WO2009025118A1 - 圧電共振子及びその製造方法 - Google Patents

圧電共振子及びその製造方法 Download PDF

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Publication number
WO2009025118A1
WO2009025118A1 PCT/JP2008/060887 JP2008060887W WO2009025118A1 WO 2009025118 A1 WO2009025118 A1 WO 2009025118A1 JP 2008060887 W JP2008060887 W JP 2008060887W WO 2009025118 A1 WO2009025118 A1 WO 2009025118A1
Authority
WO
WIPO (PCT)
Prior art keywords
acoustic impedance
piezoelectric resonator
layers
fabricating
same
Prior art date
Application number
PCT/JP2008/060887
Other languages
English (en)
French (fr)
Inventor
Korekiyo Ito
Keiichi Umeda
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Publication of WO2009025118A1 publication Critical patent/WO2009025118A1/ja

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

　音響反射層の層数を削減しても特性が劣化しないようにすることができる圧電共振子及びその製造方法を提供する。 　圧電共振子１０は、（ａ）基板１２と、（ｂ）一対の電極１５，１７の間に圧電薄膜１６が挟まれた振動部２と、（ｃ）少なくとも基板１２と振動部２との間に、音響インピーダンスが相対的に低い材料からなる複数の低音響インピーダンス層１３ａ，１３ｂ，１３ｃと音響インピーダンスが相対的に高い材料からなる複数の高音響インピーダンス層１４ａ，１４ｂとが交互に配置された音響反射層４とを備える。低音響インピーダンス層１３ａ，１３ｂ，１３ｃの少なくとも１層が引張応力を有する酸化シリコン膜である。高音響インピーダンス層１４ａ，１４ｂの少なくとも１層が圧縮応力を有するタングステン膜である。
PCT/JP2008/060887 2007-08-23 2008-06-13 圧電共振子及びその製造方法 WO2009025118A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-216719 2007-08-23
JP2007216719 2007-08-23

Publications (1)

Publication Number Publication Date
WO2009025118A1 true WO2009025118A1 (ja) 2009-02-26

Family

ID=40378025

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060887 WO2009025118A1 (ja) 2007-08-23 2008-06-13 圧電共振子及びその製造方法

Country Status (1)

Country Link
WO (1) WO2009025118A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014020788A1 (ja) * 2012-08-01 2014-02-06 パナソニック株式会社 有機電界発光素子の製造方法
JP2014154864A (ja) * 2013-02-14 2014-08-25 Ricoh Co Ltd アクチュエータの製造方法、アクチュエータ、液滴吐出ヘッド、インクカートリッジ、および画像形成装置
WO2023171715A1 (ja) * 2022-03-09 2023-09-14 京セラ株式会社 弾性波装置、分波器、通信装置および弾性波装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326445A (ja) * 1992-05-20 1993-12-10 Matsushita Electron Corp 半導体装置の製造方法
JP2004119938A (ja) * 2002-09-30 2004-04-15 Samco International Inc 酸化シリコン膜製造方法及び装置
JP2005244184A (ja) * 2004-01-28 2005-09-08 Toshiba Corp 薄膜圧電素子及び薄膜圧電素子の製造方法
JP2006050021A (ja) * 2004-07-30 2006-02-16 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2007181185A (ja) * 2005-12-01 2007-07-12 Sony Corp 音響共振器およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326445A (ja) * 1992-05-20 1993-12-10 Matsushita Electron Corp 半導体装置の製造方法
JP2004119938A (ja) * 2002-09-30 2004-04-15 Samco International Inc 酸化シリコン膜製造方法及び装置
JP2005244184A (ja) * 2004-01-28 2005-09-08 Toshiba Corp 薄膜圧電素子及び薄膜圧電素子の製造方法
JP2006050021A (ja) * 2004-07-30 2006-02-16 Toshiba Corp 薄膜圧電共振器及びその製造方法
JP2007181185A (ja) * 2005-12-01 2007-07-12 Sony Corp 音響共振器およびその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014020788A1 (ja) * 2012-08-01 2014-02-06 パナソニック株式会社 有機電界発光素子の製造方法
US20140349432A1 (en) * 2012-08-01 2014-11-27 Panasonic Corporation Method for manufacturing organic electroluminescent element
US9312488B2 (en) 2012-08-01 2016-04-12 Joled Inc. Method for manufacturing organic electroluminescent element with bi-layer cathode
JPWO2014020788A1 (ja) * 2012-08-01 2016-07-21 株式会社Ｊｏｌｅｄ 有機電界発光素子の製造方法
JP2014154864A (ja) * 2013-02-14 2014-08-25 Ricoh Co Ltd アクチュエータの製造方法、アクチュエータ、液滴吐出ヘッド、インクカートリッジ、および画像形成装置
WO2023171715A1 (ja) * 2022-03-09 2023-09-14 京セラ株式会社 弾性波装置、分波器、通信装置および弾性波装置の製造方法

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