WO2009157154A1 - 表示素子の製造方法及び製造装置 - Google Patents
表示素子の製造方法及び製造装置 Download PDFInfo
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- WO2009157154A1 WO2009157154A1 PCT/JP2009/002748 JP2009002748W WO2009157154A1 WO 2009157154 A1 WO2009157154 A1 WO 2009157154A1 JP 2009002748 W JP2009002748 W JP 2009002748W WO 2009157154 A1 WO2009157154 A1 WO 2009157154A1
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- alignment system
- display element
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 148
- 230000008602 contraction Effects 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 29
- 238000005192 partition Methods 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 101000719121 Arabidopsis thaliana Protein MEI2-like 1 Proteins 0.000 abstract description 11
- 101000857677 Homo sapiens Runt-related transcription factor 1 Proteins 0.000 abstract description 11
- 102100025373 Runt-related transcription factor 1 Human genes 0.000 abstract description 11
- 238000012546 transfer Methods 0.000 abstract description 9
- 108010079362 Core Binding Factor Alpha 3 Subunit Proteins 0.000 abstract description 8
- 102100025369 Runt-related transcription factor 3 Human genes 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 description 81
- 238000005401 electroluminescence Methods 0.000 description 34
- 230000032258 transport Effects 0.000 description 25
- 238000005520 cutting process Methods 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000005669 field effect Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 3
- 101100381861 Bacillus subtilis (strain 168) blt gene Proteins 0.000 description 3
- 101100381860 Bacillus subtilis (strain 168) bmr gene Proteins 0.000 description 3
- 101100400867 Candida albicans (strain SC5314 / ATCC MYA-2876) MDR1 gene Proteins 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001548 drop coating Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- PIRAJFSIUUNUPY-UHFFFAOYSA-N [Sn]=O.[In].[Sn]=O.[In] Chemical compound [Sn]=O.[In].[Sn]=O.[In] PIRAJFSIUUNUPY-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Definitions
- the present invention relates to a method or an apparatus for manufacturing a display element such as an organic electroluminescence (EL) element, a liquid crystal display element, or a field emission display (FED).
- a display element such as an organic electroluminescence (EL) element, a liquid crystal display element, or a field emission display (FED).
- EL organic electroluminescence
- FED field emission display
- Display elements such as organic EL and liquid crystal display elements are characterized by their small size, thinness, low power consumption, and light weight, and are currently widely used in various electronic devices. These display elements are increasing in size.
- deformation of the flexible sheet substrate greatly affects the yield of products. For this reason, accurate acquisition of the positional information (alignment information) of the flexible sheet substrate in the manufacturing process greatly affects the yield improvement of the liquid crystal display element product.
- Patent Document 1 discloses a manufacturing apparatus that manufactures an organic EL display element in a roll form as a measure for reducing the organic EL display element and reducing the running cost.
- an image recognition camera is used to align the flexible sheet substrate and the mask when the substrate and the mask are aligned. It is necessary to perform alignment.
- the invention disclosed in Patent Document 1 has a first image recognition camera for confirming the position of the flexible sheet substrate and a second image recognition camera for confirming the position of the mask.
- the flexible sheet substrate may shrink due to heat in each process.
- positioning is very important.
- slip occurs between the conveyance roller and the flexible sheet substrate, or because there is a difference between the rotation speed of the conveyance roller and the conveyance speed of the long flexible sheet substrate, It is necessary to appropriately grasp the conveyance speed of the flexible sheet substrate. Therefore, a display device manufacturing apparatus capable of detecting a position with high accuracy is provided in order to form a display device with high accuracy on a substrate.
- the display element manufacturing method of the present invention includes a first and second alignment systems arranged in a predetermined direction to detect a reference mark on the substrate, and calculates an expansion and contraction in the predetermined direction of the substrate. And a processing step of processing a predetermined position of the substrate by the processing device based on expansion and contraction of the substrate in a predetermined direction.
- the display element manufacturing apparatus of the present invention is arranged at a predetermined distance from the first alignment system, a transport unit that transports a substrate having a reference mark in a predetermined direction, a first alignment system that detects the reference mark, and the first alignment system.
- a second alignment system that detects a reference mark; a calculation unit that detects the reference mark and calculates expansion / contraction of the substrate in a predetermined direction or a substrate transport speed; and at least one of expansion / contraction of the substrate in a predetermined direction or substrate transport speed;
- a processing unit that processes the substrate at a predetermined position based on the mark.
- the present invention can measure the expansion and contraction and movement speed of the substrate by detecting the reference mark with the first alignment system and the second alignment system with respect to the substrate that easily expands and contracts. For this reason, the precision of the display element manufacturing apparatus can be improved, and elements with few defects are mass-produced.
- FIG. 3 is a perspective view of a first position detection device 60.
- FIG. 7 is a perspective view of a second position detection device 69.
- FIG. 6 is a diagram for calibrating the distance between the first alignment system 61 and the second alignment system 62 in the first position detection device 60.
- A) is a perspective view of the laser interferometer of the first position detector 60R on the right side.
- (B) is a perspective view of the laser interferometer of the second position detector 69R on the right side.
- (A) is a top view of the first position detection device 60 and the first position detection device 60 and the gate droplet applying device 20G.
- (B) is a diagram showing a positional relationship between the alignment mark AM and the gate bus line GBL and the source bus line SBL of the field effect transistor.
- 4 is a schematic flowchart of a manufacturing process of the organic EL element 50.
- FIG. 1A is an enlarged top view of the organic EL element 50
- FIGS. 1B and 1C are a bb sectional view and a cc sectional view of FIG.
- the organic EL element 50 is a bottom contact type.
- a gate electrode G, a gate insulating layer I, a source electrode S, a drain electrode D, a pixel electrode P, and an organic semiconductor layer OS are formed on a flexible sheet substrate FB (hereinafter referred to as a sheet substrate FB). Is done.
- the gate electrode G is formed on the sheet substrate FB.
- An insulating layer I is formed on the gate electrode G.
- a source electrode S of the source bus line SBL is formed on the insulating layer I, and a drain electrode D connected to the pixel electrode P is formed.
- An organic semiconductor layer OS is formed between the source electrode S and the drain electrode D. This completes the field effect transistor.
- a light emitting layer IR is formed on the pixel electrode P, and a transparent electrode ITO is formed on the light emitting layer IR.
- the sheet substrate FB has a partition wall BA (bank layer).
- source bus lines SBL are formed between the barrier ribs BA.
- the partition BA allows the source bus line SBL to be formed with high accuracy, and the pixel electrode P and the light emitting layer IR to be accurately formed.
- the gate bus line GBL is also formed between the partition walls BA in the same manner as the source bus line SBL.
- FIG. 2 is a schematic diagram showing a configuration of a manufacturing apparatus 100 that manufactures the organic EL element 50 having the pixel electrode P and the light emitting layer IR shown in FIG. 1 on the sheet substrate FB.
- a substrate on which a thin film transistor (TFT) and a pixel electrode are formed is formed.
- TFT thin film transistor
- partition walls BA are accurately formed in the boundary region of the pixel electrode. It is preferable.
- the manufacturing apparatus 100 for an organic EL element includes a partition forming process, an electrode forming process, and a light emitting layer forming process.
- a partition forming process In order to perform precise processing in the electrode forming step and the light emitting layer forming step, it is necessary to accurately acquire the position information of the sheet substrate. For this reason, before the electrode forming step and the light emitting layer forming step, the first position detecting device 60 for detecting the alignment mark AM is required.
- the manufacturing apparatus 100 for an organic EL element includes a supply roll RL for sending out a sheet substrate FB wound in a roll shape. As the supply roll RL rotates at a predetermined speed, the sheet substrate FB is sent in the + X-axis direction, which is the transport direction.
- the manufacturing apparatus 100 for organic EL elements includes transport rollers RR at a plurality of locations, and the sheet substrate FB is also sent in the X-axis direction by rotating the transport rollers RR.
- the transport roller RR may be a rubber roller that sandwiches the sheet substrate FB from both sides. A part of the transport rollers RR can move in the Y-axis direction orthogonal to the transport direction.
- the sheet substrate FB sent out from the supply roll RL first enters a partition formation process for forming the partition BA on the sheet substrate FB.
- the imprint roller 10 presses the sheet substrate FB, and the sheet substrate FB is heated to the glass transition point or more by the thermal transfer roller 15 so that the pressed partition wall BA maintains its shape.
- the roller surface of the imprint roller 10 is mirror-finished, and a fine imprint mold 11 made of a material such as SiC or Ta is attached to the roller surface.
- the fine imprint mold 11 forms a thin film transistor wiring stamper and a color filter stamper.
- the mold shape including the partition BA formed in the fine imprint mold 11 is transferred to the sheet substrate FB.
- the fine imprint mold 11 has a stamper for the alignment marks AM. As the imprint roller 10 rotates, the alignment mark AM and the partition wall BA are formed.
- the thin film transistor may be an inorganic semiconductor type or an organic semiconductor type. If a thin film transistor is formed using an organic semiconductor, the thin film transistor can be formed by utilizing a printing method or a droplet coating method.
- the manufacturing apparatus 100 uses a droplet applying apparatus 20 that is one of the droplet applying methods in the electrode forming process.
- the droplet applying device 20 can adopt an ink jet method or a dispenser method.
- Examples of the inkjet method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method.
- the use of the material is less wasteful, and a desired amount of the material can be accurately disposed at a desired position.
- the amount of one drop of metal ink applied by the droplet application method is, for example, 1 to 300 nanograms.
- Metal ink is a liquid in which a conductor having a particle diameter of about 5 nm is stably dispersed in a solvent at room temperature, and carbon, silver (Ag), gold (Au), or the like is used as the conductor.
- the manufacturing apparatus 100 arranges the first position detection device 60 after the process of the thermal transfer roller 15.
- the first position detecting device 60 measures the alignment mark AM, thereby instructing an accurate coating position to the gate droplet coating apparatus 20G in the next step.
- the first position detection device 60 measures the deformation amount of the sheet substrate FB.
- the gate droplet applying apparatus 20G applies metal ink into the partition wall BA of the gate bus line GBL.
- the heat treatment apparatus BK dries or bakes (bakes) the metal ink with radiant heat such as hot air or far infrared rays. Through these processes, the gate electrode G (see FIG. 1B) is formed.
- the first position detection device 60 detects the alignment mark AM in a state where the sheet substrate FB and the transport roller RR are in close contact so that the sheet substrate FB does not sag. Therefore, the first position detection device 60 is disposed on the conveyance roller RR, and the first position detection device 60 detects the alignment mark AM in a state where the sheet substrate FB is on the conveyance roller RR.
- the first position detection device 60 disposed downstream of the drying or baking process measures the alignment mark AM and instructs the droplet application apparatus 20I for the insulating layer in the next process to have an accurate application position.
- the insulating layer droplet applying apparatus 20I applies an electrically insulating ink of polyimide resin or urethane resin to the switching unit.
- the heat treatment apparatus BK dries and cures the electrically insulating ink by radiant heat such as hot air or far infrared rays. With these processes, the gate insulating layer I is formed.
- the first position detection device 60 disposed after the process of the gate insulating layer I measures the alignment mark AM, and is accurate to the droplet application apparatus 20SD for the source and drain and for the pixel electrode in the next process. Tell the application position.
- the droplet applying device 20SD for the source, the drain, and the pixel electrode applies metal ink in the partition BA of the source bus line SBL (see FIG. 1A) and in the partition BA of the pixel electrode P.
- the heat treatment apparatus BK dries or fires the metal ink. By these processes, an electrode in a state where the source electrode S, the drain electrode D, and the pixel electrode P (see FIG. 1A) are connected is formed.
- the first position detection device 60 disposed after the process of the source electrode S and the drain electrode D measures the alignment mark AM, and sets an accurate application position on the cutting position of the cutting device 30 and the organic semiconductor droplet applying device 20OS. Tell.
- the cutting device 30 cuts the source electrode S and the drain electrode D connected to each other.
- the cutting device 30 is a femtosecond laser irradiation unit using, for example, a femtosecond laser.
- the femtosecond laser irradiation unit irradiates laser light LL having a wavelength of 760 nm with a pulse of 10 KHz to 40 KHz.
- the galvano mirror (not shown) disposed in the optical path of the laser beam LL rotates, the irradiation position of the laser beam LL changes.
- the cutting device 30 uses, for example, a femtosecond laser irradiation unit, it can be processed on the order of submicrons.
- the cutting device 30 accurately cuts the channel length (interval) between the source electrode S and the drain electrode D (see FIG. 1B) that determines the performance of the field effect transistor.
- the source electrode S, the drain electrode D, and the channel length are about 20 ⁇ m to 30 ⁇ m. By this cutting process, an electrode in which the source electrode S and the drain electrode D are separated is formed.
- the cutting device 30 can use a carbon dioxide laser or a green laser in addition to the femtosecond laser. In addition to the laser, the cutting device 30 may use a mechanical cutting device such as a dicing saw.
- the organic semiconductor droplet applying apparatus 20OS applies the organic semiconductor ink to the switching portion between the source electrode S and the drain electrode D.
- the heat treatment apparatus BK dries or bakes the organic semiconductor ink with radiant heat such as hot air or far infrared rays. Through these processes, the organic semiconductor layer OS (see FIG. 1B) is formed.
- the compound forming the organic semiconductor ink may be a single crystal material or an amorphous material, and may be a low molecule or a polymer. Particularly preferred are single crystals or ⁇ -conjugated polymers of condensed ring aromatic hydrocarbon compounds represented by pentacene, triphenylene, anthracene and the like.
- the manufacturing apparatus 100 forms a thin film transistor or the like by using a printing method or a droplet coating method.
- the channel length of the source electrode S and the drain electrode D (see FIG. 1B) that determines the performance of the thin film transistor is determined by laser processing or mechanical processing by detecting an accurate position with the first position detection device 60. It is formed.
- the sheet substrate FB on which the thin film transistor and the pixel electrode are formed is continuously subjected to the next light emitting layer forming step as shown in the lower part of FIG.
- the manufacturing apparatus 100 for an organic EL element continues the process of forming the light emitting layer IR (see FIG. 1) of the organic EL element 50 on the pixel electrode P.
- the manufacturing apparatus 100 uses the printing roller 40 in the light emitting layer forming process.
- the printing roller 40 soaked with the phosphorescent compound rotates to form a layer of the phosphorescent compound EL on the pixel electrode PX.
- the phosphorescent compound EL may be applied by a droplet coating method instead of the printing method.
- the second position detection device 69 disposed after the cutting device 30 transmits the accurate application position to the printing roller 40 in the next step.
- the red light emitting layer printing roller 40R is disposed on the lower side (Z direction) than the transport roller RR that changes the transport direction. Therefore, the transport direction of the sheet substrate FB is sent from the + X axis direction to the ⁇ Z axis direction, and the transport direction of the sheet substrate FB is sent from the ⁇ Z axis direction to the + X axis direction by the printing roller 40R for the red light emitting layer. Therefore, the contact area between the sheet substrate FB and the red light emitting layer printing roller 40R is increased.
- the green light emitting layer printing roller 40G and the blue light emitting layer printing roller 40B include a small front roller SR1 and a rear roller SR2 for pressing the sheet substrate FB.
- the front roller SR1 and the rear roller SR2 increase the area where the sheet substrate FB follows the outer peripheral surfaces of the printing roller 40G and the printing roller 40B, that is, the contact area.
- the printing roller 40R for the red light emitting layer applies the R solution onto the pixel electrode P and forms a film so as to have a thickness of 100 nm after drying.
- the R solution is a solution in which a red dopant material is dissolved in 1,2-dichloroethane in a host material polyvinylcarbazole (PVK).
- PVK polyvinylcarbazole
- the green light emitting layer printing roller 40G applies the G solution onto the pixel electrode P.
- the G solution is a solution in which a green dopant material is dissolved in 1,2-dichloroethane in a host material PVK.
- the blue light emitting layer printing roller 40B applies the B solution onto the pixel electrode P.
- the solution B is a solution in which a blue dopant material is dissolved in 1,2-dichloroethane in a host material PVK. Thereafter, the heat treatment apparatus BK dries and cures the light emitting layer solution with radiant heat such as hot air or far infrared rays.
- the first position detection device 60 arranged after the printing process of the light emitting layer measures the alignment mark AM and transmits the accurate coating position to the droplet coating apparatus 20I for the insulating layer in the next process.
- the insulating layer droplet applying apparatus 20I applies an electrically insulating ink of polyimide resin or urethane resin to a part of the gate bus line GBL or the source bus line SBL so as not to be short-circuited with a transparent electrode ITO described later. To do.
- the heat treatment apparatus BK dries and cures the electrically insulating ink by radiant heat such as hot air or far infrared rays.
- the first position detection device 60 disposed after the insulating layer forming step measures the alignment mark AM and transmits the accurate application position to the ITO electrode droplet applying device 20IT in the next step.
- the ITO electrode droplet applying apparatus 20IT applies ITO (Indium Tin Oxide indium tin oxide) ink on the red, green and blue light emitting layers.
- the ITO ink preferably has a transmittance of 90% or more.
- the heat treatment apparatus BK dries and cures the ITO ink by radiant heat such as hot air or far infrared rays.
- the organic EL element 50 shown in FIG. 1 is completed.
- the organic EL element 50 may provide a positive hole transport layer and an electron carrying layer, these layers should just utilize a printing method or a droplet coating method.
- the manufacturing apparatus 100 has the speed alignment control unit 90 shown in FIG.
- the speed alignment control unit 90 performs speed control of the supply roll RL and the transport roller RR. Some of the transport rollers RR are movable in the Y-axis direction, and the speed alignment control unit 90 performs movement control of the transport rollers RR in the Y-axis direction. Further, the speed alignment control unit 90 receives the detection result of the alignment mark AM from the plurality of alignment systems 60, and applies the ink application position by the droplet application device 20 or the application position and timing such as ink printing by the printing roller 40, and cutting. The cutting position and timing of the device 30 are controlled.
- the sheet substrate FB used in the present embodiment is a heat-resistant resin film, specifically, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, A polyimide resin, polycarbonate resin, polystyrene resin, or vinyl acetate resin that has a light transmission function can be used.
- the sheet substrate FB is subjected to heat transfer heat treatment in the partition formation process, and the sheet substrate FB is heated to around 200 ° C. in order to receive heat treatment by the heat treatment apparatus BK.
- the sheet substrate FB may be reduced in thermal expansion coefficient by mixing an inorganic filler with a resin film so that the dimensions are not changed as much as possible even when receiving heat.
- FIG. 3 is a perspective view of the first position detection device 60.
- the sheet substrate FB shown in FIG. 3 moves in the transport direction (+ X axis direction).
- the alignment marks AM are formed at equal intervals in the X-axis direction on the right and left sides of the sheet substrate FB.
- the alignment mark AM under the first position detection device 60R on the right side is referred to as an alignment mark AMR1 and an alignment mark AMR2.
- the alignment marks AM below the left first position detection device 60L are referred to as alignment marks AML1 and AML2. All of these are called alignment marks AM when they are not distinguished.
- the first position detection device 60 (60R, 60L) includes a first alignment system 61 and a second alignment system 62, and is disposed so as to come above the alignment mark AM of the sheet substrate FB.
- the first alignment system 61 and the second alignment system 62 are fixed by a holding part 63.
- the holding part 63 is arranged at a predetermined distance, and the holding part 63 is made of an invar alloy made of Fe-36Ni having a low thermal expansion coefficient, a Kovar alloy made of Fe29Ni-17Co, ceramic, or the like. For this reason, the distance between the first alignment system 61 and the second alignment system 62 can be kept at a predetermined distance without being affected by heat. As shown in FIG.
- the first position detection device 60 has a first position detection device 60R on the right side at the upper part on both sides of the sheet substrate FB, which is a position orthogonal to the conveyance direction (+ X axis direction) of the sheet substrate FB. And the left first position detection device 60L.
- the first alignment system 61 of the first position detection device 60R on the right side detects the alignment mark AMR1, and then detects the alignment mark AMR2. At that time, the second alignment system 62 detects the alignment mark AMR1. At the same timing, the first alignment system 61 of the left first position detection device 60L also detects the alignment mark AML2, and the second alignment system 62 detects the alignment mark AML1.
- the first position detection device 60R on the right side detects the alignment mark AMR1 with the first alignment system 61 and detects the moving alignment mark AMR1 with the second alignment system 62.
- the detection signal is sent to the speed calculation unit 91 in the speed alignment control unit 90. Since the interval between the first alignment system 61 and the second alignment system 62 is accurate, it is possible to measure the right speed of the sheet substrate FB accurately.
- the first position detection device 60L on the left also detects the alignment mark AML1 with the first alignment system 61, and detects the moving alignment mark AML1 with the second alignment system 62.
- the detection signal is sent to the speed calculation unit 91 in the speed alignment control unit 90. Since the distance between the first alignment system 61 and the second alignment system 62 is accurate, it is possible to measure an accurate speed on the left side of the sheet substrate FB.
- the first position detection device 60R on the right side and the first position detection device 60L on the left side simultaneously measure the alignment mark AMR1 and the alignment mark AML1 on both sides of the sheet substrate FB, so that the speed calculation unit 91 can detect the right and left of the sheet substrate FB. Can be measured.
- the expansion / contraction calculation unit 93 in the velocity alignment control unit 90 compares the detected distance between the alignment mark AMR1 and the alignment mark AMR2 with the distance between the alignment mark AMR1 and the alignment mark AMR2 that are design values.
- the expansion / contraction calculation unit 93 calculates the expansion / contraction state on the right side of the sheet substrate FB.
- the distance between the alignment mark AMR1 and the alignment mark AMR2, which are design values, coincides between the pair of alignment marks AM formed on the fine imprint mold 11 (see FIG. 2).
- the expansion / contraction calculation unit 93 performs the alignment mark AMR1, alignment mark AMR2, alignment mark AML1, and alignment mark AML2.
- the expansion / contraction state of the enclosed area can be calculated.
- FIG. 4 is a perspective view of the second position detecting device 69.
- the second position detection device 69 has the same configuration as the first position detection device 60, and includes a first alignment system 65, a second alignment system 66, and a holding unit 67. However, the attachment angles of the first alignment system 65 and the second alignment system 66 are different. Each of the optical axes of the first alignment system 65 and the optical axis of the second alignment system 66 is set at 90 degrees.
- the material of the holding portion 67 of the second position detection device 69 is formed of a material having a low thermal expansion coefficient, like the first position detection device 60.
- the first alignment system 65 of the right-side second position detection device 69R on the right side detects the alignment mark AMR1 after the sheet substrate FB moves in the conveyance direction. Is detected.
- the second alignment system 66 is detecting the alignment mark AMR1.
- the left second position detector 69L also detects the alignment mark AML1 by the second alignment system 66 when the first alignment system 65 detects the alignment mark AML2.
- the sheet substrate FB and the transport roller RR are on the optical axis of the first alignment system 65 of the second position detection device 69 (69R, 69L). Since the first alignment system 65 can detect the alignment mark AM in a state where the sheet substrate FB and the transport roller RR are in close contact with each other, the slack of the sheet substrate FB can be removed and measured. Similarly, the second alignment system 66 of the second position detection device 69 (69R, 69L) can detect the alignment mark AM in a state where the sheet substrate FB and the transport roller RR are in close contact with each other.
- the speed calculation unit 91 is similar to the first position detection device 60.
- the speed and left and right traveling deviation can also be calculated simultaneously.
- the expansion / contraction calculation unit 93 can calculate the expansion / contraction state of the region surrounded by the four alignment marks AM (alignment mark AMR1, alignment mark AMR2, alignment mark AML1, and alignment mark AML2).
- the first position detection device 60 or the second position detection device 69 of this embodiment may pick up an image with a CCD or CMOS under visible light illumination, and process the picked-up image to detect the position of the alignment mark AM.
- the first position detection device 60 or the second position detection device 69 may be a method of detecting the position of the alignment mark AM by irradiating the alignment mark AM with a laser beam and receiving the scattered light.
- FIG. 5 is a diagram showing calibration between the distances of the first alignment system 61 and the second alignment system 62 of the first position detection device 60.
- the first alignment system 61 and the second alignment system 62 are fixed by a holding part 63 made of a material having a low thermal expansion coefficient, but the distance between the first alignment system 61 and the second alignment system 62 is a temperature. It fluctuates due to such influences. Therefore, the manufacturing apparatus 100 for the organic EL element passes the calibration substrate GR in which the calibration basic mark BM is accurately formed before processing the sheet substrate FB. Calibration between the distances between the first alignment system 61 and the second alignment system 62 is performed.
- the calibration substrate GR is a glass or plastic substrate having a small thermal expansion, and the basic mark BMR1, the basic mark BMR2, the basic mark BML1, and the basic mark BML2 are formed on the substrate.
- the positions of these basic marks BM are accurately measured in advance by a measuring instrument (not shown). That is, the distance between the basic mark BMR1 and the basic mark BMR2, the distance between the basic mark BML1 and the basic mark BML2, the distance between the basic mark BMR1 and the basic mark BML1, and the distance between the basic mark BMR2 and the basic mark BML2 are measured in advance. ing.
- the manufacturing apparatus 100 transports the calibration substrate GR instead of the sheet substrate FB.
- the calibration substrate GR stops near the first position detection device 60.
- the first alignment system 61 and the second alignment system 62 of the first position detection device 60 detect the basic mark BM.
- the calibration unit 95 in the velocity alignment control unit 90 calibrates the distance between the first alignment system 61 and the second alignment system 62.
- the calibration unit 95 can also calibrate the distance between the first position detection device 60R on the right side and the first position detection device 60L on the left side.
- the first position detection device 60 is arranged at a plurality of locations.
- the distance between the first alignment system 61 and the second alignment system 62 is also calibrated for each first position detection device 60.
- the distance between the first alignment system 65 and the second alignment system 66 of the second position detection device 69 is calibrated using a flexible calibration substrate with small thermal expansion.
- the basic mark BM for calibration is also drawn on the lexical calibration substrate.
- the calibration unit 95 can calibrate the distance between the optical axes of the first alignment system 65 and the second alignment system 66 of the second position detection device 69.
- FIG. 6 is a perspective view showing the laser interferometer and the first position detection device 60.
- 6A shows the laser interferometer 70 of the first position detection device 60R on the right side of the first position detection device 60
- FIG. 6B shows the second position detection device 69R on the right side of the second position detection device 69.
- the laser interferometer 70 is shown. Note that the laser interferometer 70 of the first position detection device 60L on the left side and the second position detection device 69L on the left side are not shown because they have the same configuration.
- the laser interferometer 70 includes a laser interferometer body 71, a fixed mirror 72, and a moving mirror 73.
- the distance between the first alignment system and the second alignment system is related to the stretched state of the holding portion 63. Therefore, the fixed mirror 72 is installed in the first alignment system 61 and the movable mirror 73 is installed in the second alignment system 62 so that the longitudinal direction of the holding unit 63 is parallel to the projection direction of the laser light 74 and the laser light 75. Installed.
- the two laser beams 74 and 75 projected from the laser interferometer main body 71 are projected in parallel along the longitudinal direction of the holding unit 63, and the fixed mirror 72 and the second alignment system 62 installed in the first alignment system 61. Is projected toward the movable mirror 73 installed on the screen.
- the laser interferometer body 71 synthesizes the laser beams reflected by the fixed mirror 72 and the movable mirror 73, and measures the relative position change between the first alignment system 61 and the second alignment system 62 based on the interference fringes. .
- the laser interferometer 70 can measure a relative position change between the first alignment system 61 and the second alignment system 62 even while the organic EL element is being manufactured on the sheet substrate FB.
- the laser light source (not shown) projected from the laser interferometer main body 71 is one place, and is divided into two laser beams 74 and a laser beam 75 by a spectroscope (not shown) such as a beam splitter.
- the fixed mirror 72 is installed in the first alignment system 65 and the movable mirror 73 is installed in the second alignment system 66 for the second position detection device 69 as well. Then, the two laser beams 74 and 75 projected from the laser interferometer main body 71 are projected in parallel along the longitudinal direction of the holding portion 67, and the relative relationship between the first alignment system 65 and the second alignment system 66 is calculated. Measure position change.
- the manufacturing apparatus 100 for an organic EL element always accurately measures the distance between the first alignment system 61 and the second alignment system 62 or the distance between the first alignment system 65 and the second alignment system 66 using the laser interferometer 70. To do. For this reason, the measured value of the 1st position detection apparatus 60 or the 2nd position detection apparatus 69 can be calibrated correctly. Therefore, the manufacturing apparatus 100 for organic EL elements can always obtain an accurate measurement result.
- FIG. 7A shows a top view of the first position detection device 60, the first position detection device 60, and the gate droplet applying device 20G.
- a gate droplet applying apparatus 20G will be described as a representative of the processing apparatus.
- the description of the second position detection device 69 is omitted.
- the speed calculation unit 91 and the expansion / contraction calculation unit 93 of the speed alignment control unit 90 detect the alignment marks AM (four positions in total) on both sides formed on the sheet substrate FB with the first position detection device 60, thereby Measure speed, left / right travel deviation and expansion / contraction state. Further, since the first position detection device 60 is provided above the transport roller RR, the error due to the bending of the sheet substrate FB is made as small as possible.
- the speed alignment control unit 90 sends signals regarding the speed of the sheet substrate FB, the lateral shift, and the expansion / contraction state to the gate droplet applying apparatus 20G so that the gate droplet applying apparatus 20G can apply the droplets at an optimal position. Put out. Similarly, the speed alignment control unit 90 issues an instruction for the speed of the sheet substrate FB and the rotation speed of the printing roller 40 from the detection result of the first position detection device 60.
- the gate droplet applying apparatus 20G is arranged in the Y-axis direction, a plurality of nozzles 22 are arranged in the Y-axis direction, and a plurality of rows of nozzles 22 are also arranged in the X-axis direction.
- the positional relationship of the plurality of nozzles 22 in the XY axis direction is stored in advance.
- the positional relationship between the alignment mark AM and the gate bus line GBL and the source bus line SBL of the field effect transistor is also defined in advance.
- the alignment mark AM and the mold shape of the partition wall BA formed on the fine imprint mold 11 shown in FIG. 2 are transferred to the sheet substrate FB.
- FIG. 7B shows the sheet substrate FB onto which the mold shape has been transferred.
- a predetermined distance PY between the alignment mark AM and the gate bus line GBL is defined in the Y-axis direction
- the alignment mark AM and the source bus line SBL are defined in the X-axis direction.
- a predetermined distance PX is defined.
- the gate droplet applying apparatus 20G applies the timing for applying the metal ink from the nozzles 22 in accordance with the signal relating to the speed of the sheet substrate FB sent from the speed alignment control unit 90, the left and right advancement deviation, and the expansion and contraction state.
- the nozzle 22 for applying the metal ink is switched.
- the droplet applying device 20G can apply the metal ink from the appropriate nozzle 22 at an appropriate timing based on the signal relating to the speed of the sheet substrate FB, the lateral shift and the expansion / contraction state.
- the other liquid droplet application devices 20 can similarly receive the signal from the velocity alignment control unit 90 and adjust the position where the ink or the like is applied to the sheet substrate FB.
- the cutting device 30 receives a signal from the speed alignment control unit 90 and adjusts the cutting position.
- one alignment mark AM is provided for the partition wall BA of the field effect transistors in one row in the X-axis direction.
- a plurality of alignment marks AM may be provided for the partition walls BA of one row of field effect transistors. If there is a space in the sheet substrate FB, the alignment mark AM may be provided not only on both sides of the sheet substrate FB but also in the central region.
- the alignment mark AM has been shown as an example of a cross shape, but may have other mark shapes such as a circular mark or an oblique straight mark.
- FIG. 8 is a schematic flowchart of the manufacturing process of the organic EL element 50.
- Step P1 alignment marks AM and partition walls BA such as thin film transistors and light emitting layers are formed on the sheet substrate FB by the imprint roller 10 by thermal transfer. Note that the alignment mark AM and the partition wall BA are preferably formed at the same time because the mutual positional relationship is important.
- Step P2 the first position detection device 60 images the alignment mark AM, so that the speed calculation unit 91 and the expansion / contraction calculation unit 93 of the speed alignment control unit 90 cause the speed of the heat-treated sheet substrate FB and the left and right traveling deviations. And the expansion / contraction state is calculated.
- step P3 based on the signal regarding the speed of the sheet substrate FB, the lateral shift and expansion / contraction state from the speed alignment controller 90, the gate droplet applying apparatus 20G and the insulating layer droplet applying apparatus 20I.
- the source and drain droplet applying devices 20SD sequentially apply metal ink for various electrodes.
- Step P4 the first position detection device 60 images the alignment mark AM, and the speed calculation unit 91 and the expansion / contraction calculation unit 93 calculate the speed, the lateral shift, and the expansion / contraction state of the heat-treated sheet substrate FB.
- step P5 based on the signal from the velocity alignment control unit 90, the laser beam LL of the cutting device 30 forms a channel that is a gap between the source electrode S and the drain electrode D.
- Step P6 the organic semiconductor droplet coating apparatus 20OS forms the organic semiconductor in the gap between the source electrode S and the drain electrode D based on the signal from the speed alignment controller 90.
- Step P7 the second position detection device 69 images the alignment mark AM, and the speed alignment control unit 90 calculates the speed, the lateral shift, and the expansion / contraction state of the heat-treated sheet substrate FB.
- Step P8 based on the signal from the speed alignment controller 90, the printing roller 40 forms an RGB light emitting layer.
- Step P9 the first position detection device 60 images the alignment mark AM, and the speed alignment control unit 90 calculates the speed, the left-right advancement deviation, and the expansion / contraction state of the heat-treated sheet substrate FB.
- Step P ⁇ b> 10 the insulating layer droplet applying apparatus 20 ⁇ / b> I forms the insulating layer I based on the signal from the speed alignment control unit 90.
- Step P11 the first position detection device 60 images the alignment mark AM, and the speed alignment control unit 90 calculates the speed, the left-right advancement deviation, and the expansion / contraction state of the heat-treated sheet substrate FB.
- step P12 based on the signal corrected by the speed alignment controller 90, the ITO electrode droplet applying apparatus 20IT forms the ITO electrode.
- the fine imprint mold 11 (FIG. 2) is premised on forming the alignment mark AM on the sheet substrate FB.
- the sheet substrate FB on which the alignment marks AM are formed in advance may be purchased, and the fine imprint mold 11 may form only the partition walls BA on the sheet substrate FB.
- the positional relationship in the XY direction between the alignment mark AM and the partition wall BA may be measured by a measurement device (not shown).
- the manufacturing apparatus of the present invention can be applied to a liquid crystal display element, a field emission display, and the like.
- the heat treatment apparatus BK is provided in the manufacturing apparatus of the embodiment, an ink or solution that does not require heat treatment has been proposed by improving the metal ink or the light emitting layer solution. For this reason, it is not always necessary to provide the heat treatment apparatus BK in this embodiment.
- Holding unit 70 Laser interferometer (71 ... Laser interferometer body, 72 ... Fixed mirror, 73 ... Moving mirror) 74, 75 ... Laser light 90 ... Speed & alignment control unit 100 ... Manufacturing apparatus AM ... Alignment mark BA ... Partition wall BK ... Heat treatment apparatus D ... Drain electrode FB ... Sheet substrate G ... Gate electrode GBL Gate bus line GR ... Glass substrate I ... Gate insulating layer IR ... Light emitting layer ITO Transparent electrode LL ... Laser light OS ... Organic semiconductor layer P ... Pixel electrode PX ... Predetermined distance PY in the X-axis direction ... Predetermined distance RL in the Y-axis direction ... Supply roll RR ... Roller S ... Source electrode SBL ... Source bus line
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Abstract
Description
そこで、基板に対しても高精度に表示素子を形成するため、高精度に位置検出できる表示素子用の製造装置を提供する。
この製造方法により、基板の所定方向の伸縮を把握することができ、その伸縮に応じて基板に処理を施すことができるため、熱などによって基板が伸縮した場合であっても正確に基板を処理することができる。
この製造装置により、基板の所定方向の伸縮又は搬送速度を把握することができ、その伸縮又は搬送速度に応じて基板に処理を施すことができるため、正確に基板を処理することができる。
図1(a)は、有機EL素子50の拡大上面図であり、図1(b)及び(c)は、(a)のb-b断面図及びc-c断面図である。有機EL素子50はボトムコンタクト型である。有機EL素子50は、可撓性のシート基板FB(以下はシート基板FBとする)にゲート電極G、ゲート絶縁層I、ソース電極S、ドレイン電極D、画素電極P及び有機半導体層OSが形成される。
図2は、シート基板FBに、図1で示した画素電極P及び発光層IRなど有する有機EL素子50を製造する製造装置100の構成を示した概略図である。
供給ロールRLから送り出されたシート基板FBは、最初にシート基板FBに隔壁BAを形成する隔壁形成工程に入る。隔壁形成工程では、インプリントローラ10がシート基板FBを押圧するとともに、押圧された隔壁BAが形状を保つように熱転写ローラ15でシート基板FBをガラス転移点以上に熱する。インプリントローラ10のローラ表面は鏡面仕上げされており、そのローラ表面にSiC、Taなどの材料で構成された微細インプリント用モールド11が取り付けられている。
薄膜トランジスタ(TFT)としては、無機半導体系のものでも有機半導体を用いたものでも良い。有機半導体を用いて薄膜トランジスタを構成すれば、印刷法や液滴塗布法を活用して薄膜トランジスタを形成できる。
有機EL素子用の製造装置100は、画素電極P上に有機EL素子50の発光層IR(図1を参照)の形成工程を引き続き行う。製造装置100は、発光層形成工程では、印刷ローラ40を使用する。リン光性化合物を染み込ませた印刷ローラ40が回転して、画素電極PXにリン光性化合物ELの層が形成される。印刷法ではなく液滴塗布法でリン光性化合物ELが塗布されてもよい。
続いて、緑色発光層用の印刷ローラ40Gは、G溶液を画素電極P上に塗布する。G溶液は、ホスト材PVKに緑ドーパント材を1、2-ジクロロエタン中に溶解した溶液とする。
さらに、青色発光層用の印刷ローラ40Bは、B溶液を画素電極P上に塗布する。B溶液は、ホスト材PVKに青ドーパント材を1、2-ジクロロエタン中に溶解した溶液とする。その後、熱処理装置BKは熱風又は遠赤外線などの放射熱により発光層溶液を乾燥し硬化する。
図3は第1位置検出装置60の斜視図である。図3で示されるシート基板FBは搬送方向(+X軸方向)に移動する。図3ではアライメントマークAMは、シート基板FBの右側及び左側にX軸方向に均等の間隔で形成されている。以下、右側の第1位置検出装置60Rの下にあるアライメントマークAMをアライメントマークAMR1及びアライメントマークAMR2と呼ぶ。左側の第1位置検出装置60Lの下にあるアライメントマークAMをアライメントマークAML1及びアライメントマークAML2と呼ぶ。また特にそれらを区別しないときにはこれらすべてをアライメントマークAMと呼ぶ。
図5は、第1位置検出装置60の第1アライメント系61と第2アライメント系62との距離間の校正を示した図である。
第1アライメント系61と第2アライメント系62とは低い熱膨張係数の材料で構成される保持部63により固定されているが、第1アライメント系61と第2アライメント系62との距離間は温度などの影響で変動する。そこで、有機EL素子用の製造装置100はシート基板FBを処理する前に校正用の基礎マークBMを正確に形成した校正用基板GRを通過させる。そして第1アライメント系61と第2アライメント系62との距離間の校正が行われる。
図6はレーザー干渉計と第1位置検出装置60とを示した斜視図である。図6(a)は第1位置検出装置60の右側の第1位置検出装置60Rのレーザー干渉計70を示し、図6(b)は第2位置検出装置69の右側の第2位置検出装置69Rのレーザー干渉計70を示している。なお、左側の第1位置検出装置60L及び左側の第2位置検出装置69Lのレーザー干渉計70も同様な構成であるため図示していない。
図7(a)は、第1位置検出装置60及び第1位置検出装置60とゲート用液滴塗布装置20Gとの上面図を示している。以下は、処理装置の代表としてゲート用の液滴塗布装置20Gについて説明する。第2位置検出装置69については説明を割愛する。
図示しないが、他の液滴塗布装置20も同様に、速度アライメント制御部90からの信号を受け取ってインクなどをシート基板FBに塗布する位置を調整することができる。また、切断装置30も同様に、速度アライメント制御部90からの信号を受け取って切断位置を調整する。
図8は、有機EL素子50の製造工程の概略フローチャートである。
ステップP1において、インプリントローラ10によりシート基板FBにアライメントマークAMと、薄膜トランジスタ及び発光層などの隔壁BAとが熱転写で形成される。なお、アライメントマークAMと隔壁BAとは相互の位置関係が重要であるため同時に形成されることが好ましい。
次に、ステップP3では、速度アライメント制御部90からのシート基板FBの速度、左右の進行ずれ及び伸縮状態に関する信号に基づいて、ゲート用液滴塗布装置20G、絶縁層用の液滴塗布装置20I、ソース用及びドレイン用の液滴塗布装置20SDが各種電極用のメタルインクなどを順次塗布する。
次に、ステップP5では、速度アライメント制御部90からの信号に基づいて、切断装置30のレーザー光LLがソース電極Sとドレイン電極Dとの間隙であるチャネルを形成する。
次に、ステップP8では、速度アライメント制御部90から信号に基づいて、印刷ローラ40がRGBの発光層を形成する。
次に、ステップP10では、速度アライメント制御部90からの信号に基づいて、絶縁層用の液滴塗布装置20Iが絶縁層Iを形成する。
次に、ステップP12では、速度アライメント制御部90が補正した信号に基づいて、ITO電極用の液滴塗布装置20ITがITO電極を形成する。
また、実施例の製造装置には熱処理装置BKを設けたが、メタルインク又は発光層溶液などの改良によって熱処理が必要でないインク又は溶液が提案されている。このため、本実施例においても熱処理装置BKを必ず設ける必要はない。
11 … 微細インプリント用モールド
15 … 熱転写ローラ
20 … 液滴塗布装置(20G … ゲート用液滴塗布装置、20I … 絶縁層用の液滴塗布装置、20IT … ITO電極用の液滴塗布装置、20OS … 有機半導体液滴塗布装置、20SD … ソース用及びドレイン用並びに画素電極用の液滴塗布装置)
22 … ノズル
30 … 切断装置
40 … 印刷ローラ(40B 青色発光層用の印刷ローラ、40G 緑色発光層用の印刷ローラ、40R 赤色発光層用の印刷ローラ)
50 … 有機EL素子
60 … 位置検出装置(61、65 … 第1アライメント系、62、66 … 第2アライメント系)
63、67 … 保持部
70 … レーザー干渉計 (71 … レーザー干渉計本体、72 … 固定鏡、73 … 移動鏡)
74、75 … レーザー光
90 … 速度&アライメント制御部
100 … 製造装置
AM … アライメントマーク
BA … 隔壁
BK … 熱処理装置
D … ドレイン電極
FB … シート基板
G … ゲート電極
GBL ゲートバスライン
GR … ガラス基板
I … ゲート絶縁層
IR … 発光層
ITO 透明電極
LL … レーザー光
OS … 有機半導体層
P … 画素電極
PX … X軸方向の所定距離
PY … Y軸方向の所定距離
RL … 供給ロール
RR … ローラ
S … ソース電極
SBL … ソースバスライン
Claims (14)
- 所定方向に配列した第1アライメント系及び第2アライメント系で基板上の基準マークを検出し、前記基板の所定方向の伸縮を算出する伸縮算出工程と、
前記基準マーク及び前記基板の所定方向の伸縮に基づいて、処理装置により前記基板の所定の位置に処理を施す処理工程と、
を有することを特徴とする表示素子の製造方法。 - 前記基準マークは、前記所定方向と交差する方向の前記基板の両端に形成される請求項1に記載の表示素子の製造方法。
- 前記伸縮算出工程は、前記所定方向と交差する方向の前記基板の伸縮を算出する請求項2に記載の表示素子の製造方法。
- 所定方向に配列した第1アライメント系及び第2アライメント系で基板上の基準マークを検出し、前記基板が所定方向に送り出される速度を算出する速度算出工程と、
前記基準マーク及び前記基板の所定方向の速度に基づいて、処理装置により前記基板の所定の位置に処理を施す処理工程と、
を有する表示素子の製造方法。 - 前記基板が所定方向に送り出される際に前記基準マークを形成するマーク形成工程を有する請求項1から請求項4のいずれか一項に記載の表示素子の製造方法。
- 前記マーク形成工程において、前記導電部材が印刷又は塗布されるための隔壁を形成する請求項5に記載の表示素子の製造方法。
- 前記処理装置は、前記基板に導電部材を塗布又は印刷する処理を行う請求項1ないし請求項6のいずれか一項に記載の表示素子の製造方法。
- 前記所定方向に予め距離が測定されている一対の基礎マークを、前記第1アライメント系及び前記第2アライメント系で同時に検出して、前記第1アライメント系と前記第2アライメント系との距離を校正する請求項1ないし請求項7のいずれか一項に記載の表示素子の製造方法。
- 基準マークを有する基板を所定方向に搬送する搬送部と、
前記基準マークを検出する第1アライメント系と、
前記第1アライメント系から前記所定方向に所定距離離れて配置され、前記基準マークを検出する第2アライメント系と、
前記基準マークを検出し、前記基板の所定方向の伸縮又は前記基板の搬送速度を算出する算出部と、
前記基板の所定方向の伸縮又は前記基板の搬送速度の少なくとも一方と前記基準マークとに基づいて、前記基板の所定の位置に処理する処理部と、
を有することを特徴とする表示素子の製造装置。 - 前記搬送部は搬送ローラを含み、この搬送ローラの前記基板上で前記第1アライメント系及び第2アライメント系が前記基準マークを検出する請求項9に記載の表示素子の製造装置。
- 前記第1アライメント系と第2アライメント系とが低膨張素材で結合している請求項9又は請求項10に記載の表示素子の製造装置。
- 前記第1アライメント系と第2アライメント系との互いの距離を測定する干渉計が設けられている請求項9から請求項11のいずれか一項に記載の表示素子の製造装置。
- 前記基準マークは前記所定方向と交差する前記基板の両端に形成され、
前記算出部は前記所定方向と交差する方向の前記基板の伸縮を算出する請求項9から請求項12のいずれか一項に記載の表示素子の製造装置。 - 前記基板に前記基準マークを形成するマーク形成部を備える請求項9から請求項13のいずれか一項に記載の表示素子の製造装置。
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TWI503919B (zh) | 2015-10-11 |
US20150311128A1 (en) | 2015-10-29 |
US20180158740A1 (en) | 2018-06-07 |
US9917023B2 (en) | 2018-03-13 |
TWI564989B (zh) | 2017-01-01 |
KR101504388B1 (ko) | 2015-03-19 |
US9086585B2 (en) | 2015-07-21 |
JP5467531B2 (ja) | 2014-04-09 |
JPWO2009157154A1 (ja) | 2011-12-08 |
KR20110025912A (ko) | 2011-03-14 |
TW201001606A (en) | 2010-01-01 |
US20110276306A1 (en) | 2011-11-10 |
US10832977B2 (en) | 2020-11-10 |
TW201545263A (zh) | 2015-12-01 |
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