WO2008111220A1 - 熱電変換装置の製造方法 - Google Patents

熱電変換装置の製造方法 Download PDF

Info

Publication number
WO2008111220A1
WO2008111220A1 PCT/JP2007/055260 JP2007055260W WO2008111220A1 WO 2008111220 A1 WO2008111220 A1 WO 2008111220A1 JP 2007055260 W JP2007055260 W JP 2007055260W WO 2008111220 A1 WO2008111220 A1 WO 2008111220A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
honeycomb
holes
raw material
thermoelectric converter
Prior art date
Application number
PCT/JP2007/055260
Other languages
English (en)
French (fr)
Inventor
Kazushige Ohno
Original Assignee
Ibiden Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Priority to PCT/JP2007/055260 priority Critical patent/WO2008111220A1/ja
Priority to EP07021184A priority patent/EP1970972B1/en
Priority to AT07021184T priority patent/ATE523901T1/de
Priority to US11/943,035 priority patent/US20080223504A1/en
Publication of WO2008111220A1 publication Critical patent/WO2008111220A1/ja

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Ceramic Products (AREA)

Abstract

 非金属無機材料からなるからなるハニカムのそれぞれの貫通孔に、p型半導体原料及びn型半導体原料を交互に充填する原料充填工程と、前記ハニカムに充填されたp型半導体原料及びn型半導体原料を焼結して、ハニカムのそれぞれの貫通孔にp型半導体とn型半導体とを形成する半導体形成工程と、前記ハニカムの貫通孔に形成されたp型半導体とn型半導体とを電極により接合する電極接合工程とを有する熱電変換素子の製造方法である。
PCT/JP2007/055260 2007-03-15 2007-03-15 熱電変換装置の製造方法 WO2008111220A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2007/055260 WO2008111220A1 (ja) 2007-03-15 2007-03-15 熱電変換装置の製造方法
EP07021184A EP1970972B1 (en) 2007-03-15 2007-10-30 Manufacturing method of thermoelectric converter
AT07021184T ATE523901T1 (de) 2007-03-15 2007-10-30 Herstellungsverfahren für einen thermoelektrischen wandler
US11/943,035 US20080223504A1 (en) 2007-03-15 2007-11-20 Method of manufacturing thermoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055260 WO2008111220A1 (ja) 2007-03-15 2007-03-15 熱電変換装置の製造方法

Publications (1)

Publication Number Publication Date
WO2008111220A1 true WO2008111220A1 (ja) 2008-09-18

Family

ID=38962084

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055260 WO2008111220A1 (ja) 2007-03-15 2007-03-15 熱電変換装置の製造方法

Country Status (4)

Country Link
US (1) US20080223504A1 (ja)
EP (1) EP1970972B1 (ja)
AT (1) ATE523901T1 (ja)
WO (1) WO2008111220A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008111219A1 (ja) * 2007-03-15 2008-09-18 Ibiden Co., Ltd. 熱電変換装置
WO2008111218A1 (ja) * 2007-03-15 2008-09-18 Ibiden Co., Ltd. 熱電変換装置
KR101498047B1 (ko) * 2013-04-19 2015-03-11 주식회사 리빙케어 순간 냉수용 냉각장치
CN105702848A (zh) * 2014-11-27 2016-06-22 中国电子科技集团公司第十八研究所 一种p-n型温差电元件性能匹配方法
WO2017139751A1 (en) * 2016-02-12 2017-08-17 Rhode Island Board Of Education Temperature and thermal gradient sensor for ceramic matrix composites and methods of preparation thereof
WO2018006075A1 (en) * 2016-07-01 2018-01-04 Rhode Island Council On Postsecondary Education High resolution strain gages for ceramic matrix composites and methods of manufacture thereof
US10428713B2 (en) 2017-09-07 2019-10-01 Denso International America, Inc. Systems and methods for exhaust heat recovery and heat storage
US10782190B1 (en) 2017-12-14 2020-09-22 University Of Rhode Island Board Of Trustees Resistance temperature detector (RTD) for ceramic matrix composites
JP2019207979A (ja) * 2018-05-30 2019-12-05 イビデン株式会社 プリント配線板
US11703471B1 (en) 2018-12-20 2023-07-18 University Of Rhode Island Board Of Trustees Trace detection of chemical compounds via catalytic decomposition and redox reactions
JP7518623B2 (ja) * 2020-01-27 2024-07-18 株式会社日立製作所 熱電変換モジュール
CN115188877A (zh) * 2022-07-27 2022-10-14 武汉理工大学 一种制备强织构和高热电性能柔性热电薄膜的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098364A (ja) * 1995-06-26 1997-01-10 Saamobonitsuku:Kk 熱電変換素子の製造方法
JPH11243169A (ja) * 1998-02-24 1999-09-07 Nissan Motor Co Ltd 電子冷却モジュールおよびその製造方法
JP2002158379A (ja) * 2000-11-21 2002-05-31 National Institute Of Advanced Industrial & Technology 熱電変換素子集合体、熱電モジュール及び熱電変換素子集合体の製造方法
JP2003332644A (ja) * 2002-05-16 2003-11-21 Komatsu Ltd 熱電モジュール製造方法および熱電モジュール製造用治具
JP2004228288A (ja) * 2003-01-22 2004-08-12 Toyota Motor Corp 熱電材料とその製造方法
JP3879769B1 (ja) * 2006-02-22 2007-02-14 株式会社村田製作所 熱電変換モジュールおよびその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853622A (en) * 1990-02-09 1998-12-29 Ormet Corporation Transient liquid phase sintering conductive adhesives
JPH09139526A (ja) * 1995-11-13 1997-05-27 Ngk Insulators Ltd 熱電気変換モジュールおよびその製造方法
JPH09199765A (ja) * 1995-11-13 1997-07-31 Ngk Insulators Ltd 熱電気変換モジュールおよびその製造方法
EP0874406A3 (en) * 1997-04-23 2000-12-13 Matsushita Electric Industrial Co., Ltd. A co-sb based thermoelectric material and a method of producing the same
JPH10321921A (ja) * 1997-05-22 1998-12-04 Ngk Insulators Ltd 熱電気変換モジュールおよびその製造方法
US6127619A (en) * 1998-06-08 2000-10-03 Ormet Corporation Process for producing high performance thermoelectric modules
JP2000236117A (ja) * 1999-02-16 2000-08-29 Ngk Insulators Ltd 電気素子
US6297441B1 (en) * 2000-03-24 2001-10-02 Chris Macris Thermoelectric device and method of manufacture
JP2001320097A (ja) * 2000-05-09 2001-11-16 Komatsu Ltd 熱電素子とその製造方法及びこれを用いた熱電モジュール
JP2002076541A (ja) * 2000-08-25 2002-03-15 Sony Corp Bga実装プリント配線板
JP4103812B2 (ja) * 2003-03-05 2008-06-18 株式会社Ihi 鋳型の製造方法
WO2005015649A1 (ja) * 2003-08-08 2005-02-17 Nagamine Manufacturing Co.,Ltd. 熱電変換素子およびその製造方法
CN1820380B (zh) * 2004-01-19 2010-05-05 松下电器产业株式会社 热电转换元件及其制造方法和使用该元件的热电转换装置
US7254033B2 (en) * 2004-08-19 2007-08-07 Behdad Jafari Method and apparatus for heat dissipation
JP4584035B2 (ja) * 2005-05-31 2010-11-17 トヨタ自動車株式会社 熱電モジュール
WO2008111218A1 (ja) * 2007-03-15 2008-09-18 Ibiden Co., Ltd. 熱電変換装置
WO2008111219A1 (ja) * 2007-03-15 2008-09-18 Ibiden Co., Ltd. 熱電変換装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098364A (ja) * 1995-06-26 1997-01-10 Saamobonitsuku:Kk 熱電変換素子の製造方法
JPH11243169A (ja) * 1998-02-24 1999-09-07 Nissan Motor Co Ltd 電子冷却モジュールおよびその製造方法
JP2002158379A (ja) * 2000-11-21 2002-05-31 National Institute Of Advanced Industrial & Technology 熱電変換素子集合体、熱電モジュール及び熱電変換素子集合体の製造方法
JP2003332644A (ja) * 2002-05-16 2003-11-21 Komatsu Ltd 熱電モジュール製造方法および熱電モジュール製造用治具
JP2004228288A (ja) * 2003-01-22 2004-08-12 Toyota Motor Corp 熱電材料とその製造方法
JP3879769B1 (ja) * 2006-02-22 2007-02-14 株式会社村田製作所 熱電変換モジュールおよびその製造方法

Also Published As

Publication number Publication date
EP1970972B1 (en) 2011-09-07
EP1970972A1 (en) 2008-09-17
ATE523901T1 (de) 2011-09-15
US20080223504A1 (en) 2008-09-18

Similar Documents

Publication Publication Date Title
WO2008111220A1 (ja) 熱電変換装置の製造方法
WO2008111218A1 (ja) 熱電変換装置
WO2008111219A1 (ja) 熱電変換装置
WO2011060149A3 (en) Uniwafer thermoelectric modules
FR2904146B1 (fr) Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique
JP2011014894A5 (ja)
WO2014088667A3 (en) Light emitting device including tandem structure
WO2008018936A3 (en) High fidelity nano-structures and arrays for photovoltaics and methods of making the same
WO2012054504A3 (en) Thermoelectric apparatus and applications thereof
WO2009014985A3 (en) Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires
WO2010120082A3 (ko) 고분자 전해질층을 이용한 적층형 유기태양전지 및 그 제조방법
ATE520131T1 (de) Aluminiumpasten und ihre verwendung bei der herstellung von silicium-solarzellen
JP2011066400A5 (ja)
WO2008091396A3 (en) Thermoelectric nanowire composites
WO2008114653A1 (ja) 熱電変換モジュールの製造方法及び熱電変換モジュール
WO2011066570A3 (en) Semiconductor wire array structures, and solar cells and photodetectors based on such structures
EP1973168A3 (en) Method for manufacturing solar cell by fracturing along a dividing groove and the corresponding solar cell
WO2012045542A3 (de) Thermoelektrischer wandler und wärmetauscherrohr
WO2008139608A1 (ja) ハニカム構造体及び該ハニカム構造体の製造方法
WO2010007110A3 (de) Thermoelektrisches bauelement und verfahren zu seiner herstellung
WO2012026678A3 (en) Thermoelectric module comprising thermoelectric element doped with nanoparticles and manufacturing method of the same
WO2012040097A3 (en) A bag and a method of manufacturing a bag
EP1684362A3 (en) Process for the production of thin layers, preferably for a photovoltaic cell
WO2012105800A3 (ko) 나노전력발전소자 및 이의 제조방법
WO2012031980A3 (de) Verfahren zur herstellung eines thermoelektrischen moduls

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07738710

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07738710

Country of ref document: EP

Kind code of ref document: A1