WO2009037808A1 - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
- Publication number
- WO2009037808A1 WO2009037808A1 PCT/JP2008/002471 JP2008002471W WO2009037808A1 WO 2009037808 A1 WO2009037808 A1 WO 2009037808A1 JP 2008002471 W JP2008002471 W JP 2008002471W WO 2009037808 A1 WO2009037808 A1 WO 2009037808A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dtr
- dummy transistors
- scl
- transistors
- substrate contact
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7846—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the lateral device isolation region, e.g. STI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
回路動作に関与する2本のトランジスタTR、TRの外郭に、各々、ダミートランジスタDTR、DTRが配置される。この両ダミートランジスタDTR、DTRを挟み込む形でパターン端に基板コンタクトラインSCLが配置される。この基板コンタクトラインSCLは、前記各ダミートランジスタDTRの側部に位置するドレイン端子Dと接して配置される。前記基板コンタクトラインSCLの幅を任意に選択すれば、両ダミートランジスタDTRの外郭に素子分離領域は発生せず、STI応力ひずみは軽減される。また、ダミートランジスタDTRが配置されるので、ゲート領域の等間隔性を保持したレイアウトパターンが得られる。従って、微細プロセスにおけるSTI応力ひずみに起因して、トランジスタ特性の変動やトランジスタ特性のばらつきが発生したり、トランジスタモデルと実際に形成されるトランジスタデバイスとの差異が乖離したりすることを抑制できる。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007241049 | 2007-09-18 | ||
JP2007-241049 | 2007-09-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009037808A1 true WO2009037808A1 (ja) | 2009-03-26 |
Family
ID=40467637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/002471 WO2009037808A1 (ja) | 2007-09-18 | 2008-09-08 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009037808A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8957480B2 (en) | 2011-03-04 | 2015-02-17 | Renesas Electronics Corporation | Semiconductor device including dummy transistors with reduced off-leakage current |
CN104835815A (zh) * | 2014-02-07 | 2015-08-12 | 亚德诺半导体集团 | 复合电路元件的布局 |
US9143123B2 (en) | 2012-07-10 | 2015-09-22 | Infineon Technologies Ag | RF switch, mobile communication device and method for switching an RF signal |
DE102015101549B4 (de) * | 2014-02-07 | 2017-01-26 | Analog Devices Global | Anordnung zusammengesetzter Schaltungselemente sowie zugehöriges Herstellungsverfahren |
US10043905B2 (en) | 2015-09-11 | 2018-08-07 | Toshiba Memory Corporation | Semiconductor device |
CN108701653A (zh) * | 2016-02-25 | 2018-10-23 | 株式会社索思未来 | 半导体集成电路装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02238668A (ja) * | 1989-03-10 | 1990-09-20 | Fujitsu Ltd | 半導体装置 |
JP2001044397A (ja) * | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | 半導体集積回路 |
JP2002368117A (ja) * | 2001-04-02 | 2002-12-20 | Matsushita Electric Ind Co Ltd | アナログmos半導体装置、その製造方法、製造プログラム及びプログラム装置 |
JP2007096211A (ja) * | 2005-09-30 | 2007-04-12 | Ricoh Co Ltd | 半導体装置 |
-
2008
- 2008-09-08 WO PCT/JP2008/002471 patent/WO2009037808A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02238668A (ja) * | 1989-03-10 | 1990-09-20 | Fujitsu Ltd | 半導体装置 |
JP2001044397A (ja) * | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | 半導体集積回路 |
JP2002368117A (ja) * | 2001-04-02 | 2002-12-20 | Matsushita Electric Ind Co Ltd | アナログmos半導体装置、その製造方法、製造プログラム及びプログラム装置 |
JP2007096211A (ja) * | 2005-09-30 | 2007-04-12 | Ricoh Co Ltd | 半導体装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8957480B2 (en) | 2011-03-04 | 2015-02-17 | Renesas Electronics Corporation | Semiconductor device including dummy transistors with reduced off-leakage current |
US9349727B2 (en) | 2011-03-04 | 2016-05-24 | Renesas Electronics Corporation | Semiconductor device |
US9143123B2 (en) | 2012-07-10 | 2015-09-22 | Infineon Technologies Ag | RF switch, mobile communication device and method for switching an RF signal |
DE102013213366B4 (de) | 2012-07-10 | 2022-09-15 | Infineon Technologies Ag | HF-Schalter, Mobilkommunikationseinrichtung und Verfahren zum Schalten eines HF-Signals |
CN104835815A (zh) * | 2014-02-07 | 2015-08-12 | 亚德诺半导体集团 | 复合电路元件的布局 |
DE102015101549B4 (de) * | 2014-02-07 | 2017-01-26 | Analog Devices Global | Anordnung zusammengesetzter Schaltungselemente sowie zugehöriges Herstellungsverfahren |
US10043905B2 (en) | 2015-09-11 | 2018-08-07 | Toshiba Memory Corporation | Semiconductor device |
USRE49164E1 (en) | 2015-09-11 | 2022-08-09 | Kioxia Corporation | Semiconductor device |
CN108701653A (zh) * | 2016-02-25 | 2018-10-23 | 株式会社索思未来 | 半导体集成电路装置 |
CN108701653B (zh) * | 2016-02-25 | 2022-07-29 | 株式会社索思未来 | 半导体集成电路装置 |
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