WO2008139848A1 - フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 - Google Patents

フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 Download PDF

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Publication number
WO2008139848A1
WO2008139848A1 PCT/JP2008/057718 JP2008057718W WO2008139848A1 WO 2008139848 A1 WO2008139848 A1 WO 2008139848A1 JP 2008057718 W JP2008057718 W JP 2008057718W WO 2008139848 A1 WO2008139848 A1 WO 2008139848A1
Authority
WO
WIPO (PCT)
Prior art keywords
photomask
photomask substrate
substrate
pair
reference plane
Prior art date
Application number
PCT/JP2008/057718
Other languages
English (en)
French (fr)
Inventor
Tetsuya Abe
Yuhei Nitta
Yukiyasu Kimura
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to KR1020147007728A priority Critical patent/KR101497886B1/ko
Priority to EP08751903.9A priority patent/EP2146244B1/en
Priority to CN2008800153743A priority patent/CN101681092B/zh
Priority to JP2009514063A priority patent/JP5304644B2/ja
Publication of WO2008139848A1 publication Critical patent/WO2008139848A1/ja
Priority to US12/591,121 priority patent/US8153336B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/02—Re-forming glass sheets
    • C03B23/023—Re-forming glass sheets by bending
    • C03B23/025—Re-forming glass sheets by bending by gravity
    • C03B23/0252—Re-forming glass sheets by bending by gravity by gravity only, e.g. sagging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　厚さが実質的に均一のフォトマスク用基板であって、連続的な曲面からなる、マスクパターンを形成すべき第１面と、第２面と、を備える。第１面は、相対向する第１組の辺と相対向する第２組の辺とからなる四角形状を呈し、第１組の各辺に沿った端部に支持部を有する。フォトマスク用基板を、第１面が実質的に鉛直な状態となるように保持したときに、第１面の中心点における第１面の接平面と平行な参照平面を、フォトマスク用基板に対し第２面より第１面に近い側において定義する。このとき、第１面の中心点と参照平面との間の厚さ方向に沿った第１の距離が、第２組の各辺の中点と参照平面との間の厚さ方向に沿った第２の距離よりも短い。
PCT/JP2008/057718 2007-05-09 2008-04-22 フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法 WO2008139848A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020147007728A KR101497886B1 (ko) 2007-05-09 2008-04-22 포토마스크용 기판, 포토마스크용 기판의 성형 부재, 포토마스크용 기판의 제조 방법, 포토마스크, 및 포토마스크를 사용한 노광 방법
EP08751903.9A EP2146244B1 (en) 2007-05-09 2008-04-22 Fabricatiion method of a photomask substrate
CN2008800153743A CN101681092B (zh) 2007-05-09 2008-04-22 光罩用基板、光罩用基板的成形构件、光罩用基板的制造方法、光罩、及使用光罩的曝光方法
JP2009514063A JP5304644B2 (ja) 2007-05-09 2008-04-22 フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法
US12/591,121 US8153336B2 (en) 2007-05-09 2009-11-09 Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-124126 2007-05-09
JP2007124126 2007-05-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/591,121 Continuation US8153336B2 (en) 2007-05-09 2009-11-09 Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask

Publications (1)

Publication Number Publication Date
WO2008139848A1 true WO2008139848A1 (ja) 2008-11-20

Family

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Application Number Title Priority Date Filing Date
PCT/JP2008/057718 WO2008139848A1 (ja) 2007-05-09 2008-04-22 フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法

Country Status (7)

Country Link
US (1) US8153336B2 (ja)
EP (1) EP2146244B1 (ja)
JP (1) JP5304644B2 (ja)
KR (2) KR101497886B1 (ja)
CN (1) CN101681092B (ja)
TW (1) TWI430018B (ja)
WO (1) WO2008139848A1 (ja)

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US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US8446579B2 (en) 2008-05-28 2013-05-21 Nikon Corporation Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US8462317B2 (en) 2007-10-16 2013-06-11 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8520291B2 (en) 2007-10-16 2013-08-27 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US8675177B2 (en) 2003-04-09 2014-03-18 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
US8854601B2 (en) 2005-05-12 2014-10-07 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9097981B2 (en) 2007-10-12 2015-08-04 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9140992B2 (en) 2003-10-28 2015-09-22 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9164209B2 (en) 2003-11-20 2015-10-20 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction

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KR101260221B1 (ko) * 2011-12-01 2013-05-06 주식회사 엘지화학 마스크
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US9027365B2 (en) 2013-01-08 2015-05-12 Heraeus Quartz America Llc System and method for forming fused quartz glass
JP2014141356A (ja) * 2013-01-22 2014-08-07 Nippon Electric Glass Co Ltd 結晶化ガラス屈曲板の製造方法
JP5582232B1 (ja) * 2013-07-30 2014-09-03 日本電気硝子株式会社 曲面形状を有するガラス板の製造方法、曲面形状を有するガラス板及び曲面形状を有するガラス板の製造装置
KR101853035B1 (ko) 2013-12-23 2018-04-27 헤래우스 쿼츠 아메리카 엘엘씨 불투명한 석영 유리 부품을 형성하기 위한 방법
CN108351597B (zh) * 2015-09-01 2021-02-09 株式会社尼康 光罩保持装置、曝光装置、平板显示器的制造方法、器件制造方法、光罩的保持方法以及曝光方法
CN105511220B (zh) * 2016-02-04 2019-12-27 京东方科技集团股份有限公司 掩膜版
CN106502044B (zh) * 2017-01-10 2020-01-24 昆山国显光电有限公司 掩膜板及其制造方法
DE102020114880A1 (de) * 2020-06-04 2021-12-09 Gerresheimer Bünde Gmbh Vorrichtung zum Umformen eines Glaszeuges

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TWI430018B (zh) 2014-03-11
US8153336B2 (en) 2012-04-10
TW200903145A (en) 2009-01-16
KR101545361B1 (ko) 2015-08-19
EP2146244A1 (en) 2010-01-20
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EP2146244A4 (en) 2010-04-28
JP5304644B2 (ja) 2013-10-02
KR101497886B1 (ko) 2015-03-04
KR20100023854A (ko) 2010-03-04
US20100062350A1 (en) 2010-03-11
JPWO2008139848A1 (ja) 2010-07-29
CN101681092B (zh) 2012-07-25
CN101681092A (zh) 2010-03-24

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