WO2009151024A1 - Capteur magnétique et module capteur magnétique - Google Patents

Capteur magnétique et module capteur magnétique Download PDF

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Publication number
WO2009151024A1
WO2009151024A1 PCT/JP2009/060451 JP2009060451W WO2009151024A1 WO 2009151024 A1 WO2009151024 A1 WO 2009151024A1 JP 2009060451 W JP2009060451 W JP 2009060451W WO 2009151024 A1 WO2009151024 A1 WO 2009151024A1
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Prior art keywords
soft magnetic
magnetic
magnetic body
sensitivity axis
axis
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PCT/JP2009/060451
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English (en)
Japanese (ja)
Inventor
寛充 佐々木
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アルプス電気株式会社
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Publication of WO2009151024A1 publication Critical patent/WO2009151024A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

Definitions

  • the present invention relates to a magnetic sensor using a magnetoresistive element used as, for example, a geomagnetic sensor.
  • a magnetic sensor using a magnetoresistive effect element can be used, for example, as a geomagnetic sensor which detects geomagnetism by being incorporated in a mobile device such as a mobile phone.
  • the electric resistance value fluctuates with respect to the strength of the magnetic field from the same direction as the sensitivity axis.
  • a geomagnetic sensor is desired to have a magnetic shield effect against a magnetic field (disturbance magnetic field) from the direction orthogonal to the sensitivity axis, and a configuration capable of stably supplying a magnetic field from the same direction as the sensitivity axis to the magnetoresistive element.
  • the present invention is intended to solve the above-mentioned conventional problems, and in particular, while having a magnetic shield against a magnetic field (disturbing magnetic field) from the direction orthogonal to the sensitivity axis, the magnetic field from the sensitivity axis direction is stabilized.
  • An object of the present invention is to provide a magnetic sensor and a magnetic sensor module capable of supplying even a magnetoresistive element.
  • the present invention is a magnetic sensor provided with a magnetoresistive element having a predetermined sensitivity axis
  • the magnetoresistive effect element includes an element portion that exhibits a magnetoresistive effect, and a soft magnetic material.
  • the element portion and the soft magnetic body are arranged in a non-contact manner so as to be arranged in the order of the soft magnetic body, the element portion, and the soft magnetic body in the direction of the sensitivity axis,
  • the easy magnetization axis of the soft magnetic body is in the same direction as the sensitivity axis.
  • the magnetic field from the same direction as the sensitivity axis can be stably supplied to the magnetoresistive element.
  • a plurality of the element units are arranged at intervals in the same direction as the sensitivity axis, and end portions of the element units are connected to form a meander shape.
  • the soft magnetic body is preferably disposed on both sides of the element unit for each element unit. With the meander shape, the element resistance can be increased, and power consumption can be reduced. Further, by arranging the soft magnetic material for each element portion, the magnetic shield effect in the direction orthogonal to the sensitivity axis can be appropriately improved, and good magnetic sensitivity can be maintained.
  • the soft magnetic body extends in the direction orthogonal to the sensitivity axis to provide the longitudinal direction, and has a magnetic shielding effect on the magnetic field (disturbance magnetic field) from the direction orthogonal to the sensitivity axis. Furthermore, the length dimension of the soft magnetic body in the direction orthogonal to the sensitivity axis is longer than the length dimension of the soft magnetic body in the direction orthogonal to the sensitivity axis, The soft magnetic body can efficiently shield the disturbance magnetic field by including the extending portions extending from both sides in the direction orthogonal to the sensitivity axis of the element portion.
  • a magnetic sensor module includes a plurality of magnetic sensors according to any of the above, and each of the magnetoresistive elements is arranged such that the sensitivity axes of one set of magnetoresistive elements of the plurality of magnetic sensors are orthogonal to each other. Are arranged.
  • the magnetic sensor module of the present invention can be used as a geomagnetic sensor.
  • the magnetic shield effect is provided to the magnetic field (disturbance magnetic field) from the direction orthogonal to the sensitivity axis, while the magnetic field from the same direction as the sensitivity axis is stably stabilized to the magnetoresistance effect element. It can be supplied.
  • FIG. 1 is a view showing particularly a part of a magnetoresistive element of the magnetic sensor in the first embodiment ((a) is a partial plan view, (b) is a height direction along line AA of (a) 2) is a partial plan view showing a portion of the magnetoresistive element, particularly the magnetic sensor in the second embodiment, and FIG. 3 is a partial cross-sectional view of the magnetic sensor in the second embodiment.
  • FIG. 4 is a partially enlarged plan view showing particularly a portion of an element portion in the form of a preferable magnetoresistive element, which is cut in the height direction (Z direction in the figure) along the ⁇ D line and seen in the arrow direction; FIG.
  • FIG. 5 is a view for explaining the relationship between the fixed magnetization direction of the fixed magnetic layer of the magnetoresistive element and the magnetization direction of the free magnetic layer, and the electrical resistance value
  • FIG. 6 is the film thickness direction of the magnetoresistive element.
  • FIG. 7 is a circuit diagram of the magnetic sensor according to the present embodiment.
  • FIG 8 is a perspective view of a geomagnetic sensor (magnetic sensor module) in this embodiment.
  • the magnetic sensor module using the magnetic sensor 1 provided with the magnetoresistance effect element in the present embodiment is used, for example, as a geomagnetic sensor mounted on a portable device such as a mobile phone.
  • the geomagnetic sensor 1 includes a sensor unit 6 in which the magnetoresistive effect elements 2 and 3 and fixed resistance elements 4 and 5 are bridge-connected, and an input terminal 7 electrically connected to the sensor unit 6. It comprises an integrated circuit (IC) 11 provided with a ground terminal 8, a differential amplifier 9, an external output terminal 10 and the like.
  • IC integrated circuit
  • a plurality of element portions 12 having an element length L1 longer than the element width W1 and elongated in the X direction shown in the figure are orthogonal to the X direction.
  • the element portions 12 are arranged in parallel at predetermined intervals in the direction, and the end portions of the respective element portions 12 are electrically connected by the connection electrode portion 13 to form a meander shape.
  • the electrode portion 15 connected to the input terminal 7, the ground terminal 8, and the output extraction portion 14 (see FIG. 7) is connected to one of the element portions 12 at both ends formed in a meander shape.
  • the connection electrode portion 13 and the electrode portion 15 are nonmagnetic conductive materials such as Al, Ta, Au and the like.
  • the connection electrode portion 13 and the electrode portion 15 are formed by sputtering or plating.
  • the element sections 12 constituting the magnetoresistive effect elements 2 and 3 are all configured in the same laminated structure shown in FIG. FIG. 6 shows a cross section cut in the film thickness direction from the direction parallel to the element width W1.
  • the element unit 12 is formed by, for example, laminating the antiferromagnetic layer 33, the pinned magnetic layer 34, the nonmagnetic layer 35, and the free magnetic layer 36 in this order from the bottom, and covering the surface of the free magnetic layer 36 with the protective layer 37. It is The element unit 12 is formed by sputtering, for example.
  • the antiferromagnetic layer 33 is formed of an antiferromagnetic material such as an Ir-Mn alloy (iridium-manganese alloy).
  • the pinned magnetic layer 34 is formed of a soft magnetic material such as a Co--Fe alloy (cobalt-iron alloy).
  • the nonmagnetic layer 35 is Cu (copper) or the like.
  • the free magnetic layer 36 is formed of a soft magnetic material such as a Ni-Fe alloy (nickel-iron alloy).
  • the protective layer 37 is Ta (tantalum) or the like.
  • the nonmagnetic layer 35 is a giant magnetoresistive element (GMR element) formed of a nonmagnetic conductive material such as Cu, but a tunnel magnetoresistive element formed of an insulating material such as Al 2 O 3 (TMR element) or an anisotropic magnetoresistive element (AMR element).
  • GMR element giant magnetoresistive element
  • TMR element tunnel magnetoresistive element formed of an insulating material such as Al 2 O 3 (TMR element) or an anisotropic magnetoresistive element (AMR element).
  • the laminated structure of the element part 12 shown in FIG. 6 is an example, and may be another laminated structure.
  • the free magnetic layer 36, the nonmagnetic layer 35, the pinned magnetic layer 34, the antiferromagnetic layer 33, and the protective layer 37 may be stacked in this order from the bottom.
  • the magnetization direction of the pinned magnetic layer 34 is fixed by the antiferromagnetic coupling between the antiferromagnetic layer 33 and the pinned magnetic layer 34.
  • the pinned magnetization direction (P direction) of the pinned magnetic layer 34 is in the element width direction (Y direction). That is, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 is orthogonal to the longitudinal direction of the element unit 12.
  • the magnetization direction (F direction) of the free magnetic layer 36 fluctuates due to the external magnetic field.
  • the external magnetic field Y1 acts from the same direction as the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 points in the external magnetic field Y1 direction
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach parallel, and the electric resistance value decreases.
  • the external magnetic field Y2 acts from the direction opposite to the fixed magnetization direction (P direction) of the fixed magnetic layer 34, and the magnetization direction (F direction) of the free magnetic layer 36 points in the external magnetic field Y2 direction.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach antiparallel to increase the electric resistance value.
  • the magnetoresistive elements 2 and 3 are formed on a substrate 16.
  • the magnetoresistance effect elements 2 and 3 are covered with an insulating layer 17 such as Al 2 O 3 or SiO 2 .
  • the insulating layer 17 also fills the space between the element portions 12 constituting the magnetoresistive effect elements 2 and 3.
  • the insulating layer 17 is formed by sputtering, for example.
  • the upper surface of the insulating layer 17 is formed to be a flat surface using, for example, a CMP technique.
  • the upper surface of the insulating layer 17 may be formed as a concavo-convex surface following the step between the element portion 12 and the substrate 16.
  • the soft magnetic body 18 is provided between the element units 12 constituting the magnetoresistive effect elements 2 and 3 and outside the element unit 12 located on the outermost side.
  • the soft magnetic body 18 is formed into a thin film by sputtering or plating, for example.
  • the soft magnetic body 18 is formed of NiFe, CoFe, CoFeSiB, CoZrNb, or the like.
  • the width dimension W2 of the soft magnetic body 18 is larger than the element width W1 of the element unit 12, but is not limited.
  • the length dimension L2 of the soft magnetic body 18 is longer than the element length L1 of the element portion 12, and as shown in FIG. 1A, the soft magnetic body 18 extends in the longitudinal direction (X direction) of the element portion 12.
  • An extending portion 18a extending in the longitudinal direction from both sides of the
  • the soft magnetic body 18 is formed on the insulating layer 17 between the element units 12. Although not shown, the soft magnetic body 18 and the space between the soft magnetic bodies 18 are covered with an insulating protective layer.
  • the electrode portion 13 bypasses the soft magnetic body 18 in FIG. 1, the electrode portion 13 may cross the planar magnetic body 18 as long as it is electrically insulated from the soft magnetic body 18 a. Further, in this case, the electrode portion 13 may be formed on either the lower portion or the upper portion of the soft magnetic body 18.
  • the element width W1 of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 is preferably in the range of 2 to 6 ⁇ m in order to use shape anisotropy when used as a geomagnetic sensor (see FIG. 1 (a)).
  • the element length L1 of the element section 12 is preferably in the range of 60 to 100 ⁇ m (see FIG. 1A).
  • the film thickness T1 of the element section 12 is preferably in the range of 200 to 300 ⁇ (see FIG. 1B).
  • the average width W2 of the soft magnetic body 18 is preferably in the range of 1 to 6 ⁇ m in this embodiment when used as a geomagnetic sensor (see FIG. 1A).
  • the length dimension L2 of the soft magnetic body 18 is preferably in the range of 80 to 200 ⁇ m (see FIG. 1A). Further, the film thickness T2 of the soft magnetic body 18 is preferably in the range of 0.2 to 1 ⁇ m (see FIG. 1 (b)).
  • the aspect ratio (element length L1 / element width W1) of the element unit 12 is preferably 10 or more when used as a geomagnetic sensor.
  • the aspect ratio (length dimension L 2 / width dimension W 2) of the soft magnetic body 18 is preferably equal to or more than the aspect ratio of the element unit 12.
  • the length dimension T8 of the extended portion 18g of the soft magnetic body 18 is preferably 20 ⁇ m or more (see FIG. 1A).
  • the distance T3 between the soft magnetic bodies 18 is preferably 2 to 8 ⁇ m in the width dimension W2 or more of the soft magnetic bodies (see FIG. 1 (b)).
  • the distance T4 in the Y direction between the element portion 12 and the soft magnetic body 18 adjacent to the element portion 12 is preferably 0 to 3 ⁇ m (see FIG. 1B).
  • the distance T5 between the soft magnetic body 18 and the element portion 12 in the height direction (Z direction) is preferably 0.1 to 1 ⁇ m (see FIG. 1B).
  • the magnetic sensor 1 shown in FIG. 1 is for detecting geomagnetism from a direction parallel to the Y direction shown in the drawing. Therefore, the sensitivity axes of the magnetoresistance effect elements 2 and 3 are in the Y direction shown in the drawing.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 described later is oriented in the Y direction shown in the figure, which is a sensitivity axis.
  • the element unit 12 and the soft magnetic body 18 are arranged in a noncontact manner so that the soft magnetic body 18, the element unit 12 and the soft magnetic body are arranged in the order of the sensitivity axis.
  • the soft magnetic body 18 preferably has an elongated shape elongated in a direction perpendicular to the sensitivity axis (X direction in the drawing).
  • the magnetization easy axis of the soft magnetic body 18 is in the same direction as the sensitivity axis (Y direction in the drawing).
  • a configuration in which the magnetization easy axis of the soft magnetic body 18 is in the orthogonal direction (X direction in the drawing) (coaxial with shape anisotropy) is taken as a comparative example.
  • a magnetic field is applied to the form of the comparative example from the same direction as the sensitivity axis (in the Y direction shown).
  • the magnetization hard axis is the same direction as the sensitivity axis (Y direction in the drawing). Therefore, in the form of the comparative example, as shown in FIG. 9, hysteresis occurs in the magnetization curve of the soft magnetic body 18 with respect to the magnetic field from the same direction as the sensitivity axis.
  • the magnetic field in the same direction as the sensitivity axis supplied from the soft magnetic body 18 to the element unit 12 is not stabilized, and variations in sensor characteristics are likely to occur.
  • the magnetization easy axis of the soft magnetic body 18 is in the same direction as the sensitivity axis (in the Y direction in the drawing) as in the present embodiment, as shown in FIG. There is no hysteresis in the magnetization curve of the magnetic body 18. As a result, the magnetic field in the same direction as the sensitivity axis supplied from the soft magnetic body 18 to the element unit 12 is stabilized, and highly accurate sensor characteristics can be obtained.
  • the magnetization easy axis of the soft magnetic body 18 is in the orthogonal direction (X direction in the drawing), so as shown in FIG. There is no hysteresis.
  • the orthogonal direction (X direction in the drawing) is the hard axis of magnetization. Therefore, as shown in FIG. 10, in the embodiment, hysteresis occurs in the magnetization curve with respect to the magnetic field from the orthogonal direction (X direction in the drawing).
  • the soft magnetic body 18 directly from the soft magnetic body 18 to the element portion 12 in the orthogonal direction.
  • the magnetic permeability of the soft magnetic body 18 in the orthogonal direction is larger than that of the magnetic field, and the magnetic flux that has penetrated the soft magnetic body 18 once passes only through the soft magnetic body, and is transmitted to the element portion 12.
  • the amount of magnetic field affected is very small and the orthogonal magnetic field is shielded and has little effect on the sensor characteristics.
  • the soft magnetic body 18 is deposited while applying a magnetic field in the Y direction ( Film formation).
  • a plurality of element units 12 are arranged in parallel at intervals in the orthogonal direction (X direction), and an intermediate permanent magnet layer 60 is provided in the interval between the element units 12.
  • an element connection body 61 configured by each element portion 12 and the intermediate permanent magnet layer 60 extends in a strip shape in the X direction in the drawing.
  • outer permanent magnet layers 65 are provided on both sides of the element portion 12 positioned on both sides in the X direction of the element coupling body 61 in the drawing.
  • a bias magnetic field acts on the element portion 12 from the permanent magnet layers 60 and 65 from the X direction shown in the drawing.
  • the free magnetic layer 36 constituting the element unit 12 is directed in the X direction in the figure without any magnetic field.
  • the element length L3 of the element coupling body 61 is formed larger than the element width W1.
  • a plurality of element connectors 61 are arranged side by side at intervals in the same direction (Y direction) as the sensitivity axis, and the end portions of the element connectors 61 are connected by the connection electrode portion 62 to form a meander magnetic Resistance effect elements 2 and 3 are configured.
  • the plurality of element portions 12 are connected by the intermediate permanent magnet layer 60, the outer permanent magnet layer 65, and the connection electrode portion 62 to form a meander shape in which the total element length is long.
  • the power consumption can be reduced and the power consumption can be reduced.
  • the element connection body 61 is formed of the plurality of element portions 12 and the intermediate permanent magnet layer 60, and the plurality of element connection bodies 61 are arranged in parallel in the element width direction.
  • the connection electrodes 62 electrically connect the outer permanent magnet layers 65 formed in the above. Therefore, as compared with the configuration in which all the element units 12 are arranged in parallel in the same direction (Y direction) in the same direction as the sensitivity axis and the end portions of each element unit 12 are connected by the connection electrode unit 62 (intermediate permanent magnet In the embodiment where the layer 60 is not provided), the length dimension of the magnetoresistive effect elements 2 and 3 in the Y direction can be reduced.
  • connection electrode portions 62 connecting between the outer permanent magnet layers 65 provided on both sides of the element coupling body 61 are formed in a linear shape (stripe) in the Y direction.
  • the connection electrode portion 62 passes under the soft magnetic body 18. That is, the connection electrode portion 62 and the soft magnetic body 18 intersect in the height direction (the Z direction in the figure).
  • connection electrode portion 13 is formed to bypass the soft magnetic body 18 in plan view, but in FIG. 2, the connection electrode portion 13 and the soft magnetic body 18 are in the height direction (Z direction shown) Since they intersect at this point, the length dimension of the magnetoresistive elements 2 and 3 in the X direction can be reduced. In addition, the insulation between the connection electrode portion 62 and the soft magnetic body 18 is low, and even if a short circuit occurs, the sensor characteristics are not significantly affected. Further, by forming the connection electrode portion 62 with a nonmagnetic good conductor, parasitic resistance can be reduced as compared to the case where the connection electrode portion 62 is formed with a permanent magnet layer, and when formed with a permanent magnet layer, the influence of the bias magnetic field is soft. Although the shield effect is reduced by affecting the magnetic body 18, such a problem does not occur in the present embodiment.
  • the soft magnetic body 18 extends in the orthogonal direction (X direction in the figure), and the magnetization easy axis of the soft magnetic body 18 is in the same direction as the sensitivity axis Y direction).
  • connection electrode portion 62 intersects the soft magnetic body 18, but an insulating layer is formed between the electrode portion 19 and the soft magnetic body 18.
  • connection electrode portion 62 may bypass the outside of the soft magnetic body 18 without crossing.
  • the connection electrode portion 62 may be formed on either the lower portion or the upper portion of the soft magnetic body 18 as long as it is electrically insulated from the soft magnetic body 18.
  • the antiferromagnetic layer 33, the pinned magnetic layer 34 and the nonmagnetic layer 35 constituting each element portion 12 are not divided at the formation position of the permanent magnet layers 60 and 65 but integrated. Is preferred. That is, at the formation positions of the permanent magnet layers 60 and 65, the protective layer 37 and the free magnetic layer 36 constituting the element unit 12 are scraped by ion milling or the like to form the concave portion 63. Thus, the nonmagnetic layer 35 is exposed at the bottom surface 63 a of the recess 63. Alternatively, the recess 63 may be formed by scraping a part of the nonmagnetic layer 35.
  • the permanent magnet layers 60 and 65 are provided in the recess 63.
  • the magnetization of the pinned magnetic layer 34 can be stabilized in the Y direction shown in the drawing, and uniaxial anisotropy can be improved.
  • the electrical contact between the permanent magnet layers 60 and 65 and the element unit 12 is The parasitic resistance tends to increase because it is a side surface, but the parasitic resistance can be reduced by the planar contact of the electrical contact between the permanent magnet layers 60 and 65 and the element unit 12 as in the present embodiment.
  • a low resistance layer 64 having a resistance value smaller than that of the intermediate permanent magnet layer 60 be formed on the upper surface of the intermediate permanent magnet layer 60 in an overlapping manner.
  • the low resistance layer 64 is preferably formed of a nonmagnetic good conductor such as Au, Al or Cu.
  • the low resistance layer 64 is formed by sputtering or plating in the same manner as the permanent magnet layer 60. By superimposing the low resistance layer 64 on the intermediate permanent magnet layer 60 as shown in FIG. 3, the parasitic resistance can be more effectively reduced.
  • the connection electrode portion 62 with low resistance is formed over the outer permanent magnet layer 65, and the parasitic resistance can be more effectively reduced.
  • the aspect ratio of the element unit 12 be small.
  • the aspect ratio of the element unit 12 is preferably 3 or less, and more preferably less than 1.
  • the film thickness of the permanent magnetic layer for appropriately supplying the bias magnetic field to the element unit 12 can also be reduced.
  • the soft magnetic body 18 may not be provided at the same position with respect to each element unit 12.
  • the soft magnetic body 18 is provided immediately above the element portion 12 located near the center, and the soft magnetic bodies 18 are provided on both sides of the element portion 12 in the element portion 12 located laterally.
  • the form in which the soft magnetic bodies 18 are disposed above and below the element parts 12 and the form in which the soft magnetic bodies 18 are disposed laterally of the element parts 12 and in the film thickness direction are not excluded.
  • the magnetic sensor 1 in the present embodiment is used, for example, as a geomagnetic sensor (magnetic sensor module) shown in FIG.
  • Each of the X axis magnetic field detection unit 50, the Y axis magnetic field detection unit 51, and the Z axis magnetic field detection unit 52 is provided with a sensor unit of a bridge circuit shown in FIG.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element unit 12 of the magnetoresistance effect elements 2 and 3 is directed to the X direction which is the sensitivity axis.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element portion 12 of the magnetoresistive effect elements 2 and 3 is directed to the Y direction which is the sensitivity axis, and further, in the Z axis magnetic field detection portion 52
  • the pinned magnetization direction (P direction) of the pinned magnetic layer 34 of the element portion 12 of the elements 2 and 3 is in the Z direction which is the sensitivity axis.
  • the X axis magnetic field detection unit 50, the Y axis magnetic field detection unit 51, the Z axis magnetic field detection unit 52, and the integrated circuit (ASIC) 54 are all provided on a base 53.
  • the formation surfaces of the magnetoresistance effect elements 2 and 3 of the X axis magnetic field detection unit 50 and the Y axis magnetic field detection unit 51 are both XY planes, but the magnetoresistance effect elements 2 and 3 of the Z axis magnetic field detection unit 52
  • the formation surface of the magnetoresistive effect elements 2 and 3 of the Z axis magnetic field detection unit 52 is the XZ plane, and the magnetoresistive effect elements 2 of the X axis magnetic field detection unit 50 and the Y axis magnetic field detection unit 51 are formed.
  • And 3 are perpendicular to each other.
  • the magnetic shield effect is provided in the direction orthogonal to the sensitivity axis direction, and an appropriate sensitivity is provided in the sensitivity axis direction. Therefore, even if two or more detection units of the X-axis magnetic field detection unit 50, the Y-axis magnetic field detection unit 51, and the Z-axis magnetic field detection unit 52 are provided on the base 53, each detection unit is orthogonal to the sensitivity axis direction.
  • the magnetic field from the direction can be appropriately magnetically shielded, and the geomagnetism from the direction of the sensitivity axis of each detection unit can be appropriately detected.
  • a module combining a geomagnetic sensor and an acceleration sensor or the like may be used.
  • FIG. 1 The figure which shows especially the part of a magnetoresistive effect element of the magnetic sensor in 1st Embodiment ((a) is a partial plan view, (b) is a height direction along the AA line of (a) (the Z direction shown) ) And a partial sectional view seen from the direction of the arrow), A partial plan view showing particularly a part of a magnetoresistive element of the magnetic sensor in the second embodiment; A partially enlarged cross-sectional view taken along the line DD in FIG.
  • FIG. 1 A partially enlarged plan view showing particularly a portion of the element portion in the form of a preferred magnetoresistive element; The figure for demonstrating the relationship between the fixed magnetization direction of the fixed magnetic layer of a magnetoresistive effect element, the magnetization direction of a free magnetic layer, and an electrical resistance value.
  • FIG. 1 A sectional view showing a cut surface when the magnetoresistive effect element is cut in the film thickness direction, A circuit diagram of the magnetic sensor of the present embodiment, FIG.
  • FIG. 6 is a perspective view of a geomagnetic sensor (magnetic sensor module) in the present embodiment,
  • the magnetization curve of the soft magnetic material (the easy magnetization axis is in the orthogonal direction (X direction in the drawing)) in the comparative example,
  • a magnetization curve of the soft magnetic material according to the embodiment (the magnetization easy axis is in the same direction as the sensitivity axis (Y direction in the drawing)),

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Abstract

L’invention concerne un capteur magnétique produisant un champ magnétique stable dans la direction d’un axe de sensibilité, appliqué à un élément à effet magnétorésistif, et doté d’un blindage magnétique vis-à-vis d’un champ magnétique (parasite) dans une direction orthogonale à celle de l’axe de sensibilité. L’invention concerne également un module capteur magnétique. Le capteur magnétique comprend un élément à effet magnétorésistif présentant un axe de sensibilité prédéfini. L’élément à effet magnétorésistif est doté d’une partie à éléments (12) produisant un effet magnétorésistif, et de corps magnétiques doux (18).  La partie à éléments (12) et les corps magnétiques doux (18) sont agencés sans se toucher dans la direction de l’axe de sensibilité dans l’ordre suivant : corps magnétique (18), partie à éléments (12) et corps magnétique doux (18). L’axe de facile aimantation des corps magnétiques doux (18) possède la même direction (direction Y) que l’axe de sensibilité.
PCT/JP2009/060451 2008-06-11 2009-06-08 Capteur magnétique et module capteur magnétique WO2009151024A1 (fr)

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JP2008-152729 2008-06-11

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Cited By (9)

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WO2012081377A1 (fr) * 2010-12-16 2012-06-21 アルプス電気株式会社 Capteur magnétique et son procédé de fabrication
WO2012096132A1 (fr) * 2011-01-13 2012-07-19 アルプス電気株式会社 Capteur magnétique
JP2013055281A (ja) * 2011-09-06 2013-03-21 Alps Green Devices Co Ltd 電流センサ
US9599681B2 (en) 2012-02-07 2017-03-21 Asahi Kasei Microdevices Corporation Magnetic sensor and magnetic detecting method of the same
CN108627781A (zh) * 2017-03-24 2018-10-09 Tdk株式会社 磁传感器
US10261138B2 (en) 2017-07-12 2019-04-16 Nxp B.V. Magnetic field sensor with magnetic field shield structure and systems incorporating same
JP2019518956A (ja) * 2016-06-07 2019-07-04 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 補償コイルを有する磁気抵抗センサ
CN109974568A (zh) * 2017-12-27 2019-07-05 Tdk株式会社 磁传感器
US10718825B2 (en) 2017-09-13 2020-07-21 Nxp B.V. Stray magnetic field robust magnetic field sensor and system

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JPS58197892A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 磁場検出素子
JP2004317446A (ja) * 2003-04-18 2004-11-11 Asahi Kasei Electronics Co Ltd 磁気センサ
JP2005183614A (ja) * 2003-12-18 2005-07-07 Yamaha Corp 磁気センサ

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CN103262276A (zh) * 2010-12-16 2013-08-21 阿尔卑斯电气株式会社 磁传感器以及磁传感器的制造方法
JPWO2012081377A1 (ja) * 2010-12-16 2014-05-22 アルプス電気株式会社 磁気センサ及び磁気センサの製造方法
WO2012081377A1 (fr) * 2010-12-16 2012-06-21 アルプス電気株式会社 Capteur magnétique et son procédé de fabrication
WO2012096132A1 (fr) * 2011-01-13 2012-07-19 アルプス電気株式会社 Capteur magnétique
CN103299202A (zh) * 2011-01-13 2013-09-11 阿尔卑斯电气株式会社 磁传感器
JP5518215B2 (ja) * 2011-01-13 2014-06-11 アルプス電気株式会社 磁気センサ
JP2013055281A (ja) * 2011-09-06 2013-03-21 Alps Green Devices Co Ltd 電流センサ
US9599681B2 (en) 2012-02-07 2017-03-21 Asahi Kasei Microdevices Corporation Magnetic sensor and magnetic detecting method of the same
JP2019518956A (ja) * 2016-06-07 2019-07-04 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 補償コイルを有する磁気抵抗センサ
CN108627781A (zh) * 2017-03-24 2018-10-09 Tdk株式会社 磁传感器
CN108627781B (zh) * 2017-03-24 2020-11-06 Tdk株式会社 磁传感器
US10261138B2 (en) 2017-07-12 2019-04-16 Nxp B.V. Magnetic field sensor with magnetic field shield structure and systems incorporating same
EP3447513A3 (fr) * 2017-07-12 2019-07-24 Nxp B.V. Capteur de champ magnétique comportant une structure de blindage de champ magnétique et système l'incorporant
US10718825B2 (en) 2017-09-13 2020-07-21 Nxp B.V. Stray magnetic field robust magnetic field sensor and system
CN109974568A (zh) * 2017-12-27 2019-07-05 Tdk株式会社 磁传感器
JP2019117087A (ja) * 2017-12-27 2019-07-18 Tdk株式会社 磁気センサ

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