WO2009031301A1 - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

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Publication number
WO2009031301A1
WO2009031301A1 PCT/JP2008/002425 JP2008002425W WO2009031301A1 WO 2009031301 A1 WO2009031301 A1 WO 2009031301A1 JP 2008002425 W JP2008002425 W JP 2008002425W WO 2009031301 A1 WO2009031301 A1 WO 2009031301A1
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WO
WIPO (PCT)
Prior art keywords
pixel
storage units
region
pixels
continuous imaging
Prior art date
Application number
PCT/JP2008/002425
Other languages
English (en)
French (fr)
Inventor
Shigetoshi Sugawa
Yasushi Kondo
Hideki Tominaga
Original Assignee
Tohoku University
Shimadzu Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University, Shimadzu Corporation filed Critical Tohoku University
Priority to JP2009531123A priority Critical patent/JP4931160B2/ja
Priority to CN200880105558A priority patent/CN101796822A/zh
Priority to KR1020107003063A priority patent/KR101126322B1/ko
Priority to EP08829399.8A priority patent/EP2190185B1/en
Priority to US12/676,562 priority patent/US8988571B2/en
Publication of WO2009031301A1 publication Critical patent/WO2009031301A1/ja

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/571Control of the dynamic range involving a non-linear response
    • H04N25/575Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

 フォトダイオードを含む画素(10)を二次元アレイ状に配列した画素領域(2a)と、各画素で生成された信号を連続撮影のフレーム数分だけ保持する記憶部を配置した記憶領域(3a)とを半導体基板上で分離して設ける。全画素は同時に光電荷蓄積を実行し、光電荷の蓄積により生成した信号をそれぞれ独立した画素出力線(14)を通して並行して出力する。そして、1本の画素出力線に接続された複数の記憶部において、1回の露光毎に異なる記憶部のサンプリングトランジスタを順にオンさせることで各記憶部のキャパシタに信号を順番に保持し、連続撮影終了後に全ての画素信号を逐次読み出す。CCDのように全ゲート負荷が一斉に駆動されないので消費電力を抑え、高速駆動が可能となる。また、記憶領域が画素領域と分離されているので、過剰な光電荷の流れ込みによる信号の劣化も防止できる。これにより、従来よりも高速の連続撮影を可能としつつ、撮影画像の画質を向上させることができる。
PCT/JP2008/002425 2007-09-05 2008-09-04 固体撮像素子 WO2009031301A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009531123A JP4931160B2 (ja) 2007-09-05 2008-09-04 固体撮像素子
CN200880105558A CN101796822A (zh) 2007-09-05 2008-09-04 固体摄像元件
KR1020107003063A KR101126322B1 (ko) 2007-09-05 2008-09-04 고체촬상소자
EP08829399.8A EP2190185B1 (en) 2007-09-05 2008-09-04 Solid-state image sensor
US12/676,562 US8988571B2 (en) 2007-09-05 2008-09-04 Solid-state image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230178 2007-09-05
JP2007-230178 2007-09-05

Publications (1)

Publication Number Publication Date
WO2009031301A1 true WO2009031301A1 (ja) 2009-03-12

Family

ID=40428625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002425 WO2009031301A1 (ja) 2007-09-05 2008-09-04 固体撮像素子

Country Status (7)

Country Link
US (1) US8988571B2 (ja)
EP (1) EP2190185B1 (ja)
JP (1) JP4931160B2 (ja)
KR (1) KR101126322B1 (ja)
CN (1) CN101796822A (ja)
TW (1) TW200922308A (ja)
WO (1) WO2009031301A1 (ja)

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WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
JP2011233949A (ja) * 2010-04-23 2011-11-17 Olympus Corp 撮像装置
JP2013015357A (ja) * 2011-07-01 2013-01-24 Shimadzu Corp フローサイトメータ
US8541731B2 (en) 2008-06-10 2013-09-24 Shimadzu Corporation Solid-state image sensor
US9030582B2 (en) 2011-02-08 2015-05-12 Shimadzu Corporation Solid state image sensor and method for driving the same
WO2017006411A1 (ja) * 2015-07-06 2017-01-12 株式会社島津製作所 固体撮像素子の信号処理方法及び駆動方法
JP2017220749A (ja) * 2016-06-06 2017-12-14 キヤノン株式会社 撮像装置、撮像システム
JP2021022948A (ja) * 2020-11-04 2021-02-18 キヤノン株式会社 撮像装置、撮像システム
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置

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WO2009031304A1 (ja) * 2007-09-05 2009-03-12 Tohoku University 固体撮像素子及びその製造方法
JP5709404B2 (ja) * 2010-05-10 2015-04-30 キヤノン株式会社 固体撮像装置およびその駆動方法
JP4657379B1 (ja) * 2010-09-01 2011-03-23 株式会社ナックイメージテクノロジー 高速度ビデオカメラ
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JP6042636B2 (ja) * 2012-05-28 2016-12-14 オリンパス株式会社 固体撮像素子および固体撮像装置
EP2890117B1 (en) 2013-12-26 2020-11-18 IMEC vzw Improvements in or relating to imaging sensors
TWI648986B (zh) * 2014-04-15 2019-01-21 日商新力股份有限公司 攝像元件、電子機器
US10070088B2 (en) * 2015-01-05 2018-09-04 Canon Kabushiki Kaisha Image sensor and image capturing apparatus for simultaneously performing focus detection and image generation
JP6218799B2 (ja) 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
GB2544333B (en) * 2015-11-13 2018-02-21 Advanced Risc Mach Ltd Display controller
JP6842240B2 (ja) 2016-03-07 2021-03-17 株式会社リコー 画素ユニット、及び撮像素子
WO2017163774A1 (ja) * 2016-03-24 2017-09-28 株式会社ニコン 撮像素子および撮像装置
DE102016212765A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit
TWI754696B (zh) * 2016-12-14 2022-02-11 日商索尼半導體解決方案公司 固體攝像元件及電子機器
KR102427832B1 (ko) 2017-04-12 2022-08-02 삼성전자주식회사 이미지 센서
KR102454484B1 (ko) 2018-02-05 2022-10-14 페엠데테히놀로기스 아게 카메라용 픽셀 어레이, 카메라 및 이 종류의 카메라를 가진 광 전파 시간 카메라 시스템
JP7472902B2 (ja) * 2019-03-29 2024-04-23 Toppanホールディングス株式会社 固体撮像装置、撮像システム及び撮像方法
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Cited By (13)

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US8541731B2 (en) 2008-06-10 2013-09-24 Shimadzu Corporation Solid-state image sensor
WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
US8530947B2 (en) 2009-07-10 2013-09-10 Shimadzu Corporation Solid-state image sensor
JP2011233949A (ja) * 2010-04-23 2011-11-17 Olympus Corp 撮像装置
US9030582B2 (en) 2011-02-08 2015-05-12 Shimadzu Corporation Solid state image sensor and method for driving the same
JP2013015357A (ja) * 2011-07-01 2013-01-24 Shimadzu Corp フローサイトメータ
WO2017006411A1 (ja) * 2015-07-06 2017-01-12 株式会社島津製作所 固体撮像素子の信号処理方法及び駆動方法
JPWO2017006411A1 (ja) * 2015-07-06 2017-10-26 株式会社島津製作所 固体撮像素子の信号処理方法及び駆動方法
JP2017220749A (ja) * 2016-06-06 2017-12-14 キヤノン株式会社 撮像装置、撮像システム
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置
JP7330124B2 (ja) 2020-03-19 2023-08-21 株式会社東芝 固体撮像装置
JP2021022948A (ja) * 2020-11-04 2021-02-18 キヤノン株式会社 撮像装置、撮像システム
JP7030929B2 (ja) 2020-11-04 2022-03-07 キヤノン株式会社 撮像装置、撮像システム

Also Published As

Publication number Publication date
JPWO2009031301A1 (ja) 2010-12-09
TW200922308A (en) 2009-05-16
JP4931160B2 (ja) 2012-05-16
CN101796822A (zh) 2010-08-04
KR20100038446A (ko) 2010-04-14
EP2190185A1 (en) 2010-05-26
KR101126322B1 (ko) 2012-07-12
US20100208115A1 (en) 2010-08-19
EP2190185A4 (en) 2010-08-18
EP2190185B1 (en) 2013-11-06
US8988571B2 (en) 2015-03-24

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