WO2010003784A3 - Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben - Google Patents
Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben Download PDFInfo
- Publication number
- WO2010003784A3 WO2010003784A3 PCT/EP2009/057483 EP2009057483W WO2010003784A3 WO 2010003784 A3 WO2010003784 A3 WO 2010003784A3 EP 2009057483 W EP2009057483 W EP 2009057483W WO 2010003784 A3 WO2010003784 A3 WO 2010003784A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- aluminium
- passivated
- producing
- solar cell
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Es wird eine Silizium-Solarzelle (1) und ein Verfahren zu deren Herstellung vorgeschlagen. Dabei wird eine Aluminium-haltige Schicht auf eine Oberfläche eines Siliziumsubstrates (2) aufgebracht, vorzugsweise mittels Siebdruck, und anschließend eingefeuert, so dass sich ein Aluminium-dotierter Siliziumbereich (13) bildet. Überschüssiges Aluminium sowie das Aluminium-Silizium-Eutektikum wird anschließend weggeätzt und außerdem der Aluminium-dotierte Siliziumbereich (13) zurückgeätzt. Anschließend wird die Oberfläche des Aluminium-dotierten Siliziumbereichs (13) mit einer Dielektrikumschicht, vorzugsweise aus Wasserstoff-haltigem Siliziumnitrid, passiviert. Auf diese Weise können Solarzellen hohen Wirkungsgrades unter Nutzung bekannter Fertigungstechnologien gefertigt werden.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008028578A DE102008028578A1 (de) | 2008-06-16 | 2008-06-16 | Siliziumsolarzelle mit passivierter p-Typ-Oberfläche und Verfahren zur Herstellung derselben |
DE102008028578.1 | 2008-06-16 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2010003784A2 WO2010003784A2 (de) | 2010-01-14 |
WO2010003784A3 true WO2010003784A3 (de) | 2010-07-08 |
WO2010003784A4 WO2010003784A4 (de) | 2010-08-26 |
Family
ID=41507476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/057483 WO2010003784A2 (de) | 2008-06-16 | 2009-06-16 | Siliziumsolarzelle mit passivierter p-typ-oberfläche und verfahren zur herstelllung derselben |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102008028578A1 (de) |
WO (1) | WO2010003784A2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120084104A (ko) | 2011-01-19 | 2012-07-27 | 엘지전자 주식회사 | 태양전지 |
DE102011010306A1 (de) * | 2011-02-03 | 2012-08-09 | Rena Gmbh | Verfahren zur Herstellung einer kristallinen Siliziumsolarzelle unter Vermeidung unerwünschter Metallabscheidungen |
CN103660533B (zh) * | 2012-09-07 | 2015-12-02 | 洛阳鼎晶电子科技有限公司 | 一种用于制作超薄硅单晶片的金属浆丝网印刷装置 |
EP3982421A1 (de) | 2020-10-09 | 2022-04-13 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur lokalen modifikation der ätzbeständigkeit in einer siliziumschicht, anwendung dieses verfahrens bei der herstellung von passivierenden kontaktsolarzellen und so hergestellte solarzelle |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008039067A2 (en) * | 2006-09-25 | 2008-04-03 | Ecn Energieonderzoek Centrum Nederland | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4217428A1 (de) * | 1991-12-09 | 1993-06-17 | Deutsche Aerospace | Hochleistungs-solarzellenstruktur |
-
2008
- 2008-06-16 DE DE102008028578A patent/DE102008028578A1/de not_active Withdrawn
-
2009
- 2009-06-16 WO PCT/EP2009/057483 patent/WO2010003784A2/de active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008039067A2 (en) * | 2006-09-25 | 2008-04-03 | Ecn Energieonderzoek Centrum Nederland | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
Non-Patent Citations (3)
Title |
---|
ABERLE A ET AL: "Surface passivation of high efficiency silicon solar cells", 19900521; 19900521 - 19900525, 21 May 1990 (1990-05-21), pages 233 - 238, XP010003183 * |
BOCK ROBERT ET AL: "Effective passivation of highly aluminum-doped p-type silicon surfaces using amorphous silicon", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.2784193, vol. 91, no. 11, 13 September 2007 (2007-09-13), pages 112112 - 112112, XP012099149, ISSN: 0003-6951 * |
HOEX B ET AL: "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.2784168, vol. 91, no. 11, 11 September 2007 (2007-09-11), pages 112107 - 112107, XP012099144, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
WO2010003784A2 (de) | 2010-01-14 |
DE102008028578A1 (de) | 2010-03-04 |
WO2010003784A4 (de) | 2010-08-26 |
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