- a loading / unloading chamber 22 for loading or unloading a substrate such as an alkali-free glass substrate (not shown), and a zinc oxide-based transparent conductive film on the substrate.
- a film formation chamber (vacuum container) 23 for forming a film.
- the charging / unloading chamber 22 is provided with a roughing exhaust unit 24 such as a rotary pump for roughly evacuating the chamber, and a substrate tray 25 for holding and transporting the substrate is movably disposed in the chamber. ing.
- a heater 31 for heating the substrate 26 is vertically provided on one side surface (first side surface) 23a of the film forming chamber 23, and a zinc oxide-based material is formed on the other side surface (second side surface) 23b.
- a cathode (target holding unit) 32 for holding the target 27 and applying a desired sputtering voltage is provided in a vertical type.
- a high vacuum evacuation unit 33 such as a turbo molecular pump for evacuating the chamber is sputtered on the target 27.
- a power source 34 for applying a voltage and a gas introduction part 35 for introducing gas into the chamber are provided.
- the cathode 32 is composed of a plate-shaped metal plate, and is a member to which the target 27 is bonded (fixed) via a brazing material or the like.
- the power source 34 has a function of applying a sputtering voltage in which a high frequency voltage is superimposed on a direct current voltage to the target 27, and includes a direct current (DC) power source and a high frequency (RF) power source (not shown).
- the gas introduction unit 35 includes a sputtering gas introduction unit 35a that introduces a sputtering gas such as Ar, a hydrogen gas introduction unit 35b that introduces hydrogen gas, an oxygen gas introduction unit 35c that introduces oxygen gas, and water vapor that introduces water vapor. And an introduction part 35d.
- the introduction parts 35b to 35d are selectively used as necessary.
- a method for sequentially forming the zinc oxide-based antireflection film 12 and the transparent conductive film 13 on the transparent substrate 11 using the sputtering apparatus 21 will be described.
- a non-alkali glass substrate is used as the transparent substrate 11, and a two-layer film made of a zinc oxide-based material such as aluminum-added zinc oxide (AZO) or gallium-added zinc oxide (GZO) is used as the antireflection film 12.
- AZO aluminum-added zinc oxide
- GZO gallium-added zinc oxide
- a zinc oxide target 27 is bonded and fixed to the cathode 32 with a brazing material or the like.
- a zinc oxide-based material for example, aluminum-added zinc oxide (AZO) added with 0.1 to 10% by mass of aluminum oxide (Al 2 O 3 ), gallium oxide (Ga 2 O 3 ) Gallium-added zinc oxide (GZO) to which 0.1 to 10% by mass is added.
- AZO aluminum-added zinc oxide
- Ga 2 O 3 gallium oxide
- GZO Gallium-added zinc oxide
- the substrate 26 is stored in the substrate tray 25 of the preparation / removal chamber 22, and the preparation / removal chamber 22 and the film formation chamber 23 are roughly evacuated by the roughing exhaust unit 24.
- the preparation / removal chamber 22 and the film formation chamber 23 reach a predetermined degree of vacuum, for example, 0.27 Pa (2.0 ⁇ 10 ⁇ 3 Torr)
- the substrate 26 is carried into the film formation chamber 23 from the preparation / removal chamber 22.
- the substrate 26 is disposed in front of the heater 31 in a state where the setting is turned off, the substrate 26 is opposed to the target 27, and the substrate 26 is heated by the heater 31 to be within a range of 100 ° C. to 600 ° C. Set the temperature to.
- the film forming chamber 23 is evacuated by the high vacuum exhaust unit 33, and the film forming chamber 23 is set to a predetermined high vacuum, for example, 2.7 ⁇ 10 ⁇ 4 Pa (2.0 ⁇ 10 ⁇ 6 Torr). Is done. Thereafter, the sputtering gas introducing unit 35a introduces Ar gas into the film forming chamber 23, or the sputtering gas introducing unit 35a and the oxygen gas introducing unit 35c introduce Ar gas and O 2 gas. The inside of the chamber 23 is set to an Ar gas atmosphere or an Ar gas (Ar + O 2 ) atmosphere containing O 2 gas.
- a sputtering voltage is applied to the target 27 by the power supply 34.
- This sputtering voltage is preferably 340 V or less.
- This sputtering voltage is preferably a voltage in which a high-frequency voltage is superimposed on a DC voltage.
- the discharge voltage can be further lowered by superimposing the high-frequency voltage on the DC voltage.
- the atmosphere in the film formation chamber 23 is an Ar gas atmosphere or an Ar gas (Ar + O 2 ) atmosphere containing O 2 gas. Therefore, if the sputtering method is performed in this atmosphere, the transparent obtained In the film, the number of oxygen vacancies in the zinc oxide crystal is controlled, and a high refractive index transparent film 12a having a desired high refractive index, for example, around 2.0, and a desired specific resistance (conductivity) is obtained.
- the atmosphere during film formation is Ar gas atmosphere or Ar containing O 2 gas. It is preferable to change from a gas (Ar + O 2 ) atmosphere to an atmosphere in which H 2 gas and / or H 2 O gas (water vapor) is added to Ar gas containing Ar gas or O 2 gas. This is realized by performing either one or both of introduction of H 2 gas by the hydrogen gas introduction unit 35b and introduction of H 2 O gas (water vapor) by the water vapor introduction unit 35d into the film forming chamber 23. be able to.
- this low refractive index transparent film When forming this low refractive index transparent film, the same zinc oxide target 27 used for forming the high refractive index transparent film is used, and the atmosphere during film formation is H 2 gas and / or H 2 O. It is controlled to contain gas (water vapor). Thereby, a low refractive index transparent film in which the refractive index of the transparent film is shifted to the low refractive index side is formed.
- H 2 gas and / or H 2 O gas water vapor
- the film formation chamber 23 also contains Ar gas (Ar + O 2 ) containing Ar gas or O 2 gas, so that each of H 2 gas, H 2 O gas (water vapor), and Ar + O 2 gas is separated.
- Ar gas Ar + O 2
- the refractive index or specific resistance (conductivity) of the obtained transparent film can be controlled.
- the H 2 gas and / or H 2 O gas (water vapor) atmosphere is created in the film forming chamber 23, so that the specific resistance (conductivity) of the obtained transparent film 12b also changes. Therefore, when forming the transparent film 12b that requires conductivity, it is necessary to form the film in an H 2 gas atmosphere.
- either an H 2 gas atmosphere or an H 2 O gas (water vapor) atmosphere is used.
- the low refractive index transparent film 12b formed in an atmosphere of H 2 gas and H 2 O gas (H 2 + H 2 O) has a low specific resistance, it can also serve as a transparent conductive film. Therefore, the transparent conductive film 13 is unnecessary.
- the transparent film 12b having a low refractive index formed in an H 2 O gas atmosphere has a high specific resistance, and therefore the transparent conductive film 13 is necessary.
- a method for forming the transparent conductive film 13 on the transparent film 12b having a high specific resistance and a low refractive index will be described.
- the temperature of the substrate 26 is set within a temperature range of 100 ° C. to 600 ° C. using the zinc oxide target 27 and the method for forming the antireflection film. did. Further, a sputtering gas such as Ar is introduced by the sputtering gas introduction unit 15a, and any two or three of the hydrogen gas introduction unit 15b to the water vapor introduction unit 15d are used to generate hydrogen gas, oxygen gas, and water vapor. Two or three selected gases are introduced.
- a sputtering gas such as Ar is introduced by the sputtering gas introduction unit 15a, and any two or three of the hydrogen gas introduction unit 15b to the water vapor introduction unit 15d are used to generate hydrogen gas, oxygen gas, and water vapor. Two or three selected gases are introduced.
- the ratio R (P H2 / P O2 ) between the partial pressure of hydrogen gas (P H2 ) and the partial pressure of oxygen gas (P O2 ) is expressed by the following equation (3 ),
- the atmosphere in the film formation chamber 23 is controlled so as to include a reactive gas having a hydrogen gas concentration that is five times or more the oxygen gas concentration.
- R P H2 / P O2 ⁇ 5
- a transparent conductive film having a specific resistance of 1.0 ⁇ 10 3 ⁇ ⁇ cm or less is obtained.
- the ratio R (P H2 / P H2O ) between the hydrogen gas partial pressure (P H2 ) and the water vapor (gas) partial pressure (P H2O ) is
- the atmosphere in the film formation chamber 23 is controlled so as to include a reactive gas having a hydrogen gas concentration that is five times or more the water vapor concentration.
- R P H2 / P H2O ⁇ 5
- a transparent conductive film having a specific resistance of 1.0 ⁇ 10 3 ⁇ ⁇ cm or less is obtained.
- a sputtering voltage of 340 V or less preferably a sputtering voltage in which a high frequency voltage is superimposed on a DC voltage is applied to the target 27 by the power source 34.
- plasma is generated on the substrate 26, and ions of a sputtering gas such as Ar excited by the plasma collide with the target 27.
- AZO aluminum-added zinc oxide
- GZO gallium-added zinc oxide
- the like constituting the zinc oxide-based material are released, and a transparent conductive film made of the zinc oxide-based material is formed on the transparent film 12b.
- the atmosphere in the film forming chamber 23 is a reactive gas atmosphere composed of two or three kinds selected from the group of hydrogen gas, oxygen gas, and water vapor. Therefore, if the sputtering method is performed in this reactive gas atmosphere, the number of oxygen vacancies in the zinc oxide crystal is controlled, and the obtained transparent conductive film becomes a film having a desired conductivity. The specific resistance also decreases, and a desired specific resistance value is obtained.
- the concentration of each gas in the film forming chamber 23 when the hydrogen gas concentration is 5 times or more the oxygen gas concentration, a reactive gas atmosphere in which the ratio of hydrogen gas to oxygen gas is harmonized is obtained. Therefore, if the sputtering method is performed in this reactive gas atmosphere, the number of oxygen vacancies in the zinc oxide crystal is highly controlled, and the obtained transparent conductive film becomes a film having a desired conductivity. The specific resistance of the film is also reduced to the equivalent of the ITO film, and a desired specific resistance value is obtained. Moreover, in the obtained transparent conductive film, there is no possibility that metallic luster may arise and transparency with respect to visible light is maintained. In this way, the substrate 26 on which the zinc oxide-based transparent conductive film 13 having a low specific resistance and good transparency to visible light is formed is obtained.
- An aluminum-added zinc oxide (AZO) target having a size of 5 inches ⁇ 16 inches and 2% by mass of Al 2 O 3 was prepared. This target was fixed with a brazing material to a parallel plate type cathode 32 to which a direct current (DC) voltage was applied.
- the alkali-free glass substrate is carried into the preparation / removal chamber 22, the inside of the preparation / removal chamber 22 is roughly evacuated by the roughing exhaust unit 24, and then the alkali-free glass substrate is subjected to high vacuum by the high vacuum exhaust unit 33.
- the drawn film forming chamber 23 was loaded. Thereafter, an alkali-free glass substrate was placed opposite to the AZO target.
- the pressure in the film forming chamber 23 was controlled to be 5 mTorr. Then, by introducing a partial pressure of the H 2 O gas is 5 ⁇ 10 -5 Torr, the partial pressure of O 2 gas is 1 ⁇ 10 -5 Torr, the gas to be one of the film forming chamber 23, H 2 In an atmosphere of O gas or O 2 gas, power of 1 kW was applied to the cathode 32 by the power source 34. As a result, the AZO target attached to the cathode 32 was sputtered to deposit an AZO film on the alkali-free glass substrate.
- FIG. 5 is a diagram showing an effect caused by H 2 O gas (water vapor) in non-heated film formation.
- symbol A indicates the transmittance of the zinc oxide-based transparent conductive film when no reactive gas is introduced
- symbol B is introduced so that the partial pressure of H 2 O gas is 5 ⁇ 10 ⁇ 5 Torr.
- the transmittance of the zinc oxide-based transparent conductive film is shown
- the symbol C shows the transmittance of the zinc oxide-based transparent conductive film when introduced so that the partial pressure of O 2 gas becomes 1 ⁇ 10 ⁇ 5 Torr. Yes.
- the film thickness of the transparent conductive film was 207.9 nm, and the specific resistance was 1576 ⁇ cm.
- the film thickness of the transparent conductive film was 204.0 nm, and the specific resistance was 64464 ⁇ cm.
- O 2 gas was introduced, the film thickness of the transparent conductive film was 208.5 nm and the specific resistance was 2406 ⁇ cm.
- the peak wavelength of transmittance can be changed without changing the film thickness by introducing H 2 O gas. Further, the transmittance was also increased as a whole as compared with Code A in which no reactive gas was introduced. In addition, when H 2 O gas is introduced, the specific resistance is high and the resistance deterioration is large, but since the transmittance is high, it can be applied to an optical member that does not require low resistance such as an antireflection film. I understood. Furthermore, light having a laminated structure (a laminated structure composed of a plurality of films having different refractive indexes) in which the refractive index is changed by repeatedly introducing the H 2 O gas without introducing and introducing or changing the amount of the introduced film. It turns out that the device can be obtained with one target.
- a laminated structure a laminated structure composed of a plurality of films having different refractive indexes
- FIG. 6 is a diagram illustrating a simulation result of the reflectance of the antireflection film that has been optically designed using the refractive index calculated from the spectra of B and C in FIG.
- n 1.91.
- n 1.64.
- a transparent film having a high refractive index with a refractive index (n) of 1.91 is formed on the glass substrate so that the film thickness (d) is 64.0 nm.
- a low refractive index transparent film having a refractive index (n) of 1.64 was formed so as to have a film thickness (d) of 89.5 nm.
- FIG. 6 it can be seen that when the wavelength ( ⁇ ) is 550 nm, the reflectance of the antireflection film is 0.167%, and the multilayered antireflection film is continuously formed using one target. It was found that the film can be made.
- FIG. 7 is a diagram showing an effect caused by H 2 O gas (water vapor) in the thermal film formation in which the substrate temperature is 250 ° C.
- symbol A indicates the transmittance of the zinc oxide-based transparent conductive film when no reactive gas is introduced
- symbol B is introduced so that the partial pressure of H 2 O gas is 5 ⁇ 10 ⁇ 5 Torr.
- the transmittance of the zinc oxide-based transparent conductive film is shown, and the symbol C shows the transmittance of the zinc oxide-based transparent conductive film when introduced so that the partial pressure of O 2 gas becomes 1 ⁇ 10 ⁇ 5 Torr. Yes.
- the cathode a parallel plate type cathode to which a direct current (DC) voltage was applied was used.
- the film thickness of the transparent conductive film was 201.6 nm, and the specific resistance was 766 ⁇ cm.
- the film thickness of the transparent conductive film was 183.0 nm and the specific resistance was 6625 ⁇ cm.
- O 2 gas was introduced, the film thickness of the transparent conductive film was 197.3 nm and the specific resistance was 2214 ⁇ cm.
- H 2 O gas is replaced with H 2 gas, and a parallel plate type cathode capable of supplying power by superimposing a direct current (DC) voltage and a radio frequency (RF) voltage is used. Sputtering power superimposed with high frequency (RF) power was applied to the cathode 12.
- An AZO film was deposited on a non-alkali glass substrate in the same manner as described above except that constant current control was performed with a current amount of 4A.
- FIG. 8 is a diagram showing an effect resulting from the case where H 2 gas and O 2 gas are introduced at the same time in the heating film formation in which the substrate temperature is 250 ° C.
- symbol A indicates the permeation of the zinc oxide-based transparent conductive film when the H 2 gas partial pressure is 15 ⁇ 10 ⁇ 5 Torr and the O 2 gas partial pressure is 1 ⁇ 10 ⁇ 5 Torr.
- symbol B represents the transmittance of the zinc oxide-based transparent conductive film when introduced so that the partial pressure of O 2 gas becomes 1 ⁇ 10 ⁇ 5 Torr.
- the film thickness of the transparent conductive film was 211.1 nm.
- the film thickness of the transparent conductive film was 208.9 nm.
- the peak wavelength is shifted more than the shift of the peak wavelength due to the film thickness interference as compared with the case where only the O 2 gas is introduced.
- permeability is also improving.
- FIG. 9 is a diagram showing an effect resulting from the simultaneous introduction of H 2 gas and O 2 gas in the thermal film formation where the substrate temperature is 250 ° C.
- the partial pressure of O 2 gas is 1 ⁇ 10 ⁇ 5 Torr.
- the film thickness of the transparent conductive film was approximately 200 nm. According to this figure, the specific resistance sharply decreases when the pressure of H 2 gas is from 0 Torr to 2.0 ⁇ 10 ⁇ 5 Torr, but when the pressure exceeds 2.0 ⁇ 10 ⁇ 5 Torr, the specific resistance is stabilized. I knew it would come.
- the specific resistance of the transparent conductive film was 422 ⁇ ⁇ cm. Therefore, it was found that even when H 2 gas and O 2 gas were introduced at the same time, the specific resistance was hardly deteriorated. .
- a transparent conductive film used for a display or the like is required to have low resistance in addition to high transmittance in the visible light region.
- the transparent electrode of a general display is required to be 1.0 ⁇ 10 3 ⁇ ⁇ cm or less.
- FIG. 10 is a diagram illustrating an effect caused by H 2 gas in non-heated film formation.
- symbol A indicates the transmittance of the zinc oxide-based transparent conductive film when introduced so that the partial pressure of H 2 gas is 3 ⁇ 10 ⁇ 5 Torr
- symbol B indicates the partial pressure of O 2 gas. 1.
- the transmittance of the zinc oxide-based transparent conductive film when introduced so as to be 1.125 ⁇ 10 ⁇ 5 Torr is shown.
- As the cathode a counter-type cathode to which a direct current (DC) voltage was applied was used.
- DC direct current
- the film thickness of the transparent conductive film was 191.5 nm and the specific resistance was 913 ⁇ cm.
- the film thickness of the transparent conductive film was 206.4 nm and the specific resistance was 3608 ⁇ cm.
- FIG. 10 it was found that the peak wavelength of transmittance can be changed without changing the film thickness by introducing H 2 gas. Further, transmittance was found to be higher than the case of introducing O 2 gas.
- the process of introducing H 2 gas by optimizing the H 2 gas introduction rate, zinc oxide-based transparent conductive film having a high transmittance and low specific resistance could be obtained.
- the sputtering method is performed in a reactive gas atmosphere containing two or three kinds selected from the group of hydrogen gas, oxygen gas, and water vapor.
- the zinc oxide-based antireflection film 12 having excellent transparency and the zinc oxide-based transparent conductive film 13 having low specific resistance and excellent transparency to visible light can be easily formed.
- the gas introduction unit 35 introduces a sputtering gas introduction unit 35a for introducing a sputtering gas such as Ar, a hydrogen gas introduction unit 35b for introducing hydrogen gas, and an oxygen gas.
- An oxygen gas introduction part 35c for introducing water vapor and a water vapor introduction part 35d for introducing water vapor are used.
- FIG. 11 is a cross-sectional view showing the main part of a film forming chamber of an inter-back magnetron sputtering apparatus (film forming apparatus) used in the touch panel manufacturing method according to the second embodiment of the present invention.
- the magnetron sputtering apparatus 41 according to the second embodiment has a sputtering cathode mechanism (target holding unit) 42 that holds a target 27 made of zinc oxide based material on the second side surface 23b of the film forming chamber 23 and generates a desired magnetic field. It differs from the sputtering apparatus 21 of 1st Embodiment by the point provided in this.
- the sputter cathode mechanism 42 includes a back plate 43 to which the target 27 is bonded (fixed) via a brazing material or the like, and a magnetic circuit (magnetic field generating unit) 44 disposed along the back surface of the back plate 43.
- the magnetic circuit 44 has a function of generating a horizontal magnetic field on the surface of the target 27.
- a plurality of magnetic circuit units (two in FIG. 11) 44a and 44b are connected and integrated by a bracket 45.
- Each of the magnetic circuit units 44a and 44b includes a first magnet 46 and a second magnet 47, and a yoke 48 on which the magnets 46 and 47 are mounted. At a position close to the back plate 43 (position facing the back plate 43), the polarity of the first magnet 46 and the polarity of the second magnet 47 are different from each other.
- a magnetic field indicated by a magnetic force line 49 is generated by a first magnet 46 and a second magnet 47 having different polarities.
- a position 50 where the vertical magnetic field is 0 (the horizontal magnetic field is maximum) is generated.
- the high-density plasma is generated at the position 50, so that the film forming speed is improved.
- the maximum value of the horizontal magnetic field intensity on the surface of the target 27 is preferably 600 gauss or more.
- the discharge voltage can be lowered by setting the maximum value of the horizontal magnetic field strength to 600 gauss or more.
- the film forming apparatus for the transparent conductive film of the second embodiment can achieve the same effects as the sputtering apparatus of the first embodiment.
- a sputtering cathode mechanism 42 that generates a desired magnetic field is provided on the second side surface 23b of the film forming chamber 23 in a vertical type, the sputtering voltage is set to 340 V or less, and the maximum horizontal magnetic field strength on the surface of the target 27 is set to 600 gauss or more.
- This zinc oxide-based antireflection film or transparent conductive film is hardly oxidized even after annealing at a high temperature after film formation, can suppress a decrease in transmittance or an increase in specific resistance, and has excellent heat resistance.
- a zinc oxide-based antireflection film or transparent conductive film can be obtained.
- the present invention can reduce the specific resistance of a zinc oxide-based transparent conductive film and maintain transparency to visible light, even when an optical film such as an antireflection film is provided.
- a transparent conductive film or an optical film can be formed by one apparatus, and a multilayer optical film or a multilayer optical film and a transparent conductive film can be formed by changing the type of gas introduced using one type of target. It is useful for the manufacturing method of the touch panel which can form film.
- Touch panel 2 Liquid crystal display (LCD) 2a Image display surface 3 Spacer 4 Drive circuit 5 Detection circuit 6 Insulating spacer 11 Transparent substrate 11a Surface (main surface) 12 Antireflection film (optical film) 12a Transparent film with high refractive index 12b Transparent film with low refractive index 13 Transparent conductive film 14 Plastic film (transparent substrate) 14a Front surface 14b Back surface (main surface) DESCRIPTION OF SYMBOLS 15 Hard coat film
- membrane 16 Transparent electrically conductive film 17
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Position Input By Displaying (AREA)
Abstract
Description
本願は、2008年7月9日に出願された特願2008-179372号に基づき優先権を主張し、その内容をここに援用する。
このタッチパネルの一種として、抵抗膜方式タッチパネルが知られている。この抵抗膜方式タッチパネルにおいては、主面に透明導電膜が成膜された一対の透明基板が、これらの透明導電膜が互いに対向するように所定の間隔をおいて対向して配置されている。また、これらの透明導電膜の間には、複数個の絶縁性スペーサをマトリックス状に配置されている。このタッチパネルは、視認側の透明基板上の所望の位置が表示面に向けて押圧された際に、この所望の位置にて一対の透明導電膜を電気的に接続し、この所望の位置の情報を電気信号として外部へ出力する機能を有する。
このZnO系材料は、大型基板への均一成膜が可能なスパッタリングに適している。成膜装置においては、ITO等のIn2O3系材料のターゲットをZnO系材料のターゲットに変更することで、ZnOを成膜することが可能である。また、ZnO系材料は、In2O3系材料のように絶縁性の高い低級酸化物(InO)を含まないので、スパッタリングでの異常が発生し難い。
ところで、SiO及びTiOの積層構造を、酸化物ターゲットを使用してスパッタ法により成膜する場合、これらの酸化物のターゲットの抵抗が高いために、RF電源を使用してスパッタ法を行っていた。また、上記の積層構造をDC電源もしくはAC電源が使用できるSiとTiのメタルターゲットを使用して成膜する場合、多量の酸化性ガスを導入しながらスパッタする、いわゆるリアクティブスパッタにより積層膜を成膜していた。
そこで、ZnO系の透明導電膜の比抵抗を所望の値まで下げるために、スパッタ法を行う際にチャンバー内に還元ガスとして水素ガスを導入し、この還元雰囲気中にて成膜する方法が考えられている。
しかし、この場合、得られた透明導電膜の比抵抗は確かに低下するが、その表面に僅かながら金属光沢が生じてしまい、透過率が低下するという問題点があった。
また、RF電源を用いる装置において電源コストが高くなる傾向があり、場合によっては装置が複雑化することもあった。
さらに、従来の成膜方法では、SiOとTiOの2種類のターゲット、もしくはSiとTiの2種類のターゲットが必要であるために、2種類のスパッタ装置が必要であった。
また、反射防止膜等の光学膜を設けた場合においても、透明導電膜又は光学膜を1つの装置にて成膜することができるタッチパネルの製造方法及び成膜装置を提供することを目的とする。
また、従来の透明導電膜又は光学膜の成膜速度以上の成膜速度にて成膜することができるタッチパネルの製造方法及び成膜装置を提供することを目的とする。
R=PH2/PO2≧5 ……(1)
具体的に、本発明者等は、上記の条件下にてスパッタ法を行えば、酸化亜鉛系透明導電膜の比抵抗を低下させることができ、可視光線に対する透明性を維持することができることを見出し、さらに、上記と同様にして酸化亜鉛系の反射防止膜等の光学膜を成膜すれば、金属光沢が生じる虞が無く、可視光線に対する透明性を維持することができることを見出した。
R=PH2/PO2≧5 ……(1)
本発明の第1~第4態様の製造方法においては、前記スパッタ法を行う際に用いるスパッタ電圧は、340V以下であることが好ましい。
本発明の第1~第4態様の製造方法においては、前記スパッタ法を行う際に用いるスパッタ電圧は、直流電圧に高周波電圧が重畳された電圧であることが好ましい。
本発明の第1~第4態様の製造方法においては、前記ターゲットの表面における水平磁界の強度の最大値は、600ガウス以上であることが好ましい。
本発明の第1~第4態様の製造方法においては、前記酸化亜鉛系材料は、アルミニウム添加酸化亜鉛又はガリウム添加酸化亜鉛であることが好ましい。
さらに、DC電源もしくはAC電源を使用することが可能になり、かつ、従来の成膜速度以上にて成膜することが可能になる。
この成膜装置では、直流電源と高周波電源とを併用することにより、スパッタ電圧を低下させることが可能になり、結晶格子の整った酸化亜鉛系の透明導電膜又は光学膜を成膜することが可能になる。この成膜装置によれば、比抵抗が低く、金属光沢が生じることがなく、可視光線に対する透明性を維持可能な透明導電膜を得ることができる。また、金属光沢が生じることがなく、可視光線に対する透明性を維持可能な光学膜を得ることができる。
この成膜装置においては、ターゲット保持部に、ターゲットの表面に強度の最大値が600ガウス以上の水平磁界を発生させる磁界発生部が設けられているので、ターゲットの表面の垂直磁界が0(水平磁界が最大)となる位置に高密度プラズマが生成する。これにより、結晶格子の整った酸化亜鉛系の透明導電膜又は光学膜を成膜することが可能になる。
したがって、比抵抗が低く、可視光線に対する透明性に優れた酸化亜鉛系の透明導電膜を容易に成膜することができる。
したがって、比抵抗が低く、可視光線に対する透明性に優れた酸化亜鉛系の透明導電膜を容易に成膜することができる。
したがって、可視光線に対する透明性に優れた酸化亜鉛系の光学膜を容易に成膜することができる。
したがって、可視光線に対する透明性に優れた酸化亜鉛系の光学膜を容易に成膜することができる。
したがって、比抵抗が低く、可視光線に対する透明性に優れた酸化亜鉛系の透明導電膜を容易に成膜することができる。
したがって、従来の成膜装置の一部を改良するだけで、比抵抗が低く、可視光線に対する透明性に優れた酸化亜鉛系の透明導電膜、あるいは可視光線に対する透明性に優れた酸化亜鉛系の光学膜を、酸化亜鉛系材料からなるターゲットを用いて1つの装置により容易に成膜することができる。
さらに、DC電源もしくはAC電源を使用することができ、かつ、従来の成膜速度以上にて成膜することができる。
本実施形態においては、発明の趣旨をより良く理解させるために具体的に説明するが、本実施形態は、本発明の技術範囲を限定するものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
(タッチパネル)
図1は、本発明の第1の実施形態の抵抗膜方式のタッチパネルの主要部を示す断面図である。
このタッチパネル1は、液晶表示装置(LCD)2の画像表示面2aにスペーサ3を介して設けられており、下部電極である駆動回路4と、上部電極である検出回路5と、駆動回路4と検出回路5との間に配置された複数個の絶縁性スペーサ6とにより構成されている。
検出回路5は、ポリエチレンテレフタレート(PET)等からなるプラスチックフィルム(透明基板)14の表面14aにハードコート膜15が成膜され、その裏面(主面)14bに透明導電膜16が成膜されて構成されている。
これら駆動回路4と検出回路5とは、透明導電膜13、16が互いに対向するように所定の間隔をおいて配置されている。これら透明導電膜13、16は接着剤17を介して接着固定され、これらの透明導電膜13、16の間には、透明導電膜13、16の間の距離を維持するための絶縁性スペーサ6が複数個、マトリックス状に配置されている。
反射防止膜12の積層構造としては、例えば、酸化アルミニウム(Al2O3)を添加したアルミニウム添加酸化亜鉛(AZO)、酸化ガリウム(Ga2O3)を添加したガリウム添加酸化亜鉛(GZO)、酸化ケイ素(SiO2)、酸化チタン(TiO2)等を主成分として用いられた膜が積層された積層構造が好適に用いられる。
また、屈折率が例えば1.64等の低屈折率の透明膜12bは、上記のアルミニウム添加酸化亜鉛(AZO)をターゲットとして、水素(H2)ガス雰囲気または水蒸気(H2O)雰囲気下にて成膜することにより得られる。
さらに、AZO膜を、ZnO-Al2O3をターゲットとし、酸素もしくは水素原子を含むガスを導入してスパッタする場合、ターゲットに酸素が含まれているため、反応性ガスの導入量は、Si又はTiのターゲットを使用するリアクティブスパッタ法の場合に比べ少ない。
図3は、第1の実施形態のタッチパネルの製造方法に用いられるスパッタ装置(成膜装置)を示す概略構成図、図4は図3のスパッタ装置における成膜室の主要部を示す断面図である。
このスパッタ装置21は、インターバック式のスパッタ装置であり、例えば、無アルカリガラス基板(図示せず)等の基板を搬入又は搬出する仕込み/取り出し室22と、基板上に酸化亜鉛系透明導電膜を成膜する成膜室(真空容器)23とを含む。
仕込み/取出し室22には、この室内を粗く真空引きするロータリーポンプ等の粗引き排気部24が設けられ、この室内には、基板を保持・搬送するための基板トレイ25が移動可能に配置されている。
電源34は、ターゲット27に直流電圧に高周波電圧が重畳されたスパッタ電圧を印加する機能を有し、直流(DC)電源と高周波(RF)電源(図示略)とを備えている。
ガス導入部35は、Ar等のスパッタガスを導入するスパッタガス導入部35aと、水素ガスを導入する水素ガス導入部35bと、酸素ガスを導入する酸素ガス導入部35cと、水蒸気を導入する水蒸気導入部35dとを備えている。
ここでは、透明基板11として無アルカリガラス基板を用い、反射防止膜12として、アルミニウム添加酸化亜鉛(AZO)、ガリウム添加酸化亜鉛(GZO)等の酸化亜鉛系材料からなる2層構造の膜を用いた場合について説明する。
(a)高屈折率透明膜の成膜
高屈折率の透明膜12aを成膜するために、酸化亜鉛系のターゲット27をカソード32にロウ材等でボンディングして固定する。
ここで、ターゲット材としては、酸化亜鉛系材料、例えば、酸化アルミニウム(Al2O3)が0.1~10質量%添加されたアルミニウム添加酸化亜鉛(AZO)、酸化ガリウム(Ga2O3)が0.1~10質量%添加されたガリウム添加酸化亜鉛(GZO)等が挙げられる。
このスパッタ電圧は340V以下であることが好ましい。放電電圧を下げることにより、結晶格子の整った酸化亜鉛系の透明膜を成膜することが可能になる。
このスパッタ電圧は、直流電圧に高周波電圧が重畳された電圧であることが好ましい。直流電圧に高周波電圧が重畳されることで、放電電圧をさらに下げることができる。
スパッタ電圧印加により、基板26上にプラズマが発生し、このプラズマにより励起されたAr等のスパッタガスのイオンがターゲット27に衝突し、このターゲット27からアルミニウム添加酸化亜鉛(AZO)、ガリウム添加酸化亜鉛(GZO)等の酸化亜鉛系材料を構成する原子が放出し、基板26上に酸化亜鉛系材料からなる透明膜が成膜される。
これは、成膜室23に、水素ガス導入部35bによるH2ガスの導入、水蒸気導入部35dによるH2Oガス(水蒸気)の導入、のいずれか一方、あるいは双方を行うことにより、実現することができる。
成膜室23内に酸化亜鉛系のターゲット27を残したままの状態で、この成膜室23に、水素ガス導入部35bによるH2ガスの導入、水蒸気導入部35dによるH2Oガス(水蒸気)の導入、のいずれか一方、あるいは双方を行うことにより、この成膜室23内の雰囲気がH2ガスおよび/またはH2Oガス(水蒸気)を含むように制御される。
ここでは、水素ガス導入部35b又は水蒸気導入部35dを用いて、成膜室23にH2ガスおよび/またはH2Oガス(水蒸気)を導入する。
なお、この成膜室23内には、ArガスまたはO2ガスを含むArガス(Ar+O2)も含まれているので、H2ガス、H2Oガス(水蒸気)、Ar+O2ガス各々の分圧を制御することで、得られる透明膜の屈折率又は比抵抗(導電率)を制御することができる。
R=PH2/PO2≧5 ……(1)
また、反応性ガス雰囲気がR=PH2/PO2≧5を満たすことで、屈折率が1.6前後の透明膜12bが得られる。
R=PH2/PH2O≧5 ……(2)
また、反応性ガス雰囲気がR=PH2/PH2O≧5を満たすことで、屈折率が1.6前後の透明膜12bが得られる。
このように、H2ガスおよびH2Oガス(H2+H2O)雰囲気下で成膜された低屈折率の透明膜12bは、比抵抗が低いので透明導電膜を兼ねることができる。したがって、透明導電膜13は不要である。
次に、高比抵抗かつ低屈折率の透明膜12b上に透明導電膜13を成膜する方法について説明する。
透明導電膜13を成膜する場合、上記の酸化亜鉛系のターゲット27を用い、上記の反射防止膜の成膜方法と同様に、基板26の温度を100℃~600℃の温度範囲内に設定した。また、スパッタガス導入部15aによりAr等のスパッタガスを導入し、水素ガス導入部15b~水蒸気導入部15dのうちいずれか2つまたは3つを用いて、水素ガス、酸素ガス、水蒸気の群から選択される2種または3種のガスを導入する。
R=PH2/PO2≧5 ……(3)
また、反応性ガス雰囲気がR=PH2/PO2≧5を満たすことで、比抵抗1.0×103μΩ・cm以下の透明導電膜が得られる。
R=PH2/PH2O≧5 ……(4)
また、反応性ガス雰囲気がR=PH2/PH2O≧5を満たすことで、比抵抗1.0×103μΩ・cm以下の透明導電膜が得られる。
これにより、基板26上にプラズマが発生し、このプラズマにより励起されたAr等のスパッタガスのイオンがターゲット27に衝突し、このターゲット27からアルミニウム添加酸化亜鉛(AZO)、ガリウム添加酸化亜鉛(GZO)等の酸化亜鉛系材料を構成する原子が放出し、透明膜12b上に酸化亜鉛系材料からなる透明導電膜が成膜される。
また、得られた透明導電膜においては、金属光沢が生じる虞がなく、可視光線に対する透明性が維持される。
このようにして、比抵抗が低くかつ可視光線に対する透明性が良好な酸化亜鉛系の透明導電膜13が形成された基板26が得られる。
5インチ×16インチの大きさを有し、Al2O3が2質量%添加されたアルミニウム添加酸化亜鉛(AZO)ターゲットを準備した。このターゲットを直流(DC)電圧を印加する平行平板型のカソード32にロウ材で固定した。
次いで、仕込み/取り出し室22に無アルカリガラス基板を搬入し、仕込み/取り出し室22内を粗引き排気部24で粗く真空引きし、次いで、この無アルカリガラス基板を高真空排気部33で高真空引きされた成膜室23に搬入した。その後、無アルカリガラス基板をAZOターゲットに対向配置させた。
また、H2Oガスを導入した場合、透明導電膜の膜厚は204.0nm、比抵抗は64464μΩcmであった。
また、O2ガスを導入した場合、透明導電膜の膜厚は208.5nm、比抵抗は2406μΩcmであった。
また、H2Oガスを導入した場合、比抵抗が高く、抵抗劣化が大きくなるが、透過率が高いことから、反射防止膜等のような低抵抗が要求されない光学部材に適用可能であることが分かった。
さらに、H2Oガスの無導入と導入もしくは導入量を変化させた成膜条件を繰り返し行うことで、屈折率が変化した積層構造(屈折率が異なる複数の膜からなる積層構造)を有する光デバイスを1枚のターゲットで得られることが分かった。
ここでは、図5中の符号Cのスペクトルから求められた波長のピーク値(λ)796nm及び膜厚(d)208.5nmの各値を、簡易的に式「2nd=mλ」(式中、dは膜厚、λは波長、n、mは整数)に代入した。m=1である場合の高屈折率の透明膜の屈折率(n)を算出したところ、n=1.91であった。
一方、図5中の符号Bのスペクトルから求められた波長のピーク値(λ)668nm及び膜厚(d)204.0nmの各値を、簡易的に式「2nd=mλ」(式中、dは膜厚、λは波長、n、mは整数)に代入した。m=1である場合の低屈折率の透明膜の屈折率(n)を算出したところ、n=1.64であった。
この図6によれば、波長(λ)が550nmの場合、反射防止膜の反射率が0.167%であることが分かり、積層構造の反射防止膜を1つのターゲットを用いて連続して成膜することができることが分かった。
図7は、基板温度が250℃である加熱成膜におけるH2Oガス(水蒸気)に起因する効果を示す図である。図7において、符号Aは反応性ガスを導入しない場合の酸化亜鉛系透明導電膜の透過率を示し、符号BはH2Oガスの分圧が5×10-5Torrになるように導入した場合の酸化亜鉛系透明導電膜の透過率を示し、符号CはO2ガスの分圧が1×10-5Torrになるように導入した場合の酸化亜鉛系透明導電膜の透過率を示している。なお、カソードとしては、直流(DC)電圧を印加する平行平板型のカソードを用いた。
また、H2Oガスを導入した場合、透明導電膜の膜厚は183.0nm、比抵抗は6625μΩcmであった。
また、O2ガスを導入した場合、透明導電膜の膜厚は197.3nm、比抵抗は2214μΩcmであった。
H2Oガスを導入した場合、膜厚が若干薄くなっているが、膜厚の干渉によるピーク波長のシフト以上に、ピーク波長がシフトしていることから、基板温度を250℃に加熱した場合においても、無加熱と同様の効果が得られることが分かった。
また、O2ガスのみを導入した場合、透明導電膜の膜厚は208.9nmであった。
図8によれば、H2ガスとO2ガスを同時に導入した場合、O2ガスのみを導入した場合と比べて、膜厚の干渉によるピーク波長のシフト以上に、ピーク波長がシフトしていることが分かった。また、透過率も向上していることが分かった。
この図によれば、H2ガスの圧力が0Torrから2.0×10-5Torrまでは比抵抗が急激に低下するが、2.0×10-5Torrを超えると比抵抗が安定してくることが分かった。
同一条件で反応性ガスを導入しない場合の透明導電膜の比抵抗は422μΩ・cmであるから、H2ガスとO2ガスを同時に導入した場合においても、比抵抗の劣化が小さいことが分かった。
また、O2ガスを導入した場合、透明導電膜の膜厚は206.4nm、比抵抗は3608μΩcmであった。
図10によれば、H2ガスを導入したことにより、膜厚を変えずに透過率のピーク波長を変更することができることが分かった。
また、透過率もO2ガスを導入した場合と比べて高いことが分かった。
以上により、H2ガスを導入したプロセスは、H2ガス導入量を最適化することにより、高透過率かつ低い比抵抗の酸化亜鉛系透明導電膜が得られることが分かった。
したがって、従来の成膜装置の一部を改良するだけで、酸化亜鉛系の反射防止膜又は透明導電膜を成膜することができる。
図11は、本発明の第2の実施形態のタッチパネルの製造方法に用いられるインターバック式のマグネトロンスパッタ装置(成膜装置)の成膜室の主要部を示す断面図である。
第2の実施形態のマグネトロンスパッタ装置41は、成膜室23の第2側面23bに酸化亜鉛系材料のターゲット27を保持し所望の磁界を発生するスパッタカソード機構(ターゲット保持部)42を縦型に設けた点で、第1の実施形態のスパッタ装置21と異なる。
この磁気回路44は、ターゲット27の表面に水平磁界を発生させる機能を有する。磁気回路44においては、複数の磁気回路ユニット(図11では2つ)44a、44bがブラケット45により連結されて一体化されている。磁気回路ユニット44a、44bの各々は、第1磁石46及び第2磁石47と、磁石46,47を装着するヨーク48とを備えている。背面プレート43に近い位置(背面プレート43に対向する位置)において、第1磁石46の極性と第2磁石47の極性は、相互に異なっている。
このターゲット27の表面における水平磁界の強度の最大値は、600ガウス以上であることが好ましい。水平磁界の強度の最大値を600ガウス以上に設定することで放電電圧を下げることができる。
しかも、成膜室23の第2側面23bに所望の磁界を発生するスパッタカソード機構42を縦型に設け、スパッタ電圧を340V以下とし、ターゲット27表面における水平磁界強度の最大値を600ガウス以上とすることにより、結晶格子の整った酸化亜鉛系の反射防止膜又は透明導電膜を成膜することができる。
この酸化亜鉛系の反射防止膜又は透明導電膜は、成膜後に高温でアニール処理を行っても酸化され難く、透過率の低下又は比抵抗の増加を抑制することができ、耐熱性に優れた酸化亜鉛系の反射防止膜又は透明導電膜を得ることができる。
2 液晶表示装置(LCD)
2a 画像表示面
3 スペーサ
4 駆動回路
5 検出回路
6 絶縁性スペーサ
11 透明基板
11a 表面(主面)
12 反射防止膜(光学膜)
12a 高屈折率の透明膜
12b 低屈折率の透明膜
13 透明導電膜
14 プラスチックフィルム(透明基板)
14a 表面
14b 裏面(主面)
15 ハードコート膜
16 透明導電膜
17 接着剤
21 スパッタ装置
22 仕込み/取り出し室
23 成膜室
24 粗引き排気部
25 基板トレイ
26 基板
27 ターゲット
31 ヒーター
32 カソード
33 高真空排気部
34 電源
35 ガス導入部
35a スパッタガス導入部
35b 水素ガス導入部
35c 酸素ガス導入部
35d 水蒸気導入部
41 マグネトロンスパッタ装置
42 スパッタカソード機構
43 背面プレート
44 磁気回路
44a、44b 磁気回路ユニット
45 ブラケット
46 第1磁石
47 第2磁石
48 ヨーク
49 磁力線
50 垂直磁界が0となる位置
Claims (12)
- 透明導電膜が成膜された主面を有する透明基板を含むタッチパネルの製造方法であって、
前記透明基板の前記主面上に、水素ガス、酸素ガス、水蒸気の群から選択される2種または3種を含む反応性ガス雰囲気中にて酸化亜鉛系材料からなるターゲットを用いてスパッタ法を行うことにより、前記透明導電膜を成膜することを特徴とするタッチパネルの製造方法。 - 透明導電膜が成膜された主面を有する第1透明基板及び第2透明基板を含み、前記第1透明基板の透明導電膜と前記第2透明基板の前記透明導電膜が互いに対向するようにかつ所定の間隔で離間するように、前記第1透明基板及び前記第2透明基板が対向して配置されているタッチパネルの製造方法であって、
前記第1透明基板及び前記第2透明基板のうちいずれか一方または双方の基板の前記主面上に、水素ガス、酸素ガス、水蒸気の群から選択される2種または3種を含む反応性ガス雰囲気中にて酸化亜鉛系材料からなるターゲットを用いてスパッタ法を行うことにより、前記透明導電膜を成膜する
ことを特徴とするタッチパネルの製造方法。 - 透明導電膜が成膜された主面を有する第1透明基板及び第2透明基板を含み、前記第1透明基板の透明導電膜と前記第2透明基板の前記透明導電膜が互いに対向するようにかつ所定の間隔で離間するように、前記第1透明基板及び前記第2透明基板が対向して配置されているタッチパネルの製造方法であって、
前記第1透明基板及び前記第2透明基板のうちいずれか一方の主面上に、水素ガス、酸素ガス、水蒸気の群から選択される2種または3種を含む反応性ガス雰囲気中にて酸化亜鉛系材料からなるターゲットを用いてスパッタ法を行うことにより、光学膜を成膜し、
次いで、前記光学膜上に前記透明導電膜を成膜する
ことを特徴とするタッチパネルの製造方法。 - 透明導電膜が成膜された主面を有する第1透明基板及び第2透明基板を含み、前記第1透明基板の透明導電膜と前記第2透明基板の前記透明導電膜が互いに対向するようにかつ所定の間隔で離間するように、前記第1透明基板及び前記第2透明基板が対向して配置されているタッチパネルの製造方法であって、
前記第1透明基板及び前記第2透明基板のうちいずれか一方の主面上に、水素ガス、酸素ガス、水蒸気の群から選択される2種または3種を含む反応性ガス雰囲気中にて第1の酸化亜鉛系材料からなるターゲットを用いてスパッタ法を行うことにより、光学膜を成膜し、
次いで、前記光学膜上に、水素ガス、酸素ガス、水蒸気の群から選択される2種または3種を含む反応性ガス雰囲気中にて第2の酸化亜鉛系材料からなるターゲットを用いてスパッタ法を行うことにより、前記透明導電膜を成膜する
ことを特徴とするタッチパネルの製造方法。 - 請求項1から請求項4のいずれか一項に記載のタッチパネルの製造方法であって、
前記水素ガスの分圧(PH2)と前記酸素ガスの分圧(PO2)との比R(PH2/PO2)は、
R=PH2/PO2≧5
を満たすことを特徴とするタッチパネルの製造方法。 - 請求項1から請求項5のいずれか一項に記載のタッチパネルの製造方法であって、
前記スパッタ法を行う際に用いるスパッタ電圧は、340V以下であることを特徴とするタッチパネルの製造方法。 - 請求項1から請求項6のいずれか一項に記載のタッチパネルの製造方法であって、
前記スパッタ法を行う際に用いるスパッタ電圧は、直流電圧に高周波電圧が重畳された電圧であることを特徴とするタッチパネルの製造方法。 - 請求項1から請求項7のいずれか一項に記載のタッチパネルの製造方法であって、
前記ターゲットの表面における水平磁界の強度の最大値は、600ガウス以上であることを特徴とするタッチパネルの製造方法。 - 請求項1から請求項8のいずれか一項に記載のタッチパネルの製造方法であって、
前記酸化亜鉛系材料は、アルミニウム添加酸化亜鉛又はガリウム添加酸化亜鉛であることを特徴とするタッチパネルの製造方法。 - タッチパネルを製造する成膜装置であって、
真空容器と、
前記真空容器内においてターゲットを保持するターゲット保持部と、
前記ターゲットにスパッタ電圧を印加する電源と、を含み、
前記真空容器は、水素ガス導入部,酸素ガス導入部,及び水蒸気導入部のうち2つ以上を有することを特徴とする成膜装置。 - 請求項10に記載の成膜装置であって、
前記電源は、直流電源と高周波電源とを併用していることを特徴とする成膜装置。 - 請求項10又は請求項11記載の成膜装置であって、
前記ターゲット保持部に設けられ、前記ターゲットの表面に強度の最大値が600ガウス以上の水平磁界を発生させる磁界発生部を含むことを特徴とする成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801225461A CN102066601B (zh) | 2008-07-09 | 2009-07-03 | 触摸面板的制造方法和成膜装置 |
JP2010519757A JPWO2010004937A1 (ja) | 2008-07-09 | 2009-07-03 | タッチパネルの製造方法及び成膜装置 |
US13/000,105 US20110089026A1 (en) | 2008-07-09 | 2009-07-03 | Touch panel manufacturing method and film formation apparatus |
KR1020107028329A KR101226726B1 (ko) | 2008-07-09 | 2009-07-03 | 터치 패널의 제조 방법 및 성막 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008179372 | 2008-07-09 | ||
JP2008-179372 | 2008-07-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010004937A1 true WO2010004937A1 (ja) | 2010-01-14 |
Family
ID=41507051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/062206 WO2010004937A1 (ja) | 2008-07-09 | 2009-07-03 | タッチパネルの製造方法及び成膜装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110089026A1 (ja) |
JP (1) | JPWO2010004937A1 (ja) |
KR (1) | KR101226726B1 (ja) |
CN (1) | CN102066601B (ja) |
TW (1) | TWI409540B (ja) |
WO (1) | WO2010004937A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446018A (zh) * | 2010-09-30 | 2012-05-09 | 陈维钏 | 触控面板制造方法 |
CN102446019A (zh) * | 2010-09-30 | 2012-05-09 | 陈维钏 | 触控面板的制造方法 |
JP2012119477A (ja) * | 2010-11-30 | 2012-06-21 | Sumitomo Heavy Ind Ltd | 太陽電池モジュールの製造方法及び成膜装置 |
KR20190138670A (ko) | 2017-05-31 | 2019-12-13 | 가부시키가이샤 아루박 | 성막 장치 및 성막 방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2009084441A1 (ja) * | 2007-12-28 | 2011-05-19 | 株式会社アルバック | 透明導電膜の成膜方法及び成膜装置 |
EP2918699A1 (de) * | 2014-03-14 | 2015-09-16 | Justus-Liebig-Universität Gießen | Verfahren zur Herstellung von Metalloxid-Halbleiterschichten und Verwendung von solchen Metalloxid-Halbleiterschichten in elektronischen Bauteilen |
JP6418631B2 (ja) * | 2014-06-17 | 2018-11-07 | 株式会社アルバック | 透明導電性基板およびその製造方法、並びにタッチパネル |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111253A (ja) * | 1983-11-21 | 1985-06-17 | Tomoegawa Paper Co Ltd | 電子写真感光体およびその製造方法 |
JPH0950712A (ja) * | 1995-08-07 | 1997-02-18 | Hitachi Ltd | 透明導電膜及びその形成方法 |
JP2001076887A (ja) * | 1999-07-08 | 2001-03-23 | Ulvac Japan Ltd | 透明導電膜の形成方法及びこれを用いた有機el装置の製造方法 |
WO2003032332A1 (fr) * | 2001-10-05 | 2003-04-17 | Bridgestone Corporation | Film transparent electroconducteur, son procede de fabrication, et ecran tactile y relatif |
JP2003532997A (ja) * | 2000-05-12 | 2003-11-05 | ウンアクシス ドイチェランド ゲーエムベーハー | インジウム−スズ酸化物(ito)フィルム及びその製造方法 |
JP2004059964A (ja) * | 2002-07-25 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 透明導電膜およびその製造方法 |
JP2004175074A (ja) * | 2002-11-29 | 2004-06-24 | Nidek Co Ltd | 導電性を有する多層膜付透明基板 |
JP2005047178A (ja) * | 2003-07-30 | 2005-02-24 | Nidek Co Ltd | 導電性を有する多層膜付透明基板 |
JP2009176927A (ja) * | 2008-01-24 | 2009-08-06 | Ulvac Japan Ltd | 太陽電池の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0756131A (ja) * | 1993-08-12 | 1995-03-03 | Tonen Chem Corp | 透明導電膜の製造方法 |
JP2003109434A (ja) * | 2001-06-27 | 2003-04-11 | Bridgestone Corp | 透明導電フィルム及びタッチパネル |
JP4909559B2 (ja) * | 2005-10-13 | 2012-04-04 | 日本曹達株式会社 | 透明導電性基材 |
JP2007294220A (ja) * | 2006-04-25 | 2007-11-08 | Konica Minolta Holdings Inc | 透明導電膜を有する基材 |
-
2009
- 2009-07-03 JP JP2010519757A patent/JPWO2010004937A1/ja active Pending
- 2009-07-03 KR KR1020107028329A patent/KR101226726B1/ko active IP Right Grant
- 2009-07-03 WO PCT/JP2009/062206 patent/WO2010004937A1/ja active Application Filing
- 2009-07-03 CN CN2009801225461A patent/CN102066601B/zh not_active Expired - Fee Related
- 2009-07-03 US US13/000,105 patent/US20110089026A1/en not_active Abandoned
- 2009-07-07 TW TW098122967A patent/TWI409540B/zh not_active IP Right Cessation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111253A (ja) * | 1983-11-21 | 1985-06-17 | Tomoegawa Paper Co Ltd | 電子写真感光体およびその製造方法 |
JPH0950712A (ja) * | 1995-08-07 | 1997-02-18 | Hitachi Ltd | 透明導電膜及びその形成方法 |
JP2001076887A (ja) * | 1999-07-08 | 2001-03-23 | Ulvac Japan Ltd | 透明導電膜の形成方法及びこれを用いた有機el装置の製造方法 |
JP2003532997A (ja) * | 2000-05-12 | 2003-11-05 | ウンアクシス ドイチェランド ゲーエムベーハー | インジウム−スズ酸化物(ito)フィルム及びその製造方法 |
WO2003032332A1 (fr) * | 2001-10-05 | 2003-04-17 | Bridgestone Corporation | Film transparent electroconducteur, son procede de fabrication, et ecran tactile y relatif |
JP2004059964A (ja) * | 2002-07-25 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 透明導電膜およびその製造方法 |
JP2004175074A (ja) * | 2002-11-29 | 2004-06-24 | Nidek Co Ltd | 導電性を有する多層膜付透明基板 |
JP2005047178A (ja) * | 2003-07-30 | 2005-02-24 | Nidek Co Ltd | 導電性を有する多層膜付透明基板 |
JP2009176927A (ja) * | 2008-01-24 | 2009-08-06 | Ulvac Japan Ltd | 太陽電池の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446018A (zh) * | 2010-09-30 | 2012-05-09 | 陈维钏 | 触控面板制造方法 |
CN102446019A (zh) * | 2010-09-30 | 2012-05-09 | 陈维钏 | 触控面板的制造方法 |
CN102446018B (zh) * | 2010-09-30 | 2013-09-25 | 陈维钏 | 触控面板制造方法 |
CN102446019B (zh) * | 2010-09-30 | 2014-07-23 | 陈维钏 | 触控面板的制造方法 |
JP2012119477A (ja) * | 2010-11-30 | 2012-06-21 | Sumitomo Heavy Ind Ltd | 太陽電池モジュールの製造方法及び成膜装置 |
KR20190138670A (ko) | 2017-05-31 | 2019-12-13 | 가부시키가이샤 아루박 | 성막 장치 및 성막 방법 |
Also Published As
Publication number | Publication date |
---|---|
TWI409540B (zh) | 2013-09-21 |
KR101226726B1 (ko) | 2013-01-25 |
CN102066601B (zh) | 2013-03-13 |
JPWO2010004937A1 (ja) | 2012-01-05 |
CN102066601A (zh) | 2011-05-18 |
US20110089026A1 (en) | 2011-04-21 |
KR20110010786A (ko) | 2011-02-07 |
TW201018996A (en) | 2010-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20110194181A1 (en) | Film forming method for antireflection film, antireflection film, and film forming device | |
WO2009084441A1 (ja) | 透明導電膜の成膜方法及び成膜装置 | |
WO2010004937A1 (ja) | タッチパネルの製造方法及び成膜装置 | |
TW201422836A (zh) | 附透明電極的基板的製造方法及附透明電極的基板 | |
JP2009176927A (ja) | 太陽電池の製造方法 | |
WO2009084527A1 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP5123785B2 (ja) | 反射防止膜の成膜方法及び反射防止膜 | |
JP4793056B2 (ja) | 反射防止膜のスパッタ成膜方法 | |
JP5193232B2 (ja) | 液晶表示装置の製造方法 | |
JP2009007636A (ja) | 低屈折率膜及びその成膜方法、並びに反射防止膜 | |
JP2007113026A (ja) | 透明導電膜及びそれを含む透明導電性基材 | |
JP7478721B2 (ja) | 透明電極付き基板の製造方法 | |
KR101334725B1 (ko) | 터치 스크린 패널용 투명 도전성 필름 및 그 제조방법 | |
JP2008102272A (ja) | エレクトロクロミック素子及びその製造方法 | |
JP2008102273A (ja) | エレクトロクロミック素子及びその製造方法 | |
TWI271442B (en) | Device and method for manufacturing a transparent conductive film | |
JP2011208270A (ja) | 透明誘電体薄膜の形成方法 | |
JPH06136161A (ja) | ガス及び湿気バリアー膜及びその製造方法 | |
JP2010067433A (ja) | 透明導電膜付き基板の製造方法及び透明導電膜付き基板 | |
JP2007297682A (ja) | 酸化ジルコニウム膜及びその成膜方法、並びに反射防止膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980122546.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09794382 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010519757 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20107028329 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13000105 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 9135/DELNP/2010 Country of ref document: IN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09794382 Country of ref document: EP Kind code of ref document: A1 |