WO2009145161A1 - 磁気メモリセル及び磁気ランダムアクセスメモリ - Google Patents
磁気メモリセル及び磁気ランダムアクセスメモリ Download PDFInfo
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- WO2009145161A1 WO2009145161A1 PCT/JP2009/059560 JP2009059560W WO2009145161A1 WO 2009145161 A1 WO2009145161 A1 WO 2009145161A1 JP 2009059560 W JP2009059560 W JP 2009059560W WO 2009145161 A1 WO2009145161 A1 WO 2009145161A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Definitions
- the present invention relates to a magnetic memory cell and a magnetic random access memory to which spin torque magnetization reversal is applied.
- MRAM magnetic random access memory
- DRAM dynamic random access memory
- magnetization reversal is possible only by passing a current over a certain amount through a giant magnetoresistive (GMR) film or tunnel magnetoresistive (TMR) film used in a magnetic read head.
- GMR giant magnetoresistive
- TMR tunnel magnetoresistive
- spin torque magnetization reversal has been demonstrated using nanopillars using TMR films. It was done.
- spin torque magnetization reversal using a TMR film has attracted much attention because an output equivalent to or higher than that of a conventional MRAM can be obtained.
- a bit line 1 includes a first ferromagnetic layer (recording layer) 2 whose magnetization direction changes, an intermediate layer 3, and a second ferromagnetic layer (fixed layer) 4 whose magnetization direction is fixed.
- the resistance effect element and the transistor 6 whose conduction is controlled by the gate electrode 5 are connected, and the other terminal of the transistor is connected to the source line 7.
- FIG. 1A when the magnetization of the fixed layer 4 and the recording layer 2 is changed from the antiparallel (high resistance) state to the parallel (low resistance) state, the current 8 is changed from the bit line 1 to the source line 7. Shed.
- the electrons 9 flow from the source line 7 to the bit line 1.
- the magnetizations of the fixed layer 4 and the free layer 2 are changed from the parallel (low resistance) state to the antiparallel (high resistance) state as shown in FIG. What is necessary is just to flow in the direction of line 1. At this time, the electrons 9 flow from the bit line 1 to the source line 7.
- Applied Physics Letters, Vol. 84, pp. 3897-3899 (2004) proposes a method of performing spin torque magnetization reversal using magnetization perpendicular to the magnetic film surface without changing the current direction.
- a magnetoresistive element formed by laminating a second intermediate layer 24 and a reference layer 25 having a magnetization direction in the film plane is used.
- a positive current 26 is supplied to apply spin torque to the magnetization of the recording layer.
- the time for passing a positive current is 1 ⁇ 4 of the period T of the magnetization precession due to the spin torque.
- the direction of the current is switched to the opposite direction 27, and a torque for stopping the movement of magnetization is given to show that spin torque magnetization reversal is possible in a time of only T / 2.
- the TMR type MRAM using the conventional spin torque magnetization reversal has the following problems.
- An object of the present invention is to provide a magnetic memory cell and a magnetic random accelerator memory to which spin torque magnetization reversal is applied, which can be manufactured practically and does not require switching of the current direction during information rewriting.
- a memory cell is formed in which a fixed layer made of a ferromagnetic material, a nonmagnetic layer, a recording layer made of a ferromagnetic material, a nonmagnetic layer, and a magnetization rotation assist layer made of a ferromagnetic material are sequentially laminated.
- the magnetization directions of the fixed layer, the recording layer, and the magnetization rotation assist layer are all substantially in-plane directions of the magnetic layer, and the magnetization direction of the magnetization rotation assist layer is approximately 90 degrees with respect to the magnetization direction of the fixed layer.
- the magnetization of the fixed layer is fixed by an exchange coupling force from an antiferromagnetic layer provided in contact with the fixed layer on the surface opposite to the recording layer.
- the magnetization of the magnetization rotation assist layer is fixed by an exchange coupling force from an antiferromagnetic layer provided in contact with the magnetization rotation assist layer on the surface opposite to the recording layer.
- a diode element capable of passing a current from the fixed layer to the recording layer is connected to the magnetic memory cell.
- a transistor for supplying current to the magnetic memory cell is connected.
- one end of the diode is electrically connected to the source line connected to the first write driver circuit, and the magnetization rotation assist layer is connected to the second write driver circuit and the read signal.
- one end of the transistor is electrically connected to the source line connected to the first write driver circuit, and one end of the magnetization rotation assist layer is connected to the second write driver circuit.
- a word line is connected to a bit line connected to an amplifier for amplifying a read signal, and the resistance of the transistor is controlled.
- the word line is connected to a third write driver circuit.
- the magnetization direction of the recording layer may be rewritten from a direction parallel to the magnetization direction of the fixed layer to an antiparallel direction, or from the antiparallel direction to the parallel direction. Current to the recording layer.
- the magnetization direction of the recording layer is rewritten from a direction parallel to the magnetization direction of the fixed layer to an antiparallel direction, or when rewritten from an antiparallel direction to a parallel direction,
- the read current is passed in the direction from the recording layer to the fixed layer.
- the current waveform for writing information to the magnetic memory cell is controlled in the following manner with respect to the time t from the start of applying the current pulse.
- I 0 is a predetermined write current
- T is a period of precession of magnetization of the recording layer.
- I I 0 (0 ⁇ t ⁇ T / 4) 0 (T / 4 ⁇ t ⁇ 3T / 4) I 0 (3T / 4 ⁇ t ⁇ 5T / 4) : 0 (T / 4 + (n ⁇ 1) T ⁇ t ⁇ 3T / 4 + (n ⁇ 1) T) I 0 (3T / 4 + (n ⁇ 1) T ⁇ t ⁇ 5T / 4 + (n ⁇ 1) T)
- the number of rotations of magnetization until the end of magnetization reversal is plotted as a function of the sine (sin ⁇ ) of the angle ⁇ between the magnetization of the recording layer at time zero and the easy axis, and the current value.
- FIG. 4 shows a main configuration example of a magnetic memory cell using the present invention.
- the magnetoresistive effect element of the present invention includes a base film 41, an antiferromagnetic film 42, a fixed layer 43, an insulating barrier layer 44, a recording layer 45, a nonmagnetic intermediate layer 46, a magnetization reversal assist layer 47, and an antiferromagnetic layer 48.
- a suitable cap layer 49 is sequentially laminated.
- the magnetization direction of the fixed layer 43 is fixed in a predetermined direction in the film surface by the exchange coupling force from the antiferromagnetic film 42.
- the magnetization of the recording layer 45 is parallel to the film surface and substantially parallel or antiparallel to the magnetization direction of the fixed layer 43.
- the nonmagnetic intermediate layer 46 an insulating layer is usually used as the nonmagnetic intermediate layer 46.
- the magnetization reversal assist layer 47 has a magnetization direction parallel to the film surface and substantially perpendicular to the magnetization direction of the fixed layer 43, and the magnetization direction is fixed by the antiferromagnetic layer 48.
- the diode 50 is used as a switch for turning on and off the current 8 (electrons flow in the direction 9) flowing from the source line 7 to the bit line 1.
- FIG. 5 shows a case where the magnetization direction of the recording layer 45 is changed from parallel (low resistance state) to antiparallel (high resistance state) to the magnetization direction of the fixed layer 43 in the magnetoresistive element shown in FIG. It is the figure which showed an example of the time change of an electric current value, and the change of the magnetization direction of a recording layer accompanying it.
- the current is increased to a predetermined magnitude at time zero, and thereafter, the current value is maintained until the time of 1 ⁇ 4 of the period T of the magnetization precession of the recording layer 45, and then reduced to zero.
- the spin torque applied from the current to the magnetization of the recording layer excites the precession of the magnetization of the recording layer as shown in FIG.
- This precession continues as shown in FIGS. 5C and 5D during times T / 4 to 3T / 4 when the current is off.
- the current is increased to a predetermined value again at time 3T / 4, and is kept constant until time 5T / 4.
- the spin torque acts on the magnetization of the recording layer again from this current, and the precession of the magnetization of the recording layer is amplified as shown in FIGS. 5 (e) and 5 (f).
- the magnetization switches in the direction opposite to the initial state, and the precession stops.
- FIG. 6 shows the magnetoresistive effect element shown in FIG. 4 in which the magnetization direction of the recording layer 45 is changed from antiparallel (high resistance state) to parallel (low resistance state) with respect to the magnetization direction of the fixed layer 43. It is the figure which showed an example of the time change of the electric current value in that case, and the change of the magnetization direction of the recording layer accompanying it. Also in this case, as in the case of FIG. 5, the current is first increased to a predetermined magnitude at time zero, and then the current value is increased to a time that is 1/4 of the period T of the magnetization precession of the recording layer. Keep and then reduce to zero. The spin torque applied from the current to the magnetization of the recording layer excites the precession of the magnetization of the recording layer as shown in FIG.
- the precession continues as shown in FIGS. 6C and 6D during the time T / 4 to 3T / 4 when the current is turned off.
- the current is increased to a predetermined value again at time 3T / 4, and is kept constant until time 5T / 4.
- the spin torque acts on the magnetization of the recording layer again from this current, and the precession of the magnetization of the recording layer is amplified as shown in FIGS. 6 (e) and 6 (f).
- the magnetization switches in the direction opposite to the initial state, and the precession stops.
- the rotation direction of the magnetization of the recording layer in the precession is opposite. That is, when the direction of current is directed in the direction of arrow 8 in FIG. 4, that is, the direction of electrons is directed in the direction of arrow 9 in FIG.
- the spin torque that acts on the magnetization of the recording layer 45 acts in a direction that attempts to align the magnetization direction of the recording layer 45 with the magnetization direction of the magnetization rotation assist layer 47. Therefore, precession as shown in FIGS. 5B and 6B is excited. However, if the current is maintained without being cut off after time T / 4, the spin torque causes the magnetization of the recording layer 45 between time T / 4 and time 3T / 4 in both FIG. 5 and FIG.
- magnetization reversal by spin torque is (1) It is shown that in a region where the pulse width is 10 ns or less, the write current increases rapidly as the pulse width decreases. (2) Magnetization reversal occurs stochastically and distribution occurs in switching time.
- the above (1) is not preferable from the viewpoint of increasing power consumption, and (2) is not preferable from the viewpoint of inhibiting stable writing operation of the memory.
- the current I required for writing is expressed by the following equation.
- I I c0 + I c0 ln ( ⁇ / 2 ⁇ ) ( ⁇ H eff ) ⁇ 1 / ⁇ p (1) I c0 ⁇ sin ⁇ [p / 2 / (1 + p 2 cos ⁇ )]-1 (2)
- ⁇ the damping constant of the recording layer magnetization film
- ⁇ the magnetorotation ratio
- H eff the effective magnetic field applied to the recording layer 45
- ⁇ p the current pulse width
- p is the spin of the magnetic film of the recording layer and the magnetization rotation assist layer.
- the polarizability, ⁇ is the angle formed by the magnetization of the recording layer and the magnetization rotation assist layer before the pulse current is applied.
- I c0 represented by Expression (2) is an intrinsic threshold current value determined by the material and shape of the magnetic film of the recording layer and the magnetization rotation assist layer, that is, a threshold current value when a direct current is used.
- ⁇ is approximately 90 degrees
- the intrinsic threshold current value I c0 in elements of the same material and structure can be minimized from the equation (2).
- the second term of the formula (1) becomes small because ⁇ is approximately 90 degrees, there is an effect that the problem of the above (1) is greatly relieved.
- the magnetization of the magnetization rotation assist layer 47 is oriented in a direction perpendicular to the magnetization of the recording layer 45. It is oriented substantially perpendicular to the magnetization direction of 45.
- the energetically stable direction of the magnetization direction of the recording layer 45 shown in FIG. 4 is called an easy axis.
- the direction perpendicular to this direction is called a hard magnetization axis.
- FIG. 8 shows that the leakage magnetic field H from the magnetization rotation assist layer is 1 / of the magnetic field Hk necessary for directing the magnetization of the recording layer from the easy axis direction to the hard axis direction (this is called an anisotropic magnetic field). 4, the number of rotations of magnetization until the magnetization reversal is finished is plotted as a function of the sine (sin ⁇ ) of the angle ⁇ between the magnetization of the recording layer at the time zero and the easy axis and the value of the current. Is.
- the magnetization reversal is completed after 5/4 rotation.
- the rotational speed of the precession required for the magnetization reversal can be uniquely determined by the leakage magnetic field H from the magnetization rotation assist layer and the applied current value, and the pulse waveform can be determined accordingly. it can. That is, in general, when the rotation speed of the precession of magnetization of the recording layer until the magnetization reversal is 1 ⁇ 4 + n (n is an integer of 1 or more), the current waveform is as follows with respect to time t: You can do it.
- I I 0 (0 ⁇ t ⁇ T / 4) 0 (T / 4 ⁇ t ⁇ 3T / 4) I 0 (3T / 4 ⁇ t ⁇ 5T / 4) : (3) 0 (T / 4 + (n ⁇ 1) T ⁇ t ⁇ 3T / 4 + (n ⁇ 1) T) I 0 (3T / 4 + (n ⁇ 1) T ⁇ t ⁇ 5T / 4 + (n ⁇ 1) T)
- I 0 is a value of an energization current that does not cross a plurality of regions determined from FIG. 8, and T is a time required for one rotation of precession.
- Equation (3) the current is described to be turned ON / OFF in a pulse shape, but since there is a rounded waveform due to the capacity of the circuit, the actual waveform is not necessarily in the pulse shape as shown in FIGS. Must not.
- n is almost zero to 1, and the required current I 0 can be reduced to almost I c0 . That is, according to the present invention, the process of spin torque magnetization reversal can be controlled with extremely high accuracy by setting an appropriate current pulse waveform for a given magnetoresistive element structure and material.
- FIG. 9 shows the rotational speed of magnetization until the magnetization reversal is completed in the case of the spin torque magnetization reversal of FIG. 1 (conventional example), the sine of the angle ⁇ formed by the magnetization of the recording layer at the time zero with the easy magnetization axis ( sin ⁇ ) and a plot of the current value as a function.
- the write current is 3I c0
- the angle that the magnetization of the recording layer makes with the easy axis due to thermal disturbance varies to the extent indicated by the range B in FIG.
- the reversal probability of the spin torque magnetization reversal is completely controlled, and the problem of the reversal probability variation is fundamentally overcome, in addition to the general effect of reducing the variation of the switching probability due to the application of the hard axis magnetic field described above. It can be seen that there is an effect to solve the problem.
- First film configuration example In FIG. 4, Ta as the underlayer film 41, MnIr as the antiferromagnetic film 42, CoFeB as the fixed layer 43, MgO as the insulating barrier layer 44, CoFeB as the recording layer 45, nonmagnetic intermediate layer 46 MgO, CoFeB as the magnetization reversal assist layer 47, PtMn as the antiferromagnetic layer 48, and Ta as the cap layer 49.
- This configuration is a basic configuration and can achieve all the effects described above.
- Second film configuration example In FIG. 4, Ta is used as the base film 41, MnIr is used as the antiferromagnetic film 42, and CoFe / Ru / CoFeB is used as the fixed layer 43.
- Exchange coupling structure MgO as the insulating barrier layer 44, CoFeB as the recording layer 45, MgO as the nonmagnetic intermediate layer 46, CoFeB as the magnetization reversal assist layer 47, PtMn as the antiferromagnetic layer 48, and as the cap layer 49 Ta is used.
- the magnetizations of the fixed layer are antiparallel coupled to each other and are directed in opposite directions, the leakage magnetic flux from the fixed layer 43 is not applied to the recording layer 45. Therefore, the magnetic field that determines the performance of the recording layer 45 -The resistance hysteresis offset to the magnetic field (the center of hysteresis deviates from the zero magnetic field) can be reduced.
- Ta is used as the base film 41
- MnIr is used as the antiferromagnetic film 42
- a CoFe / Ru / CoFeB laminated ferrimagnetic structure is used as the fixed layer 43
- MgO is used as the insulating barrier layer 44
- the recording layer 45 is used.
- a CoFeB / Ru / CoFeB laminated ferrimagnetic structure, MgO as the nonmagnetic intermediate layer 46, CoFeB as the magnetization reversal assist layer 47, PtMn as the antiferromagnetic layer 48, and Ta as the cap layer 49 are used.
- the magnetizations of the fixed layer 43 are coupled in antiparallel to each other and are directed in opposite directions, the leakage magnetic flux from the fixed layer 43 is not applied to the recording layer 45 and the recording layer itself leaks. Since the magnetic field is also closed in the two magnetized films constituting the recording layer, the offset of the magnetic field-resistance hysteresis of the recording layer with respect to the magnetic field can be made almost zero. Further, since the coercive force of the recording layer can be increased by increasing the volume of the entire recording layer and bringing the thicknesses of the two magnetic films constituting the recording layer closer, a thermally stable magnetic memory cell Can be provided.
- Ta is used as the base film 41
- MnIr is used as the antiferromagnetic film 42
- CoFe / Ru / CoFeB is a laminated ferri structure as the fixed layer 43
- MgO is used as the insulating barrier layer 44
- the recording layer 45 is used.
- a CoFeB / Ru / CoFe laminated ferrimagnetic structure, Cu as the nonmagnetic intermediate layer 46, CoFe as the magnetization reversal assist layer 47, PtMn as the antiferromagnetic layer 48, and Ta as the cap layer 49 are used.
- the resistance of the entire device can be reduced by using metallic Cu for the intermediate layer 46 as compared with the third film configuration.
- the basic effect of the present invention does not change.
- an antiferromagnetic material other than MnIr or PtMn is used as the antiferromagnetic films 42 and 48
- the basic effect of the present invention is not changed.
- a so-called Heusler alloy such as Co 2 MnSi is used for the material of the fixed layer 43, and the polarizability p is further increased. Increasing the value has the effect of further reducing I c0 .
- an oxide of Al, an oxide of Ti, or a nitride material such as TiN or AlN is used as the barrier layer material 44, the basic effect of the present invention does not change.
- FIG. 10 shows a configuration example of the magnetic random access memory according to the present invention.
- 1 is a source line
- 50 is a diode
- 91 is a magnetoresistive element of the present invention
- 7 is a bit line
- 92 is one magnetic memory cell.
- the source line 1 and the bit line 7 are driven by separate write driver circuits.
- a sense amplifier that amplifies a read signal from the magnetic memory cell is connected to the bit line 7.
- the diode 50 is connected to the magnetoresistive element 91 so that a current can be passed in the direction from the fixed layer to the recording layer.
- One end of the diode is electrically connected to the source line, and the magnetization rotation assist layer of the magnetoresistive effect element 91 is connected to the bit line.
- the source line write driver boosts only one source line 1 to the write voltage V, and the other source lines are dropped to the ground, and the bit line write driver drops only one bit line 7 to the ground. The others are maintained at the voltage V.
- FIG. 11 shows another configuration example of the magnetic random access memory according to the present invention.
- 1 is a source line
- 101 is a magnetoresistive element of the present invention
- 7 is a bit line
- 102 is a cell selection transistor
- 103 is a word line
- 104 is one magnetic memory cell.
- a sense amplifier that amplifies a read signal from the magnetic memory cell is connected to the bit line 7.
- one end of the transistor 102 is electrically connected to the source line 1
- the magnetization rotation assist layer of the magnetoresistive effect element 101 is connected to the bit line 7, and the transistor 102 is controlled by the word line 103.
- writing is performed by boosting only one source line 1 connected to a memory cell to be written by a write driver to the write voltage V, and setting only the word line connected to the cell selection transistor 102 of the memory cell to the other. Selection is performed by the writing driver, the transistor 102 is turned on, a current is supplied, and writing is performed.
- spin torque drive layer 41 ... base film, 42 ... antiferromagnetic film 43 ... Fixed layer, 44 ... Insulating barrier layer, 45 ... Recording layer, 46 ... Intermediate layer, 47 ... Magnetization rotation assist layer, 48 ... Antiferromagnetic layer, 49 ... Cap layer, 50 ... Diode, 71 ... Leakage magnetic flux, 91: magnetoresistive effect element, 92 ... memory cell, 101 ... memory cell, 102 ... transition Motor, 103 ... word lines, 104 ... memory cells
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Abstract
Description
0 (T/4<t≦3T/4)
I0(3T/4<t≦5T/4)
:
0(T/4+(n-1)T<t≦3T/4+(n-1)T)
I0(3T/4+(n-1)T<t≦5T/4+(n-1)T)
(1)パルス幅が10ns以下の領域で、パルス幅の減少とともに急速に書込み電流が増大する
(2)磁化反転が確率的に生じ、スイッチング時間に分布が生じる
ということが示されている。上記(1)は消費電力の増大という観点から、(2)はメモリの安定な書込み動作を阻害するという観点で好ましくない。パルス幅が10ns以下の領域では、書き込みに必要な電流Iは次式で表される。
Ic0∝ sinθ [p/2 / (1+p2cosθ)]-1 (2)
ここでαは記録層磁化膜のダンピング定数、γは磁気回転比、Heffは記録層45にかかる実効磁界、τpは電流パルス幅、pは記録層及び磁化回転アシスト層の磁性膜のスピン分極率、θはパルス電流が与えられる前の記録層と磁化回転アシスト層の磁化のなす角である。式(2)で表されるIc0は、記録層や磁化回転アシスト層の磁性膜の材料や形状で決まるイントリンシックなしきい電流値、すなわち直流電流を用いた場合のしきい電流値である。本実施例では、θが略90度であるので、式(2)より、同一の材料や構造の素子におけるイントリンシックなしきい電流値Ic0を最小にすることができる。さらに式(1)においても、θが略90度であることにより、式(1)の第2項が小さくなるので、上記(1)の問題点が大いに緩和されるという効果がある。
0 (T/4<t≦3T/4)
I0(3T/4<t≦5T/4)
: (3)
0(T/4+(n-1)T<t≦3T/4+(n-1)T)
I0(3T/4+(n-1)T<t≦5T/4+(n-1)T)
ただし、I0は図8から決められる複数の領域をまたがない通電電流の値、Tは歳差運動の1回転に要する時間である。式(3)では、電流はパルス状にON/OFFするように記述されているが、回路の容量による波形のなまりがあるので、実際の波形は図5、図6のように必ずしもパルス状にはならない。一般的に、nはゼロないし1の場合がほとんどであり、必要な電流I0もほぼIc0と小さくできる。すなわち本発明によれば、与えられた磁気抵抗効果素子の構造や材料に対して適切な電流のパルス波形を設定することで、極めて精度よくスピントルク磁化反転の過程を制御できる。
以下、具体的な磁気メモリセルの構造について説明する。
(2-1)ダイオードを用いた磁気ランダムアクセスメモリの構成例
図10に、本発明による磁気ランダムアクセスメモリの構成例を示す。図10において、1はソース線、50はダイオード、91は本発明の磁気抵抗効果素子あり、7はビット線、92は一つの磁気メモリセルを表す。ソース線1とビット線7は、別々の書き込みドライバ回路で駆動される。ビット線7には磁気メモリセルからの読み出し信号を増幅するセンスアンプが接続されている。図示の例では、ダイオード50は、磁気抵抗効果素子91に、固定層から記録層の方向に電流を通電可能に接続されている。また、ダイオードの一端はソース線に電気的に接続され、磁気抵抗効果素子91の磁化回転アシスト層がビット線に接続されている。
図11に、本発明による磁気ランダムアクセスメモリの他の構成例を示す。図11において、1はソース線、101は本発明の磁気抵抗効果素子であり、7はビット線、102はセル選択トランジスタ、103はワード線、104は一つの磁気メモリセルを表す。ビット線7には磁気メモリセルからの読み出し信号を増幅するセンスアンプが接続されている。図示の例では、トランジスタ102の一端がソース線1に電気的に接続され、磁気抵抗効果素子101の磁化回転アシスト層がビット線7に接続され、トランジスタ102はワード線103によって制御される。
Claims (13)
- 強磁性体からなる固定層、非磁性層、強磁性体からなる記録層、非磁性層、強磁性体からなる磁化回転アシスト層が順次積層された磁気抵抗効果素子を備え、
前記固定層、記録層、磁化回転アシスト層の磁化はすべて面内方向を向き、前記磁化回転アシスト層の磁化の方向は前記固定層の磁化の方向と略直交しており、
前記固定層の磁化方向に対する前記記録層の磁化方向が略平行か、略反平行かによって情報の記録を行うことを特徴とする磁気メモリセル。 - 請求項1記載の磁気メモリセルにおいて、前記固定層の前記記録層とは反対側の面に反強磁性層が接触して設けられていることを特徴とする磁気メモリセル。
- 請求項1記載の磁気メモリセルにおいて、前記磁化回転アシスト層の前記記録層とは反対側の面に反強磁性層が接触して設けられていることを特著とする磁気メモリセル。
- 請求項1記載の磁気メモリセルにおいて、前記磁気抵抗効果素子に、前記固定層から前記記録層の方向に電流を通電可能なダイオードが接続されていることを特徴とする磁気メモリセル。
- 請求項4記載の磁気メモリセルにおいて、前記記録層の磁化方向を前記固定層の磁化方向と平行な方向から反平行な方向に書き換える場合も、反平行な方向から平行な方向に書き換える場合も、前記固定層から記録層の方向に電流を流すことを特徴とする磁気メモリセル。
- 請求項5記載の磁気メモリセルにおいて、前記書き換えのための電流は、前記記録層の磁化の歳差運動の周期をTとするとき、書き換え開始からT/4まで通電し、その後ゼロに低減することを特徴とする磁気メモリセル。
- 請求項6記載の磁気メモリセルにおいて、その後、前記書き換えのための電流を3T/4から5T/4まで通電することを特徴とする磁気メモリセル。
- 請求項1記載の磁気メモリセルにおいて、前記磁気抵抗効果素子に電流を通電するためのトランジスタが接続されていることを特徴とする磁気メモリセル。
- 請求項8記載の磁気メモリセルにおいて、前記記録層の磁化方向を前記固定層の磁化方向と平行な方向から反平行な方向に書き換える場合も、反平行な方向から平行な方向に書き換える場合も、前記固定層から記録層の方向に電流を流し、前記磁気メモリの情報を読み出すときは、読出し電流を前記記録層から固定層の方向へ流すことを特徴とする磁気メモリセル。
- 請求項9記載の磁気メモリセルにおいて、前記書き換えのための電流は、前記記録層の磁化の歳差運動の周期をTとするとき、書き換え開始からT/4まで通電し、その後ゼロに低減することを特徴とする磁気メモリセル。
- 請求項10記載の磁気メモリセルにおいて、その後、前記書き換えのための電流を3T/4から5T/4まで通電することを特徴とする磁気メモリセル。
- 複数のソース線が接続された第一のドライバ回路と、
複数のビット線が接続された第二のドライバ回路と、
前記ソース線と前記ビット線の交差領域にそれぞれ配置された複数の磁気メモリセルと、
前記複数のビット線にそれぞれ接続され前記磁気メモリセルからの読み出し信号を増幅する複数のアンプとを有し、
前記磁気メモリセルは、強磁性体からなる固定層、非磁性層、強磁性体からなる記録層、非磁性層、強磁性体からなる磁化回転アシスト層が順次積層された磁気抵抗効果素子と、前記磁気抵抗効果素子に一端が接続されたダイオードとを備え、前記固定層、記録層、磁化回転アシスト層の磁化はすべて面内方向を向き、前記磁化回転アシスト層の磁化の方向は前記固定層の磁化の方向と略直交しており、前記固定層の磁化方向に対する前記記録層の磁化方向が略平行か、略反平行かによって情報の記録を行い、
前記ダイオードは、前記磁気抵抗効果素子に、前記固定層から前記記録層の方向に電流を通電可能に他端が前記ソース線に接続され、
前記磁気抵抗効果素子の前記磁化回転アシスト層は前記ビット線に接続されていることを特徴とする磁気ランダムアクセスメモリ。 - 複数のソース線が接続された第一のドライバ回路と、
複数のビット線が接続された第二のドライバ回路と、
複数のワード線が接続された第三のドライバ回路と、
前記ソース線と前記ビット線と前記ワード線の交差領域にそれぞれ配置された複数の磁気メモリセルと、
前記複数のビット線にそれぞれ接続され前記磁気メモリセルからの読み出し信号を増幅する複数のアンプとを有し、
前記磁気メモリセルは、強磁性体からなる固定層、非磁性層、強磁性体からなる記録層、非磁性層、強磁性体からなる磁化回転アシスト層が順次積層された磁気抵抗効果素子と、前記磁気抵抗効果素子に一端が接続されたトランジスタとを備え、前記固定層、記録層、磁化回転アシスト層の磁化はすべて面内方向を向き、前記磁化回転アシスト層の磁化の方向は前記固定層の磁化の方向と略直交しており、前記固定層の磁化方向に対する前記記録層の磁化方向が略平行か、略反平行かによって情報の記録を行い、
前記トランジスタの他端は前記ソース線に接続され、
前記磁化回転アシスト層は前記ビット線に接続され、
前記ワード線によって前記トランジスタの抵抗が制御され、
情報の書き込み時には、前記第一のドライバ回路によって書き込みを行う磁気メモリセルが接続されたソース線を書き込み電圧に昇圧すると共に、前記第三のドライバ回路で当該磁気メモリセルのトランジスタを通電制御し、
情報の読み出し時には、前記第二のドライバ回路によって読み出しを行う磁気メモリセルが接続されたビット線を読み出し電圧に昇圧すると共に、前記第三のドライバ回路で当該磁気メモリセルのトランジスタを通電制御することを特徴とする磁気ランダムアクセスメモリ。
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JP2012004222A (ja) * | 2010-06-15 | 2012-01-05 | Sony Corp | 記憶装置 |
US10325640B2 (en) | 2016-09-09 | 2019-06-18 | Toshiba Memory Corporation | Magnetoresistive memory device with different write pulse patterns |
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JP5542856B2 (ja) * | 2012-03-21 | 2014-07-09 | 株式会社東芝 | 磁気抵抗効果素子及び磁気メモリ |
US20140355336A1 (en) * | 2013-06-04 | 2014-12-04 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP2018152432A (ja) | 2017-03-10 | 2018-09-27 | 東芝メモリ株式会社 | 磁気記憶装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5734605A (en) | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
WO2005020251A2 (en) * | 2003-08-19 | 2005-03-03 | New York University | High speed low power magnetic devices based current induced spin-momentum transfer |
JP2006128579A (ja) | 2004-11-01 | 2006-05-18 | Sony Corp | 記憶素子及びメモリ |
JP2008028362A (ja) * | 2006-06-22 | 2008-02-07 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
JP2008041217A (ja) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | 磁気メモリ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103104A (ja) * | 2002-09-09 | 2004-04-02 | Renesas Technology Corp | 薄膜磁性体記憶装置 |
US20070297220A1 (en) * | 2006-06-22 | 2007-12-27 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory |
JP2008310868A (ja) * | 2007-06-13 | 2008-12-25 | Sony Corp | 半導体メモリデバイス、および、そのデータ読み出し方法 |
-
2009
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5734605A (en) | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
WO2005020251A2 (en) * | 2003-08-19 | 2005-03-03 | New York University | High speed low power magnetic devices based current induced spin-momentum transfer |
JP2006128579A (ja) | 2004-11-01 | 2006-05-18 | Sony Corp | 記憶素子及びメモリ |
JP2008028362A (ja) * | 2006-06-22 | 2008-02-07 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
JP2008041217A (ja) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | 磁気メモリ |
Non-Patent Citations (7)
Title |
---|
A.D.KENT ET AL.: "Spin- transfer-induced precessional magnetization reversal", APPLIED PHYSICS LETTERS, vol. 84, no. 19, 10 May 2004 (2004-05-10), pages 3897 - 3899, XP012061416 * |
APPLIED PHYSICS LETTERS, vol. 84, 2004, pages 3118 - 3120 |
APPLIED PHYSICS LETTERS, vol. 84, 2004, pages 3897 - 3899 |
APPLIED PHYSICS LETTERS, vol. 88, 2006, pages 152505 |
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 159, 1996, pages L1 - 6 |
PHYSICAL REVIEW B, vol. 75, 2007, pages 064402 |
PHYSICS LETTERS, vol. 84, 2004, pages 3118 - 3120 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004222A (ja) * | 2010-06-15 | 2012-01-05 | Sony Corp | 記憶装置 |
US10325640B2 (en) | 2016-09-09 | 2019-06-18 | Toshiba Memory Corporation | Magnetoresistive memory device with different write pulse patterns |
US10910032B2 (en) | 2016-09-09 | 2021-02-02 | Toshiba Memory Corporation | Magnetoresistive memory device with different write pulse patterns |
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US8508985B2 (en) | 2013-08-13 |
KR101231288B1 (ko) | 2013-02-07 |
EP2287902A1 (en) | 2011-02-23 |
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