FR3003397B1 - Structures semi-conductrices dotées de régions actives comprenant de l'INGAN - Google Patents
Structures semi-conductrices dotées de régions actives comprenant de l'INGANInfo
- Publication number
- FR3003397B1 FR3003397B1 FR1300823A FR1300823A FR3003397B1 FR 3003397 B1 FR3003397 B1 FR 3003397B1 FR 1300823 A FR1300823 A FR 1300823A FR 1300823 A FR1300823 A FR 1300823A FR 3003397 B1 FR3003397 B1 FR 3003397B1
- Authority
- FR
- France
- Prior art keywords
- active regions
- semiconductor structures
- regions including
- including ingan
- ingan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103109801A TWI648872B (zh) | 2013-03-15 | 2014-03-14 | 具有包含InGaN之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置 |
DE112014001352.8T DE112014001352T5 (de) | 2013-03-15 | 2014-03-17 | Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten |
JP2015562260A JP2016513879A (ja) | 2013-03-15 | 2014-03-17 | InGaNを含んでいる活性領域を有している半導体発光構造及びその製造の方法 |
JP2015562261A JP2016517627A (ja) | 2013-03-15 | 2014-03-17 | InGaNを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス |
JP2015562262A JP2016513880A (ja) | 2013-03-15 | 2014-03-17 | InGaNを含んでいる活性領域を有している発光ダイオード半導体構造 |
KR1020157026743A KR20150132204A (ko) | 2013-03-15 | 2014-03-17 | InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치 |
CN201480015148.0A CN105051921A (zh) | 2013-03-15 | 2014-03-17 | 具有包含InGaN的有源区的发光二极管半导体结构体 |
KR1020157026427A KR102120682B1 (ko) | 2013-03-15 | 2014-03-17 | InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치 |
PCT/EP2014/055316 WO2014140371A1 (fr) | 2013-03-15 | 2014-03-17 | Structures de semi-conducteur ayant des régions actives comprenant de l'ingan, procédés de formation de telles structures de semi-conducteur, et dispositifs électroluminescents formés à partir de telles structures de semi-conducteur |
CN201480015241.1A CN105051920A (zh) | 2013-03-15 | 2014-03-17 | 具有包含InGaN的有源区的半导体发光结构体及其制造方法 |
PCT/EP2014/055318 WO2014140372A1 (fr) | 2013-03-15 | 2014-03-17 | Structures semi-conductrices de diodes électroluminescentes ayant des régions actives comprenant de l'ingan |
KR1020157026564A KR20150130331A (ko) | 2013-03-15 | 2014-03-17 | Ingan을 포함하는 활성 영역을 가지는 발광 다이오드 반도체 구조 |
PCT/EP2014/055314 WO2014140370A1 (fr) | 2013-03-15 | 2014-03-17 | Structure électroluminescente semi-conductrice ayant une région active comprenant ingan, et son procédé de fabrication |
CN201480014065.XA CN105051918A (zh) | 2013-03-15 | 2014-03-17 | 具有包含InGaN的有源区的半导体结构体、形成此类半导体结构体的方法以及由此类半导体结构体形成的发光器件 |
DE112014001385.4T DE112014001385T5 (de) | 2013-03-15 | 2014-03-17 | Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung |
DE112014001423.0T DE112014001423T5 (de) | 2013-03-15 | 2014-03-17 | Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361788441P | 2013-03-15 | 2013-03-15 | |
US201361789792P | 2013-03-15 | 2013-03-15 | |
US201361790085P | 2013-03-15 | 2013-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3003397A1 FR3003397A1 (fr) | 2014-09-19 |
FR3003397B1 true FR3003397B1 (fr) | 2016-07-22 |
Family
ID=49546439
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1300823A Active FR3003397B1 (fr) | 2013-03-15 | 2013-04-08 | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
FR1300860A Active FR3003396B1 (fr) | 2013-03-15 | 2013-04-11 | Structures semi-conductrices dotees de regions actives comprenant de l'ingan |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1300860A Active FR3003396B1 (fr) | 2013-03-15 | 2013-04-11 | Structures semi-conductrices dotees de regions actives comprenant de l'ingan |
Country Status (2)
Country | Link |
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US (2) | US9117955B2 (fr) |
FR (2) | FR3003397B1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101854419B1 (ko) | 2010-03-04 | 2018-05-03 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | c-방향으로 +/-15도 미만의 미스컷들을 갖는 m-면 기판들 위의 준극성 Ⅲ―질화물 광전자 소자들 |
US9343626B2 (en) | 2013-03-15 | 2016-05-17 | Soitec | Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures |
TWI593135B (zh) | 2013-03-15 | 2017-07-21 | 索泰克公司 | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 |
FR3003397B1 (fr) * | 2013-03-15 | 2016-07-22 | Soitec Silicon On Insulator | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
CN105047772B (zh) * | 2015-06-08 | 2018-03-23 | 中国科学院半导体研究所 | 绿光led芯片外延层的结构及生长方法 |
TWI562403B (en) * | 2015-11-12 | 2016-12-11 | Playnitride Inc | Semiconductor light-emitting device |
US10693038B2 (en) * | 2017-11-22 | 2020-06-23 | Epistar Corporation | Semiconductor device |
CN112186080B (zh) * | 2020-09-30 | 2021-10-08 | 华灿光电(苏州)有限公司 | 发光二极管外延片的生长方法 |
CN112467004B (zh) * | 2020-10-31 | 2022-06-07 | 扬州大学 | 一种包含电子存储层的GaN基LED外延结构及其生长方法 |
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FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US6600175B1 (en) | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
FR2755537B1 (fr) | 1996-11-05 | 1999-03-05 | Commissariat Energie Atomique | Procede de fabrication d'un film mince sur un support et structure ainsi obtenue |
JP3679914B2 (ja) * | 1997-02-12 | 2005-08-03 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
FR2767416B1 (fr) | 1997-08-12 | 1999-10-01 | Commissariat Energie Atomique | Procede de fabrication d'un film mince de materiau solide |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
FR2795865B1 (fr) | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'un film mince utilisant une mise sous pression |
FR2818010B1 (fr) | 2000-12-08 | 2003-09-05 | Commissariat Energie Atomique | Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses |
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JP2009021361A (ja) * | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
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KR20110034689A (ko) * | 2008-08-29 | 2011-04-05 | 가부시끼가이샤 도시바 | 반도체 장치 |
WO2010036622A1 (fr) | 2008-09-24 | 2010-04-01 | S.O.I. Tec Silicon On Insulator Technologies | Procédés de formation de couches relaxées de matériaux semi-conducteurs, structures semi-conductrices, dispositifs et substrats techniques les comprenant |
JP5077303B2 (ja) * | 2008-10-07 | 2012-11-21 | 住友電気工業株式会社 | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
US8278193B2 (en) | 2008-10-30 | 2012-10-02 | Soitec | Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same |
US8227791B2 (en) * | 2009-01-23 | 2012-07-24 | Invenlux Limited | Strain balanced light emitting devices |
CN102484142A (zh) * | 2009-08-21 | 2012-05-30 | 加利福尼亚大学董事会 | 通过具有错配位错的部分或完全驰豫氮化铝铟镓层的半极性氮化物量子阱中的各向异性应变控制 |
US8975165B2 (en) | 2011-02-17 | 2015-03-10 | Soitec | III-V semiconductor structures with diminished pit defects and methods for forming the same |
US8148252B1 (en) | 2011-03-02 | 2012-04-03 | S.O.I. Tec Silicon On Insulator Technologies | Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods |
US8471243B1 (en) | 2012-01-31 | 2013-06-25 | Soitec | Photoactive devices with improved distribution of charge carriers, and methods of forming same |
TWI593135B (zh) * | 2013-03-15 | 2017-07-21 | 索泰克公司 | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 |
US9343626B2 (en) * | 2013-03-15 | 2016-05-17 | Soitec | Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures |
FR3003397B1 (fr) * | 2013-03-15 | 2016-07-22 | Soitec Silicon On Insulator | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
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2013
- 2013-04-08 FR FR1300823A patent/FR3003397B1/fr active Active
- 2013-04-11 FR FR1300860A patent/FR3003396B1/fr active Active
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2014
- 2014-03-14 US US14/211,403 patent/US9117955B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
FR3003396B1 (fr) | 2016-07-22 |
US20150333219A1 (en) | 2015-11-19 |
US9117955B2 (en) | 2015-08-25 |
FR3003397A1 (fr) | 2014-09-19 |
FR3003396A1 (fr) | 2014-09-19 |
US9397258B2 (en) | 2016-07-19 |
US20140264265A1 (en) | 2014-09-18 |
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