WO2008090669A1 - パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 - Google Patents

パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 Download PDF

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Publication number
WO2008090669A1
WO2008090669A1 PCT/JP2007/072364 JP2007072364W WO2008090669A1 WO 2008090669 A1 WO2008090669 A1 WO 2008090669A1 JP 2007072364 W JP2007072364 W JP 2007072364W WO 2008090669 A1 WO2008090669 A1 WO 2008090669A1
Authority
WO
WIPO (PCT)
Prior art keywords
fining
pattern
forming agent
coating forming
formation
Prior art date
Application number
PCT/JP2007/072364
Other languages
English (en)
French (fr)
Inventor
Kiyoshi Ishikawa
Atsushi Sawano
Kazumasa Wakiya
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Priority to KR1020097014248A priority Critical patent/KR101148342B1/ko
Priority to US12/449,024 priority patent/US20100090372A1/en
Publication of WO2008090669A1 publication Critical patent/WO2008090669A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　微細化処理後にディフェクトが発生することなく、特に１２０ｎｍ以下の超微細化、高アスペクト比化したレジストパターンの微細化処理においても微細化量の変動を抑制、管理可能であり、所望とする微細化量を維持しながら、微細化処理後のレジストパターン形状を良好に維持することができ、さらには、パターン微細化用被覆形成剤を塗布した後のウェーハ面内においてバクテリア等の発生による不具合も解消することが可能なパターン微細化用被覆形成剤及びこれを用いた微細パターン形成方法を提供する。 　本発明のパターン微細化用被覆形成剤は、ホトレジストパターンを有する基板上に被覆され微細パターンを形成するために使用される被覆形成剤であって、（ａ）水溶性ポリマーと、（ｂ）第４級アンモニウム水酸化物、脂環式アンモニウム水酸化物、及びモルホリニウム水酸化物の中から選ばれる少なくとも１種とを含有することを特徴とする。
PCT/JP2007/072364 2007-01-23 2007-11-19 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 WO2008090669A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097014248A KR101148342B1 (ko) 2007-01-23 2007-11-19 패턴 미세화용 피복 형성제 및 그것을 이용한 미세 패턴 형성 방법
US12/449,024 US20100090372A1 (en) 2007-01-23 2007-11-19 Coating formation agent for pattern micro-fabrication, and micropattern formation method using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007013101A JP5270840B2 (ja) 2007-01-23 2007-01-23 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP2007-013101 2007-01-23

Publications (1)

Publication Number Publication Date
WO2008090669A1 true WO2008090669A1 (ja) 2008-07-31

Family

ID=39644247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072364 WO2008090669A1 (ja) 2007-01-23 2007-11-19 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法

Country Status (4)

Country Link
US (1) US20100090372A1 (ja)
JP (1) JP5270840B2 (ja)
KR (1) KR101148342B1 (ja)
WO (1) WO2008090669A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015187633A (ja) * 2014-03-26 2015-10-29 東京応化工業株式会社 パターン微細化用被覆剤

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5138916B2 (ja) * 2006-09-28 2013-02-06 東京応化工業株式会社 パターン形成方法
KR101618316B1 (ko) * 2009-02-27 2016-05-09 주식회사 동진쎄미켐 포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법
CN101963754B (zh) * 2009-06-26 2012-12-19 罗门哈斯电子材料有限公司 形成电子器件的方法
EP2336824A1 (en) * 2009-11-19 2011-06-22 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
WO2014111292A1 (en) 2013-01-18 2014-07-24 Basf Se Acrylic dispersion-based coating compositions
JP6180212B2 (ja) * 2013-07-12 2017-08-16 東京応化工業株式会社 パターン微細化用被覆剤
US10613435B2 (en) 2015-03-31 2020-04-07 Nissan Chemical Industries, Ltd. Coating solution for resist pattern coating and method for forming pattern
JP6491758B1 (ja) * 2017-06-01 2019-03-27 三菱電機株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004077951A (ja) * 2002-08-21 2004-03-11 Fujitsu Ltd レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
JP2004133192A (ja) * 2002-10-10 2004-04-30 Tokyo Ohka Kogyo Co Ltd 微細パターンの形成方法
JP2007057967A (ja) * 2005-08-25 2007-03-08 Fujitsu Ltd レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299202A (ja) * 2001-03-29 2002-10-11 Sony Corp 半導体装置の製造方法
JP3476081B2 (ja) * 2001-12-27 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
KR101076623B1 (ko) * 2003-07-17 2011-10-27 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004077951A (ja) * 2002-08-21 2004-03-11 Fujitsu Ltd レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
JP2004133192A (ja) * 2002-10-10 2004-04-30 Tokyo Ohka Kogyo Co Ltd 微細パターンの形成方法
JP2007057967A (ja) * 2005-08-25 2007-03-08 Fujitsu Ltd レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015187633A (ja) * 2014-03-26 2015-10-29 東京応化工業株式会社 パターン微細化用被覆剤

Also Published As

Publication number Publication date
JP2008180813A (ja) 2008-08-07
US20100090372A1 (en) 2010-04-15
JP5270840B2 (ja) 2013-08-21
KR20090091324A (ko) 2009-08-27
KR101148342B1 (ko) 2012-05-25

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