WO2008133424A1 - A detector module with pixelated scintillators for radiation imaging and the manufacturing method thereof - Google Patents

A detector module with pixelated scintillators for radiation imaging and the manufacturing method thereof Download PDF

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Publication number
WO2008133424A1
WO2008133424A1 PCT/KR2008/002264 KR2008002264W WO2008133424A1 WO 2008133424 A1 WO2008133424 A1 WO 2008133424A1 KR 2008002264 W KR2008002264 W KR 2008002264W WO 2008133424 A1 WO2008133424 A1 WO 2008133424A1
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WIPO (PCT)
Prior art keywords
oxide film
receiving area
scintillators
photodiode
detector module
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Application number
PCT/KR2008/002264
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French (fr)
Inventor
Kwang Hyun Kim
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Radtek, Co., Ltd.
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Publication of WO2008133424A1 publication Critical patent/WO2008133424A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device

Definitions

  • the present invention relates to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, and more particularly, to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, in which an oxide film is formed on a top surface of a photodiode which constitutes a photo sensor unit for sensing light to output it as an electric signal in such a manner that deposition and etching processes for the oxide film are repeatedly performed to form a step so that the oxide film corresponding to a light receiving area may protrude more than the oxide film corresponding to a light non-receiving area, and scintillators are directly deposited on a top surface of the oxide film corresponding to the protruding light receiving area so that the scintillators may be integrated with the pixelated photo sensor unit, thereby being capable of implementing the higher resolution and the higher sensitivity.
  • radiation includes natural radiation such as alpha ray, beta ray, gamma ray and neutron ray which are naturally emitted from unstable radioisotopes so that the unstable radioisotopes may be stabilized, and artificial radiation such as alpha ray, beta ray, gamma ray, neutron ray and X ray which are emitted from a material artificially destabilized by applying an energy thereto from the outside so that the destabilized material may turn to be stabilized.
  • natural radiation such as alpha ray, beta ray, gamma ray and neutron ray
  • artificial radiation such as alpha ray, beta ray, gamma ray, neutron ray and X ray which are emitted from a material artificially destabilized by applying an energy thereto from the outside so that the destabilized material may turn to be stabilized.
  • Such radiation has common properties such as ionization function, picturing function and fluorescence function, and various detection devices such as ionization boxes, Geiger counters and scintillation counters may be used to detect the radiation itself or measure the intensity of the radiation, so that the radiation may have been prevalently applied to various industries such as medical fields, agricultural fields and manufacturing fields.
  • a detector module for radiation imaging capable of obtaining an image of a material through which radiation is transmitted will be described below with reference to Figs. 1 and 2 of the accompanying drawings.
  • FIG. 1 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging according to an example of a the prior art
  • Fig. 2 is a view showing the conventional detector module for radiation imaging in which the photo sensor unit shown in Fig. 1 is employed.
  • the detector module for radiation imaging includes a light emitting unit 90 having scintillators 70 for generating light when radiation is absorbed, and a photo sensor unit 10 which receives the light generated from the scintillators 70 of the light emitting unit 90 and outputs it as an electric signal.
  • the photo sensor unit 10 is a photoelectric transformation device for transforming a light energy into an electric energy and includes a plurality of unit pixels arranged in the form of a one dimensional array or a two dimensional plate-shaped matrix, each unit pixel being provided with a photodiode.
  • the photodiode used in the detector module for radiation imaging is a PN junction photodiode, a PIN junction photodiode, an Avalanche photodiode or a Geiger mode photodiode, wherein the conventional detector module with a PIN junction photodiode 12 applied to the photo sensor unit 10 will be described.
  • the photodiode 12 having the PIN junction configuration is provided with a p-type dopant layer 16 and a n-type dopant layer 14 which are formed by implanting ions corresponding to elements in Groups 3 and 5 in the periodic table into an upper and a lower portions of a silicon substrate, respectively.
  • the PIN junction photodiode 12 is configured to include guard rings 18 for preventing current generated from the photodiode 12 from leaking toward its adjacent photodiode; metal electrodes 40 and 42 which are connected to the respective dopant layers 14 and 16 of the photodiode 12 and function as paths for transferring the electric signal to the outside; an oxide film 20 formed on a top surface of the photodiode 12 through deposition and etching processes so that the light receiving area A on which light is incident may be lower than the light non-receiving area B which is adjacent to the light receiving area A; and an anti- reflective coating film 30 made of silicon nitride (Si3N4) which protects a surface of the light receiving area A and prevents the light collection efficiency from being reduced due to the reflection from another surface corresponding to the light non- receiving area B when the light generated from the scintillators 70 due to the radiation is incident on the photodiode 12.
  • guard rings 18 for preventing current generated from the photodiode 12 from leaking toward
  • the light emitting unit 90 is configured to be manufactured by first coating a transparent glass substrate 50 with a polymer based chemical material 60 such as SU- 8, forming a pixel-type pattern to the polymer coating layer through an etching process using a lattice- shaped mask, and finally depositing a material for the scintillators 70 into grooves of the pattern formed above.
  • a polymer based chemical material 60 such as SU- 8
  • the light emitting unit 90 is coupled with a top surface of the photo sensor unit 10 using an optical adhesive 80, thereby completing the detector module for radiation imaging.
  • the scintillators 70 are deposited on the polymer based chemical material 60 such as SU-8 attached onto the glass substrate 50 in the conventional detector module for radiation imaging in which the pixelated scintillators are formed into the grooves of the predetermined pattern as described above, it is troublesome that the conventional detector module should be additionally coupled with the photo sensor unit 10 using the optical adhesive 80. Further, since the optical adhesive 80 is not absolutely transparent and bubbles or physical spaces may be generated through the coupling process, there is a problem in that the light loss may be generated while the light generated from the scintillators 70 reaches the photo sensor unit 10.
  • the pixel size of the photo sensor unit 10 is small as much as some tens of micrometers, it is difficult to exactly couple the unit pixels, which constitutes the photo sensor unit 10, with the pixelated scintillators 70 in one-to-one correspondence. Accordingly, there is a problem in that a diffusion phenomenon of light is resulted and causes the resolution and sensitivity of the detector module for radiation imaging to be deteriorated.
  • an object of the present invention is to provide a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, in which in a photodiode constituting a photo sensor unit for receiving light generated from scintillators, deposition and etching processes for an oxide film are repeatedly performed to form a step so that the oxide film corresponding to a light receiving area of the photodiode may protrude more than the oxide film corresponding to a light non-receiving area adjacent to the light receiving area, and the scintillators are directly deposited and formed on a top surface of the oxide film corresponding to the light receiving area protruding due to the step and thus the pixelated scintillators and the pixelated photo sensor unit may be integrally configured, thereby implementing the capability of higher resolution and higher sensitivity.
  • a detector module with integrated pixelated scintillators for radiation imaging which comprises a plurality of pixelated photodiodes arranged in the form of a one- dimensional array or a two-dimensional plate-shaped matrix; an oxide film deposited on a top surface of the photodiodes, wherein a step is configured to be formed between a light receiving area of each photodiode and a light non-receiving area thereof so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving area; and scintillators, each of the scintillators being deposited on a top surface of the oxide film deposited on each light receiving area.
  • a method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging which comprises the steps of providing a pixel-type photo sensor unit having a plurality of pixelated photodiodes arranged in the form of a one-dimensional array or a two-dimensional plate-shaped matrix; depositing an oxide film on a top surface of the photodiodes of the photo sensor unit, wherein deposition and etching processes are repeatedly performed to form a step between a light receiving area of each photodiode and a light non-receiving area thereof, so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving areas; and directly depositing scintillators on a top surface of the oxide film deposited on the light receiving areas.
  • a step is formed so that an oxide film deposited on a light receiving area of a photodiode which constitutes a photo sensor unit may protrude more than an oxide film corresponding to a light non-receiving area, and the scintillators are directly deposited and formed on the top surface of the oxide film deposited on the light receiving area to integrate the pixelated scintillators with the photo sensor unit, so that a coupling error generated during a coupling process between a conventional photo sensor unit and a conventional light emitting unit may be reduced to prevent a diffusion phenomenon of light, and an optical adhesive resulting in light loss is not required, whereby the higher resolution and higher sensitivity can be implemented.
  • FIG. 1 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging according to an example of a prior art.
  • FIG. 2 is a view showing the conventional detector module for radiation imaging in which the photo sensor unit shown in Fig. 1 is employed.
  • Fig. 3 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging with integrated pixelated scintillators in accordance with an embodiment of the present invention.
  • Fig. 4 is a view showing the unit pixel of the detector module for radiation imaging with pixelated scintillators integrated with the photo sensor unit shown in Fig. 3.
  • FIG. 5 is a view showing a one-dimensional array type detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention.
  • FIG. 6 is a flowchart showing a method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention.
  • a photo sensor in a detector module for radiation imaging in accordance with the present invention may be configured with various photodiodes, such as PN junction photodiodes, PIN junction photodiodes, Avalanche photodiodes, Geiger mode photodiodes or the like, and hereinafter, it will be described that the PN junction photodiode is applied as one example of the photodiode of the photo sensor.
  • FIG. 3 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging with integrated pixelated scintillators in accordance with an embodiment of the present invention.
  • a unit pixel of a photo sensor 100 of the detector module for radiation imaging in accordance with the embodiment of the present invention includes a photodiode 110 that is a photoelectric transformation device, and an oxide film 130 deposited to have a protrusion structure on a top surface of the photodiode 110.
  • the photodiode 110 is provided with a p-type ion implantation layer 112, in which a p-type dopant corresponding to an element in Group 3 in the periodic table is implanted into a silicon substrate, and a n-type ion implantation layer 114, in which an n-type dopant corresponding to an element in Group 5 is implanted into the silicon substrate, wherein the p-type ion implantation layer 112 and the n-type ion im- plantation layer 114 are connected with metal electrodes 120 and 125 that function as paths for collecting electric signals, respectively.
  • a guard ring 116 which has the same polarity as the p-type ion implantation layer 112 to be capable of preventing the current from leaking, is formed around the p-type ion implantation layer 112.
  • Boron (B) may be used as the p-type dopant while phosphorus (P) or arsenic (As) may be used as the n-type dopant.
  • the guard ring 116 may also be formed by implanting the p-type dopant in order to maintain the same polarity as the p-type ion implantation layer 112.
  • the oxide film 130 is deposited on the top surface of the photodiode 110 and serves to protect the p-type ion implantation layer 112 and the guard ring 116 positioned in an upper portion of the silicon substrate against the outside. That is, the oxide film 130 provides a surface passivation effect against contamination due to foreign materials and chemical contamination and a surface dielectric effect which a dielectric material whose resistance is high has.
  • the oxide film is formed of SiO2 in the embodiment of the present invention. If the silicon oxide film 130 is used as described above, the oxide film can also function as an anti-reflective coating film made of silicon nitride in the prior art as describe above.
  • the silicon nitride is no more used in the embodiment of the present invention. Generally, this is because oxygen can not be diffused efficiently in the portion in which there exists the silicon nitride, which makes it difficult to deposit the oxide film, and therefore, the silicon nitride may not be adequate to be used to form a step in the oxide film through the repetitive deposition and etching processes of the oxide film as described in the embodiment of the present invention.
  • a central region of the photodiode 110 in which the p-type ion implantation layer 112 is formed corresponds to a light receiving area A on which light may be incident to generate an electric signal
  • a surrounding region of the light receiving area A corresponds to a light non-receiving area B from which the electric signal cannot be generated even if light is incident thereon.
  • a step is formed so that the oxide film 130 corresponding to the light receiving area A of the photodiode 110 is configured to be higher than the oxide film 130 corresponding to the light non-receiving area B adjacent to the light receiving area A.
  • Such a step may be formed by repeatedly implementing the deposition process of the oxide film 130 and the partial etching process of the deposited oxide film 130.
  • the oxide film of the light receiving area A is configured to be at least 2 ⁇ m higher than the oxide film of the light non-receiving area B.
  • Fig. 4 is a view showing the unit pixel of the detector module for radiation imaging with pixelated scintillators integrated with the photo sensor unit shown in Fig. 3.
  • a unit pixel 400 of the detector module for radiation imaging in accordance with the present invention is configured to be an integrated type unit pixel in which a scintillator 300 is directly deposited on a top surface of the light receiving area A of the unit pixel which constitutes the photo sensor unit 100 shown in Fig. 3, i.e. on the top surface of the oxide film 130 deposited to be higher than the light non- receiving area B therearound.
  • the scintillator 300 is a material, which absorbs radiation and transforms it into light, and is deposited on the photo sensor unit 100 with a structured pixel type by a predetermined thickness.
  • Various apparatuses such as a chemical vapor deposition apparatus, a thermal evaporator, or an electron-beam evaporator may be used to deposit the scintillator 300, and the type of the device to be used for depositing the scintillator is selected depending on the melting point of the scintillator 300 to be deposited. It is preferable that the thickness of the scintillator 300 to be deposited is determined as a thickness required to maximally absorb the energy of the radiation to be used to acquire a radiation transmission image, so that the dimension of the scintillator 300 may be determined depending on the energy of the radiation to be measured.
  • the chemical vapor deposition apparatus was used to deposit the scintillator 300 in this embodiment.
  • the scintillator 300 may be formed of a material such as CsI(Tl)(cesium iodine to which thallium is added) or ZnSe(Te)(zinc selenium to which tellurium is added).
  • the internal space of the chemical vapor deposition device applied in this embodiment is maintained under a vacuum state.
  • the vacuum state if scintillator powder is put on the photo sensor unit 100 on which the step is formed so that the light receiving area A is higher than the light non-receiving area B and a predetermined temperature is applied, the scintillator powder is attached and deposited on the top surface of the light receiving area A.
  • the scintillator 300 is preferentially deposited on the oxide film 130 corresponding to the light receiving area A when the scintillator powder is put in. Further, since the width of the light non-receiving area B is substantially much smaller than that of the light receiving area A, the amount of the scintillator 300 deposited on the light non- receiving area B is excessively minute compared with that of the scintillator 300 deposited on the light receiving area A.
  • the scintillator 300 begins to be deposited on the pixelated photo sensor unit 100, the scintillator 300 is much easily deposited on the region which has the same material as the scintillator 300, i.e., the region on which the scintillator 300 begins to be deposited, so that the scintillator 300 may be successively deposited on the light receiving area A, thereby increasing the height of the scintillator 300.
  • the height by which the scintillator 300 is deposited is determined depending on the conditions such as deposition time, deposition temperature, the amount of scintillator powder and therefore, the scintillator 300 may be deposited by a desired height by appropriately controlling these conditions.
  • the scintillator 300 may be directly deposited on the photo sensor unit 100 in accordance with the present invention without requiring the glass substrate 50, the polymer based chemical material 60 such as SU- 8 and the optical adhesive 80, which are provided in the aforementioned conventional detector module for radiation imaging. Accordingly, since the light generated from the scintillator 300 due to radiation is directly applied to the photo sensor unit 100, the light loss can be reduced. Further, since the pixelated scintillator 300 and the pixelated photo sensor unit 100 are integrally formed, contrary to the conventional detector module for radiation imaging, both the imbalance of the contact surfaces and the difficulty for arranging the contact surfaces can be resolved, so that the cross-talk of light can be prevented, thereby realizing the higher resolution and sensitivity.
  • FIG. 5 is a view showing a one-dimensional array type detector module for radiation imaging with integrated pixelated scintillators in accordance with the present invention.
  • the detector module with pixelated scintillators for radiation imaging in accordance with the present invention may be configured with various types depending on the way how a plurality of the unit pixels are arranged.
  • the detector module for radiation imaging in a one dimensional array form or a two dimensional plate-shaped matrix form can be configured by arranging the plurality of unit pixels, which constitute the photo sensor unit, in the form of either a one dimensional array or a two dimensional plate-shaped matrix.
  • a reflector 500 may be formed by coating an outer surface of the detector module for radiation imaging as constructed above with a material such as silver (Ag) so that the detector module can be protected from the external impact or pollution and the light generated from the scintillator can be prevented from leaking to the outside of the scintillator and being lost.
  • a material such as silver (Ag)
  • the reflector 500 causes the emitted light V to keep within the scintillators 300 without the emitted light escaping to the outside thereof.
  • the light generated from the scintillators 300 as described above is directed to and absorbed by the photo sensor unit 100 which is positioned under the scintillators 300 and integrated with the scintillators 300.
  • the photo sensor unit 100 transforms the absorbed light into an electric signal and outputs it, so that an image of a material can be obtained.
  • FIG. 6 is a flowchart showing a method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention.
  • a pixel-type photodiode assembly in which a plurality of pixelated photodiodes are arranged in the form of a one-dimensional array or a two-dimensional plate-shaped matrix is configured (step S610).
  • an oxide film is deposited on a top surface of each of the photodiodes which are arranged in a pixel type, wherein a plurality of deposition and etching processes are repeatedly performed so that a step between the oxide film of the light receiving area of each photodiode and the oxide film of the light non-receiving area adjacent to the light receiving area is formed to protrude the oxide film corresponding to the light receiving area (step S620).
  • the scintillators are directly deposited on the top surface of the oxide film corresponding to the protruding light receiving areas (step S630).
  • the height of the scintillators to be deposited may be controlled using deposition time, deposition temperature and the amount of scintillator powder.
  • an outer coating is formed on an outer surface of the detector module with integrated pixelated scintillators for radiation imaging by coating the outer surface with a material such as silver (Ag) (step S640).
  • the detector module with integrated pixelated scintillators for radiation imaging can be manufactured with the higher resolution and higher sensitivity.
  • a coupling error generated during a coupling process between a conventional photo sensor unit and a conventional light emitting unit may be reduced to prevent a diffusion phenomenon of light, and an optical adhesive resulting in light loss is not required, whereby the higher resolution and higher sensitivity can be implemented.

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Abstract

The present invention relates to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, and more particularly, to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, in which an oxide film is formed on a top surface of a photodiode which constitutes a photo sensor unit for sensing light to output it as an electric signal in such a manner that deposition and etching processes for the oxide film are repeatedly performed to form a step so that the oxide film corresponding to a light receiving area may protrude more than the oxide film corresponding to a light non-receiving area, and scintillators are directly deposited on a top surface of the oxide film corresponding to the protruding light receiving area so that the scintillators may be integrated with the pixelated photo sensor unit, thereby being capable of implementing the higher resolution and the higher sensitivity. According to the present invention, a detector module with integrated pixelated scintillators for radiation imaging comprises a plurality of pixelated photodiodes arranged in the form of a one-dimensional array or a two-dimensional plate-shaped matrix; an oxide film deposited on a top surface of the photodiodes, wherein a step is configured to be formed between a light receiving area of each photodiode and a light non-receiving area thereof so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving area; and scintillators, each of the scintillators being deposited on a top surface of the oxide film deposited on each light receiving area.

Description

Description
A DETECTOR MODULE WITH PIXELATED SCINTILLATORS FOR RADIATION IMAGING AND THE MANUFACTURING
METHOD THEREOF
Technical Field
[1] The present invention relates to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, and more particularly, to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, in which an oxide film is formed on a top surface of a photodiode which constitutes a photo sensor unit for sensing light to output it as an electric signal in such a manner that deposition and etching processes for the oxide film are repeatedly performed to form a step so that the oxide film corresponding to a light receiving area may protrude more than the oxide film corresponding to a light non-receiving area, and scintillators are directly deposited on a top surface of the oxide film corresponding to the protruding light receiving area so that the scintillators may be integrated with the pixelated photo sensor unit, thereby being capable of implementing the higher resolution and the higher sensitivity.
[2]
Background Art
[3] Generally, radiation includes natural radiation such as alpha ray, beta ray, gamma ray and neutron ray which are naturally emitted from unstable radioisotopes so that the unstable radioisotopes may be stabilized, and artificial radiation such as alpha ray, beta ray, gamma ray, neutron ray and X ray which are emitted from a material artificially destabilized by applying an energy thereto from the outside so that the destabilized material may turn to be stabilized.
[4] Such radiation has common properties such as ionization function, picturing function and fluorescence function, and various detection devices such as ionization boxes, Geiger counters and scintillation counters may be used to detect the radiation itself or measure the intensity of the radiation, so that the radiation may have been prevalently applied to various industries such as medical fields, agricultural fields and manufacturing fields.
[5] A detector module for radiation imaging, according to a prior art, capable of obtaining an image of a material through which radiation is transmitted will be described below with reference to Figs. 1 and 2 of the accompanying drawings.
[6] Fig. 1 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging according to an example of a the prior art, and Fig. 2 is a view showing the conventional detector module for radiation imaging in which the photo sensor unit shown in Fig. 1 is employed.
[7] Referring to Figs. 1 and 2, the detector module for radiation imaging according to the prior art includes a light emitting unit 90 having scintillators 70 for generating light when radiation is absorbed, and a photo sensor unit 10 which receives the light generated from the scintillators 70 of the light emitting unit 90 and outputs it as an electric signal.
[8] The photo sensor unit 10 is a photoelectric transformation device for transforming a light energy into an electric energy and includes a plurality of unit pixels arranged in the form of a one dimensional array or a two dimensional plate-shaped matrix, each unit pixel being provided with a photodiode.
[9] The photodiode used in the detector module for radiation imaging is a PN junction photodiode, a PIN junction photodiode, an Avalanche photodiode or a Geiger mode photodiode, wherein the conventional detector module with a PIN junction photodiode 12 applied to the photo sensor unit 10 will be described.
[10] The photodiode 12 having the PIN junction configuration is provided with a p-type dopant layer 16 and a n-type dopant layer 14 which are formed by implanting ions corresponding to elements in Groups 3 and 5 in the periodic table into an upper and a lower portions of a silicon substrate, respectively. Further, the PIN junction photodiode 12 is configured to include guard rings 18 for preventing current generated from the photodiode 12 from leaking toward its adjacent photodiode; metal electrodes 40 and 42 which are connected to the respective dopant layers 14 and 16 of the photodiode 12 and function as paths for transferring the electric signal to the outside; an oxide film 20 formed on a top surface of the photodiode 12 through deposition and etching processes so that the light receiving area A on which light is incident may be lower than the light non-receiving area B which is adjacent to the light receiving area A; and an anti- reflective coating film 30 made of silicon nitride (Si3N4) which protects a surface of the light receiving area A and prevents the light collection efficiency from being reduced due to the reflection from another surface corresponding to the light non- receiving area B when the light generated from the scintillators 70 due to the radiation is incident on the photodiode 12.
[11] Meanwhile, the light emitting unit 90 is configured to be manufactured by first coating a transparent glass substrate 50 with a polymer based chemical material 60 such as SU- 8, forming a pixel-type pattern to the polymer coating layer through an etching process using a lattice- shaped mask, and finally depositing a material for the scintillators 70 into grooves of the pattern formed above.
[12] Then, with the scintillators 70 facing downward, the light emitting unit 90 is coupled with a top surface of the photo sensor unit 10 using an optical adhesive 80, thereby completing the detector module for radiation imaging.
[13] However, since the scintillators 70 are deposited on the polymer based chemical material 60 such as SU-8 attached onto the glass substrate 50 in the conventional detector module for radiation imaging in which the pixelated scintillators are formed into the grooves of the predetermined pattern as described above, it is troublesome that the conventional detector module should be additionally coupled with the photo sensor unit 10 using the optical adhesive 80. Further, since the optical adhesive 80 is not absolutely transparent and bubbles or physical spaces may be generated through the coupling process, there is a problem in that the light loss may be generated while the light generated from the scintillators 70 reaches the photo sensor unit 10.
[14] Further, if the pixel size of the photo sensor unit 10 is small as much as some tens of micrometers, it is difficult to exactly couple the unit pixels, which constitutes the photo sensor unit 10, with the pixelated scintillators 70 in one-to-one correspondence. Accordingly, there is a problem in that a diffusion phenomenon of light is resulted and causes the resolution and sensitivity of the detector module for radiation imaging to be deteriorated.
[15]
Disclosure of Invention Technical Problem
[16] Accordingly, the present invention is conceived to solve the aforementioned problems in the prior art. That is, an object of the present invention is to provide a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof, in which in a photodiode constituting a photo sensor unit for receiving light generated from scintillators, deposition and etching processes for an oxide film are repeatedly performed to form a step so that the oxide film corresponding to a light receiving area of the photodiode may protrude more than the oxide film corresponding to a light non-receiving area adjacent to the light receiving area, and the scintillators are directly deposited and formed on a top surface of the oxide film corresponding to the light receiving area protruding due to the step and thus the pixelated scintillators and the pixelated photo sensor unit may be integrally configured, thereby implementing the capability of higher resolution and higher sensitivity.
[17]
Technical Solution
[18] According to the present invention for achieving the objects, there is provided a detector module with integrated pixelated scintillators for radiation imaging, which comprises a plurality of pixelated photodiodes arranged in the form of a one- dimensional array or a two-dimensional plate-shaped matrix; an oxide film deposited on a top surface of the photodiodes, wherein a step is configured to be formed between a light receiving area of each photodiode and a light non-receiving area thereof so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving area; and scintillators, each of the scintillators being deposited on a top surface of the oxide film deposited on each light receiving area.
[19] Further, according to the present invention, there is provided a method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging, which comprises the steps of providing a pixel-type photo sensor unit having a plurality of pixelated photodiodes arranged in the form of a one-dimensional array or a two-dimensional plate-shaped matrix; depositing an oxide film on a top surface of the photodiodes of the photo sensor unit, wherein deposition and etching processes are repeatedly performed to form a step between a light receiving area of each photodiode and a light non-receiving area thereof, so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving areas; and directly depositing scintillators on a top surface of the oxide film deposited on the light receiving areas.
[20]
Advantageous Effects
[21] According to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof in accordance with the present invention, a step is formed so that an oxide film deposited on a light receiving area of a photodiode which constitutes a photo sensor unit may protrude more than an oxide film corresponding to a light non-receiving area, and the scintillators are directly deposited and formed on the top surface of the oxide film deposited on the light receiving area to integrate the pixelated scintillators with the photo sensor unit, so that a coupling error generated during a coupling process between a conventional photo sensor unit and a conventional light emitting unit may be reduced to prevent a diffusion phenomenon of light, and an optical adhesive resulting in light loss is not required, whereby the higher resolution and higher sensitivity can be implemented.
[22]
Brief Description of the Drawings
[23] Fig. 1 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging according to an example of a prior art.
[24] Fig. 2 is a view showing the conventional detector module for radiation imaging in which the photo sensor unit shown in Fig. 1 is employed. [25] Fig. 3 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging with integrated pixelated scintillators in accordance with an embodiment of the present invention.
[26] Fig. 4 is a view showing the unit pixel of the detector module for radiation imaging with pixelated scintillators integrated with the photo sensor unit shown in Fig. 3.
[27] Fig. 5 is a view showing a one-dimensional array type detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention.
[28] Fig. 6 is a flowchart showing a method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention.
[29] [Explanation of Reference Numerals for Major Portions Shown in Drawings]
[30] 100: photo sensor unit 110: photodiode
[31] 130: oxide film 300: scintillator
[32] 400: unit pixel of detector module for radiation imaging
[33] 500: reflector
[34]
Best Mode for Carrying Out the Invention
[35] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[36] A photo sensor in a detector module for radiation imaging in accordance with the present invention may be configured with various photodiodes, such as PN junction photodiodes, PIN junction photodiodes, Avalanche photodiodes, Geiger mode photodiodes or the like, and hereinafter, it will be described that the PN junction photodiode is applied as one example of the photodiode of the photo sensor.
[37] Fig. 3 is a view showing a unit pixel of a photo sensor unit which constitutes a detector module for radiation imaging with integrated pixelated scintillators in accordance with an embodiment of the present invention.
[38] Referring to Fig. 3, a unit pixel of a photo sensor 100 of the detector module for radiation imaging in accordance with the embodiment of the present invention includes a photodiode 110 that is a photoelectric transformation device, and an oxide film 130 deposited to have a protrusion structure on a top surface of the photodiode 110.
[39] The photodiode 110 is provided with a p-type ion implantation layer 112, in which a p-type dopant corresponding to an element in Group 3 in the periodic table is implanted into a silicon substrate, and a n-type ion implantation layer 114, in which an n-type dopant corresponding to an element in Group 5 is implanted into the silicon substrate, wherein the p-type ion implantation layer 112 and the n-type ion im- plantation layer 114 are connected with metal electrodes 120 and 125 that function as paths for collecting electric signals, respectively. A guard ring 116, which has the same polarity as the p-type ion implantation layer 112 to be capable of preventing the current from leaking, is formed around the p-type ion implantation layer 112.
[40] Boron (B) may be used as the p-type dopant while phosphorus (P) or arsenic (As) may be used as the n-type dopant. The guard ring 116 may also be formed by implanting the p-type dopant in order to maintain the same polarity as the p-type ion implantation layer 112.
[41] The oxide film 130 is deposited on the top surface of the photodiode 110 and serves to protect the p-type ion implantation layer 112 and the guard ring 116 positioned in an upper portion of the silicon substrate against the outside. That is, the oxide film 130 provides a surface passivation effect against contamination due to foreign materials and chemical contamination and a surface dielectric effect which a dielectric material whose resistance is high has.
[42] The oxide film is formed of SiO2 in the embodiment of the present invention. If the silicon oxide film 130 is used as described above, the oxide film can also function as an anti-reflective coating film made of silicon nitride in the prior art as describe above. The silicon nitride is no more used in the embodiment of the present invention. Generally, this is because oxygen can not be diffused efficiently in the portion in which there exists the silicon nitride, which makes it difficult to deposit the oxide film, and therefore, the silicon nitride may not be adequate to be used to form a step in the oxide film through the repetitive deposition and etching processes of the oxide film as described in the embodiment of the present invention.
[43] In the top surface of the photo sensor unit 100, a central region of the photodiode 110 in which the p-type ion implantation layer 112 is formed corresponds to a light receiving area A on which light may be incident to generate an electric signal, and a surrounding region of the light receiving area A corresponds to a light non-receiving area B from which the electric signal cannot be generated even if light is incident thereon.
[44] In accordance with the present invention, a step is formed so that the oxide film 130 corresponding to the light receiving area A of the photodiode 110 is configured to be higher than the oxide film 130 corresponding to the light non-receiving area B adjacent to the light receiving area A. Such a step may be formed by repeatedly implementing the deposition process of the oxide film 130 and the partial etching process of the deposited oxide film 130. In this embodiment, the oxide film of the light receiving area A is configured to be at least 2 μm higher than the oxide film of the light non-receiving area B.
[45] Fig. 4 is a view showing the unit pixel of the detector module for radiation imaging with pixelated scintillators integrated with the photo sensor unit shown in Fig. 3.
[46] Referring to Fig. 4, a unit pixel 400 of the detector module for radiation imaging in accordance with the present invention is configured to be an integrated type unit pixel in which a scintillator 300 is directly deposited on a top surface of the light receiving area A of the unit pixel which constitutes the photo sensor unit 100 shown in Fig. 3, i.e. on the top surface of the oxide film 130 deposited to be higher than the light non- receiving area B therearound.
[47] The scintillator 300 is a material, which absorbs radiation and transforms it into light, and is deposited on the photo sensor unit 100 with a structured pixel type by a predetermined thickness.
[48] Various apparatuses such as a chemical vapor deposition apparatus, a thermal evaporator, or an electron-beam evaporator may be used to deposit the scintillator 300, and the type of the device to be used for depositing the scintillator is selected depending on the melting point of the scintillator 300 to be deposited. It is preferable that the thickness of the scintillator 300 to be deposited is determined as a thickness required to maximally absorb the energy of the radiation to be used to acquire a radiation transmission image, so that the dimension of the scintillator 300 may be determined depending on the energy of the radiation to be measured.
[49] The chemical vapor deposition apparatus was used to deposit the scintillator 300 in this embodiment. The scintillator 300 may be formed of a material such as CsI(Tl)(cesium iodine to which thallium is added) or ZnSe(Te)(zinc selenium to which tellurium is added).
[50] The internal space of the chemical vapor deposition device applied in this embodiment is maintained under a vacuum state. In the vacuum state, if scintillator powder is put on the photo sensor unit 100 on which the step is formed so that the light receiving area A is higher than the light non-receiving area B and a predetermined temperature is applied, the scintillator powder is attached and deposited on the top surface of the light receiving area A.
[51] Since the oxide film 130 corresponding to the light receiving area A of the photo sensor unit 100 is structurally positioned to be higher than the oxide film 130 corresponding to the light non-receiving area B which surrounds the light receiving area A, the scintillator 300 is preferentially deposited on the oxide film 130 corresponding to the light receiving area A when the scintillator powder is put in. Further, since the width of the light non-receiving area B is substantially much smaller than that of the light receiving area A, the amount of the scintillator 300 deposited on the light non- receiving area B is excessively minute compared with that of the scintillator 300 deposited on the light receiving area A.
[52] Once the scintillator 300 begins to be deposited on the pixelated photo sensor unit 100, the scintillator 300 is much easily deposited on the region which has the same material as the scintillator 300, i.e., the region on which the scintillator 300 begins to be deposited, so that the scintillator 300 may be successively deposited on the light receiving area A, thereby increasing the height of the scintillator 300.
[53] The height by which the scintillator 300 is deposited is determined depending on the conditions such as deposition time, deposition temperature, the amount of scintillator powder and therefore, the scintillator 300 may be deposited by a desired height by appropriately controlling these conditions.
[54] As described above, the scintillator 300 may be directly deposited on the photo sensor unit 100 in accordance with the present invention without requiring the glass substrate 50, the polymer based chemical material 60 such as SU- 8 and the optical adhesive 80, which are provided in the aforementioned conventional detector module for radiation imaging. Accordingly, since the light generated from the scintillator 300 due to radiation is directly applied to the photo sensor unit 100, the light loss can be reduced. Further, since the pixelated scintillator 300 and the pixelated photo sensor unit 100 are integrally formed, contrary to the conventional detector module for radiation imaging, both the imbalance of the contact surfaces and the difficulty for arranging the contact surfaces can be resolved, so that the cross-talk of light can be prevented, thereby realizing the higher resolution and sensitivity.
[55] Fig. 5 is a view showing a one-dimensional array type detector module for radiation imaging with integrated pixelated scintillators in accordance with the present invention.
[56] Referring to Fig. 5, it may be appreciated that the detector module with pixelated scintillators for radiation imaging in accordance with the present invention may be configured with various types depending on the way how a plurality of the unit pixels are arranged.
[57] That is, the detector module for radiation imaging in a one dimensional array form or a two dimensional plate-shaped matrix form can be configured by arranging the plurality of unit pixels, which constitute the photo sensor unit, in the form of either a one dimensional array or a two dimensional plate-shaped matrix.
[58] Meanwhile, a reflector 500 may be formed by coating an outer surface of the detector module for radiation imaging as constructed above with a material such as silver (Ag) so that the detector module can be protected from the external impact or pollution and the light generated from the scintillator can be prevented from leaking to the outside of the scintillator and being lost.
[59] If radiation R is incident on the detector module for radiation imaging having pixelated scintillators 300 in accordance with the present invention, light V such as visible light is generated from the scintillators 300 of the detector module for radiation imaging.
[60] Although the light V generated from the scintillators 300 is emitted in every direction, the reflector 500 causes the emitted light V to keep within the scintillators 300 without the emitted light escaping to the outside thereof.
[61] The light generated from the scintillators 300 as described above is directed to and absorbed by the photo sensor unit 100 which is positioned under the scintillators 300 and integrated with the scintillators 300. The photo sensor unit 100 transforms the absorbed light into an electric signal and outputs it, so that an image of a material can be obtained.
[62] Hereinafter, a method for manufacturing the detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention will be described with reference to the accompanying drawings.
[63] Fig. 6 is a flowchart showing a method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging in accordance with the present invention.
[64] First, a pixel-type photodiode assembly in which a plurality of pixelated photodiodes are arranged in the form of a one-dimensional array or a two-dimensional plate-shaped matrix is configured (step S610).
[65] Then, an oxide film is deposited on a top surface of each of the photodiodes which are arranged in a pixel type, wherein a plurality of deposition and etching processes are repeatedly performed so that a step between the oxide film of the light receiving area of each photodiode and the oxide film of the light non-receiving area adjacent to the light receiving area is formed to protrude the oxide film corresponding to the light receiving area (step S620).
[66] Then, the scintillators are directly deposited on the top surface of the oxide film corresponding to the protruding light receiving areas (step S630).
[67] At this time, the height of the scintillators to be deposited may be controlled using deposition time, deposition temperature and the amount of scintillator powder.
[68] Then, an outer coating is formed on an outer surface of the detector module with integrated pixelated scintillators for radiation imaging by coating the outer surface with a material such as silver (Ag) (step S640).
[69] Through a series of processes as described above, the detector module with integrated pixelated scintillators for radiation imaging can be manufactured with the higher resolution and higher sensitivity.
[70] The present invention described above is not defined by the aforementioned embodiments and the accompanying drawings. Further, it will be understood by those skilled in the art that various replacements, changes and modifications can be made thereto without departing from the technical spirit and scope of the present invention. [71]
Industrial Applicability
[72] According to a detector module with integrated pixelated scintillators for radiation imaging and a manufacturing method thereof in accordance with the present invention, a coupling error generated during a coupling process between a conventional photo sensor unit and a conventional light emitting unit may be reduced to prevent a diffusion phenomenon of light, and an optical adhesive resulting in light loss is not required, whereby the higher resolution and higher sensitivity can be implemented.
[73]

Claims

Claims
[1] A detector module with integrated pixelated scintillators for radiation imaging, comprising: a plurality of pixelated photodiodes arranged in the form of a one-dimensional array or a two-dimensional plate-shaped matrix; an oxide film deposited on a top surface of the photodiodes, wherein a step is configured to be formed between a light receiving area of each photodiode and a light non-receiving area thereof so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving area; and scintillators, each of the scintillators being deposited on a top surface of the oxide film deposited on each light receiving area.
[2] The detector module as claimed in claim 1, wherein the photodiode comprises one selected from the group consisting of a PN junction photodiode, a PIN junction photodiode, an Avalanche photodiode and a Geiger mode photodiode.
[3] The detector module as claimed in claim 1, wherein the oxide film is made of silicon oxide (SiO2).
[4] The detector module as claimed in claim 1, wherein the photodiode is formed of
CsI(Tl)(cesium iodine to which thallium is added) or ZnSe(Te)(zinc selenium to which tellurium is added).
[5] The detector module as claimed in claim 1, wherein a reflector is formed by coating an outer surface of the detector module.
[6] A method for manufacturing a detector module with integrated pixelated scintillators for radiation imaging, comprising the steps of: providing a pixel-type photo sensor unit having a plurality of pixelated photodiodes arranged in the form of a one-dimensional array or a two- dimensional plate-shaped matrix; depositing an oxide film on a top surface of the photodiodes of the photo sensor unit, wherein deposition and etching processes are repeatedly performed to form a step between a light receiving area of each photodiode and a light non- receiving area thereof, so that a height of the oxide film deposited on the light receiving area of the photodiode protrudes more than that of the oxide film deposited on the light non-receiving areas; and directly depositing scintillators on a top surface of the oxide film deposited on the light receiving areas.
[7] The method as claimed in claim 6, wherein the scintillator depositing step performed using any one selected from the group consisting of a chemical vapor deposition apparatus, a thermal evaporator and an electron beam evaporator. [8] The method as claimed in claim 6, after the scintillator depositing step, further comprising the step of forming a reflector by coating an outer surface of a body in which the scintillators are integrated with the photo sensor unit.
PCT/KR2008/002264 2007-04-25 2008-04-22 A detector module with pixelated scintillators for radiation imaging and the manufacturing method thereof WO2008133424A1 (en)

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