WO2009146606A1 - Solution de nettoyage pour éliminer des résidus de gravure plasma - Google Patents

Solution de nettoyage pour éliminer des résidus de gravure plasma Download PDF

Info

Publication number
WO2009146606A1
WO2009146606A1 PCT/CN2009/000623 CN2009000623W WO2009146606A1 WO 2009146606 A1 WO2009146606 A1 WO 2009146606A1 CN 2009000623 W CN2009000623 W CN 2009000623W WO 2009146606 A1 WO2009146606 A1 WO 2009146606A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma etching
ether
cleaning solution
etching residue
residue cleaning
Prior art date
Application number
PCT/CN2009/000623
Other languages
English (en)
Chinese (zh)
Inventor
刘兵
彭洪修
于昊
Original Assignee
安集微电子科技(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子科技(上海)有限公司 filed Critical 安集微电子科技(上海)有限公司
Priority to CN200980121263.5A priority Critical patent/CN102047184B/zh
Publication of WO2009146606A1 publication Critical patent/WO2009146606A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the invention relates to a cleaning liquid in a semiconductor manufacturing process, and in particular to a plasma etching residue cleaning liquid.
  • the application, exposure and imaging of the photoresist layer is a necessary process step for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (i.e., after coating, imaging, ion implantation, and etching of the photoresist layer). Ion bombardment in the doping step hardens the photoresist layer polymer, thus making the photoresist layer less soluble and more difficult to remove.
  • this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
  • the first step utilizes dry ashing to remove most of the photoresist layer (PR); the second step utilizes the corrosion inhibitor composition wet etch/clean process to remove and clean the remaining photoresist layer, typically in the form of a cleaning solution. / rinse / deionized water rinse. Only the residual polymer photoresist layer and inorganic matter can be removed in this process, and the damage to the metal layer such as the aluminum layer cannot be attacked.
  • Typical cleaning solutions in the prior art are as follows: amine cleaning solution, semi-aqueous amine based (non-hydroxylamine) cleaning solution and fluorine cleaning solution.
  • the first two types of cleaning fluids need to be cleaned at high temperatures, generally between 60 C and 80 ° C, and there is a problem of high corrosion rate to metals; while existing fluorine-based cleaning solutions can be used at lower temperatures (room temperature).
  • Cleaning is carried out at 50 ° C), but there are still various disadvantages, such as the inability to simultaneously control the corrosion of metal and non-metal substrates, and the change in the size of the channel characteristics after cleaning, thereby changing the semiconductor structure; In terms of its large etching rate, the cleaning operation window is relatively small.
  • the cleaning liquid composition disclosed in the patent US 6,828,289 comprises: Flushing, organic polar solvent, fluoride and water, and the pH is between 3 and 7, wherein the acidic buffer consists of an organic carboxylic acid or a polybasic acid and a corresponding ammonium salt, and the composition ratio is 10:1 to 1 : 10 between.
  • a fluorine-containing cleaning liquid is disclosed in the patent US Pat. No. 5,698, 503, but the use of ethylene glycol in a large amount, the viscosity and surface tension of the cleaning liquid are large, thereby affecting the cleaning effect.
  • a cleaning composition for a fluorine-containing substance comprising a fluorine-containing substance, an inorganic or organic acid, a quaternary ammonium salt and an organic polar solvent, having a pH of from 7 to 11, is disclosed in the patent US Pat. No. 5,972,862, which is The problem.
  • the technical problem to be solved by the present invention is that in order to overcome the cleaning process in the semiconductor manufacturing process, the conventional amine cleaning liquid and the semi-aqueous amine based cleaning liquid need to be cleaned at a high temperature, and the corrosion rate to the metal is large, and the existing one contains After cleaning, the fluorine cleaning solution is easy to cause changes in the channel feature size and the cleaning operation window is small, and provides a safe, healthy and effective plasma etching residue cleaning liquid.
  • the present invention discloses a plasma etch residue cleaning solution comprising a solvent, water, a fluoride and a chelating agent, which further contains a hydroxyl tertiary amine and a hydroxy primary amine.
  • the weight percentage of the hydroxyl tertiary amine is preferably from 0.1% to 20% ; the weight percentage of the primary hydroxylamine is preferably from 0.01% to 5%, more preferably from 0.1% to 1%;
  • the weight percentage of the solvent is preferably from 30% to 75%; the weight percentage of the water is preferably from 15% to 65%; and the weight percentage of the fluoride is preferably from 0.1% to 20%. %; the weight of the chelating agent The percentage by weight is preferably from 0.1% to 20%, more preferably from 1% to 10%.
  • the hydroxyl tertiary amine is preferably one or more of N, N-dimethylethanolamine, N, N-methylethylethanolamine, N-methyldiethanolamine and triethanolamine.
  • Triethanolamine is preferred;
  • the hydroxyl primary amine is preferably one or more of monoethanolamine, propanolamine, butanolamine and diglycolamine, preferably monoethanolamine.
  • the solvent may be a solvent commonly used in the plasma etching residue cleaning liquid in the field, preferably one of sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolidinone, amide and ether. kind or more.
  • the sulfoxide is preferably one or more of dimethyl sulfoxide, diethyl sulfoxide and methyl sulfoxide; and the sulfone is preferably methyl sulfone, ethyl sulfone and sulfolane.
  • the imidazolidinone is preferably one of 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone, and 1,3-diethyl-2-imidazolidinone Or one or more;
  • the pyrrolidone is preferably one or more of N-methylpyrrolidone, N-ethylpyrrolidone, N-cyclohexylpyrrolidone and N-hydroxyethylpyrrolidone;
  • the imidazolinone is preferably 1,3-dimethyl-2-imidazolidinone;
  • the amide is preferably dimethylformamide and/or dimethylacetamide;
  • the ether is preferably ethylene glycol monoalkane One or more of a group ether, a diethylene glycol monoalkyl ether, a propylene glycol monoalkyl ether, a dipropylene glycol monoalkyl ether, and a tripropylene glycol monoalkyl ether.
  • the ethylene glycol single-chamber ether is preferably one or more of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and ethylene glycol monobutyl ether;
  • the ether is preferably one of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether;
  • the propylene glycol monodecyl ether is preferably propylene glycol monomethyl ether or propylene glycol single One or more of diethyl ether and propylene glycol monobutyl ether;
  • the dipropylene glycol monodecyl ether is preferably one or more of dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether;
  • the tripropylene glycol monoalkyl ether is preferably tripropylene glycol monomethyl ether.
  • the fluoride may be a fluoride commonly used in the fluorine-containing cleaning liquid of the art, and is preferably a salt of hydrogen fluoride (HF), ammonium hydrogen fluoride (NH 4 HF 2 ), hydrogen fluoride and a base.
  • the base is preferably one or more of ammonia water, quaternary ammonium hydroxide and alcohol amine; the salt formed by the hydrogen fluoride and the base is preferably ammonium fluoride (NH 4 F) or tetramethyl.
  • the chelating agent is a commonly used chelating agent in the plasma etching residue cleaning liquid in the field, and generally refers to a compound having a function of chelating a metal ion such as oxalic acid and citric acid.
  • the chelating agent of the present invention is selected from polyfunctional organic compounds containing a nitrogen atom, such as polyamino organic amines and/or amino acids.
  • the polyaminoorganic amine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more preferably pentamethyldiethylenetriamine; Preference is given to one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, aminotriacetic acid and ethylenediaminetetraacetic acid, more preferably iminodiacetic acid.
  • the chelating agent is most preferably a complex chelating agent of a polyamino organic amine and an amino acid, such as a complex chelating agent of iminodiacetic acid and pentamethyldiethylenetriamine, ammonia triacetic acid and pentamethyldiethylene triamine.
  • a compounding chelating agent, or a complex chelating agent of iminodiacetic acid and diethylenetriamine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more
  • the cleaning solution of the present invention may also contain other conventional additives in the art, such as metal aluminum copper corrosion inhibitors (e.g., benzotriazole).
  • metal aluminum copper corrosion inhibitors e.g., benzotriazole
  • the reagents and starting materials used in the present invention are commercially available.
  • the plasma etching residue cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components.
  • the plasma etching residue cleaning liquid of the invention is suitable for a wide range of use temperatures, generally in the room Temperatures up to 55 ° C, and suitable for a variety of cleaning methods, such as batch immersion (w e t Batoh), batch rotary spray (Batch-spray) and single-piece rotary cleaning.
  • the cleaning solution of the present invention can effectively clean plasma etching residues generated in metal and semiconductor manufacturing processes without eroding SiO 2 , ion-enhanced tetraethoxysilane silicon dioxide (PETEOS), silicon, low
  • PETEOS ion-enhanced tetraethoxysilane silicon dioxide
  • the dielectric material and some metal materials can make the metal wafer smooth when the metal wafer is cleaned.
  • the cleaning liquid of the present invention can function in a relatively large temperature range, generally in the range of room temperature to 55 ° C, and at the same time, the cleaning liquid of the present invention maintains a small etching rate of metal and dielectric substances. .
  • the cleaning liquid of the present invention effectively reduces the corrosion of copper while maintaining a low metal aluminum and non-metal TEOS corrosion rate.
  • the cleaning liquid of the present invention has a strong cleaning ability and can simultaneously clean metal wire (Via)/metal pad (Pad) wafers.
  • the cleaning liquid of the present invention has a large operation window and can be applied to a batch-spray/batch-spray/single wafer tool processor.
  • Figure 1 shows an SEM image of an unwashed metal wafer cleaning.
  • Figure 2 is a SEM image of a metal wafer after cleaning in a comparative example.
  • Table 1 shows Examples 1 to 29, and each of the components in each of the examples was simply mixed to obtain a plasma etching residue cleaning liquid.
  • Figure 1 It can be seen from Figure 1 that there are more photoresist residues on the metal lines of the uncleaned metal wafer.
  • Figure 2 shows that although the comparative example can also clean the photoresist residue on the metal wafer, the metal fine line surface ratio Thicker, there are some pits.
  • Figure 3 shows that the cleaning liquid of the present invention can not only clean the photoresist residue on the metal wafer, but also the surface of the fine metal wire is relatively smooth. Thereby, it is advantageous to improve the performance of the semiconductor device.
  • the cleaning solution of the present invention effectively reduces the corrosion of copper while maintaining a low metal aluminum and non-metal TEOS corrosion rate; and it can not only clean the photoresist residue on the metal wafer, but also The thin surface of the metal thin wire is smooth, which is beneficial to improve the performance of the semiconductor device.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

La présente invention concerne une solution de nettoyage pour éliminer des résidus de gravure plasma  contenant du solvant, de l’eau, du fluorure, un agent chélatant, une hydroxylamine tertiaire et une hydroxylamine primaire. La solution de nettoyage présente une forte capacité de nettoyage et peut éliminer efficacement les résidus de gravure plasma sur du métal ou un semi-conducteur. La solution de nettoyage peut être utilisée dans une large plage de températures et présente un plus large créneau de fonctionnement. La solution de nettoyage présente un faible taux de corrosion sur de l’aluminium métallique et le tétraéthoxysilane non métallique, et réduit efficacement la corrosion sur du cuivre.
PCT/CN2009/000623 2008-06-06 2009-06-03 Solution de nettoyage pour éliminer des résidus de gravure plasma WO2009146606A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200980121263.5A CN102047184B (zh) 2008-06-06 2009-06-03 一种等离子刻蚀残留物清洗液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2008100386957A CN101597548A (zh) 2008-06-06 2008-06-06 一种等离子刻蚀残留物清洗液
CN200810038695.7 2008-06-06

Publications (1)

Publication Number Publication Date
WO2009146606A1 true WO2009146606A1 (fr) 2009-12-10

Family

ID=41397714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2009/000623 WO2009146606A1 (fr) 2008-06-06 2009-06-03 Solution de nettoyage pour éliminer des résidus de gravure plasma

Country Status (2)

Country Link
CN (2) CN101597548A (fr)
WO (1) WO2009146606A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015084921A1 (fr) 2013-12-06 2015-06-11 Fujifilm Electronic Materials U.S.A., Inc. Formulation nettoyante pour éliminer des résidus sur des surfaces
EP2930565A1 (fr) * 2014-04-09 2015-10-14 Tokyo Ohka Kogyo Co., Ltd. Solution de décapage pour photolithographie et procédé de formation de motif
EP2593964A4 (fr) * 2010-07-16 2017-12-06 Entegris Inc. Nettoyant aqueux pour l'élimination de résidus post-gravure
CN112859554A (zh) * 2021-02-04 2021-05-28 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液、其制备方法及应用
CN112859553A (zh) * 2021-02-04 2021-05-28 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液、其制备方法及应用
CN112859552A (zh) * 2021-02-04 2021-05-28 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液、其制备方法及应用
US11407966B2 (en) 2018-03-28 2022-08-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
CN116218612A (zh) * 2021-12-06 2023-06-06 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液在清洗半导体器件中的应用
CN116218610A (zh) * 2021-12-06 2023-06-06 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液的制备方法
CN116218611A (zh) * 2021-12-06 2023-06-06 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101114502B1 (ko) * 2010-06-28 2012-02-24 램테크놀러지 주식회사 세정용 조성물 및 이를 이용한 반도체 패턴의 형성방법
CN102827708A (zh) * 2011-06-16 2012-12-19 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN102827707A (zh) * 2011-06-16 2012-12-19 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
CN104946429A (zh) * 2014-03-26 2015-09-30 安集微电子科技(上海)有限公司 一种低蚀刻的去除光阻蚀刻残留物的清洗液
CN108121175B (zh) * 2016-11-29 2021-02-02 安集微电子科技（上海）股份有限公司 一种含氟清洗液
CN106637270A (zh) * 2016-12-27 2017-05-10 昆山欣谷微电子材料有限公司 干蚀刻清洗剥离防护液
CN109976108A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种用于半导体的清洗液
CN112863999B (zh) * 2019-11-26 2023-10-27 中芯国际集成电路制造(上海)有限公司 刻蚀方法
CN113430069A (zh) * 2020-03-23 2021-09-24 上海新阳半导体材料股份有限公司 一种低羟胺水基清洗液、其制备方法及应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972862A (en) * 1996-08-09 1999-10-26 Mitsubishi Gas Chemical Cleaning liquid for semiconductor devices
EP1775337A1 (fr) * 2005-10-14 2007-04-18 Air Products and Chemicals, Inc. Composition aqueuse de nettoyage pour éliminer des résidus et son procédé d'utilisation
CN1966636A (zh) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 清洗液组合物
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性较厚光刻胶清洗液
CN101187787A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂及其清洗方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972862A (en) * 1996-08-09 1999-10-26 Mitsubishi Gas Chemical Cleaning liquid for semiconductor devices
EP1775337A1 (fr) * 2005-10-14 2007-04-18 Air Products and Chemicals, Inc. Composition aqueuse de nettoyage pour éliminer des résidus et son procédé d'utilisation
CN1966636A (zh) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 清洗液组合物
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性较厚光刻胶清洗液
CN101187787A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂及其清洗方法

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2593964A4 (fr) * 2010-07-16 2017-12-06 Entegris Inc. Nettoyant aqueux pour l'élimination de résidus post-gravure
US10927329B2 (en) 2013-12-06 2021-02-23 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
JP2017504190A (ja) * 2013-12-06 2017-02-02 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面上の残渣を除去するための洗浄用製剤
US11639487B2 (en) 2013-12-06 2023-05-02 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11618867B2 (en) 2013-12-06 2023-04-04 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11401487B2 (en) 2013-12-06 2022-08-02 Fujifilm Electronics Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
KR101964901B1 (ko) * 2013-12-06 2019-04-02 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
US10253282B2 (en) 2013-12-06 2019-04-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
JP2019116634A (ja) * 2013-12-06 2019-07-18 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面上の残渣を除去するための洗浄用製剤
US10415005B2 (en) 2013-12-06 2019-09-17 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10696933B2 (en) 2013-12-06 2020-06-30 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
EP3719105A1 (fr) * 2013-12-06 2020-10-07 Fujifilm Electronic Materials USA, Inc. Formulation de nettoyage destinée à éliminer des résidus sur des surfaces
WO2015084921A1 (fr) 2013-12-06 2015-06-11 Fujifilm Electronic Materials U.S.A., Inc. Formulation nettoyante pour éliminer des résidus sur des surfaces
US11286444B2 (en) 2013-12-06 2022-03-29 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
KR20160096095A (ko) * 2013-12-06 2016-08-12 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
EP3077129A4 (fr) * 2013-12-06 2017-10-04 FujiFilm Electronic Materials USA, Inc. Formulation nettoyante pour éliminer des résidus sur des surfaces
EP2930565A1 (fr) * 2014-04-09 2015-10-14 Tokyo Ohka Kogyo Co., Ltd. Solution de décapage pour photolithographie et procédé de formation de motif
US11407966B2 (en) 2018-03-28 2022-08-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
CN112859552B (zh) * 2021-02-04 2024-01-05 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液的应用
CN112859552A (zh) * 2021-02-04 2021-05-28 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液、其制备方法及应用
CN112859553A (zh) * 2021-02-04 2021-05-28 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液、其制备方法及应用
CN112859554B (zh) * 2021-02-04 2023-11-10 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液的制备方法
CN112859553B (zh) * 2021-02-04 2023-11-10 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液
CN112859554A (zh) * 2021-02-04 2021-05-28 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液、其制备方法及应用
CN116218612A (zh) * 2021-12-06 2023-06-06 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液在清洗半导体器件中的应用
CN116218610A (zh) * 2021-12-06 2023-06-06 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液的制备方法
CN116218611A (zh) * 2021-12-06 2023-06-06 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液

Also Published As

Publication number Publication date
CN101597548A (zh) 2009-12-09
CN102047184A (zh) 2011-05-04
CN102047184B (zh) 2013-10-23

Similar Documents

Publication Publication Date Title
WO2009146606A1 (fr) Solution de nettoyage pour éliminer des résidus de gravure plasma
TWI598430B (zh) 蝕刻組合物及其使用方法
US7718590B2 (en) Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
US7825079B2 (en) Cleaning composition comprising a chelant and quaternary ammonium hydroxide mixture
US9068153B2 (en) Cleaning composition, cleaning process, and process for producing semiconductor device
US8513140B2 (en) Post-dry etching cleaning liquid composition and process for fabricating semiconductor device
JP4456424B2 (ja) フォトレジスト残渣及びポリマー残渣除去組成物
TW201416436A (zh) 清潔配方
JP2007519942A (ja) レジスト、ｂａｒｃ、およびギャップフィル材料を剥離する化学物質ならびに方法
WO2004094581A1 (fr) Compositions de fluorure aqueuses pour le nettoyage de dispositifs a semi-conducteurs
JP2006526895A (ja) 半導体処理におけるエッチング後の残留物の除去
JP2002113431A (ja) 洗浄方法
WO2009052706A1 (fr) Solution de rinçage pour supprimer des résidus de gravure au plasma
WO2012031453A1 (fr) Liquide de nettoyage contenant un fluorure
TWI734149B (zh) 後蝕刻殘留物的清潔組合物及其使用方法
US7682458B2 (en) Aqueous based residue removers comprising fluoride
WO2011006349A1 (fr) Solution de nettoyage pour résidus de décapage au plasma
TWI500760B (zh) 以酸，有機溶劑為主之多用途微電子清潔組合物
WO2009052707A1 (fr) Composition de nettoyage de résidus de gravure au plasma
TWI258501B (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
TW201835322A (zh) 一種含氟清洗液
CN101750913A (zh) 一种去除光阻层残留物的清洗液
WO2012171324A1 (fr) Solution pour l'élimination de résidu de gravure par plasma
TWI537378B (zh) 電漿蝕刻殘留物清洗液
CN102968001A (zh) 一种碱性的清洗液

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980121263.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09757040

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09757040

Country of ref document: EP

Kind code of ref document: A1