WO2008092378A1 - A light emitting diode - Google Patents
A light emitting diode Download PDFInfo
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- WO2008092378A1 WO2008092378A1 PCT/CN2008/000178 CN2008000178W WO2008092378A1 WO 2008092378 A1 WO2008092378 A1 WO 2008092378A1 CN 2008000178 W CN2008000178 W CN 2008000178W WO 2008092378 A1 WO2008092378 A1 WO 2008092378A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- the present invention relates to a light emitting diode (LED), and more particularly to a novel light-transmitting diode for a current transport antireflection window layer and a highly reflective pattern transfer substrate, and belongs to the field of semiconductor optoelectronic technology.
- LED light emitting diode
- the structure is as shown in FIG. 1, and includes, in order from the top, the upper electrode 100, the current spreading layer 200, the upper confinement layer 300, the active region 500, the lower confinement layer 400, the buffer layer 600, and the lining. Bottom 700 and lower electrode 800.
- the main reason for the low external quantum efficiency is: First, the absorption substrate of a GaAs-based LED has a strong absorption of light generated by the active region, and the absorbed photons eventually exist in the form of heat; secondly, the LED body The refractive index of the material is much larger than the refractive index of the air. According to Hill's law, the total reflection causes the photons emitted to the interface to be emitted into the body only within the critical angle. Finally, the current density directly under the upper electrode is large, and the portion The light generated by the current can not only be emitted to the outside of the body, but instead becomes hot in the body due to the blocking or absorption of the electrode.
- the distributed Bragg (DBR) reflective layer 900 has a good reflection effect on photons with an incident angle close to 0 degrees.
- the structure of the device is shown in Figure 2.
- the method is to make an anti-reflection film 120 on the light-emitting surface of the LED, and the external quantum efficiency of the device can be increased by about 30 to 40%, as shown in Fig.
- a method of fabricating the current blocking layer 110 has been proposed, such as: ion implantation, pn junction secondary epitaxy, etc., effectively increasing the current spreading around the electrode, but the process is complicated and the cost is high, and the device structure is as shown in FIG. Figures 2, 3, and 4 These devices solve only one problem of ordinary LEDs in a single or partial way. The light extraction efficiency is still not high, and even the process is complicated. The application of LEDs is limited.
- the object of the present invention is to provide a light-emitting diode with a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure, so as to achieve the three problems of solving the above conventional LED, thereby realizing high-efficiency, high-brightness LED. Glowing.
- the current carrying antireflection window layer and the high reflection pattern transfer substrate structure light emitting diode of the present invention respectively comprise an upper electrode 100 longitudinally grown from top to bottom, a current transport antireflection window layer 111, an upper confinement layer 300, The active region 500, the lower confinement layer 400, the support 112, and the lower electrode 800, wherein the current transport antireflection window layer 111 is composed of a conductive anti-reflection layer 130, a current blocking layer 110, and a current spreading layer 201.
- the composition of the bracket 112 viewed from top to bottom is: a patterned current spreading layer 202, a conductive high light reflecting layer 140, a conductive bonding layer 150 and a transfer substrate 160, see FIG.
- the current transmitting antireflection window layer and the high reflection pattern transfer substrate structure are characterized in that the current blocking layer 110, the current spreading layer 201 and the conductive antireflection layer 130 together constitute a current transport antireflection window layer 111. , its existence, even if the current injected by the upper electrode is laterally transported to the active region outside the electrode, there is no current under the electrode, no light, which increases the luminous efficiency, reduces the heat generation, and generates the active region.
- the light acts to enhance the penetration of the photons generated in the body to the outside of the body; the current spreading layer 200, the patterned current spreading layer 202, the transfer substrate 160, the patterned transfer substrate 161, and the conductive bonding layer 150 and the conductive high-reflection layer 140 bring two outstanding functions: First, the light emitted from the active region to the substrate direction is well reflected and the photon propagation direction is changed, thereby The photon can be emitted from the upper electrode direction to the outside of the body. Second, the transfer substrate 160 or the patterned transfer substrate 161 has excellent thermal conductivity, rapidly diffuses heat generated in the body, and improves the thermal performance and lifetime of the device. reliability.
- a structure capable of enhancing the light energy can be introduced on or in the current transport antireflection window layer 111, for example, an antireflection film, a surface roughening, or the like.
- the material for conducting the light-transmitting light-emitting layer 130 is a material which is both conductive and capable of penetrating light, for example, indium tin oxide ( ⁇ ?), a conductive resin or the like.
- the material of the current blocking layer 110 in the present invention is an intrinsic semiconductor or a non-conductive resin or an insulating material such as amorphous Si, Si x N y and Si x O y , or a conductive material having an opposite conductivity to the upper electrode.
- the current blocking layer 110 is formed inside the current spreading layer 201, see Fig. 7; or above, see Fig. 6; or below, see Fig. 8, Fig. 9.
- the active region 500 is structured as a pn junction, or a pin junction, or a double heterostructure, or a single quantum well structure, or a multiple quantum well structure, a superlattice structure or a quantum dot light emitting structure, or a multilayer quantum dot structure. , or a combination of the above.
- the conductive high light reflecting layer 140 is composed of a material which is both electrically conductive and reflective, such as metal.
- the conductive bonding layer 150 is electrically conductive and can perform a good bonding, and the material thereof is a conductive adhesive or a metal.
- the transfer substrate 160 or the patterned transfer substrate 161 in the present invention is a metal or semiconductor thermal conductive material such as -Si, Cu, Al, or the like.
- a patterned current spreading layer 201 or a patterned transfer substrate 161 may be employed to form an excellent retroreflective structure to increase light output.
- the patterned current spreading layer 201 and the patterned transfer substrate 161 in the present invention are planar or rugged regular or irregular surfaces.
- the current transporting antireflection window layer and the high reflection pattern transfer substrate structure of the LED of the present invention have some important advantages compared with the conventional LED device structure (as shown in FIG. 1), and are manifested in - 1. Extraction efficiency and high optical power output
- the current blocking layer 110, the current spreading layer 201, and the conductive anti-reflecting light layer 130 are combined to form a current transporting anti-transparent window layer 111, which causes the injection current not to flow under the upper electrode 100, and the lateral transport is below the window layer.
- the source region 500 radiates a composite luminescence.
- the refractive index of the material of the conductive anti-reflecting light-emitting layer 130 is between the air and the body material, which increases the light-emitting angle, and is more favorable for the emission of photons emitted to the interface to the outside of the body, which may facilitate the addition of the anti-reflection film or the surface roughening structure, further increasing The light extraction efficiency; the patterned current spreading layer 202 or the patterned transfer substrate 161 is combined with the conductive high reflection layer 140 to function as an excellent mirror and to change the direction of photon propagation, so that the photons emitted downward After one or several reflections of the two layers of material, the direction of light exiting is changed, and eventually most of the photons are emitted from the current transporting antireflection window layer 111 to the outside of the body.
- This structure greatly increases the light extraction efficiency of the LED, thereby increasing the output optical power at the same injection current.
- the current injected from the upper electrode 100 cannot be vertically moved downward due to being blocked by the lower current blocking layer 110, and can only be laterally transported through the current spreading layer 201 and the conductive anti-reflecting light layer 130, and the current naturally flows directly below the electrode.
- the active area other than the electrode there is no current directly under the electrode. Due to the high current density directly under the upper electrode in the conventional LED, a large number of photons generated by this part of the current can not be emitted to the outside of the body, but due to the shielding, reflection and absorption of the upper electrode. Or absorbed in the body, and finally become hot in the body, heat, heat, limit the performance of the device and the application of LED.
- the current transporting the antireflection window layer and the high reflection pattern transfer substrate of the light emitting diode greatly reduce the loss of the injection current in the body and the generation of ineffective photons, and also reduce the generation of heat, on the other hand, transferring the substrate 160 or the pattern
- the transfer substrate 161 is an excellent thermal conductor, which can quickly dissipate heat generated in the body, is more conducive to the illumination of the LED, and also ensures the thermal characteristics and reliability of the device.
- the diameter of the LED electrode is 80-1 ⁇ . Therefore, as the size of the device decreases, the ratio of the current under the electrode (which generates ineffective photons and heat generation) to the total injection current increases, and the light extraction efficiency and optical power output decrease. Under the same injection current, the current transporting the antireflection window layer and the light-emitting diode of the ⁇ -reflecting pattern transfer substrate have high light extraction efficiency and high optical power output, and almost no current under the electrode and invalid photons generated in the body heat, so The output characteristics of the device are wireless with the size of the device. In small device sizes, high light extraction efficiency and optical power output can be achieved, while reducing current loss and heat generation under the electrode. Has excellent thermal properties and reliability.
- FIG. 1 Schematic diagram of the conventional structure LED
- Figure 2 Schematic diagram of the device structure after introducing the DBR reflective layer on the basis of the conventional structure LED
- Figure 3 Schematic diagram of a device structure incorporating an AR coating on a conventional LED structure
- Figure 4 Schematic diagram of the LED structure after the current blocking layer 110 is introduced above the upper confinement layer 300 and below the upper current spreading layer 200
- Fig. 5 is a schematic view showing the structure of an epitaxial wafer of a light-transmission diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate.
- Fig. 6 Light-emitting diode structure of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention Schematic (current blocking layer 110 is located above current spreading layer 201)
- Fig. 7 is a schematic view showing the structure of a light-transmitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate in the present invention (the current blocking layer 110 is located inside the current spreading layer 201)
- Figure 8 is a schematic view showing the structure of a light-emitting diode of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention (the current blocking layer 110 is located below the current expansion layer 201)
- Figure 9 is a schematic diagram of the structure of a light-emitting diode of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention (using a patterned transfer substrate 161)
- 100 is the upper electrode
- 110 is the current blocking layer
- 130 is the conductive anti-reflecting light layer
- 201 is the current spreading layer
- 300 is the upper limiting layer
- 500 is the active area
- 400 is the lower limiting layer
- 202 is the graphic
- 140 is a conductive high light reflecting layer
- 150 is a conductive bonding layer
- 160 is a transfer substrate
- 161 is a patterned transfer substrate
- 800 is a lower electrode
- 200 is an upper current spreading layer
- 600 is
- 700 is a substrate
- 900 is a DBR reflective layer
- 120 is an anti-reflection film
- 111 is a current transport anti-reflection window layer
- 112 is a support.
- the AlGalnP LED is taken as an example.
- the device consists of the following parts, the upper electrode 100, the electric Flow blocking layer 110, conductive anti-reflection layer 130, current spreading layer 201, upper confinement layer 300, active region 500, lower confinement layer 400, patterned current spreading layer 202, conductive high reflective layer 140, conductive bonding
- the layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
- a substrate 700 formed of a material capable of matching AlGalnP such as GaAs On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer are sequentially epitaxially grown by a metal organic chemical vapor deposition (MOVCD) method. 400, the active region 500, the upper limiting layer 300, the upper current spreading layer 200, thus obtaining an epitaxial wafer of the AlGalnP light emitting diode, as shown in FIG. 5;
- MOVCD metal organic chemical vapor deposition
- a layer of metal on the conductive anti-reflecting light-emitting layer 130 such as: AuGeNi, and etching a circular electrode to obtain the upper electrode 100, and vapor-depositing a layer below the transfer substrate 160
- cleavage and pressure welding dicing, cleavage, obtained a single die, pressed on the tube holder and packaged, completed the production of LED.
- the AlGalnP LED is taken as an example.
- the device consists of the following parts, the upper electrode 100, the electric Flow blocking layer 110, conductive anti-reflection layer 130, current spreading layer 201, upper confinement layer 300, active region 500, lower confinement layer 400, patterned current spreading layer 202, conductive high reflective layer 140, conductive bonding
- the layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
- Epitaxial wafer growth On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, a lower confinement layer 400, an active region 500, and an upper limit are sequentially epitaxially grown by a MOVCD system. Layer 300, upper current expansion layer 200, thus obtaining an epitaxial wafer of AlGalnP light emitting diode, as shown in FIG. 5;
- the material may be ITO;
- the AlGalnP LED is taken as an example.
- the device is composed of the following parts, an upper electrode 100, a current blocking layer 110, a conductive anti-reflection layer 130, a current spreading layer 201, an upper limiting layer 300, an active region 500,
- the lower confinement layer 400, the patterned current spreading layer 202, the conductive high light reflecting layer 140, the conductive bonding layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
- Epitaxial wafer growth On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, 185, a buffer layer 600, a current spreading layer 201, a lower confinement layer 400, an active region 500, are sequentially epitaxially grown by a MOVCD system. Restricting layer 300, upper current spreading layer 200, thus obtaining an epitaxial wafer of AlGalnP light emitting diode, as shown in FIG. 5;
- Photolithography is performed on the current spreading layer 201 and the current is blocked by ion implantation.
- the material may be ITO;
- the AlGalnP LED is taken as an example.
- the device is composed of the following parts, an upper electrode 100, an electric 205 flow blocking layer 110, a conductive anti-reflection layer 130, a current spreading layer 201, an upper confinement layer 300, an active region 500, a lower confinement layer 400, and an upper current extension.
- the layer 200, the conductive high light reflecting layer 140, the conductive bonding layer 150, the patterned transfer substrate 161 and the lower electrode 800 are prepared and processed as follows: 1.
- a substrate 700 formed of a material capable of matching AlGalnP such as GaAs On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer 400 are sequentially epitaxially grown by a MOVCD system.
- a MOVCD system On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer 400 are sequentially epitaxially grown by a MOVCD system.
- the material may be ITO;
- a layer of metal such as AuGeNi
- AuGeNi a layer of metal
- etching a circular electrode to obtain an upper electrode 100, which is also vapor-deposited under the patterned transfer substrate 161.
- a layer of metal such as AuZnAu, forms the lower electrode 800, completing the fabrication of the upper and lower electrodes;
Abstract
A LED with a current transport anti-reflecting window layer and a patterned transferring substrate. It comprises an upper electrode (100), a current transport anti-reflecting window layer (111), an upper confining layer (300), an active area (500), a lower confining layer (400), a bracket (112) and a lower electrode (800). The current transport anti -reflecting window layer (111) comprises an electric anti-reflecting light emitting layer (130), a current blocking layer (110) and a current spreading layer (201). The bracket comprises a patterned current spreading layer (202), an electric high light reflecting layer (140), an electric bonding layer (150) and a transferring substrate (160).
Description
一种发光二极管 技术领域 Light-emitting diode
本发明涉及一种发光二极管 (light emitting diode, LED), 具体地说是一种新型的 电流输运增透窗口层和高反射图形转移衬底的发光二极管，属于半导体光电子技术领 域。 The present invention relates to a light emitting diode (LED), and more particularly to a novel light-transmitting diode for a current transport antireflection window layer and a highly reflective pattern transfer substrate, and belongs to the field of semiconductor optoelectronic technology.
背景技术 Background technique
目前， 高亮度可见光 LED作为一种新型光源在汽车车灯、 户外显示、 景观照明 以及光信息处理等领域有着巨大的应用市场。 90年代后， AlGalnP和 GaN材料的研 究与幵发， 使 LED从低亮度向高亮度乃至超高亮度发展， 并且波段覆盖全部可见光 区域。 提高 LED发光强度的一个重要任务就是提高光效， 包括内部量子效率和外部 量子效率， 虽然如今各种外延生长与控制技术已经可以将内部量子效率 （Internal quantum efficiency, ηίη,) 提高至 90%甚至接近 100%， 但是外部量子效率 （External quantum efficiency, ηεχ1)却很低， 有的甚至只有 10%或更低， 这严重限制了 LED的发 展与应用。 At present, high-brightness visible light LED has a huge application market in the fields of automobile lamp, outdoor display, landscape lighting and optical information processing as a new type of light source. After the 1990s, research and development of AlGalnP and GaN materials led to the development of LEDs from low to high brightness to ultra-high brightness, and the band covered all visible areas. An important task to improve the luminous intensity of LEDs is to improve the light efficiency, including internal quantum efficiency and external quantum efficiency, although various epitaxial growth and control techniques can now increase internal quantum efficiency (η ίη ) to 90%. Even close to 100%, but the external quantum efficiency (η ε χ 1 ) is very low, and some even only 10% or lower, which severely limits the development and application of LED.
对于普通结构的 LED, 结构如图 1所示， 从上往下看依次包括： 上电极 100、 电 流扩展层 200、 上限制层 300、 有源区 500、 下限制层 400、 缓冲层 600、 衬底 700和 下电极 800。造成其外部量子效率较低的原因主要是： 首先， 如 GaAs基 LED的吸收 衬底对有源区产生的光有着很强的吸收作用，吸收的光子最终以热的形式存在;其次， LED 体材料的折射率比空气折射率大很多， 根据希尔定律， 全反射作用使得发射到 界面的光子只有处于临界角以内才能发射到体外； 最后， 上电极正下方的电流密度很 大， 而该部分电流产生的光不但不能发射到体外， 反而由于电极的阻挡或吸收， 在体 内变成热。 For a conventional structure LED, the structure is as shown in FIG. 1, and includes, in order from the top, the upper electrode 100, the current spreading layer 200, the upper confinement layer 300, the active region 500, the lower confinement layer 400, the buffer layer 600, and the lining. Bottom 700 and lower electrode 800. The main reason for the low external quantum efficiency is: First, the absorption substrate of a GaAs-based LED has a strong absorption of light generated by the active region, and the absorbed photons eventually exist in the form of heat; secondly, the LED body The refractive index of the material is much larger than the refractive index of the air. According to Hill's law, the total reflection causes the photons emitted to the interface to be emitted into the body only within the critical angle. Finally, the current density directly under the upper electrode is large, and the portion The light generated by the current can not only be emitted to the outside of the body, but instead becomes hot in the body due to the blocking or absorption of the electrode.
目前， 为了解决普通 LED 的上述三个问题， 国内外均提出了各种各样的解决方 案。例如， 针对吸收衬底的问题， 有人在图 1所示的缓冲层和下限制层之间生长一层
分布布拉格 （DBR) 反射层 900， 对入射角接近 0度的光子有着很好的反射作用， 器 件结构如图 2所示； 对于 LED体材料折射率与空气折射率相差较大的问题， 人们提 出的办法是在 LED的出光面制作一层增透膜 120， 器件的外量子效率能增加约 30〜 40%, 如图 3所示； 最后， 关于上电极正下方电流密度较大的问题， 国外有人提出过 制作电流阻挡层 110的办法， 如： 采用离子注入， p-n结二次外延等方法有效地增加 了电流向电极周围的扩展， 但工艺复杂， 成本高， 器件结构如图 4所示。 图 2、 3、 4 这些结构的器件都只是单一或部分地解决了普通 LED的一个问题， 光提取效率仍不 高， 甚至工艺复杂等， LED的应用受到一定的限制。 At present, in order to solve the above three problems of ordinary LEDs, various solutions have been proposed at home and abroad. For example, for the problem of absorbing a substrate, a layer is grown between the buffer layer and the lower confinement layer shown in FIG. The distributed Bragg (DBR) reflective layer 900 has a good reflection effect on photons with an incident angle close to 0 degrees. The structure of the device is shown in Figure 2. For the problem that the refractive index of the LED body material differs greatly from the refractive index of the air, it is proposed The method is to make an anti-reflection film 120 on the light-emitting surface of the LED, and the external quantum efficiency of the device can be increased by about 30 to 40%, as shown in Fig. 3; finally, the problem of large current density directly under the upper electrode is abroad. A method of fabricating the current blocking layer 110 has been proposed, such as: ion implantation, pn junction secondary epitaxy, etc., effectively increasing the current spreading around the electrode, but the process is complicated and the cost is high, and the device structure is as shown in FIG. Figures 2, 3, and 4 These devices solve only one problem of ordinary LEDs in a single or partial way. The light extraction efficiency is still not high, and even the process is complicated. The application of LEDs is limited.
发明内容 Summary of the invention
本发明的目的在于提供一种电流输运增透窗口层和高反射图形转移衬底结构的 发光二极管， 以达到同时解决上述普通 LED存在的三个问题的目的， 从而实现高效、 高亮度的 LED发光。 The object of the present invention is to provide a light-emitting diode with a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure, so as to achieve the three problems of solving the above conventional LED, thereby realizing high-efficiency, high-brightness LED. Glowing.
本发明的电流输运增透窗口层和高反射图形转移衬底结构的发光二极管， 分别包 括从上至下依次纵向生长的上电极 100、 电流输运增透窗口层 111、 上限制层 300、 有源区 500、 下限制层 400、 支架 112、 和下电极 800， 其中， 电流输运增透窗口层 111 由导电增透出光层 130、 电流阻挡层 110和电流扩展层 201共同构成。 支架 112 从上往下看的组成为： 图形化的电流扩展层 202、导电高反光层 140、导电键合层 150 和转移衬底 160， 参见图 6; 或为： 上电流扩展层 200、 导电键合层 150、 导电高反光 层 140和图形化的转移衬底 161， 参见图 9。 该电流输运增透窗口层和高反射图形转 移衬底结构的发光二极管的特征在于： 电流阻挡层 110、 电流扩展层 201以及导电增 透出光层 130共同构成电流输运增透窗口层 111， 它的存在， 既使上电极注入的电流 横向输运扩展到电极以外的有源区， 电极下无电流， 不发光， 增加了发光效率， 减少 了热的产生， 又对有源区产生的光起到了增透的作用， 使体内产生的光子更多地发射 到体外； 电流扩展层 200、 图形化的电流扩展层 202、 转移衬底 160、 图形化的转移 衬底 161、 导电键合层 150和导电高反射层 140带来了两个突出的作用： 一是对有源 区发射到衬底方向的光起到了很好的反射作用和改变光子传播方向的作用，从而更多
的光子能够从上电极方向发射到体外， 二是转移衬底 160 或图形化的转移衬底 161 有着优良的导热性， 对体内产生的热量迅速地进行扩散， 提高了器件的热性能、寿命 及可靠性。 The current carrying antireflection window layer and the high reflection pattern transfer substrate structure light emitting diode of the present invention respectively comprise an upper electrode 100 longitudinally grown from top to bottom, a current transport antireflection window layer 111, an upper confinement layer 300, The active region 500, the lower confinement layer 400, the support 112, and the lower electrode 800, wherein the current transport antireflection window layer 111 is composed of a conductive anti-reflection layer 130, a current blocking layer 110, and a current spreading layer 201. The composition of the bracket 112 viewed from top to bottom is: a patterned current spreading layer 202, a conductive high light reflecting layer 140, a conductive bonding layer 150 and a transfer substrate 160, see FIG. 6; or: an upper current spreading layer 200, conductive Bonding layer 150, conductive high light reflecting layer 140 and patterned transfer substrate 161 are shown in FIG. The current transmitting antireflection window layer and the high reflection pattern transfer substrate structure are characterized in that the current blocking layer 110, the current spreading layer 201 and the conductive antireflection layer 130 together constitute a current transport antireflection window layer 111. , its existence, even if the current injected by the upper electrode is laterally transported to the active region outside the electrode, there is no current under the electrode, no light, which increases the luminous efficiency, reduces the heat generation, and generates the active region. The light acts to enhance the penetration of the photons generated in the body to the outside of the body; the current spreading layer 200, the patterned current spreading layer 202, the transfer substrate 160, the patterned transfer substrate 161, and the conductive bonding layer 150 and the conductive high-reflection layer 140 bring two outstanding functions: First, the light emitted from the active region to the substrate direction is well reflected and the photon propagation direction is changed, thereby The photon can be emitted from the upper electrode direction to the outside of the body. Second, the transfer substrate 160 or the patterned transfer substrate 161 has excellent thermal conductivity, rapidly diffuses heat generated in the body, and improves the thermal performance and lifetime of the device. reliability.
本发明中在电流输运增透窗口层 111的上面或里面还能引入能够对光能起到增透 作用的结构， 例如： 增透膜， 表面粗化等。 In the present invention, a structure capable of enhancing the light energy can be introduced on or in the current transport antireflection window layer 111, for example, an antireflection film, a surface roughening, or the like.
本发明中导电增透出光层 130所用的材料是既能导电又能起到对光进行增透作用 的材料， 例如： 氧化铟锡 ατο)， 导电树脂等。 In the present invention, the material for conducting the light-transmitting light-emitting layer 130 is a material which is both conductive and capable of penetrating light, for example, indium tin oxide (α?), a conductive resin or the like.
本发明中电流阻挡层 110 的材料是本征半导体或不导电树脂或不掺杂非晶 Si,SixNy和 SixOy等绝缘材料， 或导电特性与上电极相反的导电材料。 The material of the current blocking layer 110 in the present invention is an intrinsic semiconductor or a non-conductive resin or an insulating material such as amorphous Si, Si x N y and Si x O y , or a conductive material having an opposite conductivity to the upper electrode.
本发明中电流阻挡层 110做在电流扩展层 201的里面， 参见图 7; 或上面， 参见 图 6; 或下面， 参见图 8、 图 9。 In the present invention, the current blocking layer 110 is formed inside the current spreading layer 201, see Fig. 7; or above, see Fig. 6; or below, see Fig. 8, Fig. 9.
本发明中有源区 500结构为 p-n结， 或 p-i-n结， 或双异质结构， 或单量子阱结 构， 或多量子阱结构， 超晶格结构或量子点发光结构， 或多层量子点结构， 或上述各， 种的组合结构。 In the present invention, the active region 500 is structured as a pn junction, or a pin junction, or a double heterostructure, or a single quantum well structure, or a multiple quantum well structure, a superlattice structure or a quantum dot light emitting structure, or a multilayer quantum dot structure. , or a combination of the above.
本发明中导电高反光层 140由既能导电又能反光的材料组成， 例如： 金属等。 本发明中导电键合层 150既能导电又能起到很好的键合作用，其材料是导电胶或 金属等。 In the present invention, the conductive high light reflecting layer 140 is composed of a material which is both electrically conductive and reflective, such as metal. In the present invention, the conductive bonding layer 150 is electrically conductive and can perform a good bonding, and the material thereof is a conductive adhesive or a metal.
本发明中转移衬底 160或图形化的转移衬底 161是金属或半导体热导材料，例如- Si、 Cu、 A1等。 The transfer substrate 160 or the patterned transfer substrate 161 in the present invention is a metal or semiconductor thermal conductive material such as -Si, Cu, Al, or the like.
本发明中可采用图形化的电流扩展层 201或图形化的转移衬底 161， 形成优良的 反光结构而增加光输出。 In the present invention, a patterned current spreading layer 201 or a patterned transfer substrate 161 may be employed to form an excellent retroreflective structure to increase light output.
本发明中图形化的电流扩展层 201和图形化的转移衬底 161是平面或凹凸不平的 规则的或不规则的表面。 The patterned current spreading layer 201 and the patterned transfer substrate 161 in the present invention are planar or rugged regular or irregular surfaces.
本发明所述的电流输运增透窗口层和高反射图形转移衬底结构的 LED 与常规 LED器件结构 （如图 1所示） 相比， 有着一些重要的优越性， 表现在- 1. 高光提取效率及高光功率输出
电流阻挡层 110、 电流扩展层 201、 导电增透出光层 130共同构成的电流输运增 透窗口层 111， 它使得注入电流不向上电极 100下方流动， 而横向输运在窗口层下方 的有源区 500内辐射复合发光。导电增透出光层 130材料的折射率处于空气和体材料 之间， 增加了出光角度， 更有利于发射到界面的光子发射到体外， 可利于加增透膜或 表面粗化结构，进一步增加了光提取效率； 图形化的电流扩展层 202或图形化的转移 衬底 161与导电高反射层 140结合，起到了优良的反光镜的作用和改变光子传播方向 的作用， 使向下发射的光子经过该两层材料的一次或几次反射， 改变了出光方向， 最 终绝大部分光子都从电流输运增透窗口层 111 发射到体外。 该结构大大增加了 LED 的光提取效率， 从而增加了相同注入电流下的输出光功率。 The current transporting antireflection window layer and the high reflection pattern transfer substrate structure of the LED of the present invention have some important advantages compared with the conventional LED device structure (as shown in FIG. 1), and are manifested in - 1. Extraction efficiency and high optical power output The current blocking layer 110, the current spreading layer 201, and the conductive anti-reflecting light layer 130 are combined to form a current transporting anti-transparent window layer 111, which causes the injection current not to flow under the upper electrode 100, and the lateral transport is below the window layer. The source region 500 radiates a composite luminescence. The refractive index of the material of the conductive anti-reflecting light-emitting layer 130 is between the air and the body material, which increases the light-emitting angle, and is more favorable for the emission of photons emitted to the interface to the outside of the body, which may facilitate the addition of the anti-reflection film or the surface roughening structure, further increasing The light extraction efficiency; the patterned current spreading layer 202 or the patterned transfer substrate 161 is combined with the conductive high reflection layer 140 to function as an excellent mirror and to change the direction of photon propagation, so that the photons emitted downward After one or several reflections of the two layers of material, the direction of light exiting is changed, and eventually most of the photons are emitted from the current transporting antireflection window layer 111 to the outside of the body. This structure greatly increases the light extraction efficiency of the LED, thereby increasing the output optical power at the same injection current.
2. 优良的热特性及可靠性 2. Excellent thermal characteristics and reliability
一方面， 从上电极 100注入的电流由于被下方电流阻挡层 110阻挡不能垂直向下 运动， 只能通过电流扩展层 201和导电增透出光层 130横向输运， 电流自然地流向电 极正下方以外的有源区， 电极正下方无电流， 由于在常规 LED中上电极正下方的电 流密度很大， 该部分电流产生的大量光子不但不能发射到体外， 反而由于上电极的遮 挡、 反射、 吸收或在体内吸收， 最后在体内变成热， 发热、 升温， 限制了器件性能的 提高及 LED的应用。 电流输运增透窗口层和高反射图形转移衬底的发光二极管， 大 大减少了注入电流在体内的损耗和无效光子的产生， 也减少了热的产生， 另一方面， 转移衬底 160或图形化的转移衬底 161是一种优良的热导体，对体内产生的热量能够 迅速地耗散， 更有利于 LED的发光， 同时也保证了器件的热特性及可靠性。 On the one hand, the current injected from the upper electrode 100 cannot be vertically moved downward due to being blocked by the lower current blocking layer 110, and can only be laterally transported through the current spreading layer 201 and the conductive anti-reflecting light layer 130, and the current naturally flows directly below the electrode. In the active area other than the electrode, there is no current directly under the electrode. Due to the high current density directly under the upper electrode in the conventional LED, a large number of photons generated by this part of the current can not be emitted to the outside of the body, but due to the shielding, reflection and absorption of the upper electrode. Or absorbed in the body, and finally become hot in the body, heat, heat, limit the performance of the device and the application of LED. The current transporting the antireflection window layer and the high reflection pattern transfer substrate of the light emitting diode greatly reduce the loss of the injection current in the body and the generation of ineffective photons, and also reduce the generation of heat, on the other hand, transferring the substrate 160 or the pattern The transfer substrate 161 is an excellent thermal conductor, which can quickly dissipate heat generated in the body, is more conducive to the illumination of the LED, and also ensures the thermal characteristics and reliability of the device.
3. 高性能、 高产量的器件 3. High performance, high throughput devices
通常 LED电极的直径在 80-1 ΙΟμιη, 因此，随着器件尺寸的减小， 电极下电流（产 生无效光子和发热）所占总注入电流的比例上升， 光提取效率和光功率输出下降。相 同注入电流下，电流输运增透窗口层及髙反射图形转移衬底的发光二极管有着高的光 提取效率及高光功率输出， 几乎没有电极下的电流及其产生的无效光子在体内发热， 所以器件的输出特性与器件的尺寸无线性关系，在小的器件尺寸下， 同样可以得到高 的光提取效率和光功率输出， 同时也大大减少了电极下方电流损耗和热产生，使器件
具有优良的热特性及可靠性。在相同的制作成本和工艺条件下， 器件尺寸越小， 同样 尺寸的外延片 LED管芯的产量越高， 因此， 电流输运增透窗口层和高反射图形转移 衬底的发光二极管的产量高、 性能高， 从而产值也高， 尤其适合于大批量生产。 附图的简要说明： Usually, the diameter of the LED electrode is 80-1 ΙΟμιη. Therefore, as the size of the device decreases, the ratio of the current under the electrode (which generates ineffective photons and heat generation) to the total injection current increases, and the light extraction efficiency and optical power output decrease. Under the same injection current, the current transporting the antireflection window layer and the light-emitting diode of the 髙-reflecting pattern transfer substrate have high light extraction efficiency and high optical power output, and almost no current under the electrode and invalid photons generated in the body heat, so The output characteristics of the device are wireless with the size of the device. In small device sizes, high light extraction efficiency and optical power output can be achieved, while reducing current loss and heat generation under the electrode. Has excellent thermal properties and reliability. At the same fabrication cost and process conditions, the smaller the device size, the higher the yield of the same size epitaxial LED die, and therefore the higher the yield of the light-transmission window layer and the highly reflective pattern transfer substrate. High performance and high output value, especially suitable for mass production. Brief description of the drawing:
图 1 : 常规结构 LED的结构示意图 Figure 1: Schematic diagram of the conventional structure LED
图 2: 在常规结构 LED基础上引入 DBR反光层后的器件结构示意图 Figure 2: Schematic diagram of the device structure after introducing the DBR reflective layer on the basis of the conventional structure LED
图 3: 在常规结构 LED基础上引入增透膜结构的器件结构示意图 Figure 3: Schematic diagram of a device structure incorporating an AR coating on a conventional LED structure
图 4:在上限制层 300的上方与上电流扩展层 200的下方引入电流阻挡层 110后的 LED 结构示意图 Figure 4: Schematic diagram of the LED structure after the current blocking layer 110 is introduced above the upper confinement layer 300 and below the upper current spreading layer 200
图 5: 电流输运增透窗口层和高反射图形转移衬底的发光二极管的外延片结构示意图 图 6: 本发明中的电流输运增透窗口层和高反射图形转移衬底的发光二极管结构示意 图 （电流阻挡层 110位于电流扩展层 201的上方） Fig. 5 is a schematic view showing the structure of an epitaxial wafer of a light-transmission diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate. Fig. 6: Light-emitting diode structure of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention Schematic (current blocking layer 110 is located above current spreading layer 201)
图 7: 本发明中的电流输运增透窗口层和高反射图形转移衬底的发光二极管结构示意 图 （电流阻挡层 110位于电流扩展层 201的内部） Fig. 7 is a schematic view showing the structure of a light-transmitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate in the present invention (the current blocking layer 110 is located inside the current spreading layer 201)
图 8: 本发明中的电流输运增透窗口层和高反射图形转移衬底的发光二极管结构示意 图 （电流阻挡层 110位于电流扩展层 201的下方） Figure 8 is a schematic view showing the structure of a light-emitting diode of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention (the current blocking layer 110 is located below the current expansion layer 201)
图 9: 本发明中的电流输运增透窗口层和高反射图形转移衬底的发光二极管结构示意 图 （采用图形化的转移衬底 161 ) Figure 9 is a schematic diagram of the structure of a light-emitting diode of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention (using a patterned transfer substrate 161)
图中： 100为上电极、 110为电流阻挡层、 130为导电增透出光层、 201为电流扩 展层、 300为上限制层、 500为有源区、 400为下限制层、 202为图形化后的电流扩展 层、 140为导电高反光层、 150为导电键合层、 160为转移衬底、 161为图形化的转移 衬底、 800为下电极、 200为上电流扩展层、 600为缓冲层、 700为衬底、 900为 DBR 反射层、 120为增透膜、 111为电流输运增透窗口层、 112为支架。 In the figure: 100 is the upper electrode, 110 is the current blocking layer, 130 is the conductive anti-reflecting light layer, 201 is the current spreading layer, 300 is the upper limiting layer, 500 is the active area, 400 is the lower limiting layer, 202 is the graphic The current spreading layer, 140 is a conductive high light reflecting layer, 150 is a conductive bonding layer, 160 is a transfer substrate, 161 is a patterned transfer substrate, 800 is a lower electrode, 200 is an upper current spreading layer, and 600 is The buffer layer, 700 is a substrate, 900 is a DBR reflective layer, 120 is an anti-reflection film, 111 is a current transport anti-reflection window layer, and 112 is a support.
实施发明的最佳实施方式 BEST MODE FOR CARRYING OUT THE INVENTION
实施例 1 Example 1
如图 6所示， 以 AlGalnP LED为例。 该器件由以下各部分组成， 上电极 100、 电
流阻挡层 110、 导电增透出光层 130、 电流扩展层 201、 上限制层 300、 有源区 500、 下限制层 400、 图形化的电流扩展层 202、 导电高反光层 140、 导电键合层 150、转移 衬底 160和下电极 800， 其制备过程和方法如下： As shown in Fig. 6, the AlGalnP LED is taken as an example. The device consists of the following parts, the upper electrode 100, the electric Flow blocking layer 110, conductive anti-reflection layer 130, current spreading layer 201, upper confinement layer 300, active region 500, lower confinement layer 400, patterned current spreading layer 202, conductive high reflective layer 140, conductive bonding The layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
1、外延片的生长： 在 GaAs等能够与 AlGalnP匹配的材料形成的衬底 700上， 利 用金属有机化学气相淀积 （MOVCD) 的方法依次外延生长缓冲层 600， 电流扩展层 201， 下限制层 400， 有源区 500， 上限制层 300， 上电流扩展层 200， 这样就得到了 AlGalnP发光二极管的外延片， 图 5所示； 1. Growth of epitaxial wafer: On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer are sequentially epitaxially grown by a metal organic chemical vapor deposition (MOVCD) method. 400, the active region 500, the upper limiting layer 300, the upper current spreading layer 200, thus obtaining an epitaxial wafer of the AlGalnP light emitting diode, as shown in FIG. 5;
2、 器件的制备， 具体的工艺步骤是： 2. The preparation of the device, the specific process steps are:
a. 将生长好的外延片清洗并吹干后， 在上电流扩展层 200上光刻， 带胶进行湿 法或干法 （例如： 耦合等离子体刻蚀， ICP) 刻蚀， 得到了所需要的图形化的电流 扩展层 202; a. After the grown epitaxial wafer is cleaned and dried, photolithography is performed on the upper current spreading layer 200, and the wet or dry method (for example, coupled plasma etching, ICP) etching is performed to obtain the required Graphical current spreading layer 202;
b. 在图形化的电流扩展层 202 上面通过蒸发或溅射的办法镀上导电高反光层 140， 并与转移衬底 160通过导电键合层 150键合在一起； b. plating a conductive high light reflecting layer 140 on the patterned current spreading layer 202 by evaporation or sputtering, and bonding with the transfer substrate 160 through the conductive bonding layer 150;
c 通过腐蚀或剥离的办法， 将外延生长用的衬底 700和缓冲层 600去掉， 露出 电流扩展层 201 ; c removing the substrate 700 and the buffer layer 600 for epitaxial growth by etching or stripping to expose the current spreading layer 201;
d. 在电流扩展层 201 的上面通过等离子体增强化学气相淀积*** （PECVD) 淀积一层 Si02， 光刻并腐蚀出电流阻挡层 110; 然后再蒸镀上一层导电增透出光层 130, 其材料可以是氧化铟锡 （ITO); d. depositing a layer of SiO 2 on the top of the current spreading layer 201 by plasma enhanced chemical vapor deposition (PECVD), photolithography and etching the current blocking layer 110; and then vapor-depositing a layer of conductive light-enhancing light Layer 130, the material of which may be indium tin oxide (ITO);
e. 在导电增透出光层 130的上面蒸镀上一层金属， 如： AuGeNi, 并光刻出圆 形电极，得到了上电极 100，在转移衬底 160的下面也蒸镀上一层金属，如 AuZnAu, 形成下电极 800， 完成了上下电极的制作； e. depositing a layer of metal on the conductive anti-reflecting light-emitting layer 130, such as: AuGeNi, and etching a circular electrode to obtain the upper electrode 100, and vapor-depositing a layer below the transfer substrate 160 A metal, such as AuZnAu, forms the lower electrode 800, completing the fabrication of the upper and lower electrodes;
3、 解理与压焊： 划片、 解理， 得到了单个的管芯， 压悍在管座上并封装， 完成 了 LED的制作。 通过上、 下电极注入电流， 就可以实现高效、 高亮度的电流输运增 透窗口层和高反射图形转移衬底的 LED发光。 3, cleavage and pressure welding: dicing, cleavage, obtained a single die, pressed on the tube holder and packaged, completed the production of LED. By injecting current through the upper and lower electrodes, it is possible to achieve efficient, high-brightness current transport of the transmissive window layer and high-reflection pattern transfer substrate LED illumination.
实施例 2 Example 2
如图 7所示， 以 AlGalnP LED为例。 该器件由以下各部分组成， 上电极 100、 电
流阻挡层 110、 导电增透出光层 130、 电流扩展层 201、 上限制层 300、 有源区 500、 下限制层 400、 图形化的电流扩展层 202、 导电高反光层 140、 导电键合层 150、 转移 衬底 160和下电极 800, 其制备过程和方法如下： As shown in Fig. 7, the AlGalnP LED is taken as an example. The device consists of the following parts, the upper electrode 100, the electric Flow blocking layer 110, conductive anti-reflection layer 130, current spreading layer 201, upper confinement layer 300, active region 500, lower confinement layer 400, patterned current spreading layer 202, conductive high reflective layer 140, conductive bonding The layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
1. 外延片的生长：在 GaAs等能够与 AlGalnP匹配的材料形成的衬底 700上， 利用 MOVCD***依次外延生长缓冲层 600， 电流扩展层 201， 下限制层 400， 有 源区 500， 上限制层 300， 上电流扩展层 200， 这样就得到了 AlGalnP发光二极管 的外延片， 图 5所示； 1. Epitaxial wafer growth: On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, a lower confinement layer 400, an active region 500, and an upper limit are sequentially epitaxially grown by a MOVCD system. Layer 300, upper current expansion layer 200, thus obtaining an epitaxial wafer of AlGalnP light emitting diode, as shown in FIG. 5;
2. 器件的制备， 具体的工艺步骤是， 2. The preparation of the device, the specific process steps are,
a. 将生长好的外延片清洗并吹干后， 在上电流扩展层 200上光刻， 带胶进行湿 法或干法 （如： ICP) 刻蚀， 得到了所需要的图形化的电流扩展层 202; a. After the grown epitaxial wafer is cleaned and dried, photolithography is performed on the upper current spreading layer 200, and wet or dry (eg, ICP) etching is performed with a glue to obtain a desired patterned current expansion. Layer 202;
b. 在图形化的电流扩展层 202 上面通过蒸发或溅射的办法镀上导电高反光层 140， 并与转移衬底 160通过导电键合层 150键合在一起； b. plating a conductive high light reflecting layer 140 on the patterned current spreading layer 202 by evaporation or sputtering, and bonding with the transfer substrate 160 through the conductive bonding layer 150;
c 通过腐蚀或剥离的办法， 将外延生长用的衬底 700和缓冲层 600去掉， 露出 电流扩展层 201 ; c removing the substrate 700 and the buffer layer 600 for epitaxial growth by etching or stripping to expose the current spreading layer 201;
d. 在电流扩展层 201 的上面先光刻后刻蚀并带胶在 PECVD***上淀积一层 Si02, 剥离得到电流阻挡层 110; 然后再蒸镀上一层导电增透出光层 130， 其材料 可以是 ITO; d. After lithography on the current spreading layer 201, etching and laminating a layer of Si0 2 on the PECVD system, stripping to obtain a current blocking layer 110; and then vapor-depositing a layer of conductive anti-reflecting layer 130 , the material may be ITO;
e. 在导电增透出光层 130的上面蒸镀上一层金属， 如 AuGeNi， 并光刻出圆形 电极， 得到了上电极 100， 在转移衬底 160的下面也蒸铍上一层金属， 如 AuZnAu， 形成下电极 800， 完成了上下电极的制作； e. depositing a layer of metal, such as AuGeNi, on the conductive anti-reflecting light-emitting layer 130, and etching a circular electrode to obtain the upper electrode 100, and evaporating a metal layer under the transfer substrate 160 , such as AuZnAu, forming the lower electrode 800, completing the fabrication of the upper and lower electrodes;
3. 解理与压焊： 划片、 解理， 得到了单个的管芯， 压焊在管座上并封装， 完 成了 LED的制作。 通过上、 下电极注入电流， 就可以实现高效、 高亮度的电流输 运增透窗口层和高反射图形转移衬底的 LED发光。 3. Cleavage and pressure welding: dicing, cleavage, obtaining a single die, pressure welding on the tube holder and packaging, completed the production of LED. By injecting current through the upper and lower electrodes, high-efficiency, high-brightness current transmission of the antireflection window layer and high-reflection pattern transfer substrate LED illumination can be achieved.
实施例 3 Example 3
如图 8所示， 以 AlGalnP LED为例。 该器件由以下各部分组成， 上电极 100、 电 流阻挡层 110、 导电增透出光层 130、 电流扩展层 201、 上限制层 300、 有源区 500、
下限制层 400、 图形化的电流扩展层 202、 导电高反光层 140、 导电键合层 150、 转移 衬底 160和下电极 800, 其制备过程和方法如下： As shown in Fig. 8, the AlGalnP LED is taken as an example. The device is composed of the following parts, an upper electrode 100, a current blocking layer 110, a conductive anti-reflection layer 130, a current spreading layer 201, an upper limiting layer 300, an active region 500, The lower confinement layer 400, the patterned current spreading layer 202, the conductive high light reflecting layer 140, the conductive bonding layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
1. 外延片的生长： 在 GaAs等能够与 AlGalnP匹配的材料形成的衬底 700上， 185 利用 MOVCD***依次外延生长缓冲层 600， 电流扩展层 201， 下限制层 400， 有 源区 500， 上限制层 300, 上电流扩展层 200， 这样就得到了 AlGalnP发光二极管 的外延片， 图 5所示； 1. Epitaxial wafer growth: On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, 185, a buffer layer 600, a current spreading layer 201, a lower confinement layer 400, an active region 500, are sequentially epitaxially grown by a MOVCD system. Restricting layer 300, upper current spreading layer 200, thus obtaining an epitaxial wafer of AlGalnP light emitting diode, as shown in FIG. 5;
2. 器件的制备， 具体的工艺步骤是， 2. The preparation of the device, the specific process steps are,
a. 将生长好的外延片清洗并吹干后， 在上电流扩展层 200上光刻， 带胶进行湿 190 法或干法 （如： ICP) 刻蚀， 得到了所需要的图形化的电流扩展层 202; After cleaning and drying the grown epitaxial wafer, photolithography is performed on the upper current spreading layer 200, and the wet 190 method or the dry method (eg, ICP) etching is performed with the glue to obtain the required patterned current. Expansion layer 202;
b. 在图形化的电流扩展层 202 上面通过蒸发或溅射的办法镀上导电高反光层 140， 并与转移衬底 160通过导电键合层 150键合在一起； b. plating a conductive high light reflecting layer 140 on the patterned current spreading layer 202 by evaporation or sputtering, and bonding with the transfer substrate 160 through the conductive bonding layer 150;
c 通过腐蚀或剥离的办法， 将外延生长用的衬底 700和缓冲层 600去掉， 露出 电流扩展层 201 ; c removing the substrate 700 and the buffer layer 600 for epitaxial growth by etching or stripping to expose the current spreading layer 201;
195 d. 在电流扩展层 201 的上面光刻并带胶通过离子注入的办法得到电流阻挡层 195 d. Photolithography is performed on the current spreading layer 201 and the current is blocked by ion implantation.
110； 然后再蒸镀上一层导电增透出光层 130， 其材料可以是 ITO; 110; then vapor-deposited a layer of conductive anti-reflection layer 130, the material may be ITO;
e. 在导电增透出光层 130的上面蒸镀上一层金属， 如 AuGeNi, 并光刻出圆形 电极， 得到了上电极 100， 在转移衬底 160的下面也蒸镀上一层金属， 如 AuZnAu, 形成下电极 800， 完成了上下电极的制作； e. depositing a layer of metal, such as AuGeNi, on the conductive anti-reflecting light-emitting layer 130, and etching a circular electrode to obtain an upper electrode 100, and depositing a metal under the transfer substrate 160 , such as AuZnAu, forming the lower electrode 800, completing the fabrication of the upper and lower electrodes;
200 3. 解理与压悍： 划片、 解理， 得到了单个的管芯， 压焊在管座上并封装， 完 成了 LED的制作。 通过上、 下电极注入电流， 就可以实现高效、 高亮度的电流输 运增透窗口层和高反射图形转移衬底结构的 LED发光。 200 3. Cleavage and crushing: dicing and cleavage, a single die is obtained, which is pressure-welded on the stem and packaged to complete the fabrication of the LED. By injecting current through the upper and lower electrodes, it is possible to realize efficient, high-brightness current transmission of the antireflection window layer and the LED illumination of the highly reflective pattern transfer substrate structure.
实施例 4 Example 4
如图 9所示， 以 AlGalnP LED为例。 该器件由以下各部分组成， 上电极 100、 电 205 流阻挡层 110、 导电增透出光层 130、 电流扩展层 201、 上限制层 300、 有源区 500、 下限制层 400、 上电流扩展层 200、 导电高反光层 140、 导电键合层 150、 图形化的转 移衬底 161和下电极 800， 其制备过程和方法如下：
1. 外延片的生长： 在 GaAs等能够与 AlGalnP匹配的材料形成的衬底 700上， 利用 MOVCD***依次外延生长缓冲层 600， 电流扩展层 201， 下限制层 400， 有As shown in Fig. 9, the AlGalnP LED is taken as an example. The device is composed of the following parts, an upper electrode 100, an electric 205 flow blocking layer 110, a conductive anti-reflection layer 130, a current spreading layer 201, an upper confinement layer 300, an active region 500, a lower confinement layer 400, and an upper current extension. The layer 200, the conductive high light reflecting layer 140, the conductive bonding layer 150, the patterned transfer substrate 161 and the lower electrode 800 are prepared and processed as follows: 1. Growth of epitaxial wafer: On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer 400 are sequentially epitaxially grown by a MOVCD system.
210 源区 500， 上限制层 300， 上电流扩展层 200， 这样就得到了 AlGalnP发光二极管 的外延片， 图 5所示； 210 source region 500, upper confinement layer 300, upper current extension layer 200, thus obtaining an epitaxial wafer of AlGalnP LED, as shown in FIG. 5;
2. 器件的制备： 具体的工艺步骤是， 2. Preparation of the device: The specific process steps are:
a. 将普通衬底清洗并吹干后， 在上面光刻， 带胶进行湿法或干法 （如： ICP) 刻蚀， 得到了所需要的图形化的转移衬底 161 ; a. After cleaning and drying the ordinary substrate, photolithography is performed thereon, and wet or dry (eg, ICP) etching is performed with glue to obtain a desired patterned transfer substrate 161;
215 b. 在图形化的转移衬底 161 上面通过蒸发或溅射的办法镀上导电高反光层215 b. Conducting a highly reflective layer on top of the patterned transfer substrate 161 by evaporation or sputtering
140, 并与上电流扩展层 200通过导电键合层 150键合在一起； 140, and is bonded to the upper current spreading layer 200 through the conductive bonding layer 150;
c 通过腐蚀或剥离的办法， 将外延生长用的衬底 700和缓冲层 600去掉， 露出 电流扩展层 201 ; c removing the substrate 700 and the buffer layer 600 for epitaxial growth by etching or stripping to expose the current spreading layer 201;
d. 在电流扩展层 201 的上面光刻并带胶通过离子注入的办法得到电流阻挡层 220 110； 然后再蒸镀上一层导电增透出光层 130， 其材料可以是 ITO; d. lithography on the current expansion layer 201 and stripping through the ion implantation method to obtain a current blocking layer 220 110; and then vapor deposition of a layer of conductive anti-reflection layer 130, the material may be ITO;
e. 在导电增透出光层 130的上面蒸镀上一层金属， 如 AuGeNi, 并光刻出圆形 电极， 得到了上电极 100， 在图形化的转移衬底 161的下面也蒸镀上一层金属， 如 AuZnAu, 形成下电极 800， 完成了上下电极的制作； e. depositing a layer of metal, such as AuGeNi, on the conductive anti-reflecting light-emitting layer 130, and etching a circular electrode to obtain an upper electrode 100, which is also vapor-deposited under the patterned transfer substrate 161. A layer of metal, such as AuZnAu, forms the lower electrode 800, completing the fabrication of the upper and lower electrodes;
3. 解理与压焊： 划片、 解理， 得到了单个的管芯， 压焊在管座上并封装， 完 225 成了 LED的制作。 通过上、 下电极注入电流， 就可以实现高效、 高亮度的电流输 运增透窗口层和高反射图形转移衬底结构的 LED发光。 3. Cleavage and pressure welding: dicing, cleavage, a single die, pressure welding on the tube holder and packaging, finished 225 became the production of LED. By injecting current through the upper and lower electrodes, it is possible to realize efficient, high-brightness current transmission of the antireflection window layer and the LED illumination of the highly reflective pattern transfer substrate structure.
通过以上实施例， 完成了本发明的 LED制作。
Through the above embodiments, the LED fabrication of the present invention was completed.
Claims
权利要求书 Claim
1. 一种电流输运增透窗口层和高反射图形转移衬底结构的发光二极管， 从上往 下包括上电极 （100)、 上限制层 （300)、 有源区 （500)、 下限制层 （400) 和下电极 1. A current-transmitting antireflection window layer and a high-reflection pattern transfer substrate structure light-emitting diode, including an upper electrode (100), an upper confinement layer (300), an active region (500), and a lower limit from top to bottom Layer (400) and lower electrode
(800)， 其特征在于： 还包括设置在上电极（100)和上限制层（300)之间的电流输 运增透窗口层 （111 )， 电流输运增透窗口层 （111 ) 由导电增透出光层 （130)、 电流 阻挡层 （110) 和电流扩展层 （201 ) 共同构成； 还包括设置在下限制层 （400) 和下 电极（800)之间的支架 （112)， 支架（112) 从上往下的组成为： 图形化的电流扩展 层 （202)、 导电高反光层 （140)、 导电键合层 （150) 和转移衬底 （160)， 或为： 上 电流扩展层 （200)、 导电键合层 （150)、 导电高反光层 （140) 和图形化的转移衬底(800), characterized in that: further comprising a current transport antireflection window layer (111) disposed between the upper electrode (100) and the upper confinement layer (300), and the current transport antireflection window layer (111) is electrically conductive The anti-reflection layer (130), the current blocking layer (110) and the current spreading layer (201) are combined; further comprising a bracket (112) disposed between the lower confinement layer (400) and the lower electrode (800), the bracket ( 112) The composition from top to bottom is: a patterned current spreading layer (202), a conductive high reflective layer (140), a conductive bonding layer (150), and a transfer substrate (160), or: an upper current spreading layer (200), conductive bonding layer (150), conductive high reflective layer (140) and patterned transfer substrate
( 161 )。 ( 161 ).
2. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 在电流输运增透窗口层 （111 ) 的上面或里面还引入能 够对光能起到增透作用的结构。 2. The light-emitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure according to claim 1, wherein: on or in the current transport antireflection window layer (111) A structure capable of enhancing the penetration of light energy is introduced.
3. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 导电增透出光层 （130)所用的材料是既能导电又能对 光起到进行增透作用的材料。 3. The light-emitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure according to claim 1, wherein: the material used for the conductive antireflection layer (130) is electrically conductive. A material that can also enhance the penetration of light.
4. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 电流阻挡层 （110) 的材料是本征半导体或不导电树脂 或绝缘材料， 或导电特性与上电极相反的导电材料。 4. The light-emitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure according to claim 1, wherein: the material of the current blocking layer (110) is an intrinsic semiconductor or a non-conductive resin. Or an insulating material, or a conductive material having a conductive property opposite to that of the upper electrode.
5. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 电流阻挡层（110)做在电流扩展层（201 ) 的里面或上 面或下面。 5. The light-emitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure according to claim 1, wherein: the current blocking layer (110) is formed inside the current spreading layer (201). Or above or below.
6. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 有源区 （500) 结构为 p-n结， 或 p-i-n结， 或双异质结 构， 或单量子阱结构， 或多量子阱结构， 超晶格结构或量子点发光结构， 或多层量子 点结构， 或上述各种的组合结构。 6. The light-emitting diode of a current transporting antireflection window layer and a high reflection pattern transfer substrate structure according to claim 1, wherein: the active region (500) has a pn junction, or a pin junction, or A double heterostructure, or a single quantum well structure, or a multiple quantum well structure, a superlattice structure or a quantum dot light emitting structure, or a multilayer quantum dot structure, or a combination of the above various structures.
7. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 导电高反光层（140) 由既能导电又能反光的材料组成。 7. The light-emitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure according to claim 1, wherein: the conductive high light reflecting layer (140) is made of a material that is both electrically conductive and reflective. composition.
8. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构
的发光二极管， 其特征在于： 导电键合层 （150) 由既能导电又能起到键合作用的材 料组成。 8. A current transport antireflection window layer and a high reflection pattern transfer substrate structure according to claim The light emitting diode is characterized in that: the conductive bonding layer (150) is composed of a material which is both electrically conductive and capable of bonding.
9. 根据权利要求 1所述的一种电流输运增透窗口层和高反射图形转移衬底结构 的发光二极管， 其特征在于： 转移衬底 （160)或图形化的转移衬底（161 )是金属或 半导体热导材料。 9. The light-emitting diode of a current transport antireflection window layer and a high reflection pattern transfer substrate structure according to claim 1, wherein: a transfer substrate (160) or a patterned transfer substrate (161) It is a metal or semiconductor thermal conductive material.
10. 根据权利要求 1 所述的一种电流输运增透窗口层和高反射图形转移衬底 结构的发光二极管，其特征在于图形化的电流扩展层 (202)或图形化的转移衬底（ 161 ) 的结构是平面或凹凸不平的规则的或不规则的表面。
10. The light-emitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure according to claim 1, characterized by a patterned current spreading layer (202) or a patterned transfer substrate ( The structure of 161) is a regular or irregular surface that is flat or rugged.
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| CN101714599B (en) * | 2008-09-24 | 2012-01-18 | 丰田合成株式会社 | Group iii nitride semiconductor light-emitting device and method for producing the same |
| EP2445017A3 (en) * | 2010-10-19 | 2015-04-22 | Samsung Electronics Co., Ltd. | Vertical light-emitting semiconductor device |
| EP2466654A3 (en) * | 2010-12-20 | 2014-01-01 | LG Innotek Co., Ltd. | Light emitting device and method for fabricating the same |
| US8916883B2 (en) | 2010-12-20 | 2014-12-23 | Lg Innotek Co., Ltd. | Light emitting device and method for fabricating the same |
| CN104269478A (en) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | LED substrate structure and manufacturing method of LED substrate structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101009353B (en) | 2010-07-21 |
| CN101009353A (en) | 2007-08-01 |
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