WO2009001514A1 - メモリコントローラ、不揮発性記憶装置、ファイルシステム、不揮発性記憶システム、データ書き込み方法及びデータ書き込みプログラム - Google Patents

メモリコントローラ、不揮発性記憶装置、ファイルシステム、不揮発性記憶システム、データ書き込み方法及びデータ書き込みプログラム Download PDF

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Publication number
WO2009001514A1
WO2009001514A1 PCT/JP2008/001459 JP2008001459W WO2009001514A1 WO 2009001514 A1 WO2009001514 A1 WO 2009001514A1 JP 2008001459 W JP2008001459 W JP 2008001459W WO 2009001514 A1 WO2009001514 A1 WO 2009001514A1
Authority
WO
WIPO (PCT)
Prior art keywords
nonvolatile memory
data writing
memory device
file system
writing method
Prior art date
Application number
PCT/JP2008/001459
Other languages
English (en)
French (fr)
Inventor
Shigekazu Kogita
Takuji Maeda
Hiroki Etoh
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2009520296A priority Critical patent/JPWO2009001514A1/ja
Priority to US12/664,954 priority patent/US20100180072A1/en
Publication of WO2009001514A1 publication Critical patent/WO2009001514A1/ja

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

　ファイルシステム１０５と不揮発性記憶装置１０１は、あらかじめお互いのクラスタサイズと論理ブロックサイズを通知し合う。書き込みの際、不揮発性記憶装置の論理ブロックの中で、どのファイルシステムのクラスタが破棄してよいデータかをファイルシステムが不揮発性記憶装置に対し通知する。これにより不揮発性記憶装置が書き込みの際、データのコピーを避けることができ、不要なファイルのデータを保持し続けることがなくなる。
PCT/JP2008/001459 2007-06-22 2008-06-09 メモリコントローラ、不揮発性記憶装置、ファイルシステム、不揮発性記憶システム、データ書き込み方法及びデータ書き込みプログラム WO2009001514A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009520296A JPWO2009001514A1 (ja) 2007-06-22 2008-06-09 メモリコントローラ、不揮発性記憶装置、ファイルシステム、不揮発性記憶システム、データ書き込み方法及びデータ書き込みプログラム
US12/664,954 US20100180072A1 (en) 2007-06-22 2008-06-09 Memory controller, nonvolatile memory device, file system, nonvolatile memory system, data writing method and data writing program

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-165385 2007-06-22
JP2007165385 2007-06-22

Publications (1)

Publication Number Publication Date
WO2009001514A1 true WO2009001514A1 (ja) 2008-12-31

Family

ID=40185341

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001459 WO2009001514A1 (ja) 2007-06-22 2008-06-09 メモリコントローラ、不揮発性記憶装置、ファイルシステム、不揮発性記憶システム、データ書き込み方法及びデータ書き込みプログラム

Country Status (3)

Country Link
US (1) US20100180072A1 (ja)
JP (1) JPWO2009001514A1 (ja)
WO (1) WO2009001514A1 (ja)

Cited By (2)

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WO2011074712A1 (en) * 2009-12-18 2011-06-23 Kabushiki Kaisha Toshiba Semiconductor storage device and personal computer
JP2018502343A (ja) * 2015-12-03 2018-01-25 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． データを書き込むようにソリッドステートディスクを制御するためのアレイコントローラ、ソリッドステートディスクおよび方法

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TWI503841B (zh) * 2013-04-26 2015-10-11 Phison Electronics Corp 寫入方法、記憶體控制器與記憶體儲存裝置
US9535628B2 (en) * 2013-10-10 2017-01-03 Apple Inc. Memory system with shared file system
US9483413B2 (en) 2014-10-24 2016-11-01 Samsung Electronics Co., Ltd. Nonvolatile memory devices and methods of controlling the same
US10635331B2 (en) * 2017-07-05 2020-04-28 Western Digital Technologies, Inc. Distribution of logical-to-physical address entries across bank groups
US11144206B2 (en) * 2019-11-01 2021-10-12 EMC IP Holding Company LLC Method and system for sharing data reduction metadata with storage systems

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JPH1165941A (ja) * 1997-08-11 1999-03-09 Sony Corp 記憶装置
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JPH0764831A (ja) * 1993-08-23 1995-03-10 Matsushita Electric Ind Co Ltd データ記憶装置
JPH0997314A (ja) * 1995-09-28 1997-04-08 Canon Inc Ｉｃカード装置
JP3692313B2 (ja) * 2001-06-28 2005-09-07 松下電器産業株式会社 不揮発性メモリの制御方法
US7028154B2 (en) * 2002-06-18 2006-04-11 Hewlett-Packard Development Company, L.P. Procedure to reduce copy time for data backup from short-term to long-term memory
JP2005085081A (ja) * 2003-09-10 2005-03-31 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリを記録媒体とするデータ記録装置
JP4661086B2 (ja) * 2004-05-24 2011-03-30 パナソニック株式会社 不揮発性記憶装置および不揮発性メモリの消去方法と書込み方法
US8607016B2 (en) * 2004-07-21 2013-12-10 Sandisk Technologies Inc. FAT analysis for optimized sequential cluster management
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JP2006155461A (ja) * 2004-12-01 2006-06-15 Sony Corp 情報処理装置、情報処理方法、並びにプログラム
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KR100706808B1 (ko) * 2006-02-03 2007-04-12 삼성전자주식회사 쓰기 버퍼로서 동작하는 불 휘발성 메모리를 구비한 데이터저장 장치 및 그것의 블록 회수 방법
KR100874702B1 (ko) * 2006-10-02 2008-12-18 삼성전자주식회사 플래시 메모리 파일 시스템을 효율적으로 관리하기 위한장치 드라이버 및 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09212411A (ja) * 1996-02-06 1997-08-15 Tokyo Electron Ltd メモリシステム
JPH1165941A (ja) * 1997-08-11 1999-03-09 Sony Corp 記憶装置
JP2003044351A (ja) * 2001-07-27 2003-02-14 Matsushita Electric Ind Co Ltd フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法
WO2004077447A1 (ja) * 2003-02-28 2004-09-10 Fujitsu Limited フラッシュメモリ及びメモリ制御方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074712A1 (en) * 2009-12-18 2011-06-23 Kabushiki Kaisha Toshiba Semiconductor storage device and personal computer
US9229863B2 (en) 2009-12-18 2016-01-05 Kabushiki Kaisha Toshiba Semiconductor storage device
JP2018502343A (ja) * 2015-12-03 2018-01-25 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． データを書き込むようにソリッドステートディスクを制御するためのアレイコントローラ、ソリッドステートディスクおよび方法
US10761731B2 (en) 2015-12-03 2020-09-01 Huawei Technologies Co., Ltd. Array controller, solid state disk, and method for controlling solid state disk to write data

Also Published As

Publication number Publication date
US20100180072A1 (en) 2010-07-15
JPWO2009001514A1 (ja) 2010-08-26

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