WO2009022603A1 - フォトマスクの欠陥修正方法および装置 - Google Patents

フォトマスクの欠陥修正方法および装置 Download PDF

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Publication number
WO2009022603A1
WO2009022603A1 PCT/JP2008/064121 JP2008064121W WO2009022603A1 WO 2009022603 A1 WO2009022603 A1 WO 2009022603A1 JP 2008064121 W JP2008064121 W JP 2008064121W WO 2009022603 A1 WO2009022603 A1 WO 2009022603A1
Authority
WO
WIPO (PCT)
Prior art keywords
defect
corrected
ion beam
correcting
photomask defect
Prior art date
Application number
PCT/JP2008/064121
Other languages
English (en)
French (fr)
Inventor
Osamu Takaoka
Original Assignee
Sii Nanotechnology Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sii Nanotechnology Inc. filed Critical Sii Nanotechnology Inc.
Priority to US12/733,090 priority Critical patent/US8257887B2/en
Publication of WO2009022603A1 publication Critical patent/WO2009022603A1/ja
Priority to US13/601,028 priority patent/US8815474B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

　このフォトマスクの欠陥修正方法は、フォトマスクの欠陥を修正する方法であって、被修正部の前記欠陥を観察して修正を行うための欠陥情報を取得する観察工程と、前記被修正部に対して、ガスフィールドイオン源を備えるイオンビーム照射系によって発生された、希ガスイオンからなる集束イオンビームを照射して前記欠陥を修正する欠陥修正工程とを備える。
PCT/JP2008/064121 2007-08-10 2008-08-06 フォトマスクの欠陥修正方法および装置 WO2009022603A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/733,090 US8257887B2 (en) 2007-08-10 2008-08-06 Photomask defect correcting method and device
US13/601,028 US8815474B2 (en) 2007-08-10 2012-08-31 Photomask defect correcting method and device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007210362 2007-08-10
JP2007-210362 2007-08-10

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/733,090 A-371-Of-International US8257887B2 (en) 2007-08-10 2008-08-06 Photomask defect correcting method and device
US13/601,028 Continuation-In-Part US8815474B2 (en) 2007-08-10 2012-08-31 Photomask defect correcting method and device

Publications (1)

Publication Number Publication Date
WO2009022603A1 true WO2009022603A1 (ja) 2009-02-19

Family

ID=40350657

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064121 WO2009022603A1 (ja) 2007-08-10 2008-08-06 フォトマスクの欠陥修正方法および装置

Country Status (3)

Country Link
US (1) US8257887B2 (ja)
TW (1) TWI438566B (ja)
WO (1) WO2009022603A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012230148A (ja) * 2011-04-25 2012-11-22 Fujitsu Semiconductor Ltd パターン欠陥修正方法及びパターン欠陥修正装置
DE102012109961A1 (de) 2011-10-20 2013-04-25 Sii Nano Technology Inc. Vorrichtung mit fokussiertem Ionenstrahl
DE102014112044A1 (de) 2013-08-23 2015-02-26 Hitachi High-Tech Science Corporation Reperaturvorrichtung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102108358B1 (ko) * 2013-08-28 2020-05-11 삼성디스플레이 주식회사 유기 발광 표시 장치 리페어 방법
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
JP6960741B2 (ja) * 2017-02-02 2021-11-05 株式会社エスケーエレクトロニクス 位相シフトマスクの欠陥修正方法
KR20200052487A (ko) * 2018-11-06 2020-05-15 삼성전자주식회사 반도체 소자의 제조 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124857A (ja) * 1988-09-30 1989-05-17 Hitachi Ltd イオンビーム加工装置
JPH03122643A (ja) * 1989-10-06 1991-05-24 Fujitsu Ltd イオンビーム加工方法
JP2000231186A (ja) * 1999-02-09 2000-08-22 Nikon Corp 散乱ステンシル型レチクルの修正方法
JP2000347384A (ja) * 1999-06-02 2000-12-15 Toppan Printing Co Ltd 集束イオンビーム修正装置及び欠陥保証方法
JP2001521678A (ja) * 1997-04-16 2001-11-06 マイクリオン コーポレーション 集束粒子ビーム装置を用いるパターン薄膜修理
JP2003228162A (ja) * 2002-02-01 2003-08-15 Seiko Instruments Inc フォトマスクのハーフトーン欠陥修正方法
JP2005189492A (ja) * 2003-12-25 2005-07-14 Sii Nanotechnology Inc 位相シフトマスクの欠陥修正方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4472882B2 (ja) * 2001-01-16 2010-06-02 エスアイアイ・ナノテクノロジー株式会社 マスクの欠陥修正方法
JP2004177682A (ja) * 2002-11-27 2004-06-24 Seiko Instruments Inc 複合荷電粒子ビームによるフォトマスク修正方法及びその装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124857A (ja) * 1988-09-30 1989-05-17 Hitachi Ltd イオンビーム加工装置
JPH03122643A (ja) * 1989-10-06 1991-05-24 Fujitsu Ltd イオンビーム加工方法
JP2001521678A (ja) * 1997-04-16 2001-11-06 マイクリオン コーポレーション 集束粒子ビーム装置を用いるパターン薄膜修理
JP2000231186A (ja) * 1999-02-09 2000-08-22 Nikon Corp 散乱ステンシル型レチクルの修正方法
JP2000347384A (ja) * 1999-06-02 2000-12-15 Toppan Printing Co Ltd 集束イオンビーム修正装置及び欠陥保証方法
JP2003228162A (ja) * 2002-02-01 2003-08-15 Seiko Instruments Inc フォトマスクのハーフトーン欠陥修正方法
JP2005189492A (ja) * 2003-12-25 2005-07-14 Sii Nanotechnology Inc 位相シフトマスクの欠陥修正方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012230148A (ja) * 2011-04-25 2012-11-22 Fujitsu Semiconductor Ltd パターン欠陥修正方法及びパターン欠陥修正装置
DE102012109961A1 (de) 2011-10-20 2013-04-25 Sii Nano Technology Inc. Vorrichtung mit fokussiertem Ionenstrahl
DE102014112044A1 (de) 2013-08-23 2015-02-26 Hitachi High-Tech Science Corporation Reperaturvorrichtung
US9378858B2 (en) 2013-08-23 2016-06-28 Hitachi High-Tech Science Corporation Repair apparatus

Also Published As

Publication number Publication date
TW200935168A (en) 2009-08-16
TWI438566B (zh) 2014-05-21
US8257887B2 (en) 2012-09-04
US20100178601A1 (en) 2010-07-15

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