WO2008078595A1 - 面発光レーザ - Google Patents

面発光レーザ Download PDF

Info

Publication number
WO2008078595A1
WO2008078595A1 PCT/JP2007/074275 JP2007074275W WO2008078595A1 WO 2008078595 A1 WO2008078595 A1 WO 2008078595A1 JP 2007074275 W JP2007074275 W JP 2007074275W WO 2008078595 A1 WO2008078595 A1 WO 2008078595A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
reflecting mirror
bragg reflecting
resonator unit
multilayer bragg
Prior art date
Application number
PCT/JP2007/074275
Other languages
English (en)
French (fr)
Inventor
Takayoshi Anan
Naofumi Suzuki
Kenichiro Yashiki
Masayoshi Tsuji
Hiroshi Hatakeyama
Kimiyoshi Fukatsu
Takeshi Akagawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2008551040A priority Critical patent/JP5212113B2/ja
Publication of WO2008078595A1 publication Critical patent/WO2008078595A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　本発明の面発光レーザは、第１の層１１３および第１の層１１３よりも高屈折率の第１の高屈折率層を含む第１の多層膜ブラッグ反射鏡１１と、第２の層１３１および第２の層１３１よりも高屈折率の第２の高屈折率層を含む第２の多層膜ブラッグ反射鏡１３と、これらの多層膜ブラッグ反射鏡に挟まれ、活性層部を含む光共振器部１２とを有する。そして、第１の多層膜ブラッグ反射鏡１１について光共振器部１２に接している層が第１の層１１３であり、第２の多層膜ブラッグ反射鏡１３について光共振器部１２に接している層が第２の層１３１である。共振器部１２の実効的な屈折率ｎeffが第１および第２の層１１３、１３１よりも大きく、かつ、光共振器部１２の光路長ｎeffＬが面発光レーザの発振波長λと０．５λ＜ｎeffＬ≦０．７λの関係にある。さらに、光共振器部１２と第１の多層膜ブラッグ反射鏡１１または第２の多層膜ブラッグ反射鏡１３との境界からΔＬ（＝ｎeffＬ－０．５λ）離れた位置に活性層部１２１が設けられている。
PCT/JP2007/074275 2006-12-27 2007-12-18 面発光レーザ WO2008078595A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008551040A JP5212113B2 (ja) 2006-12-27 2007-12-18 面発光レーザ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-352535 2006-12-27
JP2006352535 2006-12-27

Publications (1)

Publication Number Publication Date
WO2008078595A1 true WO2008078595A1 (ja) 2008-07-03

Family

ID=39562388

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074275 WO2008078595A1 (ja) 2006-12-27 2007-12-18 面発光レーザ

Country Status (2)

Country Link
JP (1) JP5212113B2 (ja)
WO (1) WO2008078595A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080571A (ja) * 2008-09-25 2010-04-08 Nec Corp 面発光レーザ及びその製造方法
US9466945B2 (en) 2014-10-03 2016-10-11 Fuji Xerox Co., Ltd. Surface-emitting semiconductor laser device and method for producing the same
JP2020021883A (ja) * 2018-08-02 2020-02-06 株式会社リコー 発光素子及びその製造方法
JP2021036553A (ja) * 2019-08-30 2021-03-04 学校法人 名城大学 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167484A (ja) * 1990-10-31 1992-06-15 Toshiba Corp 光半導体装置
JP2000174329A (ja) * 1998-12-03 2000-06-23 Oki Electric Ind Co Ltd 垂直微小共振器型発光ダイオード
JP2002204027A (ja) * 1992-10-15 2002-07-19 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2002353568A (ja) * 2001-05-28 2002-12-06 Hitachi Ltd 半導体レーザとそれを用いた光モジュール及び光通信システム
JP2005039102A (ja) * 2003-07-17 2005-02-10 Yokogawa Electric Corp 面発光レーザ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292613B2 (en) * 2002-07-30 2007-11-06 The Board Of Trustees Of The Leland Stanford Junior University Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
US20040213312A1 (en) * 2003-04-25 2004-10-28 Tan Michael R. Semiconductor laser having improved high-frequency, large signal response at reduced operating current

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167484A (ja) * 1990-10-31 1992-06-15 Toshiba Corp 光半導体装置
JP2002204027A (ja) * 1992-10-15 2002-07-19 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2000174329A (ja) * 1998-12-03 2000-06-23 Oki Electric Ind Co Ltd 垂直微小共振器型発光ダイオード
JP2002353568A (ja) * 2001-05-28 2002-12-06 Hitachi Ltd 半導体レーザとそれを用いた光モジュール及び光通信システム
JP2005039102A (ja) * 2003-07-17 2005-02-10 Yokogawa Electric Corp 面発光レーザ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080571A (ja) * 2008-09-25 2010-04-08 Nec Corp 面発光レーザ及びその製造方法
US9466945B2 (en) 2014-10-03 2016-10-11 Fuji Xerox Co., Ltd. Surface-emitting semiconductor laser device and method for producing the same
JP2020021883A (ja) * 2018-08-02 2020-02-06 株式会社リコー 発光素子及びその製造方法
JP7155723B2 (ja) 2018-08-02 2022-10-19 株式会社リコー 発光素子及びその製造方法
JP2021036553A (ja) * 2019-08-30 2021-03-04 学校法人 名城大学 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
JP7369947B2 (ja) 2019-08-30 2023-10-27 学校法人 名城大学 窒化物半導体発光素子の製造方法

Also Published As

Publication number Publication date
JPWO2008078595A1 (ja) 2010-04-22
JP5212113B2 (ja) 2013-06-19

Similar Documents

Publication Publication Date Title
WO2007119761B1 (en) Vcsel with photonic crystal mirror for waveguiding by diffraction
WO2007071794A3 (en) Mirror structure and laser device comprising such a mirror structure
WO2009057309A1 (ja) ファイバレーザ光源
EP1610426A4 (en) OPTICAL SEMICONDUCTOR ELEMENT AND INTEGRATED OPTICAL SEMICONDUCTOR CIRCUIT
WO2011106553A3 (en) Planar, low loss transmitting or reflecting lenses using sub-wavelength high contrast grating
CA2373564A1 (en) Optical wiring substrate, method of manufacturing optical wiring substrate and multilayer optical wiring
US8311065B2 (en) Fiber laser system
CA2550677A1 (en) Tunable resonant grating filters
WO2004054049A3 (en) Nanocrystal waveguide (now) laser
CN106233175B (zh) 外部谐振器型发光装置
WO2008078595A1 (ja) 面発光レーザ
EP2259107A3 (en) Two-dimensional photonic crystal optical resonator and optical reflector using interference between point defects
US11307353B2 (en) End device of optical waveguide and optical filter
ATE200944T1 (de) Halbleiterlaser und herstellungsverfahren
ATE268511T1 (de) Lichtwellenleiter und herstellungsverfahren
JP6423914B1 (ja) クラッドモードストリッパ
AU2003245199A1 (en) Resonator
EP1870973A1 (en) Laser beam generation device and generation method
WO2015190569A1 (ja) 外部共振器型発光装置
JP2003283024A5 (ja)
JP2006128475A (ja) 半導体レーザ
WO2004045030A3 (en) Planar optical wave-guide with dielectric mirrors
JP7033988B2 (ja) 光源モジュール
JP2002324940A5 (ja)
JP2011035012A (ja) ファイバレーザ装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07850763

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008551040

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07850763

Country of ref document: EP

Kind code of ref document: A1