WO2009052814A3 - Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same - Google Patents

Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same Download PDF

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Publication number
WO2009052814A3
WO2009052814A3 PCT/DE2008/001770 DE2008001770W WO2009052814A3 WO 2009052814 A3 WO2009052814 A3 WO 2009052814A3 DE 2008001770 W DE2008001770 W DE 2008001770W WO 2009052814 A3 WO2009052814 A3 WO 2009052814A3
Authority
WO
WIPO (PCT)
Prior art keywords
cooling
semiconductor
cooling device
producing
same
Prior art date
Application number
PCT/DE2008/001770
Other languages
German (de)
French (fr)
Other versions
WO2009052814A2 (en
Inventor
Dirk Lorenzen
Original Assignee
Dirk Lorenzen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dirk Lorenzen filed Critical Dirk Lorenzen
Publication of WO2009052814A2 publication Critical patent/WO2009052814A2/en
Publication of WO2009052814A3 publication Critical patent/WO2009052814A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Abstract

The invention relates to a cooling device for semiconductor elements. The aim of the invention is to increase the effectiveness of the corrosion proofing and to increase the service life of the cooling device by reducing the corrodibility of the cooling channels while safeguarding the reliability of the device in relation to the semiconductor element. The invention is characterized in that a cooling channel structure which is interspaced from the assembly surface for the semiconductor element has cooling ribs that are integrally bonded to the heat-conducting zone and that mainly contain tantalum and/or niobium in at least one core zone.
PCT/DE2008/001770 2007-10-26 2008-10-26 Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same WO2009052814A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007051796.5 2007-10-26
DE200710051796 DE102007051796A1 (en) 2007-10-26 2007-10-26 Cooling device for semiconductor devices

Publications (2)

Publication Number Publication Date
WO2009052814A2 WO2009052814A2 (en) 2009-04-30
WO2009052814A3 true WO2009052814A3 (en) 2009-09-24

Family

ID=40404819

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001770 WO2009052814A2 (en) 2007-10-26 2008-10-26 Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same

Country Status (2)

Country Link
DE (1) DE102007051796A1 (en)
WO (1) WO2009052814A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009034082A1 (en) * 2009-07-21 2011-01-27 Osram Gesellschaft mit beschränkter Haftung Optoelectronic assembly and method for producing such a unit
US8945749B2 (en) * 2011-12-15 2015-02-03 GM Global Technology Operations LLC Carbon fiber thermal interface for cooling module assembly
CN103887703B (en) * 2014-03-27 2017-01-04 北京牡丹电子集团有限责任公司 A kind of method making semiconductor laser thermal sediment
DE102015013511B3 (en) 2015-10-15 2017-03-16 Jenoptik Laser Gmbh Laser radiation source and method for producing a laser radiation source and use of a soldering process
DE102016218522B3 (en) 2016-09-27 2017-06-22 Jenoptik Laser Gmbh Optical or optoelectronic assembly and method of making the same
CN112382921A (en) * 2020-10-22 2021-02-19 山东大学 Heat sink capable of improving heat conduction efficiency of semiconductor laser chip and preparation method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452798B1 (en) * 2001-09-12 2002-09-17 Harris Corporation Electronic module including a cooling substrate having a fluid cooling circuit therein and related methods
JP2003273441A (en) * 2002-03-15 2003-09-26 Hamamatsu Photonics Kk Heat sink, and semiconductor laser device and semiconductor laser stack device using it
EP1622198A2 (en) * 2004-07-28 2006-02-01 Brother Kogyo Kabushiki Kaisha Substrate mounted with electronic element thereon and liquid ejection head including the substrate
DE112004000204T5 (en) * 2003-01-31 2006-06-01 Cooligy, Inc., Mountain View Method and device for the production of low-cost electrokinetic pumps
US20070017658A1 (en) * 2005-07-19 2007-01-25 International Business Machines Corporation Cold plate apparatus and method of fabrication thereof with a controlled heat transfer characteristic between a metallurgically bonded tube and heat sink for facilitating cooling of an electronics component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3243713C2 (en) * 1982-11-26 1985-05-15 Fr. Kammerer GmbH, 7530 Pforzheim Flat heat exchanger plate and process for their manufacture
DE10011568C1 (en) * 2000-03-09 2001-06-13 Gea Canzler Gmbh Heat exchanger element; has at least two welded plates of reactive transition metal with flow channels formed between plates for heat exchange medium, and joined by electron beam welding under vacuum
CN1392219A (en) * 2001-06-15 2003-01-22 独立行政法人产业技术综合研究所 High heat conductivity composite material and its preparing method
US6988534B2 (en) * 2002-11-01 2006-01-24 Cooligy, Inc. Method and apparatus for flexible fluid delivery for cooling desired hot spots in a heat producing device
JP2006511098A (en) * 2002-10-11 2006-03-30 チエン−ミン・ソン Carbonaceous heat spreader and related methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452798B1 (en) * 2001-09-12 2002-09-17 Harris Corporation Electronic module including a cooling substrate having a fluid cooling circuit therein and related methods
JP2003273441A (en) * 2002-03-15 2003-09-26 Hamamatsu Photonics Kk Heat sink, and semiconductor laser device and semiconductor laser stack device using it
DE112004000204T5 (en) * 2003-01-31 2006-06-01 Cooligy, Inc., Mountain View Method and device for the production of low-cost electrokinetic pumps
EP1622198A2 (en) * 2004-07-28 2006-02-01 Brother Kogyo Kabushiki Kaisha Substrate mounted with electronic element thereon and liquid ejection head including the substrate
US20070017658A1 (en) * 2005-07-19 2007-01-25 International Business Machines Corporation Cold plate apparatus and method of fabrication thereof with a controlled heat transfer characteristic between a metallurgically bonded tube and heat sink for facilitating cooling of an electronics component

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
ASSELIN, E., TWAFIK, M. A., ALFANTAZI, A.: "Corrosion fo niobium in sulphuric and hydrochloric acid solutions at 75 and 95 °C", CORROSION SCIENCE, vol. 49, February 2007 (2007-02-01), pages 694 - 710, XP002531832 *
COX, F. G.: "CORROSION RESISTANCE OF TANTALUM: Applications in the Chemical Industry", ANTI-CORROSION METHODS AND MATERIALS, vol. 7, no. 3, March 1960 (1960-03-01), MCB UP Ltd, XP008107135 *
GYPEN, L. A., BRABERS, M., DERUYETTERE, A.: "Corrosion resistance of tantalum base alloys", MATERIALS AND CORROSION - WERKSTOFFE UND KORROSION, vol. 35, no. 2, February 1984 (1984-02-01), Weinheim, pages 37 - 46, XP002531833 *
KENNETH E GOODSON ET AL: "Improved Heat Sinking for Laser-Diode Arrays Using Microchannels in CVD Diamond", IEEE TRANSACTIONS ON COMPONENTS, PACKAGING ANDMANUFACTURING TECHNOLOGY. PART B: ADVANCED PACKAGING, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 20, no. 1, 1 February 1997 (1997-02-01), XP011002011, ISSN: 1070-9894 *
KIEFFER, R., BACH, H., STEMPKOWSKI, I.: "Korrosionsuntersuchungen an Niob-Tantal-Legierungen", MATERIALS AND CORROSION - WERKSTOFFE UND KORROSION, vol. 18, no. 9, September 1967 (1967-09-01), Weinheim, pages 782 - 784, XP002531834 *
MISSAGGIA L J ET AL: "MICROCHANNEL HEAT SINKS FOR TWO-DIMENSIONAL HIGH-POWER-DENSITY DIODE LASER ARRAYS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 25, no. 9, 1 September 1989 (1989-09-01), pages 1988 - 1992, XP000080380, ISSN: 0018-9197 *
STANSBURY, E. E., BUCHANAN, R. A.: "Fundamentals of electrochemical corrosion", 2000, ASM INTERNATIONAL, MATERIALS PARK, OHIO, XP008107234 *
TUCKERMAN D B ET AL: "HIGH-PERFORMANCE HEAT SINKING FOR VLSI", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 2, no. 5, 1 May 1981 (1981-05-01), pages 126 - 129, XP000561974, ISSN: 0741-3106 *

Also Published As

Publication number Publication date
DE102007051796A1 (en) 2009-05-07
WO2009052814A2 (en) 2009-04-30

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