WO2009101953A1 - 蒸気発生装置、蒸着装置 - Google Patents
蒸気発生装置、蒸着装置 Download PDFInfo
- Publication number
- WO2009101953A1 WO2009101953A1 PCT/JP2009/052268 JP2009052268W WO2009101953A1 WO 2009101953 A1 WO2009101953 A1 WO 2009101953A1 JP 2009052268 W JP2009052268 W JP 2009052268W WO 2009101953 A1 WO2009101953 A1 WO 2009101953A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vapor deposition
- deposition material
- evaporation chamber
- discharge
- tank
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Definitions
- the present invention relates to a steam generator and a vapor deposition apparatus using the steam generator.
- the organic EL element is one of the display elements that have attracted the most attention in recent years, and has excellent characteristics such as high brightness and fast response speed.
- a light emitting region that emits three different colors of red, green, and blue is disposed on a glass substrate.
- the light emitting region is an anode electrode film, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode electrode film laminated in this order, and is a color former added in the light emitting layer. Color is red, green, or blue.
- a hole transport layer, a light emitting layer, an electron transport layer, and the like are generally made of an organic material, and a vapor deposition apparatus is widely used for forming a film of such an organic material.
- vapor deposition container 212 is disposed inside a vacuum chamber 211.
- the vapor deposition container 212 has a container main body 221, and the upper part of the container main body 221 is closed by a lid portion 222 in which one or more discharge ports 224 are formed.
- a powdery organic vapor deposition material 200 is disposed inside the vapor deposition vessel 212.
- Heaters 223 are disposed on the side and bottom surfaces of the vapor deposition vessel 212.
- the inside of the vacuum chamber 211 is evacuated.
- the heater 223 generates heat
- the vapor deposition vessel 212 is heated, and the organic vapor deposition material 200 in the vapor deposition vessel 212 is heated. Is done.
- the organic vapor deposition material 200 is heated to a temperature equal to or higher than the evaporation temperature, the vapor of the organic material is filled in the vapor deposition vessel 212 and discharged from the discharge port 224 into the vacuum chamber 211.
- a holder 210 is disposed above the discharge port 224. If the holder 210 holds the substrate 205, the organic material vapor discharged from the discharge port 224 reaches the surface of the substrate 205, and a hole injection layer or a hole is formed. Organic thin films such as a transport layer and a light emitting layer are formed. An organic thin film can be sequentially formed on a plurality of substrates 205 by passing the substrates 205 one by one over the discharge port 224 while releasing the organic material vapor.
- the organic vapor deposition material 200 in the vapor deposition vessel 212 is exposed to a high temperature for a long time because the film formation process is continuously performed for 120 hours or more while heating the organic material to 250 ° C. to 450 ° C. Thus, it reacts with moisture in the vapor deposition vessel 212 and changes its quality, or decomposition by heating proceeds. As a result, the organic vapor deposition material 200 is deteriorated compared to the initial state, and the film quality of the organic thin film is deteriorated.
- the present invention is for solving the above-mentioned problems, and its purpose is to form a thin film with good film quality.
- the present invention is a vapor generating device having an evaporation chamber and a supply device for supplying a vapor deposition material into the evaporation chamber, wherein the supply device is provided with a liquid vapor deposition material.
- the present invention is a steam generator, comprising: a heating member disposed inside the evaporation chamber; and a heating unit that heats the heating member.
- the vapor deposition material discharged from the discharge port is the heating member.
- a steam generator configured to be disposed on a member.
- the present invention is a vapor deposition device, the vapor generating device, a discharge device connected to the evaporation chamber and supplied with the vapor generated in the evaporation chamber, and the vapor is discharged from the discharge device into the internal space.
- a vapor deposition apparatus having a vacuum chamber.
- Vapor deposition material can be evaporated in the required amount accurately. Since the vapor deposition material is not heated for a long time, it does not deteriorate and a thin film with good film quality can be obtained.
- Vapor deposition apparatus 11 Film formation tank (vacuum tank) 20 ; Steam generator 21 ; Evaporation chamber 25 ; Heating member 30 ; Supply device 31 ; Tank 35 ; Discharge head 39 ; Vapor deposition material 50 ; Discharge device
- the manufacturing apparatus 1 indicates an example of the manufacturing apparatus of the present invention used for manufacturing an organic EL element.
- the manufacturing apparatus 1 includes a transfer chamber 2, one or a plurality of vapor deposition devices 10a to 10c, a sputtering chamber 7, carry-in / out chambers 3a and 3b, and processing chambers 6 and 8, and the vapor deposition devices 10a to 10c.
- the sputtering chamber 7, the loading / unloading chambers 3a and 3b, and the processing chambers 6 and 8 are connected to the transfer chamber 2, respectively.
- a vacuum exhaust system 9 is connected to the transfer chamber 2, the respective vapor deposition apparatuses 10 a to 10 c, the sputtering chamber 7, the carry-in / out chambers 3 a and 3 b, and the processing chambers 6 and 8.
- the vacuum exhaust system 9 forms a vacuum atmosphere inside the transfer chamber 2, inside the vapor deposition apparatuses 10a to 10c, inside the processing chambers 6 and 8, inside the sputter chamber 7, inside the carry-in chamber 3a, and inside the carry-out chamber 3b. Is done.
- a transfer robot 5 is disposed inside the transfer chamber 2, and the substrate is transferred in a vacuum atmosphere by the transfer robot 5, and processing such as heating and cleaning is performed inside the processing chambers 6 and 8.
- a transparent conductive film (lower electrode) is formed on the substrate surface, and organic thin films such as an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer are formed by the vapor deposition apparatuses 10a to 10c. 7, an upper electrode is formed on the organic thin film to obtain an organic EL element. The obtained organic EL element is carried out from the carry-out chamber 3b.
- the lower electrode is previously formed in the substrate surface with another manufacturing apparatus, and if necessary, after patterning this lower electrode to a predetermined shape, the said manufacturing apparatus 1
- the organic EL element may be manufactured by forming the organic thin film and the upper electrode on the lower electrode in the order described.
- FIG. 1 is a schematic cross-sectional view of the vapor deposition apparatus 10b of the present invention.
- the vapor deposition apparatus 10b includes a film formation tank 11 including a vacuum tank, a discharge apparatus 50, and one or more vapor generation apparatuses 20. is doing.
- At least a part of the discharge device 50 is disposed inside the film formation tank 11, and one or a plurality of discharge ports 55 are formed in the part of the discharge device 50 disposed inside the film formation tank 11.
- the internal space of the film formation tank 11 and the internal space of the discharge device 50 are connected to each other via the discharge port 55.
- a switching device 70 is provided between one end and the other end of each pipe 71.
- the switching device 70 When the switching device 70 is opened, the steam generator 20 is connected to the discharge device 50, and when the switching device 70 is closed, the steam generator 20 is disconnected from the discharge device 50.
- the switching device 70 can be individually switched between an open state and a closed state, and each steam generator 20 can be individually connected to or disconnected from the discharge device 50.
- FIG. 3 is a cross-sectional view of the steam generator 20.
- the steam generator 20 includes a supply device 30, an evaporation chamber 21, a heating member 25, and a heating unit 48.
- the heating member 25 is disposed inside the evaporation chamber 21.
- the heating means 48 is attached to one or both of the evaporation chamber 21 and the heating member 25. When the heating means 48 is energized from the power source 47, the member to which the heating means 48 is not attached is also raised by radiant heat or heat conduction. Warming, both the evaporation chamber 21 and the heating member 25 are heated.
- the supply device 30 includes a discharge head 35, a tank 31, and a discharge chamber 41. Openings are formed in the ceiling of the evaporation chamber 21 and the bottom wall of the discharge chamber 41, respectively.
- the discharge chamber 41 is attached to the evaporation chamber 21 so that the opening of the bottom wall is in airtight communication with the opening of the ceiling of the evaporation chamber 21.
- the discharge head 35 has one or more discharge ports 38.
- the discharge head 35 is disposed inside the discharge chamber 41 so that the discharge port 38 faces the surface of the heating member 25 through the communicating opening.
- a heat insulating member is disposed between the discharge chamber 41 and the evaporation chamber 21 so that heat is not easily transmitted to the discharge head 35, and the evaporation chamber 21 and the heating member are also heated when the evaporation chamber 21 and the heating member 25 are heated. It will not be as high as 25.
- FIG. 3 shows a state in which the liquid deposition material 39 is accommodated in the tank 31.
- One end of a supply pipe 32 is connected to the tank 31, and the other end of the supply pipe 32 is connected to a discharge head 35.
- a valve 33 is provided between one end and the other end of the supply pipe 32.
- valve 33 When the valve 33 is opened, the internal space of the tank 31 is connected to the internal space of the discharge head 35, and the vapor deposition material 39 in the tank 31 moves to the discharge head 35. Conversely, when the valve 33 is closed, the internal space of the tank 31 is blocked from the internal space of the discharge head 35, and the vapor deposition material 39 in the tank 31 does not move to the discharge head 35.
- a pressure generating device 36 is attached to the ejection head 35, and the pressure generating device 36 is connected to a control device 37.
- the pressure generating device 36 applies pressure to the vapor deposition material 39 inside the discharging head 35, and the inside of the discharging head 35.
- the vapor deposition material 39 is pushed out from the discharge port 38 and discharged as droplets.
- no drive voltage is applied to the pressure generator 36, the vapor deposition material 39 does not leak from the discharge port 38 and is held in the discharge head 35.
- each discharge port 38 faces the surface of the heating member 25, the droplets of the vapor deposition material 39 discharged from the discharge port 38 land on the surface of the heating member 25. At this time, if the heating member 25 is heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material 39, the deposited vapor deposition material 39 evaporates and vapor is generated.
- the pipe 71 is connected to the evaporation chamber 21 in the steam generator 20.
- the switching device 70 When the switching device 70 is kept open, the internal space of the evaporation chamber 21 is connected to the internal space of the discharge device 50, and the vapor generated in the evaporation chamber 21 moves to the discharge device 50 and then from the discharge port 55. It is discharged into the film forming tank 11.
- the vacuum exhaust system 9 is connected to at least the film formation tank 11 and the tank 31, respectively.
- the valve 33 between the tank 31 and the discharge head 35 is closed, and the space above the liquid surface of the vapor deposition material 39 in the tank 31 is evacuated while the discharge head 35 is empty, and the inside of the film formation tank 11 is evacuated.
- a predetermined pressure for example, 10 ⁇ 5 Pa
- the heating member 25, the evaporation chamber 21, and the movement path of the vapor are heated by the heating means 48, and each component (organic material, solvent) of the vapor deposition material 39 is evaporated in the vacuum atmosphere.
- a possible heating temperature (250 ° C. or higher and 400 ° C. or lower) is set.
- the valve 29 between the evacuation system 9 and the evaporation chamber 21 is closed, and the evaporation chamber 21 is connected to the discharge device 50. Then, the vapor deposition material 39 is discharged to the heating member 25.
- an organic material and a solvent vapor which are constituent components of the vapor deposition material 39, are generated. Since the evaporation chamber 21 and the vapor movement path are maintained at the above heating temperature, the vapor generated in the evaporation chamber 21 is discharged from the discharge port 55 without being deposited on the way.
- a substrate holder 15 is disposed inside the film forming tank 11. With the vacuum atmosphere maintained, the substrate 81 is carried into the film formation tank 11, and at least until the vapor begins to be released from the discharge port 55, the substrate holder 15 is held by the substrate holder 15, and the surface is released from the discharge device 50. It faces the outlet 55. The vapor of the organic material and the vapor of the solvent released from the discharge port 55 reach the surface of the substrate 81.
- the solvent used for the vapor deposition material 39 is mainly composed of alcohol having a lower molecular weight than the organic material, and the vapor pressure of the solvent is higher than the vapor pressure of the organic material.
- the temperature of the surface of the substrate 81 and the vacuum atmosphere inside the film formation tank 11 are set so that even if an organic material is deposited on the surface of the substrate 81, the vapor of the solvent is not deposited, and the solvent is deposited on the surface of the substrate 81. Without being discharged to the vacuum exhaust system 9, an organic material thin film (organic thin film) grows on the surface of the substrate 81.
- the substrate 81 on which film formation has been completed is removed from the substrate holder 15, and a new substrate 81 is carried into the film formation tank 11 and attached to the substrate holder 15 (exchange of the substrate 81). If the vapor deposition material 39 is discharged to the heating member 25 after replacing the substrate 81, an organic thin film can be formed on the new substrate 81. If the replacement of the substrate 81 and the formation of the organic thin film are repeated, the organic thin film can be continuously formed on the plurality of substrates 81.
- the evaporation chamber 21 may be evacuated by the evacuation system 9 after the film formation is completed until the next film formation is started to remove residual vapor.
- two or more different organic thin films can be formed on the surface of the substrate 81 if different vapor deposition materials 39 are accommodated in the vapor generating devices 20, respectively. Can do. Specifically, after depositing one organic thin film, the substrate 81 is not replaced, and the evaporation chamber 21 that has been deposited is shut off from the discharge device 50 while being held by the substrate holder 15, and another vapor is generated. The evaporation chamber 21 of the device 20 is connected to the discharge device 50, and vapors of different vapor deposition materials are generated in the evaporation chamber 21.
- a mask is disposed between the substrate 81 and the emission device 50, the film formation of one color colored layer is completed, and the next coloring is performed. If the relative positional relationship between the mask and the substrate 81 is changed before the start of film formation, colored layers of the respective colors are formed in different regions on the surface of the substrate 81.
- the pressure generator 36 is not particularly limited, and is, for example, a piezoelectric element (piezo element) or a heater.
- the pressure generating device 36 is a piezoelectric element
- the piezoelectric element when the driving voltage is applied, the piezoelectric element is deformed and pushes the vapor deposition material 39 (piezo method).
- the pressure generator 36 is a heater, when a driving voltage is applied, the heater is heated up, the vapor deposition material 39 in the discharge head 35 is heated to generate bubbles, and the bubbles push out the vapor deposition material 39 (thermal method). ).
- the pressure generator 36 is arranged in the vicinity of each discharge port 38.
- the controller 37 can individually apply a voltage to the pressure generator 36.
- the amount of the vapor deposition material 39 ejected from each ejection port 38 at a time is small, and one or two or more ejection ports 38 can be selected and ejected from among a plurality of vapor deposition materials 39. Control of the amount of the material 39 is easy.
- the vapor deposition from the discharge port 38 is performed in the state where the driving voltage is not applied to the pressure generator 36.
- the material 39 does not leak out.
- the discharge head 35 does not reach a high temperature and is maintained below the heating temperature (less than 240 ° C.), and the vapor deposition material 39 does not evaporate inside the discharge head 35. Therefore, the vapor deposition material 39 in the discharge head 35 does not change in quality and the meniscus is not disturbed, so that the discharge failure of the discharge head 35 does not occur.
- the heat insulating member 57 is made of a heat insulating material such as ceramic, and is disposed between the discharge chamber 41 and the evaporation chamber 21 to prevent heat conduction from the evaporation chamber 21. Since the tank 31 is disposed outside the evaporation chamber 21 and away from the evaporation chamber 21, it is not heated and the vapor deposition material 39 in the tank 31 does not deteriorate.
- the film is formed under the same conditions as the actual film forming process before the actual film forming process, and the relationship between the amount of the vapor deposition material 39 and the film thickness The required amount of the vapor deposition material 39 necessary for forming a film having a thickness determined from the obtained relationship is obtained.
- the discharge amount of the vapor deposition material 39 discharged from the discharge port 38 at one time is known.
- the number of ejection ports 38 to be ejected is selected, and the number of ejections for which the total of the ejection amounts is a necessary amount is determined for each selected ejection port 38 from the number of the selected ejection ports 38 and one ejection amount.
- the film formation time required for forming one organic thin film is fixed.
- the number of ejections of each selected ejection port 38 from the start of ejection until the film formation time elapses is set to the number obtained in advance.
- the ejection is stopped. Since the total amount of the vapor deposition materials 39 discharged to the heating member 25 becomes a necessary amount necessary for film formation with a predetermined film thickness, the organic thin film grown on the surface of the substrate 81 has a predetermined film thickness.
- each discharge port 38 If the number of discharges of each discharge port 38 is made plural and the required amount of the vapor deposition material 39 is supplied in a plurality of times, a large amount of the vapor deposition material 39 is not supplied to the heating member 25 at a time. The material 39 does not scatter.
- the discharge interval of each discharge port 38 is set to an interval at which the film formation speed is constant, the film thickness distribution and film quality of the organic thin film are improved as compared with the case where the film formation speed varies.
- the heating method of the heating member 25 is not particularly limited.
- the heating member 25 may be made of a high-resistance conductive material, and an electromagnetic field may be formed inside the evaporation chamber 21 to heat the heating member 25 by induction.
- a window through which laser light can be transmitted is provided in the evaporation chamber 21, and the heating member 25 may be heated by irradiating the surface of the heating member 25 with laser light from the external laser generator. .
- the droplets that have landed on the mounting surface spread on the mounting surface, so that the vapor deposition material 39 evaporates in a short time. If the distance from the landing position of the droplet on the mounting surface to the lower end is such that when the heating member 25 is heated to the heating temperature, all the landed droplets are evaporated before reaching the lower end, the vapor deposition material 39 Evaporates without falling from the heating member 25.
- the constituent material of the heating member 25 is not particularly limited, but a material having high thermal conductivity such as a metal, an alloy, or an inorganic substance is desirable. Among them, silicon carbide (SiC) is particularly desirable because it is excellent in both thermal conductivity and mechanical strength.
- the installation location of the steam generator 20 is not particularly limited, and a part or all of the steam generator 20 may be installed inside the same vacuum chamber 11 as the discharge device 50.
- the evaporation chamber 21 and the film formation tank may be integrated, and the substrate 81 may be disposed in the evaporation chamber 21 to perform film formation.
- the film formation tank 11 becomes large. Therefore, as shown in FIG. 2, it is desirable that the film formation tank 11 and the evaporation chamber 21 be separated and the vapor generated in the evaporation chamber 21 is guided to the discharge device 50 and then released into the film formation tank 11.
- the solvent used for the vapor deposition material 39 is not particularly limited, in order to reduce the residual amount of the solvent in the organic thin film, it is desirable to use a lower alcohol (having 1 to 6 carbon atoms) as a main component. If the film quality of the organic thin film is not affected, a surfactant or the like can be added to the vapor deposition material 39.
- the vapor generating apparatus 20 and the vapor deposition apparatus 10 of the present invention can be used for film formation other than the film formation of the organic thin film of the organic EL element.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
ホール輸送層、発光層、電子輸送層等は一般に有機材料で構成されており、このような有機材料の膜の成膜には蒸着装置が広く用いられる。
有機蒸着材料200が蒸発温度以上の温度に加熱されると、蒸着容器212内に、有機材料蒸気が充満し、放出口224から真空槽211内に放出される。
本発明は蒸気発生装置であって、前記蒸発室の内部に配置された加熱部材と、前記加熱部材を加熱する加熱手段とを有し、前記吐出口から吐出された前記蒸着材料は、前記加熱部材上に配置されるように構成された蒸気発生装置である。
本発明は蒸着装置であって、前記蒸気発生装置と、前記蒸発室に接続され、前記蒸発室内で発生した蒸気が供給される放出装置と、前記放出装置から内部空間に前記蒸気が放出される真空槽とを有する蒸着装置である。
図1の蒸着装置10a~10cのうち、少なくとも1台は本発明の蒸着装置10bで構成されている。図2は本発明の蒸着装置10bの模式的な断面図であり、蒸着装置10bは、真空槽からなる成膜槽11と、放出装置50と、1又は2以上の蒸気発生装置20とを有している。
切替装置70を開状態にすると蒸気発生装置20が放出装置50に接続され、切替装置70を閉状態にすると蒸気発生装置20が放出装置50から遮断される。蒸気発生装置20が複数の場合、切替装置70は個別に開状態と閉状態に切替可能であり、各蒸気発生装置20を放出装置50に個別に接続又は遮断することができる。
蒸発室21の天井と、吐出室41の底壁にはそれぞれ開口が形成されている。吐出室41は、底壁の開口が、蒸発室21の天井の開口と気密に連通するように、蒸発室21に取り付けられている。
圧力発生装置36に駆動電圧を印加しない場合は、吐出口38から蒸着材料39が漏れ出さず、吐出ヘッド35内に保持される。
発光性有機材料等の主成分(ホスト)に、着色剤等の添加剤(ドーパント)が添加された有機材料を、溶剤に溶解又は分散させて、液状の蒸着材料39を用意する。この蒸着材料39をタンク31に収容する。
蒸着材料39に用いられる溶剤は、有機材料よりも低分子のアルコールを主成分とし、溶剤の蒸気圧は有機材料の蒸気圧よりも高い。
成膜が終了してから、次の成膜を開始するまでの間、蒸発室21の内部を真空排気系9で真空排気し、残留蒸気を除去してもよい。
また、マスクを用いないか、マスクと基板81との位置関係を変えなければ、各色の着色層が同じ場所に積層され、白色光用の有機EL素子が得られる。
圧力発生装置36が圧電素子の場合、駆動電圧を印加すると圧電素子が変形して、蒸着材料39を押し出す(ピエゾ方式)。
圧力発生装置36がヒーターの場合、駆動電圧を印加すると、ヒーターが昇温して、吐出ヘッド35内の蒸着材料39が加熱されて気泡が発生し、その気泡が蒸着材料39を押し出す(サーマル方式)。
尚、タンク31は蒸発室21の外部で、蒸発室21から離間して配置されているから、加熱されず、タンク31内の蒸着材料39は劣化しない。
更に、蒸発室21にレーザー光が透過可能な窓を設け、該窓を介して、外部のレーザー発生装置から、加熱部材25表面にレーザー光を照射して、加熱部材25を加熱してもよい。
載置面の液滴の着弾位置から下端までの距離を、加熱温度に加熱部材25が加熱された時に、着弾した液滴が下端に到達するまでに全部蒸発するようにすれば、蒸着材料39は加熱部材25から零れ落ちずに蒸発する。
蒸発室21と成膜槽を一体化し、蒸発室21内に基板81を配置して成膜を行ってもよいが、成膜槽11と蒸発室21を分離した場合に比べて、成膜槽11が大型になる。従って、図2に示したように、成膜槽11と蒸発室21を分離し、蒸発室21で発生した蒸気を放出装置50に導いてから、成膜槽11内に放出させることが望ましい。
本発明の蒸気発生装置20及び蒸着装置10は、有機EL素子の有機薄膜の成膜以外の成膜にも用いることができる。
Claims (4)
- 蒸発室と、
前記蒸発室内に蒸着材料を供給する供給装置とを有する蒸気発生装置であって、
前記供給装置は、液状の蒸着材料が配置されるタンクと、
前記タンクに接続された吐出ヘッドとを有し、
前記吐出ヘッドには吐出口が設けられ、
前記蒸着材料は前記タンクから前記吐出ヘッドに供給され、前記吐出口から前記蒸発室内部空間に向かって吐出される蒸気発生装置。 - 前記蒸発室の内部に配置された加熱部材と、
前記加熱部材を加熱する加熱手段とを有し、
前記吐出口から吐出された前記蒸着材料は、前記加熱部材上に配置されるように構成された請求項1記載の蒸気発生装置。 - 請求項1又は請求項2のいずれか1項記載の蒸気発生装置と、
前記蒸発室に接続され、前記蒸発室内で発生した蒸気が供給される放出装置と、
前記放出装置から内部空間に前記蒸気が放出される真空槽とを有する蒸着装置。 - 前記吐出ヘッドは、前記吐出ヘッドの内部の前記蒸着材料に圧力を印加する圧力発生装置を有し、圧力が印加された前記蒸着材料が前記吐出口から吐出される請求項1記載の蒸気発生装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980105786.0A CN101946562B (zh) | 2008-02-14 | 2009-02-12 | 蒸气产生装置及蒸镀装置 |
KR1020107017648A KR101202229B1 (ko) | 2008-02-14 | 2009-02-12 | 증기 발생 장치, 증착 장치 |
JP2009553428A JP5265583B2 (ja) | 2008-02-14 | 2009-02-12 | 蒸着装置 |
US12/855,349 US20110008539A1 (en) | 2008-02-14 | 2010-08-12 | Vapor generator and vapor deposition apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008032799 | 2008-02-14 | ||
JP2008-032799 | 2008-02-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/855,349 Continuation US20110008539A1 (en) | 2008-02-14 | 2010-08-12 | Vapor generator and vapor deposition apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009101953A1 true WO2009101953A1 (ja) | 2009-08-20 |
Family
ID=40956983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/052268 WO2009101953A1 (ja) | 2008-02-14 | 2009-02-12 | 蒸気発生装置、蒸着装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110008539A1 (ja) |
JP (1) | JP5265583B2 (ja) |
KR (1) | KR101202229B1 (ja) |
CN (1) | CN101946562B (ja) |
TW (1) | TWI516622B (ja) |
WO (1) | WO2009101953A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014009386A (ja) * | 2012-06-29 | 2014-01-20 | Ulvac Japan Ltd | 蒸気放出装置及び成膜装置 |
JP2015062254A (ja) * | 2012-07-30 | 2015-04-02 | 株式会社日立国際電気 | 気化装置、基板処理装置、及び半導体装置の製造方法 |
JP2017526177A (ja) * | 2014-08-01 | 2017-09-07 | オーソゴナル,インコーポレイテッド | 素子のフォトリソグラフパターン化方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110195187A1 (en) * | 2010-02-10 | 2011-08-11 | Apple Inc. | Direct liquid vaporization for oleophobic coatings |
WO2016029229A1 (en) * | 2014-08-22 | 2016-02-25 | Hzo, Inc. | Incorporation of additives into protective coatings |
CN107400861B (zh) * | 2017-09-21 | 2020-05-08 | 深圳市华格纳米科技有限公司 | 一种自动化连续式电阻蒸发镀膜装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0354130A (ja) * | 1989-07-20 | 1991-03-08 | Fujikura Ltd | 原料ガス供給装置 |
WO2003085157A1 (fr) * | 2002-04-05 | 2003-10-16 | Matsushita Electric Industrial Co., Ltd. | Procede et dispositif pour preparer un film de resine mince |
JP2004273873A (ja) * | 2003-03-11 | 2004-09-30 | Hitachi Ltd | 半導体製造装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3823591B2 (ja) * | 1999-03-25 | 2006-09-20 | 三菱電機株式会社 | Cvd原料用気化装置およびこれを用いたcvd装置 |
JP2001308082A (ja) * | 2000-04-20 | 2001-11-02 | Nec Corp | 液体有機原料の気化方法及び絶縁膜の成長方法 |
JP2004169144A (ja) * | 2002-11-21 | 2004-06-17 | Toppan Printing Co Ltd | 有機物蒸気の被覆装置 |
US20050079278A1 (en) * | 2003-10-14 | 2005-04-14 | Burrows Paul E. | Method and apparatus for coating an organic thin film on a substrate from a fluid source with continuous feed capability |
JP4601535B2 (ja) * | 2005-09-09 | 2010-12-22 | 株式会社リンテック | 低温度で液体原料を気化させることのできる気化器 |
-
2009
- 2009-02-12 CN CN200980105786.0A patent/CN101946562B/zh active Active
- 2009-02-12 KR KR1020107017648A patent/KR101202229B1/ko active IP Right Grant
- 2009-02-12 JP JP2009553428A patent/JP5265583B2/ja active Active
- 2009-02-12 WO PCT/JP2009/052268 patent/WO2009101953A1/ja active Application Filing
- 2009-02-13 TW TW098104695A patent/TWI516622B/zh active
-
2010
- 2010-08-12 US US12/855,349 patent/US20110008539A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0354130A (ja) * | 1989-07-20 | 1991-03-08 | Fujikura Ltd | 原料ガス供給装置 |
WO2003085157A1 (fr) * | 2002-04-05 | 2003-10-16 | Matsushita Electric Industrial Co., Ltd. | Procede et dispositif pour preparer un film de resine mince |
JP2004273873A (ja) * | 2003-03-11 | 2004-09-30 | Hitachi Ltd | 半導体製造装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014009386A (ja) * | 2012-06-29 | 2014-01-20 | Ulvac Japan Ltd | 蒸気放出装置及び成膜装置 |
JP2015062254A (ja) * | 2012-07-30 | 2015-04-02 | 株式会社日立国際電気 | 気化装置、基板処理装置、及び半導体装置の製造方法 |
JP2017526177A (ja) * | 2014-08-01 | 2017-09-07 | オーソゴナル,インコーポレイテッド | 素子のフォトリソグラフパターン化方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101202229B1 (ko) | 2012-11-16 |
JP5265583B2 (ja) | 2013-08-14 |
TW200944604A (en) | 2009-11-01 |
CN101946562B (zh) | 2013-07-17 |
TWI516622B (zh) | 2016-01-11 |
US20110008539A1 (en) | 2011-01-13 |
KR20100102210A (ko) | 2010-09-20 |
JPWO2009101953A1 (ja) | 2011-06-09 |
CN101946562A (zh) | 2011-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101622372B (zh) | 蒸镀源、蒸镀装置、有机薄膜的成膜方法 | |
JP5265583B2 (ja) | 蒸着装置 | |
JP4996430B2 (ja) | 蒸気発生装置、蒸着装置、成膜方法 | |
JP5282038B2 (ja) | 蒸着装置 | |
JP2007186787A (ja) | 蒸着坩堝並びにこれを備えた薄膜形成装置、及び表示装置の製造方法 | |
JP5512881B2 (ja) | 蒸着処理システム及び蒸着処理方法 | |
JP5384770B2 (ja) | 蒸着粒子射出装置および蒸着装置 | |
WO2013122059A1 (ja) | 成膜装置 | |
KR101191690B1 (ko) | 증착원, 증착 장치, 유기 박막의 성막 방법 | |
KR20150030970A (ko) | 증발유닛 및 이를 포함하는 증착장치 | |
JP5411243B2 (ja) | 蒸着装置 | |
JP7444843B2 (ja) | 蒸着用坩堝及び蒸着装置 | |
JP2010021153A (ja) | 溶液噴出装置及び溶液噴出方法 | |
JP2006002218A (ja) | 成膜源、成膜方法、および加熱板、ならびに有機el素子の製造方法 | |
KR101696768B1 (ko) | 리니어 증발 소스 | |
KR100705348B1 (ko) | 유기 전계발광표시소자의 제조장치 | |
JP2024063338A (ja) | 蒸発源、成膜装置、及び成膜方法 | |
CN113699487A (zh) | 蒸发源装置、蒸镀装置及蒸发源装置的控制方法 | |
KR20060115770A (ko) | 유기 전계발광 표시소자의 제조장치 및 제조방법 | |
KR20060054863A (ko) | 유기 전계발광 표시소자의 제조장치 | |
KR20160080195A (ko) | 증착 장치 | |
KR20090044049A (ko) | 가스 분사 장치 및 이를 이용한 유기 박막 증착 장치와유기 박막 증착 방법 | |
JP2014009389A (ja) | 成膜材料放出装置、液体材料真空成膜装置 | |
JP2012026041A (ja) | 蒸着装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980105786.0 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09710644 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009553428 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20107017648 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09710644 Country of ref document: EP Kind code of ref document: A1 |