WO2009001706A1 - 磁気抵抗効果素子、および磁気ランダムアクセスメモリ - Google Patents

磁気抵抗効果素子、および磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2009001706A1
WO2009001706A1 PCT/JP2008/060993 JP2008060993W WO2009001706A1 WO 2009001706 A1 WO2009001706 A1 WO 2009001706A1 JP 2008060993 W JP2008060993 W JP 2008060993W WO 2009001706 A1 WO2009001706 A1 WO 2009001706A1
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WO
WIPO (PCT)
Prior art keywords
magnetization
free layer
layer
magnetization free
fixed
Prior art date
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PCT/JP2008/060993
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English (en)
French (fr)
Inventor
Shunsuke Fukami
Nobuyuki Ishiwata
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Nec Corporation
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Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009520475A priority Critical patent/JP5598697B2/ja
Priority to US12/665,773 priority patent/US8416611B2/en
Priority to CN2008800219223A priority patent/CN101689600B/zh
Publication of WO2009001706A1 publication Critical patent/WO2009001706A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　磁気抵抗効果素子が、磁化自由層と、磁化自由層に隣接して設けられるスペーサ層と、スペーサ層に隣接して磁化自由層とは反対側に設けられる第１の磁化固定層と、磁化自由層に隣接して設けられる少なくとも二つの第２の磁化固定層とを具備する。磁化自由層と第１の磁化固定層と第２の磁化固定層は、膜面に略垂直方向の磁化成分を有する。磁化自由層は、二つの磁化固定部と、二つの磁化固定部の間に配置される磁壁移動部とを有する。磁化自由層を構成する二つの磁化固定部の磁化は、膜面に略垂直方向において互いに略反平行に固定されている。磁壁移動部は、膜面垂直方向の磁気異方性が付与されている。
PCT/JP2008/060993 2007-06-25 2008-06-16 磁気抵抗効果素子、および磁気ランダムアクセスメモリ WO2009001706A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009520475A JP5598697B2 (ja) 2007-06-25 2008-06-16 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
US12/665,773 US8416611B2 (en) 2007-06-25 2008-06-16 Magnetoresistance effect element and magnetic random access memory
CN2008800219223A CN101689600B (zh) 2007-06-25 2008-06-16 磁阻效应元件及磁性随机存取存储器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-166079 2007-06-25
JP2007166079 2007-06-25

Publications (1)

Publication Number Publication Date
WO2009001706A1 true WO2009001706A1 (ja) 2008-12-31

Family

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Family Applications (1)

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PCT/JP2008/060993 WO2009001706A1 (ja) 2007-06-25 2008-06-16 磁気抵抗効果素子、および磁気ランダムアクセスメモリ

Country Status (4)

Country Link
US (1) US8416611B2 (ja)
JP (1) JP5598697B2 (ja)
CN (1) CN101689600B (ja)
WO (1) WO2009001706A1 (ja)

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WO2009133744A1 (ja) * 2008-04-28 2009-11-05 日本電気株式会社 磁気記憶素子、及び磁気メモリ
CN101770803A (zh) * 2009-01-06 2010-07-07 三星电子株式会社 磁结构、信息存储装置及其制造方法和操作方法
WO2010095589A1 (ja) * 2009-02-17 2010-08-26 日本電気株式会社 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ
JP2010219177A (ja) 2009-03-16 2010-09-30 Nec Corp 磁気トンネル接合素子、磁気ランダムアクセスメモリ
JP2010219104A (ja) * 2009-03-13 2010-09-30 Nec Corp 磁気メモリ素子、磁気メモリ、及びその製造方法
JP2010219156A (ja) * 2009-03-13 2010-09-30 Nec Corp 磁壁移動素子、及び、磁気ランダムアクセスメモリ
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WO2011078018A1 (ja) * 2009-12-24 2011-06-30 日本電気株式会社 磁気抵抗効果素子及びそれを用いた磁気ランダムアクセスメモリ
WO2011118395A1 (ja) * 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
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