CN1758493A - Light-emitting component with micro-reflection structure layer - Google Patents
Light-emitting component with micro-reflection structure layer Download PDFInfo
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- CN1758493A CN1758493A CNA2004100852614A CN200410085261A CN1758493A CN 1758493 A CN1758493 A CN 1758493A CN A2004100852614 A CNA2004100852614 A CN A2004100852614A CN 200410085261 A CN200410085261 A CN 200410085261A CN 1758493 A CN1758493 A CN 1758493A
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Abstract
A luminous component with a micro-reflection structure layer derives the light emitted to said reflection structure layer by the emit layer to increase the radiation efficiency of the light emit component.
Description
Technical field
The present invention relates to a kind of luminescence component, especially relate to a kind of luminescence component with micro-reflection structure layer.
The application of luminescence component is rather extensive, for example, can be applicable to optical display, laser diode, traffic signals, information accumulation device, communication device, lighting device and medical treatment device.In this technology, how one of technical staff's important topic is for improving the luminous efficiency of luminescence component at present.
Background technology
In No. the 2002/0017652nd, U.S. Patent Publication, disclose a kind of embedded micro-reflection structure AlGaInP luminescence component that has, as shown in Figure 1, it utilizes etching technique, the epitaxial loayer of luminescence component is etched into micro-reflection structure, this micro-reflection structure comprises semicircle sphere, pyramid or pyramid etc., then the long-pending metallic reflector in Shen is on this epitaxial loayer, again together with the top of micro-reflection structure epitaxial loayer and conductive carrier (silicon) bond, remove the opaque substrate of original epitaxial loayer again, make the light of this opaque substrate of directive to penetrate.This micro-reflection structure can be taken the light of directive catoptric arrangement out of via reflection, to improve the brightness of luminescence component.Because this luminescence component only depends on the top of catoptric arrangement to engage with this carrier part, contact area is less, and the mechanical strength of this structure is strong inadequately, easily causes the composition surface to peel off.
In addition, epitaxial loayer is carried out etching form this micro-reflection structure, so this epitaxial loayer must grow to enough thickness, otherwise the micro-reflection structure that etching forms can't be reached the light function of reflecting, but thick epitaxial layer is grown up and need be spent the long time, not only consuming time, cost also improves relatively.
Summary of the invention
When how this case inventor solves aforesaid problem in thinking, think if utilize a kind of luminescence component with micro-reflection structure layer, this luminescence component has micro-reflection structure layer, this micro-reflection structure layer is to utilize technology such as die casting, etching or evaporation, form a metal micro-reflection structure layer, utilize clear adhesive again micro-reflection structure layer and luminous laminated bonding together.Because the present invention does not need as the thick epitaxial loayer step such as this epitaxial loayer of etching again of growing up in the known technology, therefore can reach and reduce cost, promote the purpose of brightness.Moreover the present invention with clear adhesive with micro-reflection structure layer and luminous laminated surface adhesion together, rather than known technology only depends on the top of reflector to engage with the carrier part as described above, therefore more can solve the strong inadequately shortcoming of mechanical strength of structure.
Main purpose of the present invention is to provide a kind of luminescence component with micro-reflection structure layer, this luminescence component has micro-reflection structure layer, the formation method of this micro-reflection structure layer for example is to utilize die-casting technique, with the master mold with predetermined pattern metallic reflector is cast into micro-reflection structure layer, wherein the external form of this micro-reflection structure layer comprises geometrical patterns such as semicircle sphere, pyramid or pyramid; Then utilize clear adhesive with this micro-reflection structure layer and luminous laminated bonding together again; Wherein do not need the extension program of carrying out consuming time, only need carry out the die casting program to metal level, form this particular geometric pattern, therefore can reach to reduce cost, and promote the purpose of brightness.
Another object of the present invention is to provide a kind of luminescence component with micro-reflection structure layer, its utilize this clear adhesive can with the characteristic of luminous laminated each face fluid-tight engagement, make micro-reflection structure layer, clear adhesive and luminous laminated between bond strength increase, so can promote its mechanical strength, avoid the composition surface to peel off, simplify processing procedure, increase reliability.
According to a kind of luminescence component of preferred embodiment of the present invention with micro-reflection structure layer, comprise substrate, be formed at the micro-reflection structure layer on this substrate, be formed at first conversion zone on this micro-reflection structure layer, be formed at the transparent bonding layer on this first conversion zone, be formed at second conversion zone on this transparent bonding layer, be formed at the transparency conducting layer on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises first surface zone and second surface zone, be formed at first contact layer on this first surface zone, be formed at first bond course on this first contact layer, be formed at the luminescent layer on this first bond course, be formed at second bond course on this luminescent layer, be formed at second contact layer on this second bond course, be formed at first link electrode on this second surface zone, and be formed at second link electrode on this second contact layer.
Aforesaid substrate is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, Si, SiC, glass, BN, AlN or the Ge institute constituent material cohort; Aforesaid transparent conductive oxide layer is to comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort; Aforesaid micro-reflection structure series of strata comprise at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, Cr, PbSn, AuZn or the tin indium oxide institute constituent material cohort; The external form of aforesaid micro-reflection structure comprises geometrical patterns such as being selected from semicircle sphere, pyramid or pyramid and constitutes at least a shape in the shape; Aforementioned first bond course is to comprise at least a material that is selected from AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort; Aforementioned light emission layer is to comprise at least a material that is selected from AlGaInP, GaN, InGaN and the AlInGaN institute constituent material cohort; Aforementioned second bond course is to comprise at least a material that is selected from AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort; Aforementioned second contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort; Aforementioned first contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort; Aforementioned transparent bonding series of strata comprise at least a material that is selected from polyimides (PI), benzocyclobutane (BCB) or Freon C318 (PFCB) the institute constituent material cohort; The aforementioned first reaction series of strata comprise at least a material that is selected from SiNx, Ti or the Cr institute constituent material cohort; The aforementioned second reaction series of strata comprise at least a material that is selected from SiNx, Ti or the Cr institute constituent material cohort.
Description of drawings:
Fig. 1 shows the embedded micro-reflector AlGaInP luminescence component of a known technology;
Fig. 2 shows a kind of luminescence component with micro-reflection structure layer according to a preferred embodiment of the present invention;
Fig. 3 shows a kind of luminescence component with micro-reflection structure layer according to another preferred embodiment of the present invention;
Fig. 4 shows a kind of luminescence component with micro-reflection structure layer according to the another preferred embodiment of the present invention.
Symbol description
1 luminescence component
10 substrates
11 micro-reflection structure layers
100 first conversion zones
101 transparent bonding layers
102 second conversion zones
12 transparency conducting layers
13 first contact layers
14 first bond courses
15 luminescent layers
16 second bond courses
17 second contact layers
18 first link electrodes
19 second link electrodes
2 luminescence components
20 substrates
21 micro-reflection structure layers
200 first conversion zones
201 transparent bonding layers
202 second conversion zones
203 transparent carriers
22 transparency conducting layers
23 first contact layers
24 first bond courses
25 luminescent layers
26 second bond courses
27 second contact layers
28 first link electrodes
29 second link electrodes
3 luminescence components
30 electrically-conductive backing plates
31 micro-reflection structure layers
300 first conversion zones
301 electrically conducting transparent tack coats
302 second conversion zones
32 transparency conducting layers
33 first contact layers
34 first bond courses
35 luminescent layers
36 second bond courses
37 second contact layers
38 first link electrodes
39 second link electrodes
Embodiment
See also Fig. 2, according to a kind of luminescence component 1 of preferred embodiment of the present invention with micro-reflection structure layer, comprise substrate 10, be formed at the micro-reflection structure layer 11 on this substrate 10, this micro-reflection structure layer is to utilize die-casting technique, with master mold metallic reflector is cast into micro-reflection structure layer with predetermined pattern, wherein the predetermined pattern of this master mold comprises the semicircle sphere of projection, geometrical pattern such as pyramid or pyramid or its combination pattern, and the method for making of master mold is for plating one deck macromolecular material on carrier, polyimides for example, then with etching technique this floor height molecular material tentatively is etched into aforementioned predetermined pattern again, also can after etching, carry out heating schedule again, pattern after etching finished is rectangle for example, becomes the semicircle sphere of projection behind overheated melting.And this micro-reflection structure layer just becomes the geometrical patterns such as semicircle sphere, pyramid or pyramid of depression through the external form after the die casting; Then on this micro-reflection structure layer, form first conversion zone 100 again, be formed at the transparent bonding layer 101 on this first conversion zone, be formed at second conversion zone 102 on this transparent bonding layer 101, be formed at the transparency conducting layer 12 on this second conversion zone 102, wherein, the upper surface of this transparency conducting layer 12 comprises first surface zone and second surface zone, be formed at first contact layer 13 on this first surface zone, be formed at first bond course 14 on this first contact layer, be formed at the luminescent layer 15 on this first bond course, be formed at second bond course 16 on this luminescent layer, be formed at second contact layer 17 on this second bond course, be formed at first link electrode 18 on this second surface zone, and be formed at second link electrode 19 on this second contact layer.The purpose of aforesaid first conversion zone and second conversion zone is the adhesion between auxiliary this clear adhesive and micro-reflection structure layer or the transparency conducting layer.
See also Fig. 3, according to a kind of luminescence component 2 of another preferred embodiment of the present invention with micro-reflection structure layer, comprise substrate 20, be formed at the micro-reflection structure layer 21 on this substrate 20, the formation method of this micro-reflection structure layer is similar to the formation method of micro-reflection structure layer 11, be formed at first conversion zone 200 on this micro-reflection structure layer 21, be formed at the transparent bonding layer 201 on this first conversion zone 200, be formed at second conversion zone 202 on this transparent bonding layer 201, be formed at the transparent carrier 203 on this second conversion zone 202, be formed at the transparency conducting layer 22 on this transparent carrier 203, wherein, the upper surface of this transparency conducting layer 22 comprises first surface zone and second surface zone, be formed at first contact layer 23 on this first surface zone, be formed at first bond course 24 on this first contact layer 23, be formed at the luminescent layer 25 on this first bond course 24, be formed at second bond course 26 on this luminescent layer 25, be formed at second contact layer 27 on this second bond course, be formed at first link electrode 28 on this second surface zone, and be formed at second link electrode 29 on this second contact layer.The purpose of aforesaid first conversion zone and second conversion zone is the adhesion between auxiliary this clear adhesive and the reflector or second carrier.
See also Fig. 4, according to a kind of luminescence component 3 of another preferred embodiment of the present invention with micro-reflection structure layer, comprise electrically-conductive backing plate 30, be formed at the micro-reflection structure layer 31 on these electrically-conductive backing plate 30 upper surfaces, the formation method of this micro-reflection structure layer is similar to the formation method of micro-reflection structure layer 11, be formed at first conversion zone 300 on this micro-reflection structure layer 31, be formed at the electrically conducting transparent tack coat 301 on this first conversion zone 300, be formed at second conversion zone 302 on this electrically conducting transparent tack coat 301, be formed at the transparency conducting layer 32 on this second conversion zone 302, be formed at first contact layer 33 on this transparency conducting layer 32, be formed at first bond course 34 on this first contact layer 33, be formed at the luminescent layer 35 on this first bond course 34, be formed at second bond course 36 on this luminescent layer 35, be formed at second contact layer 37 on this second bond course 36, be formed at first link electrode 38 on this electrically-conductive backing plate lower surface, and be formed at second link electrode 39 on this second contact layer 37.
Aforesaid electrically conducting transparent adhesive linkage has the function of conduction; The purpose of aforesaid first conversion zone and second conversion zone is the adhesion between auxiliary this electrically conducting transparent adhesive linkage and micro-reflection structure layer or the transparency conducting layer, makes its composition surface form nurse contact difficult to understand simultaneously.
Among aforesaid three embodiment, also can between second link electrode and second contact layer, form transparency conducting layer; Among aforesaid three embodiment, the formation method of master mold can also metal substrate, after laser processing, form this protruding geometrical pattern or its combination pattern such as semicircle sphere, pyramid or pyramid, other in foundry engieering the formation method of master mold, also can be used to make the master mold of this micro-reflection structure; The formation method of aforementioned micro-reflection structure layer except pressure casting method, can also etching or etching after again method such as evaporation form; Aforesaid base plate is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, Si, SiC, glass, BN, AlN or the Ge institute constituent material cohort; Aforementioned electrically-conductive backing plate is to comprise at least a material or other the replaceable material that is selected from Si, GaAs, SiC, GaP, GaAsP, InGaP, AlGaInP, AlGaAs, BN or the AlN institute constituent material cohort; Aforementioned transparent carrier is to comprise to be selected from GaP, SiC, Al
2O
3Or at least a material in the glass institute constituent material cohort; Aforementioned micro-reflection structure layer is to comprise at least a material or other the replaceable material that is selected from Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn or the tin indium oxide institute constituent material cohort; Aforesaid micro-reflection structure comprises and is selected from semicircle sphere, pyramid or pyramid and constitutes at least a shape in the shape; Aforesaid transparency conducting layer is to comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort; Aforementioned first bond course is to comprise at least a material that is selected from AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort; Aforementioned light emission layer is to comprise at least a material that is selected from AlGaInP, GaN, InGaN and the AlInGaN institute constituent material cohort; Aforementioned second bond course is to comprise at least a material that is selected from AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort; Aforementioned second contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort; Aforementioned first contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort; Aforementioned transparent bonding series of strata comprise at least a material that is selected from polyimides (PI), benzocyclobutane (BCB) or Freon C318 (PFCB) the institute constituent material cohort; The aforementioned first reaction series of strata comprise at least a material that is selected from SiNx, Ti or the Cr institute constituent material cohort; The aforementioned second reaction series of strata comprise at least a material that is selected from SiNx, Ti or the Cr institute constituent material cohort; Aforesaid electrically conducting transparent tack coat comprises and is selected from least a material in the conductive doped material institute constituent material cohort in spontaneous conducting polymer (Intrinsically conducting polymer) or the macromolecule; Aforesaid conductive material comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide, zinc-tin oxide, Au and the Ni/Au institute constituent material cohort.
Though luminescence component of the present invention is exposed in preferred embodiment, right scope of the present invention is not limited to above-mentioned preferred embodiment, the pressure casting method that discloses except the present invention of the formation method of micro-reflection structure layer for example, can also etching or etching after again method such as evaporation form this micro-reflection structure; Therefore should be defined with described claim and be as the criterion.Therefore anyly know this operator, do not breaking away under claim of the present invention and the spirit, when making any change.
Claims (25)
1. luminescence component with micro-reflection structure layer comprises:
Substrate;
Micro-reflection structure layer, be formed at this substrate on;
Clear adhesive, be formed at this micro-reflection structure layer on; And
Luminous laminated, be formed at this clear adhesive on.
2. the luminescence component with micro-reflection structure layer as claimed in claim 1 wherein further comprises first conversion zone between this reflector and this clear adhesive.
3. the luminescence component with micro-reflection structure layer as claimed in claim 1 wherein further comprises second conversion zone in this clear adhesive and this are luminous between laminated.
4. the luminescence component with micro-reflection structure layer as claimed in claim 1 is wherein in this luminous laminated same positive first electrode and second electrode of forming.
5. the luminescence component with micro-reflection structure layer as claimed in claim 1 wherein forms first electrode and second electrode respectively at this luminous laminated front and substrate reverse side.
6. luminescence component with micro-reflection structure layer comprises:
Substrate;
Be formed at the micro-reflection structure layer on this substrate;
Be formed at first conversion zone on this micro-reflection structure layer;
Be formed at the transparent bonding layer on this first conversion zone;
Be formed at second conversion zone on this transparent bonding layer;
Be formed at the transparency conducting layer on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises first surface zone and second surface zone;
Be formed at first contact layer on this first surface zone;
Be formed at first bond course on this first contact layer;
Be formed at the luminescent layer on this first bond course;
Be formed at second bond course on this luminescent layer;
Be formed at second contact layer on this second bond course;
Be formed at first link electrode on this second surface zone; And
Be formed at second link electrode on this second contact layer.
7. luminescence component with micro-reflection structure layer comprises:
Substrate;
Be formed at the micro-reflection structure layer on this substrate;
Be formed at first conversion zone on this micro-reflection structure layer;
Be formed at the transparent bonding layer on this first conversion zone;
Be formed at second conversion zone on this transparent bonding layer;
Be formed at the transparent carrier on this second conversion zone;
Be formed at the transparency conducting layer on this transparent carrier, wherein, the upper surface of this transparency conducting layer comprises first surface zone and second surface zone;
Be formed at first contact layer on this first surface zone;
Be formed at first bond course on this first contact layer;
Be formed at the luminescent layer on this first bond course;
Be formed at second bond course on this luminescent layer;
Be formed at second contact layer on this second bond course;
Be formed at first link electrode on this second surface zone; And
Be formed at second link electrode on this second contact layer.
8. luminescence component with micro-reflection structure layer comprises:
Electrically-conductive backing plate;
Be formed at the micro-reflection structure layer on this electrically-conductive backing plate;
Be formed at first conversion zone on this micro-reflection structure layer;
Be formed at the electrically conducting transparent tack coat on this first conversion zone;
Be formed at second conversion zone on this electrically conducting transparent tack coat;
Be formed at the transparency conducting layer on this second conversion zone;
Be formed at first contact layer on this transparency conducting layer;
Be formed at first bond course on this first contact layer;
Be formed at the luminescent layer on this first bond course;
Be formed at second bond course on this luminescent layer;
Be formed at second contact layer on this second bond course;
Be formed at first link electrode on this electrically-conductive backing plate lower surface; And
Be formed at second link electrode on this second contact layer.
9. as claim 1,6,7 or 8 described luminescence components with micro-reflection structure layer, this micro-reflection structure shape wherein is to comprise to be selected from semicircle sphere, pyramid or pyramid and to constitute at least a shape or other alternative shape in the shape.
10. as claim 1,6 or 7 described luminescence components with micro-reflection structure layer, wherein this substrate is to comprise at least a material or other the alternative material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, Si, SiC, glass, BN, AlN or the Ge institute constituent material cohort.
11. the luminescence component with micro-reflection structure layer as claimed in claim 8, wherein this electrically-conductive backing plate is to comprise at least a material or other the replaceable material that is selected from Si, GaAs, SiC, GaP, GaAsP, InGaP, AlGaInP, AlGaAs, BN or the AlN institute constituent material cohort.
12. the luminescence component with micro-reflection structure layer as claimed in claim 7, wherein this transparent carrier is to comprise to be selected from GaP, SiC, Al
2O
3Or at least a material in the glass institute constituent material cohort or other replaceable material.
13. as claim 1,6,7 or 8 described luminescence components with micro-reflection structure layer, wherein this micro-reflection structure layer is to comprise at least a material or other the replaceable material that is selected from Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn or the tin indium oxide institute constituent material cohort.
14. as claim 1,6 or 7 described luminescence components with micro-reflection structure layer, wherein these transparent bonding series of strata comprise at least a material or other the replaceable material that is selected from polyimides, benzocyclobutane or the Freon C318 institute constituent material cohort.
15. as claim 2,6,7 or 8 described luminescence components with micro-reflection structure layer, wherein these first reaction series of strata comprise at least a material or other the alternative material that is selected from SiNx, Ti or the Cr institute constituent material cohort.
16. as claim 3,6,7 or 8 described luminescence components with micro-reflection structure layer, wherein these second reaction series of strata comprise at least a material or other the alternative material that is selected from SiNx, Ti or the Cr institute constituent material cohort.
17. the luminescence component with micro-reflection structure layer as claimed in claim 8, wherein this electrically conducting transparent tack coat comprises and is selected from least a material or other the replaceable material in the conductive doped material institute constituent material cohort in spontaneous conducting polymer or the macromolecule.
18. the luminescence component with micro-reflection structure layer as claimed in claim 17, wherein this conductive material comprises at least a material or other the alternative material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide, zinc-tin oxide, Au and the Ni/Au institute constituent material cohort.
19. as claim 6,7 or 8 described luminescence components with micro-reflection structure layer, wherein this first bond course is to comprise at least a material or other the alternative material that is selected from AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.
20. as claim 6,7 or 8 described luminescence components with micro-reflection structure layer, wherein this luminescent layer is to comprise at least a material or other the alternative material that is selected from AlGaInP, GaN, InGaN and the AlInGaN institute constituent material cohort.
21. as claim 6,7 or 8 described luminescence components with micro-reflection structure layer, wherein this second bond course is to comprise at least a material or other the alternative material that is selected from AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.
22. as claim 6,7 or 8 described luminescence components with micro-reflection structure layer, wherein these first contact series of strata comprise at least a material or other the alternative material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
23. as claim 6,7 or 8 described luminescence components with micro-reflection structure layer, wherein this second contact layer is to comprise at least a material or other the alternative material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
24., between this second link electrode and this second contact layer, form transparency conducting layer as claim 6,7 or 8 described luminescence components with micro-reflection structure layer.
25. as claim 6,7,8 or 24 described luminescence components with micro-reflection structure layer, wherein this transparency conducting layer is to comprise at least a material or other the replaceable material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide or the zinc-tin oxide institute constituent material cohort.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2004100852614A CN1758493A (en) | 2004-10-08 | 2004-10-08 | Light-emitting component with micro-reflection structure layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008092378A1 (en) * | 2007-01-26 | 2008-08-07 | Beijing University Of Technology | A light emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008092378A1 (en) * | 2007-01-26 | 2008-08-07 | Beijing University Of Technology | A light emitting diode |
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