WO2009045102A3 - An electronic circuit element with profiled photopatternable dielectric layer - Google Patents

An electronic circuit element with profiled photopatternable dielectric layer Download PDF

Info

Publication number
WO2009045102A3
WO2009045102A3 PCT/NL2008/050630 NL2008050630W WO2009045102A3 WO 2009045102 A3 WO2009045102 A3 WO 2009045102A3 NL 2008050630 W NL2008050630 W NL 2008050630W WO 2009045102 A3 WO2009045102 A3 WO 2009045102A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronic component
thickness
circuit element
electronic circuit
profiled
Prior art date
Application number
PCT/NL2008/050630
Other languages
French (fr)
Other versions
WO2009045102A2 (en
Inventor
Aerle Nicolaas Aldegonda Jan Maria Van
Joris Pieter Valentijn Maas
Original Assignee
Polymer Vision Ltd
Aerle Nicolaas Aldegonda Jan Maria Van
Joris Pieter Valentijn Maas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polymer Vision Ltd, Aerle Nicolaas Aldegonda Jan Maria Van, Joris Pieter Valentijn Maas filed Critical Polymer Vision Ltd
Publication of WO2009045102A2 publication Critical patent/WO2009045102A2/en
Publication of WO2009045102A3 publication Critical patent/WO2009045102A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

An electronic circuit element is disclosed comprising: a first electronic component and a second electronic component, said first electronic component and said second electronic component being arranged to share a first electrically conducting layer, a second electrically conducting layer; and, an electrically insulating layer spatially arranged between the first electrically conducting layer and a second electrically conducting layer, wherein the electrically insulating layer comprises a photopatternable material having a first thickness in a region covered by the first electronic component and a second thickness in a region covered by the second electronic component. The resulting structure 40 may comprise a plurality of areas 42 of a first thickness an area 41 of a second thickness and optionally a plurality of areas 43 with zero thickness.
PCT/NL2008/050630 2007-10-02 2008-10-02 An electronic circuit element with profiled photopatternable dielectric layer WO2009045102A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97700307P 2007-10-02 2007-10-02
US60/977,003 2007-10-02

Publications (2)

Publication Number Publication Date
WO2009045102A2 WO2009045102A2 (en) 2009-04-09
WO2009045102A3 true WO2009045102A3 (en) 2009-06-18

Family

ID=40362122

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2008/050630 WO2009045102A2 (en) 2007-10-02 2008-10-02 An electronic circuit element with profiled photopatternable dielectric layer

Country Status (2)

Country Link
TW (1) TW200924107A (en)
WO (1) WO2009045102A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9468750B2 (en) * 2006-11-09 2016-10-18 Greatbatch Ltd. Multilayer planar spiral inductor filter for medical therapeutic or diagnostic applications

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040232421A1 (en) * 2000-05-12 2004-11-25 Hitachi, Ltd. Liquid crystal display device and fabrication method thereof
US20050092992A1 (en) * 2000-03-07 2005-05-05 Sharp Kabushiki Kaisha Image sensor and method of manufacturing the same
US20050270434A1 (en) * 2004-06-05 2005-12-08 Jung Tae Y Liquid crystal display device and fabricating method thereof
US20060054894A1 (en) * 2004-09-16 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of the same
US20060220014A1 (en) * 2005-03-15 2006-10-05 Nec Corporation Liquid crystal display device and manufacturing method therefor
US20070004070A1 (en) * 2005-06-30 2007-01-04 Lg.Philips Lcd Co., Ltd. Array substrate for liquid crystal display and method for fabricating the same
WO2007004130A2 (en) * 2005-06-30 2007-01-11 Polymer Vision Limited Pixel perfromance improvement by use of a field-shield
EP1912095A1 (en) * 2006-10-12 2008-04-16 Samsung Electronics Co., Ltd. Display panel manufacture

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050092992A1 (en) * 2000-03-07 2005-05-05 Sharp Kabushiki Kaisha Image sensor and method of manufacturing the same
US20040232421A1 (en) * 2000-05-12 2004-11-25 Hitachi, Ltd. Liquid crystal display device and fabrication method thereof
US20050270434A1 (en) * 2004-06-05 2005-12-08 Jung Tae Y Liquid crystal display device and fabricating method thereof
US20060054894A1 (en) * 2004-09-16 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of the same
US20060220014A1 (en) * 2005-03-15 2006-10-05 Nec Corporation Liquid crystal display device and manufacturing method therefor
US20070004070A1 (en) * 2005-06-30 2007-01-04 Lg.Philips Lcd Co., Ltd. Array substrate for liquid crystal display and method for fabricating the same
WO2007004130A2 (en) * 2005-06-30 2007-01-11 Polymer Vision Limited Pixel perfromance improvement by use of a field-shield
EP1912095A1 (en) * 2006-10-12 2008-04-16 Samsung Electronics Co., Ltd. Display panel manufacture

Also Published As

Publication number Publication date
WO2009045102A2 (en) 2009-04-09
TW200924107A (en) 2009-06-01

Similar Documents

Publication Publication Date Title
EP1926145A3 (en) Self-aligned through vias for chip stacking
WO2009066629A1 (en) Antenna element and method for manufacturing the same
TW200701264A (en) Inductor
WO2009021741A8 (en) Organic electronic components
SG110059A1 (en) Laminate comprising an electrically conductive layer formed as an antenna structure
TW200501182A (en) A capacitor structure
WO2009005912A3 (en) Notch antenna having a low profile stripline feed
DE502007000284D1 (en) Power semiconductor module with mutually electrically insulated connection elements
TW200717887A (en) Thermoelectric device and method for fabricating the same and chip and electronic device
CA2677311A1 (en) Aircraft assembly and method for manufacturing the same
WO2009001946A1 (en) Touch panel, and touch panel type display device
WO2008155967A1 (en) Board with built-in component and its manufacturing method
WO2009075079A1 (en) Circuit board, circuit board manufacturing method, and cover ray film
WO2010076335A9 (en) Multilayer film element
WO2007043972A8 (en) Device carrying an integrated circuit/components and method of producing the same
WO2008096464A1 (en) Printed circuit board and method for manufacturing the printed circuit board
WO2012085472A3 (en) Printed circuit board with an insulated metal substrate
TW200730041A (en) Circuit board with embeded passive component and fabricating process thereof
GB2466163A (en) Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure
TW200621101A (en) Circuit board
WO2009045102A3 (en) An electronic circuit element with profiled photopatternable dielectric layer
WO2008128016A3 (en) Metal core circuit boards for light emitting diode applications and methods of manufacture thereof
WO2009062469A3 (en) Electrical conductor and stamped grid with flat webbed conductors comprising such an electrical conductor
WO2005101480A3 (en) Circuit mounted on an especially electroconductive substrate by means of a planar connection technique
TW200802817A (en) Self-aligned, embedded phase change ram and manufacturing method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08836727

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08836727

Country of ref document: EP

Kind code of ref document: A2