WO2009057988A3 - Radio frequency mems switch - Google Patents
Radio frequency mems switch Download PDFInfo
- Publication number
- WO2009057988A3 WO2009057988A3 PCT/MY2008/000122 MY2008000122W WO2009057988A3 WO 2009057988 A3 WO2009057988 A3 WO 2009057988A3 MY 2008000122 W MY2008000122 W MY 2008000122W WO 2009057988 A3 WO2009057988 A3 WO 2009057988A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mems switch
- radio frequency
- switch
- mems
- disclosed
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
There is disclosed a method of fabricating radio frequency surface microelectromechanical (MEMS) switch. The method utilizes four masks, each configured through photolithography process at different stages that resulted in substantially planar silicon dioxide, critical in providing better mechanical performance of the RF MEMS switch. The steps include, among others, depositing silicon on glass liquid to fill small holes for a smooth silicon oxide surface, employing back etch process and performing wet etching by using chemical solution called Pad Etch. An RF MEMS switch that comprise of a lower electrode (30) formed on the surface of a silicon substrate (31), an aluminum membrane (32) suspended over the electrode and a dielectric layer (33) covering the lower electrode fabricated through the process is also disclosed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI20071873 | 2007-10-31 | ||
| MYPI20071873A MY146154A (en) | 2007-10-31 | 2007-10-31 | Radio frequency mems switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2009057988A2 WO2009057988A2 (en) | 2009-05-07 |
| WO2009057988A3 true WO2009057988A3 (en) | 2009-07-16 |
Family
ID=40591676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/MY2008/000122 WO2009057988A2 (en) | 2007-10-31 | 2008-10-22 | Radio frequency mems switch |
Country Status (2)
| Country | Link |
|---|---|
| MY (1) | MY146154A (en) |
| WO (1) | WO2009057988A2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205942B (en) * | 2011-05-13 | 2015-11-04 | 上海集成电路研发中心有限公司 | MEMS sacrificial layer structure making process |
| EP2725595A1 (en) | 2012-10-25 | 2014-04-30 | Delfmems | MEMS fixed capacitor comprising a gas-containing gap and process for manufacturing said capacitor |
| CN103345057B (en) * | 2013-05-31 | 2016-06-01 | 华中科技大学 | A kind of miniature bridge architecture and its preparation method |
| CN113670994A (en) * | 2021-08-26 | 2021-11-19 | 南京高华科技股份有限公司 | MEMS humidity sensor based on phase detection principle and preparation method thereof |
| CN117097361B (en) * | 2023-07-20 | 2024-04-30 | 湖北九峰山实验室 | Device integrating multi-band antenna and radio frequency switch and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621387B1 (en) * | 2001-02-23 | 2003-09-16 | Analatom Incorporated | Micro-electro-mechanical systems switch |
| KR20040048026A (en) * | 2002-12-02 | 2004-06-07 | 삼성전자주식회사 | Stiction free RF MEMS switch and method thereof |
| KR20050068584A (en) * | 2003-12-30 | 2005-07-05 | 매그나칩 반도체 유한회사 | Method of switch in radio frequency integrated circuits |
| US7265647B2 (en) * | 2004-03-12 | 2007-09-04 | The Regents Of The University Of California | High isolation tunable MEMS capacitive switch |
-
2007
- 2007-10-31 MY MYPI20071873A patent/MY146154A/en unknown
-
2008
- 2008-10-22 WO PCT/MY2008/000122 patent/WO2009057988A2/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621387B1 (en) * | 2001-02-23 | 2003-09-16 | Analatom Incorporated | Micro-electro-mechanical systems switch |
| KR20040048026A (en) * | 2002-12-02 | 2004-06-07 | 삼성전자주식회사 | Stiction free RF MEMS switch and method thereof |
| KR20050068584A (en) * | 2003-12-30 | 2005-07-05 | 매그나칩 반도체 유한회사 | Method of switch in radio frequency integrated circuits |
| US7265647B2 (en) * | 2004-03-12 | 2007-09-04 | The Regents Of The University Of California | High isolation tunable MEMS capacitive switch |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009057988A2 (en) | 2009-05-07 |
| MY146154A (en) | 2012-06-29 |
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