WO2009025118A1 - 圧電共振子及びその製造方法 - Google Patents
圧電共振子及びその製造方法 Download PDFInfo
- Publication number
- WO2009025118A1 WO2009025118A1 PCT/JP2008/060887 JP2008060887W WO2009025118A1 WO 2009025118 A1 WO2009025118 A1 WO 2009025118A1 JP 2008060887 W JP2008060887 W JP 2008060887W WO 2009025118 A1 WO2009025118 A1 WO 2009025118A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- acoustic impedance
- piezoelectric resonator
- layers
- fabricating
- same
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000003534 oscillatory effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001771 impaired effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
音響反射層の層数を削減しても特性が劣化しないようにすることができる圧電共振子及びその製造方法を提供する。 圧電共振子10は、(a)基板12と、(b)一対の電極15,17の間に圧電薄膜16が挟まれた振動部2と、(c)少なくとも基板12と振動部2との間に、音響インピーダンスが相対的に低い材料からなる複数の低音響インピーダンス層13a,13b,13cと音響インピーダンスが相対的に高い材料からなる複数の高音響インピーダンス層14a,14bとが交互に配置された音響反射層4とを備える。低音響インピーダンス層13a,13b,13cの少なくとも1層が引張応力を有する酸化シリコン膜である。高音響インピーダンス層14a,14bの少なくとも1層が圧縮応力を有するタングステン膜である。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-216719 | 2007-08-23 | ||
JP2007216719 | 2007-08-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009025118A1 true WO2009025118A1 (ja) | 2009-02-26 |
Family
ID=40378025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060887 WO2009025118A1 (ja) | 2007-08-23 | 2008-06-13 | 圧電共振子及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009025118A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014020788A1 (ja) * | 2012-08-01 | 2014-02-06 | パナソニック株式会社 | 有機電界発光素子の製造方法 |
JP2014154864A (ja) * | 2013-02-14 | 2014-08-25 | Ricoh Co Ltd | アクチュエータの製造方法、アクチュエータ、液滴吐出ヘッド、インクカートリッジ、および画像形成装置 |
WO2023171715A1 (ja) * | 2022-03-09 | 2023-09-14 | 京セラ株式会社 | 弾性波装置、分波器、通信装置および弾性波装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326445A (ja) * | 1992-05-20 | 1993-12-10 | Matsushita Electron Corp | 半導体装置の製造方法 |
JP2004119938A (ja) * | 2002-09-30 | 2004-04-15 | Samco International Inc | 酸化シリコン膜製造方法及び装置 |
JP2005244184A (ja) * | 2004-01-28 | 2005-09-08 | Toshiba Corp | 薄膜圧電素子及び薄膜圧電素子の製造方法 |
JP2006050021A (ja) * | 2004-07-30 | 2006-02-16 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP2007181185A (ja) * | 2005-12-01 | 2007-07-12 | Sony Corp | 音響共振器およびその製造方法 |
-
2008
- 2008-06-13 WO PCT/JP2008/060887 patent/WO2009025118A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326445A (ja) * | 1992-05-20 | 1993-12-10 | Matsushita Electron Corp | 半導体装置の製造方法 |
JP2004119938A (ja) * | 2002-09-30 | 2004-04-15 | Samco International Inc | 酸化シリコン膜製造方法及び装置 |
JP2005244184A (ja) * | 2004-01-28 | 2005-09-08 | Toshiba Corp | 薄膜圧電素子及び薄膜圧電素子の製造方法 |
JP2006050021A (ja) * | 2004-07-30 | 2006-02-16 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP2007181185A (ja) * | 2005-12-01 | 2007-07-12 | Sony Corp | 音響共振器およびその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014020788A1 (ja) * | 2012-08-01 | 2014-02-06 | パナソニック株式会社 | 有機電界発光素子の製造方法 |
US20140349432A1 (en) * | 2012-08-01 | 2014-11-27 | Panasonic Corporation | Method for manufacturing organic electroluminescent element |
US9312488B2 (en) | 2012-08-01 | 2016-04-12 | Joled Inc. | Method for manufacturing organic electroluminescent element with bi-layer cathode |
JPWO2014020788A1 (ja) * | 2012-08-01 | 2016-07-21 | 株式会社Joled | 有機電界発光素子の製造方法 |
JP2014154864A (ja) * | 2013-02-14 | 2014-08-25 | Ricoh Co Ltd | アクチュエータの製造方法、アクチュエータ、液滴吐出ヘッド、インクカートリッジ、および画像形成装置 |
WO2023171715A1 (ja) * | 2022-03-09 | 2023-09-14 | 京セラ株式会社 | 弾性波装置、分波器、通信装置および弾性波装置の製造方法 |
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