WO2009031001A3 - Vertical igbt and method of manufacturing the same - Google Patents
Vertical igbt and method of manufacturing the same Download PDFInfo
- Publication number
- WO2009031001A3 WO2009031001A3 PCT/IB2008/002268 IB2008002268W WO2009031001A3 WO 2009031001 A3 WO2009031001 A3 WO 2009031001A3 IB 2008002268 W IB2008002268 W IB 2008002268W WO 2009031001 A3 WO2009031001 A3 WO 2009031001A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type
- buffer layer
- vertical igbt
- manufacturing
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 210000000746 body region Anatomy 0.000 abstract 1
- 238000009751 slip forming Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A semiconductor device 100, a vertical IGBT, includes a collector electrode 2, a p+-type collector layer 4, an n+-type buffer layer 6, an n--type drift layer 8, a p--type body region 10, an n+-type emitter region 12, a gate electrode 18, and an emitter electrode 14. The semiconductor device 100 includes uneven portions 32 in a back surface, each of which includes a recessed portion 28 and a protrusion portion 30. A gap L2 between bottom faces of the adjacent recessed portions 28 is 70% of or smaller than a thickness L1 of the buffer layer 6. Therefore, the buffer layer 6 is continuously formed, at a certain depth from the bottom faces of the recessed portions.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-229194 | 2007-09-04 | ||
JP2007229194A JP2009064825A (en) | 2007-09-04 | 2007-09-04 | Semiconductor device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009031001A2 WO2009031001A2 (en) | 2009-03-12 |
WO2009031001A3 true WO2009031001A3 (en) | 2009-06-04 |
Family
ID=40429450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2008/002268 WO2009031001A2 (en) | 2007-09-04 | 2008-09-02 | Vertical igbt and method of manufacturing the same |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2009064825A (en) |
WO (1) | WO2009031001A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102135687B1 (en) * | 2013-06-27 | 2020-07-20 | 온세미컨덕터코리아 주식회사 | Power semiconductor device and method of manufacturing the same |
US11233141B2 (en) | 2018-01-16 | 2022-01-25 | Ipower Semiconductor | Self-aligned and robust IGBT devices |
WO2019157222A1 (en) * | 2018-02-07 | 2019-08-15 | Ipower Semiconductor | Igbt devices with 3d backside structures for field stop and reverse conduction |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10038190A1 (en) * | 2000-08-04 | 2002-02-21 | Siced Elect Dev Gmbh & Co Kg | Semiconductor structure with locally thinned substrate for control of vertically flowing current through semiconductor |
EP1265293A2 (en) * | 2001-06-08 | 2002-12-11 | Infineon Technologies AG | Semiconductor component having pores and method of making the same |
US20040082116A1 (en) * | 2002-10-24 | 2004-04-29 | Kub Francis J. | Vertical conducting power semiconductor devices implemented by deep etch |
DE10333556A1 (en) * | 2003-07-23 | 2005-03-03 | Infineon Technologies Ag | Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode |
JP2006156658A (en) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | Semiconductor device |
-
2007
- 2007-09-04 JP JP2007229194A patent/JP2009064825A/en not_active Withdrawn
-
2008
- 2008-09-02 WO PCT/IB2008/002268 patent/WO2009031001A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10038190A1 (en) * | 2000-08-04 | 2002-02-21 | Siced Elect Dev Gmbh & Co Kg | Semiconductor structure with locally thinned substrate for control of vertically flowing current through semiconductor |
EP1265293A2 (en) * | 2001-06-08 | 2002-12-11 | Infineon Technologies AG | Semiconductor component having pores and method of making the same |
US20040082116A1 (en) * | 2002-10-24 | 2004-04-29 | Kub Francis J. | Vertical conducting power semiconductor devices implemented by deep etch |
DE10333556A1 (en) * | 2003-07-23 | 2005-03-03 | Infineon Technologies Ag | Semiconductor element especially a non punch through field stop IGBT or p IGBT has highly doped layer in region near back surface of semiconductor but separated from rear electrode |
JP2006156658A (en) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO2009031001A2 (en) | 2009-03-12 |
JP2009064825A (en) | 2009-03-26 |
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