WO2009060495A1 - Semiconductor memory device and method for controlling the same - Google Patents

Semiconductor memory device and method for controlling the same Download PDF

Info

Publication number
WO2009060495A1
WO2009060495A1 PCT/JP2007/001208 JP2007001208W WO2009060495A1 WO 2009060495 A1 WO2009060495 A1 WO 2009060495A1 JP 2007001208 W JP2007001208 W JP 2007001208W WO 2009060495 A1 WO2009060495 A1 WO 2009060495A1
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
semiconductor memory
address
input
command
Prior art date
Application number
PCT/JP2007/001208
Other languages
French (fr)
Japanese (ja)
Inventor
Masahiro Ise
Osamu Ishibashi
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to CN200780101257.4A priority Critical patent/CN101836261A/en
Priority to PCT/JP2007/001208 priority patent/WO2009060495A1/en
Priority to KR1020107008844A priority patent/KR20100068469A/en
Priority to JP2009539881A priority patent/JP4985781B2/en
Publication of WO2009060495A1 publication Critical patent/WO2009060495A1/en
Priority to US12/766,408 priority patent/US8924671B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Communication Control (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

When an address indicating an access destination of a data storage section and a command indicating processing contents to the address are input into a semiconductor memory device, an information holding section outputs the block information corresponding to the input address. The semiconductor memory device determines whether or not the command is executed to the address in accordance with the output block information and the input command.
PCT/JP2007/001208 2007-11-05 2007-11-05 Semiconductor memory device and method for controlling the same WO2009060495A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200780101257.4A CN101836261A (en) 2007-11-05 2007-11-05 Semiconductor memory device and method for controlling the same
PCT/JP2007/001208 WO2009060495A1 (en) 2007-11-05 2007-11-05 Semiconductor memory device and method for controlling the same
KR1020107008844A KR20100068469A (en) 2007-11-05 2007-11-05 Semiconductor memory device and method for controlling the same
JP2009539881A JP4985781B2 (en) 2007-11-05 2007-11-05 Semiconductor memory device and control method thereof
US12/766,408 US8924671B2 (en) 2007-11-05 2010-04-23 Semiconductor storage device and control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/001208 WO2009060495A1 (en) 2007-11-05 2007-11-05 Semiconductor memory device and method for controlling the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/766,408 Continuation US8924671B2 (en) 2007-11-05 2010-04-23 Semiconductor storage device and control method thereof

Publications (1)

Publication Number Publication Date
WO2009060495A1 true WO2009060495A1 (en) 2009-05-14

Family

ID=40625410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/001208 WO2009060495A1 (en) 2007-11-05 2007-11-05 Semiconductor memory device and method for controlling the same

Country Status (5)

Country Link
US (1) US8924671B2 (en)
JP (1) JP4985781B2 (en)
KR (1) KR20100068469A (en)
CN (1) CN101836261A (en)
WO (1) WO2009060495A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176627A (en) * 2014-03-17 2015-10-05 株式会社東芝 semiconductor memory device
US12019880B2 (en) * 2021-09-29 2024-06-25 Qualcomm Incorporated Flash memory data protection using bad block markers and a flashing tool

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04351800A (en) * 1991-05-29 1992-12-07 Mitsubishi Electric Corp Semiconductor storage device with error self-correcting function
JPH1165941A (en) * 1997-08-11 1999-03-09 Sony Corp Storage device
JP2003085509A (en) * 2001-09-13 2003-03-20 Hitachi Ltd Memory card and method for rewriting data

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
JPS6359618A (en) * 1986-07-31 1988-03-15 Pfu Ltd Semiconductor ram control system
DE69024086T2 (en) * 1989-04-13 1996-06-20 Sundisk Corp EEprom system with block deletion
JP3112018B2 (en) * 1989-09-20 2000-11-27 株式会社日立製作所 Semiconductor storage device having redundant memory
JPH071654B2 (en) 1989-09-26 1995-01-11 日本碍子株式会社 Lightning protection horn insulator device
JPH054697A (en) 1991-06-20 1993-01-14 Tokico Ltd Oil supply apparatus
JP3154892B2 (en) 1994-05-10 2001-04-09 株式会社東芝 IC memory card and inspection method of the IC memory card
JP3263259B2 (en) 1994-10-04 2002-03-04 株式会社東芝 Semiconductor storage device
WO1997000518A1 (en) * 1995-06-14 1997-01-03 Hitachi, Ltd. Semiconductor memory, memory device, and memory card
JPH11345174A (en) * 1998-03-09 1999-12-14 Mitsubishi Electric Corp Semiconductor disk device and method for preparing logical and physical address translation table
JP4413306B2 (en) 1999-03-23 2010-02-10 株式会社東芝 Semiconductor memory device
JP3893005B2 (en) 2000-01-06 2007-03-14 富士通株式会社 Nonvolatile semiconductor memory device
JP4387547B2 (en) 2000-03-27 2009-12-16 株式会社東芝 Nonvolatile semiconductor memory
US6772274B1 (en) * 2000-09-13 2004-08-03 Lexar Media, Inc. Flash memory system and method implementing LBA to PBA correlation within flash memory array
JP2003316649A (en) * 2002-04-26 2003-11-07 Mitsubishi Electric Corp Microprocessor
CN1689116A (en) * 2003-02-28 2005-10-26 富士通株式会社 Flash memory and memory control method
KR100781976B1 (en) 2006-11-02 2007-12-06 삼성전자주식회사 Method for serving block status information for use in semiconductor memory device having flash memory
US7675776B2 (en) * 2007-12-21 2010-03-09 Spansion, Llc Bit map control of erase block defect list in a memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04351800A (en) * 1991-05-29 1992-12-07 Mitsubishi Electric Corp Semiconductor storage device with error self-correcting function
JPH1165941A (en) * 1997-08-11 1999-03-09 Sony Corp Storage device
JP2003085509A (en) * 2001-09-13 2003-03-20 Hitachi Ltd Memory card and method for rewriting data

Also Published As

Publication number Publication date
US20100205394A1 (en) 2010-08-12
CN101836261A (en) 2010-09-15
JP4985781B2 (en) 2012-07-25
KR20100068469A (en) 2010-06-23
US8924671B2 (en) 2014-12-30
JPWO2009060495A1 (en) 2011-03-17

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