WO2008126729A1 - 半導体素子およびその製造方法、並びに該半導体素子を備える電子デバイス - Google Patents
半導体素子およびその製造方法、並びに該半導体素子を備える電子デバイス Download PDFInfo
- Publication number
- WO2008126729A1 WO2008126729A1 PCT/JP2008/056501 JP2008056501W WO2008126729A1 WO 2008126729 A1 WO2008126729 A1 WO 2008126729A1 JP 2008056501 W JP2008056501 W JP 2008056501W WO 2008126729 A1 WO2008126729 A1 WO 2008126729A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor element
- film
- laminating
- manufacturing
- electronic device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 6
- 239000010408 film Substances 0.000 abstract 5
- 239000011787 zinc oxide Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/922—Diffusion along grain boundaries
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/530,552 US8173487B2 (en) | 2007-04-06 | 2008-04-01 | Semiconductor element, method for manufacturing same, and electronic device including same |
JP2009509266A JPWO2008126729A1 (ja) | 2007-04-06 | 2008-04-01 | 半導体素子およびその製造方法、並びに該半導体素子を備える電子デバイス |
CN2008800082201A CN101632179B (zh) | 2007-04-06 | 2008-04-01 | 半导体元件及其制造方法、以及包括该半导体元件的电子器件 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-101133 | 2007-04-06 | ||
JP2007101133 | 2007-04-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008126729A1 true WO2008126729A1 (ja) | 2008-10-23 |
Family
ID=39863833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056501 WO2008126729A1 (ja) | 2007-04-06 | 2008-04-01 | 半導体素子およびその製造方法、並びに該半導体素子を備える電子デバイス |
Country Status (4)
Country | Link |
---|---|
US (1) | US8173487B2 (ja) |
JP (1) | JPWO2008126729A1 (ja) |
CN (1) | CN101632179B (ja) |
WO (1) | WO2008126729A1 (ja) |
Cited By (19)
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JP2010165922A (ja) * | 2009-01-16 | 2010-07-29 | Idemitsu Kosan Co Ltd | 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法 |
JP2010182818A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP2010267955A (ja) * | 2009-04-16 | 2010-11-25 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2011205081A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2012049516A (ja) * | 2010-07-27 | 2012-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2012216806A (ja) * | 2011-04-01 | 2012-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2014068026A (ja) * | 2008-11-07 | 2014-04-17 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2014525143A (ja) * | 2011-07-13 | 2014-09-25 | アプライド マテリアルズ インコーポレイテッド | 薄膜トランジスタデバイスの製造方法 |
JP2015111653A (ja) * | 2013-10-30 | 2015-06-18 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2015133499A (ja) * | 2009-07-17 | 2015-07-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2016186655A (ja) * | 2009-08-27 | 2016-10-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2017022315A (ja) * | 2015-07-14 | 2017-01-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2017050569A (ja) * | 2010-07-02 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017098586A (ja) * | 2009-09-04 | 2017-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018186279A (ja) * | 2010-07-02 | 2018-11-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018186308A (ja) * | 2013-10-30 | 2018-11-22 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2020077846A (ja) * | 2009-09-16 | 2020-05-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
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JPH05251357A (ja) * | 1992-01-29 | 1993-09-28 | Toshiba Corp | 成膜方法 |
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2008
- 2008-04-01 CN CN2008800082201A patent/CN101632179B/zh not_active Expired - Fee Related
- 2008-04-01 US US12/530,552 patent/US8173487B2/en not_active Expired - Fee Related
- 2008-04-01 WO PCT/JP2008/056501 patent/WO2008126729A1/ja active Application Filing
- 2008-04-01 JP JP2009509266A patent/JPWO2008126729A1/ja active Pending
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JP2003086808A (ja) * | 2001-09-10 | 2003-03-20 | Masashi Kawasaki | 薄膜トランジスタおよびマトリクス表示装置 |
JP2005093974A (ja) * | 2003-09-18 | 2005-04-07 | Ind Technol Res Inst | 薄膜トランジスタ素子活性層の半導体材料とその製造方法 |
JP2005171359A (ja) * | 2003-12-15 | 2005-06-30 | Nikko Materials Co Ltd | スパッタリングターゲット |
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Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10158005B2 (en) | 2008-11-07 | 2018-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014068026A (ja) * | 2008-11-07 | 2014-04-17 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2014078721A (ja) * | 2008-11-07 | 2014-05-01 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2010165922A (ja) * | 2009-01-16 | 2010-07-29 | Idemitsu Kosan Co Ltd | 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法 |
JP2010182818A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
US8853690B2 (en) | 2009-04-16 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor layer |
JP2010267955A (ja) * | 2009-04-16 | 2010-11-25 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US9190528B2 (en) | 2009-04-16 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2015133499A (ja) * | 2009-07-17 | 2015-07-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11532488B2 (en) | 2009-08-27 | 2022-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US11024516B2 (en) | 2009-08-27 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP2016186655A (ja) * | 2009-08-27 | 2016-10-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
US10373843B2 (en) | 2009-08-27 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US11923206B2 (en) | 2009-08-27 | 2024-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP2017098586A (ja) * | 2009-09-04 | 2017-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020077846A (ja) * | 2009-09-16 | 2020-05-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2022033795A (ja) * | 2009-10-09 | 2022-03-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP7004471B2 (ja) | 2009-12-08 | 2022-01-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2021040161A (ja) * | 2009-12-08 | 2021-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9496404B2 (en) | 2010-03-05 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2015233159A (ja) * | 2010-03-05 | 2015-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2011205081A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
US10388538B2 (en) | 2010-03-05 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20170040181A1 (en) | 2010-03-05 | 2017-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2018186279A (ja) * | 2010-07-02 | 2018-11-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017050569A (ja) * | 2010-07-02 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10522689B2 (en) | 2010-07-27 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US9666720B2 (en) | 2010-07-27 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2012049516A (ja) * | 2010-07-27 | 2012-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2016171330A (ja) * | 2011-04-01 | 2016-09-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2012216806A (ja) * | 2011-04-01 | 2012-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2014525143A (ja) * | 2011-07-13 | 2014-09-25 | アプライド マテリアルズ インコーポレイテッド | 薄膜トランジスタデバイスの製造方法 |
JP2018186308A (ja) * | 2013-10-30 | 2018-11-22 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2015111653A (ja) * | 2013-10-30 | 2015-06-18 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP2017022315A (ja) * | 2015-07-14 | 2017-01-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
Also Published As
Publication number | Publication date |
---|---|
US20100044702A1 (en) | 2010-02-25 |
CN101632179B (zh) | 2012-05-30 |
US8173487B2 (en) | 2012-05-08 |
CN101632179A (zh) | 2010-01-20 |
JPWO2008126729A1 (ja) | 2010-07-22 |
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