WO2009060693A1 - デバイスおよびデバイス製造方法 - Google Patents
デバイスおよびデバイス製造方法 Download PDFInfo
- Publication number
- WO2009060693A1 WO2009060693A1 PCT/JP2008/068544 JP2008068544W WO2009060693A1 WO 2009060693 A1 WO2009060693 A1 WO 2009060693A1 JP 2008068544 W JP2008068544 W JP 2008068544W WO 2009060693 A1 WO2009060693 A1 WO 2009060693A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- intermediate layer
- main component
- functional intermediate
- bonding functional
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/83095—Temperature settings
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- H01L2224/838—Bonding techniques
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- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Joining Of Glass To Other Materials (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Ceramic Products (AREA)
- Formation Of Insulating Films (AREA)
- Laminated Bodies (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2704610A CA2704610C (en) | 2007-11-08 | 2008-10-14 | Device and device manufacture method |
US12/741,916 US20100276723A1 (en) | 2007-11-08 | 2008-10-14 | Device and device manufacture method |
EP08846882.2A EP2207195A4 (en) | 2007-11-08 | 2008-10-14 | DEVICE AND METHOD FOR MANUFACTURING THE DEVICE |
CN2008801145566A CN101849276B (zh) | 2007-11-08 | 2008-10-14 | 一种利用光的设备及其制造方法 |
KR1020107009745A KR101240063B1 (ko) | 2007-11-08 | 2008-10-14 | 디바이스 및 디바이스 제조 방법 |
US13/797,521 US8936998B2 (en) | 2007-11-08 | 2013-03-12 | Manufcaturing method for room-temperature substrate bonding |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-290922 | 2007-11-08 | ||
JP2007290922A JP4348454B2 (ja) | 2007-11-08 | 2007-11-08 | デバイスおよびデバイス製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/741,916 A-371-Of-International US20100276723A1 (en) | 2007-11-08 | 2008-10-14 | Device and device manufacture method |
US13/797,521 Division US8936998B2 (en) | 2007-11-08 | 2013-03-12 | Manufcaturing method for room-temperature substrate bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009060693A1 true WO2009060693A1 (ja) | 2009-05-14 |
Family
ID=40625594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/068544 WO2009060693A1 (ja) | 2007-11-08 | 2008-10-14 | デバイスおよびデバイス製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20100276723A1 (ja) |
EP (1) | EP2207195A4 (ja) |
JP (1) | JP4348454B2 (ja) |
KR (1) | KR101240063B1 (ja) |
CN (1) | CN101849276B (ja) |
CA (1) | CA2704610C (ja) |
TW (1) | TWI391316B (ja) |
WO (1) | WO2009060693A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107406292A (zh) * | 2014-10-31 | 2017-11-28 | 康宁股份有限公司 | 激光焊接的玻璃封装和制造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011027871A1 (ja) * | 2009-09-04 | 2011-03-10 | 住友化学株式会社 | 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法 |
JP6122297B2 (ja) * | 2011-01-31 | 2017-04-26 | 須賀 唯知 | 接合基板作成方法、基板接合方法、及び接合基板作成装置 |
CN103548129B (zh) * | 2011-08-30 | 2017-05-10 | Ev 集团 E·索尔纳有限责任公司 | 通过借助固体扩散或相变的结合层永久粘合晶片的方法 |
CN102693996B (zh) * | 2012-06-20 | 2015-03-11 | 中国科学院上海高等研究院 | 图像传感器 |
JPWO2014129433A1 (ja) * | 2013-02-19 | 2017-02-02 | 日本碍子株式会社 | 複合基板及び半導体デバイスの製法 |
JP2015064321A (ja) | 2013-09-26 | 2015-04-09 | キヤノン株式会社 | 流路デバイス |
CN103692119A (zh) * | 2013-12-17 | 2014-04-02 | 南京理工大学 | 基于视觉传感的电子束深熔焊熔池动态监测装置 |
CH711295B1 (fr) * | 2015-07-06 | 2019-11-29 | Cartier Int Ag | Procédé de fixation par assemblage anodique. |
WO2017163729A1 (ja) * | 2016-03-25 | 2017-09-28 | 日本碍子株式会社 | 接合体および弾性波素子 |
TWI780103B (zh) * | 2017-05-02 | 2022-10-11 | 日商日本碍子股份有限公司 | 彈性波元件及其製造方法 |
JP7287772B2 (ja) * | 2018-11-26 | 2023-06-06 | ランテクニカルサービス株式会社 | 透明基板の接合方法及び積層体 |
JP7222493B2 (ja) * | 2021-04-28 | 2023-02-15 | 日本電産マシンツール株式会社 | 半導体装置の製造方法、及び常温接合装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63101085A (ja) * | 1986-10-16 | 1988-05-06 | Fuji Electric Co Ltd | 拡散接合方法 |
JPH10200079A (ja) * | 1996-11-15 | 1998-07-31 | Canon Inc | 半導体部材の製造方法および半導体部材 |
JP2004054170A (ja) | 2002-07-24 | 2004-02-19 | Japan Atom Energy Res Inst | イオンビームエッチングを用いたレーザー光学結晶の接合法 |
JP2004343359A (ja) | 2003-05-14 | 2004-12-02 | Fujitsu Media Device Kk | 弾性表面波素子の製造方法 |
JP2004337927A (ja) | 2003-05-15 | 2004-12-02 | Tadatomo Suga | 基板接合方法および基板接合装置 |
JP2005104810A (ja) | 2003-10-02 | 2005-04-21 | Hitachi Metals Ltd | 異種材料複合体およびその製造方法 |
JP2007042750A (ja) * | 2005-08-01 | 2007-02-15 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US5427638A (en) * | 1992-06-04 | 1995-06-27 | Alliedsignal Inc. | Low temperature reaction bonding |
JP3415183B2 (ja) * | 1992-11-27 | 2003-06-09 | オリンパス光学工業株式会社 | 光学素子接合体の製造方法および光学素子接合体 |
JP3266041B2 (ja) * | 1996-05-22 | 2002-03-18 | 株式会社島津製作所 | 部材接合法及びこの方法により製造した光学測定装置 |
CA2220600C (en) * | 1996-11-15 | 2002-02-12 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
US6054363A (en) * | 1996-11-15 | 2000-04-25 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
JP3862867B2 (ja) * | 1998-08-07 | 2006-12-27 | 信越化学工業株式会社 | 光アイソレータとその製造方法 |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US6639249B2 (en) * | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6822326B2 (en) * | 2002-09-25 | 2004-11-23 | Ziptronix | Wafer bonding hermetic encapsulation |
TWI227550B (en) * | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
US7109092B2 (en) * | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
JP2005070682A (ja) * | 2003-08-27 | 2005-03-17 | Kyocera Corp | 光学デバイスおよびその製造方法 |
US7115182B2 (en) * | 2004-06-15 | 2006-10-03 | Agency For Science, Technology And Research | Anodic bonding process for ceramics |
US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
CN105603425A (zh) * | 2016-01-25 | 2016-05-25 | 熙腾电子科技(上海)有限公司 | 铜选择性蚀刻液和钛选择性蚀刻液 |
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2007
- 2007-11-08 JP JP2007290922A patent/JP4348454B2/ja active Active
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2008
- 2008-10-14 EP EP08846882.2A patent/EP2207195A4/en not_active Withdrawn
- 2008-10-14 CN CN2008801145566A patent/CN101849276B/zh active Active
- 2008-10-14 WO PCT/JP2008/068544 patent/WO2009060693A1/ja active Application Filing
- 2008-10-14 US US12/741,916 patent/US20100276723A1/en not_active Abandoned
- 2008-10-14 KR KR1020107009745A patent/KR101240063B1/ko active IP Right Grant
- 2008-10-14 CA CA2704610A patent/CA2704610C/en not_active Expired - Fee Related
- 2008-10-15 TW TW097139604A patent/TWI391316B/zh active
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2013
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CN107406292A (zh) * | 2014-10-31 | 2017-11-28 | 康宁股份有限公司 | 激光焊接的玻璃封装和制造方法 |
Also Published As
Publication number | Publication date |
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US20130213561A1 (en) | 2013-08-22 |
KR20100082000A (ko) | 2010-07-15 |
CN101849276B (zh) | 2012-07-18 |
US20100276723A1 (en) | 2010-11-04 |
JP2009117707A (ja) | 2009-05-28 |
TWI391316B (zh) | 2013-04-01 |
CA2704610C (en) | 2015-12-15 |
KR101240063B1 (ko) | 2013-03-06 |
EP2207195A4 (en) | 2015-11-18 |
CN101849276A (zh) | 2010-09-29 |
US8936998B2 (en) | 2015-01-20 |
EP2207195A1 (en) | 2010-07-14 |
TW200927636A (en) | 2009-07-01 |
CA2704610A1 (en) | 2009-05-14 |
JP4348454B2 (ja) | 2009-10-21 |
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