WO2009038126A1 - 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 - Google Patents
分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 Download PDFInfo
- Publication number
- WO2009038126A1 WO2009038126A1 PCT/JP2008/066856 JP2008066856W WO2009038126A1 WO 2009038126 A1 WO2009038126 A1 WO 2009038126A1 JP 2008066856 W JP2008066856 W JP 2008066856W WO 2009038126 A1 WO2009038126 A1 WO 2009038126A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- underlayer film
- resist underlayer
- forming composition
- polyhydroxystyrene
- film forming
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/676,720 US20100291483A1 (en) | 2007-09-20 | 2008-09-18 | Resist underlayer film forming composition containing branched polyhydroxystyrene |
JP2009533175A JPWO2009038126A1 (ja) | 2007-09-20 | 2008-09-18 | 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-243602 | 2007-09-20 | ||
JP2007243602 | 2007-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009038126A1 true WO2009038126A1 (ja) | 2009-03-26 |
Family
ID=40467936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/066856 WO2009038126A1 (ja) | 2007-09-20 | 2008-09-18 | 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100291483A1 (ja) |
JP (1) | JPWO2009038126A1 (ja) |
KR (1) | KR20100058574A (ja) |
TW (1) | TW200923585A (ja) |
WO (1) | WO2009038126A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011074433A1 (ja) * | 2009-12-16 | 2011-06-23 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物 |
WO2011086757A1 (ja) * | 2010-01-18 | 2011-07-21 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法 |
WO2014014034A1 (ja) * | 2012-07-20 | 2014-01-23 | Jsr株式会社 | レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、パターン形成方法、架橋剤並びに化合物 |
WO2014017331A1 (ja) * | 2012-07-25 | 2014-01-30 | 日産化学工業株式会社 | リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法 |
JP2015018223A (ja) * | 2013-06-11 | 2015-01-29 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
JP2015517126A (ja) * | 2012-04-23 | 2015-06-18 | ブルーワー サイエンス アイ エヌシー. | 感光性、現像液可溶性の底面反射防止膜材料 |
CN109790264A (zh) * | 2016-10-05 | 2019-05-21 | Dic株式会社 | 含酚羟基树脂及抗蚀剂材料 |
JP2019537043A (ja) * | 2016-09-30 | 2019-12-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド | オーバーコーティングされたフォトレジストと共に使用するためのコーティング組成物 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101556276B1 (ko) * | 2012-12-28 | 2015-09-30 | 제일모직 주식회사 | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
JP6196194B2 (ja) * | 2014-08-19 | 2017-09-13 | 信越化学工業株式会社 | 紫外線吸収剤、レジスト下層膜形成用組成物、及びパターン形成方法 |
US10007184B2 (en) * | 2016-09-01 | 2018-06-26 | Rohm And Haas Electronic Materials Llc | Silicon-containing underlayers |
KR20230045952A (ko) | 2021-09-29 | 2023-04-05 | 주식회사 동진쎄미켐 | 포토레지스트 하층막 형성용 고분자 화합물, 이를 포함하는 euv용 포토레지스트 하층막 조성물, euv용 포토레지스트 하층막의 제조방법 및 포토레지스트 막 패턴의 형성 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000347412A (ja) * | 1999-03-26 | 2000-12-15 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2005070154A (ja) * | 2003-08-28 | 2005-03-17 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用組成物およびレジストパターンの形成方法 |
JP2006030897A (ja) * | 2004-07-21 | 2006-02-02 | Fuji Photo Film Co Ltd | パターン形成材料、並びにパターン形成装置及びパターン形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06230574A (ja) * | 1993-02-05 | 1994-08-19 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
US6156479A (en) * | 1997-09-30 | 2000-12-05 | Brewer Science, Inc. | Thermosetting anti-refective coatings |
KR100566042B1 (ko) * | 1997-10-07 | 2006-05-25 | 간사이 페인트 가부시키가이샤 | 포지티브형전착포토레지스트조성물및패턴의제조방법 |
US20030050191A1 (en) * | 2001-05-29 | 2003-03-13 | Bhatt Jayprakash C. | Imaging medium incorporating a polymeric developer for leuco dye |
US7072718B2 (en) * | 2002-12-03 | 2006-07-04 | Cardiac Pacemakers, Inc. | Antenna systems for implantable medical device telemetry |
US7662538B2 (en) * | 2004-11-08 | 2010-02-16 | Du Pont Electronic Polymers L.P. | Derivatized polyhydroxystyrenes (DPHS) with a novolak type structure and blocked DPHS (BDPHS) and processes for preparing the same |
EP2207837B1 (en) * | 2007-10-30 | 2015-03-25 | Brewer Science, Inc. | Method of forming a microelectronic structure |
-
2008
- 2008-09-18 JP JP2009533175A patent/JPWO2009038126A1/ja active Pending
- 2008-09-18 US US12/676,720 patent/US20100291483A1/en not_active Abandoned
- 2008-09-18 WO PCT/JP2008/066856 patent/WO2009038126A1/ja active Application Filing
- 2008-09-18 KR KR1020107006085A patent/KR20100058574A/ko not_active Application Discontinuation
- 2008-09-19 TW TW097136133A patent/TW200923585A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000347412A (ja) * | 1999-03-26 | 2000-12-15 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2005070154A (ja) * | 2003-08-28 | 2005-03-17 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用組成物およびレジストパターンの形成方法 |
JP2006030897A (ja) * | 2004-07-21 | 2006-02-02 | Fuji Photo Film Co Ltd | パターン形成材料、並びにパターン形成装置及びパターン形成方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011074433A1 (ja) * | 2009-12-16 | 2011-06-23 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物 |
JP5673960B2 (ja) * | 2009-12-16 | 2015-02-18 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物 |
US9436085B2 (en) | 2009-12-16 | 2016-09-06 | Nissan Chemical Industries, Ltd. | Composition for forming photosensitive resist underlayer film |
WO2011086757A1 (ja) * | 2010-01-18 | 2011-07-21 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法 |
JP5708938B2 (ja) * | 2010-01-18 | 2015-04-30 | 日産化学工業株式会社 | 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法 |
JP2015517126A (ja) * | 2012-04-23 | 2015-06-18 | ブルーワー サイエンス アイ エヌシー. | 感光性、現像液可溶性の底面反射防止膜材料 |
WO2014014034A1 (ja) * | 2012-07-20 | 2014-01-23 | Jsr株式会社 | レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、パターン形成方法、架橋剤並びに化合物 |
JPWO2014014034A1 (ja) * | 2012-07-20 | 2016-07-07 | Jsr株式会社 | レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、パターン形成方法、架橋剤並びに化合物 |
WO2014017331A1 (ja) * | 2012-07-25 | 2014-01-30 | 日産化学工業株式会社 | リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法 |
JP2015018223A (ja) * | 2013-06-11 | 2015-01-29 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
JP2019537043A (ja) * | 2016-09-30 | 2019-12-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド | オーバーコーティングされたフォトレジストと共に使用するためのコーティング組成物 |
CN109790264A (zh) * | 2016-10-05 | 2019-05-21 | Dic株式会社 | 含酚羟基树脂及抗蚀剂材料 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009038126A1 (ja) | 2011-01-06 |
US20100291483A1 (en) | 2010-11-18 |
TW200923585A (en) | 2009-06-01 |
KR20100058574A (ko) | 2010-06-03 |
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