WO2008116351A1 - Procédé de synthétisation d'une lumière à température de couleur inférieure et dispositif d'éclairage - Google Patents

Procédé de synthétisation d'une lumière à température de couleur inférieure et dispositif d'éclairage Download PDF

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Publication number
WO2008116351A1
WO2008116351A1 PCT/CN2007/001524 CN2007001524W WO2008116351A1 WO 2008116351 A1 WO2008116351 A1 WO 2008116351A1 CN 2007001524 W CN2007001524 W CN 2007001524W WO 2008116351 A1 WO2008116351 A1 WO 2008116351A1
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WO
WIPO (PCT)
Prior art keywords
light
low
wavelength
peak wavelength
color
Prior art date
Application number
PCT/CN2007/001524
Other languages
English (en)
Chinese (zh)
Inventor
Ben Fan
Original Assignee
He Shan Lide Electronic Enterprise Company Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by He Shan Lide Electronic Enterprise Company Ltd. filed Critical He Shan Lide Electronic Enterprise Company Ltd.
Publication of WO2008116351A1 publication Critical patent/WO2008116351A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Definitions

  • the invention relates to a method for synthesizing LED lights, in particular to a method for synthesizing low-color warm light.
  • the invention relates to a luminaire, in particular to a low-color warm light illuminating device.
  • LED from English LIGHT EMITTING DIODE abbreviation, meaning LED.
  • the simplest structure of a light-emitting diode includes a P-type semiconductor, an N-type semiconductor, and a PN junction formed therebetween. When a current is passed through the diode, at the PN junction, charge carriers are generated, that is, electrons and Holes, electrons and holes combine to release energy in the form of photons.
  • LED lamps Compared with ordinary white tungsten lamps, fluorescent lamps and other white lamps, LED lamps have the advantages of long life, power saving, durability, reliability, fast response, low waste heat and suitable for mass production.
  • single-wavelength LED lighting can only be used for a specific decorative occasion, and it is not versatile. Therefore, it is a goal pursued by the industry peers to develop mixed-light LED lamps suitable for various occasions.
  • Mixing light uses a variety of single-wavelength light to mix together to produce the chromaticity required for different occasions.
  • Color-temperature light such as white light, white light, amber light, etc., is similar to using a variety of colors to call up a specific color on the palette. s color.
  • the current methods for manufacturing mixed LEDs in the LED market can be as follows:
  • the red, green and blue light-emitting diodes are packaged in a light bulb, and the external circuit is used to adjust the power of the three primary color light-emitting diodes, so that white light or white light can be mixed.
  • the LED light of this structure needs to be respectively three
  • the power of the LEDs is independently controlled, which makes the design of the peripheral circuits very complicated and extremely costly.
  • Confirmation 3 Use a UV-emitting diode to cover the red, green and blue phosphors on the outside of the LED.
  • the above technical solution has a common disadvantage that the color temperature of the emitted light is relatively low, and it is biased toward cold light. There is no low-color warm warm light emitted by the illuminant such as a micro tungsten lamp or a high-pressure sodium lamp. Warm and warm feeling.
  • One technical problem to be solved by the present invention is to provide a method of synthesizing low-color warm light which can provide warm light of low color temperature and can be realized by a device which is low in cost, energy-saving and long in life.
  • Another technical problem to be solved by the present invention is to provide a low-color warm light-emitting device using the above method.
  • the technical problem is solved by the following technical solution: First, the first wavelength light is emitted by the LED element, and the peak wavelength thereof is 460 ⁇ 500 ⁇ ; Absorbing a portion of the first wavelength light and exciting a second wavelength light having a peak wavelength of 580-630 nm ; the unabsorbed portion of the first wavelength light is mixed with the second wavelength light to form a low-color warm light.
  • a low-color warm light emitting device wherein the outer casing is a package colloid, an electrode holder is disposed in the encapsulant, an LED component is mounted on the electrode holder, and the LED component is covered with a phosphor that can be excited by the light emitted by the 'LED component.
  • the LED element has an emission peak wavelength of 460 to 500 nm ; and the phosphor has an excitation light peak wavelength of 580 to 630 nm.
  • the light mixing and color temperature of the mixed light of the present invention are very similar to those of the miniature tungsten filament lamp, but the light effect is nearly 10 times that of the miniature tungsten filament lamp, which greatly achieves energy saving. Effect.
  • the present invention uses only one LED component, which saves cost compared with the LED lamp using three wafers, and simplifies the control circuit; the LED component has an emission peak wavelength of 460 to 500 nm ; the release energy is low, and the phosphor is not easily aged. , will not produce harmful substances to the human body, health and environmental protection.
  • the beneficial effects of the present invention are: low color temperature, low cost, energy saving, environmental protection and long life.
  • the present invention can be further improved by the following technical solutions: the LED element has an emission peak wavelength of 470 to 480 nm, and the excited peak wavelength of the phosphor is 600 ⁇ 3 nm, and the test indicates that the LED element of the parameter is selected.
  • the color temperature of the low-color warm light synthesized by the combination of the phosphor and the phosphor is 1900K ⁇ 2100K, and the position on the CIE map is mainly concentrated in the following coordinate range: (0. 8, 0. 39), (0. 8, 0. 43), (0. 53, 0. 44), (0. 53, 0. 41).
  • the LED has an emission peak wavelength of 480 to 490 nm, and the excited peak wavelength of the phosphor is 610 ⁇ 3 nm.
  • the test shows that the LED element and the phosphor of the parameter are combined to form a color temperature of low-color warm light.
  • the positions on the CIE map are mainly concentrated in the following coordinate ranges: (0. 48, 0. 39), (0. 48, 0. 43), (0. 53, 0. 44), ( 0. 53, 0. 41).
  • the LED element has an emission peak wavelength of 470 to 480 ran, and the phosphor has a peak wavelength of 590 ⁇ 3 nm.
  • the test indicates that the LED element and the phosphor of the parameter are combined to form a low-color warm light.
  • the color temperature is 2100 ⁇ 2300 ⁇ , and the position on the 3 ⁇ 4 CIE diagram is mainly concentrated in the following coordinate range ⁇ ' (0. 48, 0. 39) , (0. 48, 0. 43) , (0. 53, 0: 44) , ( 0. 53, 0. 41).
  • the LED element has an emission peak wavelength of 480 to 495 nm, and the phosphor has an excitation peak wavelength of 600.
  • the test shows that the color temperature of the low-color warm light synthesized by the combination of the LED element and the phosphor of this parameter is 2100 ⁇ 2300 ⁇ , and the position on the CIE diagram is mainly concentrated in the following coordinate range: (0. 48, 0. 39), (0. 48, 0. 43), (0. 53, 0. 44), (0. 53, 0. 41).
  • the LED element has an emission peak wavelength of 460 to 470 nm, and the phosphor has an excitation peak wavelength of 590 ⁇ 3 nm.
  • the test shows that the color temperature of the low-color warm light synthesized by the combination of the LED element and the phosphor of this parameter is about 2100K, and the coordinate range on the CIE diagram is mainly: (0. 43, 0. 36), (0 . 43, 0. 34), (0. 51, 0. 40), (0. 51, 0. 34)
  • the cup body is disposed in the encapsulant, and the LED component is disposed in the cup body, so that the wafer can be conveniently fixed before packaging, facilitating the subsequent packaging process, and improving the mass production capability.
  • the inner wall of the cup constitutes a collecting cup, which allows the light energy to be concentrated in one direction.
  • the phosphor concentrates in the cup to cover the LED element, which saves the use of phosphor.
  • Figure 1 is a schematic view of the structure of the present invention
  • Figure 2 is a second schematic view of the structure of the present invention
  • Figure 3 is a third schematic view of the structure of the present invention.
  • Figure 4 is a fourth schematic view of the structure of the present invention.
  • Figure 5 is the position of the warm white light emitted by the present invention on the CIE diagram
  • Figure 6 is a schematic illustration of the light mixing process of the present invention.
  • a low-color warm light emitting device the outer casing of which is an epoxy or other plastic encapsulant 1 having an LED element 4 in the encapsulant 1 supported by an electrode holder 2 and connected to an external power source for peaking
  • the wavelength range is: the first wavelength light B of 460 ⁇ 500 nm; the LED element is covered with the phosphor 5, and the chemical composition of the main component is A 2 Si0 4: Eu 2+ , D, wherein A is: Sr, Ca One of Mg, Zn, Cd, I elements, D is one of F, CI, Br, I, P, S, N elements, which absorbs the first wavelength light B emitted by the LED element 4, and excites
  • the second wavelength light R having a peak wavelength in the range of 590 to 630 nm.
  • the current passes through the LED element 4 to emit the first wavelength light B, part of the first wavelength light B passes through the phosphor 5, and part of the first wavelength light B is absorbed by the phosphor 5 to excite the second wavelength light R.
  • the second wavelength light R is mixed with the first wavelength light B passing through the phosphor 5 to form a low-color warm light W.
  • the principle of the light mixing is as shown in FIG. 6.
  • the range of low-color warm light emitted by LED lamps using the above technical schemes on the CIE map is mainly: (0.43, 0.33), (0.43, 0. 38), (0. 54, 0. 33 ), (0. 54, 0. 44) is the range shown in the area a in Fig. 5, and the color temperature is between 1600 ⁇ 2500 ⁇ .
  • This range of mixed light is a slightly orange-colored low-color warm light, giving a warm feeling, especially suitable for homes or street lamps and other occasions that need to express this warm color.
  • the LED element 4 and the phosphor 5 in the above wavelength range are selected as a combination of low-color warm light which can produce different color hues and color temperatures.
  • the color temperature range of the low-color warm light of the two kinds of light is about 1900 ⁇ 2100 ⁇
  • the positions on the CIE map are mainly concentrated in the following coordinate ranges: (0.48, 0. 39), (0. 48, 0.43), (0. 53, 0. 4), (0. 53, 0.41), that is, the map In area c of 5, the light color of this area is beige, which is especially suitable for transportation. It is used to replace the existing rice bubble color miniature tungsten filament lamp in the production of the beautiful lamp.
  • the color temperature range of the low-color warm light of the two kinds of light is approximately: 1900 ⁇ 2100 ⁇ , at CIE
  • the positions on the graph are mainly concentrated in the following coordinate ranges: (0. 8, 0. 39), (0. 48, 0. 43), (0. 53, 0. 44), (0. 53, 0. 41 ), that is, the area c in Figure 5, the light color of the area is beige, which is especially suitable for the use of the existing rice bubble color miniature tungsten lamp in the production of the beautiful lamp.
  • the color temperature range of the low-color warm light of the two kinds of light is about 2100 ⁇ 2300 ⁇
  • the positions on the CIE diagram are mainly concentrated in the following coordinate ranges: (0. 8, 0. 39), (0. 48, 0. 43), (0. 53, 0. 44), (0. 53, 0 41), which is the area c in Figure 5, the color of the area is champagne, which is especially suitable for the replacement of the existing champagne-colored miniature tungsten lamp in the production of the lamp.
  • the temperature range of the low color warm light of the two kinds of light is about 2100 ⁇ 2300 ⁇
  • the positions on the CIE diagram are mainly concentrated in the following coordinate ranges: (0, 48, 0. 39), (0. 48, 0. 43), (0. 53, 0.44), (0. 53, 0. 41 ), that is, area c in Figure 5, 'the color of the area is champagne, which is especially suitable for the replacement of the existing champagne-colored miniature tungsten lamp in the production of the beautiful lamp.
  • the low-color warm light of the two kinds of light is mainly concentrated on the following coordinates on the CIE diagram.
  • the color temperature range is: 2100K or so, ie In the area b of Figure 5, the color of the area is similar to the color temperature of the high-pressure sodium lamp (about 2000), so this technical solution is particularly suitable for use in the manufacture of street lamps, replacing the existing high-pressure sodium lamp bulbs.
  • the position range of the above light on the CIE diagram in the present invention is a target map measured by testing a plurality of samples and then using a fast spectrum analyzer, taking into account the discreteness of the values and other factors in the production process.
  • the range is not strictly absolute, but is determined by the concentration of test results and representative values, so the color of the finished product measured by the above technical solution is not excluded. As a result, a small amount is dispersed outside the position on the CIE map.
  • the LED element 4 may be directly encapsulated with the electrode holder 2 and then encapsulated with a colloid such as epoxy; or a cup 21 may be soldered or directly punched at the top end of the electrode holder 2, and the LED element 4 is placed in the Cup body 21 Then, the gold wire is electrically connected to the electrode holder 2, which can enhance the integration of the electrode holder 2 and the LED element, and effectively protect the LED element 4.
  • a colloid such as epoxy
  • the cup body 21 can be designed in a trumpet shape, and then a reflective material is disposed on the inner wall of the cup body 21, or the inner wall of the cup body 21 is directly smoothed to have a reflective function, so that the inner wall of the cup body 21 constitutes a collecting cup, so that Allows light to be concentrated in one direction.
  • the phosphor can be injected into the cup body 21 to cover the LED element 4, and then packaged.
  • the phosphor 5 may be pre-mixed into the encapsulant.
  • the phosphor 5 is dispersed in the encapsulant 1 and encapsulates the LED together with the encapsulant 1 .
  • changing the structure of the top end 11 of the encapsulant 1 can also cause the light emitted by the present invention to have different directions.
  • FIG. 1 when the top end 11 of the encapsulant 1 is designed in a circular arc shape, the light emitted by the point source in the encapsulant 1 is refracted by the arc-shaped top end 11 to obtain f-guided parallel light; As shown in FIG. 1 , when the top end 11 of the encapsulant 1 is designed in a circular arc shape, the light emitted by the point source in the encapsulant 1 is refracted by the arc-shaped top end 11 to obtain f-guided parallel light; As shown in FIG.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé permettant de synthétiser une lumière chaude avec une température de couleur inférieure et un dispositif d'éclairage l'utilisant qui comprend un élément DEL (4), une poudre de phosphore (5) pouvant être excitée par ledit élément DEL (4), et un colloïde d'étanchéité (1) destiné à étanchéifier l'élément DEL (4) et la poudre de phosphore (5). Un support d'électrode (2) est sorti du colloïde d'étanchéité (1) pour connecter l'élément DEL (4) à une alimentation en poudre externe. La longueur d'onde de crête d'éclairage de l'élément DEL (4) est de 460-500nm, et la longueur d'onde de crête d'éclairage excitée de la poudre de phosphore (5) est de 580-630nm.
PCT/CN2007/001524 2007-03-26 2007-05-10 Procédé de synthétisation d'une lumière à température de couleur inférieure et dispositif d'éclairage WO2008116351A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN200710027321 2007-03-26
CN200710027321.0 2007-03-26
CN200710027316.X 2007-03-26
CN200710027316 2007-03-26

Publications (1)

Publication Number Publication Date
WO2008116351A1 true WO2008116351A1 (fr) 2008-10-02

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PCT/CN2007/001524 WO2008116351A1 (fr) 2007-03-26 2007-05-10 Procédé de synthétisation d'une lumière à température de couleur inférieure et dispositif d'éclairage

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WO (1) WO2008116351A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509651B1 (en) * 1998-07-28 2003-01-21 Sumitomo Electric Industries, Ltd. Substrate-fluorescent LED
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
CN1633718A (zh) * 2001-09-03 2005-06-29 松下电器产业株式会社 半导体发光元件、发光装置及半导体发光元件的制造方法
US20050194604A1 (en) * 2004-03-02 2005-09-08 Fujikura Ltd., National Institute For Material Science Light emitting device and a lighting apparatus
CN1906269A (zh) * 2004-07-13 2007-01-31 株式会社藤仓 荧光体及使用该荧光体的发出电灯色光的电灯色光发光二极管灯
CN1927996A (zh) * 2006-09-08 2007-03-14 北京宇极科技发展有限公司 一种荧光粉材料及其制备方法和白光led电光源
CN101047219A (zh) * 2007-04-04 2007-10-03 鹤山丽得电子实业有限公司 一种发粉红色光的发光二极管
CN101050850A (zh) * 2007-03-26 2007-10-10 鹤山丽得电子实业有限公司 一种合成低色温暖光的方法和采用该方法的发光装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509651B1 (en) * 1998-07-28 2003-01-21 Sumitomo Electric Industries, Ltd. Substrate-fluorescent LED
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
CN1633718A (zh) * 2001-09-03 2005-06-29 松下电器产业株式会社 半导体发光元件、发光装置及半导体发光元件的制造方法
US20050194604A1 (en) * 2004-03-02 2005-09-08 Fujikura Ltd., National Institute For Material Science Light emitting device and a lighting apparatus
CN1906269A (zh) * 2004-07-13 2007-01-31 株式会社藤仓 荧光体及使用该荧光体的发出电灯色光的电灯色光发光二极管灯
CN1927996A (zh) * 2006-09-08 2007-03-14 北京宇极科技发展有限公司 一种荧光粉材料及其制备方法和白光led电光源
CN101050850A (zh) * 2007-03-26 2007-10-10 鹤山丽得电子实业有限公司 一种合成低色温暖光的方法和采用该方法的发光装置
CN101047219A (zh) * 2007-04-04 2007-10-03 鹤山丽得电子实业有限公司 一种发粉红色光的发光二极管

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