WO2009008202A1 - 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 - Google Patents
窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 Download PDFInfo
- Publication number
- WO2009008202A1 WO2009008202A1 PCT/JP2008/057488 JP2008057488W WO2009008202A1 WO 2009008202 A1 WO2009008202 A1 WO 2009008202A1 JP 2008057488 W JP2008057488 W JP 2008057488W WO 2009008202 A1 WO2009008202 A1 WO 2009008202A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nitride semiconductor
- light emitting
- emitting element
- semiconductor light
- active layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 150000004767 nitrides Chemical class 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910002601 GaN Inorganic materials 0.000 abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08740558A EP2056367A1 (en) | 2007-07-11 | 2008-04-17 | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element |
CN2008800007766A CN101548400B (zh) | 2007-07-11 | 2008-04-17 | 氮化物半导体发光元件和其形成方法 |
US12/440,643 US7973322B2 (en) | 2007-07-11 | 2008-04-17 | Nitride semiconductor light emitting device and method for forming the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007182435A JP2009021361A (ja) | 2007-07-11 | 2007-07-11 | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
JP2007-182435 | 2007-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009008202A1 true WO2009008202A1 (ja) | 2009-01-15 |
Family
ID=40228387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/057488 WO2009008202A1 (ja) | 2007-07-11 | 2008-04-17 | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7973322B2 (ja) |
EP (1) | EP2056367A1 (ja) |
JP (1) | JP2009021361A (ja) |
KR (1) | KR20100031492A (ja) |
CN (1) | CN101548400B (ja) |
TW (1) | TW200903864A (ja) |
WO (1) | WO2009008202A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101826581A (zh) * | 2009-03-02 | 2010-09-08 | 住友电气工业株式会社 | 氮化镓类半导体光元件及其制造方法、外延晶片 |
CN102034910A (zh) * | 2009-09-30 | 2011-04-27 | 住友电气工业株式会社 | Iii族氮化物半导体光元件、外延衬底及iii族氮化物半导体发光元件的制作方法 |
US8598599B2 (en) | 2010-03-30 | 2013-12-03 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010118647A (ja) * | 2008-10-17 | 2010-05-27 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、窒化物系半導体発光素子を作製する方法、及び発光装置 |
JP2011023537A (ja) | 2009-07-15 | 2011-02-03 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体素子、エピタキシャル基板、及びiii族窒化物半導体素子を作製する方法 |
JP4905514B2 (ja) * | 2009-07-15 | 2012-03-28 | 住友電気工業株式会社 | 窒化物系半導体発光素子 |
JP5635246B2 (ja) * | 2009-07-15 | 2014-12-03 | 住友電気工業株式会社 | Iii族窒化物半導体光素子及びエピタキシャル基板 |
JP2010212651A (ja) * | 2009-09-08 | 2010-09-24 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体素子、エピタキシャル基板、及びiii族窒化物半導体素子を作製する方法 |
KR100993072B1 (ko) * | 2010-01-11 | 2010-11-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
JP2011146650A (ja) * | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | GaN系半導体発光素子およびその製造方法 |
JP5349420B2 (ja) * | 2010-08-04 | 2013-11-20 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP5361925B2 (ja) * | 2011-03-08 | 2013-12-04 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
TWI524551B (zh) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI535055B (zh) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI499080B (zh) | 2012-11-19 | 2015-09-01 | Genesis Photonics Inc | 氮化物半導體結構及半導體發光元件 |
CN103972340B (zh) * | 2013-01-25 | 2018-06-08 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
WO2014140370A1 (en) * | 2013-03-15 | 2014-09-18 | Soitec | Semiconductor light emitting structure having active region comprising ingan and method of its fabrication |
FR3003397B1 (fr) * | 2013-03-15 | 2016-07-22 | Soitec Silicon On Insulator | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
TWI593135B (zh) | 2013-03-15 | 2017-07-21 | 索泰克公司 | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 |
CN104121497A (zh) * | 2013-04-26 | 2014-10-29 | 光明半导体(天津)有限公司 | 照明装置 |
JP6641335B2 (ja) * | 2017-10-27 | 2020-02-05 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
Citations (8)
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JPH10135576A (ja) | 1996-02-23 | 1998-05-22 | Fujitsu Ltd | 半導体発光素子、光半導体素子、発光ダイオード及び表示装置 |
JP2000101140A (ja) * | 1998-09-22 | 2000-04-07 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子の製造方法 |
JP2000133883A (ja) * | 1998-10-22 | 2000-05-12 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP2001203384A (ja) * | 2000-01-18 | 2001-07-27 | Sharp Corp | 窒化物半導体発光素子 |
JP2007036113A (ja) * | 2005-07-29 | 2007-02-08 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物の製造方法 |
JP2007103774A (ja) * | 2005-10-06 | 2007-04-19 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
WO2007063920A1 (ja) * | 2005-11-30 | 2007-06-07 | Rohm Co., Ltd. | 窒化ガリウム半導体発光素子 |
Family Cites Families (4)
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JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶GaN基板の製造方法 |
JP4389723B2 (ja) * | 2004-02-17 | 2009-12-24 | 住友電気工業株式会社 | 半導体素子を形成する方法 |
US7727873B2 (en) * | 2005-07-29 | 2010-06-01 | Showa Denko K.K. | Production method of gallium nitride-based compound semiconductor multilayer structure |
US7951617B2 (en) * | 2005-10-06 | 2011-05-31 | Showa Denko K.K. | Group III nitride semiconductor stacked structure and production method thereof |
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2007
- 2007-07-11 JP JP2007182435A patent/JP2009021361A/ja active Pending
-
2008
- 2008-04-17 WO PCT/JP2008/057488 patent/WO2009008202A1/ja active Application Filing
- 2008-04-17 KR KR1020097004685A patent/KR20100031492A/ko not_active Application Discontinuation
- 2008-04-17 CN CN2008800007766A patent/CN101548400B/zh not_active Expired - Fee Related
- 2008-04-17 US US12/440,643 patent/US7973322B2/en active Active
- 2008-04-17 EP EP08740558A patent/EP2056367A1/en not_active Withdrawn
- 2008-04-24 TW TW097115123A patent/TW200903864A/zh unknown
Patent Citations (8)
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JPH10135576A (ja) | 1996-02-23 | 1998-05-22 | Fujitsu Ltd | 半導体発光素子、光半導体素子、発光ダイオード及び表示装置 |
JP2000101140A (ja) * | 1998-09-22 | 2000-04-07 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子の製造方法 |
JP2000133883A (ja) * | 1998-10-22 | 2000-05-12 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP2001203384A (ja) * | 2000-01-18 | 2001-07-27 | Sharp Corp | 窒化物半導体発光素子 |
JP2007036113A (ja) * | 2005-07-29 | 2007-02-08 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物の製造方法 |
JP2007103774A (ja) * | 2005-10-06 | 2007-04-19 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
WO2007063920A1 (ja) * | 2005-11-30 | 2007-06-07 | Rohm Co., Ltd. | 窒化ガリウム半導体発光素子 |
Non-Patent Citations (3)
Title |
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APPLIED PHYSICS LETTER, vol. 85, no. 22, 2004, pages 5143 |
CHAKRABORTY A. ET AL.: "Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 11, 2006, pages 8659 - 8661, XP001517998 * |
KO T.S. ET AL.: "Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths", APPLIED PHYSICS LETTERS, vol. 90, no. 18, 30 April 2007 (2007-04-30), pages 181122-1 - 181122-3, XP012094465 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101826581A (zh) * | 2009-03-02 | 2010-09-08 | 住友电气工业株式会社 | 氮化镓类半导体光元件及其制造方法、外延晶片 |
CN102034910A (zh) * | 2009-09-30 | 2011-04-27 | 住友电气工业株式会社 | Iii族氮化物半导体光元件、外延衬底及iii族氮化物半导体发光元件的制作方法 |
US8598599B2 (en) | 2010-03-30 | 2013-12-03 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
US20100059759A1 (en) | 2010-03-11 |
CN101548400A (zh) | 2009-09-30 |
US7973322B2 (en) | 2011-07-05 |
KR20100031492A (ko) | 2010-03-22 |
JP2009021361A (ja) | 2009-01-29 |
EP2056367A1 (en) | 2009-05-06 |
TW200903864A (en) | 2009-01-16 |
CN101548400B (zh) | 2011-12-07 |
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