WO2008120743A1 - レジスト組成物、レジスト保護膜組成物およびレジストパターンの形成方法 - Google Patents

レジスト組成物、レジスト保護膜組成物およびレジストパターンの形成方法 Download PDF

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Publication number
WO2008120743A1
WO2008120743A1 PCT/JP2008/056170 JP2008056170W WO2008120743A1 WO 2008120743 A1 WO2008120743 A1 WO 2008120743A1 JP 2008056170 W JP2008056170 W JP 2008056170W WO 2008120743 A1 WO2008120743 A1 WO 2008120743A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist
composition
protective film
forming
hydrogen atom
Prior art date
Application number
PCT/JP2008/056170
Other languages
English (en)
French (fr)
Inventor
Naoko Shirota
Yoko Takebe
Koichi Murata
Osamu Yokokoji
Original Assignee
Asahi Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Company, Limited filed Critical Asahi Glass Company, Limited
Publication of WO2008120743A1 publication Critical patent/WO2008120743A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F36/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
    • C08F36/02—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
    • C08F36/20—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds unconjugated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　レジスト組成物を提供する。 　式ＣＦ２＝ＣＦＣＦ２Ｃ（ＸＡ）（Ｃ（Ｏ）ＯＺＡ）（ＣＨ２）ｎａＣＲＡ＝ＣＨＲＡで表される化合物の重合により形成された繰り返し単位（Ａ）を有する重合体（ＰＡ）を含むレジスト組成物（ただし、ＸＡは水素原子、シアノ基または式－Ｃ（Ｏ）ＯＺＡで表される基を示し、ＺＡは水素原子または炭素数１～２０の１価有機基を示し、ｎａは０、１または２を示し、ＲＡは水素原子または炭素数１～２０の１価有機基であって、２個のＲＡは同一であってもよく異なっていてもよい。）。
PCT/JP2008/056170 2007-03-30 2008-03-28 レジスト組成物、レジスト保護膜組成物およびレジストパターンの形成方法 WO2008120743A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-093222 2007-03-30
JP2007093222 2007-03-30
JP2007-261186 2007-10-04
JP2007261186A JP2010139518A (ja) 2007-03-30 2007-10-04 レジスト重合体

Publications (1)

Publication Number Publication Date
WO2008120743A1 true WO2008120743A1 (ja) 2008-10-09

Family

ID=39808323

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056170 WO2008120743A1 (ja) 2007-03-30 2008-03-28 レジスト組成物、レジスト保護膜組成物およびレジストパターンの形成方法

Country Status (3)

Country Link
JP (1) JP2010139518A (ja)
TW (1) TW200910003A (ja)
WO (1) WO2008120743A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5439154B2 (ja) * 2009-12-15 2014-03-12 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000511192A (ja) * 1996-05-28 2000-08-29 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 部分フッ素化ポリマー
JP2005060664A (ja) * 2003-07-31 2005-03-10 Asahi Glass Co Ltd 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物
JP2005298707A (ja) * 2004-04-14 2005-10-27 Asahi Glass Co Ltd 含フッ素ポリマーおよびレジスト組成物
JP2007056134A (ja) * 2005-08-24 2007-03-08 Asahi Glass Co Ltd レジスト保護膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000511192A (ja) * 1996-05-28 2000-08-29 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 部分フッ素化ポリマー
JP2005060664A (ja) * 2003-07-31 2005-03-10 Asahi Glass Co Ltd 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物
JP2005298707A (ja) * 2004-04-14 2005-10-27 Asahi Glass Co Ltd 含フッ素ポリマーおよびレジスト組成物
JP2007056134A (ja) * 2005-08-24 2007-03-08 Asahi Glass Co Ltd レジスト保護膜

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SASAKI T. ET AL.: "A new monocyclic fluoropolymer for 157-nm photoresists", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 17, no. 4, 2004, pages 639 - 644, XP008117910, DOI: doi:10.2494/photopolymer.17.639 *

Also Published As

Publication number Publication date
TW200910003A (en) 2009-03-01
JP2010139518A (ja) 2010-06-24

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