WO2008090669A1 - パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 - Google Patents
パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 Download PDFInfo
- Publication number
- WO2008090669A1 WO2008090669A1 PCT/JP2007/072364 JP2007072364W WO2008090669A1 WO 2008090669 A1 WO2008090669 A1 WO 2008090669A1 JP 2007072364 W JP2007072364 W JP 2007072364W WO 2008090669 A1 WO2008090669 A1 WO 2008090669A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fining
- pattern
- forming agent
- coating forming
- formation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097014248A KR101148342B1 (ko) | 2007-01-23 | 2007-11-19 | 패턴 미세화용 피복 형성제 및 그것을 이용한 미세 패턴 형성 방법 |
US12/449,024 US20100090372A1 (en) | 2007-01-23 | 2007-11-19 | Coating formation agent for pattern micro-fabrication, and micropattern formation method using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007013101A JP5270840B2 (ja) | 2007-01-23 | 2007-01-23 | パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 |
JP2007-013101 | 2007-01-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008090669A1 true WO2008090669A1 (ja) | 2008-07-31 |
Family
ID=39644247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/072364 WO2008090669A1 (ja) | 2007-01-23 | 2007-11-19 | パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100090372A1 (ja) |
JP (1) | JP5270840B2 (ja) |
KR (1) | KR101148342B1 (ja) |
WO (1) | WO2008090669A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015187633A (ja) * | 2014-03-26 | 2015-10-29 | 東京応化工業株式会社 | パターン微細化用被覆剤 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5138916B2 (ja) * | 2006-09-28 | 2013-02-06 | 東京応化工業株式会社 | パターン形成方法 |
KR101618316B1 (ko) * | 2009-02-27 | 2016-05-09 | 주식회사 동진쎄미켐 | 포토레지스트 패턴 코팅용 고분자 및 이를 이용한 반도체 소자의 패턴 형성 방법 |
CN101963754B (zh) * | 2009-06-26 | 2012-12-19 | 罗门哈斯电子材料有限公司 | 形成电子器件的方法 |
EP2336824A1 (en) * | 2009-11-19 | 2011-06-22 | Rohm and Haas Electronic Materials, L.L.C. | Methods of forming electronic devices |
WO2014111292A1 (en) | 2013-01-18 | 2014-07-24 | Basf Se | Acrylic dispersion-based coating compositions |
JP6180212B2 (ja) * | 2013-07-12 | 2017-08-16 | 東京応化工業株式会社 | パターン微細化用被覆剤 |
US10613435B2 (en) | 2015-03-31 | 2020-04-07 | Nissan Chemical Industries, Ltd. | Coating solution for resist pattern coating and method for forming pattern |
JP6491758B1 (ja) * | 2017-06-01 | 2019-03-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004077951A (ja) * | 2002-08-21 | 2004-03-11 | Fujitsu Ltd | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
JP2004133192A (ja) * | 2002-10-10 | 2004-04-30 | Tokyo Ohka Kogyo Co Ltd | 微細パターンの形成方法 |
JP2007057967A (ja) * | 2005-08-25 | 2007-03-08 | Fujitsu Ltd | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299202A (ja) * | 2001-03-29 | 2002-10-11 | Sony Corp | 半導体装置の製造方法 |
JP3476081B2 (ja) * | 2001-12-27 | 2003-12-10 | 東京応化工業株式会社 | パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法 |
KR101076623B1 (ko) * | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
JP5000260B2 (ja) * | 2006-10-19 | 2012-08-15 | AzエレクトロニックマテリアルズIp株式会社 | 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 |
-
2007
- 2007-01-23 JP JP2007013101A patent/JP5270840B2/ja not_active Expired - Fee Related
- 2007-11-19 WO PCT/JP2007/072364 patent/WO2008090669A1/ja active Application Filing
- 2007-11-19 KR KR1020097014248A patent/KR101148342B1/ko active IP Right Grant
- 2007-11-19 US US12/449,024 patent/US20100090372A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004077951A (ja) * | 2002-08-21 | 2004-03-11 | Fujitsu Ltd | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
JP2004133192A (ja) * | 2002-10-10 | 2004-04-30 | Tokyo Ohka Kogyo Co Ltd | 微細パターンの形成方法 |
JP2007057967A (ja) * | 2005-08-25 | 2007-03-08 | Fujitsu Ltd | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015187633A (ja) * | 2014-03-26 | 2015-10-29 | 東京応化工業株式会社 | パターン微細化用被覆剤 |
Also Published As
Publication number | Publication date |
---|---|
JP2008180813A (ja) | 2008-08-07 |
US20100090372A1 (en) | 2010-04-15 |
JP5270840B2 (ja) | 2013-08-21 |
KR20090091324A (ko) | 2009-08-27 |
KR101148342B1 (ko) | 2012-05-25 |
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