WO2009139603A2 - 반도체 발광소자 - Google Patents
반도체 발광소자 Download PDFInfo
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- WO2009139603A2 WO2009139603A2 PCT/KR2009/002596 KR2009002596W WO2009139603A2 WO 2009139603 A2 WO2009139603 A2 WO 2009139603A2 KR 2009002596 W KR2009002596 W KR 2009002596W WO 2009139603 A2 WO2009139603 A2 WO 2009139603A2
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- Prior art keywords
- layer
- conductive semiconductor
- conductive
- semiconductor layer
- light emitting
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Definitions
- the embodiment relates to a semiconductor light emitting device.
- the III-V nitride semiconductors include optical devices including blue / green light emitting diodes (LEDs), high-speed switching devices such as metal semiconductor field effect transistors (MOSFETs) and hetero junction field effect transistors (HEMTs), and light sources for lighting or display devices. It has been applied to a variety of applications.
- the light emitting device using the group III nitride semiconductor has a direct transition band gap corresponding to the region from visible light to ultraviolet light, and high efficiency light emission can be realized.
- the nitride semiconductor is mainly used as a light emitting diode (LED) or a laser diode (LD), and research for improving a manufacturing process or light efficiency has been continued.
- LED light emitting diode
- LD laser diode
- the embodiment provides a semiconductor light emitting device including an insulating layer around an outer circumference of a plurality of conductive semiconductor layers.
- the embodiment provides a semiconductor light emitting device including a second electrode layer under the light emitting structure, and including an insulating layer on an outer circumference of at least one of the semiconductor layers of the light emitting structure.
- the embodiment provides a semiconductor light emitting device in which a passivation layer is disposed outside an upper surface of an insulating layer and a second electrode layer around an outer circumference of a light emitting structure.
- a semiconductor light emitting device includes a first conductive semiconductor layer; An active layer under the first conductive semiconductor layer; A second conductive semiconductor layer under the active layer; A second electrode layer under the second conductive semiconductor layer; And an insulating layer around at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
- a semiconductor light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode on the first conductive semiconductor layer; A second electrode layer under the second conductive semiconductor layer; An insulating layer is formed on an outer circumference of the active layer and the second conductive semiconductor layer.
- the embodiment has the effect of preventing current leakage to the outside of the light emitting structure.
- the embodiment can improve the adhesion with the second electrode layer using the insulating layer.
- the embodiment has the effect of reducing the manufacturing process by removing a separate photolithography process for the second electrode layer.
- the embodiment can improve the electrical reliability of the semiconductor light emitting device.
- FIG. 1 is a side cross-sectional view illustrating a semiconductor light emitting device according to a first embodiment.
- FIG. 2 to 9 are views illustrating a manufacturing process of the semiconductor light emitting device according to the first embodiment of FIG. 1.
- FIG. 10 is a side sectional view showing a semiconductor light emitting device according to the second embodiment.
- FIG. 11 is a side cross-sectional view illustrating a semiconductor light emitting device according to a third embodiment.
- FIG. 12 is a side cross-sectional view illustrating a semiconductor light emitting device according to a fourth embodiment.
- each layer, region, pattern, or structure is described as being formed “on” or “under” a substrate, each layer (film), region, pad, or pattern. Where “on” and “under” include both “directly” and “indirectly”.
- FIG. 1 is a side cross-sectional view illustrating a semiconductor light emitting device according to a first embodiment.
- the semiconductor light emitting device 100 may include a first conductive semiconductor layer 110, an active layer 120, a second conductive semiconductor layer 130, an insulating layer 140, and a second electrode layer 150. , The conductive support member 160.
- the semiconductor light emitting device 100 includes an LED using a group III-V compound semiconductor, and the LED may be a colored LED or a UV LED emitting light such as blue, green, or red.
- the emission light of the LED may be implemented in various ways within the technical scope of the embodiment.
- the first conductive semiconductor layer 110 is a compound semiconductor of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.
- a first conductive dopant for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.
- the first conductive dopant includes an N-type dopant such as Si, Ge, Sn, Se, Te, or the like.
- the first conductive semiconductor layer 110 may function as an electrode contact layer, and may be formed as a single layer or a multilayer, but is not limited thereto.
- the first electrode 170 is formed on the first conductive semiconductor layer 110, and the first electrode 170 supplies the first polarity power.
- roughness (not shown) of a predetermined shape may be formed on an upper surface of the first conductive semiconductor layer 110, and the roughness may be added or changed within the technical scope of the embodiment.
- a transmissive electrode layer may be formed on the first conductive semiconductor layer 110, and the transmissive electrode layer diffuses the first polarity power supplied by the first electrode 170 to all regions.
- the permeable electrode layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), May contain at least one of aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO have.
- An active layer 120 is formed under the first conductive semiconductor layer 110, and the active layer 120 may be formed as a single quantum well structure or a multi quantum well structure.
- the active layer 120 may be formed in a period of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer, using a compound semiconductor material of Group III-V elements.
- the active layer 120 may be selected as a material having a band gap energy according to the wavelength of light to emit light.
- the active layer 120 may include a material that emits colored light such as light of blue wavelength, light of red wavelength, and light of green wavelength, but is not limited thereto.
- a conductive clad layer may be formed on or under the active layer 120, and the conductive clad layer may be formed of an AlGaN layer.
- a second conductive semiconductor layer 130 is formed below the active layer 120.
- the second conductive semiconductor layer 130 is a compound semiconductor of Group III-V elements doped with a second conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.
- the second conductive dopant includes a P-type dopant such as Mg and Ze.
- the second conductive semiconductor layer 130 may function as an electrode contact layer, and may be formed as a single layer or a multilayer, but is not limited thereto.
- the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure 135.
- the first conductive semiconductor layer 110 may be a P-type semiconductor
- the second conductive semiconductor layer 130 may be formed of an N-type semiconductor.
- a third conductive semiconductor layer, for example, an N-type semiconductor layer or a P-type semiconductor layer may be formed below the second conductive semiconductor layer 130.
- the light emitting structure 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
- the insulating layer 140 is formed on the outer circumference of the light emitting structure 135.
- the insulating layer 140 functions as a sidewall around the outer circumference of the second conductive semiconductor layer 130, the active layer 120, and the first conductive semiconductor layer 110, and has a band shape or a ring shape. Can be.
- the insulating layer 140 may be formed of an insulating material such as SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2 , but is not limited thereto.
- the insulating layer 140 may be formed as a sidewall around an outer circumference of at least one semiconductor layer.
- the active layer 120 may be formed outside, or may be formed outside the second conductive half body layer 130 and the active layer 120.
- an upper end of the insulating layer 140 may extend to a lower portion of the first conductive semiconductor layer 110.
- a lower end of the insulating layer 140 may extend to a lower portion of the second conductive semiconductor layer 130.
- the insulating layer 140 may be formed to be less than or equal to the thickness of the light emitting structure 135.
- the second electrode layer 150 may be formed under the second conductive semiconductor layer 130 or may extend to the bottom of the insulating layer 140.
- the second electrode layer 150 may be formed of a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof.
- the second electrode layer 150 may be made of a reflective electrode material having a reflectance of 50% or more.
- An ohmic contact layer may be formed between the second electrode layer 150 and the second conductive semiconductor layer 130 in a plurality of patterns having a matrix shape and / or a layer shape.
- the ohmic contact layer may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), At least one of materials such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).
- the second electrode layer 150 may be in Schottky contact or ohmic contact with the second conductive semiconductor layer 130.
- the second electrode layer 150 may be formed on the second conductive semiconductor layer 130. Schottky contact is made, and the ohmic contact layer is in ohmic contact with the second conductive semiconductor layer 130. Accordingly, since the electrical characteristics of the second electrode layer 150 and the ohmic contact layer are different, the current supplied to the second conductive semiconductor layer 130 can be diffused.
- the second electrode layer 150 functions as an electrode for stably supplying a second polarity power to the light emitting structure 135, and reflects light incident through the second conductive semiconductor layer 130.
- the conductive support member 160 is formed under the second electrode layer 150.
- the conductive support member 160 may include copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafers (eg, Si, Ge, GaAs, ZnO, Sic, etc.) may be implemented.
- the conductive support member 160 may be formed by an electroplating method, but is not limited thereto.
- the second electrode layer 150 and the conductive support member 160 may be used as a second electrode part for supplying a second polarity power to the light emitting structure 135, and the second electrode part may be a single layer or a multilayer electrode material. It may be formed as or may be attached with an adhesive under the second conductive semiconductor layer 130.
- the semiconductor light emitting device 100 may prevent the residual material or external moisture from penetrating the outside of the light emitting structure 135 by being disposed outside the light emitting structure 135. Accordingly, electrical shorts between the semiconductor layers 110, 120, and 130 outside the semiconductor light emitting device 100 may be prevented.
- the insulating layer 140 may be disposed outside the light emitting structure 135 to block a current leaking in an outer direction of the light emitting structure 135.
- the current injected through the second electrode layer 150 has a property of traveling toward the outside of the light emitting structure 135, and the current is blocked by the insulating layer 140, thereby It can improve the injection efficiency.
- the insulating layer 140 may be disposed outside the second electrode layer 150 and the second conductive semiconductor layer 130, thereby improving adhesion of the second electrode layer 150.
- FIGS. 2 to 9 are views illustrating a manufacturing process of the light emitting device according to the first embodiment.
- a first conductive semiconductor layer 110 is formed on the substrate 101, an active layer 120 is formed on the first conductive semiconductor layer 110, and a first conductive semiconductor layer 110 is formed on the active layer 120.
- the second conductive semiconductor layer 130 is formed.
- the substrate 101 may be selected from the group consisting of sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, Ga 2 O 3 , GaAs, and the like.
- An uneven pattern may be formed on the surface of the substrate 101, but is not limited thereto.
- Group III-V compound semiconductors may be grown on the substrate 101, and the growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), or dual heat. It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), etc., but is not limited to such equipment.
- the growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), or dual heat. It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), etc., but is not limited to such equipment.
- a buffer layer (not shown) and / or an undoped semiconductor layer (not shown) may be formed between the substrate 101 and the first conductive semiconductor layer 110 using a group III-V compound semiconductor. It can be separated or removed after growth.
- the buffer layer may reduce the lattice constant difference from the substrate, and the undoped semiconductor layer may be a base for growth of the compound semiconductor layer.
- the first conductive semiconductor layer 110 is a compound semiconductor of Group III-V elements doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.
- the first conductive semiconductor layer 110 is an N-type semiconductor layer
- the first conductive dopant includes an N-type dopant such as Si, Ge, Sn, Se, Te, or the like.
- the first conductive semiconductor layer 110 may function as an electrode contact layer, and may be formed as a single layer or a multilayer, but is not limited thereto.
- the active layer 120 may be formed in a single quantum well structure or a multiple quantum well structure.
- the active layer 120 may be formed in a period of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer, using a compound semiconductor material of Group III-V elements.
- a conductive clad layer may be formed on or under the active layer 120, and the conductive clad layer may be formed of an AlGaN layer.
- the second conductive semiconductor layer 130 is formed on the active layer 120.
- the second conductive semiconductor layer 130 is a compound semiconductor of Group III-V elements doped with a second conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected.
- the second conductive dopant includes a P-type dopant such as Mg and Ze.
- the second conductive semiconductor layer 130 may function as an electrode contact layer, and may be formed as a single layer or a multilayer, but is not limited thereto.
- the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure 135.
- the first conductive semiconductor layer 110 may be a P-type semiconductor
- the second conductive semiconductor layer 130 may be formed of an N-type semiconductor.
- a third conductive semiconductor layer, for example, an N-type semiconductor layer or a P-type semiconductor layer may be formed on the second conductive semiconductor layer 130.
- the light emitting structure 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.
- a mask layer 145 is formed in an inner region (eg, a light emitting region) of the second conductive semiconductor layer 130.
- the mask layer 145 is formed on the second conductive semiconductor layer 130 by a photolithography process, and the outer peripheral region 146 of the second conductive semiconductor layer 130 is etched with a predetermined mask pattern. Can be. Accordingly, the mask layer 145 is formed in the inner region of the second conductive semiconductor layer 130 except for the outer circumferential region 146.
- the method of forming the mask layer 145 may be variously changed within the technical scope of the embodiment, but is not limited thereto.
- the first mesa etching is performed through the outer circumferential region 146 of the second conductive semiconductor layer 130.
- the first mesa etching may be performed by a dry or / and wet etching method, and the dry etching equipment includes, but is not limited to, for example, an inductively coupled plasma (ICP).
- ICP inductively coupled plasma
- the depth D1 of the first mesa etching may be formed to a depth at which the substrate 101 is exposed from the second conductive semiconductor layer 130 or a depth at which the first conductive semiconductor layer 110 is exposed. have.
- the depth D1 of the first mesa etching may be performed on at least one layer or all layers of the semiconductor layers 130, 120, and 110 of the light emitting structure 135.
- an insulating layer 140 is formed in the first mesa etched region 147.
- the insulating layer 140 may be formed of an insulating material such as SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO 2 , but is not limited thereto.
- the insulating layer 140 may be formed in a band shape or a ring shape as a sidewall around an outer circumference of the second conductive semiconductor layer 130, the active layer 120, and the first conductive semiconductor layer 110. have.
- the insulating layer 140 is formed around the outer periphery of each of the semiconductor layers 130, 120, and 110 to prevent penetration of residual material or external moisture to the outside, and prevent electrical short between the semiconductor layers 130, 120, and 110. have.
- an upper end of the insulating layer 140 may protrude upward from the second conductive semiconductor layer 130.
- the insulating layer 140 may be formed to be less than or equal to the thickness of the light emitting structure 135.
- the mask layer 145 of FIG. 3 is removed.
- FIG. 6 is a plan view illustrating a plurality of chip regions, and the insulating layer 140 may be formed in a polygonal band or ring shape in the outer peripheral region of each chip.
- the center line L1 of the insulating layer 140 becomes a chip boundary region for cutting to a chip size.
- a second electrode layer 150 is formed on the second conductive semiconductor layer 130.
- the second electrode layer 150 may be formed on the second conductive semiconductor layer 130 or on the second conductive semiconductor layer 130 and the insulating layer 140.
- the second electrode layer 150 may be formed of a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof.
- the second electrode layer 150 may be made of a reflective electrode material having a reflectance of 50% or more.
- An ohmic contact layer may be formed between the second electrode layer 150 and the second conductive semiconductor layer 130 in a plurality of patterns having a matrix shape and / or a layer shape.
- the ohmic contact layer may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), At least one of materials such as indium gallium tin oxide (IGTO) and antimony tin oxide (ATO).
- the second electrode layer 150 may be in Schottky contact or ohmic contact with the second conductive semiconductor layer 130.
- the second electrode layer 150 may be formed on the second conductive semiconductor layer 130. Schottky contact is made, and the ohmic contact layer is in ohmic contact with the second conductive semiconductor layer 130. Accordingly, since the electrical characteristics of the second electrode layer 150 and the ohmic contact layer are different, the current supplied to the second conductive semiconductor layer 130 can be diffused.
- the second electrode layer 150 functions as an electrode for stably supplying a second polarity power to the light emitting structure 135, and reflects light incident through the second conductive semiconductor layer 130.
- the conductive support member 160 is formed on the second electrode layer 150.
- the conductive support member 160 may include copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafers (eg, Si, Ge, GaAs, ZnO, Sic, etc.) may be implemented.
- the conductive support member 160 may be formed by an electroplating method, but is not limited thereto.
- the second electrode layer 150 and the conductive support member 160 may be used as a second electrode part for supplying a second polarity power to the light emitting structure 135, and the second electrode part may be a single layer or a multilayer electrode material. It may be formed into a, or attached in an adhesive manner.
- the conductive support member 160 When the conductive support member 160 is formed, the conductive support member 160 is placed on a base and disposed to face the substrate 101 upward.
- the substrate 101 is separated from the first conductive semiconductor layer 110 by irradiating a laser having a predetermined wavelength through the substrate 101. That is, the substrate 101 may be removed by a laser lift off (LLO) process.
- LLO laser lift off
- the substrate 101 may be separated by removing the buffer layer using a wet etching technique.
- the substrate removal method of the embodiment is an example, and may be removed using various methods.
- the insulating layer 140 is disposed outside the second conductive semiconductor layer 130 and the second electrode layer 150, whereby the second conductive semiconductor layer 130 and the second electrode layer 150 are disposed. Strengthen the adhesive force between) and protect it from external impact. Accordingly, the electrical reliability of the semiconductor light emitting device can be improved.
- the insulating layer 140 may transmit the light of the laser, thereby reducing the impact of the laser.
- the surface of the first conductive semiconductor layer 110 from which the substrate 101 is removed may be polished by an inductively coupled plasma / reactive ion etching (ICP / RIE) method.
- ICP / RIE inductively coupled plasma / reactive ion etching
- roughness may be formed on the surface of the first conductive semiconductor layer 110.
- a first electrode 170 is formed on the first conductive semiconductor layer 110.
- the second mesa etching is performed.
- the second mesa etching is to etch the center portion of the insulating layer 140 disposed around the outer periphery of each chip. That is, etching is performed to a predetermined depth along the chip boundary line L1 of FIG. 6.
- the etching method may be a dry etching or a wet etching method.
- the first electrode 170 may be formed before or after the first mesa etching, and before the formation of the first electrode 170, a light transmissive conductive layer such as ITO may be formed on the first conductive semiconductor layer 110. H) can be formed. The transmissive conductive layer may diffuse the current supplied through the first electrode 170.
- the second mesa etching After the second mesa etching, it is separated into individual chips through a breaking process.
- the insulating layer 140 is etched by the second mesa etching, it is possible to prevent the electrical short problem caused by the etching of the semiconductor material. That is, the stability of the process can be improved.
- the luminous efficiency may be improved by the ohmic characteristic of the insulating layer 140.
- the insulating layer 140 Since the insulating layer 140 is formed, a process of forming a separate insulating layer to protect a part of the outer side of the light emitting structure 135 after chip separation is omitted.
- FIG. 10 is a side sectional view showing a semiconductor light emitting device according to the second embodiment.
- the same parts as in the first embodiment are referred to the first embodiment, and redundant descriptions thereof will be omitted.
- the semiconductor light emitting device 100A includes an insulating layer 142 around an outer circumference of the light emitting structure 135.
- the thickness D2 of the insulating layer 142 may be formed from the second conductive semiconductor layer 142 to a part of the first conductive semiconductor layer 110.
- the insulating layer 142 may perform the same function even if the insulating layer 142 is not formed in the entire outer region of the first conductive semiconductor layer 110.
- the upper point P1 of the insulating layer 142 may vary according to the first mesa etching depth.
- the insulating layer 142 may be formed to have a thickness D3 less than or equal to the active layer 120.
- the insulating layer 142 may be formed from the active layer 120 to the second conductive semiconductor layer 130 or the third conductive semiconductor layer (not shown).
- the first embodiment For the material, function, and effect of the insulating layer 142 in the semiconductor light emitting device 100A, the first embodiment will be referred to.
- FIG. 11 is a side cross-sectional view illustrating a semiconductor light emitting device according to a third embodiment.
- the same parts as in the first embodiment are referred to the first embodiment, and redundant description thereof will be omitted.
- the semiconductor light emitting device 100B includes a light emitting structure 135 and an insulating layer 144 around the outer circumference of the second electrode layer 150.
- the insulating layer 144 may be formed around an outer circumference of the active layer 120, the second conductive semiconductor layer 130, and the second electrode layer 150.
- the insulating layer 144 protrudes to a predetermined thickness D4 below the second conductive semiconductor layer 130, and thus may be disposed outside the second electrode layer 150.
- the second electrode layer 150 may be formed under the second conductive semiconductor layer 130, or may be formed under the second conductive semiconductor layer 130 and the insulating layer 144.
- the insulating layer 144 further moves the outer side of the second electrode layer 150 downward, thereby increasing the separation distance from the semiconductor layers 110, 120, and 130. Such a structure can improve the electrical reliability of the semiconductor light emitting device 100B.
- the upper end of the insulating layer 144 may be formed to a part or the upper end of the first conductive semiconductor layer 110, but is not limited thereto.
- the material, function, and effect of the insulating layer 144 in the semiconductor light emitting device 100B will be described with reference to the first embodiment.
- FIG. 12 is a side cross-sectional view illustrating a semiconductor light emitting device according to a fourth embodiment.
- the same parts as those of the first and second embodiments are referred to the first and second embodiments, and redundant descriptions thereof will be omitted.
- the semiconductor light emitting device 100C forms an insulating layer 142 around an outer circumference of the light emitting structure 135, and a passivation layer 155 around an outer circumference of an upper surface of the second electrode layer 150. Include.
- the passivation layer 155 may be formed in a ring shape or a band shape along an outer circumference between the second electrode layer 150 and the insulating layer 142.
- the passivation layer 155 may be in contact with the outer circumference of the bottom surface of the second conductive semiconductor layer 130, and in the case of a conductive material, may use electrical characteristics.
- the passivation layer 155 may be formed of the same insulating material as the insulating layer 142 or a transparent conductive layer.
- the light transmitting conductive layer may include ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO, ATO, and the like.
- the passivation layer 155 may be formed in the chip boundary region to minimize the impact transmitted to the light emitting structure 135 when the substrate is separated.
- the passivation layer 155 is a transparent conductive layer, the width of the insulating layer 142 may be reduced, thereby improving the emission area.
- the embodiment can provide a semiconductor light emitting device such as an LED.
- the embodiment can improve the reliability according to the manufacturing process of the semiconductor light emitting device.
- the embodiment may be applied to a light source packaging a semiconductor light emitting device in an illumination field, an indication field, a display field, and the like.
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Abstract
Description
Claims (15)
- 제1도전형 반도체층;상기 제1도전형 반도체층 아래에 활성층;상기 활성층 아래에 제2도전형 반도체층;상기 제1도전형 반도체층, 상기 활성층 및 상기 제2도전형 반도체층 중 적어도 상기 활성층의 외측 둘레에 절연층; 및상기 제2도전형 반도체층 아래에 제2전극층을 포함하는 반도체 발광소자.
- 제1항에 있어서, 상기 제1도전형 반도체층 위에 제1전극; 및 상기 제2전극층의 아래에 전도성 지지부재를 포함하는 반도체 발광소자.
- 제1항에 있어서, 상기 절연층은 상기 제2도전형 반도체층 및 상기 활성층의 외측 둘레에 형성되는 반도체 발광소자.
- 제1항에 있어서, 상기 제2전극층은 상기 제2도전형 반도체층 및 상기 절연층의 아래에 반사 전극층을 포함하는 반도체 발광소자.
- 제1항에 있어서, 상기 절연층은 상기 제2도전형 반도체층의 외측부터 상기 제1도전형 반도체층의 외측 일부 또는 외측 전체까지 형성되는 반도체 발광소자.
- 제5항에 있어서, 상기 절연층은 상기 전극층의 외측 둘레에 형성되는 반도체 발광소자.
- 제1항에 있어서, 상기 절연층은 SiO2, Si3N4, Al2O3, TiO2 중 적어도 하나를 포함하는 반도체 발광소자.
- 제3항에 있어서, 상기 절연층과 상기 제2전극층 사이에 페시베이션층을 포함하는 반도체 발광소자.
- 제1항에 있어서, 상기 절연층은 고리 형상 또는 띠 형상으로 형성되는 반도체 발광소자.
- 제1도전형 반도체층, 상기 제1도전형 반도체층 아래에 활성층, 및 상기 활성층 아래에 제2도전형 반도체층을 포함하는 발광 구조물;상기 제1도전형 반도체층 위에 제1전극;상기 제2도전형 반도체층 아래에 제2전극층; 및상기 활성층과 상기 제2도전형 반도체층의 외측 둘레에 절연층을 포함하는 반도체 발광소자.
- 제10항에 있어서, 상기 절연층은 상기 제1도전형 반도체층과 상기 제2전극층 사이에 위치하는 반도체 발광소자.
- 제10항에 있어서, 상기 제2전극층 아래에 전도성 지지부재;상기 제2전극층과 상기 제2도전형 반도체층 사이에 복수개의 패턴을 갖는 오믹 접촉층을 포함하는 반도체 발광소자.
- 제10항에 있어서, 상기 제2도전형 반도체층과 상기 제2전극층 사이에 제3도전형 반도체층을 포함하며,상기 제3도전형 반도체층의 외측 둘레에 상기 절연층이 형성되는 반도체 발광소자.
- 제10항에 있어서, 상기 제2도전형 반도체층과 상기 제2전극층 사이의 외측 둘레에 투광성 전도층을 포함하며,상기 투광성 전도층은 띠 형상 또는 고리 형상으로 형성되는 반도체 발광소자.
- 제10항에 있어서, 상기 절연층은 상기 제1도전성 반도체층의 외측 일부에서 상기 제2도전성 반도체층의 외측까지 배치되는 반도체 발광소자.
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EP09746782.3A EP2290709B1 (en) | 2008-05-16 | 2009-05-15 | Semiconductor light-emitting device |
CN2009801176605A CN102027606B (zh) | 2008-05-16 | 2009-05-15 | 半导体发光器件 |
US12/992,950 US8530919B2 (en) | 2008-05-16 | 2009-05-15 | Semi-conductor light-emitting device |
US13/963,724 US8766308B2 (en) | 2008-05-16 | 2013-08-09 | Semiconductor light-emitting device |
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KR1020080045740A KR20090119596A (ko) | 2008-05-16 | 2008-05-16 | 반도체 발광소자 및 그 제조방법 |
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US12/992,950 A-371-Of-International US8530919B2 (en) | 2008-05-16 | 2009-05-15 | Semi-conductor light-emitting device |
US13/963,724 Continuation US8766308B2 (en) | 2008-05-16 | 2013-08-09 | Semiconductor light-emitting device |
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KR20150112563A (ko) * | 2014-03-28 | 2015-10-07 | 동우 화인켐 주식회사 | 반도체 발광층 소프트 에칭액 조성물, 발광소자 및 디스플레이 소자 |
KR101771461B1 (ko) * | 2015-04-24 | 2017-08-25 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
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Also Published As
Publication number | Publication date |
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EP2290709A2 (en) | 2011-03-02 |
CN102027606A (zh) | 2011-04-20 |
US20110062480A1 (en) | 2011-03-17 |
US8766308B2 (en) | 2014-07-01 |
EP2290709B1 (en) | 2016-08-17 |
CN102027606B (zh) | 2013-04-24 |
US20130320389A1 (en) | 2013-12-05 |
KR20090119596A (ko) | 2009-11-19 |
EP2290709A4 (en) | 2012-10-10 |
US8530919B2 (en) | 2013-09-10 |
WO2009139603A3 (ko) | 2010-02-18 |
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