WO2009100797A1 - Device for fixing an electronic component to a carrier by means of a conductive refractory metal-glass paste - Google Patents

Device for fixing an electronic component to a carrier by means of a conductive refractory metal-glass paste Download PDF

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Publication number
WO2009100797A1
WO2009100797A1 PCT/EP2008/068335 EP2008068335W WO2009100797A1 WO 2009100797 A1 WO2009100797 A1 WO 2009100797A1 EP 2008068335 W EP2008068335 W EP 2008068335W WO 2009100797 A1 WO2009100797 A1 WO 2009100797A1
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WO
WIPO (PCT)
Prior art keywords
fixing
paste
carrier
electronic component
metal
Prior art date
Application number
PCT/EP2008/068335
Other languages
German (de)
French (fr)
Inventor
Uwe Glanz
Oliver Wolst
Stefan Henneck
Leonore Schwegler
Ulrich Eisele
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP08872385A priority Critical patent/EP2243025A1/en
Publication of WO2009100797A1 publication Critical patent/WO2009100797A1/en

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • G—PHYSICS
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Definitions

  • the fixation of semiconductor elements, for. B. based on silicon, is carried out in hybrid circuits with ceramic carrier material according to the prior art, usually via an inorganic filled, thermally or UV-curable synthetic resin adhesive.
  • the usual operating temperature range during subsequent use rarely exceeds 120 0 C. It, however, are at particularly high thermal claimed compounds or structural adhesive bonds to about 180 0 C z. B. with silicone adhesives feasible.
  • the electrical connection of the semiconductor chips to the board is usually via wire bonding to the noble metal of the chip or the ceramic substrate, but can also be realized with conductive adhesive.
  • the disadvantage of the wire bond connections is their high mechanical sensitivity, since very thin wires (eg of gold) are used, which are not long-term stable in use against vibrations or passing media (gas sensor!).
  • the bonding process which is usually done with gold wires, is a costly process.
  • the use temperature of the wire bond is several hundred degrees higher than that of the best polymer adhesives, depending on the metal used for the wire.
  • the electrical connection via a conductive adhesive has the advantage of better mechanical stability, especially against vibration, however, the operating temperature is similar limited as in the polymer adhesives for chip fixation. More cost effective is the Leitkleberfiguration, because of the use of silver as a current carrier and the simpler process, but this is only feasible at relatively large distances of the conductors.
  • the fixing element or agent is such that it retains its fixing properties at operating temperatures up to at least 500 ° C. This results in a very cost-effective, mechanically robust and high temperature resistant, permanent fixation of a chip to at least 500 0 C. This also allows a further simplification of the process and thus a cost savings in manufacturing.
  • the carrier having conductor tracks is designed as a ceramic carrier and the high temperature resistant fixing element or means for electrical connection of the electronic component such as semiconductor element or a transistor chip is thermomechanically stable.
  • FET field-effect transistor
  • This also gives a cost-effective, mechanically robust and high-temperature-resistant fixation and an electrical connection of a field effect transistor chip (FET) based on SiC or sapphire on a ceramic Zr ⁇ 2 or Al2O3 ceramic with conductor tracks for a sensor application in a flowing gas mixture.
  • the electrical connection of a field effect transistor chip (FET) based on SiC or sapphire on a ceramic support of Zr ⁇ 2 - or Al 2 ⁇ 3 ceramic with tracks for a sensor application in a flowing gas mixture is obtained in a cost effective and easy to realizing device.
  • the paste has a glass content of between 5% by volume and 25% by volume, in particular a proportion of between 10% by volume and 15% by volume, based on the solids content, and this at a stoving temperature of approx. ⁇ 600 ° C melts, selectively wets the surface of the carrier and thus forms adhesion points at which the sintered metal, such as. B. Ag adheres or enters a particularly good mechansiche connection with the surface roughness.
  • the advantage of the invention is also to enable the problematic by very different thermal expansion coefficients (WAK) monolithic compound of different materials.
  • WAK thermal expansion coefficients
  • stresses in the ductile Ag layer of the baked-in paste that result from the different thermal expansion of the bonding partners can be reduced by deformation of this layer.
  • high temperature resistant ceramic adhesive could be used, but need a specially roughened underside of the chip material and yet react similarly brittle after curing. This causes the same problems as with a glass layer.
  • the paste has a glass content of between 5% by volume and 25% by volume, in particular a proportion of between 10% by volume and 15% by weight, based on the solids content, this at a baking temperature of approximately ⁇ 600 ° C melts and selectively wets the surface of the support and thus forms points at which the sintered metal, such.
  • a chip connection on a ceramic carrier for high temperature application is provided, which according to the invention is used in a NOx sensor.
  • the solution proposed according to the invention can also be used with other chip-based gas-sensitive sensors with semiconductor components.
  • the metal such as. B. Ag is contained in graded grains in the paste to form together with the glass content of a solids content of> 50 VoI%, whereby an advantageously minimized drying and sintering shrinkage is achieved.
  • one or more fractions of the metal particles can be used in platelet form in order to further reduce the sintering shrinkage.
  • the electrical connection with the aid of the fixing element or fixing agent according to the invention also has the advantage that it has a higher mechanical stability when vibrations occur and thus can be exposed to high operating temperatures.
  • the metal portion of the fixing agent consists of at least one metal of the group Ag, Au, Pd, Pt, Rh, Ir, Ru, Re.
  • the fixing or fixing a metal-glass paste which are applied as small droplets punctiform on contact pads of the ceramic substrate, wherein the gas-sensitive side of a semiconductor element or chips is directed downward and the flow a measuring gas below the chip position, a cavity may be provided.
  • the mechanical fixation and at the same time the electrical connection of the semiconductor chip to the ceramic carrier can advantageously be carried out in one process step. This further simplifies the fixation process and reduces manufacturing costs.
  • Figure 1 is a perspective view of a device for fixing and / or attachment of an electronic component or semiconductor element on a ceramic carrier by means of a fixing element or means;
  • FIG. 2 shows the application of an Ag paste with the aid of a dosing device or dispenser
  • Figure 3 shows another embodiment of the mounting of a chip and the electrical
  • the carrier 2 is designed as a ceramic carrier.
  • the sensor chip 1 is provided with a plurality of contact elements, which are referred to below as pads 8.
  • the sensor chip 1 is placed on the surface of the carrier 2.
  • the carrier 2 is equipped with corresponding pads 7.
  • the fixing element or means 3 consists of a paste with a metal content as main component.
  • This paste 3 or paste bead may have a glass content of between 5% by volume and 25% by volume, in particular with a proportion between 10% by volume and 15% by volume, based on the solids content, the solids content in the paste being> 50% by volume.
  • the glass melts at a baking temperature of about ⁇ 600 0 C, wets the surface of the carrier at certain points and thus forms adhesion points at which the sintered metal, such as. B Ag, liable or can become entangled.
  • a metal-glass paste 3.1 can be applied in the form of dots to the contact pads of the ceramic carrier with the aid of a suitable dispenser 5 or screen printing and stencil printing as small droplets.
  • a chip or semiconductor chip 1.1 is then aligned and deposited in a so-called flip-chip method with contact pads 8.1 on the paste points of the carrier 2.
  • the gas-sensitive side of the chip 1.1 is directed downward.
  • the metal-glass paste 3.1 is dried and baked at about ⁇ 600 0 C, the newly formed composite. This results in electrically conductive connection points, which at the same time accomplish the mechanical fixation of the chip on the support 2.
  • Suitable metals for the paste 3.1 are all noble metals, such as Ag, Au, Pd, Pt, etc., or alloys thereof. With the help of a bevel, the mounting on the component can be easily detected.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

The invention relates to a device for fixing and/or attaching an electronic component such as a semiconductor element (1), and the electroconductive connection thereof to strip conductors, to a carrier (2), by means of a fixing element or a fixing means (3). The fixing element or means (3) is designed such that it maintains its fixing properties at operating temperatures of up to at least 500°C, and the electronic component is placed on the carrier (2) by means of a paste (3) containing Ag, and fixed or rigidly connected to said carrier. The paste (3) preferably comprises a glass part of between 5 vol % and 25 vol %, especially between 10 vol % and 15 vol %, in relation to the solid part, which melts at a baking temperature of approx. ≤ 600 °C, and wets the surface of the carrier at certain points, thereby creating adhesion points to which the sintered metal, such as Ag, adheres or sticks.

Description

Beschreibung description
Titeltitle
EINRICHTUNG ZUR FIXIERUNG EINES ELEKTRONISCHEN BAUSTEINS AUF EINEM TRÄGER MITTELS EINER LEITFÄHIGEN HOCHSCHMELZENDEN METALL-GLAS-PASTEDEVICE FOR FIXING AN ELECTRONIC COMPONENT ON A SUPPORT BY MEANS OF A CONDUCTIVE HIGH-MELTING METAL-GLASS PASTE
Stand der TechnikState of the art
Die Fixierung von Halbleiterelementen, z. B. auf Basis von Silizium, erfolgt in Hybridschaltungen mit keramischem Trägermaterial nach dem Stand der Technik meist über einen anorganisch gefüllten, thermisch oder UV-härtbaren Kunstharzklebstoff. Der übliche Betriebs- temperaturbereich im späteren Einsatz übersteigt selten 1200C. Es sind allerdings bei thermisch besonders hoch beanspruchten Verbindungen noch organische Klebungen bis ca. 1800C z. B. mit Siliconklebern machbar. Darüber hinaus existieren keine geeignete Materialien, die eine solch sichere und stoffschlüssige Verbindung von Chip und Träger ermöglichen würden.The fixation of semiconductor elements, for. B. based on silicon, is carried out in hybrid circuits with ceramic carrier material according to the prior art, usually via an inorganic filled, thermally or UV-curable synthetic resin adhesive. The usual operating temperature range during subsequent use rarely exceeds 120 0 C. It, however, are at particularly high thermal claimed compounds or structural adhesive bonds to about 180 0 C z. B. with silicone adhesives feasible. In addition, there are no suitable materials that would allow such a secure and cohesive connection of chip and carrier.
Für Gassensoren auf Halbleiterbasis sind aber vor allem für die Abgassensorik höhere Betriebstemperaturen (bis 5000C) zu erwarten, oder für die Funktion des Chips notwendigerweise durch aktive Beheizung konstant zu halten. Somit ist hier die Applikation der üblichen organischen Kleber nicht möglich.For gas sensors based on semiconductors, however, higher operating temperatures (up to 500 ° C.) are to be expected, especially for the exhaust gas sensor system, or necessarily to be kept constant for the function of the chip by active heating. Thus, the application of the usual organic adhesive is not possible here.
Die elektrische Anbindung der Halbleiterchips an die Platine erfolgt in der Regel über Drahtbonden auf die Edelmetallpads des Chips bzw. des Keramikträgers, ist aber auch mit Leitkleber realisierbar. Der Nachteil der Drahtbond- Verbindungen ist ihre hohe mechanische Empfindlichkeit, da sehr dünne Drähte (z. B. aus Gold) eingesetzt werden, die im Einsatz gegenüber Vibrationen oder vorbeiströmenden Medien (Gassensor!) nicht langzeitstabil sind. Zudem ist der Bondprozess, der normalerweise mit Golddrähten erfolgt, ein kostenintensives Verfahren. Die Einsatztemperatur der Drahtbondverbindung liegt jedoch um mehrere hundert Grad höher als die der besten Polymerklebstoffe, in Abhängigkeit des eingesetzten Metalls für den Draht. Die elektrische Anbindung über einen Leitkleber hat dagegen den Vorteil einer besseren mechanischen Stabilität, vor allem gegenüber Vibrationen, allerdings ist die Betriebstemperatur ähnlich begrenzt wie bei den Polymerklebstoffen für die Chipfixierung. Kostengünstiger ist die Leitklebervariante, wegen des Einsatzes von Silber als Stromträger und des einfacheren Prozesses, ist diese jedoch nur bei relativ großen Abständen der Leiterbahnen realisierbar.The electrical connection of the semiconductor chips to the board is usually via wire bonding to the noble metal of the chip or the ceramic substrate, but can also be realized with conductive adhesive. The disadvantage of the wire bond connections is their high mechanical sensitivity, since very thin wires (eg of gold) are used, which are not long-term stable in use against vibrations or passing media (gas sensor!). In addition, the bonding process, which is usually done with gold wires, is a costly process. However, the use temperature of the wire bond is several hundred degrees higher than that of the best polymer adhesives, depending on the metal used for the wire. The electrical connection via a conductive adhesive, however, has the advantage of better mechanical stability, especially against vibration, however, the operating temperature is similar limited as in the polymer adhesives for chip fixation. More cost effective is the Leitklebervariante, because of the use of silver as a current carrier and the simpler process, but this is only feasible at relatively large distances of the conductors.
Offenbarung der ErfindungDisclosure of the invention
Erfindungsgemäß wird vorgeschlagen, dass das Fixierelement oder -mittel derart beschaffen ist, dass es bei Betriebstemperaturen bis zu mindestens 5000C seine Fixiereigenschaften beibehält. Hierdurch erhält man eine sehr kostengünstige, mechanisch robuste und hochtemperaturbeständige, dauerhafte Fixierung eines Chips bis mindestens 5000C. Hierdurch wird auch eine weitere Vereinfachung des Prozesses und damit eine Kostenersparnis in der Fertigung ermöglicht.According to the invention it is proposed that the fixing element or agent is such that it retains its fixing properties at operating temperatures up to at least 500 ° C. This results in a very cost-effective, mechanically robust and high temperature resistant, permanent fixation of a chip to at least 500 0 C. This also allows a further simplification of the process and thus a cost savings in manufacturing.
Hierzu ist es vorteilhaft, dass der Leiterbahnen aufweisende Träger als Keramikträger ausgebildet ist und das hochtemperaturbeständige Fixierelement oder -mittel zur elektrischen Anbindung des elektronischen Bausteins wie Halbleiterelement oder eines Transistorchips thermomechanisch stabil ist. Eine zusätzliche Möglichkeit ist gemäß einer Weiterbildung der Erfindung, dass das hochtemperatur- und vibrationsbeständige Fixierelement oder -mittel zur Fixierung eines Feld-Effekt-Transistors (FET), der auf der Basis von SiC bzw. Saphir beruht, auf dem Träger befestigt wird, der auf der Basis von Oxidkeramik wie Zrθ2 oder AI2O3 beruht, wobei das Verbindungsmittel auf der Basis von Metall wie Ag beruht. Hierdurch erhält man ebenfalls eine kostengünstige, mechanisch robuste und hochtemperaturbeständige Fixierung sowie eine elektrische Anbindung eines Feld-Effekt-Transistorchips (FET) auf Basis von SiC bzw. Saphir auf einem Keramikträger aus Zrθ2- oder AI2O3- Keramik mit Leiterbahnen für eine Sensoranwendung in einem strömenden Gasgemisch. Durch die elektrische Anbindung eines Feld-Effekt-Transistorchips (FET) auf Basis von SiC bzw. Saphir auf einem Keramikträger aus Zrθ2- oder Al2θ3-Keramik mit Leiterbahnen für eine Sensoranwendung in einem strömenden Gasgemisch erhält man eine kostengünstig und einfach zu realisierende Einrichtung. Mit den Methoden und Materialien nach dem Stand der Technik ist nur eine elektrische Anbindung über einen Bondprozess realisierbar, wobei die mechanische Robustheit erst über eine zusätzliche Einbettung oder poröse Kapselung erreicht werden kann. Mit den erfindungsgemäßen Materialien wird eine temperatur- und vibrationsbeständige Fixierung auf dem Keramikträger geschaffen. Außerdem kann auch bei dem sehr hohen Unterschied der Wärmeausdehnungskoeffizienten bei der Paarung SiC-Chip mit Zrθ2 Keramik durch die vorteilhafte Materialauswahl mechanische Spannung ausgegli- chen werden. Die Kompensierung des hohen Unterschieds der Wärmeausdehnungskoeffizienten wäre mit sprödem Glaslot auch über eine kurze Distanz nicht realisierbar, da zu hohe mechanische Spannungen auftreten würden, was wiederum zu Rissbildung führt. Ferner ist es vorteilhaft, dass der elektronische Baustein wie Halbleiterelement mit Hilfe einer Ag enthaltenden Paste auf dem Träger aufgesetzt und fixiert bzw. mit diesem fest verbunden wird.For this purpose, it is advantageous that the carrier having conductor tracks is designed as a ceramic carrier and the high temperature resistant fixing element or means for electrical connection of the electronic component such as semiconductor element or a transistor chip is thermomechanically stable. An additional possibility is, according to a development of the invention, that the high-temperature and vibration-resistant fixing element or means for fixing a field-effect transistor (FET), which is based on SiC or sapphire, mounted on the carrier, the based on oxide ceramics such as ZrO 2 or Al 2 O 3, wherein the bonding agent is based on metal such as Ag. This also gives a cost-effective, mechanically robust and high-temperature-resistant fixation and an electrical connection of a field effect transistor chip (FET) based on SiC or sapphire on a ceramic Zrθ2 or Al2O3 ceramic with conductor tracks for a sensor application in a flowing gas mixture. The electrical connection of a field effect transistor chip (FET) based on SiC or sapphire on a ceramic support of Zrθ 2 - or Al 2 θ 3 ceramic with tracks for a sensor application in a flowing gas mixture is obtained in a cost effective and easy to realizing device. With the methods and materials according to the prior art, only an electrical connection via a bonding process can be realized, wherein the mechanical robustness can only be achieved via an additional embedding or porous encapsulation. With the materials according to the invention a temperature and vibration-resistant fixation is created on the ceramic support. In addition, even with the very high difference in the coefficients of thermal expansion in the pairing, SiC chip with ZrO 2 ceramic can be compensated for by the advantageous material selection of mechanical stress. The compensation of the high difference of the coefficients of thermal expansion would not be feasible with brittle solder glass, even over a short distance, since excessive mechanical stresses would occur, which in turn leads to cracking. Furthermore, it is advantageous for the electronic component, such as semiconductor element, to be placed on the support with the aid of an Ag-containing paste and fixed or firmly connected thereto.
Vorteilhaft ist es hierzu auch, dass mit Hilfe eines Dispensers oder über Drucktechniken wie z.B. Sieb- oder Schablonendruck eine Ag enthaltende Pastenraupe zwischen Kontakt-Pads auf dem Keramikträger und zwischen Kontakt-Pads auf dem elektronischen Baustein wie Halbleiterelement bzw. Chip aufgebracht ist.It is also advantageous for this purpose that with the help of a dispenser or printing techniques such. Screen or stencil printing Ag containing paste bead between contact pads on the ceramic substrate and between contact pads on the electronic component such as semiconductor element or chip is applied.
Gemäß einer bevorzugten Ausführungsform der erfindungsgemäßen Lösung ist schließlich vorgesehen, dass die Paste einen Glas-Anteil zwischen 5 VoI % und 25 VoI % insbesondere einen Anteil zwischen 10 VoI % und 15 VoI % bezogen auf den Feststoffanteil aufweist und dieses bei einer Einbrenntemperatur von ca. < 600° C schmilzt, punktuell die Oberfläche des Trägers benetzt und damit Haftpunkte ausbildet, an denen das gesinterte Metall, wie z. B. Ag haftet bzw. eine besonders gute mechansiche Verbindung mit den Oberflächenrauhigkei- ten eingeht. Mit Hilfe der Erfindung wird also eine hochtemperatur- und vibrationsbeständige mechanische und elektrische Verbindung des SiC -Chips oder anderen Chipmaterialien zu dem Zrθ2-Träger oder andere Keramikmaterialien mittels einer Postfϊring-Metallpaste auf Basis von z. B. Ag (Silber) und einem Glaszusatz in einem Arbeitsgang realisiert.According to a preferred embodiment of the solution according to the invention, it is finally provided that the paste has a glass content of between 5% by volume and 25% by volume, in particular a proportion of between 10% by volume and 15% by volume, based on the solids content, and this at a stoving temperature of approx. <600 ° C melts, selectively wets the surface of the carrier and thus forms adhesion points at which the sintered metal, such as. B. Ag adheres or enters a particularly good mechansiche connection with the surface roughness. With the help of the invention, therefore, a high-temperature and vibration-resistant mechanical and electrical connection of the SiC chip or other chip materials to the Zrθ 2 carrier or other ceramic materials by means of a Postfϊring metal paste based on z. B. Ag (silver) and a glass additive realized in one operation.
Der Vorteil der Erfindung besteht auch darin, die durch sehr unterschiedliche Wärmeausdehnungskoeffizienten (WAK) problematische monolithische Verbindung unterschiedlicher Materialien zu ermöglichen. Im Gegensatz zu einer starren und spröden Verbindung auf Basis eines Glaslotes können in der duktilen Ag-Schicht der eingebrannten Paste Spannun- gen, die aus der unterschiedlichen thermischen Dehnung der Verbindungspartner resultieren, durch Deformation dieser Schicht abgebaut werden. Bei zu großen Unterschieden, wie z. B. bei der Kombination von SiC-Chip (WAK=4,2 XlO 6K1) mit ZrO2-Keramik (WAK=8,5 XlO 6K1) ist eine Überbrückung mit einem reinen Glaslot nur über eine relativ dicke Schicht mit gradiertem WAK über verschiedene Glasschichten sehr aufwändig zu realisieren. Ebenfalls wären hochtemperaturbeständige Keramikkleber einsetzbar, die aber eine speziell aufgeraute Unterseite des Chipmaterials benötigen und dennoch nach Aushärtung ähnlich spröde reagieren. Dadurch treten die gleichen Probleme wie bei einer Glasschicht auf.The advantage of the invention is also to enable the problematic by very different thermal expansion coefficients (WAK) monolithic compound of different materials. In contrast to a rigid and brittle compound based on a glass solder, stresses in the ductile Ag layer of the baked-in paste that result from the different thermal expansion of the bonding partners can be reduced by deformation of this layer. For too big differences, such. B. in the combination of SiC chip (WAK = 4.2 XlO 6 K 1 ) with ZrO 2 ceramic (WAK = 8.5 XlO 6 K 1 ) is a bridging with a pure glass solder only over a relatively thick layer with Graded CTE over different glass layers very complex to realize. Also, high temperature resistant ceramic adhesive could be used, but need a specially roughened underside of the chip material and yet react similarly brittle after curing. This causes the same problems as with a glass layer.
Von besonderer Bedeutung ist für die vorliegende Erfindung, dass die Paste einen Glas- Anteil zwischen 5 VoI % bis 25 VoI % insbesondere einen Anteil zwischen 10 VoI % bis 15 VoI % bezogen auf den Feststoffanteil aufweist, dieses bei einer Einbrenntemperatur von ca. < 600° C schmilzt und punktuell die Oberfläche des Trägers benetzt und damit Haft- punkte ausbildet, an denen das gesinterte Metall, wie z. B. Ag haftet bzw. sich verkrallen kann. Hierdurch wird, wie bereits erläutert, eine Chip-Anbindung auf einem Keramikträger für Hochtemperaturanwendung geschaffen, die erfindungsgemäß in einem NOx-Sensor zur Anwendung kommt. Neben der Anwendung bei einem NOx-Sensor kann die erfmdungsge- maß vorgeschlagene Lösung auch bei anderen auf Chip basierenden gassensitiven Sensoren mit Halbleiterbausteinen zur Anwendung kommen.Of particular importance for the present invention is that the paste has a glass content of between 5% by volume and 25% by volume, in particular a proportion of between 10% by volume and 15% by weight, based on the solids content, this at a baking temperature of approximately <600 ° C melts and selectively wets the surface of the support and thus forms points at which the sintered metal, such. B. Ag adheres or can dig. As a result, as already explained, a chip connection on a ceramic carrier for high temperature application is provided, which according to the invention is used in a NOx sensor. In addition to the application in the case of a NOx sensor, the solution proposed according to the invention can also be used with other chip-based gas-sensitive sensors with semiconductor components.
Im Zusammenhang mit der erfindungsgemäßen Ausbildung und Anordnung ist es von Vorteil, dass das Metall, wie z. B. Ag in abgestuften Körnungen in der Paste enthalten ist, um zusammen mit dem Glasanteil einen Feststoffanteil von >50 VoI % zu bilden, wodurch eine vorteilhaft minimierte Trocknungs- und Sinterschwindung erreicht wird. Hierbei können eine oder mehrere Fraktionen der Metallpartikel in Plättchenform eingesetzt werden, um weiterhin die Sinterschwindung zu reduzieren.In connection with the design and arrangement according to the invention, it is advantageous that the metal, such as. B. Ag is contained in graded grains in the paste to form together with the glass content of a solids content of> 50 VoI%, whereby an advantageously minimized drying and sintering shrinkage is achieved. In this case, one or more fractions of the metal particles can be used in platelet form in order to further reduce the sintering shrinkage.
Die elektrische Anbindung mit Hilfe des erfindungsgemäßen Fixierelements oder Fixiermittels hat ferner den Vorteil, das sie bei Auftreten von Vibrationen eine höhere mechanische Stabilität aufweist und somit hohen Betriebstemperaturen ausgesetzt werden kann.The electrical connection with the aid of the fixing element or fixing agent according to the invention also has the advantage that it has a higher mechanical stability when vibrations occur and thus can be exposed to high operating temperatures.
Vorteilhaft ist es auch, dass der Metallanteil des Fixierungsmittels aus zumindest einem Me- tall der Gruppe Ag, Au, Pd, Pt, Rh, Ir, Ru, Re besteht.It is also advantageous that the metal portion of the fixing agent consists of at least one metal of the group Ag, Au, Pd, Pt, Rh, Ir, Ru, Re.
In weiterer Ausgestaltung der Erfindung ist es vorteilhaft, dass das Fixierelement oder Fixiermittel eine Metall-Glas-Paste ist, die als kleine Tröpfchen punktförmig auf Kontaktpads des Keramikträgers aufgetragen sind, wobei die gassensitive Seite eines Halbleiterelements bzw. Chips nach unten gerichtet ist und zur Anströmung eines Messgases unterhalb der Chip-Position ein Hohlraum vorgesehen sein kann. In vorteilhafter Weise kann hierdurch die mechanische Fixierung und gleichzeitig die elektrische Anbindung des Halbleiterchips auf dem keramischen Träger in einem Prozessschritt durchgeführt werden. So wird eine weitere Vereinfachung des Fixierungs-Prozesses erreicht und die Fertigungskosten werden gesenkt. In a further embodiment of the invention, it is advantageous that the fixing or fixing a metal-glass paste, which are applied as small droplets punctiform on contact pads of the ceramic substrate, wherein the gas-sensitive side of a semiconductor element or chips is directed downward and the flow a measuring gas below the chip position, a cavity may be provided. In this way, the mechanical fixation and at the same time the electrical connection of the semiconductor chip to the ceramic carrier can advantageously be carried out in one process step. This further simplifies the fixation process and reduces manufacturing costs.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Anhand der Zeichnungen wird die Erfindung nachstehend eingehender beschrieben. Es zeigt:With reference to the drawings, the invention will be described in more detail below. It shows:
Figur 1 eine perspektivische Darstellung einer Einrichtung zur Fixierung und/oder Befestigung eines elektronischen Bausteins bzw. Halbleiterelements auf einem Keramikträger mit Hilfe eines Fixierelements oder -mittels;Figure 1 is a perspective view of a device for fixing and / or attachment of an electronic component or semiconductor element on a ceramic carrier by means of a fixing element or means;
Figur 2 das Aufbringen einer Ag-Paste mit Hilfe eines Dosierungsgerätes bzw. Dispensers;FIG. 2 shows the application of an Ag paste with the aid of a dosing device or dispenser;
Figur 3 eine weitere Ausführungsform der Montage eines Chips und die elektrischeFigure 3 shows another embodiment of the mounting of a chip and the electrical
Anbindung auf dem Keramikträger mit Hilfe einer Metall-Glas-Paste.Connection on the ceramic carrier with the help of a metal-glass paste.
Ausführungsformembodiment
Die Darstellung gemäß Figur 1 zeigt eine Einrichtung zur Fixierung und/oder Befestigung eines elektronischen Bausteins bzw. Halbleiterelements 1 auf einem Träger 2 auf der Basis von ZrO2 oder A12O3 mit Hilfe eines Fixierelements oder -mittels 3. Der Träger 2 ist als Keramikträger ausgebildet. Gemäß Fig. 1 wird der Sensor-Chip 1 mit mehren Kontaktelementen versehen, die nachstehend als Pads 8 bezeichnet werden. Der Sensorchip 1 wird auf die Oberfläche des Trägers 2 gesetzt. Der Träger 2 ist mit entsprechenden Pads 7 ausgestattet. Das Fixierelement oder -mittel 3 besteht aus einer Paste mit Metall- Anteil als Hauptbe- standteil. Diese Paste 3 bzw. Pastenraupe kann einen Glas-Anteil zwischen 5 VoI % bis 25 VoI % insbesondere mit einem Anteil zwischen 10 VoI % und 15 VoI % bezogen auf den Feststoffanteil aufweisen, wobei der Feststoffanteil in der Paste >50 VoI % beträgt. Das Glas schmilzt bei einer Einbrenntemperatur von ca. < 6000C, benetzt punktuell die Oberfläche des Trägers und bildet damit Haftpunkte aus, an denen das gesinterte Metall, wie z. B Ag, haftet bzw. sich verkrallen kann.1 shows a device for fixing and / or fixing an electronic component or semiconductor element 1 on a carrier 2 based on ZrO 2 or A 12 O 3 with the aid of a fixing element or means 3. The carrier 2 is designed as a ceramic carrier. According to FIG. 1, the sensor chip 1 is provided with a plurality of contact elements, which are referred to below as pads 8. The sensor chip 1 is placed on the surface of the carrier 2. The carrier 2 is equipped with corresponding pads 7. The fixing element or means 3 consists of a paste with a metal content as main component. This paste 3 or paste bead may have a glass content of between 5% by volume and 25% by volume, in particular with a proportion between 10% by volume and 15% by volume, based on the solids content, the solids content in the paste being> 50% by volume. The glass melts at a baking temperature of about <600 0 C, wets the surface of the carrier at certain points and thus forms adhesion points at which the sintered metal, such as. B Ag, liable or can become entangled.
Nach einem anderem Ausführungsbeispiel gemäß Fig. 3 kann eine Metall-Glas-Paste 3.1 als kleine Tröpfchen punktförmig auf die Kontaktpads des Keramikträgers mit Hilfe eines geeigneten Dispensers 5 oder Siebdruck sowie Schablonendruck aufgetragen werden. Ein Chip bzw. Halbleiterchip 1.1 wird anschließend in sogenannter Flip-Chip-Methode mit Kontaktpads 8.1 auf die Pastenpunkte des Trägers 2 ausgerichtet und abgesetzt. Damit ist auch die gassensitive Seite des Chips 1.1 nach unten gerichtet. Für die nötige Anströmung mit dem Messgas kann unter Umständen ein ausgesparter Hohlraum 9 unter der Chip-Position im Träger 2 notwendig sein. Im weiteren Prozess wird die Metall-Glas-Paste 3.1 getrocknet und bei ca. < 6000C der neu entstandene Verbund eingebrannt. Hierdurch entstehen elektrisch leitfähige Verbindungspunkte, die zugleich die mechanische Fixierung des Chips auf dem Träger 2 bewerkstelligen. Als Metalle für die Paste 3.1 kommen alle Edelmetalle, wie Ag, Au, Pd, Pt usw. bzw. Legierungen daraus in Frage. Mit Hilfe eines Anschliffs kann die Befestigungsart am Bauteil leicht nachgewiesen werden. According to another embodiment according to FIG. 3, a metal-glass paste 3.1 can be applied in the form of dots to the contact pads of the ceramic carrier with the aid of a suitable dispenser 5 or screen printing and stencil printing as small droplets. A chip or semiconductor chip 1.1 is then aligned and deposited in a so-called flip-chip method with contact pads 8.1 on the paste points of the carrier 2. Thus, the gas-sensitive side of the chip 1.1 is directed downward. For the necessary flow with the sample gas may under certain circumstances a recessed cavity 9 under the chip position be necessary in the carrier 2. In the further process, the metal-glass paste 3.1 is dried and baked at about <600 0 C, the newly formed composite. This results in electrically conductive connection points, which at the same time accomplish the mechanical fixation of the chip on the support 2. Suitable metals for the paste 3.1 are all noble metals, such as Ag, Au, Pd, Pt, etc., or alloys thereof. With the help of a bevel, the mounting on the component can be easily detected.

Claims

Ansprüche claims
1. Einrichtung zur Fixierung und/oder Befestigung eines elektronischen Bausteins wie Halbleiterelement (1) auf einem Träger (2) mit Hilfe eines Fixierelements oder Fixiermittels (3), dadurch gekennzeichnet, dass das Fixierelement oder -mittel (3) derart beschaffen ist, dass es bei Betriebstemperaturen bis zu mindestens 5000C seine Fixiereigenschaften beibehält.1. Device for fixing and / or fixing an electronic component such as semiconductor element (1) on a support (2) by means of a fixing or fixing means (3), characterized in that the fixing element or means (3) is such that it retains its fixing properties at operating temperatures up to at least 500 ° C.
2. Einrichtung nach Anspruch 1, dadurch gekennzeichnet, dass der Leiterbahnen aufweisende Träger (2) als Keramikträger ausgebildet ist und das hochtemperatur-beständige Fixierelement oder -mittel (3) zur elektrischen Anbindung des elektronischen Bausteins wie Halbleiterelement (1) oder eines Transistorchips eingesetzt wird und temperatur- und/oder vibrationsbeständig ist.2. Device according to claim 1, characterized in that the conductor tracks having carrier (2) is designed as a ceramic carrier and the high-temperature-resistant fixing element or means (3) for electrical connection of the electronic component such as semiconductor element (1) or a transistor chip is used and is temperature and / or vibration resistant.
3. Einrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das hochtemperatur- und vibrationsbeständige Fixierelement oder -mittel (3) zur Fixierung eines Feld-Effekt- Transistors (FET), der auf der Basis von SiC bzw. Saphir beruht, auf dem Träger (2) befestigt wird, der auf der Basis von ZrO2 oder Al2O3 beruht, wobei das Verbindungs- mittel auf der Basis von Metall wie Ag beruht.3. Device according to claim 1 or 2, characterized in that the high-temperature and vibration-resistant fixing element or means (3) for fixing a field effect transistor (FET), which is based on SiC or sapphire, on the Support based on ZrO 2 or Al 2 O 3 is based (2), wherein the connecting means based on metal such as Ag.
4. Einrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der elektronische Baustein wie Halbleiterelement (1) mit Hilfe einer Ag enthaltenden Paste (3) auf dem Träger (2) aufgesetzt und fixiert bzw. mit diesem fest verbunden wird.4. Device according to one of the preceding claims, characterized in that the electronic component such as semiconductor element (1) with the aid of an Ag-containing paste (3) placed on the support (2) and fixed or firmly connected thereto.
5. Einrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass mit Hilfe eines Dispensers (5) die Paste bzw. Pastenraupe (3) zwischen Kontakt- Pads (7) auf dem Keramikträger (2) und den Kontakt-Pads (8) auf dem elektronischen Baustein wie Halbleiterelement (1) bzw. Chip aufgebracht ist.5. Device according to one of the preceding claims, characterized in that with the aid of a dispenser (5) the paste or paste bead (3) between contact pads (7) on the ceramic carrier (2) and the contact pads (8) the electronic component such as semiconductor element (1) or chip is applied.
6. Einrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Paste (3) einen Anteil zwischen 5 VoI % und 25 VoI % insbesondere einen Glas- Anteil zwischen 10 VoI % und 15 VoI % bezogen auf den Feststoffanteil aufweist, das bei einer Einbrenntemperatur von ca. < 6000C schmilzt, punktuell die Oberfläche des Trägers benetzt und damit Haftpunkte ausbildet, an denen das gesinterte Metall, wie z. B Ag, haftet bzw. sich verkrallen kann. 6. Device according to one of the preceding claims, characterized in that the paste (3) has a proportion of between 5% by volume and 25% by volume, in particular a glass proportion of between 10% by volume and 15% by weight, based on the solids content, in a Firing temperature of about <600 0 C melts, selectively wets the surface of the carrier and thus forms adhesion points at which the sintered metal, such as. B Ag, liable or can become entangled.
7. Einrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass in der Paste (3) das Metall, wie z. B. Ag, in abgestuften Körnungen enthalten ist, um zusammen mit dem Glasanteil einen Feststoffanteil von >50 VoI % zu bilden, wodurch eine vorteilhaft minimierte Trocknungs- und Sinterschwindung erreicht wird.7. Device according to one of the preceding claims, characterized in that in the paste (3) the metal, such as. B. Ag, is contained in graded grains in order to form a solids content of> 50% by volume together with the glass content, whereby an advantageously minimized drying and sintering shrinkage is achieved.
8. Einrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass zumindest teilweise Körnungen des Metallanteils der Paste (3) in Plättchenform vorliegen.8. Device according to one of the preceding claims, characterized in that at least partially granulations of the metal portion of the paste (3) are present in platelet form.
9. Einrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Metallanteil des Fixierungsmittels aus zumindest einem Metall der Gruppe Ag, Au, Pd, Pt, Rh, Ir, Ru, Re besteht.9. Device according to one of the preceding claims, characterized in that the metal portion of the fixing agent consists of at least one metal of the group Ag, Au, Pd, Pt, Rh, Ir, Ru, Re.
10. Einrichtung zur Fixierung und/oder Befestigung eines elektronischen Bausteins wie Halbleiterelement (1) auf einem Träger (2) mit Hilfe eines Fixierelements oder Fixiermittels (3), dadurch gekennzeichnet, dass das Fixierelement oder -mittel eine Metall-Glas- Paste (3.1) ist, die als kleine Tröpfchen punktförmig auf Kontaktpads (8.1) des Keramikträgers (2) aufgetragen sind, wobei die gassensitive Seite eines Halbleiterelements bzw. Chips (1.1) nach unten gerichtet ist und zur Anströmung eines Messgases unter- halb der Chip-Position ein Hohlraum (9) vorgesehen sein kann. 10. Device for fixing and / or fixing an electronic component such as semiconductor element (1) on a support (2) by means of a fixing or fixing means (3), characterized in that the fixing element or means a metal-glass paste (3.1 ), which are applied as small droplets on contact pads (8.1) of the ceramic carrier (2), wherein the gas-sensitive side of a semiconductor element or chip (1.1) is directed downward and to the flow of a sample gas below the chip position Cavity (9) may be provided.
PCT/EP2008/068335 2008-02-11 2008-12-30 Device for fixing an electronic component to a carrier by means of a conductive refractory metal-glass paste WO2009100797A1 (en)

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DE102008008535A DE102008008535A1 (en) 2008-02-11 2008-02-11 Device for fixing an electronic component such as semiconductor element

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DE102011003481A1 (en) * 2011-02-02 2012-08-02 Robert Bosch Gmbh An electronic component comprising a ceramic carrier and use of a ceramic carrier
EP2548530B1 (en) 2011-07-19 2014-03-19 W & H Dentalwerk Bürmoos GmbH Illuminating device for a medical, in particular dental instrument
DE102012221990A1 (en) * 2012-11-30 2014-06-05 Robert Bosch Gmbh Connecting means for connecting at least two components using a sintering process
DE102013204804A1 (en) 2013-03-19 2014-09-25 Robert Bosch Gmbh Sensor device and method for producing a sensor device

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