WO2008105315A1 - 磁気メモリチップ装置の製造方法 - Google Patents
磁気メモリチップ装置の製造方法 Download PDFInfo
- Publication number
- WO2008105315A1 WO2008105315A1 PCT/JP2008/052976 JP2008052976W WO2008105315A1 WO 2008105315 A1 WO2008105315 A1 WO 2008105315A1 JP 2008052976 W JP2008052976 W JP 2008052976W WO 2008105315 A1 WO2008105315 A1 WO 2008105315A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnetic memory
- memory chip
- chip device
- manufacturing magnetic
- silicon wafer
- Prior art date
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009501206A JP5062248B2 (ja) | 2007-02-27 | 2008-02-21 | 磁気メモリチップ装置の製造方法 |
US12/525,999 US8124425B2 (en) | 2007-02-27 | 2008-02-21 | Method for manufacturing magnetic memory chip device |
US13/353,004 US8524510B2 (en) | 2007-02-27 | 2012-01-18 | Method for manufacturing magnetic memory chip device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-047822 | 2007-02-27 | ||
JP2007047822 | 2007-02-27 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/525,999 A-371-Of-International US8124425B2 (en) | 2007-02-27 | 2008-02-21 | Method for manufacturing magnetic memory chip device |
US13/353,004 Division US8524510B2 (en) | 2007-02-27 | 2012-01-18 | Method for manufacturing magnetic memory chip device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008105315A1 true WO2008105315A1 (ja) | 2008-09-04 |
Family
ID=39721150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/052976 WO2008105315A1 (ja) | 2007-02-27 | 2008-02-21 | 磁気メモリチップ装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8124425B2 (ja) |
JP (2) | JP5062248B2 (ja) |
TW (1) | TWI509602B (ja) |
WO (1) | WO2008105315A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123666A (ja) * | 2008-11-18 | 2010-06-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2010153760A (ja) * | 2008-12-26 | 2010-07-08 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2010245106A (ja) * | 2009-04-01 | 2010-10-28 | Renesas Electronics Corp | 磁気記憶装置 |
JP2011216622A (ja) * | 2010-03-31 | 2011-10-27 | Renesas Electronics Corp | 半導体装置および半導体装置アセンブリ |
JP2012124465A (ja) * | 2010-11-18 | 2012-06-28 | Nitto Denko Corp | フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、フリップチップ型半導体裏面用フィルムの製造方法、及び、半導体装置 |
JP2013118407A (ja) * | 2013-03-06 | 2013-06-13 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2014112691A (ja) * | 2013-12-26 | 2014-06-19 | Renesas Electronics Corp | 半導体装置の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013069807A (ja) * | 2011-09-21 | 2013-04-18 | Shinko Electric Ind Co Ltd | 半導体パッケージ及びその製造方法 |
US9385305B2 (en) | 2013-02-19 | 2016-07-05 | Qualcomm Incorporated | STT-MRAM design enhanced by switching current induced magnetic field |
US9269673B1 (en) * | 2014-10-22 | 2016-02-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages |
JP6280610B1 (ja) * | 2016-10-03 | 2018-02-14 | Tdk株式会社 | 磁気抵抗効果素子及びその製造方法、並びに位置検出装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004200185A (ja) * | 2002-12-16 | 2004-07-15 | Sony Corp | 磁気メモリ装置 |
JP2004207322A (ja) * | 2002-12-24 | 2004-07-22 | Sony Corp | 磁気メモリ装置 |
JP2005158985A (ja) * | 2003-11-26 | 2005-06-16 | Sony Corp | 磁気メモリ装置の実装構造及び実装基板 |
JP2005327859A (ja) * | 2004-05-13 | 2005-11-24 | Asahi Kasei Corp | 磁気抵抗素子及び回転検出器 |
JP2005340237A (ja) * | 2004-05-24 | 2005-12-08 | Renesas Technology Corp | 磁気記憶装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS645083A (en) * | 1987-06-29 | 1989-01-10 | Matsushita Electronics Corp | Manufacture of magnetic sensor |
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Also Published As
Publication number | Publication date |
---|---|
US20120122246A1 (en) | 2012-05-17 |
US8524510B2 (en) | 2013-09-03 |
TW200849243A (en) | 2008-12-16 |
JP5062248B2 (ja) | 2012-10-31 |
US8124425B2 (en) | 2012-02-28 |
TWI509602B (zh) | 2015-11-21 |
JP5626286B2 (ja) | 2014-11-19 |
JP2012256906A (ja) | 2012-12-27 |
US20100120176A1 (en) | 2010-05-13 |
JPWO2008105315A1 (ja) | 2010-06-03 |
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