WO2010003784A3 - Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben - Google Patents

Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben Download PDF

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Publication number
WO2010003784A3
WO2010003784A3 PCT/EP2009/057483 EP2009057483W WO2010003784A3 WO 2010003784 A3 WO2010003784 A3 WO 2010003784A3 EP 2009057483 W EP2009057483 W EP 2009057483W WO 2010003784 A3 WO2010003784 A3 WO 2010003784A3
Authority
WO
WIPO (PCT)
Prior art keywords
aluminium
passivated
producing
solar cell
silicon
Prior art date
Application number
PCT/EP2009/057483
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English (en)
French (fr)
Other versions
WO2010003784A2 (de
WO2010003784A4 (de
Inventor
Jan Schmidt
Robert Bock
Original Assignee
Institut Für Solarenergieforschung Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut Für Solarenergieforschung Gmbh filed Critical Institut Für Solarenergieforschung Gmbh
Publication of WO2010003784A2 publication Critical patent/WO2010003784A2/de
Publication of WO2010003784A3 publication Critical patent/WO2010003784A3/de
Publication of WO2010003784A4 publication Critical patent/WO2010003784A4/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Es wird eine Silizium-Solarzelle (1) und ein Verfahren zu deren Herstellung vorgeschlagen. Dabei wird eine Aluminium-haltige Schicht auf eine Oberfläche eines Siliziumsubstrates (2) aufgebracht, vorzugsweise mittels Siebdruck, und anschließend eingefeuert, so dass sich ein Aluminium-dotierter Siliziumbereich (13) bildet. Überschüssiges Aluminium sowie das Aluminium-Silizium-Eutektikum wird anschließend weggeätzt und außerdem der Aluminium-dotierte Siliziumbereich (13) zurückgeätzt. Anschließend wird die Oberfläche des Aluminium-dotierten Siliziumbereichs (13) mit einer Dielektrikumschicht, vorzugsweise aus Wasserstoff-haltigem Siliziumnitrid, passiviert. Auf diese Weise können Solarzellen hohen Wirkungsgrades unter Nutzung bekannter Fertigungstechnologien gefertigt werden.
PCT/EP2009/057483 2008-06-16 2009-06-16 Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben WO2010003784A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008028578A DE102008028578A1 (de) 2008-06-16 2008-06-16 Siliziumsolarzelle mit passivierter p-Typ-Oberfläche und Verfahren zur Herstellung derselben
DE102008028578.1 2008-06-16

Publications (3)

Publication Number Publication Date
WO2010003784A2 WO2010003784A2 (de) 2010-01-14
WO2010003784A3 true WO2010003784A3 (de) 2010-07-08
WO2010003784A4 WO2010003784A4 (de) 2010-08-26

Family

ID=41507476

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/057483 WO2010003784A2 (de) 2008-06-16 2009-06-16 Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben

Country Status (2)

Country Link
DE (1) DE102008028578A1 (de)
WO (1) WO2010003784A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120084104A (ko) 2011-01-19 2012-07-27 엘지전자 주식회사 태양전지
DE102011010306A1 (de) * 2011-02-03 2012-08-09 Rena Gmbh Verfahren zur Herstellung einer kristallinen Siliziumsolarzelle unter Vermeidung unerwünschter Metallabscheidungen
CN103660533B (zh) * 2012-09-07 2015-12-02 洛阳鼎晶电子科技有限公司 一种用于制作超薄硅单晶片的金属浆丝网印刷装置
EP3982421A1 (de) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Verfahren zur lokalen modifikation der ätzbeständigkeit in einer siliziumschicht, anwendung dieses verfahrens bei der herstellung von passivierenden kontaktsolarzellen und so hergestellte solarzelle

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008039067A2 (en) * 2006-09-25 2008-04-03 Ecn Energieonderzoek Centrum Nederland Method of manufacturing crystalline silicon solar cells with improved surface passivation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008039067A2 (en) * 2006-09-25 2008-04-03 Ecn Energieonderzoek Centrum Nederland Method of manufacturing crystalline silicon solar cells with improved surface passivation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ABERLE A ET AL: "Surface passivation of high efficiency silicon solar cells", 19900521; 19900521 - 19900525, 21 May 1990 (1990-05-21), pages 233 - 238, XP010003183 *
BOCK ROBERT ET AL: "Effective passivation of highly aluminum-doped p-type silicon surfaces using amorphous silicon", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.2784193, vol. 91, no. 11, 13 September 2007 (2007-09-13), pages 112112 - 112112, XP012099149, ISSN: 0003-6951 *
HOEX B ET AL: "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.2784168, vol. 91, no. 11, 11 September 2007 (2007-09-11), pages 112107 - 112107, XP012099144, ISSN: 0003-6951 *

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Publication number Publication date
WO2010003784A2 (de) 2010-01-14
DE102008028578A1 (de) 2010-03-04
WO2010003784A4 (de) 2010-08-26

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