WO2009141949A1 - 実装構造体の製造方法、および実装構造体 - Google Patents
実装構造体の製造方法、および実装構造体 Download PDFInfo
- Publication number
- WO2009141949A1 WO2009141949A1 PCT/JP2009/001264 JP2009001264W WO2009141949A1 WO 2009141949 A1 WO2009141949 A1 WO 2009141949A1 JP 2009001264 W JP2009001264 W JP 2009001264W WO 2009141949 A1 WO2009141949 A1 WO 2009141949A1
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- WIPO (PCT)
- Prior art keywords
- insulating resin
- mounting structure
- circuit board
- curing
- heating
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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Definitions
- the heated heating and pressing tool 107 is pressed from above the IC chip 101 to perform heating and pressing simultaneously, and the bumps 103 cause the electrodes 102 of the IC chip 101 and the circuit board 104 to be pressed.
- the electrodes 105 are joined together.
- the insulating resin 106 is cured by heating at this time, and the gap between the IC chip 101 and the circuit board 104 is sealed.
- the pressurizing step starts the pressurization after the insulating resin having a low curing temperature starts to be cured and before the insulating resin having a high curing temperature is cured. It is a manufacturing method of the mounting structure of the 2nd invention.
- the twelfth invention related to the present invention is: The mounting structure according to any one of the first to eleventh inventions related to the present invention, wherein a difference in curing temperature between the insulating resin having a low curing temperature and the insulating resin having a high curing temperature is 30 ° C. or more. It is a manufacturing method.
- the pressure for compressing the insulating resin 17 can be further reduced. It becomes difficult to inhibit the curing shrinkage of 16, and is more preferable.
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- Condensed Matter Physics & Semiconductors (AREA)
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- Wire Bonding (AREA)
Abstract
Description
第1の硬化温度で硬化する第1絶縁性樹脂および前記第1の硬化温度よりも高い第2の硬化温度で硬化する第2絶縁性樹脂の2種類の絶縁性樹脂を、回路基板上に形成する絶縁性樹脂配置ステップと、
電子部品または前記回路基板に形成されたバンプが、前記回路基板または前記電子部品の対向電極に相対するように、前記2種類の絶縁性樹脂の上から前記電子部品を位置合わせする、少なくとも前記バンプと前記対向電極とが接触する程度の事前加圧を含む実装ステップと、
前記実装ステップの後、本格加圧を行って前記電子部品と前記回路基板とを接合する本格加圧ステップとを備えた実装構造体の製造方法であって、
前記本格加圧前または前記本格加圧中に、前記第1絶縁性樹脂が前記第1の硬化温度に達するように加熱する第1絶縁性樹脂硬化ステップと、
前記第1絶縁性樹脂の硬化後、前記本格加圧中または前記本格加圧後に、前記第2絶縁性樹脂が前記第2の硬化温度に達するように加熱する第2絶縁性樹脂硬化ステップと、を少なくとも備えた、実装構造体の製造方法である。
前記第1絶縁性樹脂硬化ステップの前記本格加圧前の加熱とは、前記実装ステップの前記事前加圧中の加熱、または、前記実装ステップ後、前記本格加圧ステップ前の加熱である、第1の本発明の実装構造体の製造方法である。
前記実装ステップの前記事前加圧中の加熱による温度上昇、または、前記実装ステップ後、前記本格加圧ステップ前の加熱による温度上昇と、前記第2絶縁性樹脂硬化ステップにおける加熱による温度上昇とは、連続的である、第2の本発明の実装構造体の製造方法である。
前記実装ステップの前記事前加圧中の加熱による温度上昇、または、前記実装ステップ後、前記本格加圧ステップ前の加熱による温度上昇と、前記第2絶縁性樹脂硬化ステップにおける加熱による温度上昇とは、不連続的である、第2の本発明の実装構造体の製造方法である。
前記第1の硬化温度を経由して前記第2の硬化温度に達するまでの温度上昇は、連続的である、第1の本発明の実装構造体の製造方法である。
前記第1の硬化温度に達するまで加熱した後、所定期間後に、前記第2の硬化温度に達するまで加熱する、第1の本発明の実装構造体の製造方法である。
前記実装ステップ中に、前記第1の硬化温度よりも低い温度による事前加熱を行う、第1の本発明の実装構造体の製造方法である。
前記本格加圧による圧力は、前記バンプの数が多い実装構造体の場合の方が、前記バンプの数がより少ない実装構造体の場合よりも小さい、第1~第7のいずれかの本発明の実装構造体の製造方法である。
前記絶縁性樹脂配置ステップでは、前記回路基板の前記バンプまたは前記対向電極が前記第2の絶縁性樹脂の領域に配置されるように前記2種類の絶縁性樹脂を配置する、第1~第8のいずれかの本発明の実装構造体の製造方法である。
前記2種類の絶縁性樹脂は、前記第1の絶縁性樹脂の領域と前記第2の絶縁性樹脂の領域が縞状に配置されるように形成されている、第9の本発明の実装構造体の製造方法である。
前記2種類の絶縁性樹脂は、前記第2の絶縁性樹脂が前記第1の絶縁性樹脂の周りを取り囲むように配置されている、第1~第8のいずれかの本発明の実装構造体の製造方法である。
前記第1の絶縁性樹脂と前記第2の絶縁性樹脂との硬化温度の差は、30℃以上である、第1~第11のいずれかの本発明の実装構造体の製造方法である。
電子部品と、回路基板と、前記電子部品および前記回路部品の間に挟まれ封止する絶縁性樹脂とを備えた実装構造体であって、
前記電子部品または前記回路基板にはバンプが形成されており、前記バンプは、相対する、前記回路基板または前記電子部品の対向電極に接続されており、
前記絶縁性樹脂は、硬化温度が異なる2種類の絶縁性樹脂が複数の領域に配置されており、前記2種類の絶縁性樹脂のうち硬化温度の高い方の絶縁性樹脂の領域に前記バンプが配置されている実装構造体である。
電子部品と回路基板とを接合した実装構造体の製造方法であって、
前記電子部品と前記回路基板との間に、硬化温度が異なる2種類の絶縁性樹脂を挟んで、前記電子部品または前記回路基板に形成されたバンプが、前記回路基板または前記電子部品の対向電極に相対するように位置合わせする実装ステップと、
前記実装ステップ中または前記実装ステップ後に、段階的または連続的に温度を上昇させることによって、硬化温度の低い絶縁性樹脂を先に硬化させ、硬化温度の高い絶縁性樹脂を後に硬化させる加熱ステップと、
前記加熱ステップの最初からまたは途中から、前記電子部品と前記回路基板とを加圧する加圧ステップとを備えた、実装構造体の製造方法である。
前記実装ステップでは、前記バンプが前記硬化温度の高い絶縁性樹脂の領域に配置されるように前記2種類の絶縁性樹脂を配置する、本発明に関連する第1の発明の実装構造体の製造方法である。
前記加圧ステップは、前記硬化温度の低い絶縁性樹脂が硬化し始めた以降で、かつ前記硬化温度の高い絶縁性樹脂が硬化する前に加圧を開始する、本発明に関連する第1または第2の発明の実装構造体の製造方法である。
前記加熱ステップは、前記実装ステップ中に、前記硬化温度の低い絶縁性樹脂の硬化温度よりも高く、かつ前記硬化温度の高い絶縁性樹脂の硬化温度よりも低い温度によって加熱して、前記硬化温度の低い絶縁性樹脂を硬化させ、
その後、前記加圧ステップは、加圧を開始するとともに、前記加熱ステップは、前記硬化温度の高い絶縁性樹脂の硬化温度よりも高い温度によってさらに加熱して、前記硬化温度の高い絶縁性樹脂を硬化させる、本発明に関連する第3の発明の実装構造体の製造方法である。
前記加熱ステップは、前記実装ステップ後に、前記硬化温度の高い絶縁性樹脂の硬化温度よりも高い温度によって加熱し、
前記加圧ステップは、前記硬化温度の低い絶縁性樹脂が硬化し始めた以降で、かつ前記硬化温度の高い絶縁性樹脂が硬化していないときに、加圧を開始する、本発明に関連する第3の発明の実装構造体の製造方法である。
前記加熱ステップは、前記実装ステップ後に、前記硬化温度の高い絶縁性樹脂の硬化温度よりも高い温度によって加熱し、
前記加圧ステップは、前記加熱ステップの最初から加圧を開始する、本発明に関連する第1または第2の発明の実装構造体の製造方法である。
前記実装ステップ中に、前記硬化温度の低い絶縁性樹脂の硬化温度よりも低い温度による事前加熱を行ってもよい、本発明に関連する第5または第6の発明の実装構造体の製造方法である。
前記実装ステップ中に、少なくとも前記バンプと前記対向電極とが接触する程度の事前加圧を行ってもよい、本発明に関連する第1~第7のいずれかの発明の実装構造体の製造方法である。
前記加圧ステップにおいて加圧する圧力は、前記バンプの数が多い実装構造体の場合の方が、前記バンプの数がより少ない実装構造体の場合よりも小さい、本発明に関連する第1または第2の発明の実装構造体の製造方法である。
前記2種類の絶縁性樹脂は、前記硬化温度の低い絶縁性樹脂の領域と前記硬化温度の高い絶縁性樹脂の領域が縞状に配置されるように形成されている、本発明に関連する第2の発明の実装構造体の製造方法である。
前記2種類の絶縁性樹脂は、前記硬化温度の高い絶縁性樹脂の内部に、前記硬化温度の低い絶縁性樹脂が内包されている、本発明に関連する第1または第2の発明の実装構造体の製造方法である。
前記硬化温度の低い絶縁性樹脂と前記硬化温度の高い絶縁性樹脂との硬化温度の差は、30℃以上である、本発明に関連する第1~第11のいずれかの発明の実装構造体の製造方法である。
11、21 ICチップ(電子部品)
12、22 ICチップの電極部
13、23 バンプ
14、24 回路基板
15、25 回路基板の電極部
16、26、36 絶縁性樹脂(硬化温度高い)
17、27、37 絶縁性樹脂(硬化温度低い)
18 加熱加圧ツール
19、29、39 絶縁性樹脂シート
以下、本発明の実施の形態1にかかる実装構造体の製造方法およびその製造方法により製造された実装構造体の構成について、図1および図2を参照しながら説明する。
次に、本発明の実施の形態2にかかる実装構造体の製造方法およびその製造方法により製造された実装構造体の構成について説明する。
次に、本発明の実施の形態3にかかる実装構造体の製造方法およびその製造方法により製造された実装構造体の構成について説明する。
絶縁性樹脂として、硬化反応ピーク温度170℃の絶縁性樹脂を用いて、試料を作成した。図8(c)に示した従来の絶縁性樹脂106の一例である。
絶縁性樹脂として、厚み50μmで、硬化反応ピーク温度120℃の絶縁性樹脂および硬化反応ピーク温度170℃の絶縁性樹脂を、それぞれ幅0.5mm、長さ11mmのものを用意し、図2のように縞状に配置した絶縁性樹脂シートを用いて、試料を作成した。
絶縁性樹脂として、11mm□サイズで厚み50μmの硬化反応ピーク温度170℃の絶縁性樹脂にφ1mmの穴を36個(6個×6列)開け、それらの穴に液状の硬化反応ピーク温度120℃の絶縁性樹脂を充填して、図4(b)のような絶縁性樹脂シートを作成し、この絶縁性樹脂シートを用いて、試料を作成した。
絶縁性樹脂として、11mm□サイズで厚み25μmの硬化反応ピーク温度170℃の絶縁性樹脂の上に、液状の硬化反応ピーク温度120℃の絶縁性樹脂を約1mm3量塗布し、その上から11mm□サイズで厚み25μmの硬化反応ピーク温度170℃の絶縁性樹脂を重ね合わせて、図5(b)のような絶縁性樹脂シートを作成し、この絶縁性樹脂シートを用いて、試料を作成した。
Claims (13)
- 第1の硬化温度で硬化する第1絶縁性樹脂および前記第1の硬化温度よりも高い第2の硬化温度で硬化する第2絶縁性樹脂の2種類の絶縁性樹脂を、回路基板上に形成する絶縁性樹脂配置ステップと、
電子部品または前記回路基板に形成されたバンプが、前記回路基板または前記電子部品の対向電極に相対するように、前記2種類の絶縁性樹脂の上から前記電子部品を位置合わせする、少なくとも前記バンプと前記対向電極とが接触する程度の事前加圧を含む実装ステップと、
前記実装ステップの後、本格加圧を行って前記電子部品と前記回路基板とを接合する本格加圧ステップとを備えた実装構造体の製造方法であって、
前記本格加圧前または前記本格加圧中に、前記第1絶縁性樹脂が前記第1の硬化温度に達するように加熱する第1絶縁性樹脂硬化ステップと、
前記第1絶縁性樹脂の硬化後、前記本格加圧中または前記本格加圧後に、前記第2絶縁性樹脂が前記第2の硬化温度に達するように加熱する第2絶縁性樹脂硬化ステップと、を少なくとも備えた、実装構造体の製造方法。 - 前記第1絶縁性樹脂硬化ステップの前記本格加圧前の加熱とは、前記実装ステップの前記事前加圧中の加熱、または、前記実装ステップ後、前記本格加圧ステップ前の加熱である、請求の範囲第1項記載の実装構造体の製造方法。
- 前記実装ステップの前記事前加圧中の加熱による温度上昇、または、前記実装ステップ後、前記本格加圧ステップ前の加熱による温度上昇と、前記第2絶縁性樹脂硬化ステップにおける加熱による温度上昇とは、連続的である、請求の範囲第2項記載の実装構造体の製造方法。
- 前記実装ステップの前記事前加圧中の加熱による温度上昇、または、前記実装ステップ後、前記本格加圧ステップ前の加熱による温度上昇と、前記第2絶縁性樹脂硬化ステップにおける加熱による温度上昇とは、不連続的である、請求の範囲第2項記載の実装構造体の製造方法。
- 前記第1の硬化温度を経由して前記第2の硬化温度に達するまでの温度上昇は、連続的である、請求の範囲第1項記載の実装構造体の製造方法。
- 前記第1の硬化温度に達するまで加熱した後、所定期間後に、前記第2の硬化温度に達するまで加熱する、請求の範囲第1項記載の実装構造体の製造方法。
- 前記実装ステップ中に、前記第1の硬化温度よりも低い温度による事前加熱を行う、請求の範囲第1項記載の実装構造体の製造方法。
- 前記本格加圧による圧力は、前記バンプの数が多い実装構造体の場合の方が、前記バンプの数がより少ない実装構造体の場合よりも小さい、請求の範囲第1項~第7項のいずれかに記載の実装構造体の製造方法。
- 前記絶縁性樹脂配置ステップでは、前記回路基板の前記バンプまたは前記対向電極が前記第2の絶縁性樹脂の領域に配置されるように前記2種類の絶縁性樹脂を配置する、請求の範囲第1項~第8項のいずれかに記載の実装構造体の製造方法。
- 前記2種類の絶縁性樹脂は、前記第1の絶縁性樹脂の領域と前記第2の絶縁性樹脂の領域が縞状に配置されるように形成されている、請求の範囲第9項記載の実装構造体の製造方法。
- 前記2種類の絶縁性樹脂は、前記第2の絶縁性樹脂が前記第1の絶縁性樹脂の周りを取り囲むように配置されている、請求の範囲第1項~第8項のいずれかに記載の実装構造体の製造方法。
- 前記第1の絶縁性樹脂と前記第2の絶縁性樹脂との硬化温度の差は、30℃以上である、請求の範囲第1項~第11項のいずれかに記載の実装構造体の製造方法。
- 電子部品と、回路基板と、前記電子部品および前記回路部品の間に挟まれ封止する絶縁性樹脂とを備えた実装構造体であって、
前記電子部品または前記回路基板にはバンプが形成されており、前記バンプは、相対する、前記回路基板または前記電子部品の対向電極に接続されており、
前記絶縁性樹脂は、硬化温度が異なる2種類の絶縁性樹脂が複数の領域に配置されており、前記2種類の絶縁性樹脂のうち硬化温度の高い方の絶縁性樹脂の領域に前記バンプが配置されている実装構造体。
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