WO2008093676A1 - 電子銃蒸着装置及び電子銃蒸着装置を用いた成膜方法 - Google Patents

電子銃蒸着装置及び電子銃蒸着装置を用いた成膜方法 Download PDF

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Publication number
WO2008093676A1
WO2008093676A1 PCT/JP2008/051311 JP2008051311W WO2008093676A1 WO 2008093676 A1 WO2008093676 A1 WO 2008093676A1 JP 2008051311 W JP2008051311 W JP 2008051311W WO 2008093676 A1 WO2008093676 A1 WO 2008093676A1
Authority
WO
WIPO (PCT)
Prior art keywords
deposition device
gun deposition
electron beam
film formation
formation method
Prior art date
Application number
PCT/JP2008/051311
Other languages
English (en)
French (fr)
Inventor
Masato Nakayama
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to US12/438,452 priority Critical patent/US8133528B2/en
Priority to JP2008556109A priority patent/JP4796154B2/ja
Publication of WO2008093676A1 publication Critical patent/WO2008093676A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　蒸発源を効率よく使用できることが可能な電子銃蒸着装置は、電子ビームの照射位置と、電子ビームの照射位置における膜厚成長速度とに関する情報に基づき、坩堝中の蒸発源に照射される電子ビームの照射位置が電子ビームのそれぞれの走査方向に関して膜厚成長速度の分布が略一定となる範囲を照射可能範囲として決定する電子ビーム位置制御部を備える。
PCT/JP2008/051311 2007-01-30 2008-01-29 電子銃蒸着装置及び電子銃蒸着装置を用いた成膜方法 WO2008093676A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/438,452 US8133528B2 (en) 2007-01-30 2008-01-29 Electron gun evaporation apparatus and film formation method using the electron gun evaporation apparatus
JP2008556109A JP4796154B2 (ja) 2007-01-30 2008-01-29 電子銃蒸着装置及び電子銃蒸着装置を用いた成膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-018694 2007-01-30
JP2007018694 2007-01-30

Publications (1)

Publication Number Publication Date
WO2008093676A1 true WO2008093676A1 (ja) 2008-08-07

Family

ID=39673986

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051311 WO2008093676A1 (ja) 2007-01-30 2008-01-29 電子銃蒸着装置及び電子銃蒸着装置を用いた成膜方法

Country Status (3)

Country Link
US (1) US8133528B2 (ja)
JP (1) JP4796154B2 (ja)
WO (1) WO2008093676A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101959975B1 (ko) * 2012-07-10 2019-07-16 삼성디스플레이 주식회사 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046367A (ja) * 1983-08-24 1985-03-13 Fujitsu Ltd 蒸着装置
JPS6289826A (ja) * 1985-10-14 1987-04-24 Kobe Steel Ltd 電子ビ−ム加熱における電子ビ−ムの制御方法
JPS6289825A (ja) * 1985-10-14 1987-04-24 Kobe Steel Ltd 電子ビ−ムの制御方法
JPS6289829A (ja) * 1985-10-14 1987-04-24 Kobe Steel Ltd 電子ビ−ム加熱における電子ビ−ムの制御方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11200018A (ja) 1998-01-12 1999-07-27 Mitsubishi Electric Corp 電子銃加熱方式の真空蒸着方法
US7479632B1 (en) * 2005-02-01 2009-01-20 Trustees Of Boston University E-beam vision system for monitoring and control

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046367A (ja) * 1983-08-24 1985-03-13 Fujitsu Ltd 蒸着装置
JPS6289826A (ja) * 1985-10-14 1987-04-24 Kobe Steel Ltd 電子ビ−ム加熱における電子ビ−ムの制御方法
JPS6289825A (ja) * 1985-10-14 1987-04-24 Kobe Steel Ltd 電子ビ−ムの制御方法
JPS6289829A (ja) * 1985-10-14 1987-04-24 Kobe Steel Ltd 電子ビ−ム加熱における電子ビ−ムの制御方法

Also Published As

Publication number Publication date
JP4796154B2 (ja) 2011-10-19
US8133528B2 (en) 2012-03-13
JPWO2008093676A1 (ja) 2010-05-20
US20100247807A1 (en) 2010-09-30

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