WO2009078244A1 - 磁気ランダムアクセスメモリ、及び、磁気ランダムアクセスメモリの初期化方法 - Google Patents

磁気ランダムアクセスメモリ、及び、磁気ランダムアクセスメモリの初期化方法 Download PDF

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Publication number
WO2009078244A1
WO2009078244A1 PCT/JP2008/071103 JP2008071103W WO2009078244A1 WO 2009078244 A1 WO2009078244 A1 WO 2009078244A1 JP 2008071103 W JP2008071103 W JP 2008071103W WO 2009078244 A1 WO2009078244 A1 WO 2009078244A1
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WO
WIPO (PCT)
Prior art keywords
magnetization
layer
random access
access memory
magnetic random
Prior art date
Application number
PCT/JP2008/071103
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English (en)
French (fr)
Inventor
Tetsuhiro Suzuki
Kiyokazu Nagahara
Shunsuke Fukami
Nobuyuki Ishiwata
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009546192A priority Critical patent/JP5360600B2/ja
Publication of WO2009078244A1 publication Critical patent/WO2009078244A1/ja

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

磁気ランダムアクセスメモリは、磁化記録層とピン層とバイアス磁性層とを具備する。磁化記録層は垂直磁気異方性を有する強磁性層である。ピン層は非磁性バリア層を介して磁化記録層に接続されている。バイアス磁性層は非磁性バリア層を介して磁化記録層に接続されている。磁化記録層は、磁化反転領域と第１磁化固定領域と第２磁化固定領域とを備える。磁化反転領域は反転可能な磁化を有しピン層とオーバーラップする。第１磁化固定領域は磁化反転領域の第１境界に接続され磁化の向きが第１方向に固定されている。第２磁化固定領域は磁化反転領域の第２境界に接続され磁化の向きが第２方向に固定されている。第１磁化固定領域とバイアス磁性層とがオーバーラップしている。
PCT/JP2008/071103 2007-12-18 2008-11-20 磁気ランダムアクセスメモリ、及び、磁気ランダムアクセスメモリの初期化方法 WO2009078244A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009546192A JP5360600B2 (ja) 2007-12-18 2008-11-20 磁気ランダムアクセスメモリ、及び、磁気ランダムアクセスメモリの初期化方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-326204 2007-12-18
JP2007326204 2007-12-18

Publications (1)

Publication Number Publication Date
WO2009078244A1 true WO2009078244A1 (ja) 2009-06-25

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JP (1) JP5360600B2 (ja)
WO (1) WO2009078244A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
JP2012204802A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 磁気記憶素子、磁気記憶装置、および磁気メモリ
JP5365813B2 (ja) * 2009-01-28 2013-12-11 日本電気株式会社 不揮発ロジック回路
US20180286917A1 (en) * 2017-03-28 2018-10-04 Semiconductor Manufacturing International (Shanghai) Corporation Device and method for disturbance free 3d mram fabrication
CN110268515A (zh) * 2018-01-12 2019-09-20 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
CN110797059A (zh) * 2018-08-02 2020-02-14 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
WO2021245768A1 (ja) * 2020-06-02 2021-12-09 Tdk株式会社 磁気抵抗効果素子及び磁気記録アレイ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
WO2005069368A1 (ja) * 2004-01-15 2005-07-28 Japan Science And Technology Agency 電流注入磁壁移動素子
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007103663A (ja) * 2005-10-04 2007-04-19 Toshiba Corp 磁気素子、記録再生素子、論理演算素子および論理演算器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
WO2005069368A1 (ja) * 2004-01-15 2005-07-28 Japan Science And Technology Agency 電流注入磁壁移動素子
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007103663A (ja) * 2005-10-04 2007-04-19 Toshiba Corp 磁気素子、記録再生素子、論理演算素子および論理演算器

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5365813B2 (ja) * 2009-01-28 2013-12-11 日本電気株式会社 不揮発ロジック回路
WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
JPWO2011052475A1 (ja) * 2009-10-26 2013-03-21 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
US8592930B2 (en) 2009-10-26 2013-11-26 Nec Corporation Magnetic memory element, magnetic memory and initializing method
JP2012204802A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 磁気記憶素子、磁気記憶装置、および磁気メモリ
US20180286917A1 (en) * 2017-03-28 2018-10-04 Semiconductor Manufacturing International (Shanghai) Corporation Device and method for disturbance free 3d mram fabrication
US11257863B2 (en) * 2017-03-28 2022-02-22 Semiconductor Manufacturing International (Shanghai) Corporation Device and method for disturbance free 3D MRAM fabrication
CN110268515A (zh) * 2018-01-12 2019-09-20 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
CN110268515B (zh) * 2018-01-12 2023-10-17 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
CN110797059A (zh) * 2018-08-02 2020-02-14 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
WO2021245768A1 (ja) * 2020-06-02 2021-12-09 Tdk株式会社 磁気抵抗効果素子及び磁気記録アレイ

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Publication number Publication date
JPWO2009078244A1 (ja) 2011-04-28
JP5360600B2 (ja) 2013-12-04

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