WO2009038126A1 - 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 - Google Patents

分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 Download PDF

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Publication number
WO2009038126A1
WO2009038126A1 PCT/JP2008/066856 JP2008066856W WO2009038126A1 WO 2009038126 A1 WO2009038126 A1 WO 2009038126A1 JP 2008066856 W JP2008066856 W JP 2008066856W WO 2009038126 A1 WO2009038126 A1 WO 2009038126A1
Authority
WO
WIPO (PCT)
Prior art keywords
underlayer film
resist underlayer
forming composition
polyhydroxystyrene
film forming
Prior art date
Application number
PCT/JP2008/066856
Other languages
English (en)
French (fr)
Inventor
Takahiro Hamada
Noriaki Fujitani
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to US12/676,720 priority Critical patent/US20100291483A1/en
Priority to JP2009533175A priority patent/JPWO2009038126A1/ja
Publication of WO2009038126A1 publication Critical patent/WO2009038126A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

【課題】上層に塗布、形成されるフォトレジストとのインターミキシングを起こさず、アルカリ性現像液に溶解し、フォトレジストと同時に現像除去可能なレジスト下層膜、及び該レジスト下層膜を形成するためのレジスト下層膜形成組成物を提供する。 【解決手段】ポリヒドロキシスチレンの繰り返し単位のエチレン基が他の異なるポリヒドロキシスチレンのベンゼン環に結合した分岐型ポリヒドロキシスチレン（Ａ）、少なくとも２つのビニルエーテル基を有する化合物（Ｂ）、及び光酸発生剤（Ｃ）を含む半導体装置製造のリソグラフィープロセスに用いるレジスト下層膜形成組成物である。
PCT/JP2008/066856 2007-09-20 2008-09-18 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物 WO2009038126A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/676,720 US20100291483A1 (en) 2007-09-20 2008-09-18 Resist underlayer film forming composition containing branched polyhydroxystyrene
JP2009533175A JPWO2009038126A1 (ja) 2007-09-20 2008-09-18 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-243602 2007-09-20
JP2007243602 2007-09-20

Publications (1)

Publication Number Publication Date
WO2009038126A1 true WO2009038126A1 (ja) 2009-03-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066856 WO2009038126A1 (ja) 2007-09-20 2008-09-18 分岐型ポリヒドロキシスチレンを含むレジスト下層膜形成組成物

Country Status (5)

Country Link
US (1) US20100291483A1 (ja)
JP (1) JPWO2009038126A1 (ja)
KR (1) KR20100058574A (ja)
TW (1) TW200923585A (ja)
WO (1) WO2009038126A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074433A1 (ja) * 2009-12-16 2011-06-23 日産化学工業株式会社 感光性レジスト下層膜形成組成物
WO2011086757A1 (ja) * 2010-01-18 2011-07-21 日産化学工業株式会社 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
WO2014014034A1 (ja) * 2012-07-20 2014-01-23 Jsr株式会社 レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、パターン形成方法、架橋剤並びに化合物
WO2014017331A1 (ja) * 2012-07-25 2014-01-30 日産化学工業株式会社 リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
JP2015018223A (ja) * 2013-06-11 2015-01-29 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP2015517126A (ja) * 2012-04-23 2015-06-18 ブルーワー サイエンス アイ エヌシー． 感光性、現像液可溶性の底面反射防止膜材料
CN109790264A (zh) * 2016-10-05 2019-05-21 Dic株式会社 含酚羟基树脂及抗蚀剂材料
JP2019537043A (ja) * 2016-09-30 2019-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド オーバーコーティングされたフォトレジストと共に使用するためのコーティング組成物

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101556276B1 (ko) * 2012-12-28 2015-09-30 제일모직 주식회사 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
JP6196194B2 (ja) * 2014-08-19 2017-09-13 信越化学工業株式会社 紫外線吸収剤、レジスト下層膜形成用組成物、及びパターン形成方法
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
KR20230045952A (ko) 2021-09-29 2023-04-05 주식회사 동진쎄미켐 포토레지스트 하층막 형성용 고분자 화합물, 이를 포함하는 euv용 포토레지스트 하층막 조성물, euv용 포토레지스트 하층막의 제조방법 및 포토레지스트 막 패턴의 형성 방법

Citations (3)

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JP2000347412A (ja) * 1999-03-26 2000-12-15 Shin Etsu Chem Co Ltd レジスト材料及びパターン形成方法
JP2005070154A (ja) * 2003-08-28 2005-03-17 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物およびレジストパターンの形成方法
JP2006030897A (ja) * 2004-07-21 2006-02-02 Fuji Photo Film Co Ltd パターン形成材料、並びにパターン形成装置及びパターン形成方法

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KR100566042B1 (ko) * 1997-10-07 2006-05-25 간사이 페인트 가부시키가이샤 포지티브형전착포토레지스트조성물및패턴의제조방법
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EP2207837B1 (en) * 2007-10-30 2015-03-25 Brewer Science, Inc. Method of forming a microelectronic structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000347412A (ja) * 1999-03-26 2000-12-15 Shin Etsu Chem Co Ltd レジスト材料及びパターン形成方法
JP2005070154A (ja) * 2003-08-28 2005-03-17 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物およびレジストパターンの形成方法
JP2006030897A (ja) * 2004-07-21 2006-02-02 Fuji Photo Film Co Ltd パターン形成材料、並びにパターン形成装置及びパターン形成方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074433A1 (ja) * 2009-12-16 2011-06-23 日産化学工業株式会社 感光性レジスト下層膜形成組成物
JP5673960B2 (ja) * 2009-12-16 2015-02-18 日産化学工業株式会社 感光性レジスト下層膜形成組成物
US9436085B2 (en) 2009-12-16 2016-09-06 Nissan Chemical Industries, Ltd. Composition for forming photosensitive resist underlayer film
WO2011086757A1 (ja) * 2010-01-18 2011-07-21 日産化学工業株式会社 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
JP5708938B2 (ja) * 2010-01-18 2015-04-30 日産化学工業株式会社 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
JP2015517126A (ja) * 2012-04-23 2015-06-18 ブルーワー サイエンス アイ エヌシー． 感光性、現像液可溶性の底面反射防止膜材料
WO2014014034A1 (ja) * 2012-07-20 2014-01-23 Jsr株式会社 レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、パターン形成方法、架橋剤並びに化合物
JPWO2014014034A1 (ja) * 2012-07-20 2016-07-07 Jsr株式会社 レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、パターン形成方法、架橋剤並びに化合物
WO2014017331A1 (ja) * 2012-07-25 2014-01-30 日産化学工業株式会社 リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
JP2015018223A (ja) * 2013-06-11 2015-01-29 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP2019537043A (ja) * 2016-09-30 2019-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド オーバーコーティングされたフォトレジストと共に使用するためのコーティング組成物
CN109790264A (zh) * 2016-10-05 2019-05-21 Dic株式会社 含酚羟基树脂及抗蚀剂材料

Also Published As

Publication number Publication date
JPWO2009038126A1 (ja) 2011-01-06
US20100291483A1 (en) 2010-11-18
TW200923585A (en) 2009-06-01
KR20100058574A (ko) 2010-06-03

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