WO2009038193A1 - 炭素材料及びその製造方法 - Google Patents
炭素材料及びその製造方法 Download PDFInfo
- Publication number
- WO2009038193A1 WO2009038193A1 PCT/JP2008/067022 JP2008067022W WO2009038193A1 WO 2009038193 A1 WO2009038193 A1 WO 2009038193A1 JP 2008067022 W JP2008067022 W JP 2008067022W WO 2009038193 A1 WO2009038193 A1 WO 2009038193A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carbon material
- buffer layer
- base
- producing
- layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
炭素材料10は、炭素質又は黒鉛質の基材1と、その表面に形成されており、ダイヤモンド粒子4の一部分が基材1に埋設されたダイヤモンド粒子4を含有している緩衝層2と、その上に形成された導電性ダイヤモンド層3とを備えている。また、炭素材料の製造方法は、ダイヤモンド粒子4の一部分を炭素質又は黒鉛質からなる基材1表面に埋設してダイヤモンド粒子4を含有した緩衝層2を基材1表面に形成する緩衝層形成工程と、緩衝層2上に導電性ダイヤモンド層3を形成する導電性ダイヤモンド層形成工程とを有している。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009533207A JPWO2009038193A1 (ja) | 2007-09-20 | 2008-09-19 | 炭素材料及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-244552 | 2007-09-20 | ||
JP2007244552 | 2007-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009038193A1 true WO2009038193A1 (ja) | 2009-03-26 |
Family
ID=40468002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/067022 WO2009038193A1 (ja) | 2007-09-20 | 2008-09-19 | 炭素材料及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2009038193A1 (ja) |
TW (1) | TW200925108A (ja) |
WO (1) | WO2009038193A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012066979A (ja) * | 2010-09-27 | 2012-04-05 | Sumitomo Electric Ind Ltd | 高硬度導電性ダイヤモンド多結晶体およびその製造方法 |
JP2012066980A (ja) * | 2010-09-27 | 2012-04-05 | Sumitomo Electric Ind Ltd | 高硬度導電性ダイヤモンド多結晶体およびその製造方法 |
WO2014024569A1 (ja) * | 2012-08-08 | 2014-02-13 | 日産自動車株式会社 | 接点部材及び電動機 |
CN115181957A (zh) * | 2022-08-25 | 2022-10-14 | 北京爱克瑞特金刚石工具有限公司 | 一种功能性金刚石微纳米粉体及复合体的制备和应用 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251158A (ja) * | 1985-04-30 | 1986-11-08 | Sumitomo Electric Ind Ltd | 放熱基板 |
JPS62138395A (ja) * | 1985-12-09 | 1987-06-22 | Kyocera Corp | ダイヤモンド膜の製造方法 |
JPH0297486A (ja) * | 1988-10-02 | 1990-04-10 | Canon Inc | ダイヤモンド膜及びその製造法 |
JPH0558784A (ja) * | 1991-09-02 | 1993-03-09 | Toyota Central Res & Dev Lab Inc | ダイヤモンドの析出方法 |
JP2003147527A (ja) * | 2001-11-08 | 2003-05-21 | Kobe Steel Ltd | ダイヤモンド被覆非ダイヤモンド炭素部材及びその製造方法 |
WO2005014886A1 (ja) * | 2003-08-07 | 2005-02-17 | Ebara Corporation | ダイアモンド電極の成膜方法 |
-
2008
- 2008-09-19 JP JP2009533207A patent/JPWO2009038193A1/ja active Pending
- 2008-09-19 WO PCT/JP2008/067022 patent/WO2009038193A1/ja active Application Filing
- 2008-09-22 TW TW97136322A patent/TW200925108A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251158A (ja) * | 1985-04-30 | 1986-11-08 | Sumitomo Electric Ind Ltd | 放熱基板 |
JPS62138395A (ja) * | 1985-12-09 | 1987-06-22 | Kyocera Corp | ダイヤモンド膜の製造方法 |
JPH0297486A (ja) * | 1988-10-02 | 1990-04-10 | Canon Inc | ダイヤモンド膜及びその製造法 |
JPH0558784A (ja) * | 1991-09-02 | 1993-03-09 | Toyota Central Res & Dev Lab Inc | ダイヤモンドの析出方法 |
JP2003147527A (ja) * | 2001-11-08 | 2003-05-21 | Kobe Steel Ltd | ダイヤモンド被覆非ダイヤモンド炭素部材及びその製造方法 |
WO2005014886A1 (ja) * | 2003-08-07 | 2005-02-17 | Ebara Corporation | ダイアモンド電極の成膜方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012066979A (ja) * | 2010-09-27 | 2012-04-05 | Sumitomo Electric Ind Ltd | 高硬度導電性ダイヤモンド多結晶体およびその製造方法 |
JP2012066980A (ja) * | 2010-09-27 | 2012-04-05 | Sumitomo Electric Ind Ltd | 高硬度導電性ダイヤモンド多結晶体およびその製造方法 |
WO2014024569A1 (ja) * | 2012-08-08 | 2014-02-13 | 日産自動車株式会社 | 接点部材及び電動機 |
CN115181957A (zh) * | 2022-08-25 | 2022-10-14 | 北京爱克瑞特金刚石工具有限公司 | 一种功能性金刚石微纳米粉体及复合体的制备和应用 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009038193A1 (ja) | 2011-01-13 |
TW200925108A (en) | 2009-06-16 |
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