CN103839854A - Semiconductor processing device and degas chamber and heating assembly thereof - Google Patents
Semiconductor processing device and degas chamber and heating assembly thereof Download PDFInfo
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- CN103839854A CN103839854A CN201210483509.7A CN201210483509A CN103839854A CN 103839854 A CN103839854 A CN 103839854A CN 201210483509 A CN201210483509 A CN 201210483509A CN 103839854 A CN103839854 A CN 103839854A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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Abstract
The invention discloses a semiconductor processing device and a degas chamber and a heating assembly thereof. The heating assembly comprises a light condensation cover and multiple heating bulbs. The light condensation cover is provided with a plane part which is arranged at the center and an arc-shaped cover edge part which is connected with the circumferential edge of the plane part. The multiple heating bulbs are arranged on the internal surface of the plane part. According to the heating assembly of the embodiment of the invention, light of the multiple heating bulbs can be reflected via the plane part and the arc-shaped cover edge part. With the structure, heating uniformity of the heating assembly is great, and energy emitted by the heating bulbs is reflected into the degas chamber in full effect so that energy of light rays arriving at a substrate in the degas chamber is increased, temperature of the substrate reaches technology temperature more rapidly and enhancement of production efficiency is facilitated.
Description
Technical field
The present invention relates to semiconductor processing technology field, in particular to a kind of semiconductor processing equipment and for degas chamber and the heating component of semiconductor processing equipment.
Background technology
Copper-connection PVD equipment generally, through four technical processs, degass, prerinse, Ta (N) deposition, Cu deposition.Degassing in technique, be mainly that substrate is put into the chamber interior of degassing, and heated substrate to 350 ℃ left and right, to remove on-chip steam and other volatile impurity.
In the time degassing technique, wish that substrate can reach technological temperature as soon as possible on the one hand, can increase thus the substrate number of unit interval processing, enhance productivity.On the other hand, in the process of degassing, guarantee that substrate is heated evenly.If substrate is heated inhomogeneous, can cause the volatile Impurity removal in subregion unclean, affect subsequent technique, the inhomogeneous fragment that even can cause of serious local temperature.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art.
In view of this, the present invention need to provide a kind of heating component for semiconductor processing equipment, and this heating component at least can be under the prerequisite of assurance heating uniformity, and shortening substrate reaches the time of technological temperature.
Another object of the present invention is to provide a kind of chamber that degass for semiconductor processing equipment with this heating component.
Another object of the present invention is to provide a kind of semiconductor processing equipment of this chamber that degass.
According to a first aspect of the invention, provide a kind of heating component for semiconductor processing equipment, having comprised: snoot, described snoot has the arc-shaped cover on the peripheral edge edge that is positioned at central planar portions and is connected to described planar portions along portion; And multiple heating bulbs, described multiple heating bulbs are located on the inner surface of described planar portions.
According to an embodiment of the invention for the heating component of semiconductor processing equipment, heating component can reflect by planar portions and arc-shaped cover the light of multiple heating bulbs along portion, this structure makes the heating uniformity of heating component better, the energy that heating bulb sends is reflexed to and degass in chamber by full effect, increase and arrived the substrate glazed thread energy degassing in chamber, make substrate reach sooner technological temperature, be conducive to enhance productivity.
According to one embodiment of present invention, described arc-shaped cover is in the arc-shaped along the cross-sectional configurations of portion.
According to one embodiment of present invention, described planar portions is provided with multiple installing holes and multiple circular hole, and described installing hole is used for locating described snoot, and described heating bulb is positioned in described circular hole.
According to one embodiment of present invention, described snoot is configured to by opaque material.
According to one embodiment of present invention, described snoot is one-body molded by aluminium.According to one embodiment of present invention, the described inner surface of described snoot is polished to Ra1.6 or following.
According to a second aspect of the invention, provide a kind of chamber that degass for semiconductor processing equipment, having comprised: chamber body, described chamber body has the upper end of opening; Quartz window, described quartz window covers described opening; Upper outlet body, described upper outlet body is located on described quartz window, and is configured to heated chamber with described quartz window; And heating component as described in any one in the above embodiment of the present invention, described heating component is removably connected on the inner surface of described upper outlet body.
According to an embodiment of the invention for the chamber that degass of semiconductor processing equipment, the heating component of chamber of degassing can reflect by planar portions and arc-shaped cover the light of multiple heating bulbs along portion, this structure makes the heating uniformity of heating component better, the energy that heating bulb sends is reflexed to and degass in chamber by full effect, increase and arrived the substrate glazed thread energy degassing in chamber, make substrate reach sooner technological temperature, be conducive to enhance productivity.In addition, according to the chamber that degass for semiconductor processing equipment of the embodiment of the present invention, the structure of the chamber that degass is not carried out to larger change, be easy to realize, workable.
According to one embodiment of present invention, the lower end of described snoot and described quartz window are at a distance of predetermined distance.
According to one embodiment of present invention, in described chamber body and described upper outlet body, be formed with respectively cooling circuit.
According to a third aspect of the invention we, provide a kind of semiconductor processing equipment, this semiconductor processing equipment comprises the chamber that degass described in the above embodiment of the present invention.
Semiconductor processing equipment according to an embodiment of the invention, the heating component of the chamber that degass of this equipment can reflect by planar portions and arc-shaped cover the light of multiple heating bulbs along portion, this structure makes the heating uniformity of heating component better, the energy that heating bulb sends is reflexed to and degass in chamber by full effect, increase and arrived the substrate glazed thread energy degassing in chamber, make substrate reach sooner technological temperature, be conducive to enhance productivity.In addition, according to the chamber that degass for semiconductor processing equipment of the embodiment of the present invention, the structure of the chamber that degass is not carried out to larger change, be easy to realize, workable.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 has shown according to the structural representation of the chamber that degass for semiconductor processing equipment of the embodiment of the present invention; And
Fig. 2 has shown according to the perspective view of the snoot of the heating component for semiconductor processing equipment of the embodiment of the present invention.。
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
As shown in Figure 1 and Figure 2, according to the heating component for semiconductor processing equipment of the embodiment of the present invention, comprising: snoot 10 and multiple heating bulb 20.
Particularly, as shown in Figure 2, snoot 10 can have the arc-shaped cover on the peripheral edge edge that is positioned at central planar portions 11 and is connected to planar portions 11 along portion 12.In other words, snoot 10 is to be formed along portion's 12 structures by planar portions 11 and the arc-shaped cover of the circumferential edge that is connected to planar portions 11, and arc-shaped cover can be ringwise along portion 12.
According to an embodiment of the invention for the heating component of semiconductor processing equipment, heating component can reflect by planar portions 11 and arc-shaped cover the light of multiple heating bulbs 20 along portion 12, this structure makes the heating uniformity of heating component better, the energy that heating bulb 20 sends is reflexed to and degass in chamber by full effect, increase and arrived the substrate glazed thread energy degassing in chamber, make substrate reach sooner technological temperature, be conducive to enhance productivity.
It should be noted that, can be for degassing in chamber in copper-connection PVD and TSC PVD according to the heating component of the embodiment of the present invention.
As shown in Figure 1, according to one embodiment of present invention, for the better effects if that arc-shaped cover is reflected along portion 12, can arc-shaped cover is in the arc-shaped along the cross-sectional configurations of portion 12.Be understandable that, arc-shaped cover is not defined as circular arc along the cross section of portion 12, and for example, arc-shaped cover can be also linear pattern along the cross section of portion 12, its can with 11 one-tenth predetermined angulars of planar portions.
Further, in planar portions 11, can be provided with multiple installing holes 14 and multiple circular hole 13.
Particularly, in order to facilitate being connected of heating component and the chamber that degass, in planar portions 11, can be provided with multiple installing holes 14.Thus, installing hole 14 can coordinate and snoot 10 can be positioned at and be degassed on chamber by bolt 30 with bolt 30.
As shown in Figure 1, for the chamber that degass of semiconductor processing equipment, comprising according to an embodiment of the invention: chamber body 40, quartz window 50, upper outlet body 60 and heating component as described in the above embodiment the present invention.
Particularly, chamber body 40 can have the upper end of opening 41.In other words, the upper end of chamber body 40 can have opening 41.
Quartz window 50 can cover opening 41, opening 41 is sealed by quartz window 50.
Heating component is removably connected on the inner surface of upper outlet body 60, so that the heating bulb 20 of heating component can see through quartz window 50 to irradiating in heated chamber 70.In heated chamber 70, for example, on the bottom surface of heated chamber 70, can be provided with thimble 80, so that substrate 90 is supported, make substrate 90 in heated chamber 70, be conducive to heated position.
According to an embodiment of the invention for the chamber that degass of semiconductor processing equipment, the heating component of chamber of degassing can reflect by planar portions 11 and arc-shaped cover the light of multiple heating bulbs 20 along portion 12, this structure makes the heating uniformity of heating component better, the energy that heating bulb 20 sends is reflexed to and degass in chamber by full effect, increase and arrived the substrate glazed thread energy degassing in chamber, make substrate reach sooner technological temperature, be conducive to enhance productivity.In addition, according to the chamber that degass for semiconductor processing equipment of the embodiment of the present invention, the structure of the chamber that degass is not carried out to larger change, be easy to realize, workable.
According to one embodiment of present invention, the lower end of snoot 10 and quartz window 50 can be at a distance of predetermined distances.Thus, can facilitate the multiple heating bulbs 20 in snoot 10 to dispel the heat.Can avoid because the lower end of snoot 10 contacts with quartz window 50 while being combined into confined space, this confined space excess Temperature, exerts an influence to heating bulb 20 and quartz window 50.
Preferably, overheated with the chamber wall of the chamber that degass in order to prevent heating component, in chamber body 40 and upper outlet body 60, can be formed with respectively cooling circuit 100.
Semiconductor processing equipment according to an embodiment of the invention, comprises the chamber that degass described in the above embodiment of the present invention.
Semiconductor processing equipment according to an embodiment of the invention, the heating component of the chamber that degass of this equipment can reflect by planar portions 11 and arc-shaped cover the light of multiple heating bulbs 20 along portion 12, this structure makes the heating uniformity of heating component better, the energy that heating bulb 20 sends is reflexed to and degass in chamber by full effect, increase and arrived the substrate glazed thread energy degassing in chamber, make substrate reach sooner technological temperature, be conducive to enhance productivity.In addition, according to the chamber that degass for semiconductor processing equipment of the embodiment of the present invention, the structure of the chamber that degass is not carried out to larger change, be easy to realize, workable.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that, in the situation that not departing from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (10)
1. for a heating component for semiconductor processing equipment, it is characterized in that, comprising:
Snoot, described snoot has the arc-shaped cover on the peripheral edge edge that is positioned at central planar portions and is connected to described planar portions along portion; And
Multiple heating bulbs, described multiple heating bulbs are located on the inner surface of described planar portions.
2. heating component according to claim 1, is characterized in that, described arc-shaped cover is in the arc-shaped along the cross-sectional configurations of portion.
3. heating component according to claim 2, is characterized in that, described planar portions is provided with multiple installing holes and multiple circular hole, and described installing hole is used for locating described snoot, and described heating bulb is positioned in described circular hole.
4. heating component according to claim 1, is characterized in that, described snoot is configured to by opaque material.
5. heating component according to claim 4, is characterized in that, described snoot is one-body molded by aluminium.
6. heating component according to claim 1, is characterized in that, the described inner surface of described snoot is polished to Ra1.6 or following.
7. for the chamber that degass of semiconductor processing equipment, it is characterized in that, comprising:
Chamber body, described chamber body has the upper end of opening;
Quartz window, described quartz window covers described opening;
Upper outlet body, described upper outlet body is located on described quartz window, and is configured to heated chamber with described quartz window; And
Heating component as described in any one in claim 1-6, described heating component is removably mounted on the inner surface of described upper outlet body.
8. the chamber that degass according to claim 6, is characterized in that, the lower end of described snoot and described quartz window are at a distance of predetermined distance.
9. the chamber that degass according to claim 8, is characterized in that, in described chamber body and described upper outlet body, is formed with respectively cooling circuit.
10. a semiconductor processing equipment, is characterized in that, comprises as the chamber that degass as described in arbitrary in claim 7-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210483509.7A CN103839854A (en) | 2012-11-23 | 2012-11-23 | Semiconductor processing device and degas chamber and heating assembly thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210483509.7A CN103839854A (en) | 2012-11-23 | 2012-11-23 | Semiconductor processing device and degas chamber and heating assembly thereof |
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| Publication Number | Publication Date |
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| CN103839854A true CN103839854A (en) | 2014-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210483509.7A Pending CN103839854A (en) | 2012-11-23 | 2012-11-23 | Semiconductor processing device and degas chamber and heating assembly thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807214A (en) * | 2017-04-27 | 2018-11-13 | 北京北方华创微电子装备有限公司 | One kind removing device of air |
| CN109420947A (en) * | 2017-08-22 | 2019-03-05 | 株式会社迪思科 | Grinding attachment |
| CN110349885A (en) * | 2018-04-06 | 2019-10-18 | 细美事有限公司 | Substrate-holding units and substrate board treatment with the substrate-holding units |
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Patent Citations (8)
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| JPH10106724A (en) * | 1996-10-02 | 1998-04-24 | Nippon Pillar Packing Co Ltd | Resistance exothermal heater and semiconductor heat treatment equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807214A (en) * | 2017-04-27 | 2018-11-13 | 北京北方华创微电子装备有限公司 | One kind removing device of air |
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| CN109420947A (en) * | 2017-08-22 | 2019-03-05 | 株式会社迪思科 | Grinding attachment |
| CN110349885A (en) * | 2018-04-06 | 2019-10-18 | 细美事有限公司 | Substrate-holding units and substrate board treatment with the substrate-holding units |
| CN110349885B (en) * | 2018-04-06 | 2023-08-08 | 细美事有限公司 | Substrate supporting unit and substrate processing apparatus having the same |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Application publication date: 20140604 |