WO2008140083A1 - Photoresist developing solution - Google Patents

Photoresist developing solution Download PDF

Info

Publication number
WO2008140083A1
WO2008140083A1 PCT/JP2008/058774 JP2008058774W WO2008140083A1 WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1 JP 2008058774 W JP2008058774 W JP 2008058774W WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1
Authority
WO
WIPO (PCT)
Prior art keywords
developing solution
mass
hydrogen atom
photoresist developing
integer
Prior art date
Application number
PCT/JP2008/058774
Other languages
French (fr)
Japanese (ja)
Inventor
Seiji Tono
Yasutaka Natsuka
Original Assignee
Tokuyama Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corporation filed Critical Tokuyama Corporation
Priority to KR1020097020596A priority Critical patent/KR101084454B1/en
Priority to CN2008800123729A priority patent/CN101657761B/en
Publication of WO2008140083A1 publication Critical patent/WO2008140083A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

[PROBLEMS] To provide a developing solution which can be used suitably for the development of a thick resist comprising a chemically amplified resist. [MEANS FOR SOLVING PROBLEMS] Disclosed is a photoresist developing solution comprising an aqueous quaternary ammonium compound solution containing an anionic surfactant and a cationic surfactant, wherein the anionic surfactant is represented by the formula (1) and is contained in an amount of 0.1 to 5% by mass and the cationic surfactant is contained in an amount of 0.01 to 2% by mass relative to 100% by mass of the total mass of the photoresist developing solution. (1) wherein R1 represents a hydrogen atom or a methyl group; R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; A represents an alkylene group having 1 to 4 carbon atoms, provided that AO's may be the same as each other or may be a combination of different two or more groups in the molecule; p is an integer of 1 to 3; m is an integer of 5 to 30; and M represents a hydrogen atom or an ammonium ion.
PCT/JP2008/058774 2007-05-16 2008-05-13 Photoresist developing solution WO2008140083A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097020596A KR101084454B1 (en) 2007-05-16 2008-05-13 Photoresist developing solution
CN2008800123729A CN101657761B (en) 2007-05-16 2008-05-13 Photoresist developing solution

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007130157 2007-05-16
JP2007-130157 2007-05-16

Publications (1)

Publication Number Publication Date
WO2008140083A1 true WO2008140083A1 (en) 2008-11-20

Family

ID=40002273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058774 WO2008140083A1 (en) 2007-05-16 2008-05-13 Photoresist developing solution

Country Status (5)

Country Link
JP (1) JP5052410B2 (en)
KR (1) KR101084454B1 (en)
CN (1) CN101657761B (en)
TW (1) TWI401544B (en)
WO (1) WO2008140083A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (en) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 Developer solution component
WO2012127342A1 (en) * 2011-03-18 2012-09-27 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (en) * 2016-12-08 2018-06-14 富士電機株式会社 Semiconductor device manufacturing method
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI377451B (en) * 2008-12-08 2012-11-21 Everlight Chem Ind Corp Developer composition
CN101825848B (en) * 2010-04-19 2011-11-23 张万诚 Developing solution of thermosensitive positive-type photosensitive plate for printing and preparation method thereof
KR101993360B1 (en) 2012-08-08 2019-06-26 삼성전자주식회사 Phto lithographic rinse solution
CN102929109A (en) * 2012-11-15 2013-02-13 杭州格林达化学有限公司 Negative photoresist developing solution and application thereof
JP5728517B2 (en) * 2013-04-02 2015-06-03 富士フイルム株式会社 Method for producing organic processing liquid for patterning chemically amplified resist film, pattern forming method, and method for producing electronic device
CN105589304B (en) * 2016-03-04 2020-08-14 苏州晶瑞化学股份有限公司 Developing solution for photoresist and preparation method and application thereof
KR102152665B1 (en) * 2016-03-31 2020-09-07 후지필름 가부시키가이샤 Processing liquid for semiconductor manufacturing, and pattern formation method
CN111965958A (en) * 2020-09-07 2020-11-20 苏州理硕科技有限公司 Developing solution for dry film photoresist and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (en) * 1998-12-14 2000-06-22 Syngenta Participations Ag Pesticide formulations containing alkoxylated tristyrylphenol hemi-sulfate ester neutralized alkoxylated amine surfactants
JP2001228630A (en) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd Developing solution for developing photosensitive resin, image forming method, method for producing color filter, method for producing active matrix substrate with color filter and liquid crystal display
JP2004117981A (en) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd Developing solution for photosensitive planographic printing plate
JP2004184648A (en) * 2002-12-03 2004-07-02 Clariant (Japan) Kk Rinse liquid for lithography, and method for resist pattern formation using same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169299A (en) * 2000-09-21 2002-06-14 Tokuyama Corp Photoresist developer
TWI229245B (en) * 2002-02-27 2005-03-11 Chi Mei Corp A developer solution composition and process using the same
EP1376241A1 (en) * 2002-06-24 2004-01-02 Fuji Photo Film Co., Ltd. Method for preparing lithographic printing plate
JP4040539B2 (en) * 2003-06-13 2008-01-30 東京応化工業株式会社 Developer composition for resist and method for forming resist pattern
SG138212A1 (en) * 2005-06-13 2008-01-28
CN101253449A (en) * 2005-08-30 2008-08-27 日立化成工业株式会社 Photosensitive resin composition and photosensitive element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (en) * 1998-12-14 2000-06-22 Syngenta Participations Ag Pesticide formulations containing alkoxylated tristyrylphenol hemi-sulfate ester neutralized alkoxylated amine surfactants
JP2001228630A (en) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd Developing solution for developing photosensitive resin, image forming method, method for producing color filter, method for producing active matrix substrate with color filter and liquid crystal display
JP2004117981A (en) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd Developing solution for photosensitive planographic printing plate
JP2004184648A (en) * 2002-12-03 2004-07-02 Clariant (Japan) Kk Rinse liquid for lithography, and method for resist pattern formation using same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (en) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 Developer solution component
WO2012127342A1 (en) * 2011-03-18 2012-09-27 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
US9184057B2 (en) 2011-03-18 2015-11-10 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (en) * 2016-12-08 2018-06-14 富士電機株式会社 Semiconductor device manufacturing method
JPWO2018105299A1 (en) * 2016-12-08 2019-04-04 富士電機株式会社 Semiconductor device manufacturing method
US10629441B2 (en) 2016-12-08 2020-04-21 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR101084454B1 (en) 2011-11-21
TWI401544B (en) 2013-07-11
JP5052410B2 (en) 2012-10-17
TW200915020A (en) 2009-04-01
JP2008310315A (en) 2008-12-25
CN101657761B (en) 2012-07-04
CN101657761A (en) 2010-02-24
KR20100014740A (en) 2010-02-10

Similar Documents

Publication Publication Date Title
WO2008140083A1 (en) Photoresist developing solution
TW200713365A (en) Electrolyte solution for electrochemical device and electrochemical device using the same
TW200606222A (en) Aqueous cationic polyurethane resin dispersion, ink-jet receiving agent comprising the dispersion, and ink-jet recording medium using the same
WO2009034998A1 (en) Composition containing polymer having nitrogenous silyl group for forming resist underlayer film
TW200732838A (en) Salt suitable for an acid generator and a chemically amplified resist composition containing the same
TW200641530A (en) A salt suitable for an acid generator and a chemically amplified resist composition containing the same
TW200641539A (en) Salt suitable for an acid generator and a chemically amplified resist composition containing the same
MX2010001857A (en) Pesticide composition potentiated in efficacy and method for potentiating the efficacy of pesticidal active ingredients.
EP1980911A3 (en) Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
TW200736824A (en) Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
WO2008140099A1 (en) Tetrazoyloxime derivative and plant disease control agent
WO2009013120A3 (en) Soluble liquid formulations of quinclorac ammonium salts
TW200636390A (en) Photosensitive resin composition and color filter using the same
EP1574548A4 (en) Antistatic agents for resins, antistatic resin compositions, and moldings of antistatic resins
BRPI0601766A (en) amine-containing compositions and their use
TW200632091A (en) Liquid detergent composition
MXPA03000922A (en) Alkyl glycidyl ether-capped diamine foam controlling agents.
WO2009005135A1 (en) Curing agent for epoxy resin and curing agent composition for epoxy resin
TW200604732A (en) A chemically amplified positive resist composition
EP1718969B8 (en) An aqueous solution for use as medium for the specific binding reaction of a binding pair
BR0317022A (en) Quaternary Ammonium Composition
WO2008102666A1 (en) Hair dye and hair dye applicator with the same
MY152097A (en) Hair conditioning composition
TW200609206A (en) Agent for permanent hair processing
WO2009063782A1 (en) Composition for external application to skin

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880012372.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752654

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097020596

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08752654

Country of ref document: EP

Kind code of ref document: A1