WO2009050861A1 - Nonvolatile memory element and its fabrication method, and nonvolatile semiconductor device using the nonvolatile memory element - Google Patents

Nonvolatile memory element and its fabrication method, and nonvolatile semiconductor device using the nonvolatile memory element Download PDF

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Publication number
WO2009050861A1
WO2009050861A1 PCT/JP2008/002838 JP2008002838W WO2009050861A1 WO 2009050861 A1 WO2009050861 A1 WO 2009050861A1 JP 2008002838 W JP2008002838 W JP 2008002838W WO 2009050861 A1 WO2009050861 A1 WO 2009050861A1
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WO
WIPO (PCT)
Prior art keywords
electrode
memory element
nonvolatile memory
voltage pulse
nonvolatile
Prior art date
Application number
PCT/JP2008/002838
Other languages
French (fr)
Japanese (ja)
Inventor
Satoru Mitani
Satoru Fujii
Takeshi Takagi
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2009050861A1 publication Critical patent/WO2009050861A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance change layer (104) interposed between the first electrode (103) and the second electrode (105) and reversibly changing in resistance value according to an electrical signal applied between both the electrodes (103) and (105). The resistance change layer (104) includes an oxygen-deficient hafnium oxide. The resistance value between the first electrode (103) and the second electrode (105) is increased by applying, as an electrical signal, a first polarity voltage pulse between the first electrode (103) and the second electrode (105) and is decreased by applying, as the electrical signal, a second polarity voltage pulse between the first electrode (103) and the second electrode (105). The first and second polarities have mutually opposite polarities and the absolute voltage value of the first polarity voltage pulse is greater than that of the second polarity voltage pulse.
PCT/JP2008/002838 2007-10-15 2008-10-08 Nonvolatile memory element and its fabrication method, and nonvolatile semiconductor device using the nonvolatile memory element WO2009050861A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007267584A JP2010287582A (en) 2007-10-15 2007-10-15 Nonvolatile storage element and method of manufacturing the same, and nonvolatile semiconductor device using the nonvolatile storage element
JP2007-267584 2007-10-15

Publications (1)

Publication Number Publication Date
WO2009050861A1 true WO2009050861A1 (en) 2009-04-23

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PCT/JP2008/002838 WO2009050861A1 (en) 2007-10-15 2008-10-08 Nonvolatile memory element and its fabrication method, and nonvolatile semiconductor device using the nonvolatile memory element

Country Status (2)

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JP (1) JP2010287582A (en)
WO (1) WO2009050861A1 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
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WO2009136467A1 (en) * 2008-05-08 2009-11-12 パナソニック株式会社 Nonvolatile storage element, nonvolatile storage device, and method for writing data into nonvolatile storage element
WO2010021134A1 (en) * 2008-08-20 2010-02-25 パナソニック株式会社 Variable resistance nonvolatile memory device and memory cell formation method
JP2011040579A (en) * 2009-08-11 2011-02-24 Toshiba Corp Resistance-change memory
WO2011052239A1 (en) * 2009-11-02 2011-05-05 パナソニック株式会社 Variable resistance non-volatile memory device, and method of forming memory cell
WO2011089682A1 (en) * 2010-01-25 2011-07-28 パナソニック株式会社 Method for manufacturing non-volatile semiconductor storage element and method for manufacturing non-volatile semiconductor storage device
JP2011160370A (en) * 2010-02-04 2011-08-18 Rohm Co Ltd Programmable logic device, and electronic device using the same
US8227788B2 (en) 2008-11-19 2012-07-24 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8592798B2 (en) 2010-04-21 2013-11-26 Panasonic Corporation Non-volatile storage device and method for manufacturing the same
US8785238B2 (en) 2010-07-01 2014-07-22 Panasonic Corporation Nonvolatile memory element and method for manufacturing same
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US9105332B2 (en) 2012-03-15 2015-08-11 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory device

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US8129704B2 (en) * 2008-05-01 2012-03-06 Intermolecular, Inc. Non-volatile resistive-switching memories
TWI476973B (en) * 2014-03-25 2015-03-11 Winbond Electronics Corp Structure and formation method of memory device
US20220393563A1 (en) * 2019-11-01 2022-12-08 Japan Science And Technology Agency Current sensor and power conversion circuit

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JP2007088349A (en) * 2005-09-26 2007-04-05 Fujitsu Ltd Non-volatile semiconductor memory and its writing method
JP2007109875A (en) * 2005-10-13 2007-04-26 Matsushita Electric Ind Co Ltd Memory element, memory device, and semiconductor integrated circuit
JP2007184419A (en) * 2006-01-06 2007-07-19 Sharp Corp Nonvolatile memory device
JP2007220768A (en) * 2006-02-15 2007-08-30 Matsushita Electric Ind Co Ltd Nonvolatile memory element and method of manufacturing same
JP2008205191A (en) * 2007-02-20 2008-09-04 Toshiba Corp Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device

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JP2006173267A (en) * 2004-12-14 2006-06-29 Sony Corp Storage element and storage device
JP2006279042A (en) * 2005-03-28 2006-10-12 Samsung Electronics Co Ltd Resistive memory cell, method of forming the same, and resistive memory arrangement using the method
JP2007088349A (en) * 2005-09-26 2007-04-05 Fujitsu Ltd Non-volatile semiconductor memory and its writing method
JP2007109875A (en) * 2005-10-13 2007-04-26 Matsushita Electric Ind Co Ltd Memory element, memory device, and semiconductor integrated circuit
JP2007184419A (en) * 2006-01-06 2007-07-19 Sharp Corp Nonvolatile memory device
JP2007220768A (en) * 2006-02-15 2007-08-30 Matsushita Electric Ind Co Ltd Nonvolatile memory element and method of manufacturing same
JP2008205191A (en) * 2007-02-20 2008-09-04 Toshiba Corp Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136467A1 (en) * 2008-05-08 2009-11-12 パナソニック株式会社 Nonvolatile storage element, nonvolatile storage device, and method for writing data into nonvolatile storage element
JPWO2009136467A1 (en) * 2008-05-08 2011-09-01 パナソニック株式会社 Nonvolatile memory element, nonvolatile memory device, and data writing method to nonvolatile memory element
JP4469022B2 (en) * 2008-05-08 2010-05-26 パナソニック株式会社 Nonvolatile memory element, nonvolatile memory device, and data writing method to nonvolatile memory element
US8830730B2 (en) 2008-08-20 2014-09-09 Panasonic Corporation Variable resistance nonvolatile storage device and method of forming memory cell
JP4555397B2 (en) * 2008-08-20 2010-09-29 パナソニック株式会社 Variable resistance nonvolatile memory device
WO2010021134A1 (en) * 2008-08-20 2010-02-25 パナソニック株式会社 Variable resistance nonvolatile memory device and memory cell formation method
JPWO2010021134A1 (en) * 2008-08-20 2012-01-26 パナソニック株式会社 Variable resistance nonvolatile memory device
US8553444B2 (en) 2008-08-20 2013-10-08 Panasonic Corporation Variable resistance nonvolatile storage device and method of forming memory cell
US8399875B1 (en) 2008-11-19 2013-03-19 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
US8227788B2 (en) 2008-11-19 2012-07-24 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
JP2011040579A (en) * 2009-08-11 2011-02-24 Toshiba Corp Resistance-change memory
WO2011052239A1 (en) * 2009-11-02 2011-05-05 パナソニック株式会社 Variable resistance non-volatile memory device, and method of forming memory cell
CN102414819A (en) * 2009-11-02 2012-04-11 松下电器产业株式会社 Variable resistance non-volatile memory device, and method of forming memory cell
JP5406314B2 (en) * 2010-01-25 2014-02-05 パナソニック株式会社 Method for manufacturing nonvolatile semiconductor memory element and method for manufacturing nonvolatile semiconductor memory device
WO2011089682A1 (en) * 2010-01-25 2011-07-28 パナソニック株式会社 Method for manufacturing non-volatile semiconductor storage element and method for manufacturing non-volatile semiconductor storage device
US8450182B2 (en) 2010-01-25 2013-05-28 Panasonic Corporation Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device
JP2011160370A (en) * 2010-02-04 2011-08-18 Rohm Co Ltd Programmable logic device, and electronic device using the same
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8772749B2 (en) 2010-03-16 2014-07-08 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8592798B2 (en) 2010-04-21 2013-11-26 Panasonic Corporation Non-volatile storage device and method for manufacturing the same
US8785238B2 (en) 2010-07-01 2014-07-22 Panasonic Corporation Nonvolatile memory element and method for manufacturing same
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US8969845B2 (en) 2010-10-14 2015-03-03 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8981331B2 (en) 2010-10-14 2015-03-17 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US9105576B2 (en) 2010-10-14 2015-08-11 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US9105332B2 (en) 2012-03-15 2015-08-11 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory device

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