WO2009008673A3 - Substrate heating apparatus - Google Patents

Substrate heating apparatus Download PDF

Info

Publication number
WO2009008673A3
WO2009008673A3 PCT/KR2008/004060 KR2008004060W WO2009008673A3 WO 2009008673 A3 WO2009008673 A3 WO 2009008673A3 KR 2008004060 W KR2008004060 W KR 2008004060W WO 2009008673 A3 WO2009008673 A3 WO 2009008673A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
thin film
heating unit
heat energy
top surface
Prior art date
Application number
PCT/KR2008/004060
Other languages
French (fr)
Other versions
WO2009008673A2 (en
Inventor
Won Seok Park
Ki Duck Kim
Yong Hyun Lee
Seung Dae Choi
Original Assignee
Jusung Eng Co Ltd
Won Seok Park
Ki Duck Kim
Yong Hyun Lee
Seung Dae Choi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Eng Co Ltd, Won Seok Park, Ki Duck Kim, Yong Hyun Lee, Seung Dae Choi filed Critical Jusung Eng Co Ltd
Priority to CN200880023470A priority Critical patent/CN101689505A/en
Publication of WO2009008673A2 publication Critical patent/WO2009008673A2/en
Publication of WO2009008673A3 publication Critical patent/WO2009008673A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A substrate heating apparatus is provided. The substrate heating apparatus includes a chamber, a substrate supporting unit configured to support at least one substrate where a thin film is formed on the top surface thereof, and at least one heating unit disposed in a region adjacent to the rear surface of the substrate. The heating unit includes a plurality of reflecting units arranged under the substrate, at least one lamp heating unit disposed inside the plurality of reflecting units, and a short- wavelength blocking layer disposed on the lamp heating unit. By providing the lamp heating unit under the substrate where the thin film or pattern is formed on the top surface, and supplying heat energy to the rear surface of the substrate, it is possible to prevent the degradation in efficiency of the thin film, such as degradation of the thin film formed on the top surface of the substrate due to the heat source or the peeling of the thin film due to the temperature deviation between the substrate and the thin film. Furthermore, the heat energy is widely spread out at the central region of the rear surface of the substrate, and the heat energy is focused at the edge region of the substrate, thereby heating the large-sized substrate uniformly.
PCT/KR2008/004060 2007-07-10 2008-07-10 Substrate heating apparatus WO2009008673A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200880023470A CN101689505A (en) 2007-07-10 2008-07-10 Substrate heating apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0069018 2007-07-10
KR1020070069018A KR20090005736A (en) 2007-07-10 2007-07-10 Substrate heating apparatus

Publications (2)

Publication Number Publication Date
WO2009008673A2 WO2009008673A2 (en) 2009-01-15
WO2009008673A3 true WO2009008673A3 (en) 2009-03-05

Family

ID=40229280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004060 WO2009008673A2 (en) 2007-07-10 2008-07-10 Substrate heating apparatus

Country Status (4)

Country Link
KR (1) KR20090005736A (en)
CN (1) CN101689505A (en)
TW (1) TWI433249B (en)
WO (1) WO2009008673A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839854A (en) * 2012-11-23 2014-06-04 北京北方微电子基地设备工艺研究中心有限责任公司 Semiconductor processing device and degas chamber and heating assembly thereof
KR101796626B1 (en) * 2014-05-29 2017-11-13 에이피시스템 주식회사 Apparatus for heating substrate
US10711348B2 (en) * 2015-03-07 2020-07-14 Applied Materials, Inc. Apparatus to improve substrate temperature uniformity
JP6554328B2 (en) 2015-05-29 2019-07-31 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment equipment
US10932323B2 (en) 2015-08-03 2021-02-23 Alta Devices, Inc. Reflector and susceptor assembly for chemical vapor deposition reactor
KR102407266B1 (en) * 2019-10-02 2022-06-13 세메스 주식회사 A support unit, a substrate processing apparatus comprising the same and a substrate processing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920009371B1 (en) * 1990-05-21 1992-10-15 재단법인 한국전자통신연구소 Rapid thermal preocessing apparatus of double-sided heating type
JPH09312269A (en) * 1996-05-23 1997-12-02 Sharp Corp Heating control device
JP2006279008A (en) * 2005-03-02 2006-10-12 Ushio Inc Heater and heating apparatus having the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920009371B1 (en) * 1990-05-21 1992-10-15 재단법인 한국전자통신연구소 Rapid thermal preocessing apparatus of double-sided heating type
JPH09312269A (en) * 1996-05-23 1997-12-02 Sharp Corp Heating control device
JP2006279008A (en) * 2005-03-02 2006-10-12 Ushio Inc Heater and heating apparatus having the same

Also Published As

Publication number Publication date
TWI433249B (en) 2014-04-01
CN101689505A (en) 2010-03-31
TW200933778A (en) 2009-08-01
WO2009008673A2 (en) 2009-01-15
KR20090005736A (en) 2009-01-14

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